JP5252025B2 - 液浸露光装置、液浸露光方法、及びデバイス製造方法 - Google Patents
液浸露光装置、液浸露光方法、及びデバイス製造方法 Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Description
R=k1・λ/NA … (1)
δ=±k2・λ/NA2 … (2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
図1において、露光装置EXは、マスクMを支持するマスクステージMSTと、基板Pを支持する基板ステージPSTと、マスクステージMSTに支持されているマスクMを露光光ELで照明する照明光学系ILと、露光光ELで照明されたマスクMのパターンの像を基板ステージPSTに支持されている基板Pに投影露光する投影光学系PLと、露光装置EX全体の動作を統括制御する制御装置CONTとを備えている。
に、液体供給機構10による液体供給と液体回収機構(第1液体回収機構)30による液体回収とを同時に行う(ステップSA7)。これにより、第1、第2供給ノズル13、14の供給口より投影領域AR1に対して外側に流れる基板P上の液体1は、第1、第2回収ノズル31、32の回収口より回収される。このように、液体回収機構30は、投影領域AR1を取り囲むように設けられている回収口により基板P上の液体1の回収を行う。
図16は、第1液体除去装置を用いた露光装置の別の実施形態を示す図である。本実施形態においては、Zステージ52に、投影光学系PLを介してその像面側(基板P側)に照射される光を受光する照度ムラセンサ(計測系)138の一部を構成する板部材(上板)138Aが設けられ、更にその近傍に板部材138Aから除去された液体を回収する液体吸収部材142が追加されている。液体吸収部材142はZステージ52に形成された溝部144に配置されている。また、板部材138Aは、ガラス板の表面にクロムなどの遮光性材料を含む薄膜でパターニングし、その中央部にピンホール138Pを設けたものである。また、板部材138Aの上面は撥液性を有している。本実施形態においては、フッ素系化合物などの撥液性を有する材料が板部材138Aの表面にコーティングされている。
図18は、第3液体除去装置を用いた露光装置の別の実施形態を示す模式図である。図18において、フォーカス検出系4は発光部4aと受光部4bとを備えている。本実施形態においては、投影光学系PLの先端部近傍にはフォーカス検出系4の発光部4aから射出された検出光を透過可能な第1光学部材151と、基板P上で反射した検出光を透過可能な第2光学部材152とが設けられている。第1光学部材151及び第2光学部材152は、投影光学系PL先端の光学素子2とは分離した状態で支持されており、第1光学部材151は光学素子2の−X側に配置され、第2光学部材152は光学素子2の+X側に配置されている。第1、第2光学部材151、152は、露光光ELの光路及び基板Pの移動を妨げない位置において液浸領域AR2の液体1に接触可能な位置に設けられている。
過する領域に付着した液体を除去するようにしている。これにより、光学素子2の下面2aのうち少なくとも露光光ELが通過する領域にウォーターマークが形成される不都合を防止することができる。この実施形態において、気体ノズル160及びその付属装置は第3液体除去装置として機能する。
、液体1を前記領域の外側に円滑に移動させることが困難になる可能性がある。そのため、光学素子2の下面2aの中央部(投影領域AR1に対応する領域の中央部)に付着している液体1を、投影領域AR1に対応する領域の外側に出すためにX軸方向に沿って移動することで、その液体1を前記領域の外側へ円滑に移動させることができる。
図22は第4液体除去装置を備える露光装置の実施形態を示す図である。図22において、供給管172の途中には、例えば三方バルブ等の流路切替装置182を介して気体供給管181の一端部が接続されている。一方、気体供給管181の他端部は気体供給部180に接続されている。流路切替装置182は、液体供給部171と供給口174とを接続する流路を開けているとき、気体供給部180と供給口174とを接続する流路を閉じる。一方、流路切替装置182は、液体供給部171と供給口174とを接続する流路を閉じているとき、気体供給部180と供給口174とを接続する流路を開ける。同様に、回収管176の途中には、流路切替装置185を介して気体供給管184の一端部が接続されており、他端部は気体供給部183に接続されている。流路切替装置185は、液体回収部175と回収口178とを接続する流路を開けているとき、気体供給部183と回収口178とを接続する流路を閉じる。一方、流路切替装置185は、液体回収部175と回収口178とを接続する流路を閉じているとき、気体供給部183と回収口178とを接続する流路を開ける。
