CN108538952A - 晶体硅高效太阳能电池结构及其制作方法 - Google Patents
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 15
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- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 32
- 239000012528 membrane Substances 0.000 claims abstract description 22
- 229910017107 AlOx Inorganic materials 0.000 claims abstract description 15
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- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Abstract
本发明公开了一种晶体硅高效太阳能电池结构,其特征在于pn结在电池背面,P型硅片的正面非接触区域为AlOx/SiNx叠层膜结构,P型硅片的正面电极的接触区域为SiOx/p‑poly Si介质层;P型硅片的背面PN结外设置SiOx/n‑poly Si/SiNx叠层膜结构。该结构电池可同时适用于P型单晶和P型多晶,在表面钝化和金属接触区钝化方面起到很好的作用,从而提升太阳能电池的光电转换效率。
Description
技术领域
本发明设计一种新型的P型高效太阳能电池结构,用于降低电池表面复合速率和金属接触区复合,提高电池的光电转换效率。
背景技术
太阳能转换效率受到光吸收利用、载流子输运、载流子收集等一系列因素的限制,其中对于晶体硅电池而言,其转换效率的理论最高值是28%。限制太阳能电池转换效率的原因主要来源于光学损失、电学损失、复合损失等。光学损失包括前表面的反射损失、正面电极的遮光损失以及长波段的非吸收透射损失。电学损失,包括硅片体电阻、扩散层横向电阻、金属电极电阻、以及金属和硅片的接触电阻等的损失。复合损失,包括体复合、正背面表面复合和正背面金属接触区复合。
目前P型PERC太阳能电池采用背面钝化和局部接触,从而大幅度降低背表面复合,有利于提高晶硅电池的长波响应,从而提升电池光电转化效率。如图1所示,电池片正面采用扩散方式形成pn结,并利用选择性发射极技术,在电极区域重掺杂以形成良好的欧姆接触,同时非接触区域轻掺杂,有利于降低表面复合速率。为了进一步降低电池前表面的复合,在电池的表面采用热生长或湿化学生长的方式形成一层致密的SiOx,产生良好的表面钝化效果。电池背面则采用AlOx/SiNx或SiOx/SiNx叠层膜,利用场钝化和背面反射器作用,降低背表面复合,提高电池片的长波响应。局部接触区域采用激光开膜方式,使背场铝浆直接覆盖在背面钝化膜上与硅基体形成局部接触。根据PERC电池的结构特点,可以大幅降低背表面复合,提高电池转换效率。
发明内容
本发明针对现有技术中存在的问题,提出了晶体硅高效太阳能电池结构及其制作方法。
技术方案:
本发明公开了一种晶体硅高效太阳能电池结构,pn结在电池背面,P型硅片的正面非接触区域为AlOx/SiNx叠层膜结构,P型硅片的正面电极的接触区域为SiOx/p-poly Si介质层;P型硅片的背面PN结外设置SiOx/n-poly Si/SiNx叠层膜结构。
具体的,所述AlOx/SiNx叠层膜中:AlOx的厚度为3-30nm,SiNx的厚度为60-150nm。
具体的,所述SiOx/p-poly Si介质层中:SiOx小于5nm,p-poly Si的厚度为20-200nm。
具体的,所述SiOx/n-poly Si/SiNx叠层膜中:SiOx小于5nm,n-poly Si的厚度为20-200nm,SiNx的厚度为70-200nm。
本发明还公开了一种晶体硅高效太阳能电池结构制作方法,P型硅片的正面非接触区域采用PECVD或ALD的方法生长出AlOx/SiNx叠层膜;P型硅片的正面电极的接触区域形成SiOx/p-poly Si介质层,其中:SiOx采用热生长或湿化学生长方法形成,p-poly Si采用LPCVD或PECVD的方法形成;在P型硅片的背面PN结外生成SiOx/n-poly Si/SiNx叠层膜,其中:SiOx采用热生长或湿化学生长方法形成,n-poly Si采用LPCVD或PECVD的方法形成,SiNx采用PECVD的方法形成。
本发明的有益效果
基于本发明提供方法制得的太阳能电池结构,特点是:
①pn结在电池背面,避免n-poly Si对正面光吸收作用;
②正面AlOx/SiNx叠层膜钝化非接触区域,SiOx/p-poly Si介质层钝化接触区域;正面非接触区域采用AlOx/SiNx叠层膜钝化,可有效降低非接触区域的表面复合;接触区域采用SiOx/p-poly Si介质层钝化,一方面可以降低接触区域的复合,另一方面可避免SiOx和多晶硅对入射光线的吸收;
③背面采用SiOx/n-poly Si/SiNx叠层膜进行背表面钝化,在进行表面钝化的同时,可有效降低接触区域的复合;
该结构电池可同时适用于P型单晶和P型多晶,在表面钝化和金属接触区钝化方面起到很好的作用,从而提升太阳能电池的光电转换效率。
附图说明
图1为现有技术中P型PERC太阳能电池结构示意图
图2为本发明晶体硅高效太阳能电池结构示意图
具体实施方式
下面结合实施例对本发明作进一步说明,但本发明的保护范围不限于此:
实施例1:一种晶体硅高效太阳能电池结构,结合图2,pn结在电池背面,优选的实施例中,通过热扩散的方法获得。P型硅片的正面非接触区域为AlOx/SiNx叠层膜1结构,利用AlOx负电荷效应及良好的钝化效果,可有效降低正面非接触区域载流子复合。优选的实施例中,采用PECVD或ALD的方法获得。P型硅片的正面电极4的接触区域为SiOx/p-poly Si介质层2,利用载流子选择性接触,既降低了少数载流子的复合又可以满足多数载流子的导通,达到降低金属接触复合和满足欧姆接触的双重目的;其中:SiOx采用热生长或湿化学生长方法形成,p-poly Si采用LPCVD或PECVD的方法形成。P型硅片的背面PN结外设置SiOx/n-poly Si/SiNx叠层膜3结构,一方面,界面化学钝化叠加能带弯曲引入的场钝化,极大的降低了背表面及金属接触区少数载流子的复合,另一方面,多数载流子可以隧穿SiOx层,不影响多数载流子的传导;其中:SiOx采用热生长或湿化学生长方法形成,n-poly Si采用LPCVD或PECVD的方法形成,SiNx采用PECVD的方法形成。所述PECVD、ALD、LPCVD、热生长或湿化学生长方法均为现有技术,此处不再赘述,本发明旨在保护晶体硅高效太阳能电池结构以及通过何种方法实现该结构。
实施例2:如实施例1所述的晶体硅高效太阳能电池结构,所述AlOx/SiNx叠层膜1中:AlOx的厚度为3-30nm,SiNx的厚度为60-150nm。
实施例3:如实施例1所述的太阳能电池结构,所述SiOx/p-poly Si介质层2中:SiOx小于5nm,p-poly Si的厚度为20-200nm。
实施例4:如实施例1所述的晶体硅高效太阳能电池结构,所述SiOx/n-poly Si/SiNx叠层膜3中:SiOx小于5nm,n-poly Si的厚度为20-200nm,SiNx的厚度为70-200nm。
三种叠层膜的复合作用,互相影响使得该结构电池可同时适用于P型单晶和P型多晶,在表面钝化和金属接触区钝化方面起到很好的作用,从而提升太阳能电池的光电转换效率。
本文中所描述的具体实施例仅仅是对本发明精神做举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代,但并不会偏离本发明的精神或者超越所附权利要求书所定义的范围。
Claims (5)
1.一种晶体硅高效太阳能电池结构,其特征在于pn结在电池背面,P型硅片的正面非接触区域为AlOx/SiNx叠层膜结构,P型硅片的正面电极的接触区域为SiOx/p-poly Si介质层;P型硅片的背面PN结外设置SiOx/n-poly Si/SiNx叠层膜结构。
2.根据权利要求1所述的晶体硅高效太阳能电池结构,其特征在于所述AlOx/SiNx叠层膜中:AlOx的厚度为3-30nm,SiNx的厚度为60-150nm。
3.根据权利要求1所述的太阳能电池结构,其特征在于所述SiOx/p-poly Si介质层中:SiOx小于5nm,p-poly Si的厚度为20-200nm。
4.根据权利要求1所述的晶体硅高效太阳能电池结构,其特征在于所述SiOx/n-polySi/SiNx叠层膜中:SiOx小于5nm,n-poly Si的厚度为20-200nm,SiNx的厚度为70-200nm。
5.一种晶体硅高效太阳能电池结构制作方法,其特征在于在P型硅片的正面非接触区域采用PECVD或ALD的方法生长出AlOx/SiNx叠层膜;P型硅片的正面电极的接触区域形成SiOx/p-poly Si介质层,其中:SiOx采用热生长或湿化学生长方法形成,p-poly Si采用LPCVD或PECVD的方法形成;在P型硅片的背面PN结外生成SiOx/n-poly Si/SiNx叠层膜,其中:SiOx采用热生长或湿化学生长方法形成,n-poly Si采用LPCVD或PECVD的方法形成,SiNx采用PECVD的方法形成。
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