NO20014384L - Dopepasta for å danne soner med p, p+ og n, n+ i halvledere - Google Patents
Dopepasta for å danne soner med p, p+ og n, n+ i halvledereInfo
- Publication number
- NO20014384L NO20014384L NO20014384A NO20014384A NO20014384L NO 20014384 L NO20014384 L NO 20014384L NO 20014384 A NO20014384 A NO 20014384A NO 20014384 A NO20014384 A NO 20014384A NO 20014384 L NO20014384 L NO 20014384L
- Authority
- NO
- Norway
- Prior art keywords
- baptismal
- semiconductors
- paste
- form zones
- ppb
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229910021645 metal ion Inorganic materials 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000002562 thickening agent Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000080 wetting agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/02—Polysilicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Die Bonding (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Dopepasta på basis av bor, fosfor eller bor-aluminium for fremstilling av soner med p, p+ og n, n+ i monokrystallinske og polykrystallinske Si-skiver. Det beskrives også anvendelse av korresponderende pastaer som maskeringspastaer ved fremstilling av halvledere, innen kraftelektronikk eller innen fotoelektriske anvendelser.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19910816A DE19910816A1 (de) | 1999-03-11 | 1999-03-11 | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
PCT/EP2000/001694 WO2000054341A1 (de) | 1999-03-11 | 2000-02-29 | Dotierpasten zur erzeugung von p, p+ und n, n+ bereichen in halbleitern |
Publications (2)
Publication Number | Publication Date |
---|---|
NO20014384D0 NO20014384D0 (no) | 2001-09-10 |
NO20014384L true NO20014384L (no) | 2001-09-10 |
Family
ID=7900579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20014384A NO20014384L (no) | 1999-03-11 | 2001-09-10 | Dopepasta for å danne soner med p, p+ og n, n+ i halvledere |
Country Status (16)
Country | Link |
---|---|
US (1) | US6695903B1 (no) |
EP (2) | EP2276058B1 (no) |
JP (1) | JP2002539615A (no) |
KR (1) | KR100697439B1 (no) |
CN (1) | CN1343376A (no) |
AT (1) | ATE535943T1 (no) |
AU (1) | AU766807B2 (no) |
CA (1) | CA2367137A1 (no) |
DE (1) | DE19910816A1 (no) |
IL (2) | IL145333A0 (no) |
IN (1) | IN2001KO01049A (no) |
MX (1) | MXPA01009113A (no) |
NO (1) | NO20014384L (no) |
PL (1) | PL350966A1 (no) |
TW (1) | TW492081B (no) |
WO (1) | WO2000054341A1 (no) |
Families Citing this family (145)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL152497A0 (en) * | 2000-04-28 | 2003-05-29 | Merck Patent Gmbh | Etching pastes for inorganic surfaces |
JP3922334B2 (ja) * | 2000-07-12 | 2007-05-30 | サンケン電気株式会社 | 半導体装置の製造方法 |
JP3922337B2 (ja) * | 2000-08-28 | 2007-05-30 | サンケン電気株式会社 | 液状不純物源材料及びこれを使用した半導体装置の製造方法 |
DE10058031B4 (de) * | 2000-11-23 | 2007-11-22 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Bildung leicht dotierter Halogebiete und Erweiterungsgebiete in einem Halbleiterbauelement |
DE10104726A1 (de) | 2001-02-02 | 2002-08-08 | Siemens Solar Gmbh | Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht |
JP2002299274A (ja) * | 2001-04-02 | 2002-10-11 | Sanken Electric Co Ltd | 半導体装置の製造方法 |
JP4726354B2 (ja) * | 2001-08-22 | 2011-07-20 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
JP2003179243A (ja) * | 2001-08-31 | 2003-06-27 | Basf Ag | 光電池活性材料およびこれを含む電池 |
DE10150040A1 (de) | 2001-10-10 | 2003-04-17 | Merck Patent Gmbh | Kombinierte Ätz- und Dotiermedien |
JP3910072B2 (ja) * | 2002-01-30 | 2007-04-25 | 東洋アルミニウム株式会社 | ペースト組成物およびそれを用いた太陽電池 |
JP4549655B2 (ja) * | 2003-11-18 | 2010-09-22 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 機能性塗料 |
JP4368230B2 (ja) * | 2004-03-30 | 2009-11-18 | 電気化学工業株式会社 | ホウ素化合物の固定方法及びホウ素拡散源 |
EP1739690B1 (en) * | 2004-07-01 | 2015-04-01 | Toyo Aluminium Kabushiki Kaisha | Paste composition and solar cell element employing same |
JP2006156646A (ja) * | 2004-11-29 | 2006-06-15 | Sharp Corp | 太陽電池の製造方法 |
US7790574B2 (en) * | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
JP4481869B2 (ja) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
JP2006310368A (ja) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法及び太陽電池 |
DE102005025933B3 (de) * | 2005-06-06 | 2006-07-13 | Centrotherm Photovoltaics Gmbh + Co. Kg | Dotiergermisch für die Dotierung von Halbleitern |
JP4541243B2 (ja) * | 2005-07-22 | 2010-09-08 | 日本合成化学工業株式会社 | ホウ素拡散用塗布液 |
JP4541328B2 (ja) * | 2005-07-22 | 2010-09-08 | 日本合成化学工業株式会社 | リン拡散用塗布液 |
JP2007049079A (ja) * | 2005-08-12 | 2007-02-22 | Sharp Corp | マスキングペースト、その製造方法およびマスキングペーストを用いた太陽電池の製造方法 |
EP1923906A1 (en) * | 2005-08-12 | 2008-05-21 | Sharp Kabushiki Kaisha | Masking paste, method for producing same, and method for manufacturing solar cell using masking paste |
JP4684056B2 (ja) * | 2005-09-16 | 2011-05-18 | シャープ株式会社 | 太陽電池の製造方法 |
JP5283824B2 (ja) * | 2006-01-18 | 2013-09-04 | 東京応化工業株式会社 | 膜形成組成物 |
JP4827550B2 (ja) * | 2006-02-14 | 2011-11-30 | シャープ株式会社 | 太陽電池の製造方法 |
US8637694B2 (en) * | 2006-02-28 | 2014-01-28 | Basf Se | Antimicrobial compounds |
US8076570B2 (en) | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
EP2016528B1 (de) * | 2006-05-04 | 2009-08-26 | Elektrobit Wireless Communications Ltd. | Verfahren zum Betrieb eines RFID-Netzwerks |
JP4876723B2 (ja) * | 2006-06-14 | 2012-02-15 | セイコーエプソン株式会社 | 静電アクチュエータの製造方法、液滴吐出ヘッドの製造方法及び液滴吐出装置の製造方法 |
JP5026008B2 (ja) * | 2006-07-14 | 2012-09-12 | 東京応化工業株式会社 | 膜形成組成物 |
FR2906405B1 (fr) * | 2006-09-22 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique |
FR2906406B1 (fr) * | 2006-09-26 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de cellule photovoltaique a heterojonction en face arriere. |
US8512581B2 (en) * | 2006-10-09 | 2013-08-20 | Solexel, Inc. | Methods for liquid transfer coating of three-dimensional substrates |
JP2008186927A (ja) * | 2007-01-29 | 2008-08-14 | Sharp Corp | 裏面接合型太陽電池とその製造方法 |
CN101675531B (zh) * | 2007-02-16 | 2013-03-06 | 纳克公司 | 太阳能电池结构、光生伏打模块及对应的工艺 |
DE102007012277A1 (de) * | 2007-03-08 | 2008-09-11 | Gebr. Schmid Gmbh & Co. | Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle |
EP2137739B1 (en) * | 2007-04-25 | 2017-11-01 | Heraeus Precious Metals North America Conshohocken LLC | Thick film conductor formulations comprising silver and nickel or silver and nickel alloys and solar cells made therefrom |
DE602008003218D1 (de) * | 2007-05-07 | 2010-12-09 | Georgia Tech Res Inst | Herstellung eines hochwertigen rückseitigen kontakts mit lokaler rückseitiger siebdruckfläche |
US8309844B2 (en) | 2007-08-29 | 2012-11-13 | Ferro Corporation | Thick film pastes for fire through applications in solar cells |
JP5236914B2 (ja) * | 2007-09-19 | 2013-07-17 | シャープ株式会社 | 太陽電池の製造方法 |
US20090092745A1 (en) * | 2007-10-05 | 2009-04-09 | Luca Pavani | Dopant material for manufacturing solar cells |
JP5382606B2 (ja) * | 2007-12-25 | 2014-01-08 | 日本電気硝子株式会社 | 半導体用ホウ素ドープ材の製造方法 |
EP2220687A1 (en) * | 2007-11-19 | 2010-08-25 | Applied Materials, Inc. | Solar cell contact formation process using a patterned etchant material |
TW200939509A (en) * | 2007-11-19 | 2009-09-16 | Applied Materials Inc | Crystalline solar cell metallization methods |
US8460983B1 (en) | 2008-01-21 | 2013-06-11 | Kovio, Inc. | Method for modifying and controlling the threshold voltage of thin film transistors |
JP5329107B2 (ja) * | 2008-02-28 | 2013-10-30 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
US20090239363A1 (en) * | 2008-03-24 | 2009-09-24 | Honeywell International, Inc. | Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes |
JP5357442B2 (ja) * | 2008-04-09 | 2013-12-04 | 東京応化工業株式会社 | インクジェット用拡散剤組成物、当該組成物を用いた電極及び太陽電池の製造方法 |
DE102008019402A1 (de) * | 2008-04-14 | 2009-10-15 | Gebr. Schmid Gmbh & Co. | Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat |
US20090286349A1 (en) * | 2008-05-13 | 2009-11-19 | Georgia Tech Research Corporation | Solar cell spin-on based process for simultaneous diffusion and passivation |
WO2010009295A2 (en) | 2008-07-16 | 2010-01-21 | Applied Materials, Inc. | Hybrid heterojunction solar cell fabrication using a metal layer mask |
US20100035422A1 (en) * | 2008-08-06 | 2010-02-11 | Honeywell International, Inc. | Methods for forming doped regions in a semiconductor material |
US8053867B2 (en) * | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
CN102132422A (zh) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | 利用印刷介电阻障的背接触太阳能电池 |
US7951696B2 (en) * | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
KR101002282B1 (ko) * | 2008-12-15 | 2010-12-20 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US8518170B2 (en) * | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US7820532B2 (en) * | 2008-12-29 | 2010-10-26 | Honeywell International Inc. | Methods for simultaneously forming doped regions having different conductivity-determining type element profiles |
US20100294349A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
KR101194064B1 (ko) * | 2009-06-08 | 2012-10-24 | 제일모직주식회사 | 에칭 및 도핑 기능을 가지는 페이스트 조성물 |
US7910393B2 (en) * | 2009-06-17 | 2011-03-22 | Innovalight, Inc. | Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid |
US8324089B2 (en) * | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
NL2003324C2 (en) * | 2009-07-31 | 2011-02-02 | Otb Solar Bv | Photovoltaic cell with a selective emitter and method for making the same. |
JP5815215B2 (ja) * | 2009-08-27 | 2015-11-17 | 東京応化工業株式会社 | 拡散剤組成物、および不純物拡散層の形成方法 |
JP2013504177A (ja) * | 2009-09-08 | 2013-02-04 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 光電池のための導体 |
JP5628931B2 (ja) * | 2009-10-30 | 2014-11-19 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 選択エミッタを含む、ソーラーセルの製造方法 |
