JP5767811B2 - Iii族窒化物双方向スイッチ - Google Patents
Iii族窒化物双方向スイッチ Download PDFInfo
- Publication number
- JP5767811B2 JP5767811B2 JP2010525023A JP2010525023A JP5767811B2 JP 5767811 B2 JP5767811 B2 JP 5767811B2 JP 2010525023 A JP2010525023 A JP 2010525023A JP 2010525023 A JP2010525023 A JP 2010525023A JP 5767811 B2 JP5767811 B2 JP 5767811B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- iii
- voltage
- switch
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000002457 bidirectional effect Effects 0.000 title claims description 44
- 230000006698 induction Effects 0.000 claims 3
- 239000011159 matrix material Substances 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000013641 positive control Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electronic Switches (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
Claims (4)
- 誘導コイルへ接続されている第1ノードにおける電圧をスイッチングする方法において、
直列に接続されている第1及び第2III・Nベース高電子移動度トランジスタを有している第1双方向スイッチ及び直列に接続されている第3及び第4III・Nベース高電子移動度トランジスタを有している第2双方向スイッチが該第1ノードへ接続されており、第2ノードが該第1双方向スイッチの該第1ノードとは反対側に設けられており、第3ノードが該第2双方向スイッチの該第1ノードとは反対側に設けられており、第4ノードが該誘導コイルの該第1ノードとは反対側に設けられており、
該第1双方向スイッチの第1及び第2ゲートを高へバイアスさせ且つ該第2双方向スイッチの第3及び第4ゲートを低へバイアスさせ、該第1ゲートは該第1III・Nベース高電子移動度トランジスタのゲートであり、該第2ゲートは該第2III・Nベース高電子移動度トランジスタのゲートであり、該第3ゲートは該第3III・Nベース高電子移動度トランジスタのゲートであり、該第4ゲートは該第4III・Nベース高電子移動度トランジスタのゲートであり、電流は該第1双方向スイッチから該誘導コイル内に流れ、
該第3ノードにおける電圧が該第2ノードにおける電圧よりも高く且つ該第2ノード及び該第3ノードにおける電圧が該第4ノードにおける電圧よりも高い間に、第1時間において、該第1ゲートを低へスイッチングさせ、
第2時間において、該第4ゲートを高へスイッチングさせ、そのことが該第2双方向スイッチをオンさせ且つ該第1双方向スイッチをオフさせ且つ該第1双方向スイッチを介してではなく該第2双方向スイッチを介して電流を流させる、
方法。 - 請求項1において、更に、第3時間において、該第2ゲートを低へスイッチングさせ、且つ第4時間において、該第3ゲートを高へスイッチングさせ、該第2ゲートを低へスイッチングさせることが該第1双方向スイッチをオフに維持することを確保し、且つ該第3ゲートを高へスイッチングさせることが該第2双方向スイッチをオンに維持することを確保する、方法。
- 請求項2において、該第1ゲートが低へスイッチされる場合に、該ノードにおける電圧が降下する、方法。
- 請求項1乃至3の内のいずれかの請求項において、該第1、第2、第3、及び第4III・Nベース高電子移動度トランジスタがエンハンスメントモードトランジスタである、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97172107P | 2007-09-12 | 2007-09-12 | |
US60/971,721 | 2007-09-12 | ||
PCT/US2008/076160 WO2009036266A2 (en) | 2007-09-12 | 2008-09-12 | Iii-nitride bidirectional switches |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010539712A JP2010539712A (ja) | 2010-12-16 |
JP5767811B2 true JP5767811B2 (ja) | 2015-08-19 |
Family
ID=40430882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010525023A Active JP5767811B2 (ja) | 2007-09-12 | 2008-09-12 | Iii族窒化物双方向スイッチ |
Country Status (4)
Country | Link |
---|---|
US (1) | US7875907B2 (ja) |
EP (2) | EP2887402B1 (ja) |
JP (1) | JP5767811B2 (ja) |
WO (1) | WO2009036266A2 (ja) |
Families Citing this family (122)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7795642B2 (en) * | 2007-09-14 | 2010-09-14 | Transphorm, Inc. | III-nitride devices with recessed gates |
US20090072269A1 (en) * | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US8791503B2 (en) * | 2007-09-18 | 2014-07-29 | International Rectifier Corporation | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
JP5433214B2 (ja) * | 2007-12-07 | 2014-03-05 | パナソニック株式会社 | モータ駆動回路 |
US8659275B2 (en) * | 2008-01-11 | 2014-02-25 | International Rectifier Corporation | Highly efficient III-nitride power conversion circuit |
US7965126B2 (en) | 2008-02-12 | 2011-06-21 | Transphorm Inc. | Bridge circuits and their components |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
US8138529B2 (en) | 2009-11-02 | 2012-03-20 | Transphorm Inc. | Package configurations for low EMI circuits |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US8816497B2 (en) | 2010-01-08 | 2014-08-26 | Transphorm Inc. | Electronic devices and components for high efficiency power circuits |