図23は第3液体除去装置を用いた露光装置の別の実施形態を示す図である。図23において、吹出口161を有する気体ノズル160は液体受け部材190に取り付けられている。液体受け部材190は皿状の部材であって、光学素子2、ノズル173、177、及び第1、第2光学部材151、152の占有面積よりも大きく形成されており、これら各部材から滴り落ちた液体1を受けることができるようになっている。また、液体受け部材190の底部には、多孔質体やスポンジ状部材からなる液体吸収部材199が交換可能に設けられている。液体吸収部材199により液体1を良好に補集・保持することができる。また、液体受け部材190は周壁部191を有しており、補集された液体1の流出は周壁部191によって防止されている。
図24は第3液体除去装置を用いた露光装置の別の実施形態を示す側面図である。図24において、基板ステージPSTは、基板ステージPSTの平面視ほぼ中央部に設けられ、Z軸方向に移動可能なセンターテーブル250を備えている。センターテーブル250は、不図示の駆動機構によりZ軸方向に移動可能であって、基板ステージPST(Zステージ52)の上面より出没可能に設けられている。またセンターテーブル250の上面250Aには吸着孔251が設けられている。吸着孔251は基板ステージPST内部に設けられた流路252の一端部に接続されている。一方、流路252の他端部は流路切替装置253を介して第1流路254の一端部及び第2流路255の一端部のいずれか一方に接続可能となっている。第1流路254の他端部は真空系256に接続され、第2流路255の他端部は気体供給部257に接続されている。流路切替装置253は、流路252と第1流路254とを接続して真空系256と吸着孔251とを接続する流路を開けているとき、気体供給部257と吸着孔251とを接続する流路を閉じる。一方、流路切替装置253は、流路252と第2流路255とを接続して気体供給部257と吸着孔251とを接続する流路を開けているとき、真空系256と吸着孔251とを接続する流路を閉じる。
過率6%のハーフトーン型の位相シフトマスク(ハーフピッチ45nm程度のパターン)を、直線偏光照明法とダイボール照明法とを併用して照明する場合、照明系の瞳面においてダイボールを形成する二光束の外接円で規定される照明σを0.95、その瞳面における各光束の半径を0.125σ、投影光学系PLの開口数をNA=1.2とすると、ランダム偏光光を用いるよりも、焦点深度(DOF)を150nm程度増加させることができる。
またはリアクタンス力を用いた磁気浮上型のどちらを用いてもよい。また、各ステージPST、MSTは、ガイドに沿って移動するタイプでもよく、ガイドを設けないガイドレスタイプであってもよい。
Claims (26)
- 基板上の一部に液浸領域を形成するとともに、前記基板上にパターン像を投影し、前記基板を露光する液浸露光装置であって、
投影光学系と、
前記基板を保持する基板ステージと、
前記基板が対向するように配置され、液体を供給する液体供給口と、
前記基板が対向するように、且つ前記液体供給口を囲むように配置され、前記液体供給口から供給された液体を回収する液体回収口と、
前記基板上のアライメントマークを、液体を介さずに検出する第1アライメント系と、を備え、
前記第1アライメント系の検出結果に基づいて、前記基板の位置合わせを行いつつ、前記基板の液浸露光を行う液浸露光装置。 - 前記投影光学系と液体とを介して取得された前記パターン像の投影位置情報と、前記第1アライメント系の検出結果とに基づいて前記基板の位置合わせを行いつつ前記基板の液浸露光を行う請求項1記載の液浸露光装置。
- 基準マークを有し、前記基板ステージに搭載された基準部材と、
前記パターン像の投影位置情報を取得するために、前記投影光学系と液体とを介して前記基準マークを検出する第2アライメント系とを備える請求項2記載の液浸露光装置。 - 前記基準部材は、前記第1アライメント系により検出される基準マークも有する請求項3記載の液浸露光装置。
- 前記基板ステージに搭載された基準部材を備え、
前記基準部材は、前記第1アライメント系により検出される基準マークを有する請求項1又は2記載の液浸露光装置。 - 前記基板ステージに設けられ、前記基板ステージの溝部を介して回収された液体が流れる流路をさらに備えた請求項1〜5のいずれか一項記載の液浸露光装置。
- 前記溝部は、環状である請求項6記載の液浸露光装置。
- 前記溝部には、多孔部材が配置されている請求項6又は7記載の液浸露光装置。
- 前記基板ステージは、前記基板ステージの基板ホルダに保持された基板を囲むように配置された平坦面を有し、
前記平坦面は、前記基板ホルダに保持された前記基板の表面とほぼ同じ高さである請求項1〜8のいずれか一項記載の液浸露光装置。 - 前記基板ステージは、前記基板ステージの基板ホルダに保持された基板を囲むように配置された平坦面を有し、
前記平坦面により、前記基板ホルダに保持された前記基板の周縁を露光する場合にも前記投影光学系の下に液体が保持される請求項1〜8のいずれか一項記載の液浸露光装置。 - 前記基板ステージは、前記平坦面を有し、前記基板ステージの基板ホルダに保持された基板を囲むように配置されたプレート部を有する請求項9又は10記載の液浸露光装置。
- 前記基板ステージに保持された前記基板の表面情報を取得するためのフォーカス検出系をさらに備え、
前記フォーカス検出系は、前記基板ステージを移動しながら、前記基板の表面情報を、液体を介さずに検出する請求項1〜11のいずれか一項記載の液浸露光装置。 - 計測部材と、受光系を有する計測系をさらに備え、
前記投影光学系と前記計測部材との間の液体、及び前記計測部材に設けられた光透過部を介して、前記投影光学系からの光が前記受光系に入射し、
前記計測部材は、前記基板ステージに設けられ、
前記計測部材は、撥液性の上面を有する請求項1〜12の記載の液浸露光装置。 - 前記計測部材は、撥液性材料のコーティングを含む請求項13記載の液浸露光装置。
- 請求項1〜14のいずれか一項記載の液浸露光装置を用いて基板を露光することを含むデバイス製造方法。
- 基板上の一部に液浸領域を形成し、前記基板を露光する液浸露光方法であって、
基板ステージに基板を保持することと、
前記基板上に投影光学系を介してパターン像を投影することと、
前記基板が対向するように配置された液体供給口から液体を供給することと、
前記基板が対向するように、且つ前記液体供給口を囲むように配置された液体回収口を介して、前記液体供給口から供給された液体を回収することと、
前記基板上のアライメントマークを、液体を介さずに検出する検出することと、
前記検出の結果に基づいて、前記基板の位置合わせを行いつつ、前記基板の液浸露光を行うことと、を含む液浸露光方法。 - 前記基板ステージに設けられた基準部材の基準マークを、液体を介さずに第1アライメント系で検出することをさらに含み、
前記基板上のアライメントマークの検出は、液体を介さずに、前記第1アライメント系を使って行われる請求項16記載の液浸露光方法。 - 前記投影光学系と液体とを介して前記パターン像の投影位置情報を取得することをさらに含み、
前記検出の結果と前記投影位置情報とに基づいて前記基板の位置合わせを行いつつ前記基板の液浸露光を行う請求項17記載の液浸露光方法。 - 前記パターン像の投影位置情報の取得は、前記基板ステージに設けられた基準部材の基準マークを、第2アライメント系により前記投影光学系と液体とを介して検出することを含む請求項18記載の液浸露光方法。
- 前記基板ステージを移動しながら、液体を介さずに、前記基板ステージに保持された前記基板の表面情報を検出することをさらに含む請求項16〜19のいずれか一項記載の液浸露光方法。
- 前記基板ステージの溝部に流入した液体を、前記基板ステージに設けられた流路を介して回収することをさらに含む請求項16〜20のいずれか一項記載の液浸露光方法。
- 前記溝部は、環状である請求項21記載の液浸露光方法。
- 前記溝部には、多孔部材が配置されている請求項21又は22記載の液浸露光方法。
- 前記基板ステージは、前記基板ステージの基板ホルダに保持された基板を囲むように配置された平坦面を有し、
前記平坦面は、前記基板ホルダに保持された前記基板の表面とほぼ同じ高さである請求項16〜23のいずれか一項記載の液浸露光方法。 - 前記基板ステージは、前記基板ステージの基板ホルダに保持された基板を囲むように配置された平坦面を有し、
前記基板の周縁を露光する場合にも、前記平坦面により前記投影光学系の下に液体が保持される請求項16〜23のいずれか一項記載の液浸露光方法。 - 前記基板ステージは、前記基板ステージの基板ホルダに保持された基板を囲むように配置されたプレート部を有し、
前記プレート部が前記平坦面を有する請求項24又は25記載の液浸露光方法。
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