JP5646478B2 - 積層体およびその製造方法 - Google Patents

積層体およびその製造方法 Download PDF

Info

Publication number
JP5646478B2
JP5646478B2 JP2011522711A JP2011522711A JP5646478B2 JP 5646478 B2 JP5646478 B2 JP 5646478B2 JP 2011522711 A JP2011522711 A JP 2011522711A JP 2011522711 A JP2011522711 A JP 2011522711A JP 5646478 B2 JP5646478 B2 JP 5646478B2
Authority
JP
Japan
Prior art keywords
film
silicon
polysilazane
gas
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011522711A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2011007543A1 (ja
Inventor
高木　斗志彦
斗志彦 高木
晴彦 福本
晴彦 福本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Priority to JP2011522711A priority Critical patent/JP5646478B2/ja
Publication of JPWO2011007543A1 publication Critical patent/JPWO2011007543A1/ja
Application granted granted Critical
Publication of JP5646478B2 publication Critical patent/JP5646478B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/0427—Coating with only one layer of a composition containing a polymer binder
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/043—Improving the adhesiveness of the coatings per se, e.g. forming primers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/046—Forming abrasion-resistant coatings; Forming surface-hardening coatings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/048—Forming gas barrier coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/62—Nitrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
    • C08J2483/16—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Chemical Vapour Deposition (AREA)
  • Wrappers (AREA)
  • Electroluminescent Light Sources (AREA)
  • Silicon Polymers (AREA)
JP2011522711A 2009-07-17 2010-07-12 積層体およびその製造方法 Active JP5646478B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011522711A JP5646478B2 (ja) 2009-07-17 2010-07-12 積層体およびその製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2009169014 2009-07-17
JP2009169014 2009-07-17
JP2009207775 2009-09-09
JP2009207775 2009-09-09
JP2011522711A JP5646478B2 (ja) 2009-07-17 2010-07-12 積層体およびその製造方法
PCT/JP2010/004510 WO2011007543A1 (ja) 2009-07-17 2010-07-12 積層体およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2011007543A1 JPWO2011007543A1 (ja) 2012-12-20
JP5646478B2 true JP5646478B2 (ja) 2014-12-24

Family

ID=43449153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011522711A Active JP5646478B2 (ja) 2009-07-17 2010-07-12 積層体およびその製造方法

Country Status (9)

Country Link
US (1) US20120107607A1 (cg-RX-API-DMAC7.html)
EP (1) EP2455220B1 (cg-RX-API-DMAC7.html)
JP (1) JP5646478B2 (cg-RX-API-DMAC7.html)
KR (1) KR101687049B1 (cg-RX-API-DMAC7.html)
CN (1) CN102470637B (cg-RX-API-DMAC7.html)
IN (1) IN2012DN00642A (cg-RX-API-DMAC7.html)
MY (1) MY158201A (cg-RX-API-DMAC7.html)
TW (1) TWI499505B (cg-RX-API-DMAC7.html)
WO (1) WO2011007543A1 (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535838B2 (en) 2016-03-31 2020-01-14 Sumitomo Chemical Company, Limited Laminated film and process for manufacturing the same
US11038145B2 (en) 2016-03-31 2021-06-15 Sumitomo Chemical Company, Limited Laminated film and process for manufacturing the same, as well as method for analyzing laminated film
US11283043B2 (en) 2016-03-31 2022-03-22 Sumitomo Chemical Company, Limited Laminated film and process for manufacturing the same

Families Citing this family (472)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
JP2012004349A (ja) 2010-06-17 2012-01-05 Az Electronic Materials Kk シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
US20130122217A1 (en) * 2010-07-22 2013-05-16 Konica Minolta Holdings, Inc. Method of manufacturing gas barrier film
EP2599621B1 (en) * 2010-07-27 2016-03-02 Konica Minolta Holdings, Inc. Gas barrier film, process for production of gas barrier film, and electronic device
JP5531892B2 (ja) * 2010-10-04 2014-06-25 コニカミノルタ株式会社 ガスバリア性フィルム、ガスバリア性フィルムの製造方法、及び該ガスバリア性フィルムを有する有機電子デバイス
JP5652150B2 (ja) * 2010-11-18 2015-01-14 コニカミノルタ株式会社 ガスバリアフィルム及びその製造方法
WO2012067186A1 (ja) * 2010-11-19 2012-05-24 コニカミノルタホールディングス株式会社 ガスバリア性フィルムの製造方法、及びガスバリア性フィルム
KR101526083B1 (ko) * 2010-12-06 2015-06-04 코니카 미놀타 가부시키가이샤 가스 배리어성 필름, 가스 배리어성 필름의 제조 방법 및 전자 디바이스
EP2660042B1 (en) * 2010-12-27 2015-04-29 Konica Minolta, Inc. Method for manufacturing gas-barrier film, gas-barrier film, and electronic device
US9646940B2 (en) * 2010-12-27 2017-05-09 Konica Minolta, Inc. Gas barrier film and electronic device
JP5884531B2 (ja) * 2011-02-18 2016-03-15 コニカミノルタ株式会社 水蒸気バリアーフィルムの製造方法、水蒸気バリアーフィルム及び電子機器
WO2012160624A1 (ja) * 2011-05-20 2012-11-29 パイオニア株式会社 絶縁膜形成方法
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
CN103702933A (zh) * 2011-06-22 2014-04-02 Az电子材料Ip(日本)株式会社 形成氮氧化硅膜的方法和具有由此形成的氮氧化硅膜的衬底
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
KR101452680B1 (ko) * 2011-06-27 2014-10-22 코니카 미놀타 가부시키가이샤 가스 배리어성 필름, 가스 배리어성 필름의 제조 방법 및 전자 디바이스
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
CN103648764B (zh) * 2011-07-15 2016-05-04 柯尼卡美能达株式会社 气体阻隔性膜及其制造方法
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9512334B2 (en) * 2011-09-08 2016-12-06 Lintec Corporation Modified polysilazane film and method for producing gas barrier film
FR2980394B1 (fr) * 2011-09-26 2013-10-18 Commissariat Energie Atomique Structure multicouche offrant une etancheite aux gaz amelioree
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
CN104023971B (zh) * 2011-11-07 2016-03-16 琳得科株式会社 阻气膜和阻气膜的制造方法
CN103917364A (zh) 2011-11-11 2014-07-09 三菱瓦斯化学株式会社 透明耐热阻气性薄膜的制造方法
EP2783846A4 (en) * 2011-11-24 2015-09-02 Konica Minolta Inc GAS BARRIER LAYER AND ELECTRONIC DEVICE THEREFOR
EP2786808A4 (en) * 2011-11-30 2016-05-25 Lintec Corp MANUFACTURING METHOD FOR A GAS BRAKE PACK AND ELECTRONIC COMPONENT OR OPTICAL COMPONENT WITH THE GAS BORE FILM
CN103998230B (zh) * 2011-12-16 2015-11-25 柯尼卡美能达株式会社 气体阻隔膜
EP2805817A4 (en) * 2012-01-20 2015-09-23 Lintec Corp BARRIER FILM AGAINST GAS AND METHOD FOR PRODUCING BARRIER FILM AGAINST GAS
WO2013125352A1 (ja) * 2012-02-21 2013-08-29 リンテック株式会社 有機電子素子および有機電子素子の製造方法
FR2988520B1 (fr) * 2012-03-23 2014-03-14 Arkema France Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
JP5895684B2 (ja) * 2012-04-24 2016-03-30 コニカミノルタ株式会社 ガスバリア性フィルムの製造方法、および前記ガスバリア性フィルムを用いた電子デバイスの製造方法
JP2013226758A (ja) * 2012-04-26 2013-11-07 Konica Minolta Inc ガスバリア性フィルムの製造方法
JP5835083B2 (ja) * 2012-04-27 2015-12-24 コニカミノルタ株式会社 有機エレクトロニクスデバイス
JP5899044B2 (ja) * 2012-05-08 2016-04-06 三菱樹脂株式会社 ガスバリア性フィルム
EP2851192A4 (en) * 2012-05-14 2015-12-23 Konica Minolta Inc GASPERRFILM, METHOD FOR THE PRODUCTION OF GASPERRFILMS AND ELECTRONIC DEVICE
JP2015522454A (ja) * 2012-06-25 2015-08-06 コーロン インダストリーズ インク 透明ポリイミド基板およびその製造方法
US20150166751A1 (en) * 2012-07-06 2015-06-18 Mitsui Chemicals, Inc. Laminate
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US20140099798A1 (en) * 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JPWO2014061617A1 (ja) * 2012-10-19 2016-09-05 コニカミノルタ株式会社 改質方法
JP5961107B2 (ja) * 2012-12-26 2016-08-02 三井化学株式会社 積層体および積層体の製造方法
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
KR20140087412A (ko) * 2012-12-29 2014-07-09 제일모직주식회사 가스 배리어 필름 및 그 제조방법
CN104903089A (zh) * 2013-01-11 2015-09-09 东丽株式会社 阻气性膜
JP6252493B2 (ja) * 2013-01-11 2017-12-27 コニカミノルタ株式会社 ガスバリア性フィルム
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
KR101828662B1 (ko) * 2013-02-12 2018-02-12 코니카 미놀타 가부시키가이샤 유기 일렉트로루미네센스 소자 및 조명 장치
WO2014126388A1 (ko) * 2013-02-12 2014-08-21 한국기초과학지원연구원 자외선 차단 및 경도 및 내마모성이 향상된 폴리카보네이트
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
