JP3364081B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP3364081B2
JP3364081B2 JP05373796A JP5373796A JP3364081B2 JP 3364081 B2 JP3364081 B2 JP 3364081B2 JP 05373796 A JP05373796 A JP 05373796A JP 5373796 A JP5373796 A JP 5373796A JP 3364081 B2 JP3364081 B2 JP 3364081B2
Authority
JP
Japan
Prior art keywords
film
substrate
silicon
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05373796A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08288522A (ja
Inventor
舜平 山崎
康行 荒井
聡 寺本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP05373796A priority Critical patent/JP3364081B2/ja
Publication of JPH08288522A publication Critical patent/JPH08288522A/ja
Application granted granted Critical
Publication of JP3364081B2 publication Critical patent/JP3364081B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Helmets And Other Head Coverings (AREA)
JP05373796A 1995-02-16 1996-02-15 半導体装置の作製方法 Expired - Fee Related JP3364081B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05373796A JP3364081B2 (ja) 1995-02-16 1996-02-15 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7-53219 1995-02-16
JP5321995 1995-02-16
JP05373796A JP3364081B2 (ja) 1995-02-16 1996-02-15 半導体装置の作製方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2000195960A Division JP3364197B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195962A Division JP3934310B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195959A Division JP3369539B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH08288522A JPH08288522A (ja) 1996-11-01
JP3364081B2 true JP3364081B2 (ja) 2003-01-08

Family

ID=12936724

Family Applications (6)

Application Number Title Priority Date Filing Date
JP05373796A Expired - Fee Related JP3364081B2 (ja) 1995-02-16 1996-02-15 半導体装置の作製方法
JP2000195959A Expired - Fee Related JP3369539B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195962A Expired - Lifetime JP3934310B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195960A Expired - Fee Related JP3364197B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2004173557A Expired - Lifetime JP3934628B2 (ja) 1995-02-16 2004-06-11 半導体装置の作製方法
JP2004173559A Expired - Lifetime JP3934629B2 (ja) 1995-02-16 2004-06-11 半導体装置、ヘルメット、フロントガラス及び風防ガラスの作製方法

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2000195959A Expired - Fee Related JP3369539B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195962A Expired - Lifetime JP3934310B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195960A Expired - Fee Related JP3364197B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2004173557A Expired - Lifetime JP3934628B2 (ja) 1995-02-16 2004-06-11 半導体装置の作製方法
JP2004173559A Expired - Lifetime JP3934629B2 (ja) 1995-02-16 2004-06-11 半導体装置、ヘルメット、フロントガラス及び風防ガラスの作製方法

Country Status (3)

Country Link
US (7) US5821138A (enExample)
JP (6) JP3364081B2 (enExample)
KR (5) KR100288111B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2001047A1 (en) 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
CN102169850A (zh) * 2006-04-28 2011-08-31 株式会社半导体能源研究所 半导体集成电路及其制造方法、使用该电路的半导体装置

Families Citing this family (352)

* Cited by examiner, † Cited by third party
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JPH0869967A (ja) 1994-08-26 1996-03-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
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JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
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JP3544280B2 (ja) 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3856901B2 (ja) 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
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US20080309585A1 (en) 2008-12-18
US5821138A (en) 1998-10-13
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US7361519B2 (en) 2008-04-22
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US6998282B1 (en) 2006-02-14
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US8497509B2 (en) 2013-07-30
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KR100376801B1 (ko) 2003-03-19
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US7375782B2 (en) 2008-05-20
JP3934628B2 (ja) 2007-06-20
KR100432589B1 (ko) 2004-05-28
US20050162578A1 (en) 2005-07-28
JP3369539B2 (ja) 2003-01-20
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