JP2010123998A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2010123998A JP2010123998A JP2010046384A JP2010046384A JP2010123998A JP 2010123998 A JP2010123998 A JP 2010123998A JP 2010046384 A JP2010046384 A JP 2010046384A JP 2010046384 A JP2010046384 A JP 2010046384A JP 2010123998 A JP2010123998 A JP 2010123998A
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- Prior art keywords
- film
- silicon nitride
- insulating film
- nitride film
- wiring
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Images
Classifications
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- B32—LAYERED PRODUCTS
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- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/02—Layered products essentially comprising sheet glass, or glass, slag, or like fibres in the form of fibres or filaments
- B32B17/04—Layered products essentially comprising sheet glass, or glass, slag, or like fibres in the form of fibres or filaments bonded with or embedded in a plastic substance
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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Abstract
【解決手段】結晶性半導体膜と、結晶性半導体膜上のゲート絶縁膜とゲート絶縁膜上のゲート電極と、結晶性半導体膜及びゲート電極上の第1の層間絶縁膜と、第1の層間絶縁膜に設けられた第1のコンタクト部を介して結晶性半導体膜に電気的に接続される第1の配線と、第1の層間絶縁膜及び第1の配線上の、第1の配線の一部を露出させた第2のコンタクト部が設けられた第1の窒化珪素膜及び第1の窒化珪素膜上の第2の層間絶縁膜と、第2のコンタクト部により露出させた第1の配線上に設けられたCuの拡散を防ぐバリア層と、第2のコンタクト部に設けられたバリア層上のCuでなる第2の配線と、第2の配線を被覆して設けられた第2の窒化珪素膜とを有する。
【選択図】図14
Description
例えば、100℃/秒の速度で冷却すると、1100℃から300℃まで8秒で冷却することができる。
高周波電源が供給する電力の周波数は1MHz以上120MHz以下、好ましくは10MHz以上60MHz以下の周波数を適用する。このような周波数の適用範囲は、それが高くなるに従いシース電位が下がり、物理的な膜形成機構によるスパッタリング法にあっても、化学的な反応による膜形成が優位となり緻密な被膜を形成することが期待できる。また、膜形成室106、107は金属のターゲットを備え直流電源117が接続されている。
試料は単結晶珪素基板上に表1に従う条件で形成された窒化珪素膜であり、水素濃度が1×1021/cm3以下であることが判明している。窒化珪素膜における水素結合の有無はフーリエ変換赤外分光分析(FT−IR)によっても調べ、その結果をプラズマCVD法で作製された窒化珪素膜の特性との比較で図5に示す。FT−IRの分析によってもSi−H結合、N−H結合による吸収ピークは観測されていない。
理想的には、窒素ガスのみとすれば良いが、膜形成速度が著しく低下するので、窒素と希ガスとの混合比が最大で1対1となる範囲内で選択することが好ましい。
本実施の形態において適用することのできる基板には、バリウムホウケイ酸ガラス、アルミノホウケイ酸ガラス、アルミノシリケートガラスなどを素材とするガラス基板が適している。代表的には、コーニング社製の1737ガラス基板(歪み点667℃)、旭硝子社製のAN100(歪み点670℃)などが適用可能であるが、勿論他の同様な基板であれば特段の限定はない。いずれにしても、本発明においては歪み点700℃以下のガラス基板が適用可能である。本実施例では、歪み点700℃以下のガラス基板上に高周波マグネトロンスパッタリング法により作製された窒化珪素膜を用いてマイクロプロセッサ(Micro Processor Unit:MPU)を形成する一形態について説明する。
また、この処理により半導体膜の最表面がエッチングされて水素で終端された清浄で不活性な表面が形成されるという特徴もある。
