JP4908736B2 - 硬化性オルガノポリシロキサン組成物および半導体装置 - Google Patents

硬化性オルガノポリシロキサン組成物および半導体装置 Download PDF

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Publication number
JP4908736B2
JP4908736B2 JP2003343622A JP2003343622A JP4908736B2 JP 4908736 B2 JP4908736 B2 JP 4908736B2 JP 2003343622 A JP2003343622 A JP 2003343622A JP 2003343622 A JP2003343622 A JP 2003343622A JP 4908736 B2 JP4908736 B2 JP 4908736B2
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Prior art keywords
group
bonded
silicon atom
curable organopolysiloxane
component
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Expired - Lifetime
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JP2003343622A
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English (en)
Japanese (ja)
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JP2005105217A5 (enExample
JP2005105217A (ja
Inventor
好次 森田
匡慶 寺田
博司 江南
智子 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
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Dow Corning Toray Co Ltd
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Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Priority to JP2003343622A priority Critical patent/JP4908736B2/ja
Priority to CNB2004800287078A priority patent/CN100378172C/zh
Priority to EP20040773343 priority patent/EP1670863B1/en
Priority to AT04773343T priority patent/ATE463537T1/de
Priority to KR1020147036448A priority patent/KR20150006490A/ko
Priority to DE602004026456T priority patent/DE602004026456D1/de
Priority to KR1020147009113A priority patent/KR101699383B1/ko
Priority to PCT/JP2004/013724 priority patent/WO2005033207A1/en
Priority to US10/573,505 priority patent/US7527871B2/en
Priority to KR1020067006400A priority patent/KR101499709B1/ko
Priority to TW93128364A priority patent/TWI341857B/zh
Publication of JP2005105217A publication Critical patent/JP2005105217A/ja
Publication of JP2005105217A5 publication Critical patent/JP2005105217A5/ja
Publication of JP4908736B2 publication Critical patent/JP4908736B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Silicon Polymers (AREA)
JP2003343622A 2003-10-01 2003-10-01 硬化性オルガノポリシロキサン組成物および半導体装置 Expired - Lifetime JP4908736B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2003343622A JP4908736B2 (ja) 2003-10-01 2003-10-01 硬化性オルガノポリシロキサン組成物および半導体装置
KR1020147009113A KR101699383B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
US10/573,505 US7527871B2 (en) 2003-10-01 2004-09-14 Curable organopolysiloxane composition and semiconductor device
AT04773343T ATE463537T1 (de) 2003-10-01 2004-09-14 Härtbare organopolysiloxanzusammensetzung und halbleitervorrichtung
KR1020147036448A KR20150006490A (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
DE602004026456T DE602004026456D1 (de) 2003-10-01 2004-09-14 Härtbare organopolysiloxanzusammensetzung und halbleitervorrichtung
CNB2004800287078A CN100378172C (zh) 2003-10-01 2004-09-14 可固化的有机聚硅氧烷组合物和半导体器件
PCT/JP2004/013724 WO2005033207A1 (en) 2003-10-01 2004-09-14 Curable organopolysiloxane composition and semiconductor device
EP20040773343 EP1670863B1 (en) 2003-10-01 2004-09-14 Curable organopolysiloxane composition and semiconductor device
KR1020067006400A KR101499709B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
TW93128364A TWI341857B (en) 2003-10-01 2004-09-20 Curable organopolysiloxane composition and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003343622A JP4908736B2 (ja) 2003-10-01 2003-10-01 硬化性オルガノポリシロキサン組成物および半導体装置

Publications (3)

Publication Number Publication Date
JP2005105217A JP2005105217A (ja) 2005-04-21
JP2005105217A5 JP2005105217A5 (enExample) 2006-10-19
JP4908736B2 true JP4908736B2 (ja) 2012-04-04

Family

ID=34419307

Family Applications (1)

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JP2003343622A Expired - Lifetime JP4908736B2 (ja) 2003-10-01 2003-10-01 硬化性オルガノポリシロキサン組成物および半導体装置

Country Status (9)

Country Link
US (1) US7527871B2 (enExample)
EP (1) EP1670863B1 (enExample)
JP (1) JP4908736B2 (enExample)
KR (3) KR101699383B1 (enExample)
CN (1) CN100378172C (enExample)
AT (1) ATE463537T1 (enExample)
DE (1) DE602004026456D1 (enExample)
TW (1) TWI341857B (enExample)
WO (1) WO2005033207A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3222689A1 (en) 2016-03-22 2017-09-27 Shin-Etsu Chemical Co., Ltd. Uv curable silicone composition, cured product thereof, optical element encapsulation material comprised of the composition, and optical element encapsulated by the encapsulation material

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