KR101699383B1 - 경화성 오가노폴리실록산 조성물 및 반도체 장치 - Google Patents

경화성 오가노폴리실록산 조성물 및 반도체 장치 Download PDF

Info

Publication number
KR101699383B1
KR101699383B1 KR1020147009113A KR20147009113A KR101699383B1 KR 101699383 B1 KR101699383 B1 KR 101699383B1 KR 1020147009113 A KR1020147009113 A KR 1020147009113A KR 20147009113 A KR20147009113 A KR 20147009113A KR 101699383 B1 KR101699383 B1 KR 101699383B1
Authority
KR
South Korea
Prior art keywords
silicon
bonded
component
group
cured product
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020147009113A
Other languages
English (en)
Korean (ko)
Other versions
KR20140064931A (ko
Inventor
요시쓰구 모리타
마사요시 데라다
히로지 에나미
도모코 가토
Original Assignee
다우 코닝 도레이 캄파니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34419307&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101699383(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 다우 코닝 도레이 캄파니 리미티드 filed Critical 다우 코닝 도레이 캄파니 리미티드
Publication of KR20140064931A publication Critical patent/KR20140064931A/ko
Application granted granted Critical
Publication of KR101699383B1 publication Critical patent/KR101699383B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Silicon Polymers (AREA)
KR1020147009113A 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치 Expired - Lifetime KR101699383B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003343622A JP4908736B2 (ja) 2003-10-01 2003-10-01 硬化性オルガノポリシロキサン組成物および半導体装置
JPJP-P-2003-343622 2003-10-01
PCT/JP2004/013724 WO2005033207A1 (en) 2003-10-01 2004-09-14 Curable organopolysiloxane composition and semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067006400A Division KR101499709B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치

Publications (2)

Publication Number Publication Date
KR20140064931A KR20140064931A (ko) 2014-05-28
KR101699383B1 true KR101699383B1 (ko) 2017-01-24

Family

ID=34419307

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020067006400A Expired - Fee Related KR101499709B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
KR1020147036448A Ceased KR20150006490A (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
KR1020147009113A Expired - Lifetime KR101699383B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치

Family Applications Before (2)

Application Number Title Priority Date Filing Date
KR1020067006400A Expired - Fee Related KR101499709B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
KR1020147036448A Ceased KR20150006490A (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치

Country Status (9)

Country Link
US (1) US7527871B2 (enExample)
EP (1) EP1670863B1 (enExample)
JP (1) JP4908736B2 (enExample)
KR (3) KR101499709B1 (enExample)
CN (1) CN100378172C (enExample)
AT (1) ATE463537T1 (enExample)
DE (1) DE602004026456D1 (enExample)
TW (1) TWI341857B (enExample)
WO (1) WO2005033207A1 (enExample)

