JP7212786B2 - 結晶シリコン太陽電池およびその製造方法 - Google Patents
結晶シリコン太陽電池およびその製造方法 Download PDFInfo
- Publication number
- JP7212786B2 JP7212786B2 JP2021538877A JP2021538877A JP7212786B2 JP 7212786 B2 JP7212786 B2 JP 7212786B2 JP 2021538877 A JP2021538877 A JP 2021538877A JP 2021538877 A JP2021538877 A JP 2021538877A JP 7212786 B2 JP7212786 B2 JP 7212786B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- silicon
- layer
- solar cell
- doped polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 187
- 229910052710 silicon Inorganic materials 0.000 claims description 187
- 239000010703 silicon Substances 0.000 claims description 187
- 239000010410 layer Substances 0.000 claims description 163
- 238000002161 passivation Methods 0.000 claims description 71
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 60
- 229920005591 polysilicon Polymers 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 38
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 33
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 19
- 239000006117 anti-reflective coating Substances 0.000 claims description 17
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 14
- 239000002003 electrode paste Substances 0.000 claims description 14
- 239000005360 phosphosilicate glass Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 238000005553 drilling Methods 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 7
- 238000002407 reforming Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 2
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 173
- 239000010408 film Substances 0.000 description 67
- 239000011247 coating layer Substances 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000003698 laser cutting Methods 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000013585 weight reducing agent Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
(1) シリコンウェーハの表面にテクスチャリング面を形成することと、
(2) シリコンウェーハの表面にトンネル層、およびドープトポリシリコン層を堆積させることと、
(3) シリコンウェーハの表面に第1の反射防止膜層を堆積させることと、
(4) シリコンウェーハの表面の非電極領域のトンネル層、ドープトポリシリコン層と第1の反射防止膜層を除去することと、を含む。一実施例では、ステップ(4)は、レーザーを使用して実行することができる。
(5) シリコンウェーハの表面にテクスチャリング面を再形成することと、
(6) シリコンウェーハの表面にリン拡散を施すことと、
(7) シリコンウェーハの裏面と周辺のPN接合、および表面のホスホシリケートガラスを除去することと、
(8) シリコンウェーハの裏面にパッシベーション膜を堆積させることと、
(9) シリコンウェーハの表面に第2の反射防止膜層を堆積させることと、
(10) シリコンウェーハの裏面にレーザー孔あけ加工を行うことと、
(11) シリコンウェーハの裏面に裏面電極ペーストとアルミニウムペーストを印刷し、表面に表面電極ペーストを印刷して、乾燥させることと、
(12) ステップ(11)で得られたシリコンウェーハを高温で焼結し、裏面電極、アルミニウム裏面電界と表面電極を形成し、選択的パッシベーションコンタクト型結晶シリコン太陽電池の完成品を得ることと、を含む。