KR20110071378A (ko) * | 2009-12-21 | 2011-06-29 | 현대중공업 주식회사 | 후면전계형 이종접합 태양전지의 제조방법 |
JP4868079B1 (ja) * | 2010-01-25 | 2012-02-01 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池セルの製造方法 |
JP5447397B2 (ja) * | 2010-02-03 | 2014-03-19 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池セルの製造方法 |
US20110195541A1 (en) * | 2010-02-05 | 2011-08-11 | Hitachi Chemical Company, Ltd. | Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell |
US20110195540A1 (en) | 2010-02-05 | 2011-08-11 | Hitachi Chemical Company, Ltd. | Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell |
TWI539493B (zh) | 2010-03-08 | 2016-06-21 | 黛納羅伊有限責任公司 | 用於摻雜具有分子單層之矽基材之方法及組合物 |
KR101127076B1 (ko) * | 2010-03-19 | 2012-03-22 | 성균관대학교산학협력단 | 폴리머를 포함한 도핑 페이스트를 이용한 선택적 이미터 형성 방법 |
CN102844841B (zh) * | 2010-04-23 | 2016-06-15 | 日立化成工业株式会社 | n型扩散层形成组合物、n型扩散层的制造方法及太阳能电池元件的制造方法 |
TWI558676B (zh) * | 2010-04-23 | 2016-11-21 | 日立化成股份有限公司 | 形成n型擴散層的組成物、n型擴散層的製造方法及太陽電池元件的製造方法 |
WO2011132778A1 (ja) * | 2010-04-23 | 2011-10-27 | 日立化成工業株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法 |
TWI556289B (zh) * | 2010-04-23 | 2016-11-01 | 日立化成股份有限公司 | 形成p型擴散層的組成物、p型擴散層的製造方法及太陽電池元件的製造方法 |
US9359513B1 (en) * | 2010-05-07 | 2016-06-07 | Thin Film Electronics Asa | Dopant inks, methods of making dopant inks, and methods of using dopant inks |
EP2398071B1 (en) * | 2010-06-17 | 2013-01-16 | Imec | Method for forming a doped region in a semiconductor layer of a substrate and use of such method |
CN102959684A (zh) * | 2010-06-24 | 2013-03-06 | 日立化成工业株式会社 | 杂质扩散层形成组合物、n型扩散层形成组合物、n型扩散层的制造方法、p型扩散层形成组合物、p型扩散层的制造方法以及太阳能电池元件的制造方法 |
JP5625538B2 (ja) * | 2010-06-24 | 2014-11-19 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池セルの製造方法 |
JP5691268B2 (ja) * | 2010-07-07 | 2015-04-01 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池セルの製造方法 |
US8105869B1 (en) | 2010-07-28 | 2012-01-31 | Boris Gilman | Method of manufacturing a silicon-based semiconductor device by essentially electrical means |
JP5803080B2 (ja) * | 2010-09-24 | 2015-11-04 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層形成組成物の製造方法、p型拡散層の製造方法、及び太陽電池セルの製造方法 |
JP5666254B2 (ja) * | 2010-11-11 | 2015-02-12 | 東京応化工業株式会社 | 拡散剤組成物および不純物拡散層の形成方法 |
JP5666267B2 (ja) * | 2010-11-25 | 2015-02-12 | 東京応化工業株式会社 | 塗布型拡散剤組成物 |
US8858843B2 (en) * | 2010-12-14 | 2014-10-14 | Innovalight, Inc. | High fidelity doping paste and methods thereof |
US8778231B2 (en) | 2010-12-16 | 2014-07-15 | E I Du Pont De Nemours And Company | Aluminum pastes comprising boron nitride and their use in manufacturing solar cells |
JP5541139B2 (ja) * | 2010-12-16 | 2014-07-09 | 日立化成株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池セルの製造方法 |
JP5541138B2 (ja) * | 2010-12-16 | 2014-07-09 | 日立化成株式会社 | p型拡散層形成組成物、p型拡散層の製造方法及び太陽電池セルの製造方法 |
CN105161404A (zh) * | 2011-01-13 | 2015-12-16 | 日立化成株式会社 | p型扩散层形成用组合物、p型扩散层的制造方法和太阳能电池元件的制造方法 |
WO2012096311A1 (ja) | 2011-01-13 | 2012-07-19 | 日立化成工業株式会社 | p型拡散層形成組成物、p型拡散層を有するシリコン基板の製造方法、太陽電池素子の製造方法、及び太陽電池 |
US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
KR20140041423A (ko) * | 2011-02-17 | 2014-04-04 | 히타치가세이가부시끼가이샤 | n 형 확산층 형성 조성물, n 형 확산층의 제조 방법, 및 태양 전지 셀의 제조 방법 |
JP2012234990A (ja) * | 2011-05-02 | 2012-11-29 | Hitachi Chem Co Ltd | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法 |
JP2012234989A (ja) * | 2011-05-02 | 2012-11-29 | Hitachi Chem Co Ltd | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 |
US9156740B2 (en) * | 2011-05-03 | 2015-10-13 | Innovalight, Inc. | Ceramic boron-containing doping paste and methods therefor |
KR20140019473A (ko) * | 2011-07-05 | 2014-02-14 | 히타치가세이가부시끼가이샤 | n 형 확산층 형성 조성물, n 형 확산층의 제조 방법 및 태양 전지 소자의 제조 방법 |
US20150099352A1 (en) * | 2011-07-19 | 2015-04-09 | Hitachi Chemical Company, Ltd. | COMPOSITION FOR FORMING n-TYPE DIFFUSION LAYER, METHOD OF PRODUCING n-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL ELEMENT |
JP5842431B2 (ja) * | 2011-07-22 | 2016-01-13 | 日立化成株式会社 | n型拡散層の製造方法、及び太陽電池素子の製造方法 |
JP5842432B2 (ja) * | 2011-07-22 | 2016-01-13 | 日立化成株式会社 | p型拡散層の製造方法、及び太陽電池素子の製造方法 |
JP2013026524A (ja) * | 2011-07-22 | 2013-02-04 | Hitachi Chem Co Ltd | n型拡散層形成組成物、n型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池 |
CN105448677A (zh) | 2011-07-25 | 2016-03-30 | 日立化成株式会社 | 半导体基板及其制造方法、太阳能电池元件、以及太阳能电池 |
WO2013022076A1 (ja) * | 2011-08-11 | 2013-02-14 | 日本合成化学工業株式会社 | 太陽電池の製法およびそれにより得られた太陽電池 |
US8629294B2 (en) * | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
WO2013028689A2 (en) * | 2011-08-25 | 2013-02-28 | Honeywell International Inc. | Phosphate esters, phosphate-comprising dopants, and methods for fabricating phosphate-comprising dopants using silicon monomers |
US8586397B2 (en) * | 2011-09-30 | 2013-11-19 | Sunpower Corporation | Method for forming diffusion regions in a silicon substrate |
US8975170B2 (en) * | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
TWI424584B (zh) * | 2011-11-30 | 2014-01-21 | Au Optronics Corp | 製作太陽能電池之方法 |
JP5339013B1 (ja) * | 2012-01-10 | 2013-11-13 | 日立化成株式会社 | 太陽電池用基板の製造方法および太陽電池素子の製造方法 |
JP5339014B1 (ja) * | 2012-01-10 | 2013-11-13 | 日立化成株式会社 | バリア層形成用組成物、太陽電池用基板の製造方法及び太陽電池素子の製造方法 |
WO2013105603A1 (ja) * | 2012-01-10 | 2013-07-18 | 日立化成株式会社 | バリア層形成用組成物、バリア層、太陽電池用基板の製造方法及び太陽電池素子の製造方法 |
WO2013106225A1 (en) | 2012-01-12 | 2013-07-18 | Applied Materials, Inc. | Methods of manufacturing solar cell devices |
JP6178543B2 (ja) * | 2012-01-25 | 2017-08-09 | 直江津電子工業株式会社 | P型拡散層用塗布液 |
WO2013125254A1 (ja) * | 2012-02-23 | 2013-08-29 | 日立化成株式会社 | 不純物拡散層形成組成物、不純物拡散層付き半導体基板の製造方法、及び太陽電池素子の製造方法 |
TW201335278A (zh) * | 2012-02-23 | 2013-09-01 | Hitachi Chemical Co Ltd | 不純物擴散層形成組成物、帶有不純物擴散層的半導體基板的製造方法以及太陽電池元件的製造方法 |
KR101387718B1 (ko) * | 2012-05-07 | 2014-04-22 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
CN102797040B (zh) * | 2012-08-22 | 2015-08-12 | 中国科学院电工研究所 | 一种硼(b)扩散掺杂的方法 |
US9306087B2 (en) * | 2012-09-04 | 2016-04-05 | E I Du Pont De Nemours And Company | Method for manufacturing a photovoltaic cell with a locally diffused rear side |
US9196486B2 (en) * | 2012-10-26 | 2015-11-24 | Innovalight, Inc. | Inorganic phosphate containing doping compositions |
US8853438B2 (en) | 2012-11-05 | 2014-10-07 | Dynaloy, Llc | Formulations of solutions and processes for forming a substrate including an arsenic dopant |
WO2014101990A1 (de) * | 2012-12-28 | 2014-07-03 | Merck Patent Gmbh | Flüssige dotiermedien zur lokalen dotierung von siliziumwafern |
US10134942B2 (en) | 2012-12-28 | 2018-11-20 | Merck Patent Gmbh | Doping media for the local doping of silicon wafers |
SG10201705330UA (en) * | 2012-12-28 | 2017-07-28 | Merck Patent Gmbh | Printable diffusion barriers for silicon wafers |
EP2938762A1 (de) * | 2012-12-28 | 2015-11-04 | Merck Patent GmbH | Oxidmedien zum gettern von verunreinigungen aus siliziumwafern |
US9093598B2 (en) * | 2013-04-12 | 2015-07-28 | Btu International, Inc. | Method of in-line diffusion for solar cells |
CN105378895B (zh) * | 2013-07-04 | 2018-03-02 | 东丽株式会社 | 杂质扩散组合物及半导体元件的制造方法 |
US9076719B2 (en) | 2013-08-21 | 2015-07-07 | The Regents Of The University Of California | Doping of a substrate via a dopant containing polymer film |
JP6072129B2 (ja) | 2014-04-30 | 2017-02-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ドーパント含有ポリマー膜を用いた基体のドーピング |
US20150325442A1 (en) * | 2014-05-07 | 2015-11-12 | Dynaloy, Llc | Formulations of Solutions and Processes for Forming a Substrate Including a Dopant |
JP6855794B2 (ja) * | 2015-01-30 | 2021-04-07 | 東レ株式会社 | 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池 |
CN107532300A (zh) * | 2015-04-15 | 2018-01-02 | 默克专利股份有限公司 | 用于硅晶片的局部掺杂的抑制寄生扩散和基于溶胶‑凝胶的可印刷的掺杂介质 |
KR20170139580A (ko) * | 2015-04-15 | 2017-12-19 | 메르크 파텐트 게엠베하 | 공확산 공정에서 인 확산을 동시 억제하는 스크린 인쇄 가능한 붕소 도핑 페이스트 |
JP2015213177A (ja) * | 2015-06-15 | 2015-11-26 | 日立化成株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池 |
CN105070841B (zh) * | 2015-07-21 | 2017-11-24 | 苏州大学 | 一种钙钛矿太阳能电池的制备方法 |
JP2016027665A (ja) * | 2015-09-28 | 2016-02-18 | 日立化成株式会社 | p型拡散層の製造方法、及び太陽電池素子の製造方法 |
JP2016036034A (ja) * | 2015-09-28 | 2016-03-17 | 日立化成株式会社 | n型拡散層の製造方法、及び太陽電池素子の製造方法 |
ES2817539T3 (es) * | 2016-03-23 | 2021-04-07 | Panasonic Ip Man Co Ltd | Célula solar, módulo de célula solar y procedimiento de fabricación de célula solar |
WO2018021121A1 (ja) * | 2016-07-29 | 2018-02-01 | 東レ株式会社 | 不純物拡散組成物およびこれを用いた半導体素子の製造方法 |
CN108257857A (zh) * | 2018-01-11 | 2018-07-06 | 华东理工大学 | 一种多元醇硼酸酯络合物硼扩散源及其制备方法 |
CN111370304B (zh) * | 2018-12-25 | 2023-03-28 | 天津环鑫科技发展有限公司 | 一种硼铝源及其配置方法 |
US11978815B2 (en) | 2018-12-27 | 2024-05-07 | Solarpaint Ltd. | Flexible photovoltaic cell, and methods and systems of producing it |
CN111628047B (zh) * | 2020-06-01 | 2023-02-28 | 常州顺风太阳能科技有限公司 | 一种N型TOPCon太阳能电池的制作方法 |
WO2023021515A1 (en) * | 2021-08-19 | 2023-02-23 | Solarpaint Ltd. | Improved flexible solar panels and photovoltaic devices, and methods and systems for producing them |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL99619C (no) * | 1955-06-28 | |||
US4104091A (en) * | 1977-05-20 | 1978-08-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Application of semiconductor diffusants to solar cells by screen printing |
US4243427A (en) * | 1977-11-21 | 1981-01-06 | Trw Inc. | High concentration phosphoro-silica spin-on dopant |
US4152824A (en) * | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells |
JPS5534258A (en) * | 1978-09-01 | 1980-03-10 | Tokyo Denshi Kagaku Kabushiki | Coating solution for forming silica film |
LU83831A1 (fr) * | 1981-12-10 | 1983-09-01 | Belge Etat | Procede de fabrication de dispositifs semi-conducteurs et dispositifs semi-conducteurs ainsi obtenus |
US4571366A (en) * | 1982-02-11 | 1986-02-18 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
US4588455A (en) * | 1984-08-15 | 1986-05-13 | Emulsitone Company | Planar diffusion source |
JPS61279665A (ja) | 1985-06-05 | 1986-12-10 | Sumitomo Metal Mining Co Ltd | 部分乾式メツキ方法 |
US4785041A (en) * | 1987-12-31 | 1988-11-15 | Dow Corning Corporation | Screen printable organosiloxane resin coating compositions |
US4891331A (en) * | 1988-01-21 | 1990-01-02 | Oi-Neg Tv Products, Inc. | Method for doping silicon wafers using Al2 O3 /P2 O5 composition |
JPH01199678A (ja) * | 1988-02-03 | 1989-08-11 | Mitsubishi Electric Corp | 高純度SiO↓2薄膜の形成方法 |
JPH0266916A (ja) * | 1988-08-31 | 1990-03-07 | Nec Corp | 積層型セラミックコンデンサの製造方法 |
JP2658395B2 (ja) * | 1989-06-08 | 1997-09-30 | 三菱マテリアル株式会社 | ヒ素拡散用塗布液 |
JP2639591B2 (ja) * | 1989-10-03 | 1997-08-13 | 東京応化工業株式会社 | ドーパントフィルム及びそれを使用した不純物拡散方法 |
JPH0485821A (ja) * | 1990-07-26 | 1992-03-18 | Tonen Chem Corp | ホウ素拡散ソースおよびホウ素拡散方法 |
US5472488A (en) * | 1990-09-14 | 1995-12-05 | Hyundai Electronics America | Coating solution for forming glassy layers |
US5358597A (en) | 1991-09-04 | 1994-10-25 | Gte Laboratories Incorporated | Method of protecting aluminum nitride circuit substrates during electroless plating using sol-gel oxide films and article made therefrom |
WO1993024960A1 (en) | 1992-05-27 | 1993-12-09 | Mobil Solar Energy Corporation | Solar cells with thick aluminum contacts |
US5458912A (en) * | 1993-03-08 | 1995-10-17 | Dow Corning Corporation | Tamper-proof electronic coatings |
US5554684A (en) | 1993-10-12 | 1996-09-10 | Occidental Chemical Corporation | Forming polyimide coating by screen printing |
DE19508712C2 (de) | 1995-03-10 | 1997-08-07 | Siemens Solar Gmbh | Solarzelle mit Back-Surface-Field und Verfahren zur Herstellung |
JP3824334B2 (ja) * | 1995-08-07 | 2006-09-20 | 東京応化工業株式会社 | シリカ系被膜形成用塗布液及び被膜形成方法 |
JPH09283458A (ja) * | 1996-04-12 | 1997-10-31 | Toshiba Corp | 半導体用塗布拡散剤 |
JPH09283457A (ja) * | 1996-04-12 | 1997-10-31 | Toshiba Corp | 半導体用塗布拡散剤 |
US5776235A (en) * | 1996-10-04 | 1998-07-07 | Dow Corning Corporation | Thick opaque ceramic coatings |
-
1999
- 1999-03-11 DE DE19910816A patent/DE19910816A1/de not_active Withdrawn
-
2000
- 2000-02-29 WO PCT/EP2000/001694 patent/WO2000054341A1/de active IP Right Grant
- 2000-02-29 AT AT00918752T patent/ATE535943T1/de active
- 2000-02-29 PL PL00350966A patent/PL350966A1/xx unknown
- 2000-02-29 IL IL14533300A patent/IL145333A0/xx unknown
- 2000-02-29 US US09/936,285 patent/US6695903B1/en not_active Expired - Lifetime
- 2000-02-29 AU AU39601/00A patent/AU766807B2/en not_active Ceased
- 2000-02-29 CA CA002367137A patent/CA2367137A1/en not_active Abandoned
- 2000-02-29 CN CN00804875A patent/CN1343376A/zh active Pending
- 2000-02-29 EP EP10182228.6A patent/EP2276058B1/de not_active Expired - Lifetime
- 2000-02-29 JP JP2000604469A patent/JP2002539615A/ja active Pending
- 2000-02-29 KR KR20017011471A patent/KR100697439B1/ko not_active IP Right Cessation
- 2000-02-29 EP EP00918752A patent/EP1166366B1/de not_active Expired - Lifetime
- 2000-03-07 TW TW089104087A patent/TW492081B/zh not_active IP Right Cessation
-
2001
- 2001-09-09 IL IL145333A patent/IL145333A/en not_active IP Right Cessation
- 2001-09-10 NO NO20014384A patent/NO20014384L/no not_active Application Discontinuation
