DE69701594T2 - Verfahren zur herstellung von polysilazan - Google Patents

Verfahren zur herstellung von polysilazan

Info

Publication number
DE69701594T2
DE69701594T2 DE69701594T DE69701594T DE69701594T2 DE 69701594 T2 DE69701594 T2 DE 69701594T2 DE 69701594 T DE69701594 T DE 69701594T DE 69701594 T DE69701594 T DE 69701594T DE 69701594 T2 DE69701594 T2 DE 69701594T2
Authority
DE
Germany
Prior art keywords
producing polysilazane
polysilazane
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69701594T
Other languages
English (en)
Other versions
DE69701594D1 (de
Inventor
Hirohiko Nakahara
Osamu Funayama
Takeshi Isoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Tonen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tonen Corp filed Critical Tonen Corp
Application granted granted Critical
Publication of DE69701594D1 publication Critical patent/DE69701594D1/de
Publication of DE69701594T2 publication Critical patent/DE69701594T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/62—Nitrogen atoms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Silicon Polymers (AREA)
DE69701594T 1995-12-28 1997-01-06 Verfahren zur herstellung von polysilazan Expired - Lifetime DE69701594T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34390895 1995-12-28
JP35406795 1995-12-29
PCT/JP1997/000005 WO1997024391A1 (fr) 1995-12-28 1997-01-06 Procede de production de polysilazane

Publications (2)

Publication Number Publication Date
DE69701594D1 DE69701594D1 (de) 2000-05-11
DE69701594T2 true DE69701594T2 (de) 2000-11-02

Family

ID=26577651

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69701594T Expired - Lifetime DE69701594T2 (de) 1995-12-28 1997-01-06 Verfahren zur herstellung von polysilazan

Country Status (5)

Country Link
US (1) US5905130A (de)
EP (1) EP0812871B1 (de)
JP (1) JP4637303B2 (de)
DE (1) DE69701594T2 (de)
WO (1) WO1997024391A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7053005B2 (en) * 2000-05-02 2006-05-30 Samsung Electronics Co., Ltd. Method of forming a silicon oxide layer in a semiconductor manufacturing process
KR100362834B1 (ko) 2000-05-02 2002-11-29 삼성전자 주식회사 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치
US6479405B2 (en) * 2000-10-12 2002-11-12 Samsung Electronics Co., Ltd. Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
KR100364026B1 (ko) * 2001-02-22 2002-12-11 삼성전자 주식회사 층간 절연막 형성방법
US7060637B2 (en) * 2003-05-12 2006-06-13 Micron Technology, Inc. Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials
KR100499171B1 (ko) * 2003-07-21 2005-07-01 삼성전자주식회사 스핀온글래스에 의한 산화실리콘막의 형성방법
US7192891B2 (en) 2003-08-01 2007-03-20 Samsung Electronics, Co., Ltd. Method for forming a silicon oxide layer using spin-on glass
JP4965953B2 (ja) * 2006-09-29 2012-07-04 株式会社東芝 ポリシラザンまたはポリシラザン溶液の取り扱い方法、ポリシラザン溶液、半導体装置の製造方法
JP5160189B2 (ja) 2007-10-26 2013-03-13 ＡｚエレクトロニックマテリアルズＩｐ株式会社 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物
WO2011079020A1 (en) * 2009-12-22 2011-06-30 3M Innovative Properties Company Process for preparing shelf-stable curable polysilazanes, and polysilazanes prepared thereby
US9103046B2 (en) 2010-07-07 2015-08-11 Southwest Research Institute Electrophoretic formation of nanostructured composites
JP5970197B2 (ja) 2012-02-08 2016-08-17 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 無機ポリシラザン樹脂
JP6060460B2 (ja) 2012-11-22 2017-01-18 アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ シリカ質膜の形成方法及び同方法で形成されたシリカ質膜
KR101599952B1 (ko) * 2012-12-31 2016-03-04 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
KR101583232B1 (ko) * 2012-12-31 2016-01-07 제일모직 주식회사 중합체 제조 방법 및 실리카계 절연막 형성용 조성물
WO2015163360A1 (ja) 2014-04-24 2015-10-29 アーゼット・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 共重合ポリシラザン、その製造方法およびそれを含む組成物ならびにそれを用いたシリカ質膜の形成方法
US10647578B2 (en) 2016-12-11 2020-05-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications
JP7033667B2 (ja) 2018-02-21 2022-03-10 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ペルヒドロポリシラザン組成物及びそれを使用する酸化物膜の形成方法
JP6651663B1 (ja) * 2018-03-29 2020-02-19 住友精化株式会社 アミノシラン化合物、前記アミノシラン化合物を含むシリコン含有膜形成用の組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61287930A (ja) * 1985-06-17 1986-12-18 Chisso Corp ポリシラザンの製造方法
JPS62290730A (ja) * 1986-06-10 1987-12-17 Shin Etsu Chem Co Ltd 有機シラザン重合体の製造方法
JPH0363284A (ja) * 1989-08-01 1991-03-19 Mitsui Petrochem Ind Ltd シラザン類の製造方法
JPH07323204A (ja) * 1994-05-30 1995-12-12 Toray Dow Corning Silicone Co Ltd 抑泡剤組成物

Also Published As

Publication number Publication date
EP0812871B1 (de) 2000-04-05
WO1997024391A1 (fr) 1997-07-10
US5905130A (en) 1999-05-18
JP4637303B2 (ja) 2011-02-23
EP0812871A4 (de) 1999-04-21
EP0812871A1 (de) 1997-12-17
DE69701594D1 (de) 2000-05-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TONENGENERAL SEKIYU K.K., TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: CLARIANT INTERNATIONAL LIMITED, MUTTENZ, CH

8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP., SOMERVILLE, N.J

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU