JP2011517511A - 第1絶縁ゲート電界効果トランジスタが第2電界効果トランジスタと直列に接続された半導体デバイス - Google Patents
第1絶縁ゲート電界効果トランジスタが第2電界効果トランジスタと直列に接続された半導体デバイス Download PDFInfo
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- JP2011517511A JP2011517511A JP2011502901A JP2011502901A JP2011517511A JP 2011517511 A JP2011517511 A JP 2011517511A JP 2011502901 A JP2011502901 A JP 2011502901A JP 2011502901 A JP2011502901 A JP 2011502901A JP 2011517511 A JP2011517511 A JP 2011517511A
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- 230000005669 field effect Effects 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 9
- 210000000746 body region Anatomy 0.000 description 8
- 239000002131 composite material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 241001354791 Baliga Species 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8086—Thin film JFET's
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (13)
- 第1絶縁ゲート電界効果トランジスタ(1)が第2電界効果トランジスタ、FET、(2)と直列に接続された半導体デバイスであって、第1絶縁ゲート電界効果トランジスタの厚くドープされたドレイン接点領域(191)と電気的に接続されている厚くドープされたソース領域(19A)を前記第2電界効果トランジスタが有することと、そして更に前記第1絶縁ゲート電界効果トランジスタ(1)の前記ブレークスルー電圧は前記第2電界効果トランジスタ(2)のピンチ電圧Vpよりも高いことを特徴とする前記半導体デバイス。
- 前記第2電界効果トランジスタが、共通の厚くドープされたソース接点領域19aと並列にされているいくつかの電界効果トランジスタを含む請求項1記載のデバイス。
- 前記第1絶縁ゲート電界効果トランジスタ(1)の前記幅Wは、前記第2電界効果トランジスタ(2)の前記幅よりも少なくとも2倍大きいことを特徴とする請求項1記載のデバイス。
- 前記第2電界効果トランジスタ(2)が接合型電界効果トランジスタJFETであることを特徴とする請求項1記載のデバイス。
- 前記第2電界効果トランジスタ(2)が絶縁ゲート電界トランジスタである請求項1記載のデバイス。
- 前記第1絶縁ゲート電界効果トランジスタ(1)と直列に接続された修正されたドレイン接点領域を有する前記第2電界効果トランジスタ(2)が、絶縁ゲート・バイポーラ・トランジスタIGBTである請求項1記載のデバイス。
- 前記第1絶縁ゲート電界効果トランジスタ(1)および前記第2電界効果トランジスタ(2)が、別々の基板上に配置されていることを特徴とする前項までのいずれかの請求項記載のデバイス。
- 前記第1絶縁ゲート電界効果トランジスタ(1)および前記第2電界効果トランジスタ(2)が、共通の基盤上に配置されていることを特徴とする請求項1ないし請求項6のいずれかに記載のデバイス。
- 前記第1絶縁ゲート電界効果トランジスタ(1)および前記第2電界効果トランジスタ(2)が互いに併合され、また前記第1絶縁ゲート電界効果トランジスタ(1)の前記ドレイン接点領域(191)が前記第2トランスデータデバイス(2)のソース接点領域(19A)と同一であることを特徴とする請求項8記載のデバイス。
- 前記第1絶縁ゲート電界効果トランジスタ(1)および前記第2電界効果トランジスタ(2)の両方が、基板(10)の前記表面領域内に組み込まれていることを特徴とする請求項1記載のデバイス。
- 前記第2電界効果トランジスタが垂直に配置された複数のNトップ層とPトップ層を有し、それにより共通のソース領域を有する並列の接合型電界効果トランジスタのチャネルおよびゲートを形成するようにされたことを特徴とする請求項4記載のデバイス。
- 前記第2電界効果トランジスタが水平に配置された複数のNトップ層およびPトップ層を含み、それにより共通のソース領域を有する並列の接合型電界効果トランジスタのチャネルおよびゲートを形成するようにされたことを特徴とする請求項4記載のデバイス。
- 前記第2電界効果トランジスタ(2)は1つまたはそれ以上の接合型電界トランジスタおよび1つまたはそれ以上の絶縁ゲート電界トランジスタの組合せであって、それら全てが共通のソース接点拡散を有することを特徴とする請求項1記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0800764A SE533026C2 (sv) | 2008-04-04 | 2008-04-04 | Fälteffekttransistor med isolerad gate seriekopplad med en JFET |
SE0800764-3 | 2008-04-04 | ||
PCT/SE2009/050350 WO2009123559A1 (en) | 2008-04-04 | 2009-04-03 | A semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor |
Publications (2)
Publication Number | Publication Date |
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JP2011517511A true JP2011517511A (ja) | 2011-06-09 |
JP5449319B2 JP5449319B2 (ja) | 2014-03-19 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011502901A Active JP5449319B2 (ja) | 2008-04-04 | 2009-04-03 | 第1絶縁ゲート電界効果トランジスタが第2電界効果トランジスタと直列に接続された半導体デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US8264015B2 (ja) |
EP (2) | EP2260514A4 (ja) |
JP (1) | JP5449319B2 (ja) |
ES (1) | ES2660471T3 (ja) |
SE (1) | SE533026C2 (ja) |
WO (1) | WO2009123559A1 (ja) |
Families Citing this family (10)
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US8344472B2 (en) * | 2010-03-30 | 2013-01-01 | Freescale Semiconductor, Inc. | Semiconductor device and method |
US9105493B2 (en) * | 2012-05-21 | 2015-08-11 | United Microelectronics Corp. | High voltage metal-oxide-semiconductor transistor device and layout pattern thereof |
US20130320445A1 (en) * | 2012-06-04 | 2013-12-05 | Ming-Tsung Lee | High voltage metal-oxide-semiconductor transistor device |
SE537230C2 (sv) | 2013-05-16 | 2015-03-10 | Klas Håkan Eklund Med K Eklund Innovation F | Bipolär transistorförstärkarkrets med isolerad gate |
US9543290B2 (en) | 2014-01-23 | 2017-01-10 | International Business Machines Corporation | Normally-off junction field-effect transistors and application to complementary circuits |
US9269808B2 (en) | 2014-02-21 | 2016-02-23 | Vanguard International Semiconductor Corporation | Method and apparatus for power device with depletion structure |
US9306034B2 (en) * | 2014-02-24 | 2016-04-05 | Vanguard International Semiconductor Corporation | Method and apparatus for power device with multiple doped regions |
US9608107B2 (en) | 2014-02-27 | 2017-03-28 | Vanguard International Semiconductor Corporation | Method and apparatus for MOS device with doped region |
SE542311C2 (en) | 2018-03-16 | 2020-04-07 | Klas Haakan Eklund Med Firma K Eklund Innovation | A semiconductor device comprising a low voltage insulated gate field effect transistor connected in series with a high voltage field effect transistor |
US11031480B2 (en) | 2019-09-13 | 2021-06-08 | K. Eklund Innovation | Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor |
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2008
- 2008-04-04 SE SE0800764A patent/SE533026C2/sv unknown
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2009
- 2009-04-03 US US12/667,088 patent/US8264015B2/en active Active
- 2009-04-03 EP EP09726572A patent/EP2260514A4/en not_active Ceased
- 2009-04-03 ES ES15161312.2T patent/ES2660471T3/es active Active
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Publication number | Publication date |
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JP5449319B2 (ja) | 2014-03-19 |
SE0800764L (sv) | 2009-10-05 |
ES2660471T3 (es) | 2018-03-22 |
EP2916359B1 (en) | 2017-12-13 |
EP2260514A4 (en) | 2012-11-21 |
EP2260514A1 (en) | 2010-12-15 |
SE533026C2 (sv) | 2010-06-08 |
US20100327330A1 (en) | 2010-12-30 |
US8264015B2 (en) | 2012-09-11 |
WO2009123559A1 (en) | 2009-10-08 |
EP2916359A1 (en) | 2015-09-09 |
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