CN1343376A - 用于生产半导体p,p+ 和n,n+区的掺杂糊剂 - Google Patents
用于生产半导体p,p+ 和n,n+区的掺杂糊剂 Download PDFInfo
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- CN1343376A CN1343376A CN00804875A CN00804875A CN1343376A CN 1343376 A CN1343376 A CN 1343376A CN 00804875 A CN00804875 A CN 00804875A CN 00804875 A CN00804875 A CN 00804875A CN 1343376 A CN1343376 A CN 1343376A
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Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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Abstract
本发明涉及用于生产单晶和多晶Si片的p,p+和n,n+区的新型硼、磷或硼-铝基掺杂糊剂,本发明进一步涉及使用相应的糊剂作为掩模糊剂在半导体的生产、功率电子元件或光电器件方面的应用。
Description
本发明涉及用于生产单晶和多晶Si片的p,p+和n,n+区的新型硼、磷或硼-铝基掺杂糊剂,以及在半导体制造、电子元件或光电器件方面用作掩模糊剂的相应软糊剂。
在光电技术领域和功率半导体(如二极管、硅可控整流器)的情况下,单晶硅片的硼或磷掺杂可经由汽相(如POCl3,膦,BBr3)或利用固体(膜或固体片)或利用液体介质如磷酸,与其它有机B或P体系一同进行。
利用这些技术直接形成图案是不可能的。如果不使用掩蔽非掺杂区的加工技术如光刻蚀法,就不可能对规定区域进行选择性掺杂。
在光电技术中,通过在背面p++掺杂可以获得广泛或局部背表面场(BSF)。现有生产线目前只能在广泛背表面场情况下操作,而这种广泛背表面场是由Al金属层或液体硼源获得。局部BSFs目前只能以实验室规模实现,其原因见下文详细解释。
广泛背表面场是特别优越的,尤其是在薄Si片(≤250μm)的情况下更是如此,因为在其它情况下电池的效力显著降低。这种BSF目前在>300μm厚度Si片的情况下通过用铝糊剂广泛印刷获得[P.LÖlgen;F.J.Bisschop;W.C.Sinke;R.A.Steeman;L.A.Verhoef等,第六届PV科学技术大会(6th PV Science and EngineeringConference),New Delhi,1992,pp.239]。这种方法的优越之处在于,一方面p+掺杂即BSF是由铝制成,而另一方面电池中产生的电流也由铝耗散。但在薄片情况下,薄片在铝糊剂中腐蚀后会发生弯曲。由于将这种弯曲电池掺入到普通平面设计PV组件中十分困难,因此这种薄片的进一步加工与处理需要特殊的方法。
在DE 19508712 C2和K.A.Münzer,R.R.King,R.E.Schlosser,H.J.Schmidt,J.Schmalzbauer,S.Sterk,H.L.Mayer,《第十三届欧洲光电太阳能会议》(13thEuropean Photovoltaic SolarEnergy Conference),23-27 10.1995,p.1398中,为了解决这一问题,人们尝试使用硼旋涂法。在这种情况下,p++掺杂由硼产生,并且铝骨架是在后续印制过程中由铝糊剂完成。