Families Citing this family (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7314770B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7192795B2 (en) * 2004-11-18 2007-03-20 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
WO2006127100A1 (en) * 2005-05-26 2006-11-30 Dow Corning Corporation Process and silicone encapsulant composition for molding small shapes
JP5247979B2 (ja) * 2005-06-01 2013-07-24 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 透明な硬化物を与えるポリオルガノシロキサン組成物
JP5392805B2 (ja) * 2005-06-28 2014-01-22 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン樹脂組成物および光学部材
EP1749861B1 (en) * 2005-08-03 2014-08-20 Shin-Etsu Chemical Co., Ltd. Addition curable silicone resin composition for light emitting diode
JP2007063538A (ja) * 2005-08-03 2007-03-15 Shin Etsu Chem Co Ltd 発光ダイオード用付加硬化型シリコーン樹脂組成物
US8187726B2 (en) * 2005-08-09 2012-05-29 Sony Corporation Nanoparticle-resin composite material, light emitting device assembly, and filling material for the light-emitting device assembly
US20070092737A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US20070092736A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
WO2007050484A1 (en) * 2005-10-24 2007-05-03 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
US7595515B2 (en) * 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
US7985476B2 (en) 2005-10-28 2011-07-26 Sumitomo Osaka Cement Co., Ltd. Transparent zirconia dispersion and zirconia particle-containing resin composition, composition for sealing light emitting element and light emitting element, hard coat film and optical functional film and optical component, and method for producing zirconia particle-containing resin
WO2007086987A1 (en) * 2006-01-17 2007-08-02 Dow Corning Corporation Thermally stable transparent silicone resin compositions and methods for their preparation and use
EP1979774A1 (en) * 2006-02-01 2008-10-15 Dow Corning Corporation Impact resistant optical waveguide and method of manufacture thereof
US8258502B2 (en) * 2006-02-24 2012-09-04 Dow Corning Corporation Light emitting device encapsulated with silicones and curable silicone compositions for preparing the silicones
JP5060074B2 (ja) 2006-05-11 2012-10-31 東レ・ダウコーニング株式会社 接着促進剤、硬化性オルガノポリシロキサン組成物、および半導体装置
US20070269586A1 (en) * 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
US7655486B2 (en) * 2006-05-17 2010-02-02 3M Innovative Properties Company Method of making light emitting device with multilayer silicon-containing encapsulant
JP5202822B2 (ja) * 2006-06-23 2013-06-05 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
US8092735B2 (en) 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
JP5148088B2 (ja) * 2006-08-25 2013-02-20 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
KR101397616B1 (ko) 2006-08-28 2014-05-26 다우 코닝 코포레이션 광학 장치들과 실리콘 조성물들 및 광학 장치들을 제조하는공정들
TWI361205B (en) 2006-10-16 2012-04-01 Rohm & Haas Heat stable aryl polysiloxane compositions
KR20090115803A (ko) * 2007-02-13 2009-11-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 렌즈를 갖는 ｌｅｄ 소자 및 그 제조 방법
US9944031B2 (en) * 2007-02-13 2018-04-17 3M Innovative Properties Company Molded optical articles and methods of making same
TWI434890B (zh) * 2007-04-06 2014-04-21 Shinetsu Chemical Co 加成可硬化聚矽氧樹脂組成物及使用彼之聚矽氧鏡片
US7960192B2 (en) * 2007-09-14 2011-06-14 3M Innovative Properties Company Light emitting device having silicon-containing composition and method of making same
JP2011517327A (ja) * 2008-03-04 2011-06-02 ダウ・コーニング・コーポレイション シリコーン組成物、シリコーン接着剤、被覆基材及び積層基材
JP5972512B2 (ja) * 2008-06-18 2016-08-17 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物及び半導体装置
JP2010013503A (ja) * 2008-07-01 2010-01-21 Showa Highpolymer Co Ltd 硬化性樹脂組成物およびオプトデバイス
JP5469874B2 (ja) 2008-09-05 2014-04-16 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
US8946353B2 (en) 2008-10-31 2015-02-03 Dow Corning Toray Co. Ltd. Curable organopolysiloxane composition, optical semiconductor element sealant, and optical semiconductor device
JP4862032B2 (ja) * 2008-12-05 2012-01-25 信越化学工業株式会社 高屈折率を有する硬化物を与える付加硬化型シリコーン組成物、及び該組成物からなる光学素子封止材
JP5526823B2 (ja) 2009-02-24 2014-06-18 信越化学工業株式会社 シリコーン樹脂で封止された光半導体装置
EP2435516B1 (en) 2009-05-29 2017-03-22 Dow Corning Corporation Silicone composition for producing transparent silicone materials and optical devices
KR101030019B1 (ko) 2009-12-31 2011-04-20 제일모직주식회사 봉지재용 투광성 수지 및 이를 포함하는 전자 소자
EP2530122B1 (en) * 2010-01-25 2015-11-11 LG Chem, Ltd. Curable composition
WO2011090362A2 (ko) * 2010-01-25 2011-07-28 (주)Lg화학 실리콘 수지
US9299896B2 (en) 2010-01-25 2016-03-29 Lg Chem, Ltd. Curable composition
US9410018B2 (en) 2010-01-25 2016-08-09 Lg Chem, Ltd. Curable composition
EP2530123B1 (en) * 2010-01-25 2015-11-11 LG Chem, Ltd. Curable composition
WO2011125463A1 (ja) * 2010-03-31 2011-10-13 積水化学工業株式会社 光半導体装置用封止剤及び光半導体装置
JP5377401B2 (ja) * 2010-04-20 2013-12-25 信越化学工業株式会社 硬化性オルガノポリシロキサン組成物
JP2012007136A (ja) * 2010-05-21 2012-01-12 Sekisui Chem Co Ltd 光半導体装置用封止剤及びそれを用いた光半導体装置
JP5368379B2 (ja) * 2010-06-07 2013-12-18 信越化学工業株式会社 硬化性オルガノポリシロキサン組成物及びそれを用いた半導体装置
JP5640476B2 (ja) * 2010-06-08 2014-12-17 信越化学工業株式会社 光半導体素子封止用樹脂組成物及び発光装置
US8519429B2 (en) * 2010-06-24 2013-08-27 Sekisui Chemical Co., Ltd. Encapsulant for optical semiconductor device and optical semiconductor device using same
WO2012014560A1 (ja) * 2010-07-27 2012-02-02 株式会社Adeka 半導体封止用硬化性組成物
TWI483995B (zh) 2010-08-18 2015-05-11 第一毛織股份有限公司 聚有機矽氧烷與由該聚有機矽氧烷獲得之封裝材料以及包含該封裝材料之電子元件
JP5167419B2 (ja) * 2010-10-19 2013-03-21 積水化学工業株式会社 光半導体装置用封止剤及びそれを用いた光半導体装置
JP2012097225A (ja) * 2010-11-04 2012-05-24 Daicel Corp 硬化性樹脂組成物及び硬化物
JP2012111875A (ja) * 2010-11-25 2012-06-14 Daicel Corp 硬化性樹脂組成物及び硬化物
JP5690571B2 (ja) * 2010-12-07 2015-03-25 株式会社ダイセル 硬化性樹脂組成物
JP5323037B2 (ja) * 2010-12-14 2013-10-23 積水化学工業株式会社 光半導体装置用封止剤及びそれを用いた光半導体装置
US8895662B2 (en) 2010-12-31 2014-11-25 Eternal Chemical Co., Ltd. Curable composition and method for manufacturing the same
TWI435914B (zh) 2010-12-31 2014-05-01 Eternal Chemical Co Ltd 可固化之有機聚矽氧烷組合物及其製法
US9045639B2 (en) 2010-12-31 2015-06-02 Eternal Materials Co., Ltd. Curable composition and method for manufacturing the same
KR20120078606A (ko) * 2010-12-31 2012-07-10 제일모직주식회사 봉지재 및 상기 봉지재를 포함하는 전자 소자
WO2012093909A2 (ko) * 2011-01-06 2012-07-12 주식회사 엘지화학 경화성 조성물
JP5348147B2 (ja) * 2011-01-11 2013-11-20 信越化学工業株式会社 仮接着材組成物、及び薄型ウエハの製造方法
DE102011004789A1 (de) * 2011-02-25 2012-08-30 Wacker Chemie Ag Selbsthaftende, zu Elastomeren vernetzbare Siliconzusammensetzungen
JP5522111B2 (ja) 2011-04-08 2014-06-18 信越化学工業株式会社 シリコーン樹脂組成物及び当該組成物を使用した光半導体装置
CN103649227B (zh) * 2011-05-04 2016-02-24 Lg化学株式会社 可固化组合物
JP5760664B2 (ja) * 2011-05-10 2015-08-12 三菱化学株式会社 シリコーン系封止材組成物及び半導体発光装置
JP5603837B2 (ja) * 2011-06-30 2014-10-08 信越化学工業株式会社 付加硬化型シリコーン組成物及び光学素子
JPWO2013008842A1 (ja) * 2011-07-14 2015-02-23 積水化学工業株式会社 光半導体装置用封止剤及び光半導体装置
KR101136888B1 (ko) * 2011-07-27 2012-04-20 (주)에버텍엔터프라이즈 발광 다이오드용 폴리유기실리콘 조성물
JP5844371B2 (ja) * 2011-08-10 2016-01-13 株式会社Adeka ケイ素含有硬化性組成物及びその硬化物
JP5893874B2 (ja) * 2011-09-02 2016-03-23 信越化学工業株式会社 光半導体装置
JP5937798B2 (ja) * 2011-09-07 2016-06-22 株式会社ダイセル ラダー型シルセスキオキサン及びその製造方法、並びに、硬化性樹脂組成物及びその硬化物
KR101460863B1 (ko) * 2011-11-25 2014-12-04 주식회사 엘지화학 오가노폴리실록산의 제조 방법
KR101453615B1 (ko) 2011-11-25 2014-10-27 주식회사 엘지화학 경화성 조성물
TWI480335B (zh) * 2011-11-25 2015-04-11 Ｌｇ化學股份有限公司 可固化組成物
EP2784126B1 (en) * 2011-11-25 2019-03-13 LG Chem, Ltd. Curable composition
TWI551653B (zh) * 2011-11-25 2016-10-01 Ｌｇ化學股份有限公司 可固化之組成物
KR101493131B1 (ko) * 2011-11-25 2015-02-13 주식회사 엘지화학 오가노폴리실록산
JP5831959B2 (ja) * 2011-11-25 2015-12-16 エルジー・ケム・リミテッド 硬化性組成物
DE102012200335A1 (de) * 2012-01-11 2013-07-11 Wacker Chemie Ag Hitzestabilisierte Siliconmischung
JP5575820B2 (ja) 2012-01-31 2014-08-20 信越化学工業株式会社 硬化性オルガノポリシロキサン組成物、光学素子封止材および光学素子
JP5660145B2 (ja) * 2012-04-03 2015-01-28 Jsr株式会社 硬化性組成物、硬化物および光半導体装置
JP6435260B2 (ja) 2012-05-14 2018-12-05 モーメンティブ・パフォーマンス・マテリアルズ・インク 高屈折率材料
EP2878634B1 (en) 2012-07-27 2017-10-04 LG Chem, Ltd. Curable composition
EP2878633B1 (en) * 2012-07-27 2020-12-30 LG Chem, Ltd. Hardening composition
WO2014017883A1 (ko) * 2012-07-27 2014-01-30 주식회사 엘지화학 경화성 조성물
KR20150054801A (ko) * 2012-09-14 2015-05-20 요코하마 고무 가부시키가이샤 경화성 수지 조성물
JP6192025B2 (ja) * 2012-11-28 2017-09-06 エルジー・ケム・リミテッド 発光ダイオード
JP6006632B2 (ja) 2012-12-18 2016-10-12 信越化学工業株式会社 付加硬化型シリコーン組成物及び光学素子
JP6096087B2 (ja) 2012-12-21 2017-03-15 信越化学工業株式会社 硬化性シリコーン樹脂組成物、その硬化物及び光半導体デバイス
JP5985981B2 (ja) * 2012-12-28 2016-09-06 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP5819866B2 (ja) 2013-01-10 2015-11-24 信越化学工業株式会社 付加硬化型シリコーン組成物、光学素子封止材および光学素子
WO2014163439A1 (ko) * 2013-04-04 2014-10-09 주식회사 엘지화학 경화성 조성물
JP6237880B2 (ja) * 2013-04-04 2017-11-29 エルジー・ケム・リミテッド 硬化性組成物
CN105492539B (zh) * 2013-08-29 2019-05-07 美国陶氏有机硅公司 可固化有机硅组合物、其固化产物及光学半导体器件
CN103525095A (zh) * 2013-09-30 2014-01-22 瑞金市瑞谷科技发展有限公司 一种可固化的有机基聚硅氧烷组合物
CN103724939A (zh) * 2013-12-26 2014-04-16 东莞市广海大橡塑科技有限公司 一种封装二极管
CN106103594B (zh) * 2014-01-27 2019-06-28 陶氏东丽株式会社 有机硅凝胶组合物
CN105829404B (zh) 2014-01-28 2018-10-26 株式会社Lg化学 固化产物
WO2015115811A1 (ko) * 2014-01-28 2015-08-06 주식회사 엘지화학 경화체
TWI624510B (zh) 2014-02-04 2018-05-21 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
TWI653295B (zh) 2014-02-04 2019-03-11 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
KR20150097947A (ko) 2014-02-19 2015-08-27 다우 코닝 코포레이션 반응성 실리콘 조성물, 이로부터 제조되는 핫멜트 재료, 및 경화성 핫멜트 조성물
JP6100717B2 (ja) 2014-03-05 2017-03-22 信越化学工業株式会社 付加硬化型シリコーン組成物及び光学素子
TWI506058B (zh) 2014-03-18 2015-11-01 Benq Materials Corp 可固化矽樹脂組成物
WO2015194159A1 (ja) * 2014-06-20 2015-12-23 東レ・ダウコーニング株式会社 オルガノポリシロキサンおよびその製造方法
JP6325471B2 (ja) 2015-03-02 2018-05-16 株式会社東芝 光結合装置および絶縁装置
US9416273B1 (en) 2015-04-30 2016-08-16 Eternal Materials Co., Ltd. Curable composition and method for manufacturing the same
CN106317895B (zh) * 2015-06-30 2019-09-06 广州慧谷化学有限公司 一种可固化的有机聚硅氧烷组合物及半导体器件
KR101720220B1 (ko) 2015-08-21 2017-03-28 주식회사 케이씨씨 오르가노 폴리실록산 조성물
DE102015225906A1 (de) 2015-12-18 2017-06-22 Wacker Chemie Ag Siloxanharzzusammensetzungen
DE102015225921A1 (de) 2015-12-18 2017-06-22 Wacker Chemie Ag Siloxanharzzusammensetzungen
WO2017126199A1 (ja) * 2016-01-19 2017-07-27 セントラル硝子株式会社 硬化性シリコーン樹脂組成物およびその硬化物、並びにこれらを用いた光半導体装置
JP6481647B2 (ja) 2016-03-22 2019-03-13 信越化学工業株式会社 紫外線硬化性シリコーン組成物、その硬化物、及び該組成物からなる光学素子封止材、並びに該光学素子封止材により封止された光学素子
US11028266B2 (en) 2016-08-12 2021-06-08 Wacker Chemie Ag Curable organopolysiloxane composition, encapsulant and semiconductor device
JP6754317B2 (ja) * 2017-04-27 2020-09-09 信越化学工業株式会社 付加硬化型シリコーン組成物、該組成物の製造方法、シリコーン硬化物、及び光学素子
CN107541075B (zh) * 2017-09-28 2021-07-23 广州慧谷化学有限公司 热熔型有机聚硅氧烷组合物、荧光体片材及半导体器件
WO2019079366A1 (en) * 2017-10-19 2019-04-25 Dow Silicones Corporation PRESSURE-SENSITIVE ADHESIVE COMPOSITION AND METHODS OF PREPARATION AND USE IN FLEXIBLE ORGANIC ELECTROLUMINESCENT DIODE APPLICATIONS
TW201917173A (zh) * 2017-10-20 2019-05-01 日商道康寧東麗股份有限公司 固化性矽組合物以及光半導體裝置
JP7299242B2 (ja) 2018-01-11 2023-06-27 ビーエーエスエフ ソシエタス・ヨーロピア Ｃ２～ｃ３－アルケニル置換リレンイミド色素および硬化型シリコーン樹脂組成物の硬化性生成物およびｃ２～ｃ３－アルケニル置換リレンイミド色素
TWI787444B (zh) * 2018-02-07 2022-12-21 日商陶氏東麗股份有限公司 可固化聚矽氧組成物、其固化產物、及光學半導體裝置
TWI798343B (zh) 2018-03-12 2023-04-11 美商陶氏有機矽公司 可固化聚矽氧組成物及其經固化產物
JP2020007537A (ja) 2018-06-29 2020-01-16 信越化学工業株式会社 硬化性有機ケイ素樹脂組成物及び半導体装置
EP3844231A1 (en) 2018-08-31 2021-07-07 Wacker Chemie AG Curable organopolysiloxane composition, encapsulant, and semiconductor device
TWI844552B (zh) 2018-09-10 2024-06-11 美商陶氏有機矽公司 用於生產光學聚矽氧總成之方法、及藉其生產之光學聚矽氧總成
JP7021046B2 (ja) 2018-10-22 2022-02-16 信越化学工業株式会社 付加硬化型シリコーン組成物、シリコーン硬化物、及び、光学素子
JP7099355B2 (ja) 2019-02-18 2022-07-12 信越化学工業株式会社 熱硬化性シリコーン組成物およびその硬化物
TWI856127B (zh) 2019-08-06 2024-09-21 美商陶氏有機矽公司 雙重固化組成物
JP7556522B2 (ja) * 2020-08-14 2024-09-26 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性シリコーン組成物、封止材、および光半導体装置
TW202428780A (zh) * 2022-12-05 2024-07-16 美商陶氏有機矽公司 Ｕｖ可固化聚矽氧組成物

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996195A (en) * 1974-11-15 1976-12-07 Shinetsu Chemical Company Curable organosilicon compositions
US3944519A (en) * 1975-03-13 1976-03-16 Dow Corning Corporation Curable organopolysiloxane compositions
US4234713A (en) * 1979-05-29 1980-11-18 Dow Corning Corporation Curable solventless organopolysiloxane compositions
HU203712B (en) * 1985-09-02 1991-09-30 Sarkadi Cukorgyar Soil-improving and fertilizer-producing process with composting slams of sugar-mills
US5272013A (en) * 1992-08-21 1993-12-21 General Electric Company Articles made of high refractive index phenol-modified siloxanes
JP3574226B2 (ja) 1994-10-28 2004-10-06 東レ・ダウコーニング・シリコーン株式会社 硬化性シリコーン組成物およびその硬化物
JP3618446B2 (ja) * 1995-10-18 2005-02-09 東レ・ダウコーニング・シリコーン株式会社 電子部品含浸用オルガノポリシロキサン組成物および電子部品
JP3638746B2 (ja) * 1997-01-30 2005-04-13 東レ・ダウコーニング・シリコーン株式会社 電気・電子部品封止・充填用シリコーンゲル組成物およびシリコーンゲル
JP3983333B2 (ja) * 1997-02-20 2007-09-26 信越化学工業株式会社 付加反応硬化型オルガノポリシロキサン組成物
JP3344286B2 (ja) 1997-06-12 2002-11-11 信越化学工業株式会社 付加硬化型シリコーン樹脂組成物
JP3765444B2 (ja) * 1997-07-10 2006-04-12 東レ・ダウコーニング株式会社 電気・電子部品封止・充填用シリコーンゲル組成物およびシリコーンゲル
JP3482115B2 (ja) * 1997-10-13 2003-12-22 東レ・ダウコーニング・シリコーン株式会社 硬化性シリコーン組成物および電子部品
JP3523098B2 (ja) * 1998-12-28 2004-04-26 信越化学工業株式会社 付加硬化型シリコーン組成物
US6432137B1 (en) 1999-09-08 2002-08-13 Medennium, Inc. High refractive index silicone for use in intraocular lenses
JP4040858B2 (ja) * 2001-10-19 2008-01-30 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP4409160B2 (ja) * 2002-10-28 2010-02-03 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
KR101157407B1 (ko) * 2003-07-07 2012-06-21 다우 코닝 코포레이션 태양 전지의 캡슐화 방법
DE10359705A1 (de) * 2003-12-18 2005-07-14 Wacker-Chemie Gmbh Additionsvernetzende Siliconharzzusammensetzungen

Also Published As

Publication number Publication date
TW200524987A (en) 2005-08-01
KR20140064931A (ko) 2014-05-28
US7527871B2 (en) 2009-05-05
EP1670863A1 (en) 2006-06-21
DE602004026456D1 (de) 2010-05-20
KR101499709B1 (ko) 2015-03-06
ATE463537T1 (de) 2010-04-15
CN1863875A (zh) 2006-11-15
KR20150006490A (ko) 2015-01-16
JP4908736B2 (ja) 2012-04-04
JP2005105217A (ja) 2005-04-21
KR20060096429A (ko) 2006-09-11
WO2005033207A1 (en) 2005-04-14
CN100378172C (zh) 2008-04-02
TWI341857B (en) 2011-05-11
US20070112147A1 (en) 2007-05-17
EP1670863B1 (en) 2010-04-07

Similar Documents

Publication Publication Date Title
KR101699383B1 (ko) 경화성 오가노폴리실록산 조성물 및 반도체 장치
JP4409160B2 (ja) 硬化性オルガノポリシロキサン組成物および半導体装置
JP5667740B2 (ja) 硬化性オルガノポリシロキサン組成物及び半導体装置
KR100909575B1 (ko) 경화성 오가노폴리실록산 조성물, 당해 조성물의 경화생성물의 용도 및 반도체 장치
KR101730840B1 (ko) 경화성 오가노폴리실록산 조성물 및 반도체 장치
KR101436800B1 (ko) 경화성 오가노폴리실록산 조성물 및 반도체 디바이스
JP5534977B2 (ja) 硬化性オルガノポリシロキサン組成物および光半導体装置
JP5524017B2 (ja) 付加硬化型シリコーン組成物、及び該組成物の硬化物により半導体素子が被覆された半導体装置
KR20140017447A (ko) 부가 경화형 실리콘 조성물, 및 상기 조성물의 경화물에 의해 반도체 소자가 피복된 반도체 장치
JP5368379B2 (ja) 硬化性オルガノポリシロキサン組成物及びそれを用いた半導体装置
KR102763788B1 (ko) 부가 경화형 실리콘 조성물 및 반도체 장치
JP2016534160A (ja) 一液型硬化性シリコーン組成物及び光半導体装置
JP2020033406A (ja) 付加硬化型シリコーン組成物及び半導体装置

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL NUMBER: 2015101004796; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20150819

Effective date: 20161215

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20161215

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2014 7009113

Appeal request date: 20150819

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2015101004796

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20191217

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20240915

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000