KR101499709B1 - 경화성 오가노폴리실록산 조성물 및 반도체 장치 - Google Patents

경화성 오가노폴리실록산 조성물 및 반도체 장치 Download PDF

Info

Publication number
KR101499709B1
KR101499709B1 KR1020067006400A KR20067006400A KR101499709B1 KR 101499709 B1 KR101499709 B1 KR 101499709B1 KR 1020067006400 A KR1020067006400 A KR 1020067006400A KR 20067006400 A KR20067006400 A KR 20067006400A KR 101499709 B1 KR101499709 B1 KR 101499709B1
Authority
KR
South Korea
Prior art keywords
silicon
bonded
component
curable organopolysiloxane
organopolysiloxane composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067006400A
Other languages
English (en)
Korean (ko)
Other versions
KR20060096429A (ko
Inventor
요시쓰구 모리타
마사요시 데라다
히로지 에나미
도모코 가토
Original Assignee
다우 코닝 도레이 캄파니 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34419307&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101499709(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 다우 코닝 도레이 캄파니 리미티드 filed Critical 다우 코닝 도레이 캄파니 리미티드
Publication of KR20060096429A publication Critical patent/KR20060096429A/ko
Application granted granted Critical
Publication of KR101499709B1 publication Critical patent/KR101499709B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42Block-or graft-polymers containing polysiloxane sequences
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/12Polysiloxanes containing silicon bound to hydrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70Siloxanes defined by use of the MDTQ nomenclature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Silicon Polymers (AREA)
KR1020067006400A 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치 Expired - Fee Related KR101499709B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003343622A JP4908736B2 (ja) 2003-10-01 2003-10-01 硬化性オルガノポリシロキサン組成物および半導体装置
JPJP-P-2003-00343622 2003-10-01
PCT/JP2004/013724 WO2005033207A1 (en) 2003-10-01 2004-09-14 Curable organopolysiloxane composition and semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020147036448A Division KR20150006490A (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
KR1020147009113A Division KR101699383B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치

Publications (2)

Publication Number Publication Date
KR20060096429A KR20060096429A (ko) 2006-09-11
KR101499709B1 true KR101499709B1 (ko) 2015-03-06

Family

ID=34419307

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020147009113A Expired - Lifetime KR101699383B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
KR1020067006400A Expired - Fee Related KR101499709B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치
KR1020147036448A Ceased KR20150006490A (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020147009113A Expired - Lifetime KR101699383B1 (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147036448A Ceased KR20150006490A (ko) 2003-10-01 2004-09-14 경화성 오가노폴리실록산 조성물 및 반도체 장치

Country Status (9)

Country Link
US (1) US7527871B2 (enExample)
EP (1) EP1670863B1 (enExample)
JP (1) JP4908736B2 (enExample)
KR (3) KR101699383B1 (enExample)
CN (1) CN100378172C (enExample)
AT (1) ATE463537T1 (enExample)
DE (1) DE602004026456D1 (enExample)
TW (1) TWI341857B (enExample)
WO (1) WO2005033207A1 (enExample)

Families Citing this family (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7314770B2 (en) * 2004-11-18 2008-01-01 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7192795B2 (en) * 2004-11-18 2007-03-20 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
JP4800383B2 (ja) * 2005-05-26 2011-10-26 ダウ・コーニング・コーポレイション 小さい形状を成形するための方法およびシリコーン封止剤組成物
JP5247979B2 (ja) * 2005-06-01 2013-07-24 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 透明な硬化物を与えるポリオルガノシロキサン組成物
JP5392805B2 (ja) * 2005-06-28 2014-01-22 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン樹脂組成物および光学部材
EP1749861B1 (en) * 2005-08-03 2014-08-20 Shin-Etsu Chemical Co., Ltd. Addition curable silicone resin composition for light emitting diode
JP2007063538A (ja) * 2005-08-03 2007-03-15 Shin Etsu Chem Co Ltd 発光ダイオード用付加硬化型シリコーン樹脂組成物
US8187726B2 (en) * 2005-08-09 2012-05-29 Sony Corporation Nanoparticle-resin composite material, light emitting device assembly, and filling material for the light-emitting device assembly
US20070092736A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US20070092737A1 (en) * 2005-10-21 2007-04-26 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
EP1949459A4 (en) * 2005-10-24 2014-04-30 3M Innovative Properties Co METHOD FOR PRODUCING AN ILLUMINATING ELEMENT WITH A FORM CAPACITANT
US7595515B2 (en) * 2005-10-24 2009-09-29 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
KR101302277B1 (ko) 2005-10-28 2013-09-02 스미토모 오사카 세멘토 가부시키가이샤 무기산화물 투명 분산액과 무기산화물 입자 함유 수지조성물, 발광소자 밀봉용 조성물 및 발광소자,하드코트막과 광학 기능막 및 광학 부품, 그리고무기산화물 입자 함유 수지 조성물의 제조 방법
MY144041A (en) * 2006-01-17 2011-07-29 Dow Corning Thermally stable transparent silicone resin compositions and methods for their preparation and use
CN101336383B (zh) * 2006-02-01 2012-05-09 陶氏康宁公司 抗冲击的光波导管及其制造方法
CN101389695B (zh) * 2006-02-24 2012-07-04 陶氏康宁公司 用硅氧烷包封的发光器件和用于制备该硅氧烷的可固化的硅氧烷组合物
JP5060074B2 (ja) * 2006-05-11 2012-10-31 東レ・ダウコーニング株式会社 接着促進剤、硬化性オルガノポリシロキサン組成物、および半導体装置
US20070269586A1 (en) * 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
US7655486B2 (en) * 2006-05-17 2010-02-02 3M Innovative Properties Company Method of making light emitting device with multilayer silicon-containing encapsulant
JP5202822B2 (ja) * 2006-06-23 2013-06-05 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
US8092735B2 (en) * 2006-08-17 2012-01-10 3M Innovative Properties Company Method of making a light emitting device having a molded encapsulant
JP5148088B2 (ja) * 2006-08-25 2013-02-20 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
ATE536558T1 (de) 2006-08-28 2011-12-15 Dow Corning Optische bauelemente und silikonzusammensetzungen sowie verfahren zur herstellung der optischen bauelemente
TWI361205B (en) * 2006-10-16 2012-04-01 Rohm & Haas Heat stable aryl polysiloxane compositions
US9944031B2 (en) * 2007-02-13 2018-04-17 3M Innovative Properties Company Molded optical articles and methods of making same
KR20090115803A (ko) 2007-02-13 2009-11-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 렌즈를 갖는 led 소자 및 그 제조 방법
TWI434890B (zh) * 2007-04-06 2014-04-21 Shinetsu Chemical Co 加成可硬化聚矽氧樹脂組成物及使用彼之聚矽氧鏡片
US7960192B2 (en) * 2007-09-14 2011-06-14 3M Innovative Properties Company Light emitting device having silicon-containing composition and method of making same
EP2265666B1 (en) * 2008-03-04 2015-03-25 Dow Corning Corporation Silicone composition, silicone adhesive, coated and laminated substrates
JP5972512B2 (ja) * 2008-06-18 2016-08-17 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物及び半導体装置
JP2010013503A (ja) * 2008-07-01 2010-01-21 Showa Highpolymer Co Ltd 硬化性樹脂組成物およびオプトデバイス
JP5469874B2 (ja) 2008-09-05 2014-04-16 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物、光半導体素子封止剤および光半導体装置
WO2010050625A1 (en) * 2008-10-31 2010-05-06 Dow Corning Toray Co., Ltd. Curable organopolysiloxane composition, optical semiconductor element sealant, and optical semiconductor device
JP4862032B2 (ja) * 2008-12-05 2012-01-25 信越化学工業株式会社 高屈折率を有する硬化物を与える付加硬化型シリコーン組成物、及び該組成物からなる光学素子封止材
JP5526823B2 (ja) * 2009-02-24 2014-06-18 信越化学工業株式会社 シリコーン樹脂で封止された光半導体装置
RU2011139574A (ru) 2009-05-29 2013-07-10 Доу Корнинг Корпорейшн Кремниевая композиция для получения прозрачных кремниевых материалов и оптические устройства
KR101030019B1 (ko) 2009-12-31 2011-04-20 제일모직주식회사 봉지재용 투광성 수지 및 이를 포함하는 전자 소자
EP2530104B1 (en) * 2010-01-25 2016-09-07 LG Chem, Ltd. Silicone resin
US9299896B2 (en) 2010-01-25 2016-03-29 Lg Chem, Ltd. Curable composition
CN104479359B (zh) * 2010-01-25 2018-04-03 Lg化学株式会社 可固化组合物
US9410018B2 (en) 2010-01-25 2016-08-09 Lg Chem, Ltd. Curable composition
WO2011090364A2 (ko) * 2010-01-25 2011-07-28 (주)Lg화학 경화성 조성물
WO2011125463A1 (ja) * 2010-03-31 2011-10-13 積水化学工業株式会社 光半導体装置用封止剤及び光半導体装置
JP5377401B2 (ja) * 2010-04-20 2013-12-25 信越化学工業株式会社 硬化性オルガノポリシロキサン組成物
JP2012007136A (ja) * 2010-05-21 2012-01-12 Sekisui Chem Co Ltd 光半導体装置用封止剤及びそれを用いた光半導体装置
JP5368379B2 (ja) * 2010-06-07 2013-12-18 信越化学工業株式会社 硬化性オルガノポリシロキサン組成物及びそれを用いた半導体装置
JP5640476B2 (ja) * 2010-06-08 2014-12-17 信越化学工業株式会社 光半導体素子封止用樹脂組成物及び発光装置
KR101274418B1 (ko) * 2010-06-24 2013-06-17 세키스이가가쿠 고교가부시키가이샤 광 반도체 장치용 밀봉제 및 이를 이용한 광 반도체 장치
JP5801208B2 (ja) * 2010-07-27 2015-10-28 株式会社Adeka 半導体封止用硬化性組成物
TWI483995B (zh) 2010-08-18 2015-05-11 第一毛織股份有限公司 聚有機矽氧烷與由該聚有機矽氧烷獲得之封裝材料以及包含該封裝材料之電子元件
WO2012053301A1 (ja) * 2010-10-19 2012-04-26 積水化学工業株式会社 光半導体装置用封止剤及びそれを用いた光半導体装置
JP2012097225A (ja) 2010-11-04 2012-05-24 Daicel Corp 硬化性樹脂組成物及び硬化物
JP2012111875A (ja) * 2010-11-25 2012-06-14 Daicel Corp 硬化性樹脂組成物及び硬化物
JP5690571B2 (ja) * 2010-12-07 2015-03-25 株式会社ダイセル 硬化性樹脂組成物
JP5323037B2 (ja) * 2010-12-14 2013-10-23 積水化学工業株式会社 光半導体装置用封止剤及びそれを用いた光半導体装置
US9045639B2 (en) 2010-12-31 2015-06-02 Eternal Materials Co., Ltd. Curable composition and method for manufacturing the same
KR20120078606A (ko) * 2010-12-31 2012-07-10 제일모직주식회사 봉지재 및 상기 봉지재를 포함하는 전자 소자
US8895662B2 (en) 2010-12-31 2014-11-25 Eternal Chemical Co., Ltd. Curable composition and method for manufacturing the same
TWI435914B (zh) 2010-12-31 2014-05-01 Eternal Chemical Co Ltd 可固化之有機聚矽氧烷組合物及其製法
WO2012093909A2 (ko) * 2011-01-06 2012-07-12 주식회사 엘지화학 경화성 조성물
JP5348147B2 (ja) * 2011-01-11 2013-11-20 信越化学工業株式会社 仮接着材組成物、及び薄型ウエハの製造方法
DE102011004789A1 (de) * 2011-02-25 2012-08-30 Wacker Chemie Ag Selbsthaftende, zu Elastomeren vernetzbare Siliconzusammensetzungen
JP5522111B2 (ja) 2011-04-08 2014-06-18 信越化学工業株式会社 シリコーン樹脂組成物及び当該組成物を使用した光半導体装置
WO2012150850A2 (ko) * 2011-05-04 2012-11-08 주식회사 엘지화학 경화성 조성물
JP5760664B2 (ja) * 2011-05-10 2015-08-12 三菱化学株式会社 シリコーン系封止材組成物及び半導体発光装置
JP5603837B2 (ja) * 2011-06-30 2014-10-08 信越化学工業株式会社 付加硬化型シリコーン組成物及び光学素子
WO2013008842A1 (ja) * 2011-07-14 2013-01-17 積水化学工業株式会社 光半導体装置用封止剤及び光半導体装置
KR101136888B1 (ko) * 2011-07-27 2012-04-20 (주)에버텍엔터프라이즈 발광 다이오드용 폴리유기실리콘 조성물
JP5844371B2 (ja) * 2011-08-10 2016-01-13 株式会社Adeka ケイ素含有硬化性組成物及びその硬化物
JP5893874B2 (ja) 2011-09-02 2016-03-23 信越化学工業株式会社 光半導体装置
JP5937798B2 (ja) * 2011-09-07 2016-06-22 株式会社ダイセル ラダー型シルセスキオキサン及びその製造方法、並びに、硬化性樹脂組成物及びその硬化物
EP2784123B1 (en) * 2011-11-25 2019-09-04 LG Chem, Ltd. Curable composition
WO2013077699A1 (ko) * 2011-11-25 2013-05-30 주식회사 엘지화학 경화성 조성물
TWI500660B (zh) 2011-11-25 2015-09-21 Lg化學股份有限公司 可固化之組成物
JP5831959B2 (ja) * 2011-11-25 2015-12-16 エルジー・ケム・リミテッド 硬化性組成物
EP2784104B1 (en) * 2011-11-25 2020-06-17 LG Chem, Ltd. Production method of an organopolysiloxane
WO2013077701A1 (ko) * 2011-11-25 2013-05-30 주식회사 엘지화학 오가노폴리실록산의 제조 방법
EP2784126B1 (en) * 2011-11-25 2019-03-13 LG Chem, Ltd. Curable composition
DE102012200335A1 (de) * 2012-01-11 2013-07-11 Wacker Chemie Ag Hitzestabilisierte Siliconmischung
JP5575820B2 (ja) 2012-01-31 2014-08-20 信越化学工業株式会社 硬化性オルガノポリシロキサン組成物、光学素子封止材および光学素子
JP5660145B2 (ja) * 2012-04-03 2015-01-28 Jsr株式会社 硬化性組成物、硬化物および光半導体装置
JP6435260B2 (ja) 2012-05-14 2018-12-05 モーメンティブ・パフォーマンス・マテリアルズ・インク 高屈折率材料
CN104487517B (zh) 2012-07-27 2017-06-13 Lg化学株式会社 可固化组合物
TWI510554B (zh) * 2012-07-27 2015-12-01 Lg化學股份有限公司 可固化組成物
EP2878633B1 (en) * 2012-07-27 2020-12-30 LG Chem, Ltd. Hardening composition
KR20150054801A (ko) * 2012-09-14 2015-05-20 요코하마 고무 가부시키가이샤 경화성 수지 조성물
KR101565660B1 (ko) 2012-11-28 2015-11-04 주식회사 엘지화학 발광 다이오드
JP6006632B2 (ja) 2012-12-18 2016-10-12 信越化学工業株式会社 付加硬化型シリコーン組成物及び光学素子
JP6096087B2 (ja) 2012-12-21 2017-03-15 信越化学工業株式会社 硬化性シリコーン樹脂組成物、その硬化物及び光半導体デバイス
JP5985981B2 (ja) * 2012-12-28 2016-09-06 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP5819866B2 (ja) 2013-01-10 2015-11-24 信越化学工業株式会社 付加硬化型シリコーン組成物、光学素子封止材および光学素子
JP6237880B2 (ja) * 2013-04-04 2017-11-29 エルジー・ケム・リミテッド 硬化性組成物
EP2982716B1 (en) * 2013-04-04 2018-10-03 LG Chem, Ltd. Curable composition
KR101911694B1 (ko) * 2013-08-29 2018-10-25 다우 코닝 도레이 캄파니 리미티드 경화성 실리콘 조성물, 그의 경화물, 및 광반도체 장치
CN103525095A (zh) * 2013-09-30 2014-01-22 瑞金市瑞谷科技发展有限公司 一种可固化的有机基聚硅氧烷组合物
CN103724939A (zh) * 2013-12-26 2014-04-16 东莞市广海大橡塑科技有限公司 一种封装二极管
US10155852B2 (en) 2014-01-27 2018-12-18 Dow Corning Toray Co., Ltd. Silicone gel composition
JP6643985B2 (ja) 2014-01-28 2020-02-12 エルジー・ケム・リミテッド 硬化体
WO2015115811A1 (ko) * 2014-01-28 2015-08-06 주식회사 엘지화학 경화체
TWI624510B (zh) 2014-02-04 2018-05-21 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
TWI653295B (zh) 2014-02-04 2019-03-11 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
KR20150097947A (ko) 2014-02-19 2015-08-27 다우 코닝 코포레이션 반응성 실리콘 조성물, 이로부터 제조되는 핫멜트 재료, 및 경화성 핫멜트 조성물
JP6100717B2 (ja) 2014-03-05 2017-03-22 信越化学工業株式会社 付加硬化型シリコーン組成物及び光学素子
TWI506058B (zh) 2014-03-18 2015-11-01 Benq Materials Corp 可固化矽樹脂組成物
WO2015194159A1 (ja) * 2014-06-20 2015-12-23 東レ・ダウコーニング株式会社 オルガノポリシロキサンおよびその製造方法
JP6325471B2 (ja) 2015-03-02 2018-05-16 株式会社東芝 光結合装置および絶縁装置
US9416273B1 (en) 2015-04-30 2016-08-16 Eternal Materials Co., Ltd. Curable composition and method for manufacturing the same
CN106317895B (zh) * 2015-06-30 2019-09-06 广州慧谷化学有限公司 一种可固化的有机聚硅氧烷组合物及半导体器件
KR101720220B1 (ko) 2015-08-21 2017-03-28 주식회사 케이씨씨 오르가노 폴리실록산 조성물
DE102015225906A1 (de) 2015-12-18 2017-06-22 Wacker Chemie Ag Siloxanharzzusammensetzungen
DE102015225921A1 (de) 2015-12-18 2017-06-22 Wacker Chemie Ag Siloxanharzzusammensetzungen
WO2017126199A1 (ja) * 2016-01-19 2017-07-27 セントラル硝子株式会社 硬化性シリコーン樹脂組成物およびその硬化物、並びにこれらを用いた光半導体装置
JP6481647B2 (ja) 2016-03-22 2019-03-13 信越化学工業株式会社 紫外線硬化性シリコーン組成物、その硬化物、及び該組成物からなる光学素子封止材、並びに該光学素子封止材により封止された光学素子
WO2018028792A1 (en) * 2016-08-12 2018-02-15 Wacker Chemie Ag Curable organopolysiloxane composition, encapsulant and semiconductor device
JP6754317B2 (ja) * 2017-04-27 2020-09-09 信越化学工業株式会社 付加硬化型シリコーン組成物、該組成物の製造方法、シリコーン硬化物、及び光学素子
CN107541075B (zh) * 2017-09-28 2021-07-23 广州慧谷化学有限公司 热熔型有机聚硅氧烷组合物、荧光体片材及半导体器件
US11549039B2 (en) * 2017-10-19 2023-01-10 Dow Silicones Corporation Pressure sensitive adhesive composition and methods for its preparation and use in flexible organic light emitting diode applications
TW201917173A (zh) * 2017-10-20 2019-05-01 日商道康寧東麗股份有限公司 固化性矽組合物以及光半導體裝置
WO2019137975A2 (en) 2018-01-11 2019-07-18 Basf Se C2-c3-alkenyl-substituted rylene imide dyes and curing product of curable silicon resin composition and c2-c3-alkenyl-substituted rylene imide dyes
TWI787444B (zh) * 2018-02-07 2022-12-21 日商陶氏東麗股份有限公司 可固化聚矽氧組成物、其固化產物、及光學半導體裝置
TWI798343B (zh) * 2018-03-12 2023-04-11 美商陶氏有機矽公司 可固化聚矽氧組成物及其經固化產物
JP2020007537A (ja) 2018-06-29 2020-01-16 信越化学工業株式会社 硬化性有機ケイ素樹脂組成物及び半導体装置
CN111819254B (zh) * 2018-08-31 2022-06-10 瓦克化学股份公司 可固化的有机聚硅氧烷组合物、密封剂和半导体器件
TWI844552B (zh) 2018-09-10 2024-06-11 美商陶氏有機矽公司 用於生產光學聚矽氧總成之方法、及藉其生產之光學聚矽氧總成
JP7021046B2 (ja) * 2018-10-22 2022-02-16 信越化学工業株式会社 付加硬化型シリコーン組成物、シリコーン硬化物、及び、光学素子
JP7099355B2 (ja) 2019-02-18 2022-07-12 信越化学工業株式会社 熱硬化性シリコーン組成物およびその硬化物
TWI856127B (zh) 2019-08-06 2024-09-21 美商陶氏有機矽公司 雙重固化組成物
JP7556522B2 (ja) * 2020-08-14 2024-09-26 デュポン・東レ・スペシャルティ・マテリアル株式会社 硬化性シリコーン組成物、封止材、および光半導体装置
TW202428780A (zh) * 2022-12-05 2024-07-16 美商陶氏有機矽公司 Uv可固化聚矽氧組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234713A (en) * 1979-05-29 1980-11-18 Dow Corning Corporation Curable solventless organopolysiloxane compositions
JPH10231428A (ja) * 1997-02-20 1998-09-02 Shin Etsu Chem Co Ltd 付加反応硬化型オルガノポリシロキサン組成物
JPH11181289A (ja) * 1997-10-13 1999-07-06 Dow Corning Toray Silicone Co Ltd 硬化性シリコーン組成物および電子部品
JP2003128922A (ja) * 2001-10-19 2003-05-08 Dow Corning Toray Silicone Co Ltd 硬化性オルガノポリシロキサン組成物および半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996195A (en) * 1974-11-15 1976-12-07 Shinetsu Chemical Company Curable organosilicon compositions
US3944519A (en) * 1975-03-13 1976-03-16 Dow Corning Corporation Curable organopolysiloxane compositions
HU203712B (en) * 1985-09-02 1991-09-30 Sarkadi Cukorgyar Soil-improving and fertilizer-producing process with composting slams of sugar-mills
US5272013A (en) * 1992-08-21 1993-12-21 General Electric Company Articles made of high refractive index phenol-modified siloxanes
JP3574226B2 (ja) 1994-10-28 2004-10-06 東レ・ダウコーニング・シリコーン株式会社 硬化性シリコーン組成物およびその硬化物
JP3618446B2 (ja) * 1995-10-18 2005-02-09 東レ・ダウコーニング・シリコーン株式会社 電子部品含浸用オルガノポリシロキサン組成物および電子部品
JP3638746B2 (ja) * 1997-01-30 2005-04-13 東レ・ダウコーニング・シリコーン株式会社 電気・電子部品封止・充填用シリコーンゲル組成物およびシリコーンゲル
JP3344286B2 (ja) 1997-06-12 2002-11-11 信越化学工業株式会社 付加硬化型シリコーン樹脂組成物
JP3765444B2 (ja) * 1997-07-10 2006-04-12 東レ・ダウコーニング株式会社 電気・電子部品封止・充填用シリコーンゲル組成物およびシリコーンゲル
JP3523098B2 (ja) * 1998-12-28 2004-04-26 信越化学工業株式会社 付加硬化型シリコーン組成物
US6432137B1 (en) 1999-09-08 2002-08-13 Medennium, Inc. High refractive index silicone for use in intraocular lenses
JP4409160B2 (ja) * 2002-10-28 2010-02-03 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および半導体装置
JP2004186168A (ja) * 2002-11-29 2004-07-02 Shin Etsu Chem Co Ltd 発光ダイオード素子用シリコーン樹脂組成物
EP1644989B9 (en) * 2003-07-07 2012-04-04 Dow Corning Corporation Encapsulation of solar cells
DE10359705A1 (de) * 2003-12-18 2005-07-14 Wacker-Chemie Gmbh Additionsvernetzende Siliconharzzusammensetzungen

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234713A (en) * 1979-05-29 1980-11-18 Dow Corning Corporation Curable solventless organopolysiloxane compositions
JPH10231428A (ja) * 1997-02-20 1998-09-02 Shin Etsu Chem Co Ltd 付加反応硬化型オルガノポリシロキサン組成物
JPH11181289A (ja) * 1997-10-13 1999-07-06 Dow Corning Toray Silicone Co Ltd 硬化性シリコーン組成物および電子部品
JP2003128922A (ja) * 2001-10-19 2003-05-08 Dow Corning Toray Silicone Co Ltd 硬化性オルガノポリシロキサン組成物および半導体装置

Also Published As

Publication number Publication date
JP2005105217A (ja) 2005-04-21
CN1863875A (zh) 2006-11-15
KR20060096429A (ko) 2006-09-11
ATE463537T1 (de) 2010-04-15
JP4908736B2 (ja) 2012-04-04
TWI341857B (en) 2011-05-11
KR101699383B1 (ko) 2017-01-24
EP1670863B1 (en) 2010-04-07
DE602004026456D1 (de) 2010-05-20
KR20140064931A (ko) 2014-05-28
CN100378172C (zh) 2008-04-02
TW200524987A (en) 2005-08-01
EP1670863A1 (en) 2006-06-21
KR20150006490A (ko) 2015-01-16
US20070112147A1 (en) 2007-05-17
WO2005033207A1 (en) 2005-04-14
US7527871B2 (en) 2009-05-05

Similar Documents

Publication Publication Date Title
KR101499709B1 (ko) 경화성 오가노폴리실록산 조성물 및 반도체 장치
JP4409160B2 (ja) 硬化性オルガノポリシロキサン組成物および半導体装置
JP5667740B2 (ja) 硬化性オルガノポリシロキサン組成物及び半導体装置
KR100909575B1 (ko) 경화성 오가노폴리실록산 조성물, 당해 조성물의 경화생성물의 용도 및 반도체 장치
KR101436800B1 (ko) 경화성 오가노폴리실록산 조성물 및 반도체 디바이스
KR101730840B1 (ko) 경화성 오가노폴리실록산 조성물 및 반도체 장치
JP5524017B2 (ja) 付加硬化型シリコーン組成物、及び該組成物の硬化物により半導体素子が被覆された半導体装置
KR20140017447A (ko) 부가 경화형 실리콘 조성물, 및 상기 조성물의 경화물에 의해 반도체 소자가 피복된 반도체 장치
JP5368379B2 (ja) 硬化性オルガノポリシロキサン組成物及びそれを用いた半導体装置
KR102763788B1 (ko) 부가 경화형 실리콘 조성물 및 반도체 장치
JP2020033406A (ja) 付加硬化型シリコーン組成物及び半導体装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

E14-X000 Pre-grant third party observation filed

St.27 status event code: A-2-3-E10-E14-opp-X000

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20130924

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2006 7006400

Appeal request date: 20121203

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2012101010224

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PS0601 Decision to reject again after remand of revocation

St.27 status event code: N-3-6-B10-B17-rex-PS0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180201

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20200218

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20240303

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240303