表面電極とシリコンウェーハの間にはトンネル層、ドープトポリシリコン層、および反射防止膜層が設けられ、結晶シリコン太陽電池は、上記の製造方法を利用して製造することができる。本開示はさらに、結晶シリコン太陽電池を提供し、それは、シリコンウェーハ、およびシリコンウェーハの表面に設けられた反射防止膜層と表面電極を含む。表面電極とシリコンウェーハの間にはトンネル層、ドープトポリシリコン層、および反射防止膜層が設けられる。シリコンウェーハの表面における表面電極がない領域では、反射防止膜層がシリコンウェーハと直接接触する。
Claims (9)
- (1) シリコンウェーハの表面にテクスチャリング面を形成することと、
(2) 前記シリコンウェーハの前記表面にトンネル層、およびドープトポリシリコン層を堆積させることと、
(3) 前記シリコンウェーハの前記表面に窒化シリコンまたは窒化ケイ素の膜層を堆積させることと、
(4) 前記シリコンウェーハの前記表面の非電極領域の前記トンネル層、前記ドープトポリシリコン層、および前記窒化シリコンまたは窒化ケイ素の膜層を除去することと、
(5) 前記シリコンウェーハの前記表面にテクスチャリング面を再形成することと、
(6) 前記シリコンウェーハの表面にリン拡散を施すことと、
(7) 前記シリコンウェーハの裏面と周辺のPN接合、および表面のホスホシリケートガラスを除去することと、
(8) 前記シリコンウェーハの前記裏面にパッシベーション膜を堆積させることと、
(9) 前記シリコンウェーハの前記表面に第2の反射防止膜層を堆積させることと、
(10) 前記シリコンウェーハの前記裏面にレーザー孔あけ加工を行うことと、
(11) 前記シリコンウェーハの前記裏面に裏面電極ペーストとアルミニウムペーストを印刷し、前記表面に表面電極ペーストを印刷して乾燥させることと、
(12) ステップ(11)で得られた前記シリコンウェーハを高温で焼結し、裏面電極、アルミニウム裏面電界と表面電極を形成することとを含む
ことを特徴とする結晶シリコン太陽電池の製造方法。 - 前記トンネル層はSiO2層であり、その厚さは0.5-8nmであり、前記ドープトポリシリコン層の厚さは5-250nmである
請求項1に記載の結晶シリコン太陽電池の製造方法。 - 前記トンネル層の厚さは0.5-3nmであり、前記ドープトポリシリコン層の厚さは50-150nmである
請求項2に記載の結晶シリコン太陽電池の製造方法。 - ステップ(2)が完了した後、前記シリコンウェーハのシート抵抗は40-160 Ω/sqである
請求項2に記載の結晶シリコン太陽電池の製造方法。 - ステップ(3)では、プラズマ化学気相成長法により、前記窒化シリコンまたは窒化ケイ素の膜層のうちの窒化ケイ素の膜層を堆積させ、その厚さは10-100nmである
請求項1に記載の結晶シリコン太陽電池の製造方法。 - 前記表面電極は、前記ドープトポリシリコン層、前記窒化シリコンまたは窒化ケイ素の膜層、および前記第2の反射防止膜層を介し前記トンネル層と積層する
請求項1に記載の結晶シリコン太陽電池の製造方法。 - 前記シリコンウェーハは、P型単結晶シリコンであり、前記ドープトポリシリコン層は、リンがドープされたN+型ポリシリコン層である
請求項1に記載の結晶シリコン太陽電池の製造方法。 - ステップ(5)では、NaOH、Na2SiO3とイソプロパノールの混合溶液を使用して前記シリコンウェーハの前記表面をエッチングし、テクスチャリング面を製造する
請求項1に記載の結晶シリコン太陽電池の製造方法。 - ステップ(4)では、レーザーを使用して実行する
請求項1に記載の結晶シリコン太陽電池の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023003453A JP2023040238A (ja) | 2018-09-17 | 2023-01-13 | 結晶シリコン太陽電池 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811081406.1A CN109256440A (zh) | 2018-09-17 | 2018-09-17 | 一种选择性钝化接触晶体硅太阳能电池及其制备方法 |
CN201811081406.1 | 2018-09-17 | ||
PCT/CN2019/098437 WO2020057263A1 (zh) | 2018-09-17 | 2019-07-30 | 一种晶体硅太阳能电池及其制备方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023003453A Division JP2023040238A (ja) | 2018-09-17 | 2023-01-13 | 結晶シリコン太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022501837A JP2022501837A (ja) | 2022-01-06 |
JP7212786B2 true JP7212786B2 (ja) | 2023-01-25 |
Family
ID=65048329
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021538877A Active JP7212786B2 (ja) | 2018-09-17 | 2019-07-30 | 結晶シリコン太陽電池およびその製造方法 |
JP2023003453A Pending JP2023040238A (ja) | 2018-09-17 | 2023-01-13 | 結晶シリコン太陽電池 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023003453A Pending JP2023040238A (ja) | 2018-09-17 | 2023-01-13 | 結晶シリコン太陽電池 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210202783A1 (ja) |
EP (1) | EP3855511A4 (ja) |
JP (2) | JP7212786B2 (ja) |
KR (1) | KR20210053333A (ja) |
CN (1) | CN109256440A (ja) |
WO (1) | WO2020057263A1 (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109256440A (zh) * | 2018-09-17 | 2019-01-22 | 浙江爱旭太阳能科技有限公司 | 一种选择性钝化接触晶体硅太阳能电池及其制备方法 |
CN109841693A (zh) * | 2019-02-25 | 2019-06-04 | 泰州隆基乐叶光伏科技有限公司 | 一种钝化接触结构及太阳能电池 |
CN110620159B (zh) * | 2019-03-20 | 2022-01-25 | 常州大学 | 一种P-TOPCon光伏太阳能电池结构的制备方法 |
CN109935659A (zh) * | 2019-03-21 | 2019-06-25 | 河海大学常州校区 | 一种p型太阳能电池的制备方法 |
CN110137270A (zh) * | 2019-04-17 | 2019-08-16 | 天津爱旭太阳能科技有限公司 | 一种选择性正面钝化perc太阳能电池的制备方法 |
CN110212037A (zh) * | 2019-04-17 | 2019-09-06 | 天津爱旭太阳能科技有限公司 | 选择性增强正面钝化的perc太阳能电池及其制备方法 |
CN109980022A (zh) * | 2019-04-24 | 2019-07-05 | 通威太阳能(成都)有限公司 | 一种p型隧穿氧化物钝化接触太阳能电池及其制备方法 |
CN110289319A (zh) * | 2019-05-14 | 2019-09-27 | 江苏顺风光电科技有限公司 | 结合隧穿氧化层的选择性发射极单晶perc电池的制备方法 |
CN110120434B (zh) * | 2019-06-18 | 2024-03-26 | 合肥晶澳太阳能科技有限公司 | 电池片及其制备方法 |
CN110416322A (zh) * | 2019-06-21 | 2019-11-05 | 天津爱旭太阳能科技有限公司 | 一种叠层钝化结构及其制备方法和太阳能电池 |
DE102019123785A1 (de) | 2019-09-05 | 2021-03-11 | Meyer Burger (Germany) Gmbh | Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben |
CN110581198A (zh) * | 2019-09-05 | 2019-12-17 | 东方日升(常州)新能源有限公司 | 一种局域接触钝化太阳电池及其制备方法 |
CN110634996A (zh) * | 2019-09-27 | 2019-12-31 | 浙江晶科能源有限公司 | 一种钝化结构的制作方法、钝化结构和光伏电池 |
CN111463317A (zh) * | 2020-04-08 | 2020-07-28 | 浙江正泰太阳能科技有限公司 | 一种p型钝化接触太阳能电池及其制备方法 |
CN111640823B (zh) * | 2020-06-11 | 2022-05-17 | 常州时创能源股份有限公司 | 一种n型钝化接触电池及其制备方法 |
CN113035977A (zh) * | 2021-04-28 | 2021-06-25 | 广东爱旭科技有限公司 | 防烧穿pn结的perc电池、电池组件和光伏系统 |
CN113471305B (zh) * | 2021-07-01 | 2023-05-26 | 同翎新能源(扬州)有限公司 | 一种选择性钝化接触结构电池及其制备方法 |
CN113284961B (zh) * | 2021-07-22 | 2021-09-28 | 浙江爱旭太阳能科技有限公司 | 一种太阳能电池及其钝化接触结构、电池组件及光伏系统 |
CN113594295B (zh) * | 2021-07-23 | 2024-03-08 | 深圳黑晶光电技术有限公司 | 一种双面钝化结构的太阳能电池制备方法 |
CN113851555A (zh) * | 2021-08-20 | 2021-12-28 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | 一种N型TOPCon太阳能电池及其制作方法 |
CN113629162A (zh) * | 2021-08-31 | 2021-11-09 | 晶澳(扬州)太阳能科技有限公司 | 硅基太阳能电池单元及其制造方法 |
CN114464687B (zh) * | 2021-12-28 | 2024-05-10 | 浙江爱旭太阳能科技有限公司 | 一种局部双面隧穿钝化接触结构电池及其制备方法 |
CN114864740A (zh) * | 2022-04-11 | 2022-08-05 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | 一种双面局域钝化接触太阳能电池及其制作方法 |
CN115020533A (zh) * | 2022-04-30 | 2022-09-06 | 常州时创能源股份有限公司 | 一种polo-ibc电池的制备方法 |
CN115036396B (zh) * | 2022-07-14 | 2023-06-13 | 泰州中来光电科技有限公司 | 一种硼掺杂发射极的制备方法 |
CN115513306A (zh) * | 2022-08-19 | 2022-12-23 | 隆基绿能科技股份有限公司 | 太阳能电池及其制备和光伏组件 |
CN115513339A (zh) * | 2022-08-19 | 2022-12-23 | 隆基绿能科技股份有限公司 | 太阳能电池及其制备和光伏组件 |
CN115483313A (zh) * | 2022-09-20 | 2022-12-16 | 滁州捷泰新能源科技有限公司 | 电池及其制备方法 |
CN117239012A (zh) * | 2023-11-15 | 2023-12-15 | 拉普拉斯新能源科技股份有限公司 | 一种太阳能电池及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013136422A1 (ja) | 2012-03-12 | 2013-09-19 | 三菱電機株式会社 | 太陽電池セルの製造方法 |
JP2014204128A (ja) | 2013-04-03 | 2014-10-27 | エルジー エレクトロニクス インコーポレイティド | 太陽電池 |
JP2017037974A (ja) | 2015-08-11 | 2017-02-16 | 信越化学工業株式会社 | 太陽電池の製造方法及び太陽電池 |
KR101740523B1 (ko) | 2015-12-21 | 2017-05-26 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN106784128A (zh) | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 前发射结背面隧道氧化钝化接触高效电池的制作方法 |
CN106972079A (zh) | 2017-03-03 | 2017-07-21 | 浙江爱旭太阳能科技有限公司 | Perc太阳能电池硅片背面的清洗方法 |
US20180261703A1 (en) | 2015-09-18 | 2018-09-13 | Hanwha Q Cells Gmbh | Solar cell and solar cell manufacturing method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008055028A1 (de) * | 2008-12-19 | 2010-07-01 | Q-Cells Se | Solarzelle |
KR101788163B1 (ko) * | 2016-02-12 | 2017-11-15 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
CN107464855A (zh) * | 2016-06-02 | 2017-12-12 | 上海神舟新能源发展有限公司 | 硅基太阳能电池n型表面隧穿氧化钝化接触制作方法 |
CN107068790A (zh) * | 2017-03-03 | 2017-08-18 | 广东爱康太阳能科技有限公司 | P型perc太阳能电池的制备方法、电池、组件和系统 |
CN108054219A (zh) * | 2017-12-15 | 2018-05-18 | 浙江晶科能源有限公司 | 一种p型太阳能电池及其制作方法 |
CN109256440A (zh) * | 2018-09-17 | 2019-01-22 | 浙江爱旭太阳能科技有限公司 | 一种选择性钝化接触晶体硅太阳能电池及其制备方法 |
CN209104161U (zh) * | 2018-09-17 | 2019-07-12 | 浙江爱旭太阳能科技有限公司 | 一种选择性钝化接触太阳能电池 |
-
2018
- 2018-09-17 CN CN201811081406.1A patent/CN109256440A/zh active Pending
-
2019
- 2019-07-30 KR KR1020217010380A patent/KR20210053333A/ko not_active Application Discontinuation
- 2019-07-30 EP EP19862734.1A patent/EP3855511A4/en not_active Withdrawn
- 2019-07-30 WO PCT/CN2019/098437 patent/WO2020057263A1/zh unknown
- 2019-07-30 JP JP2021538877A patent/JP7212786B2/ja active Active
-
2021
- 2021-03-17 US US17/203,788 patent/US20210202783A1/en not_active Abandoned
-
2023
- 2023-01-13 JP JP2023003453A patent/JP2023040238A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013136422A1 (ja) | 2012-03-12 | 2013-09-19 | 三菱電機株式会社 | 太陽電池セルの製造方法 |
JP2014204128A (ja) | 2013-04-03 | 2014-10-27 | エルジー エレクトロニクス インコーポレイティド | 太陽電池 |
JP2017037974A (ja) | 2015-08-11 | 2017-02-16 | 信越化学工業株式会社 | 太陽電池の製造方法及び太陽電池 |
US20180261703A1 (en) | 2015-09-18 | 2018-09-13 | Hanwha Q Cells Gmbh | Solar cell and solar cell manufacturing method |
CN106784128A (zh) | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | 前发射结背面隧道氧化钝化接触高效电池的制作方法 |
KR101740523B1 (ko) | 2015-12-21 | 2017-05-26 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN106972079A (zh) | 2017-03-03 | 2017-07-21 | 浙江爱旭太阳能科技有限公司 | Perc太阳能电池硅片背面的清洗方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3855511A4 (en) | 2021-11-24 |
JP2023040238A (ja) | 2023-03-22 |
KR20210053333A (ko) | 2021-05-11 |
CN109256440A (zh) | 2019-01-22 |
EP3855511A1 (en) | 2021-07-28 |
WO2020057263A1 (zh) | 2020-03-26 |
JP2022501837A (ja) | 2022-01-06 |
US20210202783A1 (en) | 2021-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7212786B2 (ja) | 結晶シリコン太陽電池およびその製造方法 | |
KR102101408B1 (ko) | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 | |
CN110828583B (zh) | 正面局域钝化接触的晶硅太阳电池及其制备方法 | |
AU2023201491A1 (en) | Mask-layer-free hybrid passivation back contact cell and fabrication method thereof | |
CN110838536A (zh) | 具有多种隧道结结构的背接触太阳能电池及其制备方法 | |
CN111668345A (zh) | 一种太阳能电池及其制备方法 | |
JP5174635B2 (ja) | 太陽電池素子 | |
CN113809205B (zh) | 太阳能电池的制备方法 | |
CN112635592A (zh) | 一种太阳能电池及其制作方法 | |
CN111739982A (zh) | 一种选择性发射极的制备方法和太阳能电池 | |
CN111599895A (zh) | 一种晶硅太阳能钝化接触电池的制备方法 | |
CN115458612A (zh) | 一种太阳电池及其制备方法 | |
CN115188837A (zh) | 一种背接触太阳能电池及制备方法、电池组件 | |
CN112133793A (zh) | 一种背结背接触太阳能电池及其制作方法 | |
WO2012162905A1 (zh) | 背接触晶体硅太阳能电池片制造方法 | |
CN115020538A (zh) | 一种p型ibc单晶太阳能电池及其制备方法 | |
JP6426486B2 (ja) | 太陽電池素子の製造方法 | |
TWM517422U (zh) | 具有局部鈍化的異質接面太陽能電池結構 | |
WO2012162901A1 (zh) | 背接触晶体硅太阳能电池片制造方法 | |
CN115692516A (zh) | 一种新型topcon电池及其制作方法 | |
CN116110996A (zh) | 太阳能电池及其制备方法 | |
CN115312623A (zh) | 一种钙钛矿晶硅叠层太阳能电池的制备方法 | |
CN110634999A (zh) | 太阳能电池及其制作方法 | |
CN113471304A (zh) | 一种局域钝化接触结构电池及其制备方法 | |
CN113594295A (zh) | 一种双面钝化结构的太阳能电池制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220509 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220712 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220920 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230104 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230113 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7212786 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |