WO2018193753A1 - 絶縁膜の成膜方法、絶縁膜の成膜装置及び基板処理システム - Google Patents
絶縁膜の成膜方法、絶縁膜の成膜装置及び基板処理システム Download PDFInfo
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- WO2018193753A1 WO2018193753A1 PCT/JP2018/009752 JP2018009752W WO2018193753A1 WO 2018193753 A1 WO2018193753 A1 WO 2018193753A1 JP 2018009752 W JP2018009752 W JP 2018009752W WO 2018193753 A1 WO2018193753 A1 WO 2018193753A1
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- insulating film
- substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Definitions
- the present invention relates to a technique for forming an insulating film which is a coating film containing silicon oxide on a substrate and is cured by a crosslinking reaction.
- an insulating film such as a silicon oxide film
- the insulating film is formed by a method such as plasma CVD or application of a coating solution.
- An insulating film formed by plasma CVD has an advantage that a dense and high-quality film can be obtained, but its embedding property is poor. For this reason, for example, it is not suitable for embedding an insulator in a fine groove called STI (shallow trench isolation), and it is necessary to repeatedly perform plasma CVD and etch back so that a gap is not gradually formed.
- STI shallow trench isolation
- a method of applying a coating liquid to a semiconductor wafer (hereinafter referred to as “wafer”) by spin coating and curing the coating film to form an insulating film has good embeddability and forms a fine pattern such as STI.
- the coating film is heat treated (cured) at 600 ° C. to 800 ° C. to increase the strength of the film.
- Patent Document 1 describes a technique for forming an insulating film by heating a coating film at a low temperature after the coating film is applied, and then performing a treatment at a high temperature in a water vapor atmosphere. It does not solve.
- the present invention has been made under such circumstances, and an object of the present invention is to provide a technique capable of obtaining good film quality when an insulating film containing silicon oxide is formed as a coating film on a substrate. .
- the method for forming an insulating film of the present invention includes a step of applying a coating solution in which a precursor for forming an insulating film containing silicon oxide is dissolved in a solvent to form a coating film, A solvent volatilization step for volatilizing the solvent in the coating film; After this step, in order to generate dangling bonds in the molecular group constituting the precursor, an energy supply step of supplying energy to the coating film in a low oxygen atmosphere having a lower oxygen concentration than the atmosphere, Thereafter, the substrate is heated to cure the precursor, and the precursor is crosslinked to form an insulating film.
- An insulating film forming apparatus of the present invention is a coating module for forming a coating film by coating a substrate with a coating solution in which a precursor for forming an insulating film containing silicon oxide is dissolved in a solvent; A solvent volatilization module for volatilizing the solvent in the coating film; An energy supply module for supplying energy in a low oxygen atmosphere having a lower oxygen concentration than the atmosphere to the coating film in which the solvent is volatilized in order to activate the precursor; A cure module for heating the substrate after being processed in the energy supply module, and crosslinking the precursor to form an insulating film; And a substrate transport mechanism for transporting the substrate between the modules.
- the substrate processing system of the present invention applies a coating solution prepared by dissolving a precursor for forming an insulating film containing silicon oxide in a solvent, and a loading / unloading port for loading and unloading the substrate into and from a transfer container. Then, a coating module for forming a coating film, a solvent volatilization module for volatilizing the solvent in the coating film, and a coating film in which the solvent is volatilized to activate the precursor,
- a substrate processing apparatus comprising: an energy supply module for supplying energy in a low oxygen atmosphere having an oxygen concentration lower than that of the atmosphere; and a substrate transport mechanism for transporting a substrate between each module and the loading / unloading port.
- a curing device for heating the substrate after being processed by the energy supply module and crosslinking the precursor to form an insulating film; And a container transfer mechanism for transferring the transfer container between the carry-in / out port of the substrate processing apparatus and the curing apparatus.
- the present invention applies a coating liquid containing an insulating film precursor containing silicon oxide to a substrate, volatilizes the solvent of the coating liquid, and then applies energy to the coating film in a low oxygen atmosphere before performing a curing step. Supply. For this reason, an unbonded hand is easy to be generated at a site of hydrolysis in the precursor.
- hydroxyl groups are first bonded to the molecular group silicon constituting the precursor by hydrolysis, and then the hydroxyl groups of the molecular groups are dehydrated and condensed to perform crosslinking. Since the dangling bonds are generated, the generation efficiency of the hydroxyl group is increased.
- FIG. 1 is a plan view showing a substrate processing system according to an embodiment of the present invention. It is explanatory drawing explaining the film-forming process of the insulating film which concerns on the other example of embodiment of this invention. It is explanatory drawing explaining the film-forming process of the insulating film which concerns on the other example of embodiment of this invention. It is explanatory drawing explaining the film-forming process of the insulating film which concerns on the other example of embodiment of this invention. It is explanatory drawing explaining the film-forming process of the insulating film which concerns on the other example of embodiment of this invention. It is explanatory drawing explaining the film-forming process of the insulating film which concerns on the other example of embodiment of this invention. It is explanatory drawing explaining the film-forming process of the insulating film which concerns on the other example of embodiment of this invention. It is explanatory drawing explaining the film-forming process of the insulating film which concerns on the other example of embodiment of this invention. It is sectional drawing which shows the surface structure of the wafer which concerns on the other example of
- a coating solution containing a precursor of an insulating film containing silicon oxide is applied to a substrate, the obtained coating film is heated to volatilize a solvent in the coating film, Then, the substrate is heated to rearrange the molecular groups in the coating film, and thereafter, the coating film is irradiated with ultraviolet rays, and then the coating film is cured.
- the coating solution is manufactured by dissolving an oligomer group which is a molecular group of a precursor of an insulating film containing silicon oxide in a solvent which is a solvent.
- Si—H bonds of the oligomer are hydrolyzed (reacted) with H 2 O (water) as shown in FIG.
- dehydration condensation occurs to generate Si—O—Si bonds, and the oligomers are cross-linked.
- the oligomer is used as a component of the coating solution is that when the whole precursor is connected, it does not dissolve in the solvent. For this reason, the state of the oligomer, that is, the state before hydrolysis of the above-described precursor is stabilized, and hydrolysis is a process of shifting from this stabilized state to an unstable state, so that hydrolysis is promoted. However, it is necessary to increase the curing temperature or to react at a low temperature for a long time.
- the coating film is irradiated with ultraviolet rays to generate dangling bonds (activate oligomers, so to speak) at the site where hydrolysis occurs. That is, as shown in FIG. 2, the bond of Si—H in the oligomer is cut by the energy of ultraviolet rays to generate unbonded hands. For this reason, energy required for hydrolysis in the curing step is reduced, so that the generation efficiency of hydroxyl groups (OH groups) is increased, and the crosslinking rate by subsequent dehydration condensation is improved. This means that a dense insulating film (having good film quality) can be obtained even if the curing process is performed at a low temperature.
- the curing process is performed in a heated atmosphere of 350 ° C. to 450 ° C., for example, even though the temperature is low, so that when dangling bonds are generated by the energy of ultraviolet rays, Crosslinking occurs from the generated site, so that the oligomers whose Si—H bonds are not yet broken are confined in the cross-linked oligomer group, and the denseness of the insulating film is lowered.
- the step of irradiating the coating film with ultraviolet rays needs to be performed at a temperature at which such a phenomenon is suppressed. Specifically, for example, 350 ° C. or less is considered desirable, and can be performed at room temperature, for example. . Further, the step of irradiating the coating film with ultraviolet rays needs to be performed in a low oxygen concentration atmosphere in which the oxygen concentration is lower than that in the air atmosphere.
- the oxygen concentration is 400 ppm or less, preferably 50 ppm or less.
- An example of the low oxygen concentration atmosphere is an inert gas atmosphere such as nitrogen gas.
- a groove W (trench) 110 is formed in a silicon film 100 on a wafer W that is a substrate to be processed, and a coating solution in which a precursor of an SOG film is dissolved in an organic solvent is applied to the wafer W.
- the coating film 101 is formed so as to fill the trench 110.
- the precursor for example, polysilazane which is a polymer having a basic structure of — (SiH 2 NH) — is used.
- the coating solution for example, a molecular group of polysilazane is dissolved in an oligomer state in order to improve fluidity. Therefore, as shown in FIG. 3, for example, when applied to the wafer W by spin coating, a coating film 101 having a good embedding property can be obtained in which the coating liquid easily enters the narrow trench 110. 3 to 10, the coating film 101 is described as PSZ (polysilazane).
- the wafer W is heated at 100 to 250 ° C., for example, 150 ° C. for 3 minutes. As a result, the solvent that is the solvent contained in the coating film 101 is volatilized.
- the wafer W is heated at 200 to 300 ° C., for example, 250 ° C.
- the oligomer contained in the coating film 101 is activated by heat. Therefore, the oligomers in the coating film 101 are rearranged and arranged so as to fill the gap (reflow process). By performing this reflow process and the oligomers are rearranged, the gaps between the oligomers are narrowed. Therefore, a dense film tends to be formed when a cross-linking between oligomers is formed by a subsequent curing process.
- the coating film 101 5000 mJ / cm 2 or less, for example, the energy of 4000 mJ / cm 2 irradiation To do.
- the energy for example, ultraviolet light having a main wavelength of 200 nm or less, for example, ultraviolet light (UV) having a main wavelength of 172 nm is irradiated.
- the main wavelength refers to a wavelength corresponding to the maximum peak in the spectrum or the vicinity thereof.
- stepwise heat treatment is performed at a temperature of 350 to 450 ° C., for example, at 400 ° C. and 450 ° C. in an atmosphere of water vapor. Heat stepwise and further heat at 450 ° C. under N 2 gas atmosphere.
- FIG. 8 shows a reaction path when polysilazane is cured without irradiating ultraviolet rays
- FIG. 9 shows a reaction path when polysilazane irradiated with ultraviolet rays is cured.
- H bonded to Si becomes an OH group by hydrolysis, and further, an NH group is oxidized to ammonia (NH 3 ), thereby forming Si— O bonds are formed.
- NH 3 ammonia
- OH groups form a bridge
- the curing treatment is performed, hydrolysis hardly occurs and a film with low density is obtained.
- the excess coating film 101 on the surface of the wafer W is removed from the wafer W by chemical mechanical polishing (CMP), for example.
- CMP chemical mechanical polishing
- the coating film 101 is a highly dense silicon oxide film and is sufficiently polished to be polished by CMP.
- the silicon film 100 is exposed on the surface of the wafer W.
- the insulating film forming apparatus includes a carrier block S1 which is a carry-in / out port for carrying in / out the apparatus from a carrier C which is a transfer container including a plurality of wafers W, and a relay block. S2 and processing block S3 are connected in a line.
- the carrier block S1 is placed on a stage 11 on which a plurality of (for example, three) carriers C for storing and transporting a plurality of wafers W are placed, for example, in the lateral direction (X direction). And a delivery mechanism 12 that is a transfer arm for delivering the wafer W to the inside of the carrier C.
- the delivery mechanism 12 is configured such that the holding portion of the wafer W can move forward and backward, move in the X direction, rotate around the vertical axis, and move up and down.
- the relay block S2 has a role of delivering the wafer W taken out from the carrier C in the carrier block S1 to the processing block S3 side.
- the relay block S2 includes a transfer shelf 13 in which a plurality of mounting tables for wafers W are arranged vertically, a transfer mechanism 14 that can be moved up and down for transferring the wafer W between the mounting tables of the transfer shelf 13, It has.
- the transfer shelf 13 has a height position where the main transfer mechanisms 15a and 15b provided in the processing block S3 can transfer the wafer W, and a height position where the transfer mechanism 42 can transfer the wafer W.
- a mounting table for the wafer W is disposed.
- the processing block S3 has a two-story structure in which processing blocks B1 and B2 are stacked one above the other.
- the processing blocks B1 and B2 are configured in substantially the same manner, and the processing block B1 will be described as an example.
- the processing block B1 includes a main transport mechanism 15a that is movable along a transport path 16 formed of, for example, a guide rail that extends in the front-rear direction (Y direction) as viewed from the relay block S2.
- modules for processing the wafer W are arranged on both the left and right sides of the transfer path 16.
- an application module 2 for applying an application liquid is provided on the right side when viewed from the carry-in / out block S1.
- the solvent volatilization module 3, the reflow module 4, the ultraviolet irradiation module 5, and the two cure modules 6 are arranged side by side from the relay block S2.
- the insulating film forming apparatus is provided with a control unit 9 including, for example, a computer.
- the control unit 9 has a program storage unit, and an instruction is set in the program storage unit so that the wafer W is transferred in the film forming apparatus or the processing sequence of the wafer W in each module is executed.
- the program is stored.
- This program is stored in a storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), or a memory card and installed in the control unit 8.
- the processing block is passed through the delivery mechanism 12, the delivery shelf 13, and the transfer mechanism 14. It is conveyed to B1 or B2. Thereafter, the coating film 101 is applied to the wafer W by the coating module 2, and the wafer W is transferred in the order of the solvent volatilization module 3, the reflow module 4, the ultraviolet irradiation module 5, and the curing module 6 to form an insulating film. Thereafter, the wafer W is transferred to the transfer shelf 13 and returned to the carrier C by the transfer mechanism 14 and the transfer mechanism 12.
- the insulating film forming apparatus may include a polishing apparatus that performs CMP. For example, a polishing apparatus may be provided instead of one cure module 6. The wafer W after the curing process in the curing module 6 may be polished by CMP.
- the coating module 2 applies, for example, a coating solution obtained by dissolving polysilazane serving as a precursor of an insulating film in an organic solvent to the wafer W on which a pattern is formed by a known spin coating method.
- the coating module 2 includes a spin chuck 21 that is configured to suck and hold the wafer W and be rotatable and raised and lowered by the drive mechanism 22.
- 13 in FIG. 13 is a cup module.
- Reference numeral 24 in FIG. 13 denotes a guide member in which an outer peripheral wall and an inner peripheral wall extending downward are formed in a cylindrical shape.
- a discharge space is formed between the outer cup 25 and the outer peripheral wall, and the lower part of the discharge space has a structure capable of gas-liquid separation.
- a liquid receiving portion 27 is provided so as to extend from the upper end of the outer cup 25 toward the center and receive the liquid shaken off from the wafer W.
- the coating unit 2 includes a coating liquid nozzle 28. The coating unit 2 supplies a coating liquid to the central portion of the wafer W through the coating liquid nozzle 28 from a coating liquid supply source 29 in which a coating liquid such as polysilazane is stored.
- a coating film is formed by rotating the coating liquid on the surface of the wafer W by rotating it around the vertical axis at a predetermined rotational speed.
- the solvent volatilization module 3 includes a lower member 31 formed of a flat cylindrical body having an upper surface opened in a housing (not shown), and moves up and down relative to the lower member 31 to move the processing container 2.
- a processing container 30 including a lid 32 that opens and closes is provided.
- the lower member 32 is supported on the bottom surface portion 3a of the housing via a support member 41.
- the lower member 31 is provided with a heating plate 33 on which a wafer W is placed and a heating mechanism 34 for heating to 100 to 250 ° C. is embedded.
- An elevating mechanism 36 for elevating elevating pins 35 for passing the bottom of the lower member 25 and the heating plate 21 and transferring the wafer W to and from the external main transfer mechanism 15a is provided on the bottom surface portion 3a of the housing. Is provided.
- the lid portion 32 is formed of a flat cylindrical body having an open bottom surface, and an exhaust port 38 is formed at the center of the ceiling plate of the lid portion 32, and an exhaust pipe 39 is connected to the exhaust port 38. . Assuming that the processing vessel 30 side is the upstream side, the exhaust pipe 39 is connected at its downstream end to a common exhaust duct routed in the factory.
- the lid portion 32 is placed so as to be in contact with the pin 40 provided on the upper surface of the peripheral wall portion of the lower member 31, and is placed so that a slight gap is formed between the lid portion 32 and the lower member. Then, a processing space for heating the wafer W is formed. By exhausting from the exhaust port 38, the atmosphere in the housing is configured to flow into the processing container through the lid 32 and the lower member 25 and the gap.
- the lid portion 32 is configured to be able to move up and down between a lowered position where the lid portion 32 is in a state in which the processing container 2 is closed and an elevated position when the wafer W is transferred to the heating plate 21. Yes.
- the raising / lowering operation of the cover part 22 is performed by driving the raising / lowering mechanism 37 attached to the outer peripheral surface of the cover part 22.
- the reflow module 4 is configured in substantially the same manner as the solvent volatilization module 3 except that the heating mechanism 34 is configured to heat the wafer W to 200 to 300.degree.
- the ultraviolet irradiation module 5 which is an energy supply module, includes a flat rectangular housing 50 that is elongated in the front-rear direction, and the wafer W is loaded into and removed from the front side wall surface of the housing 50.
- a loading / unloading port 51 and a shutter 52 for opening and closing the loading / unloading port 51 are provided.
- a transfer arm 53 that transfers the wafer W to the front side when viewed from the loading / unloading port 51 is provided inside the housing 50.
- the transfer arm 53 is configured as a cooling plate, for example, configured to cool the wafer W to room temperature (25 ° C.) after the reflow process and before the ultraviolet irradiation process.
- a mounting table 54 for the wafer W is disposed on the back side as viewed from the loading / unloading port 71. Elevating pins 56 and 58 for transferring wafers are provided below the mounting table 54 and the transfer arm 53, and the elevating pins 56 and 58 are configured to be moved up and down by elevating mechanisms 57 and 59, respectively. .
- the lower surface of the lamp chamber 70 is provided with a light transmission window 72 that transmits ultraviolet light having a wavelength of 172 nm irradiated from the ultraviolet lamp 71 toward the wafer W.
- a gas supply unit 73 and an exhaust port 74 are provided on the side wall below the lamp chamber 70 so as to face each other.
- An N 2 gas supply source 75 for supplying N 2 gas into the housing 50 is connected to the gas supply unit 73.
- An exhaust mechanism 77 is connected to the exhaust port 74 via an exhaust pipe 76.
- N 2 gas is supplied from the gas supply unit 73 and exhausted to reduce the atmosphere of the wafer W to, for example, 400 ppm or less, preferably 50 ppm or less.
- An atmosphere for example, an N 2 gas atmosphere is used.
- N 2 gas is supplied from the N 2 gas supply source 75 to form a low oxygen atmosphere on the wafer W, for example, 4000 mJ. / Cm 2 of energy is irradiated
- the cure module 6 is configured by providing a processing container 60 including a lid 62 and a lower member 61 in a housing (not shown).
- a mounting table 63 on which the wafer W is mounted is provided in the processing container 60, and a heating mechanism 65 that heats the wafer W mounted on the mounting table 63 to 350 to 450 ° C., for example. Is provided.
- a gas inlet 65 is provided in the top plate portion of the lid 62, and one end of a gas supply pipe 66 is connected to the gas inlet 65.
- the other end of the gas supply pipe 66 is branched into two, and one end is connected to a steam supply source 67 for supplying steam into the processing vessel 60, and the other end is An N 2 gas supply source 68 for supplying N 2 gas into the processing container 60 is connected.
- V67 and V68 are valves
- M67 and M68 are flow rate adjusting units.
- a gas diffusion plate 69 is provided below the gas inlet 65 in the lid 62 so as to face the upper surface of the mounting table 63.
- the gas diffusion plate 69 is formed of, for example, a punching plate, diffuses the gas introduced into the processing container 60 from the gas introduction port 65, and supplies the gas toward the wafer W mounted on the mounting table 63.
- the lower member 61 is formed with an exhaust port 82. One end of an exhaust pipe 83 is connected to the exhaust port, and the other end side of the exhaust pipe 83 is connected to an exhaust part.
- the lid portion 62 is configured to be raised and lowered by an elevation mechanism 81 installed on the bottom surface portion of the housing, and the wafer W is loaded into the processing container 60 with the lid portion 62 raised and placed on the mounting table 63. Placed. Then, by lowering the lid 62, the processing container 60 is sealed, and a processing space for supplying water vapor while heating the wafer W mounted on the mounting table 63 is formed. Then, when the wafer W that has been subjected to the ultraviolet irradiation processing as described above is placed on the mounting table 63, the processing vessel 60 is filled with water vapor and the wafer W is stepped at 400 ° C. for 30 minutes and at 450 ° C. for 120 minutes. Then, the supply of water vapor is stopped, and heating is performed at 450 ° C. for 30 minutes in a nitrogen gas atmosphere.
- the coating film 101 is irradiated with ultraviolet rays in a nitrogen atmosphere. Irradiating. For this reason, a dangling hand is easy to be generated in a site hydrolyzed in polysilazane. Therefore, since dangling bonds are generated in advance in silicon that is a site to be hydrolyzed, the generation efficiency of the hydroxyl group is increased. That is, since the energy required for hydrolysis is reduced, even when the temperature of the curing process is set to 350 ° C., there are fewer sites remaining without being hydrolyzed. As a result, dehydration-condensation occurs efficiently, so that the cross-linking ratio is improved and a dense insulating film (having a good quality) can be formed.
- the present invention also includes a film forming apparatus that performs a process from coating processing to ultraviolet irradiation process and a heat treatment apparatus that performs a separate curing process, and transports the wafer W irradiated with ultraviolet light by the film forming apparatus to the heat treatment apparatus.
- It may be a substrate processing system for performing a curing process.
- the substrate processing system has a substrate processing apparatus 90 configured in the same manner as the insulating film forming apparatus shown in FIGS.
- a heat treatment apparatus 93 including a heat treatment furnace 97 for performing the above, and a conveyance vehicle (AVG) 98 which is a container conveyance mechanism for conveying the carrier C between the substrate processing apparatus 90 and the heat treatment apparatus 93 is provided.
- AVG conveyance vehicle
- the heat treatment apparatus 93 is mounted on the mounting shelf 96, a carrier block S 1 on which the carrier C is transported, a delivery mechanism 94 that takes out the wafer from the carrier C, a mounting shelf 96 on which the wafer W taken out from the carrier C is placed, and A transfer mechanism 95 for transferring the wafer W to the heat treatment furnace 97 is provided.
- the heat treatment furnace 97 for example, a known heat treatment furnace is used, and a plurality of substrates are arranged in a shelf shape on a substrate holder and carried into a vertical reaction tube surrounded by a heater to perform heat treatment (curing). .
- the substrate processing system includes a control signal to the control unit 91 of the substrate processing apparatus 90 and the control unit 92 of the heat treatment apparatus 93 having a program for executing the transfer and cure process of the wafer W in the heat treatment apparatus 93. And a host computer 99 that controls the transport of the carrier C by the transport vehicle 98.
- the host computer 99 stores a program for executing the above-described insulating film forming method, and the substrate processing apparatus 90 performs steps from application of the coating liquid to the wafer W to ultraviolet irradiation processing. Then, the wafer W irradiated with ultraviolet rays is accommodated in the carrier C, and is transferred to the heat treatment apparatus 93 by the transfer vehicle 98 to be cured.
- an insulating film forming method can be similarly applied.
- an insulating film having high strength can be formed even if a substrate processing system including a heat treatment furnace is used.
- a substrate processing system including a heat treatment furnace since the temperature of the curing process can be lowered, there is an effect that it is not necessary to provide a substrate processing system including a dedicated heat treatment furnace for performing a high temperature process in performing the insulating film forming process.
- the curing process may be performed by heating while supplying ammonia gas.
- the gas supplied during the curing process may be N 2 gas.
- the present invention may also be applied to the formation of an interlayer insulating film such as a low dielectric constant film.
- the heating temperature is required to be 450 ° C. or lower, for example, 400 ° C. or lower, in order to suppress migration and diffusion of copper as a wiring material. Further, it is preferable that the temperature is 300 ° C. or more from the viewpoint of configuring the interlayer insulating film with sufficient hardness.
- a high-quality insulating film can be obtained even when the curing temperature is low, and therefore, it can be expected to be applied to the formation of an interlayer insulating film.
- the present invention may be applied to PMD (Pre Metal Dielectric) as an example of forming an insulating film on a substrate in which a thin groove is formed.
- PMD Pre Metal Dielectric
- the insulating film may be formed by applying the coating liquid a plurality of times.
- the wafer W on which the trench 110 is formed is transferred to the coating module 2, and the coating liquid is applied for the first time.
- a coating film 101a is formed in a state where the coating liquid has entered the trench 110 formed in the silicon film 100.
- a coating film formed by the first application of the coating liquid is denoted by 101a
- a coating film formed by the second coating of the coating liquid is denoted by 101b.
- the wafer W is transferred to the solvent volatilization module 3 in the same manner as in the embodiment, and after the solvent is volatilized, for example, the wafer W is transferred to the ultraviolet irradiation module 5 and applied to the coating film 101a in a low oxygen atmosphere as shown in FIG. Irradiate ultraviolet rays.
- the wafer W is transferred to the coating module 2 and a second coating process is performed. As a result, the coating film 101b is further laminated on the wafer W as shown in FIG.
- the wafer W is transferred to the solvent volatilization module 3 to volatilize the solvent, and then transferred to the ultraviolet irradiation module 5 to irradiate the coating film 101b with ultraviolet rays in a low oxygen atmosphere as shown in FIG.
- the wafer W is transferred to the cure module 6 and heated stepwise at 400 ° C. and 450 ° C., for example, in a water vapor atmosphere and then heated to 450 ° C. in an N 2 gas atmosphere as shown in FIG.
- the wafer W is transferred to a CMP apparatus, and the surface coating film 101b is removed by CMP as shown in FIG.
- the ultraviolet rays are transmitted from the surface layer side to the lower layer side of the coating films 101a and 101b.
- the Si—H bond may not be sufficiently dangling because it tends to weaken.
- the crosslinking rate may be lowered on the lower layer side of the coating films 101a and 101b, and the crosslinking rate as a whole film may be lowered.
- the surface coating film is removed by CMP, a layer with poor film quality in the coating film may be exposed.
- the application of the coating films 101a and 101b and the ultraviolet irradiation are repeated a plurality of times to form the coating films 101a and 101b having a predetermined film thickness, so that the ultraviolet irradiation treatment can be performed with the coating films 101a and 101b being thin. Then, dangling bonds are easily formed in all layers of the coating films 101a and 101b. For this reason, when the curing process is performed, crosslinking is easily formed in all layers of the coating films 101a and 101b, and dense coating films 101a and 101b having a high crosslinking rate can be formed over all layers. As a result, a denser insulating film having high etching strength can be formed as shown in Example 2 described later.
- the solvent is volatilized, and the coating film 101a is irradiated with ultraviolet rays in a low oxygen atmosphere, and then is transported to the cure module 6 and heated to, for example, 350 ° C. in a steam atmosphere. .
- a second coating process may be performed to volatilize the solvent, and then the coating film 101b may be irradiated with ultraviolet rays in a low oxygen atmosphere to further perform a curing process.
- a reflow process of heating the wafer W at 250 ° C. may be performed.
- FIG. 24 shows an example of a substrate to be processed on which a sacrificial film is formed.
- a polysilicon layer 103 is formed on the upper surface of the SiO 2 film 102, and a trench 110 is formed so as to penetrate the polysilicon layer 103 in the thickness direction.
- a SiON film 104 serving as a sacrificial film is formed on the upper surface of the wafer W.
- FIG. 24 shows a state of a cross section of the surface layer portion of the wafer W after the SiON film 104 is formed and then the SiON film 104 is etched with a predetermined pattern.
- the etching selectivity of the SiO 2 layer 102 to the SiON film 104 and the polysilicon layer 103 is used to cover the bottom of the trench 110 from which the SiON film 104 has been removed without being covered with the SiON film 104.
- the SiO 2 layer 102 is etched.
- the sacrificial film such as the SiON film 104 is formed on the wafer W on which unevenness such as a circuit pattern is formed, it is preferable that the filling property is good. Therefore, it is preferable to form a film by applying a coating solution.
- the etching strength is preferably high because the etching selectivity with the SiO 2 film 102 is sufficiently increased here.
- a coating solution containing polysilazane as a precursor is applied to the wafer W. Thereafter, as shown in FIGS. 3 to 6, the coating film 101 is heated at, for example, 150 ° C. for 3 minutes to volatilize the solvent in the coating film 101, and then heated at 250 ° C.
- the coating film 101 is irradiated with ultraviolet rays of 5000 J / cm 2 or less in a low oxygen atmosphere.
- the cure module 6 a curing process is performed in which the wafer W is heated stepwise at 400 ° C. and 450 ° C. in an N 2 gas atmosphere.
- —Si (NH) Si— contained in the polysilazane is replaced with a Si—O—Si bond. Is done.
- the substitution rate from this —Si (NH) Si— to Si—O—Si bond is high, the film approaches SiO 2 and forms a film so as to leave a larger amount of —Si (NH) Si—.
- the coating film 101 is heated to 350 ° C. in an N 2 gas atmosphere.
- the temperature at which crosslinking proceeds for example, polysilazane
- the temperature at which crosslinking proceeds for example, polysilazane
- the temperature at which crosslinking proceeds is raised to 350 to 400 ° C.
- the formation of dangling hands and hydrolysis and dehydration condensation may proceed simultaneously.
- the isolated oligomer is confined in the bonded oligomer, and as a result, the denseness of the insulating film is lowered. Therefore, the temperature for irradiating ultraviolet rays is preferably 350 ° C. or lower.
- ultraviolet rays may be irradiated in the reflow process.
- the solvent which is a solvent
- the solvent which is a solvent
- the energy irradiation amount is preferably 5000 J / cm 2 or less, and may be an irradiation amount sufficient to cut the terminal end of the Si—H bond.
- the effect can be improved by executing the above-described insulating film forming method by setting the heating temperature of the wafer W in the solvent volatilization step to 200 to 250 ° C. This is because the energy absorbed in the solvent is reduced by removing the solvent in the coating film 101 more reliably, and in Example 3, the reflow process is not performed, and the oligomer is rearranged in the reflow process. It is presumed that this is a synergistic effect due to the corresponding effect.
- the main wavelength is preferably 200 nm or less.
- ultraviolet rays having a wavelength of 193 nm such as an ArF lamp may be used, or a deuterium lamp may be used.
- an electron beam or the like may be used as the energy applied to the coating film.
- the apparatus for volatilizing the solvent in the coating film 101 used in the solvent volatilization process for example, reduces the inside of a sealed processing container to, for example, half of the atmospheric pressure, and promotes the volatilization of the solvent in the wafer W placed in the processing container.
- a device that volatilizes the solvent may be used.
- Example 1 Principal wavelength under N 2 gas atmosphere in the ultraviolet irradiation step in the film forming method of the insulating film was irradiated Examples Example 1-1 to a dose of ultraviolet radiation of 172nm is 2000 mJ / cm 2.
- the wafer W heated the wafer W for 3 minutes at 150 degreeC in the solvent volatilization process, and performed the ultraviolet irradiation process without performing the reflow process after that.
- the subsequent curing process after two stages of heating at 400 ° C. for 30 minutes and 450 ° C. for 120 minutes with steam supplied in a heat treatment furnace, 450 ° C. for 30 minutes in an N 2 gas atmosphere. Heated.
- the target film thickness of the coating film was 100 nm.
- Comparative Example 1 an example treated in the same manner as in Example 1-1 except that 2000 mJ / cm 2 of ultraviolet light was irradiated in an air atmosphere was set as Comparative Example 1.
- Comparative Example 2 was treated in the same manner as Example 1-1 except that no ultraviolet irradiation was performed.
- Example 1 and Comparative Examples 1 and 2 wet etching was performed with 0.5% diluted hydrofluoric acid to evaluate the etching amount (etching rate) per unit time, and the heat of silicon with respect to 0.5% diluted hydrofluoric acid.
- the relative etching rate in each example when the etching rate of the oxide film was set to 1 was obtained.
- the etching strength was evaluated based on this relative etching rate.
- the relative etching rates in Comparative Examples 1 and 2 were 3.74 and 5.55, respectively.
- the relative etching rate in Example 1 was 2.04.
- the etching strength is irradiated by irradiating the coating film before the curing process with ultraviolet energy in an N 2 gas atmosphere. It can be said that it can be increased.
- Example 1 Furthermore, in each of Example 1 and Comparative Example 1, (FT-IR: Fourier transform infrared spectrophotometer) was used to evaluate the amount of atomic bonds before and after the ultraviolet irradiation treatment and after the curing treatment.
- Comparative Example 1 the Si—H bond decreased and the Si—O bond increased after the ultraviolet irradiation treatment.
- Example 1 although the Si—H bond decreased after the ultraviolet irradiation treatment, the Si—O bond did not increase, and the Si—O bond increased after the curing treatment.
- the Si—H bond is reduced by the ultraviolet irradiation treatment, and dangling bonds can be formed.
- the ultraviolet irradiation treatment is performed in an air atmosphere, prior to the curing treatment, When the crosslinking reaction proceeds and the ultraviolet irradiation treatment is performed in an N 2 gas atmosphere, it is considered that the crosslinking reaction before the curing treatment can be suppressed. And it is estimated that an etching strength increases by forming a dangling hand before a cure process and suppressing a crosslinking reaction.
- the relative etching rate was evaluated to be 2.70.2.42, and the intensity was even at a dose of about 4000 mJ / cm 2. Insulating film with high thickness could be obtained.
- the dose of ultraviolet light having a wavelength of 172 nm irradiated in an N 2 gas atmosphere was set to 4000 mJ / cm 2 . Furthermore, after applying the same amount of the application liquid as the first application liquid as the application of the second application liquid, in the solvent volatilization process, the wafer W is heated at 150 ° C. for 3 minutes, and then the reflow process is not performed. As in the embodiment, an ultraviolet irradiation process was performed. An example in which the same curing process as that in Example 1 was performed thereafter was taken as Example 2-1. The supply amount of the coating liquid in the first coating liquid coating and the second coating liquid coating was approximately the same as in Example 1, and the target film thickness of the coating film after the curing treatment was 200 nm.
- Example 2-2 The coating amount of the coating liquid as the amount of approximately 2-fold in Example 1, was deposited a target thickness of the coating film as 200 nm, the dose of ultraviolet radiation of wavelength 172nm is irradiated under N 2 gas atmosphere in the ultraviolet irradiation step Example 2-2 was treated in the same manner as in Example 1 except that it was set to 4000 mJ / cm 2 .
- the relative etching rates in Examples 2-1 and 2-2 were 2.27 and 2.56, respectively. It can be seen that in both Examples 2-1 and 2-2, the relative etching rate is low and the etching strength is high. Further, it can be seen that the relative etching rate is lower in Example 2-1 than in Example 2-2. According to this result, it can be said that a denser and better insulating film can be obtained by repeating the application of the coating liquid to the wafer W and the ultraviolet irradiation treatment to the coating film a plurality of times.
- Examples 3-2 and 3-3 were processed in the same manner as in Example 3-1, except that the heating temperature of the wafer W in the solvent volatilization process was set to 200 ° C. and 250 ° C.
- the relative etching rates in Examples 3-1, 3-2, and 3-3 were 3.68, 2.74, and 2.74, respectively. It can be said that a denser and better insulating film can be obtained by raising the heating temperature of the wafer W in the solvent volatilization step.
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Abstract
Description
前記塗布膜中の溶媒を揮発させる溶媒揮発工程と、
この工程の後、前記前駆体を構成する分子団に未結合手を生成するために、大気よりも酸素濃度が低い低酸素雰囲気で前記塗布膜にエネルギーを供給するエネルギー供給工程と、
その後、前記基板を加熱し、前記前駆体を架橋させて絶縁膜を形成するキュア工程と、を含むことを特徴とする。
前記塗布膜中の溶媒を揮発させるための溶媒揮発モジュールと、
前記前駆体を活性化させるために、溶媒が揮発された塗布膜に対して、大気よりも酸素濃度が低い低酸素雰囲気でエネルギーを供給するためのエネルギー供給モジュールと、
前記エネルギー供給モジュールにて処理された後の基板を加熱し、前記前駆体を架橋させて絶縁膜を形成するためのキュアモジュールと、
各モジュールの間で基板を搬送するための基板搬送機構と、を備えたことを特徴とする。
前記エネルギー供給モジュールにて処理された後の基板を加熱し、前記前駆体を架橋させて絶縁膜を形成するためのキュア装置と、
前記基板処理装置の前記搬入出ポートと前記キュア装置との間で前記搬送容器を搬送するための容器搬送機構と、を備えたことを特徴とする。
本発明の実施形態の詳細について説明する前に、本発明の概要について述べておく。本発明の絶縁膜の成膜方法の一例として、酸化シリコンを含む絶縁膜の前駆体を含む塗布液を基板に塗布し、得られた塗布膜を加熱して塗布膜中の溶媒を揮発させ、次いで基板を加熱して塗布膜中の分子団の再配列を行い、その後、塗布膜に紫外線を照射し、しかる後、塗布膜をキュアする工程が挙げられる。
この工程が行われる雰囲気において酸素濃度が高いと、紫外線の照射により生成された未結合手を有するオリゴマー同士が瞬時で結合し、結合されたオリゴマーの中に、孤立したオリゴマーが閉じ込められ、結果として絶縁膜の緻密性が低くなる。
次に本発明の絶縁膜の成膜方法の実施の形態について詳述する。この例では、被処理基板に対してSTIを行うプロセスについて説明する。図3に示すように被処理基板であるウエハWには、シリコン膜100に溝部(トレンチ)110が形成されており、そしてSOG膜の前駆体を有機溶剤に溶解した塗布液をウエハWに塗布することにより、トレンチ110を埋めるように塗布膜101が形成される。前駆体としては、例えば-(SiH2NH)‐を基本構造とするポリマーであるポリシラザンが用いられる。塗布液は、例えば流動性を良くするためにポリシラザンの分子団がオリゴマーの状態で溶解している。そのため図3に示すように、例えばスピンコーティングによりウエハWに塗布したときに塗布液が細いトレンチ110内に進入しやすく埋め込み性の良好な塗布膜101が得られる。なお図3~図10では、塗布膜101にPSZ(ポリシラザン)と記載している。
なお絶縁膜の成膜装置は、CMPを行う研磨装置を備えてもよく、例えば一方のキュアモジュール6に代えて研磨装置を設けてもよい。そしてキュアモジュール6にてキュア処理を行った後のウエハWをCMPにより研磨するように構成してもよい。
またリフローモジュール4は、加熱機構34により、ウエハWが200~300℃に加熱するように構成されたことを除いて溶媒揮発モジュール3とほぼ同様に構成されている。
筐体50の内部は、搬入出口51から見て手前側にウエハWを搬送する搬送アーム53が設けられている。搬送アーム53は、クーリングプレートとして構成され、例えばリフロー工程後、紫外線照射処理の前に、ウエハWを常温(25℃)まで冷却できるように構成されている。搬入出口71から見て奥側には、ウエハWの載置台54が配置されている。載置台54及び搬送アーム53の下方にはウエハの受け渡しを行うための昇降ピン56、58が夫々設けられ、昇降ピン56、58は、夫々昇降機構57、59により昇降するように構成されている。
そして載置台54に載置されたウエハWに紫外線を照射するときには、ガス供給部73からN2ガスを供給すると共に排気を行い、ウエハWの雰囲気を例えば400ppm以下より好ましくは50ppm以下の低酸素雰囲気、例えばN2ガス雰囲気とするように構成されている。搬送アームに53にて常温まで冷却されたウエハWが載置台54に載置されると、N2ガス供給源75からN2ガスを供給し、低酸素雰囲気とした状態でウエハWに例えば4000mJ/cm2のエネルギーが照射される
そして既述のように紫外線照射処理を行ったウエハWが載置台63に載置されると、処理容器60内に水蒸気を満たすと共にウエハWを400℃で30分、450℃で120分段階的に加熱した後、水蒸気の供給を停止し、窒素ガス雰囲気下で450℃で30分加熱する。
また本発明は、低誘電率膜などの層間絶縁膜の成膜に適用してもよい。層間絶縁膜の成膜にあたっては、配線材料である銅のマイグレーションや拡散を抑えるために、加熱温度は、450℃以下、例えば400℃以下にすることが要請されている。また層間絶縁膜を十分な硬度に構成する観点から300℃以上出ることが好ましい。本発明ではキュア温度が低温であっても良質な膜質の絶縁膜が得られることから、層間絶縁膜の成膜に適用することが期待できる。また例えば細い溝部が形成された基板に絶縁膜を形成する例としてPMD(Pre Metal Dielectric)に適用してもよい。
さらに1回目の塗布処理及び2回目の塗布処理における溶剤を揮発させた後に、例えばウエハWを250℃で加熱するリフロー工程を行うようにしてもよい。
SiON膜104を成膜するにあたっては、例えば前駆体としてポリシラザンを含んだ塗布液をウエハWに向けて塗布する。その後図3~図6に示したように、塗布膜101を例えば150℃で3分加熱して塗布膜101中の溶剤を揮発させた後、250℃で加熱して塗布膜101のリフローを行う。次いで塗布膜101に向けて、低酸素雰囲気下で5000J/cm2以下の紫外線を照射する。その後、キュアモジュール6において、N2ガス雰囲気下でウエハWを400℃、450℃で段階的に加熱するキュア工程を行う。
そのため紫外線を照射する温度は、350℃以下であることが好ましい。また紫外線照射時に架橋の進行しない温度であることが要件であることから、リフロー工程において紫外線を照射するようにしてもよい。しかしながら溶剤揮発工程においては、溶媒である溶剤が紫外線の照射により変質するおそれもある。そのため、溶剤揮発工程以後である必要がある。
また溶剤揮発工程に用いる塗布膜101中の溶剤を揮発させる装置は、例えば密閉した処理容器内を例えば大気圧の半分まで減圧し、処理容器内に載置したウエハWにおける溶剤の揮発を促進して溶剤を揮発させる装置でも良い。
本発明の実施の形態の効果を検証するために以下の試験を行った。図17に示した基板処理システムを用い、評価用のウエハWに絶縁膜を成膜し、絶縁膜のエッチング強度について評価した。
[実施例1]
絶縁膜の成膜方法における紫外線照射工程においてN2ガス雰囲気下で主たる波長が172nmの紫外線をドーズ量が2000mJ/cm2となるように照射した例を実施例1-1とした。なおウエハWは、実施の形態に示した塗布液を塗布した後、溶剤揮発工程において、ウエハWを150℃で3分加熱し、その後リフロー工程を行わずに、紫外線照射工程を行った。続くキュア工程においては、熱処理炉内において、水蒸気を供給した状態で、400℃で30分、450℃で120分の2段階の加熱を行った後、N2ガス雰囲気下で450℃で30分加熱した。なお塗布膜の目標膜厚は100nmとした。
[比較例1、2]
また紫外線照射工程において、大気雰囲気にて2000mJ/cm2の紫外線を照射したことを除いて、実施例1-1と同様に処理した例を比較例1とした。また紫外線照射を行わないことを除いて、実施例1-1と同様に処理した例を比較例2とした。
比較例1、2における相対的エッチングレートは、夫々3.74、5.55であった。これに対して、実施例1における相対的エッチングレートは、2.04であった。
この結果によれば、ポリシラザンを含む塗布液をウエハWに塗布し絶縁膜を成膜するにあたって、キュア工程前の塗布膜にN2ガス雰囲気下で紫外線のエネルギーを照射することにより、エッチング強度を高めることができるといえる。
また紫外線をドーズ量を3000及び4000mJ/cm2に設定した場合において、相対的エッチングレートを評価したところ各々2.70.2.42であり、4000mJ/cm2程度の紫外線のドーズ量においても強度の高い絶縁膜を得ることができた。
またウエハWへの塗布液の塗布と、塗布膜への紫外線照射処理と、を複数回繰り返した後、キュア処理を行うことの効果を検証するため、以下の実施例に従って図17に示した基板処理システムを用い、ウエハWに絶縁膜を成膜し、実施例1と同様に相対的エッチングレートを求め、絶縁膜のエッチング強度について評価した。
[実施例2-1]
評価用のウエハWに1回目の塗布液を塗布した後、溶剤揮発工程において、ウエハWを150℃で3分加熱し、その後リフロー工程を行わずに、実施の形態と同様に紫外線照射工程を行った。紫外線照射工程においてN2ガス雰囲気下で照射する波長172nmの紫外線のドーズ量を4000mJ/cm2に設定した。さらに2回目の塗布液の塗布として、1回目の塗布液と同量の塗布液を塗布した後、溶剤揮発工程において、ウエハWを150℃で3分加熱し、その後リフロー工程を行わずに、実施の形態と同様に紫外線照射工程を行った。その後実施例1と同様のキュア工程を行った例を実施例2-1とした。なお1回目の塗布液を塗布及び2回目の塗布液の塗布における塗布液の供給量は、凡そ実施例1と同様であり、キュア処理後の塗布膜の目標膜厚は200nmとした。
塗布液の塗布量を実施例1の凡そ2倍の量として、塗布膜の目標膜厚を200nmとして成膜し、紫外線照射工程においてN2ガス雰囲気下で照射する波長172nmの紫外線のドーズ量を4000mJ/cm2に設定したことを除いて、実施例1と同様に処理した例を実施例2-2とした。
実施例2-1及び2-2における相対的エッチングレートは、夫々2.27、2.56であった。実施例2-1及び2-2のいずれにおいても相対的エッチングレートが低くなっており、エッチング強度が高いことが分かる。また実施例2-2と比較して、実施例2-1はさらに相対的エッチングレートが低くなっていることが分かる。
この結果によれば、ウエハWへの塗布液の塗布と、塗布膜への紫外線照射処理と、を複数回繰り返すことにより、より緻密で良好な絶縁膜を得ることができると言える。
また溶剤揮発工程におけるウエハWの加熱温度による効果を検証するため、以下の実施例に従って図17に示した基板処理システムを用い、ウエハWに絶縁膜を成膜し、絶縁膜のエッチング強度について評価した。
[実施例3-1]
ウエハWは、実施の形態に示した塗布液を塗布した後、溶剤揮発工程において、ウエハWを150℃で3分加熱し、その後リフロー工程を行わずに、紫外線照射工程を行った。続くキュア工程においては、熱処理炉内において、水蒸気を供給した状態で、400℃で30分、450℃で120分の2段階の加熱を行った後、N2ガス雰囲気下で450℃で30分加熱した。なお塗布膜の目標膜厚は100nmとした。
[実施例3-2、3-3]
溶剤揮発工程におけるウエハWの加熱温度を200℃、250℃に設定したことを除いて実施例3-1と同様に処理した例を、夫々実施例3-2~3-3とした。
3 溶媒揮発モジュール
4 リフローモジュール
5 紫外線照射モジュール
6 キュアモジュール
9、90、92 制御部
99 上位コンピュータ
100 シリコン膜
101 塗布膜
W ウエハ
Claims (16)
- 酸化シリコンを含む絶縁膜を形成するための前駆体を溶媒に溶解させた塗布液を基板に塗布して塗布膜を形成する工程と、
前記塗布膜中の溶媒を揮発させる溶媒揮発工程と、
この工程の後、前記前駆体を構成する分子団に未結合手を生成するために、大気よりも酸素濃度が低い低酸素雰囲気で前記塗布膜にエネルギーを供給するエネルギー供給工程と、
その後、前記基板を加熱し、前記前駆体を架橋させて絶縁膜を形成するキュア工程と、を含むことを特徴とする絶縁膜の成膜方法。 - 前記溶媒を揮発させる工程の後、塗布膜中の分子団を再配列するために基板を加熱するリフロー工程を行うことを特徴とする請求項1に記載の絶縁膜の成膜方法。
- 前記エネルギー供給工程は、前記リフロー工程の後、基板の温度を降温させた状態で行われることを特徴とする請求項2記載の絶縁膜の成膜方法。
- 前記エネルギー供給工程が行われる低酸素雰囲気は、酸素濃度が400ppm以下であることを特徴とする請求項1に記載の絶縁膜の成膜方法。
- 前記低酸素雰囲気は、不活性ガスを含む雰囲気であることを特徴とする請求項1に記載の絶縁膜の成膜方法。
- 前記エネルギーは、主たる波長が200nmよりも短い紫外線のエネルギーであることを特徴とする請求項1に記載の絶縁膜の成膜方法。
- 前記塗布膜に供給される紫外線のエネルギーは、5000mJ/cm2以下のエネルギーであることを特徴とする請求項6に記載の絶縁膜の成膜方法。
- 前記塗布膜を形成する工程から前記エネルギーを供給する工程までの工程群を複数回繰り返し、その後前記キュア工程を行うことを特徴とする請求項1の絶縁膜の成膜方法。
- 前記キュア工程は、基板を水蒸気雰囲気下で加熱することを特徴とする請求項1に記載の絶縁膜の成膜方法。
- 前記キュア工程における基板の加熱温度は300℃以上450℃以下であることを特徴とする請求項1に記載の絶縁膜の成膜方法。
- 酸化シリコンを含む絶縁膜を形成するための前駆体を溶媒に溶解させた塗布液を基板に塗布して塗布膜を形成するための塗布モジュールと、
前記塗布膜中の溶媒を揮発させるための溶媒揮発モジュールと、
前記前駆体を活性化させるために、溶媒が揮発された塗布膜に対して、大気よりも酸素濃度が低い低酸素雰囲気でエネルギーを供給するためのエネルギー供給モジュールと、
前記エネルギー供給モジュールにて処理された後の基板を加熱し、前記前駆体を架橋させて絶縁膜を形成するためのキュアモジュールと、
各モジュールの間で基板を搬送するための基板搬送機構と、を備えたことを特徴とする絶縁膜の成膜装置。 - 前記溶媒揮発モジュールは、基板を加熱する溶媒加熱用の加熱モジュールであることを特徴とする請求項11に記載の絶縁膜の成膜装置。
- 溶媒が揮発された塗布膜中の分子団を再配列するために基板を加熱するリフロー用の加熱モジュールを備えていることを特徴とする請求項11に記載の絶縁膜の成膜装置。
- 前記エネルギー供給モジュールは、主たる波長が200nmよりも短い紫外線を塗布膜に照射するためのモジュールであることを特徴とする請求項11に記載の絶縁膜の成膜装置。
- 前記キュアモジュールは、基板に水蒸気を供給して加熱することを特徴とする請求項11に記載の絶縁膜の成膜装置。
- 基板を搬送容器に入れて搬入出するための搬入出ポートと、酸化シリコンを含む絶縁膜を形成するための前駆体を溶媒に溶解させた塗布液を基板に塗布して塗布膜を形成するための塗布モジュールと、前記塗布膜中の溶媒を揮発させるための溶媒揮発モジュールと、前記前駆体を活性化させるために、溶媒が揮発された塗布膜に対して、大気よりも酸素濃度が低い低酸素雰囲気でエネルギーを供給するためのエネルギー供給モジュールと、各モジュール及び前記搬入出ポートの間で基板を搬送するための基板搬送機構と、を備えた基板処理装置と、
前記エネルギー供給モジュールにて処理された後の基板を加熱し、前記前駆体を架橋させて絶縁膜を形成するためのキュア装置と、
前記基板処理装置の前記搬入出ポートと前記キュア装置との間で前記搬送容器を搬送するための容器搬送機構と、を備えたことを特徴とする基板処理システム。
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