- 2001-09-10 MX MXPA01009113 patent/MXPA01009113A/es unknown
- 2001-10-08 IN IN1049KO2001 patent/IN2001KO01049A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2000054341A1 (de) | 2000-09-14 |
AU3960100A (en) | 2000-09-28 |
KR20010112313A (ko) | 2001-12-20 |
US6695903B1 (en) | 2004-02-24 |
MXPA01009113A (es) | 2002-02-28 |
IL145333A0 (en) | 2002-06-30 |
EP1166366B1 (de) | 2011-11-30 |
CN1343376A (zh) | 2002-04-03 |
AU766807B2 (en) | 2003-10-23 |
EP2276058A1 (de) | 2011-01-19 |
EP1166366A1 (de) | 2002-01-02 |
NO20014384D0 (no) | 2001-09-10 |
PL350966A1 (en) | 2003-02-24 |
ATE535943T1 (de) | 2011-12-15 |
JP2002539615A (ja) | 2002-11-19 |
DE19910816A1 (de) | 2000-10-05 |
IL145333A (en) | 2009-06-15 |
KR100697439B1 (ko) | 2007-03-20 |
CA2367137A1 (en) | 2000-09-14 |
EP2276058B1 (de) | 2016-02-17 |
TW492081B (en) | 2002-06-21 |
IN2001KO01049A (no) | 2006-03-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NO20014384L (no) | Dopepasta for å danne soner med p, p+ og n, n+ i halvledere | |
MY130650A (en) | Compositions for removing etching residue and use thereof | |
CA2342856A1 (en) | Stabilized two-part disinfecting system and compositions and methods related thereto | |
BR9915174A (pt) | Complexo de prata iÈnica | |
DE69521701T2 (de) | Feststoffen aus grünen tee, elektrolyten und kohlenhydraten enthaltende getränkezusammensetzungen zur verbesserung der zellenhydration und trinkbarkeit | |
HK1047063A1 (zh) | 用於半導體器件的清洗有機和等離子蝕刻的殘渣的內酰胺組合物 | |
NO20071196L (no) | Rengjoringssammensetninger for mikroelektroniske substrater | |
PT1075258E (pt) | Analogos gordos novos para o tratamento da obesidade | |
BR0308385A (pt) | Cristais de ácido (met) acrìlico e processo para produzir e purificar ácido (met) acrìlico aquoso | |
BR0317822A (pt) | Composição fluoroquìmica | |
ATE155648T1 (de) | Antimikrobielle zusammensetzung und verfahren zu ihrer herstellung | |
SE8405924L (sv) | Nya azoforeningar | |
EE9900022A (et) | Värvuskompositsioon, mis koosneb pürogalloolstruktuure sisaldavast agendist, raud(II)soolast ning orgaanilisest happest | |
MXPA03006455A (es) | Mejoras en relacion a composiciones detergentes liquidas. | |
FR2825273B1 (fr) | Composition pour le traitement des signes cutanes du vieillissement | |
AU2003295866A1 (en) | Effervescent compositions | |
DK0737086T3 (da) | Sammensætning og fremgangsmåde til at nedsætte eller forhindre metal- og syreforurening i klippemateriale-afløbsvand | |
DE69833692D1 (de) | Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel | |
TR199800210T2 (xx) | Didepsipeptid temelli endoparazitisid kompozisyonlar, yeni didepsipeptidler ve bunlar�n �retimi i�in i�lemler. | |
ATE282010T1 (de) | Verfahren zur herstellung von keramikkugeln zur wasserbehandlung | |
WO2005019112A3 (en) | A method of reducing chemical oxygen contaminants in water | |
ATE178345T1 (de) | Umweltfreundliche schnee- und eisbeseitigungsflüssigkeit | |
DK0382155T3 (da) | Middel til belægning af ståltråd og fremgangsmåde til trækning af ståltråd under anvendelse af midlet | |
DE50104689D1 (de) | Verfahren zur herstellung von waschmittelgranulaten | |
NO960271L (no) | Tiokarbamoylforbindelser anvendt som mikrobiocider |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |