TWI799516B - 全氫聚矽氮烷組成物和用於使用其形成氧化物膜之方法 - Google Patents
全氫聚矽氮烷組成物和用於使用其形成氧化物膜之方法 Download PDFInfo
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- TWI799516B TWI799516B TW108105785A TW108105785A TWI799516B TW I799516 B TWI799516 B TW I799516B TW 108105785 A TW108105785 A TW 108105785A TW 108105785 A TW108105785 A TW 108105785A TW I799516 B TWI799516 B TW I799516B
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- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/62—Nitrogen atoms
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Applications Claiming Priority (2)
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US201862633193P | 2018-02-21 | 2018-02-21 | |
US62/633193 | 2018-02-21 |
Publications (2)
Publication Number | Publication Date |
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TW201936795A TW201936795A (zh) | 2019-09-16 |
TWI799516B true TWI799516B (zh) | 2023-04-21 |
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Family Applications (1)
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TW108105785A TWI799516B (zh) | 2018-02-21 | 2019-02-21 | 全氫聚矽氮烷組成物和用於使用其形成氧化物膜之方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US11739220B2 (zh) |
EP (1) | EP3755658A4 (zh) |
JP (1) | JP7033667B2 (zh) |
KR (1) | KR20200119852A (zh) |
CN (1) | CN111902359A (zh) |
SG (1) | SG11202007789UA (zh) |
TW (1) | TWI799516B (zh) |
WO (1) | WO2019165093A1 (zh) |
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TWI793262B (zh) * | 2018-02-21 | 2023-02-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 全氫聚矽氮烷組成物和用於使用其形成氮化物膜之方法 |
KR102591159B1 (ko) * | 2020-05-07 | 2023-10-20 | 메르크 파텐트 게엠베하 | 폴리카보실라잔, 및 이를 포함하는 조성물 및 이를 사용하는 규소-함유 막의 제조방법 |
CN113683818B (zh) * | 2021-08-27 | 2023-07-04 | 上海材料研究所有限公司 | 一种核壳结构改性氮化硼及其制备方法 |
CN115140714A (zh) * | 2022-06-07 | 2022-10-04 | 哈尔滨工业大学 | 一种Si3N4气凝胶及其制备方法 |
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-
2019
- 2019-02-21 TW TW108105785A patent/TWI799516B/zh active
- 2019-02-21 EP EP19757335.5A patent/EP3755658A4/en active Pending
- 2019-02-21 CN CN201980021089.0A patent/CN111902359A/zh active Pending
- 2019-02-21 US US16/971,869 patent/US11739220B2/en active Active
- 2019-02-21 KR KR1020207026121A patent/KR20200119852A/ko not_active Application Discontinuation
- 2019-02-21 WO PCT/US2019/018985 patent/WO2019165093A1/en unknown
- 2019-02-21 JP JP2020543840A patent/JP7033667B2/ja active Active
- 2019-02-21 SG SG11202007789UA patent/SG11202007789UA/en unknown
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Also Published As
Publication number | Publication date |
---|---|
JP2021514544A (ja) | 2021-06-10 |
US20210087406A1 (en) | 2021-03-25 |
US11739220B2 (en) | 2023-08-29 |
KR20200119852A (ko) | 2020-10-20 |
EP3755658A4 (en) | 2022-03-02 |
SG11202007789UA (en) | 2020-09-29 |
JP7033667B2 (ja) | 2022-03-10 |
EP3755658A1 (en) | 2020-12-30 |
TW201936795A (zh) | 2019-09-16 |
CN111902359A (zh) | 2020-11-06 |
WO2019165093A1 (en) | 2019-08-29 |
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