JP2011044697A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2011044697A JP2011044697A JP2010159783A JP2010159783A JP2011044697A JP 2011044697 A JP2011044697 A JP 2011044697A JP 2010159783 A JP2010159783 A JP 2010159783A JP 2010159783 A JP2010159783 A JP 2010159783A JP 2011044697 A JP2011044697 A JP 2011044697A
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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Abstract
【解決手段】同一基板上に駆動回路部と表示部とを有し、当該駆動回路部は、ソース電極及びドレイン電極が金属によって構成され、且つチャネル層が酸化物半導体によって構成された駆動回路用TFTと、金属によって構成された駆動回路用配線とを有すればよい。また、当該表示部はソース電極及びドレイン電極が酸化物導電体によって構成され、且つ半導体層が酸化物半導体によって構成された画素用TFTと、酸化物導電体によって構成された表示部用配線とを有すればよい。
【選択図】図1
Description
本実施の形態は、本発明の一態様である薄膜トランジスタおよびその作製方法について説明する。
本実施の形態は、本発明の一態様であって実施の形態1とは異なる薄膜トランジスタおよびその作製方法について説明する。
本実施の形態では、実施の形態1に示したアクティブマトリクス基板を用いて、アクティブマトリクス型の液晶表示装置を作製する一例を示す。
本実施の形態では、液晶表示パネルのサイズが10インチを超え、60インチ、さらには120インチとする場合には透光性を有する配線の配線抵抗が問題となる恐れがあるため、ゲート配線の一部を金属配線として配線抵抗を低減する例を示す。
本実施の形態では、保持容量の構成について、実施の形態3と異なる例を図11(A)及び図11(B)に示す。図11(A)は、図9(A)と保持容量の構成が異なる点以外は同じであるため、同じ箇所には同じ符号を用い、同じ箇所の詳細な説明は省略する。なお、図11(A)では画素に配置される薄膜トランジスタ220と保持容量の断面構造を示す。
本実施の形態では、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、薄膜トランジスタを用いて駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図22に示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
本実施の形態では、半導体装置の一形態として、実施の形態1乃至5で示す薄膜トランジスタを有する表示装置の例を図26乃至図39を用いて説明する。本実施の形態は、表示素子として液晶素子を用いた液晶表示装置の例を図26乃至図39を用いて説明する。図26乃至図39の液晶表示装置に用いられるTFT628、629は、実施の形態1乃至5で示す薄膜トランジスタを適用することができ、実施の形態1乃至5で示す工程で同様に作製できる電気特性及び信頼性の高い薄膜トランジスタである。TFT628はチャネル保護層608を、TFT629はチャネル保護層611をそれぞれ有し、酸化物半導体層をチャネル形成領域とする逆スタガ薄膜トランジスタである。
本実施の形態では、断面から見て酸化物半導体層を窒化物絶縁膜で囲む例を図40に示す。図40は、酸化物絶縁層416の上面形状及び端部の位置が図1(A)と異なる点、ゲート絶縁層の構成が異なる点以外は同じであるため、同じ箇所の詳細な説明は省略する。
11 配線
12 配線
13 配線
14 配線
15 配線
21 入力端子
22 入力端子
23 入力端子
24 入力端子
25 入力端子
26 出力端子
27 出力端子
31 トランジスタ
32 トランジスタ
33 トランジスタ
34 トランジスタ
35 トランジスタ
36 トランジスタ
37 トランジスタ
38 トランジスタ
39 トランジスタ
40 トランジスタ
41 トランジスタ
42 トランジスタ
43 トランジスタ
51 電源線
52 電源線
53 電源線
61 期間
62 期間
100 基板
102 ゲート絶縁膜
102b ゲート絶縁膜
107 保護絶縁膜
107a 保護絶縁膜
108 保護絶縁膜
111 ボトムゲート電極
113 酸化物半導体層
113a 酸化物半導体層
113b 酸化物半導体層
113c 酸化物半導体層
113d 酸化物半導体領域
114a 導電層
114b 導電層
115a 導電層
115b 導電層
116 チャネル保護層
125 コンタクトホール
128 画素電極
129 バックゲート電極
134 レジストマスク
135 レジストマスク
141 薄膜トランジスタ
142 薄膜トランジスタ
143 薄膜トランジスタ
144 薄膜トランジスタ
145 薄膜トランジスタ
146 薄膜トランジスタ
200 基板
202a ゲート絶縁層
202b ゲート絶縁層
203 保護絶縁層
204 保護絶縁層
210 薄膜トランジスタ
211 ボトムゲート電極
213 酸化物半導体層
213a 酸化物半導体層
213b 酸化物半導体層
213c 酸化物半導体層
213d 酸化物半導体領域
214a ソース電極又はドレイン電極
214b ソース電極又はドレイン電極
215a 導電層
215b 導電層
216 チャネル保護層
217 導電層
220 薄膜トランジスタ
224 コンタクトホール
227 画素電極層
230 容量配線層
231 容量電極
232 ゲート配線層
234 ソース配線
235 端子電極
236 金属配線層
237 金属配線層
238 ゲート配線層
240 薄膜トランジスタ
241 金属配線層
242 金属配線層
250 容量配線層
251 酸化物半導体層
400 基板
402 ゲート絶縁層
403 保護絶縁層
405b ドレイン電極層
410 薄膜トランジスタ
411 ゲート電極層
413 酸化物半導体層
414a 低抵抗N型領域
414b 低抵抗N型領域
415a ソース電極層
415b ドレイン電極層
416 酸化物絶縁層
420 薄膜トランジスタ
421 ゲート電極層
422 酸化物半導体層
425a ソース電極層
425b ドレイン電極層
426 酸化物絶縁層
580 基板
581 薄膜トランジスタ
583 絶縁層
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
596 基板
600 基板
601 対向基板
602 ゲート配線
603 ゲート配線
604 容量配線
605 容量配線
606 ゲート絶縁膜
607 電極層
608 チャネル保護層
609 共通電位線
611 チャネル保護層
615 容量電極
616 配線
617 容量配線
618 配線
619 配線
620 絶縁膜
622 絶縁膜
623 コンタクトホール
624 画素電極層
625 スリット
626 画素電極層
627 コンタクトホール
628 TFT
629 TFT
630 保持容量部
631 保持容量部
632 遮光膜
633 コンタクトホール
636 着色膜
637 平坦化膜
640 対向電極層
641 スリット
644 突起
646 配向膜
648 配向膜
650 液晶層
651 液晶素子
652 液晶素子
690 容量配線
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4035 スペーサ
4040 バックゲート電極
4041 絶縁層
4042 絶縁層
4501 基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4518b FPC
4519 異方性導電膜
4520 隔壁
4540 バックゲート電極
4541 絶縁層
4542 絶縁層
4543 絶縁層
4544 絶縁層
5300 基板
5301 画素部
5302 走査線駆動回路
5303 走査線駆動回路
5304 信号線駆動回路
5305 タイミング制御回路
5601 シフトレジスタ
5602 スイッチング回路
5603 薄膜トランジスタ
5604 配線
5605 配線
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 TFT
7002 発光素子
7003 陰極
7004 発光層
7005 陽極
7008 陰極
7009 隔壁
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 発光層
7015 陽極
7016 遮蔽膜
7017 導電膜
7018 導電膜
7019 隔壁
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 発光層
7025 陽極
7027 導電膜
7028 導電膜
7029 隔壁
9201 表示部
9202 表示ボタン
9203 操作スイッチ
9204 バンド部
9205 調節部
9206 カメラ部
9207 スピーカ
9208 マイク
9301 上部筐体
9302 下部筐体
9303 表示部
9304 キーボード
9305 外部接続ポート
9306 ポインティングデバイス
9307 表示部
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 入力手段(操作キー)
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (7)
- 同一基板上に第1の薄膜トランジスタを有する駆動回路と第2の薄膜トランジスタを有する画素部を有し、
前記第2の薄膜トランジスタは、
前記基板上にボトムゲート電極と、
前記ボトムゲート電極上にゲート絶縁層と、
前記ゲート絶縁層上に酸化物半導体層と、
前記酸化物半導体層の一部と接する第2のチャネル保護層と、
前記第2のチャネル保護層及び前記酸化物半導体層上にソース電極及びドレイン電極と、
前記第2のチャネル保護層上に画素電極層を有し、
前記第2の薄膜トランジスタの前記ボトムゲート電極、前記ゲート絶縁層、前記酸化物半導体層、前記ソース電極、前記ドレイン電極、前記第2のチャネル保護層、及び前記画素電極層は透光性を有し、
前記第1の薄膜トランジスタのソース電極及びドレイン電極は、前記第2の薄膜トランジスタの前記ソース電極及び前記ドレイン電極と材料が異なり、
前記第2の薄膜トランジスタの前記ソース電極及び前記ドレイン電極よりも低抵抗の導電材料であることを特徴とする半導体装置。 - 請求項1において、
前記第1の薄膜トランジスタは、前記第1の薄膜トランジスタの酸化物半導体層の一部と接する第1のチャネル保護層と、
前記第1のチャネル保護層及び前記酸化物半導体層上にソース電極及びドレイン電極を有することを特徴とする半導体装置。 - 請求項1において、
前記第1の薄膜トランジスタは、前記第1の薄膜トランジスタの酸化物半導体層の一部と接する第1のチャネル保護層と、
前記第1のチャネル保護層及び前記酸化物半導体層上にソース電極及びドレイン電極を有し、
チャネル形成領域上に前記第1のチャネル保護層を介してバックゲート電極を有することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一において、
前記第1のチャネル保護層と前記第2のチャネル保護層は、同じ透光性を有する絶縁材料であることを特徴とする半導体装置。 - 請求項1乃至4のいずれか一において、
前記第1の薄膜トランジスタのソース電極及びドレイン電極は、Al、Cr、Cu、Ta、Ti、Mo、Wから選ばれた元素を主成分とする膜、若しくはそれらの合金膜とを組み合わせた積層膜からなることを特徴とする半導体装置。 - 請求項1乃至5のいずれか一において、
前記第2の薄膜トランジスタのソース電極層、ドレイン電極層、及び画素電極層は、酸化インジウム、酸化インジウム酸化スズ合金、酸化インジウム酸化亜鉛合金、または酸化亜鉛であることを特徴とする半導体装置。 - 請求項1乃至6のいずれか一において、
さらに同一基板上に容量部を有し、
前記容量部は、容量配線及び該容量配線と重なる容量電極を有し、
前記容量配線及び前記容量電極は透光性を有する半導体装置。
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Also Published As
Publication number | Publication date |
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US20150155304A1 (en) | 2015-06-04 |
JP2015130511A (ja) | 2015-07-16 |
JP5145381B2 (ja) | 2013-02-13 |
TWI559499B (zh) | 2016-11-21 |
JP5683049B2 (ja) | 2015-03-11 |
US20110012117A1 (en) | 2011-01-20 |
WO2011010544A1 (en) | 2011-01-27 |
JP2022003693A (ja) | 2022-01-11 |
US8987048B2 (en) | 2015-03-24 |
KR20150080028A (ko) | 2015-07-08 |
JP2023153828A (ja) | 2023-10-18 |
CN102473733A (zh) | 2012-05-23 |
JP2020073952A (ja) | 2020-05-14 |
KR101768786B1 (ko) | 2017-08-16 |
JP2013084964A (ja) | 2013-05-09 |
US8729550B2 (en) | 2014-05-20 |
US9184185B2 (en) | 2015-11-10 |
CN105070749B (zh) | 2019-08-09 |
KR20120049886A (ko) | 2012-05-17 |
CN102473733B (zh) | 2015-09-30 |
JP2017028298A (ja) | 2017-02-02 |
KR20180071402A (ko) | 2018-06-27 |
KR101870460B1 (ko) | 2018-06-22 |
CN105070749A (zh) | 2015-11-18 |
TW201133786A (en) | 2011-10-01 |
JP2018163375A (ja) | 2018-10-18 |
US20140209902A1 (en) | 2014-07-31 |
KR101929726B1 (ko) | 2018-12-14 |
JP6585778B2 (ja) | 2019-10-02 |
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