这种方法的不足之处在于:
a)旋涂法需要大量材料,
b)使用旋涂法均匀涂布角晶片的设备费用过高,
c)产量高但处理费用过高,成批生产非常困难,以及
d)如上所述,晶片不可能选择性成图案。
因此,本发明的目的是提供一种能用于半导体技术的廉价、改进型掺杂糊剂,它不具有上述缺陷,而且可以以简单方式使用。本发明的另一目的是提供相应的丝网印刷糊剂。
本发明的目的由用于选择性形成图案和通过丝网、辊筒、凹版移印、模版印刷或半导体技术中惯常使用的其它印制技术大批印刷Si片用来生产Si片p,p+,p++,n,n+,n++区的掺杂糊剂实现,它包含:
a)一种或多种具有掺杂作用的组分,
b)SiO2基质,
c)溶剂,
d)任选的酸和水,以及任选的
e)添加剂如增稠剂或湿润剂,全部组合物中含有的金属离子形式杂质的相应浓度低于500ppb,优选低于200ppb。
通过测试,发现本文所提供的丝网印刷掺杂糊剂能够克服上述不足。
本发明的糊剂可以包含选自硼盐、氧化硼、硼酸、有机硼化合物、硼-铝化合物和磷盐,氧化磷,五氧化二磷、磷酸、有机磷化合物、有机铝化合物和铝盐的掺杂源。
原则上,主要选自元素周期表第III和V主族的本领域技术人员已知化合物都是合适的。
相应的糊剂此外还包含由一种或多种SiO2前体构成的SiO2基质。
已经发现的本发明掺杂糊剂可以包含一种或多种选自氧化硼(B2O3)、磷酸(H3PO4)、五氧化二磷(P2O5)和铝盐的掺杂源,掺杂源可以以不同浓度使用。
本发明还涉及包含一种或多种选自有机硼、磷和铝化合物的掺杂源,其中的掺杂源可以以不同浓度使用。
此外,本发明的目的还由这种掺杂剂糊剂实现,它包含一种或多种选自氧化硼(B2O3)、磷酸(H3PO4)、五氧化二磷(P2O5)和铝盐或有机铝化合物的掺杂源,以及任选的一种或多种选自有机硼、磷和铝化合物的掺杂源,其中的掺杂源可以以不同浓度使用。
根据本发明,掺杂剂糊剂中包含的SiO2基质可以由通式R′nSi(OR)4-n的有机硅化合物形成,其中:R′代表甲基,乙基或苯基,R代表甲基,乙基,正丙基或异丙基,和n代表0,1或2。
本发明此外还涉及包含SiO2基质的掺杂糊剂,其中的SiO2基质由选自四甲氧基硅烷、四乙氧基硅烷、四丁氧基硅烷的单一或混合物形式的硅烷形成。
本发明还涉及上述新型掺杂糊剂在半导体技术、光电技术或功率电子元件中的应用。
除了掺杂糊剂外,本发明还涉及掩模糊剂(masking pastes),它包含a)SiO2基质,b)溶剂,c)任选的酸和水,以及任选的d)添加剂,如增稠剂或湿润剂,全部组合物中含有的金属离子形式的杂质的相应浓度低于500ppb,优选低于200ppb。
根据本发明,除无掺杂剂外以与上述掺杂糊剂相同的方式组成的掩模糊剂用于半导体技术、光电技术或功率电子元件。
利用丝网印刷糊剂,同样可以低成本、高产量实现广泛(extensive)或选择性(选择发射极)磷掺杂。
目前可以利用光刻法完成的图形化步骤可以通过使用丝网印刷掺杂糊剂便宜地替换。
掩模糊剂(亦即可以称作无掺杂剂添加物的纯粹SiO2基质糊剂)可以用于特别规定的保护层形成。为此,可以将糊剂广泛施加到Si片上,或者以成图案方式施加到硅片上。这样在扩散方法过程中可以保护规定区域不进行掺杂。
本发明的目的由用于选择性生产掺杂磷、硼和硼-铝的硅酸盐层的新型糊剂实现。这些糊剂适用于电子工业中的工业印刷方法。这些方法尤其包括丝网印刷技术或凹版移印法。
依据所期望的应用领域,所用糊剂中各单独组分的浓度与粘度是可变的。
此外,本发明的掺杂糊剂的优越之处在于具有确定基质。这种基质是在扩散法的加热过程中由成SiO2组分形成。与释放硼或磷的组分一起,形成文献所述[K.Spanowsky,《MOS技术中借助自旋玻璃进行的硼扩散》(The Diffusion of Boron with the aid of Spin-on Glassesin MOS Technology),毕业论文,1996;R.Fischer,《阐明磷在硅中扩散机理的实验》(Experiments to Clarify the DiffusionMechanism of Phosphorus in Silicon),毕业论文,1994],并且为本领域技术人员所公知的硼或磷硅酸盐玻璃(B2O3)x*(SiO2)y或(P2O5)x*(SiO2)y。掺杂过程中这种玻璃形成了掺杂剂的实际来源。
掺杂糊剂中SiO2形成组分的量介于0.1-5%重量的可变范围内。对于掺杂组分B2O3或P2O5来说,SiO2与B2O3或P2O5之比可以任意设定,但优选SiO2中掺杂10-80%的掺杂剂。欲在硅中获得的掺杂剂浓度可通过该比例适当控制。正如文献所知[A.Goetzberger;B.Voβ;J.Knobloch,Solar Power:Photovoltaic Technology,TeubnerStudienbücher Stuttgart 1997,pp.40;107],掺杂剂的穿透深度通过扩散时间与扩散温度参数控制。
掺杂方法通过在空气或氧气气氛中控制扩散进行。磷扩散温度为例如900-950℃,而硼扩散温度则为大约950-1250℃。扩散温度由所用Si片决定。在单晶片情况下,由于它们比多晶片具有更高的热稳定性,因而扩散温度也较高,即高达约1250℃。
扩散也可以采用快速热加工(RTP)技术完成。
依据应用目的,扩散时间可以为数分钟至长达60小时,或者更长时间。扩散之后,将Si片用HF(浓度约2-50%HF)处理以溶解所形成的磷或硼硅酸盐(PSG,BSG)玻璃。经此处理后,Si片具有无Si表面。
相对于掺杂糊剂,掺杂剂组分的浓度为0-10%。在无掺杂剂(0%重量)组分的情况下则形成掩模糊剂。它可以在与制备掺杂糊剂相同的方法条件下制得。
溶剂构成糊剂的主要组成。其比例可以占总重量的50-80%。
控制调节粘度范围所必需的、而且对于掺杂剂的适印性(即形成可印刷浆)十分重要的增稠剂,相对于糊剂的总重量,其浓度为约1-20%重量。
具有利于所需目的特性的其它添加剂为消泡剂、粘结慢化剂、增稠剂、湿润剂、流平剂或触变剂。这些添加剂可以积极影响糊剂的适印性。
烷氧基硅烷通常适于形成硅基质,特别是通式R′nSi(OR)4-n的硅烷,其中:R′代表甲基、乙基或苯基,R代表甲基、乙基、正丙基或异丙基,和n代表0,1或2。
适宜硅烷的实例为四甲氧基硅烷、四乙氧基硅烷。四丁氧基硅烷,四丙氧基硅烷以及更高级和混合硅烷实例,亦即具有更长烷基链的硅烷或具有不同烷基残基的硅烷。
使用不同烷基-或烷氧基硅烷的混合物也是有利的。
这些化合物可能有必要进行预水解。对于本发明的糊剂的生产而言,有利的是使用不需要预处理的这种硅氧烷如聚硅氧烷。
当基质在扩散炉中加热时,有机硅化合物例如按下述方程式形成二氧化硅:
为了生产掺杂基质,可以使用硼和磷化合物以及铝化合物用作无机组分。其实例包括氧化硼B2O3,硼酸B(OH)3,磷酸H3PO4,P2O5和Al盐或有机铝化合物。
硼和磷的有机化合物以及有机铝化合物都可以用作有机组分。
而且,添加剂可以与本发明糊剂混合。这些添加剂可以是有机和无机酸,例如硝酸、盐酸、乳酸、草酸、甲酸等。特别是当需要水解有机硅化合物时,加入这些酸。一般来讲,其烷基残基具有n=1-10链长的这类有机酸都可以使用。使用具有残基R=OH或=烷基(n=1-10)的有机酸也是可行的。可以使用的盐的烷基残基不仅可以是直链的,而且也可以是支链的。
