JP6398144B2 - 太陽電池金属被覆の無電解導電率向上の方法 - Google Patents
太陽電池金属被覆の無電解導電率向上の方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 221
- 238000001465 metallisation Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims description 355
- 239000002184 metal Substances 0.000 claims description 355
- 229910052782 aluminium Inorganic materials 0.000 claims description 95
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 92
- 238000000151 deposition Methods 0.000 claims description 77
- 238000009713 electroplating Methods 0.000 claims description 68
- 230000008569 process Effects 0.000 claims description 55
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 42
- 238000007772 electroless plating Methods 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 23
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 239000004332 silver Substances 0.000 claims description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 19
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 19
- 229910052804 chromium Inorganic materials 0.000 claims description 19
- 239000011651 chromium Substances 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 229910052718 tin Inorganic materials 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 239000011701 zinc Substances 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052707 ruthenium Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- 239000010948 rhodium Substances 0.000 claims description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 238000001723 curing Methods 0.000 description 35
- 239000006117 anti-reflective coating Substances 0.000 description 16
- 239000002019 doping agent Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 238000007650 screen-printing Methods 0.000 description 8
- 239000000976 ink Substances 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 4
- 239000000839 emulsion Substances 0.000 description 4
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- -1 but not limited to Chemical compound 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000011112 process operation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000011416 infrared curing Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002285 radioactive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000005844 autocatalytic reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
- C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
本出願は、2012年12月10日出願の米国特許仮出願第61/956,175号及び2013年3月15日出願の同第61/794,499号の利益を主張するものであり、これらの開示内容全体は、参照により本明細書に組み入れられる。
本明細書に記載される対象の実施形態は、概ね太陽電池に関する。より具体的には、主題の実施形態は、太陽電池の構造及び製造方法に関する。
[項目1]
通常動作中は太陽に向かう前面と、前記前面とは反対側の裏面とを有する、太陽電池のコンタクト領域を形成する方法であって、
第1の金属を含むペーストを前記太陽電池の基板より上方に堆積させる工程と、
前記ペーストを硬化させて第1の金属層を形成する工程と、
第2の金属層を前記第1の金属層上に無電解めっきする工程と、
第3の金属層を前記第2の金属層上に電解めっきする工程と、を含み、前記第2の金属層は、前記第1の金属層を前記第3の金属層に電気的に結合する、方法。
[項目2]
前記ペーストを前記基板より上方に堆積させる工程は、ペーストを前記基板より上方のポリシリコン領域上に堆積させる工程を含む、項目1に記載の方法。
[項目3]
前記ペーストを堆積させる工程は、アルミニウムペーストを堆積させる工程を含む、項目1に記載の方法。
[項目4]
前記アルミニウムペーストを堆積させる工程は、少なくとも0.5ミクロンの厚さを有するアルミニウムペーストを堆積させる工程を含む、項目3に記載の方法。
[項目5]
前記第2の金属層は、前記第3の金属層から前記基板への金属の拡散を防止するように適合されたバリア金属を含む、項目1に記載の方法。
[項目6]
前記第2の金属層を無電解めっきする工程は、ニッケル、金、銀、ロジウム、クロミウム、亜鉛、錫、及びカドミウムからなる群から選択された金属を無電解めっきする工程を含む、項目1に記載の方法。
[項目7]
前記第2の金属層を無電解めっきする工程は、少なくとも0.1ミクロンの厚さを有する金属層を無電解めっきする工程を含む、項目1に記載の方法。
[項目8]
前記第3の金属層を電解めっきする工程は、銅、錫、アルミニウム、銀、金、クロム、鉄、ニッケル、亜鉛、ルテニウム、パラジウム、及び白金からなる群から選択された金属を電解めっきする工程を含む、項目1に記載の方法。
[項目9]
第4の金属層を前記第3の金属層上に電解めっきする工程を更に含む、項目1に記載の方法。
[項目10]
前記第4の金属層を電解めっきする工程は、銅、錫、アルミニウム、銀、金、クロム、鉄、ニッケル、亜鉛、ルテニウム、パラジウム、及び白金からなる群から選択された金属を電解めっきする工程を含む、項目9に記載の方法。
[項目11]
太陽電池のコンタクト領域を形成する方法であって、前記太陽電池は、通常動作中に太陽に向かう前面と、該前面の反対側の裏面とを有し、前記方法は、
櫛型パターンで、アルミニウムペーストを前記太陽電池の基板より上方に堆積させる工程と、
前記アルミニウムペーストを硬化させてアルミニウムの層を形成する工程と、
少なくとも0.1ミクロンの厚さを有する第2の金属層を前記アルミニウムの層上に無電解めっきする工程と、
第3の金属層を前記第2の金属層上に電解めっきする工程であって、前記第2の金属層は、前記アルミニウムの層を前記第3の金属層に電気的に結合する、工程と、
第4の金属層を前記第3の金属層上に電解めっきする工程と、を含む、方法。
[項目12]
アルミニウムペーストを堆積させる工程は、少なくとも0.5ミクロンの厚さを有するアルミニウムペーストを堆積させる工程を含む、項目11に記載の方法。
[項目13]
前記第2の金属層は、前記第3の金属層から前記基板への金属の拡散を防止するように適合されたバリア金属を含む、項目11に記載の方法。
[項目14]
前記アルミニウムペーストを前記基板より上方に堆積させる工程は、アルミニウムペーストを前記基板より上方のポリシリコン領域上に堆積させる工程を含む、項目11に記載の方法。
[項目15]
前記アルミニウムペーストを堆積させる工程は、スクリーン印刷、スピンコーティング、及びインクジェット印刷からなる群から選択された方法を用いて堆積させる工程を含む、項目11に記載の方法。
[項目16]
前記第3の金属層及び前記第4の金属層を電解めっきする工程は、銅、錫、アルミニウム、銀、金、クロミウム、鉄、ニッケル、亜鉛、ルテニウム、パラジウム、及び白金からなる群から選択された金属を電解めっきする工程を含む、項目11に記載の方法。
[項目17]
通常動作中は太陽に向かう前面と、前記前面とは反対側の裏面とを有する、太陽電池のコンタクト領域を形成する方法であって、
櫛型パターンで、少なくとも0.5ミクロンの厚さを有するアルミニウムペーストを前記太陽電池の基板より上方に堆積させる工程と、
前記アルミニウムペーストを熱硬化させてアルミニウムの層を形成する工程と、
少なくとも0.1ミクロンの厚さを有するバリア金属を含む第2の金属層を前記アルミニウムの層上に無電解めっきする工程であって、前記バリア金属は、前記基板への金属の拡散を防止するように適合される、工程と、
第3の金属層を前記第2の金属層上に電解めっきする工程であって、前記第2の金属層は、前記アルミニウムの層を前記第3の金属層に電気的に結合する、工程と、
第4の金属層を前記第3の金属層上に電解めっきする工程と、を含む、方法。
[項目18]
前記アルミニウムペーストを前記基板より上方に堆積させる工程は、アルミニウムペーストを前記基板より上方のポリシリコン領域上に堆積させる工程を含む、項目17に記載の方法。
[項目19]
前記アルミニウムペーストを前記太陽電池上に堆積させる工程は、スクリーン印刷、スピンコーティング、及びインクジェット印刷からなる群から選択された方法を用いてアルミニウムペーストを前記太陽電池上に堆積させる工程を含む、項目17に記載の方法。
[項目20]
前記太陽電池は、バックコンタクト型太陽電池、フロントコンタクト型太陽電池、単結晶シリコン太陽電池、多結晶シリコン太陽電池、アモルファスシリコン太陽電池、薄膜シリコン太陽電池、銅インジウム・ガリウム・セレン(CIGS)太陽電池、及びテルル化カドミウム太陽電池からなる群から選択された太陽電池を含む、項目17に記載の方法。
Claims (10)
- 通常動作中は太陽に向かう前面と、前記前面とは反対側の裏面とを有する太陽電池を製造する方法であって、前記太陽電池のコンタクト領域を形成する工程を備え、
前記太陽電池の前記コンタクト領域を形成する工程は、
第1の金属を含むペーストを前記太陽電池の基板より上方の第1の領域に堆積させる工程と、
前記ペーストを硬化させて第1の金属層を形成する工程と、
前記基板より上方の前記第1の金属層が形成されていない第2の領域、及び、前記太陽電池の側縁部にエッチングレジストを堆積させる工程と、
第2の金属層を前記第1の金属層上に無電解めっきする工程と、
第3の金属層を前記第2の金属層上に電解めっきする工程であって、前記第2の金属層は、前記第1の金属層を前記第3の金属層に電気的に結合する、工程と、
前記エッチングレジストを除去する工程と
を含む、方法。 - 前記ペーストを前記基板より上方に堆積させる工程は、ペーストを前記基板より上方のポリシリコン領域上に堆積させる工程を含む、請求項1に記載の方法。
- 前記ペーストを堆積させる工程は、アルミニウムペーストを堆積させる工程を含む、請求項1又は2に記載の方法。
- 前記アルミニウムペーストを堆積させる工程は、少なくとも0.5ミクロンの厚さを有するアルミニウムペーストを堆積させる工程を含む、請求項3に記載の方法。
- 前記第2の金属層は、前記第3の金属層から前記基板への金属の拡散を防止するように適合されたバリア金属を含む、請求項1から4のいずれか一項に記載の方法。
- 前記第2の金属層を無電解めっきする工程は、ニッケル、金、銀、ロジウム、クロミウム、亜鉛、錫、及びカドミウムからなる群から選択された金属を無電解めっきする工程を含む、請求項1から5のいずれか一項に記載の方法。
- 前記第2の金属層を無電解めっきする工程は、少なくとも0.1ミクロンの厚さを有する金属層を無電解めっきする工程を含む、請求項1から6のいずれか一項に記載の方法。
- 前記第3の金属層を電解めっきする工程は、銅、錫、アルミニウム、銀、金、クロム、鉄、ニッケル、亜鉛、ルテニウム、パラジウム、及び白金からなる群から選択された金属を電解めっきする工程を含む、請求項1から7のいずれか一項に記載の方法。
- 前記太陽電池の前記コンタクト領域を形成する工程は、前記エッチングレジストを除去する工程の前に、第4の金属層を前記第3の金属層上に電解めっきする工程を更に含む、請求項1から8のいずれか一項に記載の方法。
- 前記第4の金属層を電解めっきする工程は、銅、錫、アルミニウム、銀、金、クロム、鉄、ニッケル、亜鉛、ルテニウム、パラジウム、及び白金からなる群から選択された金属を電解めっきする工程を含む、請求項9に記載の方法。
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PCT/US2013/073441 WO2014093137A1 (en) | 2012-12-10 | 2013-12-05 | Methods for electroless conductivity enhancement of solar cell metallization |
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