CN107154430B - 双向开关晶体管 - Google Patents
双向开关晶体管 Download PDFInfo
- Publication number
- CN107154430B CN107154430B CN201610125190.9A CN201610125190A CN107154430B CN 107154430 B CN107154430 B CN 107154430B CN 201610125190 A CN201610125190 A CN 201610125190A CN 107154430 B CN107154430 B CN 107154430B
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- CN
- China
- Prior art keywords
- layer
- ohmic contact
- schottky
- blocking
- gate driving
- Prior art date
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- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 38
- 230000004888 barrier function Effects 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 10
- 230000000903 blocking effect Effects 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- -1 aluminum silicon copper Chemical compound 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610125190.9A CN107154430B (zh) | 2016-03-04 | 2016-03-04 | 双向开关晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610125190.9A CN107154430B (zh) | 2016-03-04 | 2016-03-04 | 双向开关晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107154430A CN107154430A (zh) | 2017-09-12 |
CN107154430B true CN107154430B (zh) | 2020-06-16 |
Family
ID=59791653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610125190.9A Active CN107154430B (zh) | 2016-03-04 | 2016-03-04 | 双向开关晶体管 |
Country Status (1)
Country | Link |
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CN (1) | CN107154430B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114284355A (zh) * | 2021-12-27 | 2022-04-05 | 西交利物浦大学 | 双栅极mis-hemt器件、双向开关器件及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101246902A (zh) * | 2008-03-24 | 2008-08-20 | 西安电子科技大学 | InA1N/GaN异质结增强型高电子迁移率晶体管结构及制作方法 |
CN100533774C (zh) * | 2004-02-12 | 2009-08-26 | 国际整流器公司 | Ⅲ-氮化物双向开关 |
WO2010047016A1 (ja) * | 2008-10-21 | 2010-04-29 | パナソニック株式会社 | 双方向スイッチ |
CN103367424A (zh) * | 2012-03-29 | 2013-10-23 | 富士通株式会社 | 化合物半导体器件及其制造方法 |
CN103730491A (zh) * | 2012-10-11 | 2014-04-16 | 三星电子株式会社 | 高电子迁移率晶体管及驱动高电子迁移率晶体管的方法 |
CN104916684A (zh) * | 2015-06-11 | 2015-09-16 | 大连理工大学 | 一种纵向短开启栅极沟道型hemt器件及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7875907B2 (en) * | 2007-09-12 | 2011-01-25 | Transphorm Inc. | III-nitride bidirectional switches |
-
2016
- 2016-03-04 CN CN201610125190.9A patent/CN107154430B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100533774C (zh) * | 2004-02-12 | 2009-08-26 | 国际整流器公司 | Ⅲ-氮化物双向开关 |
CN101246902A (zh) * | 2008-03-24 | 2008-08-20 | 西安电子科技大学 | InA1N/GaN异质结增强型高电子迁移率晶体管结构及制作方法 |
WO2010047016A1 (ja) * | 2008-10-21 | 2010-04-29 | パナソニック株式会社 | 双方向スイッチ |
CN103367424A (zh) * | 2012-03-29 | 2013-10-23 | 富士通株式会社 | 化合物半导体器件及其制造方法 |
CN103730491A (zh) * | 2012-10-11 | 2014-04-16 | 三星电子株式会社 | 高电子迁移率晶体管及驱动高电子迁移率晶体管的方法 |
CN104916684A (zh) * | 2015-06-11 | 2015-09-16 | 大连理工大学 | 一种纵向短开启栅极沟道型hemt器件及其制备方法 |
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Publication number | Publication date |
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CN107154430A (zh) | 2017-09-12 |
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Effective date of registration: 20220815 Address after: 100871 No. 5, the Summer Palace Road, Beijing, Haidian District Patentee after: Peking University Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871 No. 5, the Summer Palace Road, Beijing, Haidian District Patentee before: Peking University Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |