JP2018503254A - Iii−nデバイスの凹部に形成されるオーミックコンタクト - Google Patents
Iii−nデバイスの凹部に形成されるオーミックコンタクト Download PDFInfo
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- 230000000630 rising effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 19
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000000460 chlorine Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 147
- 239000000463 material Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 108091006149 Electron carriers Proteins 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
Claims (31)
- 上側と、前記上側の反対側である下側とを有するIII−N層と、
前記III−N層の上側に形成された少なくとも1つの導電性コンタクトであって、前記III−N層内に延びる導電性コンタクトと、を備え、前記導電性コンタクトは、
前記III−N層の前記下側の逆を向く頂部側と、
前記III−N層の前記下側を向く底部側とを有し、前記底部側は、
第1端と、前記第1端の反対側である第2端と、
前記第1端から、前記第1端よりも前記頂部側に近い中間点まで上昇する第1側部と、
前記中間点から、前記中間点よりも前記頂部側から遠い前記第2端まで下降する第2側部とを有するデバイス。 - 前記第1側部は、前記第1端から前記中間点まで単調に上昇し、前記第2側部は、前記中間点から前記第2端まで単調に下降する、請求項1に記載のデバイス。
- 前記III−N層は、III−Nチャネル層とIII−Nバリア層とを含み、前記III−Nチャネル層と前記III−Nバリア層との組成差により、前記III−Nバリア層に隣接する前記III−Nチャネル層内に2DEGチャネルが誘導される、請求項1に記載のデバイス。
- 前記第1側部は、前記第1端から前記中間点に向かって湾曲し、前記第2側部は、前記第2端から前記中間点に向かって湾曲し、前記導電性コンタクトの底部側に実質的に丸みがある溝形状が形成されている、請求項1に記載のデバイス。
- 前記III−N層は、
GaN層と、
前記GaN層上のIII−Nスペーサ層と、
前記III−Nスペーサ層上のIII−Nバリア層とを含む、請求項1に記載のデバイス。 - 前記III−Nスペーサ層は、前記III−Nバリア層よりも大きなバンドギャップを有する、請求項5に記載のデバイス。
- 前記第1端又は前記第2端、又はこの両方は、前記III−Nスペーサ層まで延び、
前記中間点は、前記III−Nバリア層内に位置する、請求項6に記載のデバイス。 - 前記第1端及び前記第2端の少なくとも1つは、前記III−Nスペーサ層を貫通して前記GaN層に接触する、請求項7に記載のデバイス。
- 前記III−Nスペーサ層は、AlNを含み、前記III−Nバリア層は、AlGaNを含む、請求項5に記載のデバイス。
- 前記導電性コンタクトは、ソースコンタクトであり、前記デバイスは、ドレインコンタクトとゲートコンタクトとを更に含み、トランジスタを構成する、請求項1に記載のデバイス。
- 前記ドレインコンタクトは、
前記III−N層の下側の逆を向くドレイン頂部側と、
前記III−N層の下側を向くドレイン底部側とを有し、前記ドレイン底部側は、
ドレイン第1端と、前記ドレイン第1端の反対側であるドレイン第2端と、
前記ドレイン第1端から、前記ドレイン第1端よりも前記ドレイン頂部側に近いドレイン中間点まで上昇するドレイン第1側部と、
前記ドレイン中間点から、前記ドレイン中間点よりも前記ドレイン頂部側から遠い前記ドレイン第2端まで下降するドレイン第2側部とを有する、請求項10に記載のデバイス。 - 前記トランジスタは、前記ドレイン、ソース及びゲートが同じ側にあるラテラルトランジスタである、請求項11に記載のデバイス。
- 前記ドレイン第1側部は、前記ドレイン第1端から前記ドレイン中間点まで単調に上昇し、前記ドレイン第2側部は、前記ドレイン中間点から前記ドレイン第2端まで単調に下降する、請求項11に記載のデバイス。
