JP2012505505A - シリコン又はシリコン系材料及びそれらの充電式リチウム電池への使用 - Google Patents
シリコン又はシリコン系材料及びそれらの充電式リチウム電池への使用 Download PDFInfo
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- JP2012505505A JP2012505505A JP2011530547A JP2011530547A JP2012505505A JP 2012505505 A JP2012505505 A JP 2012505505A JP 2011530547 A JP2011530547 A JP 2011530547A JP 2011530547 A JP2011530547 A JP 2011530547A JP 2012505505 A JP2012505505 A JP 2012505505A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 111
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 114
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 title claims description 23
- 229910052744 lithium Inorganic materials 0.000 title claims description 23
- 239000002210 silicon-based material Substances 0.000 title description 5
- 239000010703 silicon Substances 0.000 claims abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 72
- 238000005530 etching Methods 0.000 claims abstract description 44
- -1 hydrogen ions Chemical class 0.000 claims abstract description 30
- 229910001416 lithium ion Inorganic materials 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims abstract description 6
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 5
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 5
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000654 additive Substances 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims description 52
- 229910052709 silver Inorganic materials 0.000 claims description 32
- 239000004332 silver Substances 0.000 claims description 32
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 31
- 239000000835 fiber Substances 0.000 claims description 31
- 210000004027 cell Anatomy 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 17
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011149 active material Substances 0.000 claims description 8
- 210000001787 dendrite Anatomy 0.000 claims description 8
- 239000008187 granular material Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910001963 alkali metal nitrate Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002585 base Substances 0.000 claims description 3
- 235000010344 sodium nitrate Nutrition 0.000 claims description 3
- 239000004317 sodium nitrate Substances 0.000 claims description 3
- DVARTQFDIMZBAA-UHFFFAOYSA-O ammonium nitrate Chemical class [NH4+].[O-][N+]([O-])=O DVARTQFDIMZBAA-UHFFFAOYSA-O 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical group [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910001463 metal phosphate Inorganic materials 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 239000011855 lithium-based material Substances 0.000 claims 1
- 229910052976 metal sulfide Inorganic materials 0.000 claims 1
- 229910002651 NO3 Inorganic materials 0.000 abstract description 12
- 239000010405 anode material Substances 0.000 abstract description 4
- 238000007796 conventional method Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 28
- 239000011856 silicon-based particle Substances 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000010899 nucleation Methods 0.000 description 8
- 230000006911 nucleation Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000011863 silicon-based powder Substances 0.000 description 7
- 101710134784 Agnoprotein Proteins 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 3
- 239000006183 anode active material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 229910001447 ferric ion Inorganic materials 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011244 liquid electrolyte Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910018116 Li 21 Si 5 Inorganic materials 0.000 description 1
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 1
- 229910010710 LiFePO Inorganic materials 0.000 description 1
- 229910015645 LiMn Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000002482 conductive additive Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910001448 ferrous ion Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000002409 silicon-based active material Substances 0.000 description 1
- 239000011866 silicon-based anode active material Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
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- H01M10/052—Li-accumulators
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- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
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- H01M4/131—Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
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Abstract
本方法は商業的スケールで実施することが簡単である。というのは、本方法は、少数の濃度を制御されるべき成分を含むひとつのエッチングバスを使用するものである。従って従来の方法よりも安価であり得る。本発明のエッチング溶液は、
5から10、例えば6から8MのHF、
0.01から0.1MのAg+イオン、
0.02から0.2MのNO3 −イオン、
水、水素イオン及びヒドロキシイオン
及び場合により、
SiF6 2−イオン、
アルカリ金属又はアンモニウムイオン、及び
偶然の添加物及び不純物、を含む。さらにNO3 −イオンを、例えばアルカリ金属又は硝酸アンモニウム塩の形で加えて、硝酸イオンの濃度を前記濃度範囲に維持する。
Description
かかるシリコンピラーを形成するシリコン系材料の選択的エッチングは、US-7033936から知られたものである。これによれば、シリコン基板表面上に半球島状の塩化セシウムを堆積することでマスクを形成させ、かかる島を含む基板表面を膜で覆い、さらに表面から(それを覆う膜を含めて)半球構造を除去して、半球があった領域を露出させてマスクを形成することで製造される。基板はその後、反応性イオンエッチングを用いて露出された領域をエッチングし、レジストを除去(例えば物理的スパッタリングで)してエッチングされていない領域(即ち、半球状の位置の間の領域)にシリコンピラー配列が残される。
シリコンを、
5から10MのHF、例えば6から8MのHF、
0.01から0.1MのAg+イオン、0.02から0.2MのNO3 −イオン、さらに前記範囲に硝酸イオンの濃度を維持するためにNO3 −イオンを例えばアルカリ金属硝酸塩又はアンモニウム硝酸塩の形で加えた溶液で処理し、及び
前記エッチングされたシリコンを前記溶液から分離する、ことを含む。
4Ag+ + 4e− −>4Ag(金属)
核化は一般的に約1分で起こる。
Si + 6F− −> SiF6 2− + 4e− 半反応(1)
半反応(1)で生じた電子は、シリコンを通じて堆積した銀に伝達され、溶液中の銀イオンが元素状銀に還元される対向反応が起こる。
4Ag+ 4e― −>4Ag(金属) 半反応(2)
堆積された元素状銀は、最初に堆積した銀の島から伸張して樹状突起を形成する。この樹状突起は、同じ粒子及び他の粒子の樹状突起とお互いに固定し合ってマットを形成する。樹状突起のお互いの固定化は電気プロセスの速度を増加させる。というのは、還元半反応(2)が起こり得る、より多くのサイトが生じ電荷が非局在化するからである。このプロセスでガスが発生するかもしれないが、これは前記マットを溶液に浮かせる原因となる。
5から10M(例えば6から8M)のHF、
0.01から0.1MのAg+イオン、
0.02から0.2MのNO3 −イオン、
水、水素イオン及びヒドロキシルイオン、及び場合により、
