MX2009011954A - Formacion de un contacto posterior de alta calidad con un campo superficial posterior local impreso con serigrafia. - Google Patents

Formacion de un contacto posterior de alta calidad con un campo superficial posterior local impreso con serigrafia.

Info

Publication number
MX2009011954A
MX2009011954A MX2009011954A MX2009011954A MX2009011954A MX 2009011954 A MX2009011954 A MX 2009011954A MX 2009011954 A MX2009011954 A MX 2009011954A MX 2009011954 A MX2009011954 A MX 2009011954A MX 2009011954 A MX2009011954 A MX 2009011954A
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MX
Mexico
Prior art keywords
back surface
surface field
contact
screen
formation
Prior art date
Application number
MX2009011954A
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English (en)
Inventor
Ajeet Rohatgi
Vichai Meemongkolkiat
Original Assignee
Georgia Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39672716&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=MX2009011954(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Georgia Tech Res Inst filed Critical Georgia Tech Res Inst
Publication of MX2009011954A publication Critical patent/MX2009011954A/es

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Materials For Medical Uses (AREA)
  • Cleaning In General (AREA)

Abstract

Se describe una celda solar de silicio delgada que tiene una estabilización dieléctrica posterior y contacto trasero con el campo superficial posterior local. Específicamente, la celda solar se puede fabricar a partir de una oblea de silicio cristalina que tiene un espesor de 50 a 500 micrómetros. Se aplica una capa de barrera y una capa dieléctrica por lo menos a la superficie posterior de la oblea de silicio para proteger la oblea de silicio de la deformación cuando se forma el contacto trasero. Por lo menos se hace una abertura a la capa dieléctrica. Un contacto de aluminio que proporciona un campo superficial posterior se forma en la abertura y sobre la capa dieléctrica. El contacto de aluminio se puede aplicar por serigrafía de una pasta de aluminio que tiene de uno a 12 por ciento atómico de silicio y luego aplicar un tratamiento térmico a 750 grados Celsius.
MX2009011954A 2007-05-07 2008-05-06 Formacion de un contacto posterior de alta calidad con un campo superficial posterior local impreso con serigrafia. MX2009011954A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91632707P 2007-05-07 2007-05-07
PCT/US2008/005863 WO2008137174A1 (en) 2007-05-07 2008-05-06 Formation of high quality back contact with screen-printed local back surface field

Publications (1)

Publication Number Publication Date
MX2009011954A true MX2009011954A (es) 2010-01-29

Family

ID=39672716

Family Applications (2)

Application Number Title Priority Date Filing Date
MX2009011954A MX2009011954A (es) 2007-05-07 2008-05-06 Formacion de un contacto posterior de alta calidad con un campo superficial posterior local impreso con serigrafia.
MX2009011383A MX2009011383A (es) 2007-05-07 2008-05-07 Metodo para limpiar una abertura superficial de celda solar con una pasta de grabado solar.

Family Applications After (1)

Application Number Title Priority Date Filing Date
MX2009011383A MX2009011383A (es) 2007-05-07 2008-05-07 Metodo para limpiar una abertura superficial de celda solar con una pasta de grabado solar.

Country Status (11)

Country Link
US (3) US7741225B2 (es)
EP (2) EP2149155B9 (es)
JP (2) JP2010527146A (es)
CN (2) CN101720512B (es)
AT (2) ATE486370T1 (es)
CA (2) CA2684967C (es)
DE (2) DE602008003218D1 (es)
ES (2) ES2354400T3 (es)
MX (2) MX2009011954A (es)
TW (2) TW200908360A (es)
WO (2) WO2008137174A1 (es)

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