JP5625363B2 (ja) * | 2010-01-20 | 2014-11-19 | パナソニック株式会社 | 双方向スイッチのゲート駆動装置 |
US8624662B2 (en) | 2010-02-05 | 2014-01-07 | Transphorm Inc. | Semiconductor electronic components and circuits |
JP5895170B2 (ja) * | 2010-02-23 | 2016-03-30 | パナソニックIpマネジメント株式会社 | 2線式交流スイッチ |
US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
US8981380B2 (en) * | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
JP5666157B2 (ja) * | 2010-03-26 | 2015-02-12 | パナソニック株式会社 | 双方向スイッチ素子及びそれを用いた双方向スイッチ回路 |
JP2012004253A (ja) * | 2010-06-15 | 2012-01-05 | Panasonic Corp | 双方向スイッチ、2線式交流スイッチ、スイッチング電源回路および双方向スイッチの駆動方法 |
JP2012028470A (ja) * | 2010-07-21 | 2012-02-09 | Panasonic Electric Works Co Ltd | スイッチ装置 |
US8519916B2 (en) * | 2010-08-11 | 2013-08-27 | Sarda Technologies, Inc. | Low interconnect resistance integrated switches |
US8896034B1 (en) | 2010-08-11 | 2014-11-25 | Sarda Technologies, Inc. | Radio frequency and microwave devices and methods of use |
US9236378B2 (en) | 2010-08-11 | 2016-01-12 | Sarda Technologies, Inc. | Integrated switch devices |
JP5742159B2 (ja) * | 2010-10-05 | 2015-07-01 | サンケン電気株式会社 | 半導体装置 |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8786327B2 (en) | 2011-02-28 | 2014-07-22 | Transphorm Inc. | Electronic components with reactive filters |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
WO2012154974A1 (en) | 2011-05-10 | 2012-11-15 | Enphase Energy, Inc. | Four quadrant bidirectional switch |
GB201112327D0 (en) * | 2011-07-18 | 2011-08-31 | Epigan Nv | Method for growing III-V epitaxial layers |
JP5878317B2 (ja) * | 2011-08-08 | 2016-03-08 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US8674372B2 (en) * | 2011-08-19 | 2014-03-18 | Infineon Technologies Austria Ag | HEMT with integrated low forward bias diode |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
US9209176B2 (en) | 2011-12-07 | 2015-12-08 | Transphorm Inc. | Semiconductor modules and methods of forming the same |
US9024356B2 (en) * | 2011-12-20 | 2015-05-05 | Infineon Technologies Austria Ag | Compound semiconductor device with buried field plate |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
US8648643B2 (en) | 2012-02-24 | 2014-02-11 | Transphorm Inc. | Semiconductor power modules and devices |
JP6054620B2 (ja) * | 2012-03-29 | 2016-12-27 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
WO2013155108A1 (en) | 2012-04-09 | 2013-10-17 | Transphorm Inc. | N-polar iii-nitride transistors |
US9166068B2 (en) * | 2012-05-03 | 2015-10-20 | The United States Of America As Represented By The Secretary Of The Army | Semiconductor heterobarrier electron device and method of making |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US8803246B2 (en) | 2012-07-16 | 2014-08-12 | Transphorm Inc. | Semiconductor electronic components with integrated current limiters |
KR101927411B1 (ko) * | 2012-09-28 | 2018-12-10 | 삼성전자주식회사 | 2deg와 2dhg를 이용한 반도체 소자 및 제조방법 |
JP5949527B2 (ja) * | 2012-12-21 | 2016-07-06 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置、高周波増幅器 |
WO2014127150A1 (en) | 2013-02-15 | 2014-08-21 | Transphorm Inc. | Electrodes for semiconductor devices and methods of forming the same |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245993B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
US9059076B2 (en) | 2013-04-01 | 2015-06-16 | Transphorm Inc. | Gate drivers for circuits based on semiconductor devices |
US9978862B2 (en) | 2013-04-30 | 2018-05-22 | Infineon Technologies Austria Ag | Power transistor with at least partially integrated driver stage |
US9799643B2 (en) * | 2013-05-23 | 2017-10-24 | Infineon Technologies Austria Ag | Gate voltage control for III-nitride transistors |
WO2015006111A1 (en) | 2013-07-09 | 2015-01-15 | Transphorm Inc. | Multilevel inverters and their components |
US9443938B2 (en) | 2013-07-19 | 2016-09-13 | Transphorm Inc. | III-nitride transistor including a p-type depleting layer |
US9245991B2 (en) * | 2013-08-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing |
US9166006B1 (en) * | 2013-12-08 | 2015-10-20 | Iman Rezanezhad Gatabi | Methods to improve the performance of compound semiconductor devices and field effect transistors |
KR101758082B1 (ko) * | 2013-12-30 | 2017-07-17 | 한국전자통신연구원 | 질화물 반도체 소자의 제조 방법 |
US9472625B2 (en) | 2014-03-17 | 2016-10-18 | Infineon Technologies Austria Ag | Operational Gallium Nitride devices |
US20150280595A1 (en) * | 2014-04-01 | 2015-10-01 | Hamilton Sundstrand Corporation | Switch configuration for a matrix convertor |
US9543940B2 (en) | 2014-07-03 | 2017-01-10 | Transphorm Inc. | Switching circuits having ferrite beads |
US9590494B1 (en) | 2014-07-17 | 2017-03-07 | Transphorm Inc. | Bridgeless power factor correction circuits |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
US9728630B2 (en) | 2014-09-05 | 2017-08-08 | Infineon Technologies Austria Ag | High-electron-mobility transistor having a buried field plate |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
US9985626B2 (en) * | 2015-01-30 | 2018-05-29 | Navitas Semiconductor, Inc. | Bidirectional GaN switch with built-in bias supply and integrated gate drivers |
US10200030B2 (en) | 2015-03-13 | 2019-02-05 | Transphorm Inc. | Paralleling of switching devices for high power circuits |
US10756084B2 (en) * | 2015-03-26 | 2020-08-25 | Wen-Jang Jiang | Group-III nitride semiconductor device and method for fabricating the same |
US9660062B2 (en) | 2015-04-30 | 2017-05-23 | Semiconductor Components Industries, Llc | Bidirectional HEMT and an electronic package including the bidirectional HEMT |
DE102015117395A1 (de) * | 2015-10-13 | 2017-04-13 | Infineon Technologies Austria Ag | Schaltkreis, Halbleiterbauelement und Verfahren |
US9960157B2 (en) * | 2015-10-15 | 2018-05-01 | Infineon Technologies Austria Ag | Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits |
TWI670851B (zh) * | 2015-10-28 | 2019-09-01 | 晶元光電股份有限公司 | 半導體功率元件 |
US9837522B2 (en) * | 2015-11-02 | 2017-12-05 | Infineon Technologies Austria Ag | III-nitride bidirectional device |
ITUB20155536A1 (it) | 2015-11-12 | 2017-05-12 | St Microelectronics Srl | Transistore hemt di tipo normalmente spento includente una trincea contenente una regione di gate e formante almeno un gradino, e relativo procedimento di fabbricazione |
US11322599B2 (en) | 2016-01-15 | 2022-05-03 | Transphorm Technology, Inc. | Enhancement mode III-nitride devices having an Al1-xSixO gate insulator |
CN107154430B (zh) * | 2016-03-04 | 2020-06-16 | 北京大学 | 双向开关晶体管 |
WO2017210323A1 (en) | 2016-05-31 | 2017-12-07 | Transphorm Inc. | Iii-nitride devices including a graded depleting layer |
US9673311B1 (en) | 2016-06-14 | 2017-06-06 | Semiconductor Components Industries, Llc | Electronic device including a multiple channel HEMT |
US9741840B1 (en) | 2016-06-14 | 2017-08-22 | Semiconductor Components Industries, Llc | Electronic device including a multiple channel HEMT and an insulated gate electrode |
US9774322B1 (en) | 2016-06-22 | 2017-09-26 | Sarda Technologies, Inc. | Gate driver for depletion-mode transistors |
CN106653837B (zh) * | 2016-12-02 | 2019-09-13 | 电子科技大学 | 一种氮化镓双向开关器件 |
US10319648B2 (en) | 2017-04-17 | 2019-06-11 | Transphorm Inc. | Conditions for burn-in of high power semiconductors |
GB2564482B (en) | 2017-07-14 | 2021-02-10 | Cambridge Entpr Ltd | A power semiconductor device with a double gate structure |
US11257811B2 (en) | 2017-07-14 | 2022-02-22 | Cambridge Enterprise Limited | Power semiconductor device with an auxiliary gate structure |
US11336279B2 (en) | 2017-07-14 | 2022-05-17 | Cambridge Enterprise Limited | Power semiconductor device with a series connection of two devices |
DE102017125803B4 (de) * | 2017-11-06 | 2021-04-29 | Institut Für Mikroelektronik Stuttgart | Halbleiterbauelement mit einer Transistorstruktur vom Anreicherungstyp |
CN107910369A (zh) * | 2017-11-14 | 2018-04-13 | 电子科技大学 | 一种氮化镓异质结双向开关器件 |
US10630285B1 (en) | 2017-11-21 | 2020-04-21 | Transphorm Technology, Inc. | Switching circuits having drain connected ferrite beads |
US11004942B2 (en) * | 2017-12-30 | 2021-05-11 | Texas Instruments Incorporated | Controlling bi-directional switching devices |
US11862630B2 (en) * | 2018-04-23 | 2024-01-02 | Infineon Technologies Austria Ag | Semiconductor device having a bidirectional switch and discharge circuit |
US10756207B2 (en) | 2018-10-12 | 2020-08-25 | Transphorm Technology, Inc. | Lateral III-nitride devices including a vertical gate module |
WO2020191357A1 (en) | 2019-03-21 | 2020-09-24 | Transphorm Technology, Inc. | Integrated design for iii-nitride devices |
US11955478B2 (en) * | 2019-05-07 | 2024-04-09 | Cambridge Gan Devices Limited | Power semiconductor device with an auxiliary gate structure |
US11527532B2 (en) * | 2019-05-22 | 2022-12-13 | Intel Corporation | Enhancement-depletion cascode arrangements for enhancement mode III-N transistors |
FR3097682B1 (fr) * | 2019-06-19 | 2023-01-13 | St Microelectronics Gmbh | Composant monolithique comportant un transistor de puissance au nitrure de gallium |
JP7458199B2 (ja) * | 2019-09-02 | 2024-03-29 | 株式会社東芝 | 半導体装置 |
US11522079B2 (en) * | 2019-10-16 | 2022-12-06 | Tower Semiconductor Ltd. | Electrostatically controlled gallium nitride based sensor and method of operating same |
JP6679036B1 (ja) * | 2019-11-29 | 2020-04-15 | 株式会社パウデック | ダイオード、ダイオードの製造方法および電気機器 |
US11855198B2 (en) * | 2020-04-09 | 2023-12-26 | Qualcomm Incorporated | Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearity |
EP3905523B1 (en) * | 2020-04-30 | 2024-06-19 | Infineon Technologies Austria AG | Switching circuit, gate driver and method of operating a transistor device |
US11749656B2 (en) | 2020-06-16 | 2023-09-05 | Transphorm Technology, Inc. | Module configurations for integrated III-Nitride devices |
CN112119494B (zh) * | 2020-07-03 | 2023-12-26 | 英诺赛科(珠海)科技有限公司 | 半导体装置和其制作方法 |
US11316019B2 (en) | 2020-07-29 | 2022-04-26 | Globalfoundries U.S. Inc. | Symmetric arrangement of field plates in semiconductor devices |
US20230299190A1 (en) | 2020-08-05 | 2023-09-21 | Transphorm Technology, Inc. | Iii-nitride devices including a depleting layer |
JP7476062B2 (ja) * | 2020-09-15 | 2024-04-30 | 株式会社東芝 | 半導体装置 |
US12027616B1 (en) * | 2021-02-03 | 2024-07-02 | Global Communication Semiconductors, Llc | Embedded non-overlapping source field design for improved GaN HEMT microwave performance |
US11594626B2 (en) * | 2021-02-05 | 2023-02-28 | Globalfoundries U.S. Inc. | Bidirectional switches with active substrate biasing |
FR3124022A1 (fr) * | 2021-06-14 | 2022-12-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Circuit de commutation compact dote de transistors a heterojonction |
US12088210B2 (en) | 2021-06-23 | 2024-09-10 | Enphase Energy, Inc. | Gallium nitride bi-directional high electron mobility transistor in switched mode power converter applications |
JP2024523600A (ja) * | 2021-06-28 | 2024-06-28 | エンフェーズ エナジー インコーポレイテッド | 窒化ガリウム双方向高電子移動度トランジスタ基板電圧管理回路 |
US12057824B2 (en) * | 2021-06-29 | 2024-08-06 | Navitas Semiconductor Limited | Circuits and methods for controlling a voltage of a semiconductor substrate |
EP4135051A1 (en) * | 2021-08-10 | 2023-02-15 | Infineon Technologies Austria AG | Lateral iii/v heterostructure field effect transistor |
KR20240132134A (ko) * | 2021-12-31 | 2024-09-03 | 이노사이언스(쑤저우) 세미컨덕터 컴퍼니 리미티드 | 니트라이드-기반 양방향 스위칭 소자 및 이를 제조하는 방법 |
US12074588B2 (en) | 2022-07-13 | 2024-08-27 | Infineon Technologies Austria Ag | Cascode device with one or more normally-on gates |
US12057828B2 (en) | 2022-10-06 | 2024-08-06 | Infineon Technologies Austria Ag | Bidirectional power switch |
WO2024118191A1 (en) * | 2022-11-30 | 2024-06-06 | Enphase Energy, Inc. | Methods and apparatus for controlling switch gate logic in a power converter |
US12081207B2 (en) | 2023-01-20 | 2024-09-03 | Infineon Technologies Austria Ag | Passive discharge circuit for bidirectional semiconductor switches |
US20240339923A1 (en) * | 2023-04-06 | 2024-10-10 | Enphase Energy, Inc. | Gate driver |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5852559A (en) * | 1996-09-24 | 1998-12-22 | Allen Bradley Company, Llc | Power application circuits utilizing bidirectional insulated gate bipolar transistor |
JP3222847B2 (ja) * | 1997-11-14 | 2001-10-29 | 松下電工株式会社 | 双方向形半導体装置 |
AU2003263510A1 (en) * | 2002-10-29 | 2004-05-25 | Koninklijke Philips Electronics N.V. | Bi-directional double nmos switch |
WO2004070791A2 (en) * | 2003-02-04 | 2004-08-19 | Great Wall Semiconductor | Bi-directional power switch |
CA2427039C (en) * | 2003-04-29 | 2013-08-13 | Kinectrics Inc. | High speed bi-directional solid state switch |
US7245175B2 (en) * | 2003-06-30 | 2007-07-17 | Sanken Electric Co. Ltd. | Semiconductor switch |
US8174048B2 (en) * | 2004-01-23 | 2012-05-08 | International Rectifier Corporation | III-nitride current control device and method of manufacture |
US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
US7465997B2 (en) * | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
US7550781B2 (en) * | 2004-02-12 | 2009-06-23 | International Rectifier Corporation | Integrated III-nitride power devices |
JP4810072B2 (ja) * | 2004-06-15 | 2011-11-09 | 株式会社東芝 | 窒素化合物含有半導体装置 |
JP2006033723A (ja) * | 2004-07-21 | 2006-02-02 | Sharp Corp | 電力制御用光結合素子およびこの電力制御用光結合素子を用いた電子機器 |
US7288803B2 (en) * | 2004-10-01 | 2007-10-30 | International Rectifier Corporation | III-nitride power semiconductor device with a current sense electrode |
JP2006165387A (ja) * | 2004-12-09 | 2006-06-22 | Sumitomo Electric Ind Ltd | 双方向型電界効果トランジスタおよびマトリクスコンバータ |
JP2006310769A (ja) * | 2005-02-02 | 2006-11-09 | Internatl Rectifier Corp | Iii族窒化物一体化ショットキおよび電力素子 |
JP4756557B2 (ja) * | 2005-04-22 | 2011-08-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7408399B2 (en) | 2005-06-27 | 2008-08-05 | International Rectifier Corporation | Active driving of normally on, normally off cascoded configuration devices through asymmetrical CMOS |
US7164589B1 (en) * | 2005-07-11 | 2007-01-16 | International Rectifier Corporation | Bridgeless bi-directional forward type converter |
US7548112B2 (en) * | 2005-07-21 | 2009-06-16 | Cree, Inc. | Switch mode power amplifier using MIS-HEMT with field plate extension |
JP4705481B2 (ja) * | 2006-01-25 | 2011-06-22 | パナソニック株式会社 | 窒化物半導体装置 |
JP2007220895A (ja) * | 2006-02-16 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 窒化物半導体装置およびその製造方法 |
JP2008153748A (ja) * | 2006-12-14 | 2008-07-03 | Matsushita Electric Ind Co Ltd | 双方向スイッチ及び双方向スイッチの駆動方法 |
US10844908B2 (en) | 2017-10-19 | 2020-11-24 | Prescription Tillage Technology, LLC | Concentrated high-speed rigid hub |
-
2008
- 2008-09-12 EP EP15153536.6A patent/EP2887402B1/en active Active
- 2008-09-12 WO PCT/US2008/076160 patent/WO2009036266A2/en active Application Filing
- 2008-09-12 US US12/209,581 patent/US7875907B2/en active Active
- 2008-09-12 JP JP2010525023A patent/JP5767811B2/ja active Active
- 2008-09-12 EP EP08830738.4A patent/EP2188842B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2887402A2 (en) | 2015-06-24 |
WO2009036266A3 (en) | 2009-05-07 |
EP2188842A4 (en) | 2012-09-19 |
EP2887402A3 (en) | 2015-10-07 |
US7875907B2 (en) | 2011-01-25 |
EP2188842A2 (en) | 2010-05-26 |
WO2009036266A2 (en) | 2009-03-19 |
JP2010539712A (ja) | 2010-12-16 |
EP2188842B1 (en) | 2015-02-18 |
EP2887402B1 (en) | 2019-06-12 |
US20090065810A1 (en) | 2009-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5767811B2 (ja) | Iii族窒化物双方向スイッチ | |
US11217687B2 (en) | Power semiconductor device with an auxiliary gate structure | |
TWI499058B (zh) | 氮化鎵二極體及積體組件 | |
TWI596879B (zh) | 半導體裝置及使用其之系統 | |
US8526207B2 (en) | Bi-directional switch, alternating-current two-wire switch, switching power source circuit, and method of driving bi-directional switch | |
US9362903B2 (en) | Gate drivers for circuits based on semiconductor devices | |
US7719055B1 (en) | Cascode power switch topologies | |
US9007117B2 (en) | Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor | |
JP6054014B2 (ja) | 疑似ダイオードを有するiii族窒化物スイッチングデバイス | |
JP2008153748A (ja) | 双方向スイッチ及び双方向スイッチの駆動方法 | |
US11257811B2 (en) | Power semiconductor device with an auxiliary gate structure | |
JP5245157B2 (ja) | 半導体双方向スイッチング装置 | |
JP6038745B2 (ja) | ダイオード回路およびdc−dcコンバータ | |
WO2013153937A1 (ja) | 半導体ダイオード装置 | |
CN109983697B (zh) | 并联反向导通igbt和宽带隙开关的切换 | |
JP7128715B2 (ja) | 半導体リレー素子及び半導体リレーモジュール | |
JP5605664B2 (ja) | 半導体双方向スイッチング装置 | |
Hua et al. | E-mode p-FET-bridge HEMT: Toward high V TH, low reverse-conduction loss and enhanced stability |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110912 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130725 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130806 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131105 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140527 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140827 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140903 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140926 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141003 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141016 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141023 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141023 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141216 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150416 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150424 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150526 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150622 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5767811 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |