JP2009081379A - Iii族窒化物半導体発光素子 - Google Patents
Iii族窒化物半導体発光素子 Download PDFInfo
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- JP2009081379A JP2009081379A JP2007251167A JP2007251167A JP2009081379A JP 2009081379 A JP2009081379 A JP 2009081379A JP 2007251167 A JP2007251167 A JP 2007251167A JP 2007251167 A JP2007251167 A JP 2007251167A JP 2009081379 A JP2009081379 A JP 2009081379A
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- Prior art keywords
- layer
- light
- light emitting
- group iii
- iii nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
【解決手段】本発明は、基板1と、その基板1の表面上に設けたガリウムを含むIII族窒化物半導体材料からなる障壁層5a及び井戸層5bを備えた多重量子井戸構造の発光層5とを具備したIII族窒化物半導体発光素子において、多重量子井戸構造をなす井戸層5bの各々が、アクセプター不純物が添加され、互いに層厚を異にしている、障壁層5aと同一の伝導形を呈するIII族窒化物半導体層からなるものである。
【選択図】図1
Description
5 多重量子井戸構造の発光層
5a 障壁層
5b 井戸層
10 III族窒化物半導体発光素子
101 基板
101a 基板の表面
102 窒化アルミニウム層
103 窒化アルミニウム・ガリウム混晶層
104 n形GaN層
105 発光層
105a 障壁層
105b 井戸層
106 p形GaN層
107 n形オーミック電極
108 p形オーミック電極
204 n形GaN層
205 発光層
205a 障壁層
205b 井戸層
303 窒化アルミニウム・ガリウム混晶層
305 発光層
305a 障壁層
305b 井戸層
306 p形GaN層
307 n形オーミック電極
307a n形オーミック電極を形成する領域
308 p形オーミック電極
309 台座電極
Claims (4)
- 基板と、その基板の表面上に設けたガリウムを含むIII族窒化物半導体材料からなる障壁層及び井戸層を備えた多重量子井戸構造の発光層とを具備したIII族窒化物半導体発光素子において、
上記多重量子井戸構造をなす井戸層の各々は、障壁層と同一の伝導形を呈するIII族窒化物半導体層からなり、アクセプター不純物が添加され、互いに層厚を異にしている、
ことを特徴とするIII族窒化物半導体発光素子。 - 上記多重量子井戸構造をなす井戸層の各々は、基板の表面側より発光層からの発光を取り出す方向に向けて、層厚が順に薄くなっている、請求項1に記載のIII族窒化物半導体発光素子。
- 上記多重量子井戸構造をなす井戸層の各々は、アクセプター不純物の原子濃度が互いに異なっている、請求項1または2に記載のIII族窒化物半導体発光素子。
- 上記基板は珪素単結晶からなり、上記多重量子井戸構造をなす井戸層の各々は、アクセプター不純物としてマグネシウムが故意に添加されている、請求項1乃至3の何れか1項に記載のIII族窒化物半導体発光素子。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007251167A JP2009081379A (ja) | 2007-09-27 | 2007-09-27 | Iii族窒化物半導体発光素子 |
US12/680,705 US8389975B2 (en) | 2007-09-27 | 2008-08-28 | Group III nitride semiconductor light-emitting device |
CN2008801088582A CN101809763B (zh) | 2007-09-27 | 2008-08-28 | Ⅲ族氮化物半导体发光元件 |
PCT/JP2008/065914 WO2009041237A1 (ja) | 2007-09-27 | 2008-08-28 | Ⅲ族窒化物半導体発光素子 |
EP08834447A EP2200100A1 (en) | 2007-09-27 | 2008-08-28 | Iii nitride semiconductor light emitting element |
TW097136566A TW200924246A (en) | 2007-09-27 | 2008-09-24 | Group III nitride semiconductor light emission element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007251167A JP2009081379A (ja) | 2007-09-27 | 2007-09-27 | Iii族窒化物半導体発光素子 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008308203A Division JP2009088553A (ja) | 2008-12-03 | 2008-12-03 | Iii族窒化物半導体層、発光層およびiii族窒化物半導体発光素子 |
JP2008332446A Division JP5263881B2 (ja) | 2008-12-26 | 2008-12-26 | Iii族窒化物半導体発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009081379A true JP2009081379A (ja) | 2009-04-16 |
Family
ID=40511127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007251167A Pending JP2009081379A (ja) | 2007-09-27 | 2007-09-27 | Iii族窒化物半導体発光素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8389975B2 (ja) |
EP (1) | EP2200100A1 (ja) |
JP (1) | JP2009081379A (ja) |
CN (1) | CN101809763B (ja) |
TW (1) | TW200924246A (ja) |
WO (1) | WO2009041237A1 (ja) |
Cited By (4)
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EP2237272A2 (en) | 2009-03-30 | 2010-10-06 | Sony Corporation | Signal processing apparatus, signal processing method, and program |
WO2012053331A1 (ja) * | 2010-10-19 | 2012-04-26 | 昭和電工株式会社 | Iii族窒化物半導体素子、多波長発光iii族窒化物半導体層及び多波長発光iii族窒化物半導体層の形成方法 |
WO2016002419A1 (ja) * | 2014-07-04 | 2016-01-07 | シャープ株式会社 | 窒化物半導体発光素子 |
WO2019093056A1 (ja) * | 2017-11-09 | 2019-05-16 | 信越半導体株式会社 | 半導体型蛍光体 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2237272A2 (en) | 2009-03-30 | 2010-10-06 | Sony Corporation | Signal processing apparatus, signal processing method, and program |
WO2012053331A1 (ja) * | 2010-10-19 | 2012-04-26 | 昭和電工株式会社 | Iii族窒化物半導体素子、多波長発光iii族窒化物半導体層及び多波長発光iii族窒化物半導体層の形成方法 |
WO2016002419A1 (ja) * | 2014-07-04 | 2016-01-07 | シャープ株式会社 | 窒化物半導体発光素子 |
JPWO2016002419A1 (ja) * | 2014-07-04 | 2017-04-27 | シャープ株式会社 | 窒化物半導体発光素子 |
WO2019093056A1 (ja) * | 2017-11-09 | 2019-05-16 | 信越半導体株式会社 | 半導体型蛍光体 |
JP2019085519A (ja) * | 2017-11-09 | 2019-06-06 | 信越半導体株式会社 | 半導体型蛍光体 |
US11898078B2 (en) | 2017-11-09 | 2024-02-13 | Shin-Etsu Handotai Co., Ltd. | Semiconductor phosphor |
Also Published As
Publication number | Publication date |
---|---|
TW200924246A (en) | 2009-06-01 |
WO2009041237A1 (ja) | 2009-04-02 |
CN101809763A (zh) | 2010-08-18 |
EP2200100A1 (en) | 2010-06-23 |
US20100288998A1 (en) | 2010-11-18 |
US8389975B2 (en) | 2013-03-05 |
CN101809763B (zh) | 2012-05-23 |
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