TWI499058B - 氮化鎵二極體及積體組件 - Google Patents

氮化鎵二極體及積體組件 Download PDF

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TWI499058B
TWI499058B TW097135524A TW97135524A TWI499058B TW I499058 B TWI499058 B TW I499058B TW 097135524 A TW097135524 A TW 097135524A TW 97135524 A TW97135524 A TW 97135524A TW I499058 B TWI499058 B TW I499058B
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gate
transistor
drain
group iii
diode
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TW200924201A (en
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Chang Soo Suh
James Honea
Umesh Mishra
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Transphorm Inc
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Description

氮化鎵二極體及積體組件
本發明所揭示之內容係關於氮化鎵為主的半導體。
由於氮化鎵(Gallium nitride,GaN)元件可攜帶大量電流並可支援高電壓，因而為III-V族類型元件的氮化鎵半導體元件，現正新興成為一引人注目之高功率半導體元件的選擇。這類元件亦能提供極低電阻與快速切換時間。高電子遷移率電晶體(High Electron Mobility Transistor,HEMT)為一種能以GaN材料為主進行製造的高功率半導體元件。如此所使用的，適用於電晶體的GaN材料可包含二級、三級或四級材料，其係基於將AlInGaN、Al、In與Ga之III族材料的量從0至1進行改變，或者調整AlX Iny Ga1-x-y N，其中x+y=1。此外，GaN材料可包含不同的GaN極性，例如鎵極性(Ga-polar)、氮極性(N-polar)、半極性(semi-polar)或非極性。N面(N-face)材料可從氮極性或半極性GaN獲得。
GaN高電子遷移率電晶體元件可包含一具有至少兩III族氮化物層形成於其上的III族氮化物半導體主體。形成於主體或一緩衝層上的不同材料會造成該些層具有不同的能帶隙。在相鄰III族氮化物層中的不同材料亦會造成極化，進而在靠近兩層接合處，尤其是在具有較窄能帶隙之層中，提供一傳導的、二維電子氣體(two-dimensional electron gas,2DEG)區。元件亦包含一形成第一接觸的肖特基電極(schottky electrode)(即一閘極)，以及於閘極任一側的歐姆源極與汲極電極。在閘極與汲極間以及在閘極與源極間，能使電流傳導通過元件的區域乃為進入區。
用於功率電路中的積體組件常包含電晶體與二極體的結合。例如，可使用具有反平行(anti-parallel)(或返馳式(Flyback))二極體的電晶體。由於功率元件中GaN元件的潛在效益，故仍需開發出改良的GaN元件與積體組件。
下文係描述用於功率電子應用(power electronics)之氮化鎵元件。
於部份實施例中，描述一種二極體元件，其包含一增強型氮化鎵電晶體，該增強型氮化鎵電晶體具有一閘極、一汲極以及一源極，其中該閘極係連接至該汲極，以使該元件如一二極體運作。
於部份實施例中，描述一種積體開關電晶體-二極體元件。該元件包含一基板、一於該基板上之氮化鎵開關電晶體以及一飛輪二極體，該飛輪二極體係於該基板上並耦合至該開關電晶體。
於部份實施例中，描述一種多用途積體氮化鎵元件。該元件包含一第一電晶體與一第二電晶體，其係共同提供為一五終端元件。該第一電晶體與該第二電晶體為以增強型模式運作的氮化鎵電晶體。用於該第一電晶體的場板係朝該第一電晶體的一終端偏設，以及用於該第二電晶體的場板係朝該第二電晶體的一終端偏設。
於部份實施例中，係描述一種積體開關-二極體元件。該元件包含一增強型氮化鎵開關電晶體、一飛輪二極體以及一場板。該飛輪二極體係耦合至該開關電晶體，其中該飛輪二極體為一具有一至少600V反向阻斷電壓(reverse blocking voltage)以及一低於3V順向壓降的電晶體，並具有一閘極連接至一汲極。該場板電性連接至該閘極並朝該源極偏移。
此述元件之實現可包含一或多個下列特徵。該元件為一側向功率元件。與靠近該源極相比，該閘極更靠近該汲極。一場板可電性連接至該閘極。該場板朝該源極延伸。該場板在該元件之一主動區中直接連接至該閘極。該場板與該元件之一主動區內的該閘極相隔絕。該電晶體之該臨界電壓為+1V。該電晶體具有一至少600V的反向阻斷電壓，例如至少900V或至少1200V。該順向壓降可在0.5至3V間。該順向壓降可少於3V。該內部阻障係大於0.5eV。該飛輪二極體可耦合至電晶體，以提供一越過該電晶體的分流路徑(shunt path)。該電晶體可為一增強型電晶體。該二極體係一包含一閘極，一源極以及一汲極的電晶體，且該閘極係連接至該汲極。與靠近該源極相比，該閘極更靠近該汲極。一場板可電性連接至該閘極。該場板可朝該源極延伸。在該閘極-汲極連接電晶體的一主動區內，該場板可直接電性連接至該閘極。在該閘極-汲極連接電晶體的一主動區內，該場板可與該閘極相隔絕。該二極體可為一肖特基二極體。該二極體可為一金屬-絕緣體-半導體二極體。該二極體可為一p-n接面二極體。該元件可為一側向功率元件。該元件可為一功率開關電晶體。
此述元件之實施例可提供一或多個下述優點。該二極體的導通電壓或該電晶體或元件的臨界電壓為可調的。可形成具有較習知二極體中更低導通電壓與更低反向漏電流的二極體。若使用增強型元件，在0V汲極-閘極電壓下不需額外的負偏壓來關閉元件。可調整二極體的內部阻障，其提供順向電壓，以最大化導通電流與截止電流比。即，可同時最佳化二極體的反向與順向性能。
可於單一基板上形成多個組件，進而形成具有緊密佈局與減小半導體區的元件。因此，可產生較小的組件。可形成具有少數組件的元件。電晶體可為較易與其他組件整合以及連接的側向元件。由於可輕易製作閘極-汲極連接，此連接於封裝層級下不需於晶片外部。亦可獲得較平面型的模組封裝拓樸構造。
此述構造與方法可產生低損耗與快速的元件。與習知元件相比，其較不昂貴。此外，其適合與高電壓功率元件一同使用。
本發明之一或多個實施例的細節，將參照附圖與下文實施方式進行描述。本發明其他特徵、目的與優點將顯見於實施方式、圖式與申請專利範圍。
當在功率電路中時，功率開關電晶體典型使用一反平行二極體(亦稱為飛輪二極體(free-wheeling diode)或緩衝二極體(snubber diode))。當關閉功率開關電晶體，藉由誘導負載會產生大量的反馳電壓。飛輪二極體的角色乃藉由開啟並傳導電流以鉗制反馳電壓(fly-back voltage)。此可防止對電晶體與整體電路造成損害。二極體與積體功率開關電晶體以及二極體可由GaN材料形成，於此作進一步描述。
參照第1-3圖，一閘極-汲極連接增強型或常關型電晶體10係作為一快速開關二極體，例如肖特基型快速開關二極體。電晶體10為GaN為主的場效電晶體(field effect transistor,FET)，其包含源極15與汲極30，兩者皆在電晶體10的主動區40內。於部分實施例中，主動區40包含了源極15與汲極30所在之區域，但並未橫向延伸超過源極15與汲極30所在之區域。閘極墊20藉由連接器35的第一部分以及藉由閘極指25，電性連接至汲極30，而閘極指25進而電性連接到連接器35的第二部分。源極15、汲極30、閘極指25、閘極墊20(閘極指25連同閘極墊20乃為閘極結構22)與連接器35係形成於位在基板50上的主動半導體材料55上。於部分實施例中，僅閘極指25藉由連接器35直接電性連接至汲極30。於其他實施例中，僅閘極墊20藉由連接器35直接電性連接至汲極30。隔絕區60將主動半導體材料55與基板上的其他組件隔離。於部份實施例中，隔絕區60由佈植隔離(implant isolations)或平臺隔離(mesa isolations)所構成，於該處隔絕區60係被移除。
如所示，在第2圖中，閘極結構22與汲極30乃在元件之主動區40的外側相連。於替代實施例中，閘極-汲極連接在元件的主動區40內，或既在元件的主動區40內又在外側，如元件的拓樸構造所允許的。
連接閘極與汲極能使電晶體如二極體般運作，當適當地與另一電晶體交連時，其可如飛輪二極體般作用。於閘極-汲極連接源件10中，下方電晶體的臨界電壓實質上為二極體的導通電壓。當閘極電壓Vg與汲極電壓低於元件的臨界電壓Vt時，(Vg=Vd)<Vt，元件為關狀態。任何高達原電晶體之閘極-源極區崩潰電壓Vgs的電壓，則被阻絕。在(Vg=Vd)>Vt下，由於閘極與汲極係被迫使在相同的電壓(Vg=Vd)，且電流以指數方式增加至近乎臨界值，且此後具有一相對於外加電壓的冪次，故電晶體實際上如二極體般運作。
於部份實施例中，電晶體為GaN增強型或常關型電晶體。由於在無偏壓施加至閘極時不希望開啟高電壓元件，增強型電晶體在功率電子應用中是有用的。可藉由改變增強型元件的臨界電壓來調整二極體的順向電壓。此述電晶體為功率電晶體，其能夠阻絕至少600V，例如至少900V或至少1200V。GaN提供高崩潰電壓寬能帶隙之半導體二極體。在閘極-汲極連接電晶體-二極體，且具有一額外的作為一般功率電晶體開關之電晶體的積體組件中，閘極-汲極連接電晶體-二極體的臨界電壓結合組件的導通電阻，決定了二極體的順向電壓。二極體的臨界電壓獨立於其他電晶體的臨界電壓進行最佳化。
參照第4-7圖，可以多種方式形成增強型GaN電晶體或常關型GaN電晶體，並在2007年9月17日所申請之共同申請案美國序號11/856,687中作進一步敘述，為所有目的其以引用方式併入本文。閘極下之HEMT GaN元件的能帶圖顯示關於費米能階(Fermi level(EF ))的傳導帶(conduction band(Ec))與價帶(valence band(EV ))。在能帶圖中，在傳導帶EC 與費米能階EF 間的最小距離90，而此未連接的特性使得閘極指出元件的內部阻障。
參照第4圖，p型AlGaN蓋層360可形成於在閘極與2DEG區間的N面(N-face)元件上，以在閘極區下產生具有大於1.5eV之內部阻障的元件。此係為具有一降低斷態漏電流(Off-State Leakage)的常關型元件作準備。參照第5圖，多層AlGaN蓋層360’可形成於在閘極與2DEG區間的N面元件上，以在閘極區下產生具有大於1.4eV之內部阻障的元件。參照第6圖，係描述一元件具有一顯露的p型GaN層622於閘極670及p型Alx GaN蓋層660相對側上，可產生具有大於0.9eV內部阻障的元件。參照第7圖，在閘極下、元件的相對側上顯露Alx GaN層722之一區域中，及對應於閘極的側向位置已以氟電漿進行處理的元件，可產生具有大於0.8eV之內部阻障的元件。參照第4-7圖各圖，在傳導帶EC 靠近費米能量EF 的區域處，最小能量差90，決定了元件的內部阻障。
回顧第2-3圖，於部份實施例中，閘極結構22較源極15更靠近汲極30放置。在習知電晶體中，閘極結構22一般係較汲極30更靠近源極15。然而，在閘極-汲極連接電晶體作為二極體的元件中，有效的閘極-汲極電壓為0，而閘極結構22係朝汲極30偏設。增加閘極-源極間隔能使如二極體作用的元件阻絕高反向電壓。
參照第8圖，於部份實施例中，閘極-汲極連接電晶體10’包含場板75。與GaN電晶體一同使用的場板75可例如藉由降低dc-rf消散(dc-rf dispersion)與增加崩潰電壓，來提升電晶體的性質。因為閘極與汲極間的區域不需要阻絕電壓，且閘極-源極區易受到較高電場，即當抵擋二極體的反向電壓時的情況，故場板75主要朝源極15延伸。這與形成標準電晶體形式中之場板的方法相反，其電晶體場板大體上朝汲極側偏移，且若有的話，與源極側些許重疊。於部份實施例中，與靠近汲極30之場板75的一相對側邊相較，場板75的一側邊更靠近源極15。於部份實施例中，從閘極邊緣至源極側上場板邊緣之場板的整體範圍，係大於從在閘極之汲極側上閘極的相對邊緣之場板的範圍。例如，若源極-閘極間隔為10微米，閘極-汲極間隔為2微米，而場板自閘極邊緣朝源極側延伸3微米，則場板幾何上較靠近汲極，但具場板結構之元件面積在閘極-源極區中，為3微米，且在閘極-汲極區中為更少或者沒有。此即未與閘極重疊的部份場板在閘極之源極側上，係較閘極之汲極側上來得大。於部份實施例中，場板自閘極之邊緣朝源極至少為0.5微米，例如介於約2至5微米。於部份實施例中，場板75不僅僅偏移，而是整個場板朝向源極。
參照第9圖，於部份實施例中，場板75係沉積在介電間隙層上，且未與元件之主動區40內的閘極指25直接接觸。而絕緣層70覆蓋源極15、閘極結構22與汲極30。絕緣體可為氮化矽材料或其他適合的能與GaN元件相容的絕緣材料。場板75靠近閘極指25並與閘極指25重疊，但絕緣層70將場板75自主動區40內的閘極結構22電性隔絕。因此，場板75與閘極結構22間的連接在元件之主動區40的外部。參照第10圖，於替代實施例中，場板與閘極共構為一體。即，閘極結構22或閘極指25乃與主動區40內的場板75直接接觸。於部份實施例中，場板75朝源極15與汲極30兩者橫向延伸過閘極指25的邊緣。
如第9圖或第10圖所示，若任何元件之閘極結構與場板75於主動區的外側、內側，或者既在外側又在內側直接接觸，閘極與汲極乃於基板50的相同側上，因而元件為一側向元件。這能使閘極與汲極間的連接在元件之一側上，而不需盤繞該元件，或使用穿過基板所形成之介層洞的連接。更具體地，由於元件為側向元件，閘極-汲極連接可於晶片內而非如一般側向元件之晶片封裝需於外部製造。
參照第11圖，無閘極連接至汲極之GaN為主的功率電晶體，可用於積體或單晶元件(monolithic device)中，其包含與二極體連接的GaN電晶體，該二極體例如為以GaN材料為主的飛輪二極體(如p-n接面二極體或肖特基二極體)。
電晶體與二極體兩者皆形成在相同的基板上。由於電晶體與二極體在相同的基板上，故可形成緊密型功率開關模組。此述閘極-汲極連接電晶體亦可作為積體組件中，元件的二極體部份，例如在第12圖中所繪示者。於此，閘極-汲極連接電晶體替代了第11圖中的GaN二極體。
可複製第2、3圖中所呈現的電晶體或二極體單位晶胞，並用於積體元件中。參照第13圖，積體功率開關與飛輪二極體元件110包含一或多組含有開關電晶體150，以及反平行或飛輪二極體155的單位晶胞。各二極體155具有藉由電性連接135連接至汲極130的閘極指125。各開關電晶體150的源極115係藉由二極體-電晶體連接匯流排160或藉由介電支撐橋(dielectrically supported bridge)，電性連接至二極體155的汲極130。同樣地，每一開關電晶體150的各汲極130則電性連接至二極體155的源極。於部份實施例中，例如在一具有多個二極體與多個電晶體的元件中，將每一二極體單位晶胞的源極連接在一起，以及將每一二極體單位晶胞的汲極連接在一起，而連接的方式可例如藉由一橋或層間金屬化層。於這些或其他實施例中，所有二極體155的閘極指125乃電性連接在一起。
參照第14與15圖，包含開關電晶體與作為二極體之閘極-汲極連接電晶體的積體GaN為主之元件，可使用二極體來分流負載。於部份實施例中，在相同元件中各別的源極、汲極及/或閘極係藉由一橋或層間金屬化連接。舉例而言，開關電晶體150中所有的源極115可相連在一起，而開關電晶體150的單一源極接觸可用以接觸電晶體元件。開關電晶體的所有汲極130可相連在一起以形成負載之一終端。同樣地，二極體的所有源極130可相連在一起以形成負載之第二終端。依據所要求的電壓、頻率、電流與其他額定值(ratings)，可改變開關電晶體150與二極體155兩者的間隔與幾何結構。
於部份實施例中，增強型電晶體具有一或多個下述特徵：+2V臨界電壓、600V或1200V反向阻斷能力(reverse blocking capability)、10A-50A的平均額定電流(average current rating)、約10-500mA/mm的電流密度、與<10mohm-cm2 的導通電阻。閘極-汲極連接增強型電晶體能夠如電晶體般承受相同的反向電壓，但電流能力在20%至100%電晶體電流間變化。於部份實施例中，二極體可在約10-300mA/mm FET同等電流密度(FET equivalent current density)下操作。於部份實施例中，二極體呈現出約0.5-3V的順向壓降。
功率開關組件與其整合可應用在多種功率電子電路，包含但並不限於建構塊(Building Blocks)，例如半橋接、全橋接、降壓(buck)/升壓(boost)/同步(synchronous)功率轉換器(converters)/變流器(inverters)與電動機驅動器(motor drives)。舉例而言，典型三相交流電機驅動器(3-phase AC motor drive)的圖式乃顯示於第16圖中，其在各相中具有一半橋接構造175、180、185。此述之開關電晶體與積體飛輪二極體可成對使用以形成半橋結構。於部份實施例，六個組件(即六個電晶體與六個二極體)全可整合於一單一晶片中，例如在提供用於元件間適當的隔絕之後。更具體地，電晶體與二極體乃形成於單一基板上，以形成單晶元件。於部份實施例中，部份小量百分比的元件電流，例如約1%，可分接(tapped off)以測量元件的電流，作為電流偵測。
參照第17圖，由兩GaN電晶體230、240所組成的半橋接提供了可規劃式元件(configurable device)200。半橋接為五終端205、210、215、220、225元件。於此構造中，半橋接乃作為半橋接組件，例如第16圖中三相應用中的一相。二極體可個別地與半橋接連接或整合。藉由連接外部終端210、215，元件200的這部分作為第二側開關，如第13圖所示。這是由於電晶體230中之一者變成了閘極-汲極連接二極體，即終端215作為在終端210連接至閘極的汲極。若終端210、215在左側不相連，終端215則為如在半橋接中電晶體230的源極與電晶體240的汲極。於部份實施例中，場板(未繪示)為電晶體230朝終端205偏移，且為電晶體240朝終端215偏移。
參照第18-26圖，其係描述形成III族氮化物元件的例示方法。參照第18圖，GaN層320、AlGaN層330、GaN層340與SiNx 層350乃磊晶成長於基板310上。於部份實施例中，在完成半導體層的磊晶成長後，再進行SiNx 層350沉積，而非其自身進行磊晶成長。SiNx 層350作為蓋層。參照第19圖，對SiNx 層350與GaN層340進行蝕刻以定義出閘極區355。參照第20圖，p型AlGaN層360係選擇地成長於閘極區355中，或再成長，如一般所描述的。SiNx 層350在成長步驟期間係作為遮罩。於部份實施例中，使用一替代的合適遮罩材料。參照第21圖，再次蝕刻SiNx 層350以露出源極與汲極接觸區370、375。參照第22圖，歐姆接觸係設置在接觸區370、375中，以形成源極380與汲極385。接觸可由以Ti/Al/Ni/Au為主的金屬化形成。參照第23圖，藉由平台隔離，即藉由從包含源極380、汲極385與閘極區355的元件區周圍，移除部份的GaN層320、AlGaN層330、GaN層340與SiNx 層350，將單一元件乃從附近的元件隔離出來。或者，使用佈植隔離，其中在元件之主動區外的部份或待隔離的區域係以給予其高阻抗的合適離子進行佈植。
參照第24圖，第二SiNx 層390係沉積在SiNx 層350上。層390與350可以相同類型的SiNx 形成，或可為不同類型的SiNx 材料。該些層可具有相同或不同的厚度，且可利用相同或不同的技術進行沉積。參照第25圖，在閘極區中，蝕刻SiNx 層350、390。於部份實施例中，經蝕刻區域的上部份具有一斜側壁。參照第26圖，接著沉積閘極金屬，例如以Ni/Au為主的金屬化，以形成閘極395。可使用其他III族氮化物材料、方法與幾何結構來代替前述材料、方法與結構，以獲得類似的元件。
使用GaN HEMT作為二極體提供了獨立的參數來控制順向電壓與反向電流。在習知二極體中，由於決定順向電壓的阻障亦支配了反向電流，故低順向電壓會造成高反向電流。同樣地，若二極體係為低反向電流而設計，其亦呈現高順向電壓。由於閘極-汲極連接電晶體為三終端元件，可控制參數以降低順向壓降與反向漏電流。電晶體或元件的導通電壓為可調的。可形成具有較習知二極體中更低導通電壓與更低反向漏電流之結合的二極體。若使用增強型元件，在0V汲極-閘極電壓下不需額外的負偏壓來關閉(turn-off)元件。二極體的內部阻障與電晶體之閘極長度相關，而其設計可影響電場，因此可調整以最大化導通電流與截止電流比。即，可同時最佳化二極體的反向與順向性能。
可於單一基板上形成多個GaN為主的組件，進而形成具有緊密佈局與減小半導體區的元件。因此，可產生較小的組件。可形成具有少數組件的元件。電晶體可為較易與其他組件整合以及連接的側向元件。由於可輕易製作閘極-汲極連接，在封裝層級下此連接不需在晶片外部。亦可獲得較平面型的模組封裝拓樸構造。
上文已描述本發明數個實施例。然而，當理解在不背離本發明之精神與範圍下，其可進行各種修飾。據此，其他實施例係落於下述申請專利範圍所界定者中。
10．．．電晶體
10’．．．閘極-汲極連接電晶體
15．．．源極
20．．．閘極墊
22．．．閘極結構
25．．．閘極
30‧‧‧汲極
35‧‧‧連接器
40‧‧‧主動區
50‧‧‧基板
55‧‧‧半導體材料
60‧‧‧隔絕區
70‧‧‧絕緣層
75‧‧‧場板
90‧‧‧最小距離
110‧‧‧二極體元件
115‧‧‧源極
125‧‧‧閘極指
130‧‧‧汲極
135‧‧‧電性連接
150‧‧‧開關電晶體
155‧‧‧二極體
160‧‧‧二極體-電晶體連接匯流排
175‧‧‧半橋接構造
180‧‧‧半橋接構造
185‧‧‧半橋接構造
200‧‧‧可規劃式元件
205‧‧‧終端
210‧‧‧終端
215‧‧‧終端
220‧‧‧終端
225‧‧‧終端
230‧‧‧電晶體
240‧‧‧電晶體
310‧‧‧基板
320‧‧‧GaN層
330‧‧‧AlGaN層
340‧‧‧GaN層
350‧‧‧SiNx 層
355‧‧‧閘極區
360‧‧‧p型AlGaN層
360’‧‧‧多層AlGaN層
370‧‧‧接觸區
375‧‧‧接觸區
380‧‧‧源極
385‧‧‧汲極
390‧‧‧第二SiNx 層
395‧‧‧閘極
622‧‧‧p型GaN層
660‧‧‧p型Alx GaN蓋層
670‧‧‧閘極
722‧‧‧Alx GaN層
EC ‧‧‧傳導帶
EF ‧‧‧費米能階
EV ‧‧‧價帶
第1圖作為二極體之閘極-汲極連接電晶體的電路符號圖。
第2圖為閘極-汲極連接電晶體的概要平面圖。
第3圖為電晶體的概要剖面圖。
第4-7圖不同電晶體結構之HEMT GaN電晶體的閘極區下的能帶圖，亦概略繪示。
第8圖具有一場板之閘極-汲極連接電晶體的概要平面圖。
第9-10圖具有一場板之電晶體的概要剖面圖。
第11圖為連接至一二極體之電晶體的電路符號圖。
第12圖為連接至閘極-汲極連接電晶體之電晶體的電路符號圖，其作用如二極體。
第13圖為積體功率-開關與飛輪二極體元件的概要平面圖。
第14圖為連接至一二極體之電晶體的電路符號圖。
第15圖為具有電晶體連接至二極體之元件的概要平面圖。
第16圖為積體元件的電路符號圖。
第17圖為可規劃式元件的電路符號圖。
第18-26圖概要地繪示形成一例示III族氮化物元件的步驟。
於不同的圖示中，相似的元件符號代表類似的部件。
10．．．電晶體
15．．．源極
20．．．閘極墊
22．．．閘極結構
25．．．閘極
30．．．汲極
35．．．連接器
40．．．主動區

Claims (14)

  1. 一種二極體元件，包含：一增強型氮化鎵電晶體，該增強型氮化鎵電晶體具有一閘極、一汲極以及一源極，其中該增強型氮化鎵電晶體之該閘極係連接至該汲極，以使該增強型氮化鎵電晶體如一二極體運作，該增強型氮化鎵電晶體包含一III族氮化物半導體本體，該III族氮化物半導體本體包括一第一III族氮化物層、一第二III族氮化物層以及一二維電子氣體(two-dimensional electron gas)，該第二III族氮化物層具有比該第一III族氮化物層更窄之一能隙，該二維電子氣體在該第二III族氮化物層中靠近該第一III族氮化物層與該第二III族氮化物層之一接合處；以及一場板，該場板電性連接至該閘極。
  2. 如申請專利範圍第1項所述之二極體元件，其中該二極體元件為一側向功率元件。
  3. 如申請專利範圍第1項所述之二極體元件，其中與靠近該源極相比，該閘極更靠近該汲極。
  4. 如申請專利範圍第3項所述之二極體元件，其中該場板朝該源極延伸。
  5. 如申請專利範圍第3項所述之二極體元件，其中該場板與該增強型氮化鎵電晶體之一主動區內的該閘極相隔絕。
  6. 如申請專利範圍第1項所述之二極體元件，其中該增強型氮化鎵電晶體具有至少600V的一反向阻斷電壓。
  7. 如申請專利範圍第1項所述之二極體元件，其中該增強型氮化鎵電晶體具有至少1200V的一反向阻斷電壓。
  8. 如申請專利範圍第1項所述之二極體元件，其中該二極體之一順向壓降係介於0.5至3V間。
  9. 如申請專利範圍第1項所述之二極體元件，其中該增強型氮化鎵電晶體之該閘極下之一內部阻障係大於0.5eV。
  10. 如申請專利範圍第1項所述之二極體元件，其中該閘極直接連接至該汲極。
  11. 如申請專利範圍第1項所述之二極體元件，該增強型氮化鎵電晶體具有一臨界電壓，其中該二極體之一導通電壓等於該臨界電壓。
  12. 如申請專利範圍第1項所述之二極體元件，其中該閘 極與該汲極在操作中係為相同電壓。
  13. 一種二極體元件，包含：一增強型氮化鎵電晶體，該增強型氮化鎵電晶體具有一閘極、一汲極以及一源極，其中該增強型氮化鎵電晶體之該閘極係電性連接至該汲極，而在操作中該閘極與該汲極具有一相同電壓，以使該增強型氮化鎵電晶體如一二極體運作，該增強型氮化鎵電晶體包含一III族氮化物半導體本體，該III族氮化物半導體本體包括一第一III族氮化物層、一第二III族氮化物層以及一二維電子氣體(two-dimensional electron gas)，該第二III族氮化物層具有比該第一III族氮化物層更窄之一能隙，該二維電子氣體在該第二III族氮化物層中靠近該第一III族氮化物層與該第二III族氮化物層之一接合處；以及一場板，該場板電性連接至該閘極。
  14. 一種二極體元件，包含：一增強型氮化鎵電晶體，該增強型氮化鎵電晶體具有一閘極、一汲極以及一源極，其中該增強型氮化鎵電晶體之該閘極係電性連接至該汲極，而在操作中應用至該閘極之一閘極電壓造成與該閘極電壓相同的一汲極電壓被應用至該汲極，該增強型氮化鎵電晶體包含一III族氮化物半導體 本體，該III族氮化物半導體本體包括一第一III族氮化物層、一第二III族氮化物層以及一二維電子氣體(two-dimensional electron gas)，該第二III族氮化物層具有比該第一III族氮化物層更窄之一能隙，該二維電子氣體在該第二III族氮化物層中靠近該第一III族氮化物層與該第二III族氮化物層之一接合處；以及一場板，該場板電性連接至該閘極，其中與靠近該源極相比，該閘極更靠近該汲極。
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