JPS553834B2 - - Google Patents

Info

Publication number
JPS553834B2
JPS553834B2 JP2005372A JP2005372A JPS553834B2 JP S553834 B2 JPS553834 B2 JP S553834B2 JP 2005372 A JP2005372 A JP 2005372A JP 2005372 A JP2005372 A JP 2005372A JP S553834 B2 JPS553834 B2 JP S553834B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2005372A
Other versions
JPS4919782A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2005372A priority Critical patent/JPS553834B2/ja
Publication of JPS4919782A publication Critical patent/JPS4919782A/ja
Publication of JPS553834B2 publication Critical patent/JPS553834B2/ja
Expired legal-status Critical Current

Links

JP2005372A 1972-02-26 1972-02-26 Expired JPS553834B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005372A JPS553834B2 (ja) 1972-02-26 1972-02-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005372A JPS553834B2 (ja) 1972-02-26 1972-02-26

Publications (2)

Publication Number Publication Date
JPS4919782A JPS4919782A (ja) 1974-02-21
JPS553834B2 true JPS553834B2 (ja) 1980-01-26

Family

ID=12016313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005372A Expired JPS553834B2 (ja) 1972-02-26 1972-02-26

Country Status (1)

Country Link
JP (1) JPS553834B2 (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19523158A1 (de) * 1993-12-27 1997-01-09 Toyoda Gosei Kk Verfahren zur Herstellung von saphirlosen Halbleitern aus einer Nitridverbindung der Gruppe III und durch dieses Verfahren hergestellte Halbleiter
US5886367A (en) * 1996-08-07 1999-03-23 Showa Denko K.K. Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer
WO2007111255A1 (ja) 2006-03-24 2007-10-04 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子、ｉｉｉ族窒化物半導体発光素子の製造方法及びランプ
DE112006002403T5 (de) 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
WO2009041237A1 (ja) 2007-09-27 2009-04-02 Showa Denko K.K. Ⅲ族窒化物半導体発光素子
WO2009050955A1 (ja) 2007-10-19 2009-04-23 Showa Denko K.K. Ⅲ族窒化物半導体発行素子
US7573075B2 (en) 2004-03-30 2009-08-11 Showa Denko K.K. Compound semiconductor device, production method of compound semiconductor device and diode
US7646040B2 (en) 2002-11-28 2010-01-12 Showa Denko K.K. Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode
US7732832B2 (en) 2004-04-28 2010-06-08 Showa Denko K.K. Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor
US8084781B2 (en) 2005-09-07 2011-12-27 Showa Denko K.K. Compound semiconductor device
US8299451B2 (en) 2005-11-07 2012-10-30 Showa Denko K.K. Semiconductor light-emitting diode
US9324912B2 (en) 2011-05-19 2016-04-26 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting element and method for producing same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5198134A (ja) * 1975-02-25 1976-08-28
JPH0639792Y2 (ja) * 1988-07-29 1994-10-19 石川島播磨重工業株式会社 篩渣等の定量供給装置
JPH04192586A (ja) * 1990-11-27 1992-07-10 Pioneer Electron Corp 半導体発光素子
US6936863B2 (en) 2002-11-18 2005-08-30 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19523158C2 (de) * 1993-12-27 2001-10-31 Toyoda Gosei Kk Verfahren zur Herstellung von selbsttragenden Halbleiterschichten aus Al¶x¶Ga¶y¶In¶1¶¶-¶¶x¶¶-¶¶y¶N und Verwendung der Halbleiterschichten
DE19523158A1 (de) * 1993-12-27 1997-01-09 Toyoda Gosei Kk Verfahren zur Herstellung von saphirlosen Halbleitern aus einer Nitridverbindung der Gruppe III und durch dieses Verfahren hergestellte Halbleiter
US5886367A (en) * 1996-08-07 1999-03-23 Showa Denko K.K. Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer
DE19734034C2 (de) * 1996-08-07 2000-07-13 Showa Denko Kk Epitaxiewafer für Licht emittierende Vorrichtung, Verfahren zum Bilden des Wafers und den Wafer verwendende, Licht emittierende Vorrichtung
US7646040B2 (en) 2002-11-28 2010-01-12 Showa Denko K.K. Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode
US7573075B2 (en) 2004-03-30 2009-08-11 Showa Denko K.K. Compound semiconductor device, production method of compound semiconductor device and diode
US7732832B2 (en) 2004-04-28 2010-06-08 Showa Denko K.K. Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor
US8084781B2 (en) 2005-09-07 2011-12-27 Showa Denko K.K. Compound semiconductor device
DE112006002403T5 (de) 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
US8299451B2 (en) 2005-11-07 2012-10-30 Showa Denko K.K. Semiconductor light-emitting diode
US8049227B2 (en) 2006-03-24 2011-11-01 Showa Denko K.K. Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof
WO2007111255A1 (ja) 2006-03-24 2007-10-04 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子、ｉｉｉ族窒化物半導体発光素子の製造方法及びランプ
WO2009041237A1 (ja) 2007-09-27 2009-04-02 Showa Denko K.K. Ⅲ族窒化物半導体発光素子
WO2009050955A1 (ja) 2007-10-19 2009-04-23 Showa Denko K.K. Ⅲ族窒化物半導体発行素子
US8227790B2 (en) 2007-10-19 2012-07-24 Showa Denko K.K. Group III nitride semiconductor light-emitting device
US9324912B2 (en) 2011-05-19 2016-04-26 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting element and method for producing same

Also Published As

Publication number Publication date
JPS4919782A (ja) 1974-02-21

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