実施の形態1において、図10(B)で示す結晶性珪素膜が得られた後に、図11で示すように、連続発振型の固体レーザーとして、YAGレーザー、YVO4レーザー、YLFレーザーを用いることができる。YAGレーザー、YVO4レーザー、YLFレーザーの第2高調波を照射する。例えば、YVO4レーザーの第2高調波(532nm)を線状に集光して、1〜100cm/secの速度で走査させ結晶性の向上を図る。この工程で連続発振レーザーを用いることで、表面が平滑な結晶性珪素膜を得ることができ、表面の凹凸形状の最大値を10nm以下好ましくは5nm以下にすることができる。
本実施の形態は、ゲート電極の構造が異なり、より微細化に適した半導体装置の構成について図面を参照して説明する。勿論、この半導体装置の各部位においても本発明に係る窒化珪素膜が適用される。
本実施の形態では、ダマシンによりCu配線を形成する一形態について図15を用いて説明する。勿論、この半導体装置の各部位においても本発明に係る窒化珪素膜が適用される。
窒化珪素膜260、窒化珪素膜268、窒化珪素膜274とでCu配線263を挟み込むことによりCuによりTFTが汚染されるのを防ぐことができる。
本実施の形態は、ガラス基板と比較してより平坦性の高い合成石英基板を用いて、より微細化に適した半導体装置の構成について図22と図23を参照して説明する。勿論、この半導体装置の各部位においても本発明に係る窒化珪素膜が適用される。
実施の形態5に、実施の形態4で示す配線形成工程を組み合わせて半導体装置を完成させても良い。即ち、ダマシン技術によりCu配線を形成することができる。この場合においても、本発明に係る窒化珪素膜が適用される。
実施の形態1〜6により作製される代表的な半導体装置としてマイクロコンピュータの一実施形態を図18と図19を用いて説明する。図18に示すように、0.3〜1.1mmの厚さのガラス又は石英などの基板上に各種の機能回路部を集積してマイクロコンピュータを実現することができる。各種の機能回路部は実施の形態1〜6により作製されるTFTや容量部を主体として形成することが可能である。
さらにこれに接してアルミニウムで形成される放熱フィン2204が設けられ、マイクロコンピュータ2100の動作に伴う発熱対策としている。全体は封止樹脂2205で覆われ、外部回路との接続はピン2202により行う。
Claims (4)
- 結晶性半導体膜と、
前記結晶性半導体膜上のゲート絶縁膜と
前記ゲート絶縁膜上のゲート電極と、
前記結晶性半導体膜及び前記ゲート電極上の第1の層間絶縁膜と、
前記第1の層間絶縁膜に設けられた第1のコンタクト部を介して前記結晶性半導体膜に電気的に接続される第1の配線と、
前記第1の層間絶縁膜及び前記第1の配線上の、前記第1の配線の一部を露出させた第2のコンタクト部が設けられた第1の窒化珪素膜及び前記第1の窒化珪素膜上の第2の層間絶縁膜と、
前記第2のコンタクト部により露出させた前記第1の配線上に設けられたCuの拡散を防ぐバリア層と、
前記第2のコンタクト部に設けられた前記バリア層上のCuでなる第2の配線と、
前記第2の配線を被覆して設けられた第2の窒化珪素膜と、を有することを特徴とする半導体装置。 - 結晶性半導体膜と、
前記結晶性半導体膜上のゲート絶縁膜と
前記ゲート絶縁膜上のゲート電極と、
前記結晶性半導体膜及び前記ゲート電極上の第1の窒化珪素膜と、
前記第1の窒化珪素膜上の第1の層間絶縁膜と、
前記第1の層間絶縁膜に設けられた第1のコンタクト部を介して前記結晶性半導体膜に電気的に接続される第1の配線と、
前記第1の層間絶縁膜及び前記第1の配線上の、前記第1の配線の一部を露出させた第2のコンタクト部が設けられた第2の窒化珪素膜、前記第2の窒化珪素膜上の第2の層間絶縁膜、及び前記第2の層間絶縁膜上の第3の窒化珪素膜と、
前記第3の窒化珪素膜上の、前記第2のコンタクト部と重なり、かつ前記第2のコンタクト部よりも広い開口幅の第3のコンタクト部が設けられた第3の層間絶縁膜と、
前記第2のコンタクト部及び前記第3のコンタクト部により露出させた前記第1の配線上に設けられたCuの拡散を防ぐバリア層と、
前記第2のコンタクト部及び前記第3のコンタクト部に設けられた前記バリア層上の表面が平坦化されたCuでなる第2の配線と、
前記第2の配線を被覆して設けられた第4の窒化珪素膜と、を有することを特徴とする半導体装置。 - 請求項1または2において、前記バリア層は、窒化タンタルでなることを特徴とする半導体装置。
- 請求項1乃至3のいずれか一において、前記第1の配線は、Al、Ti、Mo、またはWを用いて形成されることを特徴とする半導体装置。
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KR101028346B1 (ko) | 2011-04-11 |
KR101021053B1 (ko) | 2011-03-15 |
US7893439B2 (en) | 2011-02-22 |
JP5732501B2 (ja) | 2015-06-10 |
KR20100133932A (ko) | 2010-12-22 |
JP2015128174A (ja) | 2015-07-09 |
US20080142887A1 (en) | 2008-06-19 |
JP2015005779A (ja) | 2015-01-08 |
KR20100086968A (ko) | 2010-08-02 |
US20050106898A1 (en) | 2005-05-19 |
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