DE69833692D1 - Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel - Google Patents

Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel

Info

Publication number
DE69833692D1
DE69833692D1 DE69833692T DE69833692T DE69833692D1 DE 69833692 D1 DE69833692 D1 DE 69833692D1 DE 69833692 T DE69833692 T DE 69833692T DE 69833692 T DE69833692 T DE 69833692T DE 69833692 D1 DE69833692 D1 DE 69833692D1
Authority
DE
Germany
Prior art keywords
silicon oxide
glycol solvent
complex
acid solution
fluoride salt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69833692T
Other languages
English (en)
Other versions
DE69833692T2 (de
Inventor
William Wojtczak
Long Nguyen
A Fine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Application granted granted Critical
Publication of DE69833692D1 publication Critical patent/DE69833692D1/de
Publication of DE69833692T2 publication Critical patent/DE69833692T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
DE69833692T 1997-12-19 1998-12-16 Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel Expired - Lifetime DE69833692T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6833997P 1997-12-19 1997-12-19
US68339P 1997-12-19
PCT/US1998/026989 WO1999033094A1 (en) 1997-12-19 1998-12-16 Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent

Publications (2)

Publication Number Publication Date
DE69833692D1 true DE69833692D1 (de) 2006-04-27
DE69833692T2 DE69833692T2 (de) 2006-11-23

Family

ID=22081929

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69833692T Expired - Lifetime DE69833692T2 (de) 1997-12-19 1998-12-16 Ätzlösung für das selektive ätzen von siliziumoxid mit fluorid-salz, komplexmittel und glykol-lösungsmittel

Country Status (7)

Country Link
EP (1) EP1062682B1 (de)
JP (1) JP2001527286A (de)
KR (1) KR100607530B1 (de)
AT (1) ATE319186T1 (de)
DE (1) DE69833692T2 (de)
TW (1) TW579386B (de)
WO (1) WO1999033094A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US7192910B2 (en) * 2003-10-28 2007-03-20 Sachem, Inc. Cleaning solutions and etchants and methods for using same
US20070207622A1 (en) 2006-02-23 2007-09-06 Micron Technology, Inc. Highly selective doped oxide etchant
WO2007140193A1 (en) * 2006-05-25 2007-12-06 Honeywell International Inc. Selective tantalum carbide etchant, methods of production and uses thereof
WO2009111719A2 (en) * 2008-03-07 2009-09-11 Advanced Technology Materials, Inc. Non-selective oxide etch wet clean composition and method of use
KR101296797B1 (ko) * 2010-03-24 2013-08-14 구수진 폐태양전지로부터 고순도 폴리 실리콘을 회수하는 방법
KR102111056B1 (ko) * 2014-03-28 2020-05-14 동우 화인켐 주식회사 실리콘 산화막용 비수계 식각액 조성물
TWI686461B (zh) * 2019-02-01 2020-03-01 才將科技股份有限公司 一種具有高矽／二氧化矽蝕刻的選擇比的矽蝕刻劑及其應用
CN112410036B (zh) * 2020-10-29 2021-09-07 湖北兴福电子材料有限公司 一种低选择性的bpsg和peteos薄膜的蚀刻液
WO2023176642A1 (ja) * 2022-03-14 2023-09-21 日本化薬株式会社 処理液およびその使用方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4568540A (en) * 1984-04-18 1986-02-04 Johnson & Johnson Oral hygiene compositions
US4921572A (en) * 1989-05-04 1990-05-01 Olin Corporation Etchant solutions containing hydrogen fluoride and a polyammonium fluoride salt
SU1737024A1 (ru) * 1990-01-02 1992-05-30 Новочеркасский Политехнический Институт Им.Серго Орджоникидзе Электролит блест щего никелировани
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5421906A (en) * 1993-04-05 1995-06-06 Enclean Environmental Services Group, Inc. Methods for removal of contaminants from surfaces
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
US5698503A (en) * 1996-11-08 1997-12-16 Ashland Inc. Stripping and cleaning composition

Also Published As

Publication number Publication date
EP1062682A1 (de) 2000-12-27
DE69833692T2 (de) 2006-11-23
KR20010033352A (ko) 2001-04-25
EP1062682A4 (de) 2001-07-04
EP1062682B1 (de) 2006-03-01
TW579386B (en) 2004-03-11
WO1999033094A1 (en) 1999-07-01
ATE319186T1 (de) 2006-03-15
KR100607530B1 (ko) 2006-08-02
JP2001527286A (ja) 2001-12-25

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Legal Events

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8364 No opposition during term of opposition