WO2019007188A1 - 双面polo电池及其制备方法 - Google Patents

双面polo电池及其制备方法 Download PDF

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WO2019007188A1
WO2019007188A1 PCT/CN2018/090560 CN2018090560W WO2019007188A1 WO 2019007188 A1 WO2019007188 A1 WO 2019007188A1 CN 2018090560 W CN2018090560 W CN 2018090560W WO 2019007188 A1 WO2019007188 A1 WO 2019007188A1
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layer
silicon wafer
sided
double
passivation
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刘阳
孙铁囤
姚伟忠
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常州亿晶光电科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • the invention relates to the technical field of solar cell preparation, in particular to a double-sided POLO battery and a preparation method thereof.
  • the back passivation battery is an emerging high-efficiency battery technology, which effectively deactivates the backside of the battery and reduces the emissivity of the back surface, thereby effectively absorbing the long-wavelength light, which makes the battery efficiency have a big leap. And due to the intervention of the passivation layer, the warpage of the battery sheet is also improved.
  • the metal and semiconductor contact negative charge values in conventional batteries are approximately 4000 amps/cm 2 and are between 100 and 300 if passivated. At present, PERC passivation effect is better, but PERC also has two shortcomings. The first is that PERC still has some metal and semiconductor contact, and the other is that the back surface of PERC is point contact, which increases the distance of carrier transport. .
  • the technical problem to be solved by the present invention is to provide a double-sided POLO battery in order to solve the problem of high negative charge generated by contact between metal and semiconductor in the prior art, and lateral transmission of small or multiple points of point contact.
  • the preparation method thereof in order to overcome the above disadvantages, the POLO (POLy-Si on passivating interfacial Oxides) battery is designed, and the double-sided passivation is performed by using a silicon oxide plus polysilicon layer, the effect of which is not only passivating the surface defects, but also increasing the weakness.
  • the response of light also inactivates the contact between the metal and the semiconductor, reducing the contact negative charge value; the second is because it is fully passivated, there is no point contact, the base region has no lateral transmission of minority or multiple, and the third is polysilicon. For indirect bandgap, current loss is small.
  • a double-sided POLO battery comprising a silicon wafer substrate, wherein the silicon wafer substrate is provided with an SiOx tunneling oxide layer, a polysilicon layer and an ITO conductive layer from the inside to the outside. Film layer.
  • a method for preparing a double-sided POLO battery comprising sequentially performing double-sided cleaning and texturing on a silicon wafer, full passivation, ion implantation, plating conductive film and screen printing, wherein the whole passivation process is performed by using silicon oxide and polysilicon Passivation forms a fully passivated layer.
  • the invention adds polysilicon to double-sided passivation, solves the problem of high negative charge of metal-semiconductor contact of PERC battery, and improves current loss caused by point contact.
  • the specificity of the full passivation includes:
  • the SiOx tunneling oxide layer (2) is first prepared on both sides of the silicon wafer by wet chemical or wet oxygen method or ultraviolet method, and then prepared by PECVD or LPCVD on the double-sided SiOx tunneling oxide layer (2) of the silicon wafer.
  • the polysilicon layer (3) is doped with the front side and the back side of the silicon wafer by ion implantation, respectively, and finally a non-contact full passivation layer is formed by silicon oxide and polysilicon.
  • the preparation method of the double-sided POLO battery includes specific steps:
  • the tunneling oxide layer is prepared, and the SiOx tunneling oxide layer (2) is grown on both sides of the silicon wafer by wet chemical or wet ozone method or ultraviolet method, and the film thickness is controlled to be 1 to 10 nm, and then annealed;
  • a passivation layer using PECVD or LPCVD to prepare a polysilicon layer (3) on the double-sided SiOx tunneling oxide layer (2) of the silicon wafer, the film thickness of which is controlled to be 1-20 nm;
  • the silicon wafer of the completed ITO film is screen-sintered, and the back electrode and the positive electrode are silk-printed.
  • the invention has the beneficial effects that the double-sided POLO battery of the invention and the preparation method thereof use double-layer passivation by using silicon oxide and polysilicon layer, and the effect thereof is not only passivating the surface defects of the surface of the silicon wafer, but also increasing the weak light.
  • the response also inactivates the metal-to-semiconductor contact on the back side, reducing the contact negative charge value; the second is due to full passivation, no point contact, and the base region (base region) has no lateral transmission of fewer or more sub-portions.
  • the third is that polysilicon is an indirect band gap and the current loss is small.
  • FIG. 1 is a schematic view showing the structure of a battery prepared by the present invention.
  • silicon substrate 2, SiOx tunneling oxide layer, 3, polysilicon layer, 4, ITO conductive film layer.
  • a preferred embodiment of the present invention is a double-sided POLO battery comprising a silicon wafer substrate 1 having SiOx tunneling oxide layers 2 and polysilicon disposed on the both sides of the wafer substrate 1 from the inside to the outside.
  • a method for preparing a double-sided POLO battery comprising: double-sided cleaning and texturing on a silicon wafer, full passivation, ion implantation, degree conductive film and screen printing, and passivation using silicon oxide and polysilicon in a full passivation process A full passivation layer is formed.
  • the specific steps include:
  • the tunneling oxide layer is prepared, and the SiOx tunneling oxide layer 2 is grown on both sides of the silicon wafer by wet chemical or wet ozone method or ultraviolet method, and the film thickness is controlled to be 1 to 10 nm, and then annealed;
  • a passivation layer using PECVD or LPCVD to prepare a polysilicon layer (3) on the double-sided SiOx tunneling oxide layer 2 of the silicon wafer, the film thickness of which is controlled to be 1-20 nm;
  • Ion implantation is performed by ion implantation on the front and back sides of the silicon wafer to form P + Ploy-Si layer and N + Ploy-Si layer respectively; finally, non-contact full passivation is formed by silicon oxide and polysilicon.
  • PERC point contact type, the preparation method of the POLO battery of the present invention, the metal and the semiconductor are not in contact, and the point contact with the PERC is non-contact type.
  • the silicon wafer of the completed ITO film is screen-sintered, and the back electrode and the positive electrode are silk-printed.
  • the specificity of the full passivation includes:

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Abstract

本发明涉及太阳能电池制备技术领域，尤其涉及一种双面POLO电池及其制备方法，利用氧化硅加多晶硅层进行双面钝化，其作用一是不仅钝化了硅片表面的表面缺陷，增加弱光的响应，也钝化了背面的金属与半导体的接触，减少了接触负电荷值；其二是由于是全钝化，没有点接触，其基区没有少子或多子的横向传输，其三是多晶硅为间接带隙，电流损失小。

Description

双面POLO电池及其制备方法 技术领域
本发明涉及太阳能电池制备技术领域，尤其涉及一种双面POLO电池及其制备方法。
背景技术
目前，背钝化电池作为一种新兴的高效电池技术，有效的钝化了电池背面复合，并降低了背面的发射率，从而有效的吸收了长波段的光，使得电池效率有了大的飞跃；并且由于钝化层的介入，电池片的翘曲度也得到了一定的改善。
常规的电池中的金属和半导体接触负电荷值大概在4000费安/平方厘米，若进行钝化后其值在100～300之间。目前PERC钝化效果较好，但PERC也存在两个缺点，第一是PERC仍有部分的金属与半导体的接触，另一个是PERC的背表面是点接触，增大了载流子运输的距离。
发明内容
本发明要解决的技术问题是：为了解决现有技术中金属与半导体的接触产生的较高负电荷，点接触的少子或多子的横向传输的技术问题，本发明提供一种双面POLO电池及其制备方法，本发明为克服上述缺点，设计POLO(POLy-Si on passivating interfacial Oxides)电池，利用氧化硅加多晶硅层进行双面钝化，其作用一是不仅钝化了表面缺陷，增加弱光的响应，也钝化了金属与半导体的接触，减少了接触负电荷值；其二是由于是全钝化，没有点接触，其基区没有少子或多子的横向传输，其三是多晶硅为间接带隙，电流损失小。
本发明解决其技术问题所采用的技术方案是：一种双面POLO电池，包括硅片基底，所述硅片基底的双面由内向外依次设置有SiOx隧穿氧化层、多晶硅层以及ITO导电薄膜层。
一种双面POLO电池的制备方法，包括对硅片依次进行双面清洗制绒、全钝化、离子注入、镀导电薄膜和丝网印刷，所述全钝化工艺中采用氧化硅加多晶硅进行钝化形成全钝化层。本发明加入了多晶硅进行双面钝化，解决PERC电池的金属与半导体接触的高负电荷问题，并改善因点接触造成的电流损失。
所述全钝化的具体包括：
利用湿法化学或湿氧法或紫外法在硅片的双面先制备SiOx隧穿氧化层(2)，再利用PECVD或LPCVD在硅片的双面的SiOx隧穿氧化层(2)上制备多晶硅层(3)，再利用离子注入分别对硅片的正面和背面进行掺杂，最终制备得到由氧化硅加多晶硅形成非接触式的全钝化层。
所述的双面POLO电池的制备方法，具体步骤包括：
清洗制绒，将硅片在HCl/HNO 3混合溶液中清洗，去除表面损伤层、切割线痕以及金属离子等，利用NaOH进行表面制绒，因各向异性反应，表面生成金字塔结构；
制备隧穿氧化层，利用湿法化学或湿法臭氧法或紫外法在硅片的双面进行生长SiOx隧穿氧化层(2)，其膜厚控制在1～10nm，随后对其进行退火；
钝化层，利用PECVD或LPCVD在硅片的双面的SiOx隧穿氧化层(2)上制备多晶硅层(3)，其膜厚控制在1～20nm；
离子注入，分别对硅片的正面和背面进行离子注入，分别形成P +Ploy-Si层和N +Ploy-Si层；
镀导电膜，利用PVD在硅片的双面，即在P +Ploy-Si层和N +Ploy-Si层沉积导电薄膜ITO，双面其方阻控制在20～200Ω；
丝网印刷，将完成ITO薄膜的硅片进行丝网印刷烧结，丝印出背电极和正电极即可。
本发明的有益效果是，本发明的双面POLO电池及其制备方法，利用氧化硅加多晶硅层进行双面钝化，其作用一是不仅钝化了硅片表面的表面缺陷，增加弱光的响应，也钝化了背面的金属与半导体的接触，减少了接触负电荷值；其二是由于是全钝化，没有点接触，其基区(基底区域)没有少子或多子的横向传输，其三是多晶硅为间接带隙，电流损失小。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明制备的电池结构示意图。
图中：1、硅片基底，2、SiOx隧穿氧化层，3、多晶硅层，4、ITO导电薄膜层。
具体实施方式
现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图，仅以示意方式说明本发明的基本结构，因此其仅显示与本发明有关的构成。
如图1所示，是本发明最优实施例，一种双面POLO电池，包括硅片基底1，所述硅片基底1的双面由内向外依次设置有SiOx隧穿氧化层2、多晶硅层3以及ITO导电薄膜层4。
一种双面POLO电池的制备方法，包括对硅片依次进行双面清洗制绒、全钝化、离子注入、度导电薄膜和丝网印刷，全钝化工艺中采用氧化硅加多晶硅进行钝化形成全钝化层。
具体步骤包括：
清洗制绒，将硅片在HCl/HNO 3混合溶液中清洗，去除表面损伤层、切割线痕以及金属离子等，利用NaOH进行表面制绒，因各向异性反应，表面生成金字塔结构；
制备隧穿氧化层，利用湿法化学或湿法臭氧法或紫外法在硅片的双面进行生长SiOx隧穿氧化层2，其膜厚控制在1～10nm，随后对其进行退火；
钝化层，利用PECVD或LPCVD在硅片的双面的SiOx隧穿氧化层2上制备多晶硅层(3)，其膜厚控制在1～20nm；
离子注入，分别对硅片的正面和背面进行离子注入进行掺杂，分别形成P +Ploy-Si层和N +Ploy-Si层；最终制备得到由氧化硅加多晶硅形成非接触式的全钝化层；(PERC是点接触式的，本发明的POLO电池的制备方法，金属和半导体是没有接触的，相对PERC的点接触，这就是非接触式的。)
镀导电膜，利用PVD在硅片的双面，即在P +Ploy-Si层和N +Ploy-Si层沉积导电薄膜ITO，双面其方阻控制在20～200Ω；
丝网印刷，将完成ITO薄膜的硅片进行丝网印刷烧结，丝印出背电极和正电极即可。所述全钝化的具体包括：
以上述依据本发明的理想实施例为启示，通过上述的说明内容，相关工作人员完全可以在不偏离本项发明技术思想的范围内，进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容，必须要根据权利要求范围来确定其技术性范围。

Claims (4)

  1. 一种双面POLO电池，其特征在于：包括硅片基底(1)，所述硅片基底(1)的双面由内向外依次设置有SiOx隧穿氧化层(2)、多晶硅层(3)以及ITO导电薄膜层(4)。
  2. 一种双面POLO电池的制备方法，包括对硅片依次进行双面清洗制绒、全钝化、离子注入、镀导电薄膜和丝网印刷，其特征在于：所述全钝化工艺中采用氧化硅加多晶硅进行钝化形成全钝化层。
  3. 如权利要求2所述的双面POLO电池的制备方法，其特征在于：所述全钝化的具体包括：
    利用湿法化学或湿氧法或紫外法在硅片的双面先制备SiOx隧穿氧化层(2)，再利用PECVD或LPCVD在硅片的双面的SiOx隧穿氧化层(2)上制备多晶硅层(3)，再利用离子注入分别对硅片的正面和背面进行掺杂，最终制备得到由氧化硅加多晶硅形成非接触式的全钝化层。
  4. 如权利要求2所述的双面POLO电池的制备方法，其特征在于：具体步骤包括：
    清洗制绒，将硅片在HCl/HNO 3混合溶液中清洗，去除表面损伤层、切割线痕以及金属离子等，利用NaOH进行表面制绒，因各向异性反应，表面生成金字塔结构；
    制备隧穿氧化层，利用湿法化学或湿法臭氧法或紫外法在硅片的双面进行生长SiOx隧穿氧化层(2)，其膜厚控制在1～10nm，随后对其进行退火；
    钝化层，利用PECVD或LPCVD在硅片的双面的SiOx隧穿氧化层(2)上制备多晶硅层(3)，其膜厚控制在1～20nm；
    离子注入，分别对硅片的正面和背面进行离子注入，分别形成P +Ploy-Si层和N +Ploy-Si层；
    镀导电膜，利用PVD在硅片的双面，即在P +Ploy-Si层和N +Ploy-Si层沉积导电薄膜ITO，双面其方阻控制在20～200Ω；
    丝网印刷，将完成ITO薄膜的硅片进行丝网印刷烧结，丝印出背电极和正电极即可。
PCT/CN2018/090560 2017-07-07 2018-06-11 双面polo电池及其制备方法 WO2019007188A1 (zh)

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