SiF6 2−イオン、
アルカリ金属又はアンモニウムイオン、及び
偶然添加された成分及び不純物を含む。
実施例1 ピラー粒子の取得
反応は、8リットル容積のポリエチレン容器で行った。成分添加用及び攪拌のための孔を設けた蓋を配置した。次の反応材料を用いた。
実施例3 アノードの製造
ピラー粒子又は繊維は、リチウムイオン充電式セルの複合アノードの活物質として使用される。複合アノードの製造のため、ピラー粒子又は繊維はポリビニリデンジフロリドと混合されて、例えばn−メチルピロリジノンのような成形溶媒と共にスラリーにされる。このスラリーを、金属プレート若しくは金属ホイル又は他の導電性基板に、ブレード又は他のいかなる適切な手段を用いて物理的に適用又はコーティングして、要求される厚さのコーティングフィルムを形成する。その後成形溶媒をフィルムから適切な乾燥手段を用いて50℃から140℃の範囲で加熱させて蒸発させ除いて、成形溶媒の含まれない又は実質的に含まれない複合フィルムを得る。得られる複合フィルムは多孔構造を有しシリコン系ピラー化された粒子又は繊維の量は、通常70%から95%の範囲である。複合フィルムは、10から30体積%、好ましくは約20%の孔容積を有する。
Claims (30)
- エッチングされた表面にシリコンピラーを形成するためのシリコンエッチング方法であり:
シリコン、例えば顆粒又はバルク材料を;
5から10MのHF、
0.01から0.1MのAg+イオン及び
0.02から0.2MのNO3 −イオンを含むエッチング溶液で処理し;
さらにNO3 −イオンを、例えばアルカリ金属又は硝酸アンモニウム塩の形で、加えて硝酸イオンの濃度を前記濃度範囲に維持し及び
前記エッチングされたシリコンを前記溶液から分離する、ことを含む方法。 - 前記さらなるNO3 −イオンが、アルカリ金属硝酸塩、例えば硝酸ナトリウム又は硝酸アンモニウムの形で添加される、請求項1に記載の方法。
- 前記溶液が、実質的に鉄イオン(鉄第一イオン又は鉄第二イオン)を含まない、例えば0.05重量%よりも少なく、また5mMよりも少ない例えば2mMよりも少ない、請求項1又は2のいずれかに記載の方法。
- 前記溶液が実質的にアルコールを含まない、例えば0.5体積%よりも少ない、請求項1乃至3のいずれか1項に記載の方法。
- 前記溶液が、
5から10、例えば6から8MのHF、
0.01から0.1MのAg+イオン、
0.02から0.2MのNO3 −イオン、
水、水素イオン及びヒドロキシイオン
及び場合により、
SiF6 2−イオン、
アルカリ金属又はアンモニウムイオン、及び
偶然の添加物及び不純物、を含む、請求項1乃至4のいずれか1項に記載の方法。 - 単一バスで行われる、請求項1乃至5のいずれか1項に記載の方法。
- 前記シリコンが、ドープされていないシリコン、n型若しくはp型ドープシリコン又はそれらの混合物、例えばアルミニウムドープシリコンである、請求項1乃至6のいずれか1項に記載の方法。
- シリコンが、1019から1020キャリア/ccのp型ドープシリコンを含む、請求項7に記載の方法。
- 粒子コアとそこから伸びるシリコンピラーアレイを含むピラー化された粒子を製造するために、前記シリコンが顆粒状であり、前記顆粒が5から500μm、例えば15から500μm、好ましくは25から40μmの範囲の粒子サイズを有する、請求項1乃至83のいずれか1項に記載の方法。
- 温度が0℃から70℃、好ましくは室温で実施される、請求項1乃至9のいずれか1項に記載の方法。
- 前記さらなるNO3 −イオンが、1ステップ又は数ステップで添加され、例えばさらなるNO3 −イオンを、全プロセス時間の約35%から65%経過後に添加される、請求項1乃至10のいずれか1項に記載の方法。
- 少なくとも10分、例えば少なくとも1時間実施される、請求項1乃至11のいずれか1項に記載の方法。
- 前記銀の存在量が、お互いを拘束してマットを形成する銀の樹状突起を成長させるために十分な量である、請求項1乃至12のいずれか1項に記載の方法。
- 最初に使用される前記溶液が、HFの濃度が6.5から9M、例えば6.5から7.5M又は6から8M又は7から9Mであり例えば約7から7.5Mである、請求項1乃至13のいずれか1項に記載の方法。
- 最初に使用される前記Ag+イオンの濃度が、0.02Mから0.06M、例えば約0.03Mである、請求項1乃至15のいずれか1項に記載の方法。
- NO3 −が、0.04から0.08、例えば0.06M存在する、請求項1乃至15のいずれか1項に記載の方法。
- 塩基、好ましくはNaOH又若しくはNH4OH又は硝酸を添加して混合物を調節するステップを含む、請求項1乃至17のいずれか1項に記載の方法。
- 1又はそれ以上のさらなるこすり合わせ、かきまぜ(特に国超音波振動による)又は化学エッチングして、前記得られるエッチングされたシリコンから前記ピラーを引き剥がしてシリコン繊維を形成するステップをさらに含む、請求項1乃至17のいずれか1項に記載の方法。
- 前記繊維の長さが、1μm、例えば50μmより長い、請求項18に記載の方法。
- 請求項1乃至19のいずれか1項に記載の方法で作られたエッチングされた粒子又は繊維をひとつの活物質として含む、電極。
- 銅を集電体として使用する、請求項20に記載の電極。
- 前記電極がアノードである、請求項20又は21のいずれかに記載の電極。
- 請求項20乃至22のいずれか1項に記載の電極を含む、電気化学セル。
- 前記カソードが、リチウムイオンを放出及び吸収可能なリチウム含有化合物を活物質として含有する、請求項23に記載の電気化学セル。
- 前記カソードが、リチウム系金属酸化物、スルフィド又はホスフェートを活物質として含む、請求項24に記載の電気化学セル。
- 請求項1乃至19のいずれか1項に記載の方法で作られた粒子又は繊維を含む、充電式リチウムセルアノード。
- 前記粒子が複合体フィルムの一部である、請求項26に記載のアノード。
- 請求項26又は27のいずれかに記載のアノードと、カソードを含む、セル。
- 前記カソードがリチウム系材料を含む、請求項28に記載のセル。
- 前記カソードがリチウムコバルト二酸化物である、請求項29に記載のセル。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014523066A (ja) * | 2011-06-24 | 2014-09-08 | ネクソン リミテッド | 構造化粒子 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2395059B (en) | 2002-11-05 | 2005-03-16 | Imp College Innovations Ltd | Structured silicon anode |
GB0601318D0 (en) | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | Method of etching a silicon-based material |
GB0601319D0 (en) | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | A method of fabricating pillars composed of silicon-based material |
GB0709165D0 (en) | 2007-05-11 | 2007-06-20 | Nexeon Ltd | A silicon anode for a rechargeable battery |
GB0713898D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries |
GB0713896D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | Method |
GB0713895D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | Production |
GB2464157B (en) | 2008-10-10 | 2010-09-01 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material |
GB2464158B (en) | 2008-10-10 | 2011-04-20 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
GB2470056B (en) | 2009-05-07 | 2013-09-11 | Nexeon Ltd | A method of making silicon anode material for rechargeable cells |
US9853292B2 (en) | 2009-05-11 | 2017-12-26 | Nexeon Limited | Electrode composition for a secondary battery cell |
GB2470190B (en) | 2009-05-11 | 2011-07-13 | Nexeon Ltd | A binder for lithium ion rechargeable battery cells |
GB201005979D0 (en) | 2010-04-09 | 2010-05-26 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
GB201009519D0 (en) | 2010-06-07 | 2010-07-21 | Nexeon Ltd | An additive for lithium ion rechargeable battery cells |
KR20120001589A (ko) | 2010-06-29 | 2012-01-04 | 고려대학교 산학협력단 | 실리콘 태양전지의 전면전극 형성용 유리상 형성제, 이를 포함한 금속 잉크 및 이를 이용한 실리콘 태양전지 |
GB201014706D0 (en) | 2010-09-03 | 2010-10-20 | Nexeon Ltd | Porous electroactive material |
GB201014707D0 (en) | 2010-09-03 | 2010-10-20 | Nexeon Ltd | Electroactive material |
KR101114492B1 (ko) * | 2011-04-15 | 2012-02-24 | 세진이노테크(주) | 리튬 이차전지용 음극 활물질, 이의 제조 방법 및 이를 포함하는 리튬 이차전지 |
KR20140052015A (ko) * | 2011-08-15 | 2014-05-02 | 다우 코닝 코포레이션 | 규소 분말을 포함하는 조성물 및 규소 분말의 결정성의 제어 방법 |
GB2500163B (en) * | 2011-08-18 | 2016-02-24 | Nexeon Ltd | Method |
GB201117279D0 (en) * | 2011-10-06 | 2011-11-16 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
GB201122315D0 (en) * | 2011-12-23 | 2012-02-01 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
JP2015510666A (ja) | 2012-01-30 | 2015-04-09 | ネクソン リミテッドNexeon Limited | Si/C電気活性材料組成物 |
GB2499984B (en) | 2012-02-28 | 2014-08-06 | Nexeon Ltd | Composite particles comprising a removable filler |
GB2502625B (en) | 2012-06-06 | 2015-07-29 | Nexeon Ltd | Method of forming silicon |
GB2507535B (en) | 2012-11-02 | 2015-07-15 | Nexeon Ltd | Multilayer electrode |
CN102969488B (zh) * | 2012-12-05 | 2015-09-23 | 奇瑞汽车股份有限公司 | 一种无定形多孔硅及其制备方法、含该材料的锂离子电池 |
WO2014173788A1 (en) * | 2013-04-25 | 2014-10-30 | Solvay Sa | Reverse osmosis for purifying mixtures of hydrofluoric acid and nitric acid |
US20140346618A1 (en) | 2013-05-23 | 2014-11-27 | Nexeon Limited | Surface treated silicon containing active materials for electrochemical cells |
WO2015055744A1 (en) | 2013-10-15 | 2015-04-23 | Nexeon Limited | Reinforced current collecting substrate assemblies for electrochemical cells |
KR101567203B1 (ko) | 2014-04-09 | 2015-11-09 | (주)오렌지파워 | 이차 전지용 음극 활물질 및 이의 방법 |
KR101604352B1 (ko) | 2014-04-22 | 2016-03-18 | (주)오렌지파워 | 음극 활물질 및 이를 포함하는 리튬 이차 전지 |
CN104009211B (zh) * | 2014-05-13 | 2017-04-12 | 昆明理工大学 | 一种多孔硅纳米纤维/碳复合材料的制备方法 |
KR101550781B1 (ko) | 2014-07-23 | 2015-09-08 | (주)오렌지파워 | 2 차 전지용 실리콘계 활물질 입자의 제조 방법 |
GB2533161C (en) | 2014-12-12 | 2019-07-24 | Nexeon Ltd | Electrodes for metal-ion batteries |
CN107068993B (zh) * | 2017-01-17 | 2019-05-10 | 北京工商大学 | 一种三维复合Co3O4-Si-C负极材料的制备方法 |
CN108459054B (zh) * | 2017-02-20 | 2020-06-19 | 天津大学 | 一种硅纳米线—聚吡咯复合材料的制备方法 |
NO345463B1 (en) * | 2017-04-06 | 2021-02-15 | Elkem Materials | Silicon powder for use in anodes for lithium-ion batteries and method for production of silicon powder |
CN107394176B (zh) * | 2017-07-31 | 2020-07-24 | 中国地质大学(北京) | 硅碳复合材料、制备方法和应用及锂离子电池负极材料 |
US10590562B2 (en) | 2017-12-06 | 2020-03-17 | West Chester University | Regenerative electroless etching |
KR102181378B1 (ko) | 2018-10-11 | 2020-11-20 | 한양대학교 산학협력단 | 다공성 규소-저마늄 전극 소재의 제조방법 및 이를 이용한 이차전지 |
CN109490218A (zh) * | 2018-10-11 | 2019-03-19 | 湖北兴福电子材料有限公司 | 一种金属离子在检测多晶硅蚀刻速率上的应用 |
KR102177630B1 (ko) | 2018-11-02 | 2020-11-11 | 한양대학교 산학협력단 | 규소 기반 다공성 화합물, 이의 제조방법 및 이를 이용한 이차전지 |
CN110143593A (zh) * | 2019-04-29 | 2019-08-20 | 浙江大学 | 多孔硅粉的制备方法、多孔硅粉以及其应用 |
US12106968B2 (en) | 2019-08-01 | 2024-10-01 | Ram Nanotech, Incorporated | Injection metal assisted catalytic etching |
CN110512079A (zh) * | 2019-08-12 | 2019-11-29 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种分离晶硅电池银电极的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52122479A (en) * | 1976-04-08 | 1977-10-14 | Sony Corp | Etching solution of silicon |
JPS63215041A (ja) * | 1987-03-04 | 1988-09-07 | Toshiba Corp | 結晶欠陥評価用エツチング液 |
JP2003109589A (ja) * | 2001-09-28 | 2003-04-11 | Mitsubishi Materials Corp | リチウム電池用負極活物質材料及びその製造方法並びに該材料を用いた負極 |
JP2006278185A (ja) * | 2005-03-30 | 2006-10-12 | Sanyo Electric Co Ltd | リチウム二次電池及びその製造方法 |
WO2007083152A1 (en) * | 2006-01-23 | 2007-07-26 | Nexeon Ltd | Method of etching a silicon-based material |
WO2007083155A1 (en) * | 2006-01-23 | 2007-07-26 | Nexeon Ltd | A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
Family Cites Families (253)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB980513A (en) * | 1961-11-17 | 1965-01-13 | Licentia Gmbh | Improvements relating to the use of silicon in semi-conductor devices |
US3351445A (en) | 1963-08-07 | 1967-11-07 | William S Fielder | Method of making a battery plate |
GB1014706A (en) | 1964-07-30 | 1965-12-31 | Hans Ohl | Improvements in or relating to devices for controlling the dosing of a plurality of different pourable substances for the production of mixtures |
US4002541A (en) | 1972-11-03 | 1977-01-11 | Design Systems, Inc. | Solar energy absorbing article and method of making same |
SU471402A1 (ru) * | 1973-03-02 | 1975-05-25 | Предприятие П/Я Г-4671 | Травильный раствор |
SU544019A1 (ru) * | 1975-07-22 | 1977-01-25 | Одесский Ордена Трудового Красного Знамени Государственный Университет Им.И.И.Мечникова | Травитель дл полупроводниковых материалов |
US4436796A (en) | 1981-07-30 | 1984-03-13 | The United States Of America As Represented By The United States Department Of Energy | All-solid electrodes with mixed conductor matrix |
US4950566A (en) | 1988-10-24 | 1990-08-21 | Huggins Robert A | Metal silicide electrode in lithium cells |
JPH08987B2 (ja) | 1989-02-10 | 1996-01-10 | 日産自動車株式会社 | アルミニウム合金の表面処理方法 |
DE4116910A1 (de) * | 1991-05-21 | 1992-11-26 | Jenoptik Jena Gmbh | Verfahren zur erzeugung oxidkeramischer oberflaechenschichten auf leichtmetall-gusslegierungen |
JP2717890B2 (ja) | 1991-05-27 | 1998-02-25 | 富士写真フイルム株式会社 | リチウム二次電池 |
DE4202454C1 (ja) | 1992-01-29 | 1993-07-29 | Siemens Ag, 8000 Muenchen, De | |
JP3216311B2 (ja) | 1993-03-26 | 2001-10-09 | 松下電器産業株式会社 | リチウム電池 |
US5660948A (en) | 1995-09-26 | 1997-08-26 | Valence Technology, Inc. | Lithium ion electrochemical cell |
US5907899A (en) | 1996-06-11 | 1999-06-01 | Dow Corning Corporation | Method of forming electrodes for lithium ion batteries using polycarbosilanes |
JP3713900B2 (ja) | 1996-07-19 | 2005-11-09 | ソニー株式会社 | 負極材料及びこれを用いた非水電解液二次電池 |
JPH1046366A (ja) | 1996-08-02 | 1998-02-17 | Toyota Motor Corp | アルミニウム合金用エッチング液およびエッチング方法 |
US6022640A (en) | 1996-09-13 | 2000-02-08 | Matsushita Electric Industrial Co., Ltd. | Solid state rechargeable lithium battery, stacking battery, and charging method of the same |
JP3296543B2 (ja) | 1996-10-30 | 2002-07-02 | スズキ株式会社 | めっき被覆アルミニウム合金、及びそのシリンダーブロック、めっき処理ライン、めっき方法 |
JP3620559B2 (ja) | 1997-01-17 | 2005-02-16 | 株式会社ユアサコーポレーション | 非水電解質電池 |
US6337156B1 (en) | 1997-12-23 | 2002-01-08 | Sri International | Ion battery using high aspect ratio electrodes |
JP4399881B2 (ja) | 1998-12-02 | 2010-01-20 | パナソニック株式会社 | 非水電解質二次電池 |
JP3624088B2 (ja) | 1998-01-30 | 2005-02-23 | キヤノン株式会社 | 粉末材料、電極構造体、それらの製造方法、及びリチウム二次電池 |
JPH11283603A (ja) | 1998-03-30 | 1999-10-15 | Noritake Co Ltd | 電池用セパレーター及びその製造方法 |
US6235427B1 (en) | 1998-05-13 | 2001-05-22 | Fuji Photo Film Co., Ltd. | Nonaqueous secondary battery containing silicic material |
JP4728458B2 (ja) | 1998-06-12 | 2011-07-20 | 宇部興産株式会社 | 非水二次電池 |
JP2948205B1 (ja) | 1998-05-25 | 1999-09-13 | 花王株式会社 | 二次電池用負極の製造方法 |
JP2000022162A (ja) * | 1998-07-06 | 2000-01-21 | Advanced Display Inc | 液晶表示装置の製法 |
US6063995A (en) | 1998-07-16 | 2000-05-16 | First Solar, Llc | Recycling silicon photovoltaic modules |
KR100276656B1 (ko) | 1998-09-16 | 2001-04-02 | 박찬구 | 박막형 복합 재료 양극으로 구성된 고체형 이차 전지 |
EP1052712B1 (en) | 1998-12-02 | 2010-02-24 | Panasonic Corporation | Non-aqueous electrolyte secondary cell |
DE19922257A1 (de) | 1999-05-14 | 2000-11-16 | Siemens Ag | Verfahren zum Einbringen von Schlitzen in Siliziumscheiben |
CA2375138A1 (en) | 1999-06-03 | 2000-12-14 | The Penn State Research Foundation | Deposited thin film void-column network materials |
GB9919479D0 (en) | 1999-08-17 | 1999-10-20 | Imperial College | Island arrays |
WO2001031723A1 (fr) | 1999-10-22 | 2001-05-03 | Sanyo Electric Co., Ltd. | Electrode pour accumulateur au lithium et accumulateur au lithium |
AU7951300A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Method for producing material for electrode for lithium cell |
CN1260841C (zh) | 1999-10-22 | 2006-06-21 | 三洋电机株式会社 | 锂电池和可再充电锂电池中用的电极 |
JP3733071B2 (ja) | 1999-10-22 | 2006-01-11 | 三洋電機株式会社 | リチウム電池用電極及びリチウム二次電池 |
KR20050111650A (ko) | 1999-11-08 | 2005-11-25 | 나노그램 코포레이션 | 특정 크기의 입자를 갖는 전극 |
JP2000348730A (ja) | 2000-01-01 | 2000-12-15 | Seiko Instruments Inc | 非水電解質二次電池 |
US6353317B1 (en) | 2000-01-19 | 2002-03-05 | Imperial College Of Science, Technology And Medicine | Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography |
US7335603B2 (en) | 2000-02-07 | 2008-02-26 | Vladimir Mancevski | System and method for fabricating logic devices comprising carbon nanotube transistors |
US6835332B2 (en) | 2000-03-13 | 2004-12-28 | Canon Kabushiki Kaisha | Process for producing an electrode material for a rechargeable lithium battery, an electrode structural body for a rechargeable lithium battery, process for producing said electrode structural body, a rechargeable lithium battery in which said electrode structural body is used, and a process for producing said rechargeable lithium battery |
JP2001291514A (ja) | 2000-04-06 | 2001-10-19 | Sumitomo Metal Ind Ltd | 非水電解質二次電池用負極材料とその製造方法 |
US6399246B1 (en) | 2000-05-05 | 2002-06-04 | Eveready Battery Company, Inc. | Latex binder for non-aqueous battery electrodes |
US6334939B1 (en) | 2000-06-15 | 2002-01-01 | The University Of North Carolina At Chapel Hill | Nanostructure-based high energy capacity material |
JP4137350B2 (ja) | 2000-06-16 | 2008-08-20 | 三星エスディアイ株式会社 | リチウム二次電池用の負極材料及びリチウム二次電池用の電極及びリチウム二次電池並びにリチウム二次電池用の負極材料の製造方法 |
NL1015956C2 (nl) | 2000-08-18 | 2002-02-19 | Univ Delft Tech | Batterij en werkwijze voor het vervaardigen van een dergelijke batterij. |
JP4212263B2 (ja) | 2000-09-01 | 2009-01-21 | 三洋電機株式会社 | リチウム二次電池用負極及びその製造方法 |
CA2420104C (en) | 2000-09-01 | 2012-10-30 | Sanyo Electric Co., Ltd. | Negative electrode for lithium secondary cell and method for producing the same |
CA2423736A1 (en) | 2000-09-25 | 2002-03-28 | Marconi Optical Components Limited | Mechanical deformation based on optical illumination |
US20020102462A1 (en) | 2000-12-06 | 2002-08-01 | Huggins Robert A. | Electrodes for lithium batteries |
JP4248240B2 (ja) | 2001-01-18 | 2009-04-02 | 三洋電機株式会社 | リチウム二次電池 |
JP2002279974A (ja) | 2001-03-19 | 2002-09-27 | Sanyo Electric Co Ltd | 二次電池用電極の製造方法 |
US7141859B2 (en) * | 2001-03-29 | 2006-11-28 | Georgia Tech Research Corporation | Porous gas sensors and method of preparation thereof |
US6887623B2 (en) | 2001-04-09 | 2005-05-03 | Sanyo Electric Co., Ltd. | Electrode for rechargeable lithium battery and rechargeable lithium battery |
JP2002313319A (ja) | 2001-04-09 | 2002-10-25 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びリチウム二次電池 |
JP2002313345A (ja) | 2001-04-13 | 2002-10-25 | Japan Storage Battery Co Ltd | 非水電解質二次電池 |
EP1258937A1 (en) | 2001-05-17 | 2002-11-20 | STMicroelectronics S.r.l. | Micro silicon fuel cell, method of fabrication and self-powered semiconductor device integrating a micro fuel cell |
JP4183401B2 (ja) | 2001-06-28 | 2008-11-19 | 三洋電機株式会社 | リチウム二次電池用電極の製造方法及びリチウム二次電池 |
US7070632B1 (en) | 2001-07-25 | 2006-07-04 | Polyplus Battery Company | Electrochemical device separator structures with barrier layer on non-swelling membrane |
KR100382767B1 (ko) | 2001-08-25 | 2003-05-09 | 삼성에스디아이 주식회사 | 리튬 2차 전지용 음극 박막 및 그의 제조방법 |
EP1313158A3 (en) | 2001-11-20 | 2004-09-08 | Canon Kabushiki Kaisha | Electrode material for rechargeable lithium battery, electrode comprising said electrode material, rechargeable lithium battery having said electrode , and process for the production thereof |
US7252749B2 (en) | 2001-11-30 | 2007-08-07 | The University Of North Carolina At Chapel Hill | Deposition method for nanostructure materials |
JP4035760B2 (ja) | 2001-12-03 | 2008-01-23 | 株式会社ジーエス・ユアサコーポレーション | 非水電解質二次電池 |
US20030135989A1 (en) | 2002-01-19 | 2003-07-24 | Huggins Robert A. | Electrodes for alkali metal batteries |
WO2003063271A1 (en) | 2002-01-19 | 2003-07-31 | Huggins Robert A | Improved electrodes for alkali metal batteries |
JP4199460B2 (ja) | 2002-01-23 | 2008-12-17 | パナソニック株式会社 | 角形密閉式電池 |
WO2003078688A1 (en) * | 2002-03-15 | 2003-09-25 | Canon Kabushiki Kaisha | Porous material and process for producing the same |
US7147894B2 (en) | 2002-03-25 | 2006-12-12 | The University Of North Carolina At Chapel Hill | Method for assembling nano objects |
JP2004071305A (ja) | 2002-08-05 | 2004-03-04 | Hitachi Maxell Ltd | 非水電解質二次電池 |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US6916679B2 (en) | 2002-08-09 | 2005-07-12 | Infinite Power Solutions, Inc. | Methods of and device for encapsulation and termination of electronic devices |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US20080003496A1 (en) | 2002-08-09 | 2008-01-03 | Neudecker Bernd J | Electrochemical apparatus with barrier layer protected substrate |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
JP2004095264A (ja) | 2002-08-30 | 2004-03-25 | Mitsubishi Materials Corp | リチウムイオン二次電池用負極及び該負極を用いて作製したリチウムイオン二次電池 |
KR20050057237A (ko) | 2002-09-05 | 2005-06-16 | 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 | 금속 산화물, 금속 질화물 또는 금속 탄화물 코트 탄소 미분말, 그 제조 방법, 당해 탄소 미분말을 사용한 슈퍼 커패시터 및 2차 전지 |
EP1576678A2 (en) | 2002-09-10 | 2005-09-21 | California Institute Of Technology | High-capacity nanostructured silicon and lithium alloys thereof |
US7051945B2 (en) | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
JP4614625B2 (ja) | 2002-09-30 | 2011-01-19 | 三洋電機株式会社 | リチウム二次電池の製造方法 |
GB2395059B (en) | 2002-11-05 | 2005-03-16 | Imp College Innovations Ltd | Structured silicon anode |
CA2411695A1 (fr) | 2002-11-13 | 2004-05-13 | Hydro-Quebec | Electrode recouverte d'un film obtenu a partir d'une solution aqueuse comportant un liant soluble dans l'eau, son procede de fabrication et ses utilisations |
JP3664252B2 (ja) | 2002-11-19 | 2005-06-22 | ソニー株式会社 | 負極およびそれを用いた電池 |
JP4088957B2 (ja) | 2002-11-19 | 2008-05-21 | ソニー株式会社 | リチウム二次電池 |
JP4025995B2 (ja) | 2002-11-26 | 2007-12-26 | 信越化学工業株式会社 | 非水電解質二次電池負極材及びその製造方法並びにリチウムイオン二次電池 |
WO2004052489A2 (en) | 2002-12-09 | 2004-06-24 | The University Of North Carolina At Chapel Hill | Methods for assembly and sorting of nanostructure-containing materials and related articles |
US7491467B2 (en) | 2002-12-17 | 2009-02-17 | Mitsubishi Chemical Corporation | Negative electrode for nonaqueous electrolyte secondary battery and nonaqueous electrolyte secondary battery using the same |
JP3827642B2 (ja) | 2003-01-06 | 2006-09-27 | 三星エスディアイ株式会社 | リチウム二次電池用負極活物質及びその製造方法並びにリチウム二次電池 |
CN100452493C (zh) | 2003-01-06 | 2009-01-14 | 三星Sdi株式会社 | 再充电锂电池用的负极活性材料、其制法和再充电锂电池 |
US8048568B2 (en) | 2003-01-06 | 2011-11-01 | Samsung Sdi Co., Ltd. | Negative active material for rechargeable lithium battery and rechargeable lithium battery |
US7244513B2 (en) * | 2003-02-21 | 2007-07-17 | Nano-Proprietary, Inc. | Stain-etched silicon powder |
JP2004281317A (ja) | 2003-03-18 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
US20040185346A1 (en) | 2003-03-19 | 2004-09-23 | Takeuchi Esther S. | Electrode having metal vanadium oxide nanoparticles for alkali metal-containing electrochemical cells |
US6969690B2 (en) | 2003-03-21 | 2005-11-29 | The University Of North Carolina At Chapel Hill | Methods and apparatus for patterned deposition of nanostructure-containing materials by self-assembly and related articles |
US7378041B2 (en) | 2003-03-26 | 2008-05-27 | Canon Kabushiki Kaisha | Electrode material for lithium secondary battery, electrode structure comprising the electrode material and secondary battery comprising the electrode structure |
JP4027255B2 (ja) | 2003-03-28 | 2007-12-26 | 三洋電機株式会社 | リチウム二次電池用負極及びその製造方法 |
US20040241548A1 (en) | 2003-04-02 | 2004-12-02 | Takayuki Nakamoto | Negative electrode active material and non-aqueous electrolyte rechargeable battery using the same |
EP1638158A4 (en) | 2003-05-22 | 2010-08-25 | Panasonic Corp | SECONDARY BATTERY WITH A WATER-FREE ELECTROLYTE AND METHOD FOR THE PRODUCTION THEREOF |
JP4416734B2 (ja) | 2003-06-09 | 2010-02-17 | 三洋電機株式会社 | リチウム二次電池及びその製造方法 |
US7094499B1 (en) | 2003-06-10 | 2006-08-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Carbon materials metal/metal oxide nanoparticle composite and battery anode composed of the same |
JP4610213B2 (ja) | 2003-06-19 | 2011-01-12 | 三洋電機株式会社 | リチウム二次電池及びその製造方法 |
US7318982B2 (en) | 2003-06-23 | 2008-01-15 | A123 Systems, Inc. | Polymer composition for encapsulation of electrode particles |
JP4095499B2 (ja) | 2003-06-24 | 2008-06-04 | キヤノン株式会社 | リチウム二次電池用の電極材料、電極構造体及びリチウム二次電池 |
WO2005006469A1 (ja) | 2003-07-15 | 2005-01-20 | Itochu Corporation | 集電構造体及び電極構造体 |
KR100595896B1 (ko) | 2003-07-29 | 2006-07-03 | 주식회사 엘지화학 | 리튬 이차 전지용 음극 활물질 및 그의 제조 방법 |
KR100496306B1 (ko) | 2003-08-19 | 2005-06-17 | 삼성에스디아이 주식회사 | 리튬 금속 애노드의 제조방법 |
KR100497251B1 (ko) | 2003-08-20 | 2005-06-23 | 삼성에스디아이 주식회사 | 리튬 설퍼 전지용 음극 보호막 조성물 및 이를 사용하여제조된 리튬 설퍼 전지 |
US7479351B2 (en) | 2003-10-09 | 2009-01-20 | Samsung Sdi Co., Ltd. | Electrode material for a lithium secondary battery, lithium secondary battery, and preparation method for the electrode material for a lithium secondary battery |
DE10347570B4 (de) | 2003-10-14 | 2015-07-23 | Evonik Degussa Gmbh | Anorganische Separator-Elektroden-Einheit für Lithium-Ionen-Batterien, Verfahren zu deren Herstellung, Verwendung in Lithium-Batterien und Lithium-Batterien mit der anorganischen Separator-Elektroden-Einheit |
JP4497899B2 (ja) | 2003-11-19 | 2010-07-07 | 三洋電機株式会社 | リチウム二次電池 |
US7816032B2 (en) | 2003-11-28 | 2010-10-19 | Panasonic Corporation | Energy device and method for producing the same |
KR100578870B1 (ko) | 2004-03-08 | 2006-05-11 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질, 그의 제조 방법 및 그를포함하는 리튬 이차 전지 |
US7348102B2 (en) | 2004-03-16 | 2008-03-25 | Toyota Motor Corporation | Corrosion protection using carbon coated electron collector for lithium-ion battery with molten salt electrolyte |
US7468224B2 (en) | 2004-03-16 | 2008-12-23 | Toyota Motor Engineering & Manufacturing North America, Inc. | Battery having improved positive electrode and method of manufacturing the same |
US7521153B2 (en) | 2004-03-16 | 2009-04-21 | Toyota Motor Engineering & Manufacturing North America, Inc. | Corrosion protection using protected electron collector |
US7790316B2 (en) | 2004-03-26 | 2010-09-07 | Shin-Etsu Chemical Co., Ltd. | Silicon composite particles, preparation thereof, and negative electrode material for non-aqueous electrolyte secondary cell |
JP4623283B2 (ja) | 2004-03-26 | 2011-02-02 | 信越化学工業株式会社 | 珪素複合体粒子及びその製造方法並びに非水電解質二次電池用負極材 |
US8231810B2 (en) | 2004-04-15 | 2012-07-31 | Fmc Corporation | Composite materials of nano-dispersed silicon and tin and methods of making the same |
US7781102B2 (en) | 2004-04-22 | 2010-08-24 | California Institute Of Technology | High-capacity nanostructured germanium-containing materials and lithium alloys thereof |
CN101010780B (zh) | 2004-04-30 | 2012-07-25 | 纳米系统公司 | 纳米线生长和获取的体系和方法 |
KR100821630B1 (ko) | 2004-05-17 | 2008-04-16 | 주식회사 엘지화학 | 전극 및 이의 제조방법 |
US20060019115A1 (en) | 2004-05-20 | 2006-01-26 | Liya Wang | Composite material having improved microstructure and method for its fabrication |
GB2414231A (en) | 2004-05-21 | 2005-11-23 | Psimedica Ltd | Porous silicon |
WO2006002713A1 (de) | 2004-07-01 | 2006-01-12 | Basf Aktiengesellschaft | Verfahren zur herstellung von acrolein, oder acrylsäure oder deren gemisch aus propan |
FR2873854A1 (fr) | 2004-07-30 | 2006-02-03 | Commissariat Energie Atomique | Procede de fabrication d'une electrode lithiee, electrode lithiee susceptible d'etre obtenue par ce procede et ses utilisations |
US20060088767A1 (en) | 2004-09-01 | 2006-04-27 | Wen Li | Battery with molten salt electrolyte and high voltage positive active material |
US20060051670A1 (en) | 2004-09-03 | 2006-03-09 | Shin-Etsu Chemical Co., Ltd. | Non-aqueous electrolyte secondary cell negative electrode material and metallic silicon power therefor |
US7635540B2 (en) | 2004-11-15 | 2009-12-22 | Panasonic Corporation | Negative electrode for non-aqueous electrolyte secondary battery and non-aqueous electrolyte secondary battery comprising the same |
US7955735B2 (en) | 2004-11-15 | 2011-06-07 | Panasonic Corporation | Non-aqueous electrolyte secondary battery |
US7939218B2 (en) | 2004-12-09 | 2011-05-10 | Nanosys, Inc. | Nanowire structures comprising carbon |
JP4824394B2 (ja) | 2004-12-16 | 2011-11-30 | パナソニック株式会社 | リチウムイオン二次電池用負極、その製造方法、およびそれを用いたリチウムイオン二次電池 |
KR100738054B1 (ko) | 2004-12-18 | 2007-07-12 | 삼성에스디아이 주식회사 | 음극 활물질, 그 제조 방법 및 이를 채용한 음극과 리튬전지 |
JP4229062B2 (ja) | 2004-12-22 | 2009-02-25 | ソニー株式会社 | リチウムイオン二次電池 |
WO2006067891A1 (ja) | 2004-12-22 | 2006-06-29 | Matsushita Electric Industrial Co., Ltd. | 複合負極活物質およびその製造法ならびに非水電解質二次電池 |
JP4095621B2 (ja) | 2005-03-28 | 2008-06-04 | アドバンスド・マスク・インスペクション・テクノロジー株式会社 | 光学画像取得装置、光学画像取得方法、及びマスク検査装置 |
JP2006290938A (ja) | 2005-04-06 | 2006-10-26 | Nippon Brake Kogyo Kk | 摩擦材 |
CA2506104A1 (en) | 2005-05-06 | 2006-11-06 | Michel Gauthier | Surface modified redox compounds and composite electrode obtain from them |
WO2006121870A2 (en) | 2005-05-09 | 2006-11-16 | Vesta Research, Ltd. | Silicon nanosponge particles |
US7700236B2 (en) | 2005-09-09 | 2010-04-20 | Aquire Energy Co., Ltd. | Cathode material for manufacturing a rechargeable battery |
US7781100B2 (en) | 2005-05-10 | 2010-08-24 | Advanced Lithium Electrochemistry Co., Ltd | Cathode material for manufacturing rechargeable battery |
US7887954B2 (en) | 2005-05-10 | 2011-02-15 | Advanced Lithium Electrochemistry Co., Ltd. | Electrochemical composition and associated technology |
US7799457B2 (en) | 2005-05-10 | 2010-09-21 | Advanced Lithium Electrochemistry Co., Ltd | Ion storage compound of cathode material and method for preparing the same |
US20080138710A1 (en) | 2005-05-10 | 2008-06-12 | Ben-Jie Liaw | Electrochemical Composition and Associated Technology |
TWI254031B (en) | 2005-05-10 | 2006-05-01 | Aquire Energy Co Ltd | Manufacturing method of LixMyPO4 compound with olivine structure |
FR2885734B1 (fr) | 2005-05-13 | 2013-07-05 | Accumulateurs Fixes | Materiau nanocomposite pour anode d'accumulateur au lithium |
JP2006351516A (ja) | 2005-05-16 | 2006-12-28 | Toshiba Corp | 負極活物質及び非水電解質二次電池 |
FR2885913B1 (fr) | 2005-05-18 | 2007-08-10 | Centre Nat Rech Scient | Element composite comprenant un substrat conducteur et un revetement metallique nanostructure. |
JP4603422B2 (ja) | 2005-06-01 | 2010-12-22 | 株式会社タカギセイコー | 樹脂製タンクの表面処理方法 |
CN100533821C (zh) | 2005-06-03 | 2009-08-26 | 松下电器产业株式会社 | 非水电解质二次电池及其负极的制备方法 |
US7682741B2 (en) | 2005-06-29 | 2010-03-23 | Panasonic Corporation | Composite particle for lithium rechargeable battery, manufacturing method of the same, and lithium rechargeable battery using the same |
KR100684733B1 (ko) | 2005-07-07 | 2007-02-20 | 삼성에스디아이 주식회사 | 리튬 이차 전지 |
JP4876468B2 (ja) | 2005-07-27 | 2012-02-15 | パナソニック株式会社 | 非水電解質二次電池 |
US8080334B2 (en) | 2005-08-02 | 2011-12-20 | Panasonic Corporation | Lithium secondary battery |
CN100438157C (zh) | 2005-08-29 | 2008-11-26 | 松下电器产业株式会社 | 用于非水电解质二次电池的负极、其制造方法以及非水电解质二次电池 |
US7524529B2 (en) | 2005-09-09 | 2009-04-28 | Aquire Energy Co., Ltd. | Method for making a lithium mixed metal compound having an olivine structure |
KR100738057B1 (ko) | 2005-09-13 | 2007-07-10 | 삼성에스디아이 주식회사 | 음극 전극 및 이를 채용한 리튬 전지 |
US20070065720A1 (en) | 2005-09-22 | 2007-03-22 | Masaki Hasegawa | Negative electrode for lithium ion secondary battery and lithium ion secondary battery prepared by using the same |
JP2007123242A (ja) | 2005-09-28 | 2007-05-17 | Sanyo Electric Co Ltd | 非水電解質二次電池 |
US7771861B2 (en) | 2005-10-13 | 2010-08-10 | 3M Innovative Properties Company | Method of using an electrochemical cell |
KR100759556B1 (ko) | 2005-10-17 | 2007-09-18 | 삼성에스디아이 주식회사 | 음극 활물질, 그 제조 방법 및 이를 채용한 음극과 리튬전지 |
KR100749486B1 (ko) | 2005-10-31 | 2007-08-14 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질, 그의 제조 방법 및 그를포함하는 리튬 이차 전지 |
US20070099084A1 (en) | 2005-10-31 | 2007-05-03 | T/J Technologies, Inc. | High capacity electrode and methods for its fabrication and use |
JP2007128766A (ja) | 2005-11-04 | 2007-05-24 | Sony Corp | 負極活物質および電池 |
US20070117018A1 (en) | 2005-11-22 | 2007-05-24 | Huggins Robert A | Silicon and/or boron-based positive electrode |
KR100949330B1 (ko) | 2005-11-29 | 2010-03-26 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질 및 그를 포함하는 리튬 이차전지 |
JP2007165079A (ja) | 2005-12-13 | 2007-06-28 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用負極とそれを用いた非水電解質二次電池 |
US7906238B2 (en) | 2005-12-23 | 2011-03-15 | 3M Innovative Properties Company | Silicon-containing alloys useful as electrodes for lithium-ion batteries |
JP4692290B2 (ja) * | 2006-01-11 | 2011-06-01 | セイコーエプソン株式会社 | マスクおよび成膜方法 |
KR100763892B1 (ko) | 2006-01-20 | 2007-10-05 | 삼성에스디아이 주식회사 | 음극 활물질, 그 제조 방법, 및 이를 채용한 음극과 리튬전지 |
US7972731B2 (en) | 2006-03-08 | 2011-07-05 | Enerl, Inc. | Electrode for cell of energy storage device and method of forming the same |
US7951242B2 (en) | 2006-03-08 | 2011-05-31 | Nanoener Technologies, Inc. | Apparatus for forming structured material for energy storage device and method |
CN100467670C (zh) * | 2006-03-21 | 2009-03-11 | 无锡尚德太阳能电力有限公司 | 一种用于制备多晶硅绒面的酸腐蚀溶液及其使用方法 |
US7776473B2 (en) | 2006-03-27 | 2010-08-17 | Shin-Etsu Chemical Co., Ltd. | Silicon-silicon oxide-lithium composite, making method, and non-aqueous electrolyte secondary cell negative electrode material |
US9263771B2 (en) | 2006-03-30 | 2016-02-16 | Sanyo Electric Co., Ltd. | Lithium secondary battery and method of manufacturing the same |
KR101328982B1 (ko) | 2006-04-17 | 2013-11-13 | 삼성에스디아이 주식회사 | 음극 활물질 및 그 제조 방법 |
CN100563047C (zh) | 2006-04-25 | 2009-11-25 | 立凯电能科技股份有限公司 | 适用于制作二次电池的正极的复合材料及其所制得的电池 |
JP5003047B2 (ja) * | 2006-04-28 | 2012-08-15 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
KR101483123B1 (ko) | 2006-05-09 | 2015-01-16 | 삼성에스디아이 주식회사 | 금속 나노결정 복합체를 포함하는 음극 활물질, 그 제조방법 및 이를 채용한 음극과 리튬 전지 |
KR100863733B1 (ko) | 2006-05-15 | 2008-10-16 | 주식회사 엘지화학 | 바인더로서 폴리우레탄을 물리적으로 혼합한폴리아크릴산이 포함되어 있는 전극 합제 및 이를 기반으로하는 리튬 이차전지 |
JP2007305546A (ja) | 2006-05-15 | 2007-11-22 | Sony Corp | リチウムイオン電池 |
US20070269718A1 (en) | 2006-05-22 | 2007-11-22 | 3M Innovative Properties Company | Electrode composition, method of making the same, and lithium ion battery including the same |
KR100830612B1 (ko) | 2006-05-23 | 2008-05-21 | 강원대학교산학협력단 | 리튬 이차 전지용 음극 활물질, 그의 제조 방법 및 그를포함하는 리튬 이차 전지 |
US8080335B2 (en) | 2006-06-09 | 2011-12-20 | Canon Kabushiki Kaisha | Powder material, electrode structure using the powder material, and energy storage device having the electrode structure |
JP5200339B2 (ja) | 2006-06-16 | 2013-06-05 | パナソニック株式会社 | 非水電解質二次電池 |
JP5398962B2 (ja) | 2006-06-30 | 2014-01-29 | 三洋電機株式会社 | リチウム二次電池及びその製造方法 |
US7964307B2 (en) | 2006-07-24 | 2011-06-21 | Panasonic Corporation | Negative electrode for lithium ion secondary battery, method for producing the same, and lithium ion secondary battery |
JP2008034266A (ja) | 2006-07-28 | 2008-02-14 | Canon Inc | リチウム二次電池用負極材料の製造方法 |
US7722991B2 (en) | 2006-08-09 | 2010-05-25 | Toyota Motor Corporation | High performance anode material for lithium-ion battery |
US8124277B2 (en) | 2006-08-29 | 2012-02-28 | Unitika Ltd. | Binder for electrode formation, slurry for electrode formation using the binder, electrode using the slurry, rechargeable battery using the electrode, and capacitor using the electrode |
JP5039956B2 (ja) | 2006-09-07 | 2012-10-03 | トヨタ自動車株式会社 | 負極活物質、負極およびリチウム二次電池 |
CN101496199B (zh) | 2006-10-10 | 2010-12-22 | 松下电器产业株式会社 | 非水电解质二次电池用负极 |
US8187754B2 (en) | 2006-10-11 | 2012-05-29 | Panasonic Corporation | Coin-type non-aqueous electrolyte battery |
KR100778450B1 (ko) | 2006-11-22 | 2007-11-28 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질, 이의 제조 방법 및 이를포함하는 리튬 이차 전지 |
KR100814816B1 (ko) | 2006-11-27 | 2008-03-20 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질 및 그를 포함하는 리튬 이차전지 |
JP4501081B2 (ja) | 2006-12-06 | 2010-07-14 | ソニー株式会社 | 電極の形成方法および電池の製造方法 |
JP2008171802A (ja) | 2006-12-13 | 2008-07-24 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用負極とその製造方法およびそれを用いた非水電解質二次電池 |
JP4321584B2 (ja) | 2006-12-18 | 2009-08-26 | ソニー株式会社 | 二次電池用負極および二次電池 |
US7709139B2 (en) | 2007-01-22 | 2010-05-04 | Physical Sciences, Inc. | Three dimensional battery |
JP5143437B2 (ja) | 2007-01-30 | 2013-02-13 | 日本カーボン株式会社 | リチウムイオン二次電池用負極活物質の製造方法、負極活物質及び負極 |
KR20090109570A (ko) | 2007-02-06 | 2009-10-20 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 신규한 결합제를 포함하는 전극과, 그의 제조 방법 및 사용 방법 |
JP5277656B2 (ja) | 2007-02-20 | 2013-08-28 | 日立化成株式会社 | リチウムイオン二次電池用負極材、負極及びリチウムイオン二次電池 |
JP5165258B2 (ja) | 2007-02-26 | 2013-03-21 | 日立マクセルエナジー株式会社 | 非水電解質二次電池 |
US20090053589A1 (en) | 2007-08-22 | 2009-02-26 | 3M Innovative Properties Company | Electrolytes, electrode compositions, and electrochemical cells made therefrom |
US20080206641A1 (en) | 2007-02-27 | 2008-08-28 | 3M Innovative Properties Company | Electrode compositions and electrodes made therefrom |
US20080206631A1 (en) | 2007-02-27 | 2008-08-28 | 3M Innovative Properties Company | Electrolytes, electrode compositions and electrochemical cells made therefrom |
JP2008234988A (ja) | 2007-03-20 | 2008-10-02 | Sony Corp | 負極およびその製造方法、ならびに電池およびその製造方法 |
KR100796664B1 (ko) | 2007-03-21 | 2008-01-22 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질 및 이를 포함하는 리튬 이차전지 |
KR100859687B1 (ko) | 2007-03-21 | 2008-09-23 | 삼성에스디아이 주식회사 | 리튬 이차 전지용 음극 활물질 및 그를 포함하는 리튬 이차전지 |
EP1978587B1 (en) | 2007-03-27 | 2011-06-22 | Hitachi Vehicle Energy, Ltd. | Lithium secondary battery |
US20080241703A1 (en) | 2007-03-28 | 2008-10-02 | Hidekazu Yamamoto | Nonaqueous electrolyte secondary battery |
JP4979432B2 (ja) | 2007-03-28 | 2012-07-18 | 三洋電機株式会社 | 円筒型リチウム二次電池 |
JP2008243717A (ja) | 2007-03-28 | 2008-10-09 | Mitsui Mining & Smelting Co Ltd | 非水電解液二次電池及びその製造方法 |
WO2008119080A1 (en) | 2007-03-28 | 2008-10-02 | Life Bioscience Inc. | Compositions and methods to fabricate a photoactive substrate suitable for shaped glass structures |
JP5628469B2 (ja) | 2007-04-26 | 2014-11-19 | 三菱化学株式会社 | 二次電池用非水系電解液及びそれを用いた非水系電解液二次電池 |
JP2008269827A (ja) | 2007-04-17 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 電気化学素子の電極材料およびその製造方法並びにそれを用いた電極極板および電気化学素子 |
GB0709165D0 (en) | 2007-05-11 | 2007-06-20 | Nexeon Ltd | A silicon anode for a rechargeable battery |
JP5338041B2 (ja) | 2007-06-05 | 2013-11-13 | ソニー株式会社 | 二次電池用負極および二次電池 |
GB0713896D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | Method |
GB0713898D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries |
GB0713895D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | Production |
KR20100056478A (ko) | 2007-08-21 | 2010-05-27 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 고성능 열전 속성을 갖는 나노구조체 |
US20090078982A1 (en) | 2007-09-24 | 2009-03-26 | Willy Rachmady | Alpha hydroxy carboxylic acid etchants for silicon microstructures |
US20090087731A1 (en) | 2007-09-27 | 2009-04-02 | Atsushi Fukui | Lithium secondary battery |
US8119288B2 (en) | 2007-11-05 | 2012-02-21 | Nanotek Instruments, Inc. | Hybrid anode compositions for lithium ion batteries |
CN101442124B (zh) | 2007-11-19 | 2011-09-07 | 比亚迪股份有限公司 | 锂离子电池负极用复合材料的制备方法及负极和电池 |
JP2009176719A (ja) | 2007-12-26 | 2009-08-06 | Sony Corp | 電解液、二次電池およびスルホン化合物 |
US20090186267A1 (en) | 2008-01-23 | 2009-07-23 | Tiegs Terry N | Porous silicon particulates for lithium batteries |
US20110104480A1 (en) * | 2008-02-19 | 2011-05-05 | Steven Malekos | Targets and processes for fabricating same |
KR101406013B1 (ko) | 2008-03-17 | 2014-06-11 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 비수 전해질 2차 전지용 부극재 및 그것의 제조 방법, 및 비수 전해질 2차 전지용 부극 및 비수 전해질 2차 전지 |
US8273591B2 (en) | 2008-03-25 | 2012-09-25 | International Business Machines Corporation | Super lattice/quantum well nanowires |
JP2009252348A (ja) | 2008-04-01 | 2009-10-29 | Panasonic Corp | 非水電解質電池 |
JP4998358B2 (ja) | 2008-04-08 | 2012-08-15 | ソニー株式会社 | リチウムイオン二次電池用負極およびリチウムイオン二次電池 |
WO2009128800A1 (en) * | 2008-04-17 | 2009-10-22 | The Board Of Trustees Of The University Of Illinois | Silicon nanowire and composite formation and highly pure and uniform length silicon nanowires |
JP4844849B2 (ja) | 2008-04-23 | 2011-12-28 | ソニー株式会社 | リチウムイオン二次電池用負極およびリチウムイオン二次電池 |
CN100580876C (zh) | 2008-04-25 | 2010-01-13 | 华东师范大学 | 一种选择性刻蚀硅纳米线的方法 |
US8034485B2 (en) | 2008-05-29 | 2011-10-11 | 3M Innovative Properties Company | Metal oxide negative electrodes for lithium-ion electrochemical cells and batteries |
US20100085685A1 (en) | 2008-10-06 | 2010-04-08 | Avx Corporation | Capacitor Anode Formed From a Powder Containing Coarse Agglomerates and Fine Agglomerates |
GB2464157B (en) * | 2008-10-10 | 2010-09-01 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material |
GB2464158B (en) | 2008-10-10 | 2011-04-20 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
KR101065778B1 (ko) | 2008-10-14 | 2011-09-20 | 한국과학기술연구원 | 탄소나노튜브 피복 실리콘-구리 복합 입자 및 그 제조 방법과, 이를 이용한 이차전지용 음극 및 이차전지 |
JP4952746B2 (ja) | 2008-11-14 | 2012-06-13 | ソニー株式会社 | リチウムイオン二次電池およびリチウムイオン二次電池用負極 |
CN101740747B (zh) | 2008-11-27 | 2012-09-05 | 比亚迪股份有限公司 | 一种硅负极和含有该硅负极的锂离子电池 |
KR101819035B1 (ko) | 2009-02-16 | 2018-01-18 | 삼성전자주식회사 | 14족 금속나노튜브를 포함하는 음극, 이를 채용한 리튬전지 및 이의 제조 방법 |
GB2470056B (en) | 2009-05-07 | 2013-09-11 | Nexeon Ltd | A method of making silicon anode material for rechargeable cells |
US20100285358A1 (en) | 2009-05-07 | 2010-11-11 | Amprius, Inc. | Electrode Including Nanostructures for Rechargeable Cells |
GB0908089D0 (en) | 2009-05-11 | 2009-06-24 | Nexeon Ltd | A binder for lithium ion rechargaable battery cells |
GB2470190B (en) | 2009-05-11 | 2011-07-13 | Nexeon Ltd | A binder for lithium ion rechargeable battery cells |
KR102067922B1 (ko) | 2009-05-19 | 2020-01-17 | 원드 매터리얼 엘엘씨 | 배터리 응용을 위한 나노구조화된 재료 |
US20100330419A1 (en) | 2009-06-02 | 2010-12-30 | Yi Cui | Electrospinning to fabricate battery electrodes |
KR20120128125A (ko) | 2009-11-03 | 2012-11-26 | 엔비아 시스템즈 인코포레이티드 | 리튬 이온 전지용 고용량 아노드 물질 |
GB201005979D0 (en) * | 2010-04-09 | 2010-05-26 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
-
2008
- 2008-10-10 GB GB0818645A patent/GB2464158B/en not_active Expired - Fee Related
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- 2009-09-21 TW TW098131701A patent/TWI460908B/zh not_active IP Right Cessation
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- 2009-10-02 EP EP09736628A patent/EP2335307A1/en not_active Withdrawn
- 2009-10-02 KR KR1020117010622A patent/KR101419280B1/ko active IP Right Grant
- 2009-10-02 JP JP2011530547A patent/JP5535222B2/ja not_active Expired - Fee Related
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- 2009-10-02 WO PCT/GB2009/002348 patent/WO2010040985A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52122479A (en) * | 1976-04-08 | 1977-10-14 | Sony Corp | Etching solution of silicon |
JPS63215041A (ja) * | 1987-03-04 | 1988-09-07 | Toshiba Corp | 結晶欠陥評価用エツチング液 |
JP2003109589A (ja) * | 2001-09-28 | 2003-04-11 | Mitsubishi Materials Corp | リチウム電池用負極活物質材料及びその製造方法並びに該材料を用いた負極 |
JP2006278185A (ja) * | 2005-03-30 | 2006-10-12 | Sanyo Electric Co Ltd | リチウム二次電池及びその製造方法 |
WO2007083152A1 (en) * | 2006-01-23 | 2007-07-26 | Nexeon Ltd | Method of etching a silicon-based material |
WO2007083155A1 (en) * | 2006-01-23 | 2007-07-26 | Nexeon Ltd | A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
JP2009524264A (ja) * | 2006-01-23 | 2009-06-25 | ネクソン・リミテッド | シリコン系材料のエッチング方法 |
JP2009523923A (ja) * | 2006-01-23 | 2009-06-25 | ネクソン・リミテッド | シリコン又はシリコンベースの物質で構成される繊維を製造する方法及びリチウム蓄電池におけるそれらの使用 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014523066A (ja) * | 2011-06-24 | 2014-09-08 | ネクソン リミテッド | 構造化粒子 |
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GB0818645D0 (en) | 2008-11-19 |
GB2464158B (en) | 2011-04-20 |
JP5535222B2 (ja) | 2014-07-02 |
US20110269019A1 (en) | 2011-11-03 |
CN102239583B (zh) | 2016-01-13 |
TWI460908B (zh) | 2014-11-11 |
KR20110082171A (ko) | 2011-07-18 |
WO2010040985A1 (en) | 2010-04-15 |
US9184438B2 (en) | 2015-11-10 |
EP2335307A1 (en) | 2011-06-22 |
GB2464158A (en) | 2010-04-14 |
CN102239583A (zh) | 2011-11-09 |
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KR101419280B1 (ko) | 2014-07-15 |
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