WO2009019920A1 - 回路基板及び表示装置 - Google Patents

回路基板及び表示装置 Download PDF

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Publication number
WO2009019920A1
WO2009019920A1 PCT/JP2008/059125 JP2008059125W WO2009019920A1 WO 2009019920 A1 WO2009019920 A1 WO 2009019920A1 JP 2008059125 W JP2008059125 W JP 2008059125W WO 2009019920 A1 WO2009019920 A1 WO 2009019920A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit board
gate type
thin film
film transistor
type thin
Prior art date
Application number
PCT/JP2008/059125
Other languages
English (en)
French (fr)
Inventor
Hiroyuki Moriwaki
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to US12/673,061 priority Critical patent/US20110266543A1/en
Priority to CN2008800185405A priority patent/CN101681931B/zh
Publication of WO2009019920A1 publication Critical patent/WO2009019920A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates

Abstract

本発明は、トップゲート型ＴＦＴとボトムゲート型ＴＦＴとを同一基板上に形成した回路基板において、ＴＦＴの信頼性の向上を図ることが可能な回路基板を提供する。本発明は、基板上に、ゲート電極、ゲート絶縁膜及び半導体層が基板側から積層されたボトムゲート型薄膜トランジスタと、半導体層、ゲート絶縁膜及びゲート電極が基板側から積層されたトップゲート型薄膜トランジスタとを備える回路基板であって、上記回路基板は、基板とトップゲート型薄膜トランジスタの半導体層との間に、２以上の絶縁膜を有し、上記２以上の絶縁膜は、基板とボトムゲート型薄膜トランジスタのゲート電極との間に配置されたベースコート膜、及び、ボトムゲート型薄膜トランジスタのゲート絶縁膜を含んで構成される回路基板。
PCT/JP2008/059125 2007-08-09 2008-05-19 回路基板及び表示装置 WO2009019920A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/673,061 US20110266543A1 (en) 2007-08-09 2008-05-19 Circuit board and display device
CN2008800185405A CN101681931B (zh) 2007-08-09 2008-05-19 电路基板和显示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007208372 2007-08-09
JP2007-208372 2007-08-09

Publications (1)

Publication Number Publication Date
WO2009019920A1 true WO2009019920A1 (ja) 2009-02-12

Family

ID=40341156

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059125 WO2009019920A1 (ja) 2007-08-09 2008-05-19 回路基板及び表示装置

Country Status (3)

Country Link
US (1) US20110266543A1 (ja)
CN (1) CN101681931B (ja)
WO (1) WO2009019920A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018005236A (ja) * 2016-06-30 2018-01-11 エルジー ディスプレイ カンパニー リミテッド バックプレーン基板とその製造方法、及びそれを適用した有機発光表示装置
JP2018163375A (ja) * 2009-07-18 2018-10-18 株式会社半導体エネルギー研究所 表示装置
CN108806593A (zh) * 2018-05-31 2018-11-13 厦门天马微电子有限公司 一种有机发光显示面板及显示装置

Families Citing this family (13)

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CN102466937B (zh) * 2010-10-29 2014-10-22 北京京东方光电科技有限公司 Tft-lcd、驱动器件及其制造方法
US9965063B2 (en) * 2013-02-20 2018-05-08 Apple Inc. Display circuitry with reduced pixel parasitic capacitor coupling
CN103077957B (zh) 2013-02-22 2015-09-02 深圳市华星光电技术有限公司 主动矩阵式有机发光二极管显示装置及其制作方法
KR102143924B1 (ko) * 2013-07-12 2020-08-13 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102240894B1 (ko) * 2014-02-26 2021-04-16 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
JP6425114B2 (ja) * 2014-07-02 2018-11-21 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 折り畳み式表示装置及び電気機器
KR102375894B1 (ko) * 2015-03-27 2022-03-17 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN106558593B (zh) * 2015-09-18 2019-12-17 鸿富锦精密工业（深圳）有限公司 阵列基板、显示面板、显示装置及阵列基板的制备方法
KR20170040861A (ko) * 2015-10-05 2017-04-14 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이를 구비한 디스플레이 장치, 박막 트랜지스터 기판 제조방법 및 디스플레이 장치 제조방법
KR20170081571A (ko) * 2016-01-04 2017-07-12 주식회사 엘지화학 회로기판의 제조방법
EP3410492A4 (en) 2016-03-31 2019-01-23 Huawei Technologies Co., Ltd. FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
CN112133710A (zh) * 2016-04-08 2020-12-25 群创光电股份有限公司 显示设备
KR20180052166A (ko) * 2016-11-09 2018-05-18 엘지디스플레이 주식회사 포토 센서 및 그를 구비하는 표시장치

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JP2007013013A (ja) * 2005-07-01 2007-01-18 Sharp Corp 半導体装置、半導体装置製造方法、薄膜トランジスタアレイ基板、及び、液晶表示装置

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Publication number Priority date Publication date Assignee Title
JP2018163375A (ja) * 2009-07-18 2018-10-18 株式会社半導体エネルギー研究所 表示装置
JP2018005236A (ja) * 2016-06-30 2018-01-11 エルジー ディスプレイ カンパニー リミテッド バックプレーン基板とその製造方法、及びそれを適用した有機発光表示装置
US10529787B2 (en) 2016-06-30 2020-01-07 Lg Display Co., Ltd. Backplane substrate, manufacturing method for the same, and organic light-emitting display device using the same
CN108806593A (zh) * 2018-05-31 2018-11-13 厦门天马微电子有限公司 一种有机发光显示面板及显示装置

Also Published As

Publication number Publication date
CN101681931A (zh) 2010-03-24
CN101681931B (zh) 2011-09-14
US20110266543A1 (en) 2011-11-03

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