KR102267093B1 (ko) * 2013-03-29 2021-06-18 린텍 가부시키가이샤 가스 배리어성 적층체, 전자 디바이스용 부재 및 전자 디바이스
JP6222224B2 (ja) * 2013-04-23 2017-11-01 コニカミノルタ株式会社 ガスバリアーフィルムの製造方法
US20160059261A1 (en) * 2013-05-01 2016-03-03 Konica Minolta, Inc. Gas barrier film and method for producing the same
US9366784B2 (en) 2013-05-07 2016-06-14 Corning Incorporated Low-color scratch-resistant articles with a multilayer optical film
US9110230B2 (en) 2013-05-07 2015-08-18 Corning Incorporated Scratch-resistant articles with retained optical properties
JP2016136086A (ja) * 2013-05-10 2016-07-28 コニカミノルタ株式会社 水蒸気透過度評価方法、水蒸気透過度評価システム及びガスバリアーフィルムの製造方法
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US20160186009A1 (en) * 2013-08-07 2016-06-30 Konica Minolta, Inc. Gas barrier film
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
KR101676522B1 (ko) * 2013-11-29 2016-11-15 제일모직주식회사 가스 배리어 필름 및 그 제조방법
JP5578270B2 (ja) * 2013-12-18 2014-08-27 コニカミノルタ株式会社 ガスバリア性フィルム、その製造方法及びそのガスバリア性フィルムを用いた有機光電変換素子
JPWO2015108086A1 (ja) * 2014-01-14 2017-03-23 コニカミノルタ株式会社 ガスバリア性フィルムおよびこれを含む電子デバイス
KR102355268B1 (ko) 2014-01-29 2022-01-25 도레이 카부시키가이샤 가스 배리어성 필름
JPWO2015119260A1 (ja) * 2014-02-07 2017-03-30 コニカミノルタ株式会社 変性ポリシラザン、当該変性ポリシラザンを含む塗布液および当該塗布液を用いて製造されるガスバリア性フィルム
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
WO2015152302A1 (ja) * 2014-03-31 2015-10-08 コニカミノルタ株式会社 ガスバリア性フィルムおよびその製造方法、並びにこれを用いた電子デバイスおよびその製造方法
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9335444B2 (en) 2014-05-12 2016-05-10 Corning Incorporated Durable and scratch-resistant anti-reflective articles
US11267973B2 (en) 2014-05-12 2022-03-08 Corning Incorporated Durable anti-reflective articles
TWI691412B (zh) * 2014-06-04 2020-04-21 日商琳得科股份有限公司 氣阻性層積體及其製造方法、電子裝置用元件以及電子裝置
JP6287634B2 (ja) * 2014-06-27 2018-03-07 コニカミノルタ株式会社 ガスバリア性フィルム、その製造方法、およびこれを用いた電子デバイス
CN106536192B (zh) * 2014-07-14 2019-01-08 柯尼卡美能达株式会社 气体阻隔性膜和电子设备
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9790593B2 (en) 2014-08-01 2017-10-17 Corning Incorporated Scratch-resistant materials and articles including the same
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US20170207415A1 (en) 2014-09-10 2017-07-20 Konica Minolta, Inc. Gas barrier film and organic electroluminescent element
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
KR102387751B1 (ko) * 2015-03-11 2022-04-15 삼성전자주식회사 배리어 필름 및 이를 포함하는 양자점-폴리머 복합체 물품
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
JP6477077B2 (ja) * 2015-03-17 2019-03-06 コニカミノルタ株式会社 ガスバリア性フィルムの製造方法
JP6578689B2 (ja) * 2015-03-19 2019-09-25 コニカミノルタ株式会社 ガスバリア性フィルムおよび該ガスバリア性フィルムを用いた電子デバイス
EP3287274A4 (en) * 2015-04-22 2018-09-05 LINTEC Corporation Gas barrier film, electronic device member, and electronic device
JPWO2016190053A1 (ja) * 2015-05-22 2018-03-15 コニカミノルタ株式会社 ガスバリアー性フィルム及びガスバリアー性フィルムの製造方法
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
WO2017048700A1 (en) 2015-09-14 2017-03-23 Corning Incorporated High light transmission and scratch-resistant anti-reflective articles
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
CN205249324U (zh) * 2015-10-15 2016-05-18 开利公司 一种图像传感器终端以及楼宇管理系统
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
CN105552248A (zh) * 2016-01-26 2016-05-04 纳晶科技股份有限公司 一种电致发光器件的封装结构及其封装方法
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
KR102108560B1 (ko) * 2016-03-31 2020-05-08 주식회사 엘지화학 배리어 필름의 제조 방법
US10654070B2 (en) 2016-03-31 2020-05-19 Lg Chem, Ltd. Method for preparing a barrier film
DE102016106846A1 (de) * 2016-04-13 2017-10-19 Osram Oled Gmbh Mehrschichtige Verkapselung, Verfahren zur Verkapselung und optoelektronisches Bauelement
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
TWI649205B (zh) * 2016-10-14 2019-02-01 財團法人工業技術研究院 可撓性電子裝置
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR102762543B1 (ko) 2016-12-14 2025-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US10026620B1 (en) * 2017-06-22 2018-07-17 National Applied Research Laboratories Method of irradiating ultraviolet light on silicon substrate surface for improving quality of native oxide layer and apparatus using the same
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11435660B2 (en) 2017-11-22 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask and method of fabricating a photomask
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103613A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. A storage device for storing wafer cassettes for use with a batch furnace
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
WO2019142055A2 (en) 2018-01-19 2019-07-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
KR102657269B1 (ko) 2018-02-14 2024-04-16 에이에스엠 아이피 홀딩 비.브이. 주기적 증착 공정에 의해 기판 상에 루테늄-함유 막을 증착하는 방법
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
TWI656021B (zh) * 2018-03-30 2019-04-11 台虹科技股份有限公司 堆疊膜層
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
KR102709511B1 (ko) 2018-05-08 2024-09-24 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12272527B2 (en) 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
TWI879056B (zh) 2018-05-11 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
TWI815915B (zh) 2018-06-27 2023-09-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
TWI871083B (zh) 2018-06-27 2025-01-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
CN111094200B (zh) 2018-08-17 2022-01-07 康宁股份有限公司 具有薄的耐久性减反射结构的无机氧化物制品
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344B (zh) 2018-10-01 2024-10-25 Asmip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
KR102294026B1 (ko) * 2018-10-26 2021-08-27 주식회사 엘지화학 배리어 필름
US12378665B2 (en) 2018-10-26 2025-08-05 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
KR102294031B1 (ko) * 2018-10-26 2021-08-27 주식회사 엘지화학 배리어 필름
KR102294027B1 (ko) * 2018-10-26 2021-08-27 주식회사 엘지화학 배리어 필름
KR102300537B1 (ko) * 2018-10-26 2021-09-10 주식회사 엘지화학 배리어 필름
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR102748291B1 (ko) 2018-11-02 2024-12-31 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI866480B (zh) 2019-01-17 2024-12-11 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR102727227B1 (ko) 2019-01-22 2024-11-07 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
JP7603377B2 (ja) 2019-02-20 2024-12-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
JP7509548B2 (ja) 2019-02-20 2024-07-02 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR102858005B1 (ko) 2019-03-08 2025-09-09 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR102782593B1 (ko) 2019-03-08 2025-03-14 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR102809999B1 (ko) 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR102869364B1 (ko) 2019-05-07 2025-10-10 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP7598201B2 (ja) 2019-05-16 2024-12-11 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
JP7612342B2 (ja) 2019-05-16 2025-01-14 エーエスエム・アイピー・ホールディング・ベー・フェー ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200141931A (ko) 2019-06-10 2020-12-21 에이에스엠 아이피 홀딩 비.브이. 석영 에피택셜 챔버를 세정하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR102895115B1 (ko) 2019-07-16 2025-12-03 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102860110B1 (ko) 2019-07-17 2025-09-16 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112242295B (zh) 2019-07-19 2025-12-09 Asmip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899B (zh) 2019-07-30 2025-11-14 Asmip私人控股有限公司 基板处理设备
KR20210015655A (ko) 2019-07-30 2021-02-10 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
CN112309900B (zh) 2019-07-30 2025-11-04 Asmip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
KR20210018761A (ko) 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR102806450B1 (ko) 2019-09-04 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR102733104B1 (ko) 2019-09-05 2024-11-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US12469693B2 (en) 2019-09-17 2025-11-11 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TW202128273A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法
KR102879443B1 (ko) 2019-10-10 2025-11-03 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR102845724B1 (ko) 2019-10-21 2025-08-13 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR102890638B1 (ko) 2019-11-05 2025-11-25 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR102861314B1 (ko) 2019-11-20 2025-09-17 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697B (zh) 2019-11-26 2025-07-29 Asmip私人控股有限公司 基板处理设备
CN112885692B (zh) 2019-11-29 2025-08-15 Asmip私人控股有限公司 基板处理设备
CN120432376A (zh) 2019-11-29 2025-08-05 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP7703317B2 (ja) 2019-12-17 2025-07-07 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
JP7730637B2 (ja) 2020-01-06 2025-08-28 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
TWI887322B (zh) 2020-01-06 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102882467B1 (ko) 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TWI889744B (zh) 2020-01-29 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 污染物捕集系統、及擋板堆疊
TW202513845A (zh) 2020-02-03 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置結構及其形成方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR20210103956A (ko) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법
TW202146691A (zh) 2020-02-13 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TWI895326B (zh) 2020-02-28 2025-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 專用於零件清潔的系統
KR20210113043A (ko) 2020-03-04 2021-09-15 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 정렬 고정구
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR102775390B1 (ko) 2020-03-12 2025-02-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
US12173404B2 (en) 2020-03-17 2024-12-24 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR102755229B1 (ko) 2020-04-02 2025-01-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TWI887376B (zh) 2020-04-03 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體裝置的製造方法
TWI888525B (zh) 2020-04-08 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202143328A (zh) 2020-04-21 2021-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於調整膜應力之方法
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
TWI887400B (zh) 2020-04-24 2025-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於穩定釩化合物之方法及設備
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
TW202208671A (zh) 2020-04-24 2022-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括硼化釩及磷化釩層的結構之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR102783898B1 (ko) 2020-04-29 2025-03-18 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
JP7726664B2 (ja) 2020-05-04 2025-08-20 エーエスエム・アイピー・ホールディング・ベー・フェー 基板を処理するための基板処理システム
JP7736446B2 (ja) 2020-05-07 2025-09-09 エーエスエム・アイピー・ホールディング・ベー・フェー 同調回路を備える反応器システム
KR102788543B1 (ko) 2020-05-13 2025-03-27 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
TW202147383A (zh) 2020-05-19 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備
KR102795476B1 (ko) 2020-05-21 2025-04-11 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR20210145079A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 플랜지 및 장치
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
KR20210146802A (ko) 2020-05-26 2021-12-06 에이에스엠 아이피 홀딩 비.브이. 붕소 및 갈륨을 함유한 실리콘 게르마늄 층을 증착하는 방법
TWI876048B (zh) 2020-05-29 2025-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
KR20210156219A (ko) 2020-06-16 2021-12-24 에이에스엠 아이피 홀딩 비.브이. 붕소를 함유한 실리콘 게르마늄 층을 증착하는 방법
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
TWI873359B (zh) 2020-06-30 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TWI896694B (zh) 2020-07-01 2025-09-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積方法、半導體結構、及沉積系統
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12147009B2 (en) 2020-07-09 2024-11-19 Corning Incorporated Textured region to reduce specular reflectance including a low refractive index substrate with higher elevated surfaces and lower elevated surfaces and a high refractive index material disposed on the lower elevated surfaces
TWI864307B (zh) 2020-07-17 2024-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構、方法與系統
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
TWI878570B (zh) 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
TW202219303A (zh) 2020-07-27 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 薄膜沉積製程
KR20220021863A (ko) 2020-08-14 2022-02-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
TW202228863A (zh) 2020-08-25 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 清潔基板的方法、選擇性沉積的方法、及反應器系統
KR102855073B1 (ko) 2020-08-26 2025-09-03 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
KR20220033997A (ko) 2020-09-10 2022-03-17 에이에스엠 아이피 홀딩 비.브이. 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
KR20220036866A (ko) 2020-09-16 2022-03-23 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물 증착 방법
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TWI889903B (zh) 2020-09-25 2025-07-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR102873665B1 (ko) 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202229620A (zh) 2020-11-12 2022-08-01 特文特大學 沉積系統、用於控制反應條件之方法、沉積方法
EP4247908B1 (en) * 2020-11-20 2025-01-08 Merck Patent GmbH Method of manufacturing silicon nitrogeneous film
TW202229795A (zh) 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具注入器之基板處理設備
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
US12255053B2 (en) 2020-12-10 2025-03-18 Asm Ip Holding B.V. Methods and systems for depositing a layer
TW202233884A (zh) 2020-12-14 2022-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成臨限電壓控制用之結構的方法
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202232639A (zh) 2020-12-18 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具有可旋轉台的晶圓處理設備
TW202226899A (zh) 2020-12-22 2022-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具匹配器的電漿處理裝置
TW202242184A (zh) 2020-12-22 2022-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
USD1099184S1 (en) 2021-11-29 2025-10-21 Asm Ip Holding B.V. Weighted lift pin
US12403666B2 (en) 2021-12-03 2025-09-02 Canon Kabushiki Kaisha Light transmitting member and method of producing the same
USD1060598S1 (en) 2021-12-03 2025-02-04 Asm Ip Holding B.V. Split showerhead cover
JP2023158586A (ja) * 2022-04-18 2023-10-30 信越化学工業株式会社 反射防止材およびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000221302A (ja) * 1999-01-28 2000-08-11 Dainippon Printing Co Ltd 反射防止フィルム及びその製造方法
JP2003118030A (ja) * 2001-10-16 2003-04-23 Asahi Glass Co Ltd ガスバリヤ性有機基材およびそれを用いたエレクトロルミネッセンス素子
JP2007237588A (ja) * 2006-03-09 2007-09-20 Kyodo Printing Co Ltd ガスバリア性フィルム及びその製造方法
JP2009044057A (ja) * 2007-08-10 2009-02-26 Fujitsu Ltd シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置
JP2009255040A (ja) * 2008-03-25 2009-11-05 Kyodo Printing Co Ltd フレキシブルガスバリアフィルムおよびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06314686A (ja) * 1993-04-28 1994-11-08 Fujitsu Ltd 半導体装置及びその製造方法
JP3956398B2 (ja) 1995-03-31 2007-08-08 凸版印刷株式会社 被覆層形成用フィルムと被覆フィルム
JP4049841B2 (ja) 1996-12-27 2008-02-20 Ａｚエレクトロニックマテリアルズ株式会社 窒化珪素薄膜の形成方法
JP3971546B2 (ja) * 2000-03-03 2007-09-05 株式会社ノリタケカンパニーリミテド 多孔質セラミック積層体及びその製造方法
US6652978B2 (en) * 2001-05-07 2003-11-25 Kion Corporation Thermally stable, moisture curable polysilazanes and polysiloxazanes
JP2003229562A (ja) * 2002-02-05 2003-08-15 Sony Corp 半導体装置、その製造方法及び半導体製造装置
US6866949B2 (en) * 2002-03-08 2005-03-15 Dai Nippon Printing Co., Ltd. Substrate film, gas barrier film, and display using the same
JP4220819B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 放射線検出器
JP2005056587A (ja) * 2003-08-01 2005-03-03 Toyota Industries Corp Ｅｌ装置及びその製造方法
EP1846527B1 (en) * 2004-12-29 2008-08-06 3M Innovative Properties Company Multi-photon polymerizable pre-ceramic polymeric compositions
DE102006008308A1 (de) * 2006-02-23 2007-08-30 Clariant International Limited Polysilazane enthaltende Beschichtungen zur Vermeidung von Zunderbildung und Korrosion
JP5069582B2 (ja) * 2008-02-05 2012-11-07 有限会社コンタミネーション・コントロール・サービス シリカ膜の形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000221302A (ja) * 1999-01-28 2000-08-11 Dainippon Printing Co Ltd 反射防止フィルム及びその製造方法
JP2003118030A (ja) * 2001-10-16 2003-04-23 Asahi Glass Co Ltd ガスバリヤ性有機基材およびそれを用いたエレクトロルミネッセンス素子
JP2007237588A (ja) * 2006-03-09 2007-09-20 Kyodo Printing Co Ltd ガスバリア性フィルム及びその製造方法
JP2009044057A (ja) * 2007-08-10 2009-02-26 Fujitsu Ltd シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置
JP2009255040A (ja) * 2008-03-25 2009-11-05 Kyodo Printing Co Ltd フレキシブルガスバリアフィルムおよびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535838B2 (en) 2016-03-31 2020-01-14 Sumitomo Chemical Company, Limited Laminated film and process for manufacturing the same
US11038145B2 (en) 2016-03-31 2021-06-15 Sumitomo Chemical Company, Limited Laminated film and process for manufacturing the same, as well as method for analyzing laminated film
US11283043B2 (en) 2016-03-31 2022-03-22 Sumitomo Chemical Company, Limited Laminated film and process for manufacturing the same

Also Published As

Publication number Publication date
CN102470637A (zh) 2012-05-23
TWI499505B (zh) 2015-09-11
EP2455220A1 (en) 2012-05-23
CN102470637B (zh) 2016-04-06
JPWO2011007543A1 (ja) 2012-12-20
IN2012DN00642A (cg-RX-API-DMAC7.html) 2015-08-21
EP2455220A4 (en) 2012-12-26
TW201113152A (en) 2011-04-16
KR20120031228A (ko) 2012-03-30
WO2011007543A1 (ja) 2011-01-20
EP2455220B1 (en) 2015-11-25
KR101687049B1 (ko) 2016-12-15
US20120107607A1 (en) 2012-05-03
MY158201A (en) 2016-09-15

Similar Documents

Publication Publication Date Title
JP5646478B2 (ja) 積層体およびその製造方法
JP5734675B2 (ja) 積層体およびその製造方法
CN103596757B (zh) 水蒸气阻隔膜、及其制造方法以及使用了其的电子设备
JP5798747B2 (ja) 積層体の製造方法
JP6056854B2 (ja) ガスバリア性フィルム、ガスバリア性フィルムの製造方法及び電子デバイス
JP5929775B2 (ja) ガスバリア性フィルムおよびその製造方法、ならびに前記ガスバリア性フィルムを含む電子デバイス
JP5895687B2 (ja) ガスバリア性フィルム
CN105451984A (zh) 阻气性膜及其制造方法以及使用该阻气性膜的电子器件
JPH10279362A (ja) ＳｉＯ２系セラミックス膜の形成方法
JP5861644B2 (ja) ガスバリア性フィルムの製造方法、及びガスバリア性フィルム
TW201529338A (zh) 層合薄膜及撓曲性電子裝置
JP2012131194A (ja) ガスバリア性フィルム
WO2014178332A1 (ja) ガスバリア性フィルムおよびその製造方法
JP5987562B2 (ja) ガスバリア性フィルムの製造方法及び電子デバイス
JPH10212114A (ja) ＳｉＯ２系セラミックス膜の形成方法
JP2016022595A (ja) ガスバリア性フィルムおよびその製造方法ならびに当該ガスバリア性フィルムを有する電子デバイス
JP5768652B2 (ja) バリアーフィルムの製造方法
JP6295864B2 (ja) ガスバリア性フィルムおよびその製造方法、ならびにこれを用いた電子デバイス
JP2016022589A (ja) ガスバリア性フィルム
JP5493253B2 (ja) ガスバリアフィルム
JP2016022596A (ja) ガスバリア性フィルムおよびその製造方法ならびに当該ガスバリア性フィルムを有する電子デバイス
WO2016010118A1 (ja) ガスバリア性フィルムおよびガスバリア性フィルムの製造方法
JP5891822B2 (ja) 水蒸気バリアフィルムの製造方法およびこれを利用した電気デバイス

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140221

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141021

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141105

R150 Certificate of patent or registration of utility model

Ref document number: 5646478

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250