CN103702933A - 形成氮氧化硅膜的方法和具有由此形成的氮氧化硅膜的衬底 - Google Patents

形成氮氧化硅膜的方法和具有由此形成的氮氧化硅膜的衬底 Download PDF

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CN103702933A
CN103702933A CN201180071757.4A CN201180071757A CN103702933A CN 103702933 A CN103702933 A CN 103702933A CN 201180071757 A CN201180071757 A CN 201180071757A CN 103702933 A CN103702933 A CN 103702933A
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coating
film
silicon oxynitride
substrate
uviolizing
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N·申德
长原达郎
高野祐辅
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Merck Patent GmbH
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AZ Electronic Materials Japan Co Ltd
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Abstract

本发明提供了一种制备氮氧化硅膜的方法，其能降低能量成本；还涉及一种具有通过使用该制备方法制备的氮氧化硅膜的衬底。所述方法包括如下步骤：通过用包含聚硅氮烷化合物的成膜组合物涂覆衬底表面以在衬底表面上形成涂层；移除所述涂膜中所含的过量溶剂；然后在从所述涂膜中移除溶剂后，将所述涂膜在低于150℃的温度条件下暴露于紫外辐射中。

Description

形成氮氧化硅膜的方法和具有由此形成的氮氧化硅膜的衬底
技术领域
本发明涉及一种形成氮氧化硅膜的方法以及由此形成的氮氧化硅膜。具体地，本发明涉及一种高效且廉价的制备氮氧化硅膜的方法，所述氮氧化硅膜可有利地用作半导体器件或液晶显示器中的绝缘膜或保护膜，或者用作陶瓷、金属等的表面改性涂层。
背景技术
含硅陶瓷如二氧化硅、氮化硅和氮氧化硅的膜具有优异的耐热性和耐磨性，因此将其用作例如半导体器件和液晶显示器中的绝缘膜，以及用作像素电极或其中的滤色片上的保护膜。在这些膜中，与二氧化硅膜等相比，氮化硅膜的特征在于在高温下，尤其是在惰性或还原性气氛中很稳定，且为具有高折射率的透明膜。因此，考虑到致密性和高折射率，有利地将氮化硅膜用作新近光学器件中的保护膜或气体阻隔膜。
在上述技术领域中，氮化硅膜和氮氧化硅膜(在下文中通常分别称为“SiN膜”和“SiON膜”)通常根据化学气相沉积方法(下文称为“CVD法”)或其他气相沉积方法如溅射法在衬底上形成。
然而，含硅陶瓷膜也可根据涂布法形成，其中将包含含硅化合物(如氢氧化硅或聚硅氮烷)的可成膜涂布溶液涂布至衬底上，然后加热以将所述含硅化合物氧化并转化成二氧化硅、氮化硅或氮氧化硅。例如，已知如下方法，其中将全氢聚硅氮烷或其改性物涂布至衬底上，然后在600℃或更高下在真空中焙烧以获得SiN膜(专利文献1)。此外，还已知另一种如下方法，其中将包含全氢聚硅氮烷的组合物涂布至衬底上，然后通过在650℃下于惰性气氛中加热约30分钟而转化成无定形氮化硅(非专利文献1)。
广泛采用涂布法，这是因为其可在较简单的装置中预成型。然而，由于在较高温度下进行热处理，热能成本相当可观且该方法的生产率较低。
通常还采用气相沉积法。然而，根据CVD法形成的膜通常具有不够平滑的表面。此外，如果衬底具有其上提供有沟槽的表面，则难以均匀地填充沟槽，以至于在沟槽中形成孔隙。
为了克服气相沉积法的这些问题，已研究了在约350℃的温度下实施CVD程序以形成无定形氮化硅膜(非专利文献2)。然而，在该方法中，通常就已复杂的CVD程序变得更为复杂。此外，该方法的成本很高，且其生产率较低，因此仍有改进的空间。
此外，根据CVD法形成的SiN膜通常释放出氨气。因此，如果将通过CVD法形成的SiN膜用作其上形成抗蚀剂图案的底层防反射涂层，则所得抗蚀剂图案可能呈具有较低坡度的脊形式。该形式称为“抗蚀剂起脚(フツテイング)”，其对抗蚀剂图案是不利的。因此，通常需要在通过CVD法形成的SiN膜上形成SiO膜以作为包覆层。然而，如果具有包覆层，则抗蚀剂膜可能呈具有薄底部的脊形式。该形式称为“底夹(ボトムピンチ)”，这也对抗蚀剂图案是不利的。因此，如果将根据CVD法形成的SiN膜用作底层防反射涂层，则所得抗蚀剂图案容易形成起脚或底夹。一直希望克服该问题。
就SiN膜形成方法而言，存在降低涂布法中的热处理温度的尝试(专利文献2)。在该尝试中，将全氢型聚硅氮烷的溶液涂布至衬底上，然后在200-300℃下进行热处理，同时用紫外线进行照射以形成SiN膜。然而，从上述文献的实施例中所示的FT-IR谱判断，形成的膜可能不是SiN膜，而是二氧化硅膜。此外，该方法比常规涂布法更复杂。此外，尽管在较低温度下实施，该方法仍需要进行热处理。因此，考虑到降低热能成本，仍存在进一步改进的空间。
现有技术文献
专利文献
[专利文献1]：日本公开专利H10(1998)-194873
[专利文献2]：日本公开专利H7(1995)-206410
非专利文献
[非专利文献1]：Funayama等，J.Mat.Sci.，29(18)，第4883-4888页，1994
[非专利文献2]：Y.Kuo，J.Electrochem.Soc.，142，186，1995
发明内容
本发明所要解决的问题
如上所述，形成SiN膜的所有常规方法均具有复杂程序和高热能成本的问题。甚至当将现有技术用于形成SiON膜时，也应克服这些问题。
解决该问题的方式
本发明涉及一种形成氮氧化硅膜的方法，其包括：
涂布步骤，其中将包含聚硅氮烷化合物的可成膜涂料组合物涂布至衬底表面上以形成涂层；
干燥步骤，其中将所述涂层干燥以移除其中的过量溶剂；和
紫外线照射步骤，其中在低于150℃的温度下用紫外线照射经干燥的涂层。
本发明还涉及一种具有通过上述方法形成的氮氧化硅膜的衬底。
本发明还涉及一种形成抗蚀剂图案的方法，其中所述抗蚀剂图案通过光刻法形成，其中使用根据权利要求1-7中任一项的方法以在所述抗蚀剂层的衬底侧表面上形成由氮氧化硅制成的底层防反射涂层。
本发明的效果
本发明能仅通过所述步骤的一步形成SiON膜，因此比常规方法更易获得该膜。根据本发明，即使衬底具有其上提供有沟槽的表面，也可均匀填充所述沟槽，从而很少形成孔隙。此外，本发明可降低热能成本，以提高生产效率。就由本发明所提供的氮化硅膜的性能而言，可仅通过控制紫外线的辐照能而控制所述性能如衰减系数，因此可容易地形成具有所需性能的SiON膜。由此形成的SiON膜几乎不发生抗蚀剂起脚或底夹，具有优异的折射率，且可通过生产条件控制其吸收系数。因此，所述膜优选可用作光刻工艺中的底层防反射涂层。
本发明的最佳实施方式
下文详细描述本发明的实施方案。
本发明的形成SiON膜的方法用于在衬底表面上形成衍生自聚硅氮烷化合物的SiON膜。通过本发明形成的膜由氮氧化硅(SiON)制成，其由硅、氧和氮原子构成。在本发明中，所述膜的折射率(n)和吸收系数(k)可通过控制氧和氮的组分比而控制。氮含量越高，则越能改善所述膜的致密性，且因此越能改善所述膜的机械强度。此外，随着氮含量的增大，折射率倾向于增大。因此，所述膜优选由具有10重量%或更低氧含量的氮氧化硅制成。
所述SiON膜的氧含量取决于所用的可成膜涂料组合物的各组分和成膜条件。这些条件将在后文加以描述。
本发明用于在衬底上形成SiON膜，所述衬底没有特别的限制且可由任何材料如金属、无机或有机物质制成。例如，所述衬底可为裸硅晶片，或者如果需要，涂覆有热氧化物层的硅晶片。根据需要，所述衬底可具有各种结构如沟槽隔离槽。此外，所述衬底表面上可具有半导体器件和导线。