当有机硅化合物需要进行预水解时,本发明糊剂中的相应添加剂是必需的。但在例如硅氧烷的情况下,则可省略这种添加剂。
适宜的增稠剂包括Thixoton®(蓖麻油),Borchigen TS®(用于硅酸的流变学添加剂),具有不同性质与性能的膨润土,用于不同极性溶剂混合物的普通流变学添加剂,硝基纤维素,乙基纤维素以及其它纤维素化合物,具有可变性质的聚乙烯吡咯烷酮类,淀粉(+NH4OH),明胶,藻酸,高分散性无定形硅酸(Aerosil®),聚乙烯醇缩丁醛(Mowital®)(良好溶于例如丁基乙二醇),羧甲基纤维素钠(vivistar),热塑性聚酰胺树脂(Eurelon®)(需要在约180℃下蒸煮),有机蓖麻油衍生物(Thixin R®),二酰胺蜡(Thixatrol plus®),膨胀性聚丙烯酸酯(Rheolate®),聚醚氨酯-聚氨酯(Rheolate®),聚醚-多元醇(Rheolate®)。
聚硅氧烷、硅氧烷和三硅氧烷可以用作流平剂。
高度适宜的添加剂尤其为这些,即能与其它组分充分粘结,最好在低于200℃的温度下能够表干预干燥,并且在200-500℃下燃烧不余留任何残留物。
高纯度掺杂糊剂的粘度由增稠剂以及所用溶剂调节。
在光电技术中,对于良好掺杂糊剂的基本要求是被金属化合物污染的可能性最低。特别是金属铁、铬、铜、镍、金、钙等的阳离子(文献中通常将它们称作载流子寿命“杀手”)是尤其不希望的。它们在糊剂中的浓度应尽可能低于500ppb。在特定情况下,其浓度应尽可能不超过200ppb。为了能够遵守这些条件,在特定情形下,只能使用精制原料。
除上述组分外,糊剂的生产还必须加入溶剂。
适当的溶剂包括亲水性多元醇,例如乙二醇,甲基溶纤剂,乙酸甲基溶纤剂,乙基溶纤剂,二乙基溶纤剂,乙酸溶纤剂,乙二醇一丁醚,乙二醇一苯醚,甲氧基甲氧基乙醇,乙二醇一乙酸酯,乙二醇二乙酸酯,二甘醇,二甘醇一甲基醚,二甘醇单乙基醚乙酸酯,二甘醇一丁基醚,二甘醇单丁醚乙酸酯,二甘醇二甲醚,二甘醇甲乙醚,二甘醇二乙醚,二甘醇乙酸酯,三甘醇,三甘醇一甲醚,三甘醇一乙醚,四甘醇,液体聚乙二醇,丙二醇,丙二醇一甲醚,丙二醇一乙醚,丙二醇一丁醚,1-丁氧基乙氧基丙醇,双丙甘醇,双丙甘醇一甲醚,双丙甘醇一乙醚,三丙甘醇一甲醚,聚丙二醇,1,3-丙二醇,丁二醛,1,5-戊二醛,己二醇,甘油,乙酸甘油,二乙酸甘油,三乙酸甘油,三羟甲基丙炔,1,2,6-己三醇或其亲水衍生物,以及脂族或芳族多元醇,例如1,2-丙二醇,1,5-戊二醇,辛二醇以及它们的酯和醚,或这些溶剂的混合物。
例如,适宜的组成可以含有1,2-丁二醇作为其主要组成。已经证明这类溶剂混合物如含有30-95%重量的1,5-戊二醇是适宜的。这种混合物可以含有乙二醇一丁醚(EGB)、二甘醇一丁醚(DGB),双丙甘醇一甲醚(DPM)、1,4-丁二醇(1,4BD)和1,3-丁二醇(1,3BD)作为其它溶剂。
此外,也可以使用亲水性醚如二噁烷、三噁烷、四氢呋喃、四氢吡喃作为溶剂。甲缩醛、乙醛缩二乙醇,甲乙酮、甲基异丁基酮、二乙基酮、丙酮基丙酮、双丙酮醇或亲水性酯如甲酸甲酯、甲酸乙酯、甲酸丙酯、乙酸甲酯和乙酸乙酯也都是适宜的。
试验已经表明,向通常使用的晶片例如4-英寸晶片上涂布50-100mg量糊剂足以实现掺杂效果。根据本发明,向欲处理晶片上涂布糊剂可以用本领域技术人员公知的方式完成。采用丝网印刷法涂布特别适合这一目的。按照已知方式,通过加热到200-600℃,优选加热到约500℃可以将涂布糊剂转化为所需的掺杂层。所需加热时间取决于涂布糊剂层的厚度。
本发明的糊剂适于生产例如半导体技术中的p-n结,特别是还适合用于生产太阳能技术中使用的太阳能电池。
例如,已经发现通过使用本发明的糊剂生产掺杂玻璃层,太阳能电池的效率(通常其生成效率为14%)能够增加约1.5-2%。
为了更好地理解和说明本发明,下文给出了落在本发明保护范围之内的实施例,但本发明并不限于这些实施例。
实施例1:
在烧杯内放入TEOS(1.43g)。然后加入溶剂N-甲基吡咯烷酮NMP(83g),借助搅拌器制备基本混合物。随后依次加入聚乙烯吡咯烷酮(11g)、三氧化二硼(4.6g)和乳酸(3g)。加料期间,还需要剧烈搅拌。加毕后,再搅拌混合物约30分钟。经短暂等待时间后转移到容器内。为了使混合物中形成的气泡能够消失,这种等待时间是必需的。
这种混合物形成一种糊剂,利用它能够在晶片上形成硼玻璃,亦即以受控方式获得具有所需硼浓度的单晶和多晶Si片的掺杂。
所得糊剂适合贮存,易于处理与印刷。而且使用常规溶剂便可从丝网印刷布上除去。2.含有溶剂或溶剂混合物的糊剂实例:I.P糊剂:30g 1,4-丁二醇5g P2O353g 1,2-丙二醇1.5g Trasil®(硅源;具有烷氧基基团的烷基硅树脂)0.2g Foamex N®(聚二甲基硅氧烷;脱气剂)0.2g Aerex®(具有硅氧烷掺料(spikes)的高分子量有机聚合物,消泡剂)3g Byk 410®(改性尿素;触变剂)0.05g TEGO Glide 400®(聚醚-改性聚硅氧烷;流平剂)4g PVP(聚乙烯吡咯烷酮;增稠剂)II. 硼糊剂83g 1,2-丙二醇4.6g B2O31.43g TEOS3g 乳酸2.5g Byk 410®触变剂0.05g TEGO G1ide 400®流平剂0.2g Aerex®消泡剂0.2g Foamex N®脱气剂4g PVP增稠剂II.Si糊剂48g 1,2-丙二醇3g TEOS3g 乳酸35g 乙二醇一丁醚3g Trasil®5g Byk 410®触变剂0.4g TEGO Glide 400®流平剂4g PVP增稠剂
Claims (14)
1.一种通过丝网、辊筒、凹版移印、模版印刷或半导体技术中惯常使用的其它印刷技术选择性和广泛印刷Si片用来在Si片中生产p,p+,p++,n,n+,n++区的掺杂糊剂,它包含:a)一种或多种具有掺杂作用的组分,b)SiO2基质,c)溶剂,d)任选的酸和水,以及任选的e)添加剂如增稠剂或湿润剂,全部组合物中含有的金属离子形式杂质的相应浓度低于500ppb,优选低于200ppb。
2.根据权利要求1的掺杂糊剂,它包含选自硼盐、氧化硼、硼酸、有机硼化合物、硼-铝化合物和磷盐,氧化磷,五氧化二磷、磷酸、有机磷化合物、有机铝化合物和铝盐的掺杂源。
3.根据权利要求1和2的掺杂糊剂,它包含由一种或多种SiO2前体构成的SiO2基质。
4.根据权利要求1-3的掺杂糊剂,它包含一种或多种选自氧化硼(B2O3)、硼酸B(OH)3、磷酸(H3PO4)、五氧化二磷(P2O5)以及铝盐和有机Al化合物的掺杂源,掺杂源可以以不同浓度使用。
5.根据权利要求1-3的掺杂糊剂,它包含一种或多种选自有机硼、磷和铝化合物的掺杂源,其中的掺杂源可以以不同浓度使用。
6.根据权利要求1-3的掺杂糊剂,它包含一种或多种选自氧化硼(B2O3)、硼酸B(OH)3、磷酸(H3PO4)、五氧化二磷(P2O5)和铝盐的掺杂源,以及任选的一种或多种选自有机硼、磷和铝化合物的掺杂源,其中的掺杂源可以以不同浓度使用。
7.根据权利要求1-3的掺杂糊剂,它包含由通式R′nSi(OR)4-n的硅烷化合物形成的SiO2基质,其中:R′代表甲基,乙基或苯基,R代表甲基,乙基,正丙基或异丙基,和n代表0,1或2。
8.根据权利要求1-3和7的掺杂糊剂,它包含由选自如下的单一或混合物形式的硅烷形成的SiO3基质:四甲氧基硅烷、四乙氧基硅烷、四丁氧基硅烷、四丙氧基硅烷、四甲氧基硅烷。
