KR101141863B1 - 이온 소스, 시스템 및 방법 - Google Patents

이온 소스, 시스템 및 방법 Download PDF

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Publication number
KR101141863B1
KR101141863B1 KR1020107026971A KR20107026971A KR101141863B1 KR 101141863 B1 KR101141863 B1 KR 101141863B1 KR 1020107026971 A KR1020107026971 A KR 1020107026971A KR 20107026971 A KR20107026971 A KR 20107026971A KR 101141863 B1 KR101141863 B1 KR 101141863B1
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KR
South Korea
Prior art keywords
sample
ion beam
tip
information
ion
Prior art date
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Expired - Fee Related
Application number
KR1020107026971A
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English (en)
Korean (ko)
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KR20110003566A (ko
Inventor
빌리 더블유. 워드
존 에이. 4세 노트
루이스 에스. 3세 파카스
랜달 지. 퍼시발
레이몬드 힐
라스 마크워트
더크 아데르홀드
Original Assignee
앨리스 코포레이션
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Filing date
Publication date
Priority claimed from US11/385,215 external-priority patent/US7601953B2/en
Priority claimed from US11/385,136 external-priority patent/US20070228287A1/en
Application filed by 앨리스 코포레이션 filed Critical 앨리스 코포레이션
Publication of KR20110003566A publication Critical patent/KR20110003566A/ko
Application granted granted Critical
Publication of KR101141863B1 publication Critical patent/KR101141863B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H10P30/20—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/024—Moving components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20264—Piezoelectric devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2555—Microprobes, i.e. particle-induced X-ray spectrometry
    • H01J2237/2566—Microprobes, i.e. particle-induced X-ray spectrometry ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/262—Non-scanning techniques
    • H01J2237/2623—Field-emission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2812—Emission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31737—Direct-write microstructures using ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Tubes For Measurement (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
KR1020107026971A 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법 Expired - Fee Related KR101141863B1 (ko)

Applications Claiming Priority (19)

Application Number Priority Date Filing Date Title
US74195605P 2005-12-02 2005-12-02
US60/741,956 2005-12-02
US78439006P 2006-03-20 2006-03-20
US78438806P 2006-03-20 2006-03-20
US78450006P 2006-03-20 2006-03-20
US78433106P 2006-03-20 2006-03-20
US11/385,215 US7601953B2 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ion microscope
US11/385,136 US20070228287A1 (en) 2006-03-20 2006-03-20 Systems and methods for a gas field ionization source
US60/784,390 2006-03-20
US60/784,331 2006-03-20
US60/784,388 2006-03-20
US11/385,136 2006-03-20
US60/784,500 2006-03-20
US11/385,215 2006-03-20
US79580606P 2006-04-28 2006-04-28
US60/795,806 2006-04-28
US79920306P 2006-05-09 2006-05-09
US60/799,203 2006-05-09
PCT/US2006/044441 WO2007067317A2 (en) 2005-12-02 2006-11-15 Ion sources, systems and methods

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020087015965A Division KR101053348B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법

Publications (2)

Publication Number Publication Date
KR20110003566A KR20110003566A (ko) 2011-01-12
KR101141863B1 true KR101141863B1 (ko) 2012-05-08

Family

ID=37907217

Family Applications (12)

Application Number Title Priority Date Filing Date
KR1020107026971A Expired - Fee Related KR101141863B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020107027876A Active KR101226381B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087015923A Expired - Fee Related KR101053279B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087016082A Active KR101052997B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087016066A Expired - Fee Related KR101052952B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087016065A Expired - Fee Related KR101053403B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020107026969A Expired - Fee Related KR101254894B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020107027892A Active KR101139113B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087015920A Expired - Fee Related KR101053389B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087015965A Active KR101053348B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087016067A Expired - Fee Related KR101053299B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020107026970A Expired - Fee Related KR101196026B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법

Family Applications After (11)

Application Number Title Priority Date Filing Date
KR1020107027876A Active KR101226381B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087015923A Expired - Fee Related KR101053279B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087016082A Active KR101052997B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087016066A Expired - Fee Related KR101052952B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087016065A Expired - Fee Related KR101053403B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020107026969A Expired - Fee Related KR101254894B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020107027892A Active KR101139113B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087015920A Expired - Fee Related KR101053389B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087015965A Active KR101053348B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020087016067A Expired - Fee Related KR101053299B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법
KR1020107026970A Expired - Fee Related KR101196026B1 (ko) 2005-12-02 2006-11-15 이온 소스, 시스템 및 방법

Country Status (6)

Country Link
EP (13) EP1955350B1 (enExample)
JP (15) JP5193053B2 (enExample)
KR (12) KR101141863B1 (enExample)
CN (3) CN102324365B (enExample)
TW (11) TWI463514B (enExample)
WO (10) WO2007067296A2 (enExample)

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