在本发明的形成SiON膜的方法中，用包含溶剂和聚硅氮烷化合物的可成膜涂料组合物涂覆衬底表面。本发明所用的聚硅氮烷化合物没有特别的限制，且因此可自由选择，除非其不利于本发明的效果。此外，其可为无机或有机化合物。无机聚硅氮烷化合物的实例包括具有直链结构的全氢硅氮烷化合物，其包含下式(I)所示的结构单元：
Figure BDA0000441628880000041
所述全氢聚硅氮烷化合物可根据任何已知方法制备。基本上，其在分子中包含链结构部分和环状结构部分，且如下式所示：
Figure BDA0000441628880000042
聚硅氮烷化合物的实例还包括具有主要包含下式(II)所示结构单元的主链的聚硅氮烷化合物及其改性化合物：
Figure BDA0000441628880000043
(其中R1、R2和R3各自独立地为氢、烷基、链烯基、环烷基、芳基、烷基甲硅烷基、烷基氨基、烷氧基或其他基团如含有与硅原子直接连接的碳原子的氟代烷基，条件是至少一个R1、R2和R3为氢)。
对本发明所用的聚硅氮烷化合物的分子量没有特别的限制。然而，所述化合物的由聚苯乙烯推导的平均分子量优选为1000-20000，更优选为1000-10000。可组合使用两种或更多种聚硅氮烷化合物。
本发明所用的可成膜涂料组合物包含能溶解上述聚硅氮烷化合物的溶剂。对所述溶剂没有特别的限制，只要其能溶解所用的聚硅氮烷。所述溶剂的优选实例包括：
(a)芳族化合物，如苯、甲苯、二甲苯、乙苯、二乙基苯、三甲基苯和三乙基苯；
(b)饱和烃化合物，如正戊烷、异戊烷、正己烷、异己烷、正庚烷、异庚烷、正辛烷、异辛烷、正壬烷、异壬烷、正癸烷和异癸烷；
(c)脂环族烃化合物，如乙基环己烷、甲基环己烷、环己烷、环己烯、对薄荷烷、十氢化萘、双戊烯和柠檬烯；
(d)醚，如二丙醚、二丁醚、二乙醚、甲基叔丁基醚(下文称为MTBE)和茴香醚；和
(e)酮，如甲基异丁基酮(下文称为MIBK)。
在上述溶剂中，特别优选(b)饱和烃化合物、(c)脂环族烃化合物、(d)醚和(e)酮。
这些溶剂可两种或更多种组合使用以控制蒸发速率、降低对人体的毒害并控制各组分的溶解度。
可采用市售溶剂。其实例包括：Pegasol AN45([商品名]，由EXXONMobil Corporation生产)，其为包含5-25重量%(含)的量的具有8个或更多个碳原子的芳族烃的脂族/脂环族烃混合物；和Pegasol D40([商品名]，由EXXON Mobil Corporation生产)，其为不含芳族烃的脂族/脂环族烃混合物。如果本发明采用溶剂混合物，则所述混合物优选包含其量基于该混合物的总重量为30重量%或更少的芳族烃以降低对人体的毒害。
需要的话，本发明所用的组合物可包含其他添加剂。任选添加剂的实例包括交联促进剂和粘度改进剂。此外，当用于制备半导体器件时，出于Na吸除效应，所述组合物可包含磷化合物如三(三甲基甲硅烷基)磷酸酯。
将上述聚硅氮烷化合物和需要的话的其他添加剂溶解或分散于上述有机溶剂中，以制备本发明所用的含聚硅氮烷化合物的组合物。在该制备中，对各组分在溶剂中的溶解顺序没有特别的限制。此外，在使各组分反应之后，可置换所述溶剂。
各组分的含量取决于所述组合物的用途。为了形成足够厚的SiON膜，所述聚硅氮烷化合物的含量优选为0.1-40重量%，更优选为0.1-20重量%，进一步优选为0.1-10重量%。
可根据通常已知的方法将所述可成膜组合物涂布至衬底表面上，如旋涂、浸涂、喷涂、移膜涂饰等。其中特别优选旋涂。所形成的涂层优选足够薄，从而当用紫外线以后文所述方式照射时可有效地硬化。具体地，涂层厚度优选为1μm或更低，更优选为0.2μm或更低。另一方面，所述厚度没有下限，且所述厚度以使得所形成的SiON膜可显示出所需效果的方式确定。所述涂层通常具有0.2μm或更低，优选0.1μm或更低的厚度。
然后，将在衬底表面上形成的涂层干燥以移除过量溶剂。在该步骤中，如果将所述涂层在较高温度下干燥，则可有效移除溶剂。然而，这并非优选的，这是因为施加外部热能会提高热能成本。因此，优选在不施加热能下干燥该涂层。然而，当将该涂层在高温下干燥时，干燥温度优选为150℃或更低，更优选为100℃或更低。
所述涂层可在减压下干燥。具体地，可借助真空泵、旋转泵等对涂覆有所述组合物的衬底施加负压，以促进该涂层中溶剂的蒸发，且由此促进干燥。
在干燥以移除过量溶剂之后，接着用紫外线照射所述涂层。紫外线照射的条件根据厚度、目标SiON膜的组成和硬度适当地加以选择，但通常如下文所述。
紫外线的波长通常为400-50nm，优选为300-100nm，更优选为250-150nm。为使所述涂层快速硬化，所述紫外线优选导致高能光电子。具体地，光电子的能量优选为3eV或更高，更优选为6eV或更高，特别优选为7eV或更高。
紫外线源的功率优选为1mW或更高，进一步优选为5mW或更高，特别优选为10mW或更高。照射时间通常为5分钟或更长，优选为30分钟或更长。辐照能必须足以使所述涂层中的聚硅氮烷转化成氮氧化硅，且除此之外没有特别的限制。辐照能优选不低于0.5kJ/m2，更优选不低于1.0kJ/m2。存在各种已知的紫外线源，且可使用其中的任一种。其实例包括氙放电灯、汞放电灯、准分子灯和紫外线LED。
紫外线照射的气氛根据目标SiON膜的组分等自由选择。例如，如果意欲形成含有高浓度氮的膜，则紫外线照射优选在包含少量氧气的气氛中进行。具体地，在这种情况下，紫外线照射在真空或减压下、或者在惰性气体气氛下进行。此外，还有效的是在抽出气氛以降低压力之后，引入惰性气体，然后在其中进行紫外线照射。惰性气体的实例包括氮气、氩气、氦气及其混合气体。本文所用的氮气足够惰性，以至于不吸收于SiON膜中，且因此不提高所述膜的氮含量。紫外线照射并非必需在气密室中进行，其可在惰性气流中进行。此外，照射可在惰性气体与(例如)氨或一氧化二氮的混合物中进行。在这种情况下，氨或一氧化二氮用作氮源以提高SiON膜中的氮含量。
为了降低能量成本，在紫外线照射中优选不施加外部能量。然而，只要不增加总成本，就可施加外部能量以提高温度，从而可使所述涂层快速硬化。即使在这种情况下，紫外线照射也在通常为150℃或更低，优选50℃或更低的温度下进行。
紫外线照射将所述涂层中的聚硅氮烷化合物转化成氮氧化硅以形成SiON膜。该转化可借助FT-IR监测。具体地，随着转化的进行，3350cm-1和1200cm-1处的吸收峰(这归因于N-H键)和2200cm-1处的峰(这归因于Si-H键)变弱并最终消失。因此，转化成SiON膜可通过观察这些峰的消失而证实。
由此形成的SiON膜具有优异的稳定性，致密性和透明性，因此可用作半导体器件等中的保护膜、绝缘膜或气体阻隔物。此外，所述膜也可用作半导体器件制备工艺中的顶层或底层防反射涂层。具体地，在其中抗蚀剂图案由光刻法形成的图案形成工艺中，可使用本发明的方法以在抗蚀剂层的上侧或衬底侧表面上形成作为防反射涂层的SiON膜，从而防止在抗蚀剂层中发生反射或干涉。本发明的SiON膜有利地用作防反射涂层，特别地用作在抗蚀剂层的衬底侧表面上形成的底层防反射涂层。例如，在其中采用ArF激光器(波长：193nm)作为光刻光源的情况下，所述底层防反射涂层在所述波长下具有优选为1.56-2.22，更优选1.70-2.10，进一步优选1.90-2.05的折射率，以及优选为0.20-0.80，更优选0.30-0.70，进一步优选0.40-0.60的吸收系数。另一方面，在其中采用KrF激光器(波长：248nm)作为光刻光源的情况下，所述底层防反射涂层在所述波长下具有优选为1.56-2.05，更优选1.60-1.90，进一步优选1.70-1.80的折射率，以及优选为0.20-1.90，更优选0.30-0.70，进一步优选0.40-0.60的吸收系数。由本发明所提供的SiON膜可充分满足那些要求。
下文通过使用下述实施例进一步阐述本发明。
实施例1
在1000rpm下，将全氢聚硅氮烷(重均分子量：1700)的二丁基醚溶液以含聚硅氮烷的可成膜组合物的形式涂布至硅晶片上。所述组合物的聚合物浓度为1重量%，所形成的涂层具有0.07μm的厚度。
然后，将在衬底上形成的涂层在热板上在80℃下干燥3分钟。
随后，将所述衬底置于具有石英窗的气密室中，并用旋转泵对该室抽真空，从而将内部压力降至76毫巴。接着引入氮气以使内部压力升高至环境压力，然后在速率为5L/分钟的氮气流中用紫外线照射该涂层。
紫外线的波长为172nm，光源的功率为10mW。照射时间和辐照能分别为15分钟和1.0kJ/m2。
在用紫外线照射之后，从该室中取出试样，借助FT/IR-660 PLUS分光光度计([商品名]，由JASCO corporation生产)和V紫外线302椭偏侧厚仪([商品名]，由J.A.Woollam Co.，Inc.生产)评价。
FT-IR评价的结果为，发现3350cm-1和1200cm-1处的峰(其原先为小峰，且归因于N-H键)几乎完全消失，而发现2200cm-1处的峰(其原先为较大峰且归因于Si-H键)变弱至约1/10。因此证实聚硅氮烷涂层几乎完全转化成SiON膜。所得膜在193nm处具有2.052的折射率和0.3357的吸收系数，这些值表明所述膜可令人满意地用作防反射涂层。
实施例2-9
重复实施例1的程序以形成膜，不同之处在于改变紫外线的照射时间和紫外线照射中的气氛气体。结果如表1所示。
表1
Figure BDA0000441628880000091
实施例10
在实施例5的条件下，在硅晶片上形成厚度为0.07μm的SiON膜。然后用远紫外线抗蚀剂AZ TX1311([商品名]，由AZ Electronic Materials Ltd.生产)涂覆所述SiON膜，以使得形成的抗蚀剂层在140℃下软烘180秒后具有0.846μm的厚度。随后，在248nm下借助FPA-3000EX5 D紫外线步进机(([商品名]，由Canon Inc.生产)对该软烘的抗蚀剂层进行曝光。在曝光后，将该晶片在110℃下后曝光180秒，随后在23℃下用2.38重量%TMAH水溶液单桨(シングルパドル)显影180秒。清洗并干燥所形成的线-空间图案，然后借助扫描电子显微镜观察。其结果是，发现所得图案足够好，以至于不发生抗蚀剂起脚或底夹。
实施例11
在实施例4的条件下，在硅晶片上形成厚度为0.07μm的SiON膜。然后用远紫外线抗蚀剂AZ TX3110P([商品名]，由AZ Electronic Materials Ltd.生产)涂覆所述SiON膜，以使得形成的抗蚀剂层在100℃下软烘180秒后具有0.105μm的厚度。随后，在193nm下借助NSR-S306D扫描仪(([商品名]，由Canon Inc.生产)对该软烘的抗蚀剂层进行曝光。在曝光后，将该晶片在110℃下后曝光60秒，随后在23℃下用2.38重量%TMAH水溶液单桨显影30秒。清洗并干燥所形成的线-空间图案，然后借助扫描电子显微镜观察。其结果是，发现所得图案足够好，以至于不发生抗蚀剂起脚或底夹。
对比实施例1
在如下RF功率条件下，根据等离子CVD法在硅晶片上形成厚度为0.093μm的SiN膜：0.3W/cm2(在13.56MHz下)，总RF功率：300W/cm2，衬底温度：330℃，引入气体：氨(NH3)/硅烷(SiH4)=1/2.5，气流：20sccm，真空度：12Pa。然后用远紫外线抗蚀剂AZ TX1311([商品名]，由AZElectronic Materials Ltd.生产)涂覆所形成的膜，以使得形成的抗蚀剂层在140℃下软烘180秒后具有0.85μm的厚度。随后，在248nm下借助FPA-3000EX5 D紫外线步进机(([商品名]，由Canon Inc.生产)对该软烘的抗蚀剂层进行曝光。在曝光后，将该晶片在110℃下后曝光180秒，随后在23℃下用2.38重量%TMAH水溶液单桨显影180秒。清洗并干燥所形成的线-空间图案，然后借助扫描电子显微镜观察。其结果是，发现所得图案发生抗蚀剂起脚。
对比实施例2
在与对比实施例1相同的条件下，根据等离子CVD法在硅晶片上形成厚度为0.025μm的SiN膜。然后用远紫外线抗蚀剂AZ TX3110P([商品名]，由AZ Electronic Materials Ltd.生产)涂覆所形成的膜，以使得形成的抗蚀剂层在100℃下软烘180秒后具有0.1μm的厚度。随后，在193nm下借助NSR-S306D扫描仪(([商品名]，由Canon Inc.生产)对该软烘的抗蚀剂层进行曝光。在曝光后，将该晶片在110℃下后曝光60秒，随后在23℃下用2.38重量%TMAH水溶液单桨显影30秒。清洗并干燥所形成的线-空间图案，然后借助扫描电子显微镜观察。其结果是，发现所得图案发生抗蚀剂起脚。
对比实施例3
以与实施例1相同的方式在硅晶片上形成厚度为0.07μm的全氢聚硅氮烷。然后用远紫外线抗蚀剂AZ TX1311([商品名]，由AZ ElectronicMaterials Ltd.生产)涂覆所形成的膜，以使得形成的抗蚀剂层在140℃下软烘180秒后具有0.846μm的厚度。随后，在248nm下借助FPA-3000EX5 D紫外线步进机(([商品名]，由Canon Inc.生产)对该软烘的抗蚀剂层进行曝光。在曝光后，将该晶片在110℃下后曝光180秒，随后在23℃下用2.38重量%TMAH水溶液单桨显影180秒。清洗并干燥所形成的线-空间图案，然后借助扫描电子显微镜观察。其结果是，发现所得图案发生如此大的抗蚀剂起脚以至于抗蚀剂也保留在空白区域中。

Claims (9)

1.一种形成氮氧化硅膜方法，其包括：
涂布步骤，其中将包含聚硅氮烷化合物的可成膜涂料组合物涂布至衬底表面上以形成涂层；
干燥步骤，其中将所述涂层干燥以移除其中的过量溶剂；和
紫外线照射步骤，其中在低于150℃的温度下用紫外线照射经干燥的涂层。
2.根据权利要求1的方法，其中所述紫外线照射步骤在室温下进行。
3.根据权利要求1的方法，其中所述紫外线照射步骤在除紫外线之外不施加任何外部能量下进行。
4.根据权利要求1-3中任一项的方法，其中所述紫外线照射步骤在惰性气氛下进行。
5.根据权利要求1-4中任一项的方法，其中所述紫外线为波长小于200nm的远紫外线。
6.根据权利要求1-5中任一项的方法，其中所述紫外线的辐照能为0.5kJ/m2或更高。
7.根据权利要求1-6中任一项的方法，其中所述涂层具有0.01-1.0μm的厚度。
8.一种衬底，其具有根据权利要求1-7中任一项的方法形成的氮氧化硅膜。
9.一种形成抗蚀剂图案的方法，其中所述抗蚀剂图案通过光刻法形成，其中将根据权利要求1-7中任一项的方法用于在抗蚀剂层的衬底侧表面上形成由氮氧化硅制成的底层防反射涂层。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110144548A (zh) * 2014-06-04 2019-08-20 琳得科株式会社 阻气性层合体及其制备方法、电子器件用部件以及电子器件
CN111696849A (zh) * 2019-03-13 2020-09-22 上海新微技术研发中心有限公司 一种复合薄膜、复合硅晶圆及其制备方法与应用

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2980394B1 (fr) * 2011-09-26 2013-10-18 Commissariat Energie Atomique Structure multicouche offrant une etancheite aux gaz amelioree
KR101629216B1 (ko) * 2014-11-24 2016-06-10 (주)디엔에프 눈부심 방지 유리 및 이의 제조 방법
DE102016203442A1 (de) 2016-03-02 2017-09-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zum Vermessen eines Projektionsobjektives
US10647578B2 (en) * 2016-12-11 2020-05-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications
WO2018193753A1 (ja) * 2017-04-17 2018-10-25 東京エレクトロン株式会社 絶縁膜の成膜方法、絶縁膜の成膜装置及び基板処理システム
TWI799516B (zh) 2018-02-21 2023-04-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 全氫聚矽氮烷組成物和用於使用其形成氧化物膜之方法
KR102584697B1 (ko) * 2020-11-20 2023-10-10 메르크 파텐트 게엠베하 규소 질소 필름의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107172A (en) * 1997-08-01 2000-08-22 Advanced Micro Devices, Inc. Controlled linewidth reduction during gate pattern formation using an SiON BARC
US20020113241A1 (en) * 2000-07-24 2002-08-22 Tdk Corporation Light emitting device
CN1392596A (zh) * 2001-06-19 2003-01-22 松下电器产业株式会社 有机薄膜形成方法
WO2010024378A1 (ja) * 2008-08-29 2010-03-04 独立行政法人産業技術総合研究所 酸化ケイ素薄膜または酸窒化ケイ素化合物薄膜の製造方法およびこの方法で得られる薄膜
WO2011007543A1 (ja) * 2009-07-17 2011-01-20 三井化学株式会社 積層体およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001176788A (ja) * 1999-12-21 2001-06-29 Hitachi Ltd パターン形成方法および半導体装置
JP2003118029A (ja) * 2001-10-16 2003-04-23 Asahi Glass Co Ltd ガスバリヤ性有機基材およびそれを用いたエレクトロルミネッセンス素子
JP4976590B2 (ja) * 2009-06-10 2012-07-18 パイオニア株式会社 コンタクトホールの形成方法、半導体装置の製造方法及び半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107172A (en) * 1997-08-01 2000-08-22 Advanced Micro Devices, Inc. Controlled linewidth reduction during gate pattern formation using an SiON BARC
US20020113241A1 (en) * 2000-07-24 2002-08-22 Tdk Corporation Light emitting device
CN1392596A (zh) * 2001-06-19 2003-01-22 松下电器产业株式会社 有机薄膜形成方法
WO2010024378A1 (ja) * 2008-08-29 2010-03-04 独立行政法人産業技術総合研究所 酸化ケイ素薄膜または酸窒化ケイ素化合物薄膜の製造方法およびこの方法で得られる薄膜
WO2011007543A1 (ja) * 2009-07-17 2011-01-20 三井化学株式会社 積層体およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110144548A (zh) * 2014-06-04 2019-08-20 琳得科株式会社 阻气性层合体及其制备方法、电子器件用部件以及电子器件
CN111696849A (zh) * 2019-03-13 2020-09-22 上海新微技术研发中心有限公司 一种复合薄膜、复合硅晶圆及其制备方法与应用

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