JP6495025B2 - 真空統合ハードマスク処理および装置 - Google Patents
真空統合ハードマスク処理および装置 Download PDFInfo
- Publication number
- JP6495025B2 JP6495025B2 JP2015016254A JP2015016254A JP6495025B2 JP 6495025 B2 JP6495025 B2 JP 6495025B2 JP 2015016254 A JP2015016254 A JP 2015016254A JP 2015016254 A JP2015016254 A JP 2015016254A JP 6495025 B2 JP6495025 B2 JP 6495025B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- containing film
- module
- patterning
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 124
- 239000002184 metal Substances 0.000 claims description 123
- 238000000034 method Methods 0.000 claims description 81
- 238000000059 patterning Methods 0.000 claims description 68
- 238000000151 deposition Methods 0.000 claims description 61
- 230000008021 deposition Effects 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 50
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000012546 transfer Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000009833 condensation Methods 0.000 claims description 10
- 230000005494 condensation Effects 0.000 claims description 10
- 238000007872 degassing Methods 0.000 claims description 9
- 230000003321 amplification Effects 0.000 claims description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 8
- 238000011068 loading method Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 4
- 239000010931 gold Substances 0.000 claims 4
- 229910052737 gold Inorganic materials 0.000 claims 4
- 239000010408 film Substances 0.000 description 74
- 230000008569 process Effects 0.000 description 36
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000003795 chemical substances by application Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 238000011161 development Methods 0.000 description 9
- 230000010354 integration Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910001507 metal halide Inorganic materials 0.000 description 6
- 150000005309 metal halides Chemical class 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 150000002902 organometallic compounds Chemical class 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 239000002094 self assembled monolayer Substances 0.000 description 5
- 239000013545 self-assembled monolayer Substances 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000006303 photolysis reaction Methods 0.000 description 4
- 230000015843 photosynthesis, light reaction Effects 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1813—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by radiant energy
- C23C18/182—Radiation, e.g. UV, laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461934514P | 2014-01-31 | 2014-01-31 | |
| US61/934,514 | 2014-01-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015201622A JP2015201622A (ja) | 2015-11-12 |
| JP2015201622A5 JP2015201622A5 (enExample) | 2018-03-15 |
| JP6495025B2 true JP6495025B2 (ja) | 2019-04-03 |
Family
ID=53755444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015016254A Active JP6495025B2 (ja) | 2014-01-31 | 2015-01-30 | 真空統合ハードマスク処理および装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (8) | US9778561B2 (enExample) |
| JP (1) | JP6495025B2 (enExample) |
| KR (1) | KR102306612B1 (enExample) |
| CN (2) | CN105047541B (enExample) |
| TW (1) | TWI639179B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI847128B (zh) * | 2021-04-23 | 2024-07-01 | 美商恩特葛瑞斯股份有限公司 | 用於低曝光劑量euv輻射之高量子效率乾式抗蝕劑 |
Families Citing this family (355)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
| US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| JP6495025B2 (ja) | 2014-01-31 | 2019-04-03 | ラム リサーチ コーポレーションLam Research Corporation | 真空統合ハードマスク処理および装置 |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| KR102696070B1 (ko) | 2014-10-23 | 2024-08-16 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US10228618B2 (en) | 2015-10-13 | 2019-03-12 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US9996004B2 (en) | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US10224202B2 (en) * | 2016-03-31 | 2019-03-05 | Tokyo Electron Limited | Forming method of hard mask, forming apparatus of hard mask and recording medium |
| JP6762831B2 (ja) * | 2016-03-31 | 2020-09-30 | 東京エレクトロン株式会社 | ハードマスクの形成方法、ハードマスクの形成装置及び記憶媒体 |
| US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
| US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| US9859127B1 (en) * | 2016-06-10 | 2018-01-02 | Lam Research Corporation | Line edge roughness improvement with photon-assisted plasma process |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10622211B2 (en) * | 2016-08-05 | 2020-04-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-compound-removing solvent and method in lithography |
| US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US20180135183A1 (en) * | 2016-11-13 | 2018-05-17 | Applied Materials, Inc. | Surface Treatment For EUV Lithography |
| CN106444934B (zh) * | 2016-11-14 | 2019-02-19 | 北京北方华创微电子装备有限公司 | 一种基于状态管理的工艺控制系统调度装置及方法 |
| KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| KR102762543B1 (ko) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US10163633B2 (en) | 2017-03-13 | 2018-12-25 | Globalfoundries Inc. | Non-mandrel cut formation |
| US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US10199270B2 (en) * | 2017-05-25 | 2019-02-05 | Globalfoundries Inc. | Multi-directional self-aligned multiple patterning |
| US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| CN107365958B (zh) * | 2017-07-13 | 2020-01-07 | 上海天马有机发光显示技术有限公司 | 金属掩膜板的制备方法 |
| KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| TWI815813B (zh) | 2017-08-04 | 2023-09-21 | 荷蘭商Asm智慧財產控股公司 | 用於分配反應腔內氣體的噴頭總成 |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| JP7214724B2 (ja) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | バッチ炉で利用されるウェハカセットを収納するための収納装置 |
| KR102633318B1 (ko) | 2017-11-27 | 2024-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 청정 소형 구역을 포함한 장치 |
| KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| EP3503164A1 (en) * | 2017-12-21 | 2019-06-26 | IMEC vzw | Selective deposition of metal-organic frameworks |
| US10109517B1 (en) | 2018-01-10 | 2018-10-23 | Lam Research Corporation | Rotational indexer with additional rotational axes |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| CN116732497B (zh) | 2018-02-14 | 2025-06-17 | Asmip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| KR102600229B1 (ko) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
| TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| TWI871083B (zh) | 2018-06-27 | 2025-01-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
| CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
| KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| TWI884927B (zh) | 2018-10-17 | 2025-06-01 | 美商英培雅股份有限公司 | 圖案化有機金屬光阻及圖案化的方法 |
| KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (ko) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
| CN113227909B (zh) * | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| KR102727227B1 (ko) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
| TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
| TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
| TWI873122B (zh) | 2019-02-20 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
| KR102762833B1 (ko) | 2019-03-08 | 2025-02-04 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
| KR102782593B1 (ko) | 2019-03-08 | 2025-03-14 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
| KR102858005B1 (ko) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
| KR102809999B1 (ko) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| TWI895761B (zh) | 2019-04-12 | 2025-09-01 | 美商英培雅股份有限公司 | 對經顯影圖案層進行處理的方法 |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR20210149893A (ko) | 2019-04-30 | 2021-12-09 | 램 리써치 코포레이션 | 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스 |
| KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR102869364B1 (ko) | 2019-05-07 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
| KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP7598201B2 (ja) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP7612342B2 (ja) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
| KR20200141931A (ko) | 2019-06-10 | 2020-12-21 | 에이에스엠 아이피 홀딩 비.브이. | 석영 에피택셜 챔버를 세정하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| TWI837391B (zh) * | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| CN112242318A (zh) | 2019-07-16 | 2021-01-19 | Asm Ip私人控股有限公司 | 基板处理装置 |
| KR102860110B1 (ko) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| CN112242295B (zh) | 2019-07-19 | 2025-12-09 | Asmip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
| TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
| TWI851767B (zh) | 2019-07-29 | 2024-08-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
| CN112309900B (zh) | 2019-07-30 | 2025-11-04 | Asmip私人控股有限公司 | 基板处理设备 |
| KR20210015655A (ko) | 2019-07-30 | 2021-02-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 방법 |
| CN112309899B (zh) | 2019-07-30 | 2025-11-14 | Asmip私人控股有限公司 | 基板处理设备 |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN118422165A (zh) | 2019-08-05 | 2024-08-02 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
| CN112342526A (zh) | 2019-08-09 | 2021-02-09 | Asm Ip私人控股有限公司 | 包括冷却装置的加热器组件及其使用方法 |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR102806450B1 (ko) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR102733104B1 (ko) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US12469693B2 (en) | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置 |
| KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TW202128273A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法 |
| KR102879443B1 (ko) | 2019-10-10 | 2025-11-03 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (ko) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR102890638B1 (ko) | 2019-11-05 | 2025-11-25 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (ko) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| CN112951697B (zh) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | 基板处理设备 |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN120998766A (zh) | 2019-11-29 | 2025-11-21 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885693B (zh) | 2019-11-29 | 2025-06-10 | Asmip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| KR20210089077A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 가스 공급 어셈블리, 이의 구성 요소, 및 이를 포함하는 반응기 시스템 |
| KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| WO2021146138A1 (en) | 2020-01-15 | 2021-07-22 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| KR102882467B1 (ko) | 2020-01-16 | 2025-11-05 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| TWI889744B (zh) | 2020-01-29 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 污染物捕集系統、及擋板堆疊 |
| US20230047486A1 (en) * | 2020-01-31 | 2023-02-16 | Lam Research Corporation | Alloy film etch |
| TW202513845A (zh) | 2020-02-03 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置結構及其形成方法 |
| TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
| CN115398347A (zh) * | 2020-02-04 | 2022-11-25 | 朗姆研究公司 | 提高含金属euv抗蚀剂干式显影性能的涂敷/暴露后处理 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR20210103956A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
| TW202146691A (zh) | 2020-02-13 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法 |
| TWI855223B (zh) | 2020-02-17 | 2024-09-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法 |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| TWI895326B (zh) | 2020-02-28 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 專用於零件清潔的系統 |
| KR20220147617A (ko) | 2020-03-02 | 2022-11-03 | 인프리아 코포레이션 | 무기 레지스트 패터닝을 위한 공정 환경 |
| TW202139347A (zh) | 2020-03-04 | 2021-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 反應器系統、對準夾具、及對準方法 |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| WO2021202198A1 (en) * | 2020-03-31 | 2021-10-07 | Lam Research Corporation | Apparatus and process for euv dry resist sensitization by gas phase infusion of a sensitizer |
| KR102755229B1 (ko) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TWI887376B (zh) | 2020-04-03 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置的製造方法 |
| KR20220164031A (ko) | 2020-04-03 | 2022-12-12 | 램 리써치 코포레이션 | Euv 리소그래피 성능을 향상시키기 위한 사전 노출 포토레지스트 경화 |
| TWI888525B (zh) | 2020-04-08 | 2025-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| TW202143328A (zh) | 2020-04-21 | 2021-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於調整膜應力之方法 |
| KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
| KR102866804B1 (ko) | 2020-04-24 | 2025-09-30 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
| KR20210132612A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 화합물들을 안정화하기 위한 방법들 및 장치 |
| US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
| TW202208671A (zh) | 2020-04-24 | 2022-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括硼化釩及磷化釩層的結構之方法 |
| KR102783898B1 (ko) | 2020-04-29 | 2025-03-18 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
| KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
| JP7726664B2 (ja) | 2020-05-04 | 2025-08-20 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
| JP7736446B2 (ja) | 2020-05-07 | 2025-09-09 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同調回路を備える反応器システム |
| KR102816111B1 (ko) * | 2020-05-07 | 2025-06-05 | 삼성전자주식회사 | 반도체 소자 |
| US11776811B2 (en) | 2020-05-12 | 2023-10-03 | Applied Materials, Inc. | Selective deposition of carbon on photoresist layer for lithography applications |
| KR102788543B1 (ko) | 2020-05-13 | 2025-03-27 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
| TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
| TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
| KR102795476B1 (ko) | 2020-05-21 | 2025-04-11 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
| KR20210145079A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 플랜지 및 장치 |
| TWI873343B (zh) | 2020-05-22 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
| KR20210146802A (ko) | 2020-05-26 | 2021-12-06 | 에이에스엠 아이피 홀딩 비.브이. | 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법 |
| TWI876048B (zh) | 2020-05-29 | 2025-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| TW202212620A (zh) | 2020-06-02 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法 |
| TW202208659A (zh) | 2020-06-16 | 2022-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積含硼之矽鍺層的方法 |
| TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
| TWI873359B (zh) | 2020-06-30 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| TWI896694B (zh) | 2020-07-01 | 2025-09-11 | 荷蘭商Asm Ip私人控股有限公司 | 沉積方法、半導體結構、及沉積系統 |
| US12416863B2 (en) | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US12283484B2 (en) * | 2020-07-02 | 2025-04-22 | Applied Materials, Inc. | Selective deposition of carbon on photoresist layer for lithography applications |
| WO2022010809A1 (en) | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| JP2023535894A (ja) * | 2020-07-17 | 2023-08-22 | ラム リサーチ コーポレーション | Sn(ii)前駆体からのフォトレジスト |
| TWI864307B (zh) | 2020-07-17 | 2024-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於光微影之結構、方法與系統 |
| JP7774611B2 (ja) * | 2020-07-17 | 2025-11-21 | ラム リサーチ コーポレーション | 被膜を形成するための方法 |
| KR20220011092A (ko) | 2020-07-20 | 2022-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템 |
| TWI878570B (zh) | 2020-07-20 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
| US11886120B2 (en) | 2020-07-21 | 2024-01-30 | Applied Materials, Inc. | Deposition of semiconductor integration films |
| US11562904B2 (en) | 2020-07-21 | 2023-01-24 | Applied Materials, Inc. | Deposition of semiconductor integration films |
| US12322591B2 (en) | 2020-07-27 | 2025-06-03 | Asm Ip Holding B.V. | Thin film deposition process |
| KR20220021863A (ko) | 2020-08-14 | 2022-02-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
| TW202228863A (zh) | 2020-08-25 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 清潔基板的方法、選擇性沉積的方法、及反應器系統 |
| TW202534193A (zh) | 2020-08-26 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法 |
| TW202229601A (zh) | 2020-08-27 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統 |
| KR20220033997A (ko) | 2020-09-10 | 2022-03-17 | 에이에스엠 아이피 홀딩 비.브이. | 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치 |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| KR20220036866A (ko) | 2020-09-16 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물 증착 방법 |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| TWI889903B (zh) | 2020-09-25 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| KR20220045900A (ko) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치 |
| CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
| TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
| KR102873665B1 (ko) | 2020-10-15 | 2025-10-17 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치 |
| TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
| TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
| TW202229620A (zh) | 2020-11-12 | 2022-08-01 | 特文特大學 | 沉積系統、用於控制反應條件之方法、沉積方法 |
| KR102797476B1 (ko) * | 2020-11-13 | 2025-04-21 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| TW202229795A (zh) | 2020-11-23 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 具注入器之基板處理設備 |
| TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
| TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
| KR20250142946A (ko) * | 2020-12-08 | 2025-09-30 | 램 리써치 코포레이션 | 유기 증기를 사용한 포토레지스트 현상 |
| US12255053B2 (en) | 2020-12-10 | 2025-03-18 | Asm Ip Holding B.V. | Methods and systems for depositing a layer |
| TW202233884A (zh) | 2020-12-14 | 2022-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成臨限電壓控制用之結構的方法 |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| TW202232639A (zh) | 2020-12-18 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 具有可旋轉台的晶圓處理設備 |
| TW202242184A (zh) | 2020-12-22 | 2022-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法 |
| TW202226899A (zh) | 2020-12-22 | 2022-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 具匹配器的電漿處理裝置 |
| TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
| KR20230165224A (ko) * | 2021-04-01 | 2023-12-05 | 제이에스알 가부시끼가이샤 | 반도체 기판의 제조 방법 및 레지스트 하층막 형성용 조성물 |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
| KR20240012409A (ko) | 2021-05-25 | 2024-01-29 | 도쿄엘렉트론가부시키가이샤 | 극자외선 패터닝을 위한 유기금속 막 |
| JP7614042B2 (ja) * | 2021-07-13 | 2025-01-15 | 東京エレクトロン株式会社 | パターン形成方法および感光性ハードマスク |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| US12372871B2 (en) | 2021-11-09 | 2025-07-29 | Tokyo Electron Limited | EUV active films for EUV lithography |
| US12494368B2 (en) * | 2021-11-12 | 2025-12-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist and method |
| USD1099184S1 (en) | 2021-11-29 | 2025-10-21 | Asm Ip Holding B.V. | Weighted lift pin |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
| US20230350303A1 (en) * | 2022-04-27 | 2023-11-02 | Tokyo Electron Limited | Dry Developing Metal-Free Photoresists |
| KR20250040045A (ko) | 2022-08-12 | 2025-03-21 | 젤리스트 인코퍼레이티드 | 불포화 치환기를 함유하는 고순도 주석 화합물 및 이의 제조 방법 |
| JPWO2024070535A1 (enExample) * | 2022-09-28 | 2024-04-04 | ||
| EP4598932A1 (en) | 2022-10-04 | 2025-08-13 | Gelest, Inc. | Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof |
| JP7769144B2 (ja) | 2023-03-17 | 2025-11-12 | ラム リサーチ コーポレーション | Euvパターニングのための乾式現像およびエッチングプロセスの単一プロセスチャンバへの統合 |
| US20250118555A1 (en) * | 2023-10-10 | 2025-04-10 | Tokyo Electron Limited | Selective passivation of photoresists |
Family Cites Families (156)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3576755A (en) * | 1964-09-24 | 1971-04-27 | American Cyanamid Co | Photochromism in plastic film containing inorganic materials |
| US3442648A (en) * | 1965-06-16 | 1969-05-06 | American Cyanamid Co | Photographic dodging method |
| US3513010A (en) * | 1966-07-11 | 1970-05-19 | Kalvar Corp | Conversion foil |
| US3529963A (en) * | 1966-08-23 | 1970-09-22 | Du Pont | Image-yielding elements and processes |
| US3720515A (en) * | 1971-10-20 | 1973-03-13 | Trw Inc | Microelectronic circuit production |
| US4241165A (en) * | 1978-09-05 | 1980-12-23 | Motorola, Inc. | Plasma development process for photoresist |
| US4328298A (en) * | 1979-06-27 | 1982-05-04 | The Perkin-Elmer Corporation | Process for manufacturing lithography masks |
| JPS60115222A (ja) * | 1983-11-28 | 1985-06-21 | Tokyo Ohka Kogyo Co Ltd | 微細パタ−ン形成方法 |
| JPH0778629B2 (ja) | 1986-12-19 | 1995-08-23 | ミノルタ株式会社 | ポジ型レジスト膜及びそのレジストパターンの形成方法 |
| US5077085A (en) * | 1987-03-06 | 1991-12-31 | Schnur Joel M | High resolution metal patterning of ultra-thin films on solid substrates |
| US4834834A (en) * | 1987-11-20 | 1989-05-30 | Massachusetts Institute Of Technology | Laser photochemical etching using surface halogenation |
| US4845053A (en) * | 1988-01-25 | 1989-07-04 | John Zajac | Flame ashing process for stripping photoresist |
| US4940854A (en) * | 1988-07-13 | 1990-07-10 | Minnesota Mining And Manufacturing Company | Organic thin film controlled molecular epitaxy |
| US5322765A (en) | 1991-11-22 | 1994-06-21 | International Business Machines Corporation | Dry developable photoresist compositions and method for use thereof |
| GEP20002074B (en) * | 1992-05-19 | 2000-05-10 | Westaim Tech Inc Ca | Modified Material and Method for its Production |
| EP0635884A1 (de) | 1993-07-13 | 1995-01-25 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines Grabens in einem Substrat und dessen Verwendung in der Smart-Power-Technologie |
| TW276353B (enExample) * | 1993-07-15 | 1996-05-21 | Hitachi Seisakusyo Kk | |
| JPH07106224A (ja) | 1993-10-01 | 1995-04-21 | Hitachi Ltd | パターン形成方法 |
| US5534312A (en) * | 1994-11-14 | 1996-07-09 | Simon Fraser University | Method for directly depositing metal containing patterned films |
| US6007963A (en) | 1995-09-21 | 1999-12-28 | Sandia Corporation | Method for extreme ultraviolet lithography |
| US6261938B1 (en) * | 1997-02-12 | 2001-07-17 | Quantiscript, Inc. | Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography |
| WO1999004911A1 (en) * | 1997-07-28 | 1999-02-04 | Massachusetts Institute Of Technology | Pyrolytic chemical vapor deposition of silicone films |
| US6290779B1 (en) | 1998-06-12 | 2001-09-18 | Tokyo Electron Limited | Systems and methods for dry cleaning process chambers |
| US6348239B1 (en) * | 2000-04-28 | 2002-02-19 | Simon Fraser University | Method for depositing metal and metal oxide films and patterned films |
| WO2001059825A1 (en) | 2000-02-08 | 2001-08-16 | Matrix Integrated Systems, Inc. | Method for removing photoresist and residues from semiconductor device surfaces |
| US20040191423A1 (en) * | 2000-04-28 | 2004-09-30 | Ruan Hai Xiong | Methods for the deposition of silver and silver oxide films and patterned films |
| US20060001064A1 (en) | 2000-04-28 | 2006-01-05 | Hill Ross H | Methods for the lithographic deposition of ferroelectric materials |
| KR100406174B1 (ko) | 2000-06-15 | 2003-11-19 | 주식회사 하이닉스반도체 | 화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드 |
| JP2002015971A (ja) * | 2000-06-27 | 2002-01-18 | Matsushita Electric Ind Co Ltd | パターン形成方法及び半導体装置の製造装置 |
| KR100398312B1 (ko) | 2000-06-30 | 2003-09-19 | 한국과학기술원 | 유기금속을 함유하고 있는 노르보넨 단량체, 이들의고분자 중합체를 함유하는 포토레지스트, 및 그제조방법과, 포토레지스트 패턴 형성방법 |
| US6797439B1 (en) * | 2001-03-30 | 2004-09-28 | Schott Lithotec Ag | Photomask with back-side anti-reflective layer and method of manufacture |
| US6686132B2 (en) | 2001-04-20 | 2004-02-03 | The Regents Of The University Of California | Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake |
| US6933673B2 (en) * | 2001-04-27 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device and process of manufacturing the same |
| US6926957B2 (en) | 2001-06-29 | 2005-08-09 | 3M Innovative Properties Company | Water-based ink-receptive coating |
| JP2003213001A (ja) | 2001-11-13 | 2003-07-30 | Sekisui Chem Co Ltd | 光反応性組成物 |
| US6843858B2 (en) | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
| KR100815671B1 (ko) | 2002-04-11 | 2008-03-20 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 이들의 제조방법 |
| JP3806702B2 (ja) * | 2002-04-11 | 2006-08-09 | Hoya株式会社 | 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法 |
| DE10219173A1 (de) * | 2002-04-30 | 2003-11-20 | Philips Intellectual Property | Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung |
| JP2006504136A (ja) * | 2002-10-21 | 2006-02-02 | ナノインク インコーポレーティッド | ナノメートル・スケール設計構造、その製造方法および装置、マスク修復、強化、および製造への適用 |
| JP4153783B2 (ja) * | 2002-12-09 | 2008-09-24 | 株式会社東芝 | X線平面検出器 |
| JP2006522480A (ja) | 2003-03-31 | 2006-09-28 | 東京エレクトロン株式会社 | 多層フォトレジストのドライ現像のための方法及び装置 |
| JP4313749B2 (ja) * | 2003-10-10 | 2009-08-12 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板を支持部材上に配置する方法、及び基板ハンドラ |
| GB0323805D0 (en) * | 2003-10-10 | 2003-11-12 | Univ Southampton | Synthesis of germanium sulphide and related compounds |
| US7126128B2 (en) * | 2004-02-13 | 2006-10-24 | Kabushiki Kaisha Toshiba | Flat panel x-ray detector |
| US20060068173A1 (en) | 2004-09-30 | 2006-03-30 | Ebara Corporation | Methods for forming and patterning of metallic films |
| JP2006253282A (ja) * | 2005-03-09 | 2006-09-21 | Ebara Corp | 金属膜のパターン形成方法 |
| US7885387B2 (en) * | 2004-12-17 | 2011-02-08 | Osaka University | Extreme ultraviolet light and X-ray source target and manufacturing method thereof |
| KR100601979B1 (ko) | 2004-12-30 | 2006-07-18 | 삼성전자주식회사 | 반도체 웨이퍼의 베이킹 장치 |
| KR100607201B1 (ko) * | 2005-01-04 | 2006-08-01 | 삼성전자주식회사 | 극자외선 리소그래피 공정에서 웨이퍼 상의 임계 치수편차를 보정하는 방법 |
| US7365026B2 (en) | 2005-02-01 | 2008-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | CxHy sacrificial layer for cu/low-k interconnects |
| US7868304B2 (en) * | 2005-02-07 | 2011-01-11 | Asml Netherlands B.V. | Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7482280B2 (en) | 2005-08-15 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a lithography pattern |
| US7909960B2 (en) | 2005-09-27 | 2011-03-22 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
| US8664124B2 (en) | 2005-10-31 | 2014-03-04 | Novellus Systems, Inc. | Method for etching organic hardmasks |
| US20070117040A1 (en) | 2005-11-21 | 2007-05-24 | International Business Machines Corporation | Water castable-water strippable top coats for 193 nm immersion lithography |
| KR100891779B1 (ko) | 2005-11-28 | 2009-04-07 | 허니웰 인터내셔날 인코포레이티드 | 증착 공정용의 유기금속 전구체 및 관련된 중간체, 이들의제조 방법, 및 이들의 사용 방법 |
| JP2007207530A (ja) * | 2006-01-31 | 2007-08-16 | Toshiba Corp | 異方性導電膜及びこれを用いたx線平面検出器、赤外線平面検出器及び表示装置 |
| US7662718B2 (en) | 2006-03-09 | 2010-02-16 | Micron Technology, Inc. | Trim process for critical dimension control for integrated circuits |
| US8664513B2 (en) * | 2007-10-12 | 2014-03-04 | OmniPV, Inc. | Solar modules with enhanced efficiencies via use of spectral concentrators |
| US7976631B2 (en) | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
| KR100921932B1 (ko) | 2007-10-25 | 2009-10-15 | 포항공과대학교 산학협력단 | 다원자분자를 이용한 패터닝방법 |
| US8153348B2 (en) * | 2008-02-20 | 2012-04-10 | Applied Materials, Inc. | Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch |
| US7985513B2 (en) * | 2008-03-18 | 2011-07-26 | Advanced Micro Devices, Inc. | Fluorine-passivated reticles for use in lithography and methods for fabricating the same |
| US20090286402A1 (en) | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
| JP2009294439A (ja) * | 2008-06-05 | 2009-12-17 | Toshiba Corp | レジストパターン形成方法 |
| JP5171422B2 (ja) | 2008-06-19 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 感光性組成物、これを用いたパターン形成方法、半導体素子の製造方法 |
| US20090321707A1 (en) | 2008-06-25 | 2009-12-31 | Matthew Metz | Intersubstrate-dielectric nanolaminate layer for improved temperature stability of gate dielectric films |
| US20090325387A1 (en) | 2008-06-26 | 2009-12-31 | Applied Materials, Inc. | Methods and apparatus for in-situ chamber dry clean during photomask plasma etching |
| KR20110050427A (ko) | 2008-07-14 | 2011-05-13 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 euv 리소그래피용 반사형 마스크 |
| KR20110046439A (ko) | 2008-07-24 | 2011-05-04 | 코비오 인코포레이티드 | 알루미늄 잉크 및 이의 제조 방법, 알루미늄 잉크 증착 방법 및 알루미늄 잉크의 인쇄 및/또는 증착에 의해 형성된 필름 |
| US7977235B2 (en) * | 2009-02-02 | 2011-07-12 | Tokyo Electron Limited | Method for manufacturing a semiconductor device with metal-containing cap layers |
| JP5193121B2 (ja) * | 2009-04-17 | 2013-05-08 | 東京エレクトロン株式会社 | レジスト塗布現像方法 |
| US8114306B2 (en) | 2009-05-22 | 2012-02-14 | International Business Machines Corporation | Method of forming sub-lithographic features using directed self-assembly of polymers |
| US20100304027A1 (en) * | 2009-05-27 | 2010-12-02 | Applied Materials, Inc. | Substrate processing system and methods thereof |
| JP5702796B2 (ja) * | 2009-11-17 | 2015-04-15 | エリコン アドバンスド テクノロジーズ アーゲー | 基板処理装置及びその方法 |
| KR101810702B1 (ko) | 2009-12-28 | 2017-12-19 | 아사히 가라스 가부시키가이샤 | 감광성 조성물, 격벽, 컬러 필터 및 유기 el 소자 |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| US8138097B1 (en) | 2010-09-20 | 2012-03-20 | Kabushiki Kaisha Toshiba | Method for processing semiconductor structure and device based on the same |
| TW201224190A (en) | 2010-10-06 | 2012-06-16 | Applied Materials Inc | Atomic layer deposition of photoresist materials and hard mask precursors |
| US8470711B2 (en) | 2010-11-23 | 2013-06-25 | International Business Machines Corporation | Tone inversion with partial underlayer etch for semiconductor device formation |
| US8836082B2 (en) | 2011-01-31 | 2014-09-16 | Brewer Science Inc. | Reversal lithography approach by selective deposition of nanoparticles |
| US8778816B2 (en) * | 2011-02-04 | 2014-07-15 | Applied Materials, Inc. | In situ vapor phase surface activation of SiO2 |
| JP5708522B2 (ja) | 2011-02-15 | 2015-04-30 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
| WO2012118847A2 (en) * | 2011-02-28 | 2012-09-07 | Inpria Corportion | Solution processible hardmarks for high resolusion lithography |
| FR2975823B1 (fr) | 2011-05-27 | 2014-11-21 | Commissariat Energie Atomique | Procede de realisation d'un motif a la surface d'un bloc d'un substrat utilisant des copolymeres a bloc |
| US8709706B2 (en) | 2011-06-15 | 2014-04-29 | Applied Materials, Inc. | Methods and apparatus for performing multiple photoresist layer development and etching processes |
| CN108594599B (zh) | 2011-07-08 | 2022-04-22 | Asml荷兰有限公司 | 抗蚀剂材料、光刻图案化方法和氧化物的用途 |
| CN102610516B (zh) | 2011-07-22 | 2015-01-21 | 上海华力微电子有限公司 | 一种提高光刻胶与金属/金属化合物表面之间粘附力的方法 |
| EP2783389B1 (en) | 2011-11-21 | 2021-03-10 | Brewer Science, Inc. | Structure comprising assist layers for euv lithography and method for forming it |
| US8809994B2 (en) | 2011-12-09 | 2014-08-19 | International Business Machines Corporation | Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate |
| US20130177847A1 (en) | 2011-12-12 | 2013-07-11 | Applied Materials, Inc. | Photoresist for improved lithographic control |
| US8691476B2 (en) | 2011-12-16 | 2014-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV mask and method for forming the same |
| SG193093A1 (en) * | 2012-02-13 | 2013-09-30 | Novellus Systems Inc | Method for etching organic hardmasks |
| US8703386B2 (en) | 2012-02-27 | 2014-04-22 | International Business Machines Corporation | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
| CN104284776B (zh) * | 2012-05-14 | 2016-01-06 | 柯尼卡美能达株式会社 | 气体阻隔性膜、气体阻隔性膜的制造方法及电子设备 |
| SG195494A1 (en) | 2012-05-18 | 2013-12-30 | Novellus Systems Inc | Carbon deposition-etch-ash gap fill process |
| SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
| US8969997B2 (en) | 2012-11-14 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Isolation structures and methods of forming the same |
| US8927989B2 (en) | 2012-11-28 | 2015-01-06 | International Business Machines Corporation | Voltage contrast inspection of deep trench isolation |
| US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
| US9337068B2 (en) | 2012-12-18 | 2016-05-10 | Lam Research Corporation | Oxygen-containing ceramic hard masks and associated wet-cleans |
| JP5913077B2 (ja) * | 2012-12-18 | 2016-04-27 | 信越化学工業株式会社 | ポジ型レジスト材料及びこれを用いたパターン形成方法 |
| JP6134522B2 (ja) | 2013-01-30 | 2017-05-24 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
| US9304396B2 (en) | 2013-02-25 | 2016-04-05 | Lam Research Corporation | PECVD films for EUV lithography |
| US9607904B2 (en) * | 2013-03-11 | 2017-03-28 | Intermolecular, Inc. | Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices |
| US9223220B2 (en) | 2013-03-12 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photo resist baking in lithography process |
| US9632411B2 (en) | 2013-03-14 | 2017-04-25 | Applied Materials, Inc. | Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor |
| US10074544B2 (en) | 2013-04-23 | 2018-09-11 | Massachusetts Institute Of Technology | Developer free positive tone lithography by thermal direct write |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| US9372402B2 (en) * | 2013-09-13 | 2016-06-21 | The Research Foundation For The State University Of New York | Molecular organometallic resists for EUV |
| US9405204B2 (en) | 2013-09-18 | 2016-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of overlay in extreme ultra-violet (EUV) lithography |
| JP5917477B2 (ja) | 2013-11-29 | 2016-05-18 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| JP6495025B2 (ja) | 2014-01-31 | 2019-04-03 | ラム リサーチ コーポレーションLam Research Corporation | 真空統合ハードマスク処理および装置 |
| US10685846B2 (en) | 2014-05-16 | 2020-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor integrated circuit fabrication with pattern-reversing process |
| JP2017521715A (ja) | 2014-07-08 | 2017-08-03 | 東京エレクトロン株式会社 | ネガティブトーン現像剤相溶性フォトレジスト組成物及び使用方法 |
| GB201412201D0 (en) * | 2014-07-09 | 2014-08-20 | Isis Innovation | Two-step deposition process |
| KR102696070B1 (ko) | 2014-10-23 | 2024-08-16 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| US9609730B2 (en) | 2014-11-12 | 2017-03-28 | Lam Research Corporation | Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas |
| US9551924B2 (en) * | 2015-02-12 | 2017-01-24 | International Business Machines Corporation | Structure and method for fixing phase effects on EUV mask |
| KR102517882B1 (ko) | 2015-03-09 | 2023-04-03 | 버슘머트리얼즈 유에스, 엘엘씨 | 저항성 랜덤 액세스 메모리로서 사용하기 위한 다공성 유기실리케이트 유리 막을 증착시키는 방법 |
| JP6404757B2 (ja) | 2015-03-27 | 2018-10-17 | 信越化学工業株式会社 | レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法 |
| US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
| US9829790B2 (en) | 2015-06-08 | 2017-11-28 | Applied Materials, Inc. | Immersion field guided exposure and post-exposure bake process |
| US9659771B2 (en) | 2015-06-11 | 2017-05-23 | Applied Materials, Inc. | Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning |
| US9922839B2 (en) | 2015-06-23 | 2018-03-20 | Lam Research Corporation | Low roughness EUV lithography |
| WO2017002342A1 (ja) | 2015-07-01 | 2017-01-05 | パナソニックIpマネジメント株式会社 | エアロゲルおよびそれを用いた部材とその製造方法 |
| US10228618B2 (en) | 2015-10-13 | 2019-03-12 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| US9996004B2 (en) | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| JP6603115B2 (ja) | 2015-11-27 | 2019-11-06 | 信越化学工業株式会社 | ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法 |
| US10503070B2 (en) | 2015-12-10 | 2019-12-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive material and method of lithography |
| US9633838B2 (en) | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
| US10018920B2 (en) | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
| KR102394042B1 (ko) | 2016-03-11 | 2022-05-03 | 인프리아 코포레이션 | 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 |
| WO2017198418A1 (en) | 2016-05-19 | 2017-11-23 | Asml Netherlands B.V. | Resist compositions |
| US9824893B1 (en) | 2016-06-28 | 2017-11-21 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
| WO2018004551A1 (en) | 2016-06-28 | 2018-01-04 | Intel Corporation | Polysilane-, polygermane-, and polystannane-based materials for euv and ebeam lithography |
| JP7065076B2 (ja) | 2016-08-12 | 2022-05-11 | インプリア・コーポレイション | 金属含有レジストからのエッジビード領域における金属残留物を低減する方法 |
| US10755942B2 (en) | 2016-11-02 | 2020-08-25 | Massachusetts Institute Of Technology | Method of forming topcoat for patterning |
| US9929012B1 (en) | 2016-12-14 | 2018-03-27 | International Business Machines Corporation | Resist having tuned interface hardmask layer for EUV exposure |
| KR102047538B1 (ko) | 2017-02-03 | 2019-11-21 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
| US10176984B2 (en) | 2017-02-14 | 2019-01-08 | Lam Research Corporation | Selective deposition of silicon oxide |
| US20180308687A1 (en) | 2017-04-24 | 2018-10-25 | Lam Research Corporation | Euv photopatterning and selective deposition for negative pattern mask |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| WO2019099981A2 (en) | 2017-11-20 | 2019-05-23 | Inpria Corporation | Organotin clusters, solutions of organotin clusters, and application to high resolution patterning |
| TW202523764A (zh) | 2018-04-05 | 2025-06-16 | 美商英培雅股份有限公司 | 包含錫化合物的輻射可圖案化塗層及其應用 |
| US10787466B2 (en) | 2018-04-11 | 2020-09-29 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
| US11673903B2 (en) | 2018-04-11 | 2023-06-13 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
| KR20250060326A (ko) | 2018-05-11 | 2025-05-07 | 램 리써치 코포레이션 | Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들 |
| KR20240129107A (ko) | 2018-06-21 | 2024-08-27 | 인프리아 코포레이션 | 모노알킬 주석 알콕사이드 및 이들의 가수분해 및 축합 생성물의 안정적인 용액 |
| TWI884927B (zh) * | 2018-10-17 | 2025-06-01 | 美商英培雅股份有限公司 | 圖案化有機金屬光阻及圖案化的方法 |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| US11966158B2 (en) | 2019-01-30 | 2024-04-23 | Inpria Corporation | Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods |
| US11498934B2 (en) | 2019-01-30 | 2022-11-15 | Inpria Corporation | Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods |
| US20220308462A1 (en) | 2019-06-27 | 2022-09-29 | Lam Research Corporation | Apparatus for photoresist dry deposition |
-
2015
- 2015-01-30 JP JP2015016254A patent/JP6495025B2/ja active Active
- 2015-01-30 US US14/610,038 patent/US9778561B2/en active Active
- 2015-01-30 KR KR1020150015184A patent/KR102306612B1/ko active Active
- 2015-01-30 TW TW104103153A patent/TWI639179B/zh active
- 2015-02-02 CN CN201510053668.7A patent/CN105047541B/zh active Active
- 2015-02-02 CN CN201810783756.6A patent/CN109216170A/zh active Pending
-
2017
- 2017-08-30 US US15/691,659 patent/US10514598B2/en active Active
-
2018
- 2018-11-30 US US16/206,959 patent/US10831096B2/en active Active
-
2019
- 2019-11-21 US US16/691,508 patent/US11209729B2/en active Active
-
2021
- 2021-11-16 US US17/455,185 patent/US20220075260A1/en not_active Abandoned
-
2023
- 2023-04-10 US US18/298,003 patent/US20230266662A1/en not_active Abandoned
- 2023-04-10 US US18/297,989 patent/US20230273516A1/en not_active Abandoned
-
2024
- 2024-10-30 US US18/932,475 patent/US20250053080A1/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI847128B (zh) * | 2021-04-23 | 2024-07-01 | 美商恩特葛瑞斯股份有限公司 | 用於低曝光劑量euv輻射之高量子效率乾式抗蝕劑 |
| US12449728B2 (en) | 2021-04-23 | 2025-10-21 | Entegris, Inc. | High quantum efficiency dry resist for low exposure dose of EUV radiation |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220075260A1 (en) | 2022-03-10 |
| US20250053080A1 (en) | 2025-02-13 |
| US11209729B2 (en) | 2021-12-28 |
| CN105047541B (zh) | 2018-08-14 |
| TWI639179B (zh) | 2018-10-21 |
| CN105047541A (zh) | 2015-11-11 |
| CN109216170A (zh) | 2019-01-15 |
| US20190094685A1 (en) | 2019-03-28 |
| US10514598B2 (en) | 2019-12-24 |
| US9778561B2 (en) | 2017-10-03 |
| US20230273516A1 (en) | 2023-08-31 |
| US20200089104A1 (en) | 2020-03-19 |
| US20230266662A1 (en) | 2023-08-24 |
| TW201539538A (zh) | 2015-10-16 |
| JP2015201622A (ja) | 2015-11-12 |
| US10831096B2 (en) | 2020-11-10 |
| US20150221519A1 (en) | 2015-08-06 |
| US20180004083A1 (en) | 2018-01-04 |
| KR102306612B1 (ko) | 2021-09-29 |
| KR20150091260A (ko) | 2015-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20230273516A1 (en) | Vacuum-integrated hardmask processes and apparatus | |
| JP7282830B2 (ja) | 蒸着金属酸化物含有ハードマスクのeuvフォトパターニング | |
| JP7618601B2 (ja) | 複数のパターニング放射吸収元素および/または垂直組成勾配を備えたフォトレジスト | |
| CN114026501B (zh) | 利用卤化物化学品的光致抗蚀剂显影 | |
| JP7502545B2 (ja) | 照射フォトレジストパターニングのための統合乾式プロセス | |
| US20220404713A1 (en) | Dry Resist System and Method of Using | |
| TWI790594B (zh) | 半導體裝置的製造方法及防止含金屬光阻釋氣的方法 | |
| JP7769144B2 (ja) | Euvパターニングのための乾式現像およびエッチングプロセスの単一プロセスチャンバへの統合 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180129 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180129 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181030 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190128 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190212 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190306 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6495025 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |