JP2020014007A - ケイ素含有膜の堆積のための組成物及びそれを使用した方法 - Google Patents
ケイ素含有膜の堆積のための組成物及びそれを使用した方法 Download PDFInfo
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- JP2020014007A JP2020014007A JP2019164049A JP2019164049A JP2020014007A JP 2020014007 A JP2020014007 A JP 2020014007A JP 2019164049 A JP2019164049 A JP 2019164049A JP 2019164049 A JP2019164049 A JP 2019164049A JP 2020014007 A JP2020014007 A JP 2020014007A
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Abstract
Description
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
からなる群より選択される少なくとも1つの化合物を含む。1つの特定の実施形態において、組成物はシロキサン化合物を含む。別の特定の実施形態において、組成物は、トリシリルアミン系化合物を含む。更なる実施形態において、組成物はオルガノアミノジシランを含む。また更なる実施形態において、組成物は、シクロシラザン化合物を含む。
反応器中に、表面特徴を含む基材を設置する工程であって、基材が、約−20℃〜約400℃の範囲の1つ又は複数の温度で維持され、反応器の圧力が、100torr以下で維持される工程と、
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
からなる群より選択される少なくとも1つの化合物と、窒素源とを反応器中に導入する工程であって、少なくとも1つの化合物がその窒素源と反応して、表面特徴の少なくとも一部に窒化ケイ素含有膜を形成する、工程と、
約20〜約1000℃の範囲の1つ又は複数の温度で、酸素源を用いて基材を処理して、表面特徴の少なくとも一部に酸化ケイ素膜を形成する工程と
を含む、ケイ素含有膜を堆積するための方法が提供される。
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
からなる群より選択される少なくとも1つの化合物を含む。
−20℃〜約400℃の範囲の温度で維持された反応器中に、表面特徴を有する基材を設置する工程と、
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
からなる群より選択される少なくとも1つの化合物と、窒素源とを反応器中に導入する工程であって、少なくとも1つの化合物がその窒素源と反応して、表面特徴の少なくとも一部に窒化ケイ素含有膜を形成する、工程と、
約100〜約1000℃の範囲の1つ又は複数の温度で、酸素源を用いて基材を処理して、表面特徴の少なくとも一部に酸化ケイ素膜を形成し、酸化ケイ素膜を提供する工程と、を含む。代替的に、膜は酸素源にさらされることがあり、約100〜約1000℃の範囲の温度でUV照射にさらされることがある。プロセスの工程は、表面特徴が高品質の酸化ケイ素膜で充填されるまで繰り返すことができる。
−20℃〜約400℃の範囲の温度に加熱され、100torr以下の圧力で維持された反応器中に、表面特徴を含む1つ又は複数の基材を設置する工程と、
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
からなる群より選択される少なくとも1つの化合物を導入する工程と、
反応器中に酸素源を提供して、少なくとも1つの化合物と反応させて、膜を形成し、表面特徴の少なくとも一部を被覆する工程と、
約100℃〜1000℃、好ましくは100℃〜400℃の1つ又は複数の温度で膜をアニールし、ケイ素含有膜が基材表面の少なくとも一部をコーティングすることができる工程と、を含む。この実施形態の酸素源は、水蒸気、水プラズマ、オゾン、酸素、酸素プラズマ、酸素/ヘリウムプラズマ、酸素/アルゴンプラズマ、窒素酸化物プラズマ、二酸化炭素プラズマ、過酸化水素、有機過酸化物、及びそれらの混合物からなる群より選択される。プロセスは、表面特徴がケイ素含有膜で充填されるまで繰り返すことができる。この実施形態において、水蒸気が酸素源として用いられる場合は、基材の温度は、好ましくは−20〜40℃、最も好ましくは−10〜25℃である。
−20℃〜約400℃の範囲の温度に加熱され、100torr以下の圧力で維持された反応器中に、表面特徴を含む1つ又は複数の基材を設置する工程と、
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
からなる群より選択される少なくとも1つの化合物を導入する工程と、
反応器中にプラズマ源を提供して、化合物と反応させて、表面特徴の少なくとも一部にコーティングを形成する工程と、
約100℃〜1000℃、又は約100℃〜400℃の1つ又は複数の温度でコーティングをアニールし、表面特徴の少なくとも一部にケイ素含有膜を形成する工程と、を含む。この実施形態のためのプラズマは、窒素プラズマ、窒素/ヘリウムプラズマ、窒素/アルゴンプラズマ、アンモニアプラズマ、アンモニア/ヘリウムプラズマ、アンモニア/アルゴンプラズマ、ヘリウムプラズマ、アルゴンプラズマ、水素プラズマ、水素/ヘリウムプラズマ、窒素/水素プラズマ、水素/アルゴンプラズマ、有機アミンプラズマ、及びそれらの混合物からなる群より選択される。流動性プラズマCVDについては、プロセスは、ビア又はトレンチが1つ又は複数の緻密化膜で充填されるまで、複数回繰り返すことができる。
流動性化学気相堆積(CVD)膜を中抵抗値(8〜12Ωcm)の単結晶シリコンウエハ基材上及びAlパターンウエハ上に堆積した。
幾つかの酸化ケイ素膜を、前駆体としてビス(ジシリルアミノ)シランを使用して、8インチのケイ素基材及びパターン化基材(例えば、表面特徴を有する)上に堆積して、相対流動性、膜密度、及び膜のウェットエッチ速度を比較した。
幾つかの炭窒化ケイ素膜を、前駆体として1,1,3,3,5,5−ヘキサメチルシクロトリシラザンを使用して、8インチのケイ素基材及びパターン化基材上に堆積して、流動性を比較した。
Claims (16)
- 流動性化学気相堆積を使用して、表面特徴を含む基材の少なくとも表面上にケイ素含有膜を堆積するための組成物であって、
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
を含む、組成物。 - 前記少なくとも1つの化合物がシロキサン化合物を含む、請求項1に記載の組成物。
- 前記少なくとも1つの化合物がトリシリルアミン系化合物を含む、請求項1に記載の組成物。
- 前記少なくとも1つの化合物がオルガノアミノジシラン化合物を含む、請求項1に記載の組成物。
- 前記少なくとも1つの化合物がシクロシラザン化合物を含む、請求項1に記載の化合物。
- エーテル、3級アミン、アルキル炭化水素、芳香族炭化水素、及び3級アミノエーテルからなる群より選択される少なくとも1つの溶媒をさらに含む、請求項1に記載の組成物。
- オクタン、エチルシクロヘキサン、シクロオクタン、及びトルエンからなる群より選択される少なくとも1つの溶媒をさらに含む、請求項1に記載の組成物。
- 流動性化学気相堆積を使用して、酸化ケイ素膜を堆積するための方法であって、
表面特徴を含む基材を反応器中に設置する工程であって、前記基材が、約−20〜約400℃の範囲の1つ又は複数の温度で維持され、前記反応器の圧力が100torr以下で維持される工程と、
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
からなる群より選択される少なくとも1つの化合物を導入する工程であって、前記少なくとも1つの化合物が、前記表面特徴の少なくとも一部を被覆するオリゴマーポリシラザン種を形成する、工程と、
約100〜約1000℃の範囲の1つ又は複数の温度で、酸素源を用いて前記オリゴマーポリシラザン種を処理して、前記表面特徴の少なくとも一部に膜を形成する工程と
を含む、方法。 - 請求項8の酸素源が、水(H2O)、酸素(O2)、酸素プラズマ、オゾン(O3)、NO、N2O、一酸化炭素(CO)、二酸化炭素(CO2)、N2Oプラズマ、一酸化炭素(CO)プラズマ、二酸化炭素(CO2)プラズマ、及びそれらの組み合わせからなる群より選択される。
- 堆積プロセスにおいて、酸化ケイ素膜を堆積するための方法であって、
約−20〜約400℃の範囲の1つ又は複数の温度で維持される反応器中に、表面特徴を有する基材を設置する工程と、
(a)以下からなる群より選択されるシロキサン化合物と、
(c)以下の式IIIを有するオルガノアミノジシラン化合物であって、
(d)以下の式IVを有するシクロシラザン化合物であって、
からなる群より選択される少なくとも1つの化合物と、窒素源とを前記反応器中に導入する工程であって、前記少なくとも1つの化合物が前記窒素源と反応して、前記表面特徴の少なくとも一部に窒化物含有膜を形成する、工程と、
約100〜約1000℃の範囲の1つ又は複数の温度で、酸素源を用いて前記基材を処理して、前記表面特徴の少なくとも一部に酸化ケイ素膜を形成して、酸化ケイ素膜を提供する工程と
を含む、方法。 - 前記窒素源が、アンモニア、ヒドラジン、モノアルキルヒドラジン、ジアルキルヒドラジン、窒素、窒素プラズマ、窒素/水素プラズマ、窒素/ヘリウムプラズマ、窒素/アルゴンプラズマ、アンモニアプラズマ、アンモニア/ヘリウムプラズマ、アンモニア/アルゴンプラズマ、アンモニア/窒素プラズマ、NF3、NF3プラズマ、有機アミンプラズマ、及びそれらの混合物からなる群より選択される、請求項10に記載の方法。
- 前記堆積プロセスがプラズマ化学気相堆積であり、前記プラズマがその場で生成される、請求項10に記載の方法。
- 前記堆積プロセスがプラズマ化学気相堆積であり、前記プラズマが遠隔で生成される、請求項10に記載の方法。
- 前記酸素源が、水(H2O)、酸素(O2)、酸素プラズマ、オゾン(O3)、NO、N2O、一酸化炭素(CO)、二酸化炭素(CO2)、N2Oプラズマ、一酸化炭素(CO)プラズマ、二酸化炭素(CO2)プラズマ、及びそれらの組み合わせからなる群より選択される、請求項10に記載の方法。
- 前記酸化ケイ素膜があるウェットエッチ速度を有し、希釈HF中において、前記ウェットエッチ速度が、熱酸化物膜のウェットエッチ速度の2.2倍未満である、請求項10に記載の方法。
- プラズマ、紫外線、赤外線、又はそれらの組み合わせから選択される少なくとも1つで、前記酸化ケイ素膜を処理することをさらに含む、請求項10に記載の方法。
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