9.根据权利要求1-8的掺杂糊剂,它包含一种或多种选自亲水性多元醇、其醚或酯,亲水性醚、醛、酮或酯或它们的混合物的溶剂。
10.根据权利要求9的掺杂糊剂,它含有30-95%重量的1,5-丙二醇,它是以与一种或多种选自乙二醇一丁醚(EGB)、二甘醇一丁醚(DGB)、双丙甘醇一甲醚(DPM)、1,4-丁二醇(1,4BD)和1,3-丁二醇(1,3BD)的溶剂和/或一种或多种选自如下的溶剂形成的混合物形式存在:二噁烷、三噁烷、四氢呋喃和四氢吡喃、甲缩醛、乙醛缩二乙醇,甲乙酮、甲基异丁基酮、二乙基酮、丙酮基丙酮、双丙酮醇、甲酸甲酯、甲酸乙酯、甲酸丙酯、乙酸甲酯和乙酸乙酯。
11.根据权利要求1-10的掺杂糊剂,它含有原硅酸四乙酯作为SiO2基质,1,2-丙二醇、N-甲基吡咯烷酮、乙二醇一丁醚、1,4-丁二醇或其混合物作为溶剂,乳酸作为酸,P2O5或B2O3作为掺杂剂,以及作为添加剂的流平剂、触变剂、增稠剂和任选的消泡剂和脱气剂,掺杂糊剂中SiO2形成组分的量为0.1-5%重量,并且对于掺杂剂组分B2O3或P2O5来说,SiO2中掺杂剂的量为10-80%。
12.权利要求1-11的掺杂糊剂在半导体技术、光电技术或功率电子元件方面的应用。
13.掩模糊剂,它包含:
a)SiO2基质,
b)溶剂,
c)任选的酸和水,以及任选的
d)添加剂,增稠剂或湿润剂,全部组合物中含有的金属离子形式杂质的相应浓度低于500ppb,优选低于200ppb。
14.权利要求13的掩模糊剂在半导体技术、光电技术和功率电子元件方面的应用。
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Also Published As
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EP1166366A1 (de) | 2002-01-02 |
MXPA01009113A (es) | 2002-02-28 |
NO20014384D0 (no) | 2001-09-10 |
KR20010112313A (ko) | 2001-12-20 |
JP2002539615A (ja) | 2002-11-19 |
CA2367137A1 (en) | 2000-09-14 |
EP2276058B1 (de) | 2016-02-17 |
NO20014384L (no) | 2001-09-10 |
IL145333A (en) | 2009-06-15 |
EP2276058A1 (de) | 2011-01-19 |
IL145333A0 (en) | 2002-06-30 |
KR100697439B1 (ko) | 2007-03-20 |
ATE535943T1 (de) | 2011-12-15 |
EP1166366B1 (de) | 2011-11-30 |
IN2001KO01049A (zh) | 2006-03-17 |
DE19910816A1 (de) | 2000-10-05 |
AU3960100A (en) | 2000-09-28 |
AU766807B2 (en) | 2003-10-23 |
TW492081B (en) | 2002-06-21 |
WO2000054341A1 (de) | 2000-09-14 |
PL350966A1 (en) | 2003-02-24 |
US6695903B1 (en) | 2004-02-24 |
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