- 前記導電性コンタクトは、0.3Ωmm以下の正規化接触抵抗を有する、請求項1に記載のデバイス。
- 前記第1端及び/又は前記第2端は、300ナノメートル未満の幅を有する、請求項1に記載のデバイス。
- 前記III−N層は、基板上にある、請求項1に記載のデバイス。
- デバイスを製造する方法であって、
上側と、前記上側の反対側である下側とを有するIII−N層を形成することと、
レジストパターンを用いて前記III−N層の表面をエッチングすることを含む、前記III−N層の上側の表面に凹部を形成することと、
前記III−N層の表面の凹部に導電性コンタクトを形成することと、を含み、前記導電性コンタクトは、
前記III−N層の前記下側の逆を向く頂部側と、
前記III−N層の前記下側を向く底部側と、を有し、前記底部側は、
第1端と、前記第1端の反対側である第2端と、
前記第1端から、前記第1端よりも前記頂部側に近い中間点まで上昇する第1側部と、
前記中間点から、前記中間点よりも前記頂部側から遠い前記第2端まで下降する第2側部とを有する方法。 - 前記導電性コンタクトを形成することは、前記第1側部が前記第1端から前記中間点まで単調に上昇し、前記第2側部が前記中間点から前記第2端まで単調に下降するように前記導電性コンタクトを形成することを含む、請求項17に記載の方法。
- 前記デバイスを300℃〜600℃の温度に加熱することを含む、請求項17に記載の方法。
- 前記デバイスを加熱することは、前記デバイスを1〜3分間加熱することを含む、請求項19に記載の方法。
- 前記III−N層の表面をエッチングすることは、塩素系ガスを用いてドライエッチングを行うことを含む、請求項17に記載の方法。
- 前記III−N層の表面をエッチングすることは、25W以下のRFバイアスで、Cl2プラズマ内でプラズマエッチングを行うことを含む、請求項21に記載の方法。
- 前記III−N層を形成することは、
GaN層と、
前記GaN層上のIII−Nスペーサ層と、
前記AlNスペーサ層上のAlGaN層とを形成することを含む、請求項17に記載の方法。 - 前記凹部を形成することは、前記AlGaN層を貫通して前記AlNスペーサ層まで前記凹部を形成することを含む、請求項23に記載の方法。
- 前記凹部を形成することは、前記AlGaN層を貫通して前記AlNスペーサ層内まで前記凹部を形成することを含む、請求項23に記載の方法。
- 前記凹部を形成することは、前記AlGaN層及び前記AlNスペーサ層を貫通して前記GaN層内まで前記凹部を形成することを含む、請求項23に記載の方法。
- デバイスを製造する方法であって、
レジストパターンを用いてIII−N層の表面をエッチングすることを含む、導電性チャネルを有するIII−N層の表面に凹部を形成することと、
前記III−N層の表面の凹部に導電性コンタクトを形成することとを含み、前記導電性コンタクトは、前記導電性チャネルと電気的に接触し、前記導電性コンタクトは、前記凹部の底面に接触する底部側と、前記底部側の逆を向く頂部側とを有し、
前記表面のエッチングにより、前記凹部の底面は、
第1端と、前記第1端の反対側である第2端と、
前記第1端から前記第1端よりも前記頂部側に近い中間点まで単調に上昇する第1側部と、
前記中間点から、前記中間点よりも前記頂部側から遠い前記第2端まで単調に下降する第2側部とを有する方法。 - 上側と、前記上側の反対側である下側とを有するIII−N層と、
前記III−N層の上側に形成され、前記III−N層の下側とは逆を向く頂部側と、前記III−N層の下側を向く底部側とを含む導電性コンタクトであって、前記底部側は、第1端と、前記第1端の反対側である第2端と、前記第1端と前記第2端との間の中間点とを含む導電性コンタクトと、
前記III−N層内の2DEGチャネルと、を備え、
前記2DEGチャネルは、前記中間点の下の第1の部分と、前記第1端及び前記第2端の下の第2の部分とを含み、前記第2の部分は、前記第1の部分よりも高い電子濃度を有するデバイス。 - 前記III−N層は、凹部を含み、前記導電性コンタクトは、前記凹部内にある、請求項28に記載のデバイス。
- 前記2DEGチャネルと前記導電性コンタクトの前記底部側の前記第1端との間の距離は、前記2DEGチャネルと前記中間点との間の距離より短い、請求項28に記載のデバイス。
- 前記導電性コンタクトは、前記2DEGチャネルとオーミック接触している、請求項28に記載のデバイス。
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