WO2016078365A1 - 高效n型双面太阳电池 - Google Patents

高效n型双面太阳电池 Download PDF

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WO2016078365A1
WO2016078365A1 PCT/CN2015/078931 CN2015078931W WO2016078365A1 WO 2016078365 A1 WO2016078365 A1 WO 2016078365A1 CN 2015078931 W CN2015078931 W CN 2015078931W WO 2016078365 A1 WO2016078365 A1 WO 2016078365A1
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type
passivation layer
solar cell
efficiency
sided solar
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PCT/CN2015/078931
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English (en)
French (fr)
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郑飞
张忠卫
石磊
阮忠立
陶智华
赵钰雪
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上海神舟新能源发展有限公司
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Priority to US14/912,861 priority Critical patent/US20160351741A1/en
Priority to AU2015323849A priority patent/AU2015323849A1/en
Priority to EP15849815.4A priority patent/EP3190629A4/en
Priority to JP2017545995A priority patent/JP2017535975A/ja
Publication of WO2016078365A1 publication Critical patent/WO2016078365A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention relates to the technical field of solar cell manufacturing, in particular to a high-efficiency N-type double-sided solar cell.
  • N-type batteries made of N-type silicon wafers have attracted more and more attention in recent years, and are also used to make N-type solar cells.
  • the N-type silicon wafer refers to the incorporation of phosphorus into the silicon wafer. Since the N-type silicon wafer has a long minority carrier lifetime, the battery can be made to have higher photoelectric conversion efficiency. In addition, N-type batteries are more tolerant to metal contamination, have better endurance performance, and have high stability.
  • N-type silicon wafer is doped with phosphorus, and there is no boron-oxygen pair, and the battery has no photo-induced attenuation caused by the boron-oxygen pair. Because of these advantages of N-type crystalline silicon, N-type silicon wafers are very suitable for making efficient solar cells. However, it is not easy to achieve large-scale production of N-type high-efficiency batteries.
  • N-type solar cell In order to obtain an efficient N-type solar cell, the process is much more complicated than the P-type solar cell, and the technical requirements are more demanding.
  • Matsushita Co., Ltd. formerly Sanyo, which has been acquired by Panasonic
  • SunPower Corporation of the United States have used N-type materials to produce high-efficiency solar cells and components.
  • SunPower Corporation of the United States is manufacturing full-back contact batteries (also referred to as back contact, IBC)
  • HIT heterogeneous junctions with thin intrinsic layers
  • the existing N-type single crystal silicon high-efficiency battery has the characteristics of simple structure, double-sided power generation capability, and high photoelectric conversion efficiency, in order to obtain better back field passivation effect, selective emitter technology is required. Improve the surface passivation performance of silicon wafers.
  • the basic principle and structure are the same as that of selective emitters.
  • Corrosion paste technology is widely used to prepare selective back field, or in order to obtain better filling factor, in order to obtain higher conversion efficiency.
  • the boron paste is printed on the front side to obtain a selective emitter. Whether it is the front or the back, there are printing alignment problems in the double-sided battery, and the requirements for production and process personnel are relatively high. Moreover, the process of cleaning the corrosive slurry consumes a large amount of water and also produces a large amount of harmful and toxic pollutants.
  • Chinese patent CN203103335U discloses a double-sided light-receiving solar cell, which uses a P-type silicon wafer as a silicon substrate as a base region of a solar cell, and the front surface of the silicon substrate is provided with an emitter, a front passivation and a reduction from the inside to the outside.
  • the reflective layer and the front electrode, the back surface of the silicon substrate is provided with a boron back field, a back passivation and an anti-reflection layer and a back electrode.
  • the patent is a P-type doped battery. Compared with the N-type doped battery, the doping type is different, resulting in a completely different process and composition of the front surface emitter, the front electrode and the back field, the back passivation, and the back electrode. The battery conversion efficiency obtained is also different.
  • An object of the present invention is to provide a highly efficient N-type double-sided solar cell capable of ensuring a better battery open circuit voltage in order to overcome the drawbacks of the prior art described above.
  • the object of the present invention can be achieved by the following technical solutions.
  • the present invention provides a high efficiency N-type double-sided solar cell, comprising:
  • first silicon nitride anti-reflection film formed on the first silicon oxide oxide layer and a second silicon nitride anti-reflection film formed on the second silicon oxide oxide layer;
  • a first metal electrode formed on a front surface of the N-type battery substrate and a second metal electrode formed on a back surface of the N-type battery substrate.
  • the high-efficiency N-type double-sided solar cell of the invention after printing the metal electrode, collects the carriers generated by the light incident on the back surface of the solar cell under the action of the phosphorus back field, thereby realizing the double-sided photoelectric conversion effect, thereby greatly increasing
  • the amount of power generated also breaks the limitation of the photoelectric conversion efficiency of the battery caused by the single-sided receiving of the single-sided battery.
  • the back of the solar cell is heavily doped with phosphorus, which can make the battery without warping and can process a thinner silicon substrate.
  • Simultaneous polishing of the passivation layer and the N+ passivation layer has the effect of increasing the open circuit voltage of the battery, thereby further improving the conversion efficiency of the battery.
  • the present invention has better low light response and high temperature characteristics, and emits more power in the morning and evening.
  • a further improvement of the high efficiency N-type double-sided solar cell of the present invention is that the N-type battery base
  • the body is a phosphorus doped N-type silicon wafer.
  • the N-type battery substrate uses an N-type silicon wafer, which has a longer minority carrier lifetime than the prior art P-type solar cell.
  • a further improvement of the high efficiency N-type double-sided solar cell of the present invention is that the square resistance of the P-type doped region is 30 ⁇ / ⁇ to 130 ⁇ / ⁇ .
  • a further improvement of the high efficiency N-type double-sided solar cell of the present invention is that the polishing passivation layer has a reflectance greater than 15%.
  • a further improvement of the high-efficiency N-type double-sided solar cell of the present invention is that the N+ passivation layer has a square resistance of 20 ⁇ / ⁇ to 90 ⁇ / ⁇ and a thickness of 0.3 ⁇ m to 0.8 ⁇ m.
  • a further improvement of the high-efficiency N-type double-sided solar cell of the present invention is that the first silicon nitride anti-reflection film has a thickness of 50 nm to 100 nm and a refractive index of 2.0 to 2.3.
  • a further improvement of the high-efficiency N-type double-sided solar cell of the present invention is that the second silicon nitride anti-reflection film has a thickness of 50 nm to 110 nm and a refractive index of 1.9 to 2.2.
  • a further improvement of the high-efficiency N-type double-sided solar cell of the present invention is that the first metal electrode and the second metal electrode are both composed of a main gate electrode and a sub-gate electrode, wherein the number of the main gate electrodes is 0 to Five, the number of the secondary gate electrodes is 70 to 110.
  • FIG. 1 is a schematic view showing the structure of a high efficiency N-type double-sided solar cell of the present invention.
  • 1-first metal electrode 2-first silicon nitride anti-reflection film, 3-first silicon oxide oxide layer, 4-P type doped region, 5-N type battery substrate, 6-N+ blunt The layer, the 7-polished passivation layer, the 8-second silicon oxide layer, the 9-second silicon nitride anti-reflection film, and the 10-second metal electrode.
  • FIG. 1 is a schematic structural view of a high efficiency N-type double-sided solar cell of the present invention.
  • the high efficiency N-type double-sided solar cell of the present invention comprises:
  • polishing passivation layer 7 formed on the back surface of the N-type battery substrate 5;
  • first silicon oxide layer 3 formed on the P-type doped region 4 and a second silicon oxide layer 8 formed on the N + passivation layer 6;
  • first silicon nitride anti-reflection film 2 formed on the first silicon oxide layer 3 and a second silicon nitride anti-reflection film 9 formed on the second silicon oxide layer 8;
  • the first metal electrode 1 formed on the front surface of the N-type battery base 5 and the second metal electrode 10 formed on the back surface of the N-type battery base 5 are formed.
  • the N-type battery substrate 5 is selectively etched to have a textured surface.
  • the N-type battery substrate 5 employs a phosphorus-doped N-type silicon wafer having a longer minority carrier lifetime than prior art P-type solar cells.
  • the P-type doped region 4 is formed on the front surface of the N-type battery substrate 5 by thermal diffusion or ion implantation, and has a square resistance of 30 ⁇ / ⁇ to 130 ⁇ / ⁇ .
  • the polishing passivation layer 7 is formed on the back surface of the N-type battery substrate 5 by wet etching, and the N+ passivation layer is formed in the polishing passivation layer 7 adjacent to the top of the N-type battery substrate 5 by an ion implantation process (for example, a phosphorus doping process). 6.
  • the polish passivation layer 7 and the N+ passivation layer 6 constitute an N-type heavily doped region.
  • the polishing passivation layer 7 has a reflectance of more than 15%
  • the N+ passivation layer 6 has a square resistance of 20 ⁇ / ⁇ to 90 ⁇ / ⁇
  • the N+ passivation layer 6 has a thickness of 0.3 ⁇ m to 0.8 ⁇ m.
  • the first silicon oxide oxide layer 3 and the second silicon oxide oxide layer 8 are respectively formed on the P-doped region 4 and the N+ passivation layer 6 of the N-type heavily doped region by thermal oxidation, and the first silicon oxide is oxidized.
  • the main components of layer 3 and second silicon oxide layer 8 are both silicon dioxide.
  • a first silicon nitride anti-reflection film 2 and a second silicon nitride anti-reflection film 9 are deposited on the first silicon oxide layer 3 and the second silicon oxide layer 8, respectively.
  • the first silicon nitride anti-reflection film 2 has a thickness of 50 nm to 100 nm, a refractive index of 2.0 to 2.3
  • the second silicon nitride anti-reflection film 9 has a thickness of 50 nm to 110 nm and a refractive index of 1.9 to 2.2.
  • the front surface and the back surface of the N-type battery substrate 5 are respectively printed with a first metal electrode 1 and a second metal electrode 10, and the first metal electrode 1 and the second metal electrode 10 are each composed of a main gate electrode and a sub-gate electrode, wherein the main The number of gate electrodes is 0 to 5, and the number of the sub-gate electrodes is 70 to 110.
  • the number of main gate electrodes of the first metal electrode 1 is set to two
  • the number of main gate electrodes of the second metal electrode 10 is also set to two.
  • the high-efficiency N-type double-sided solar cell of the invention after printing the metal electrode, collects the carriers generated by the light incident on the back surface of the solar cell under the action of the phosphorus back field, thereby realizing the double-sided photoelectric conversion effect, thereby greatly increasing The amount of power generated also broke the single-sided battery and received light on one side. Conversion efficiency limitations. And the back of the solar cell is heavily doped with phosphorus, which can make the battery without warping and can process a thinner silicon substrate. Simultaneous polishing of the passivation layer and the N+ passivation layer has the effect of increasing the open circuit voltage of the battery, thereby further improving the conversion efficiency of the battery. Compared with the existing P-type double-sided battery, the present invention has better low light response and high temperature characteristics, and emits more power in the morning and evening.

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Abstract

本发明公开了一种高效N型双面太阳电池，包括：具有织构化表面的N型电池基体；形成于N型电池基体正面的P型掺杂区；于N型电池基体背面刻蚀形成的抛光钝化层；于抛光钝化层中临近所述N型电池基体的顶部经磷掺杂工艺形成的N+钝化层；形成于P型掺杂区上的第一二氧化硅氧化层和形成于N+钝化层上的第二二氧化硅氧化层；形成于第一二氧化硅氧化层上的第一氮化硅减反膜和形成于第二二氧化硅氧化层上的第二氮化硅减反膜；形成于N型电池基体正面的第一金属电极和形成于N型电池基体背面的第二金属电极。本发明利用抛光钝化层及N+钝化层获得更高的开路电压，双面印刷使电池接受太阳光照射时双面收集太阳光，增加整体发电量，提高电池的光电转换效率。

Description

高效N型双面太阳电池 技术领域
本发明涉及太阳电池制造技术领域，尤其是指一种高效N型双面太阳电池。
背景技术
目前市场上大部分晶硅太阳电池使用的都是P型硅片，即在硅片中掺入硼的硅片。但近些年N型硅片制作的N型电池越来越受到关注，也被用于制作N型太阳电池。N型硅片是指硅片中掺入磷，由于N型硅片具有较长的少数载流子寿命，因此做成电池可以获得更高的光电转换效率。另外，N型电池对金属污染的容忍度更强，具有更好的忍耐性能，稳定性强。N型硅片掺入磷，没有硼-氧对，电池无硼-氧对引起的光致衰减现象。就因为N型晶体硅的这些优点，使得N型硅片非常适合制作高效的太阳电池。但实际要实现N型高效电池的规模化生产并非易事。
想获得高效的N型太阳电池，其工艺流程相对P型太阳电池要复杂很多，技术要求也更苛刻。如日本松下公司(原Sanyo，目前已被松下收购)与美国SunPower公司已用N型材料生产高效太阳能电池及组件。美国SunPower公司正在制造全背接触电池(又指背接触，IBC)，日本松下公司则正在制造所谓的HIT(具有薄本征层的异质结)电池。上述两种电池结构除了电池加工复杂外，还要求质量非常高的硅材料和表面钝化，而且IBC电池要求背面上金属触点的高对准精度。尽管目前国内已有的N型单晶硅高效电池，具有结构简单、双面发电能力、光电转换效率较高等特点，但为了获得更好的背场钝化效果，需要通过选择性发射极技术来提高硅片表面钝化性能，其基本原理和结构与选择性发射极一样，广泛使用腐蚀浆料技术来制备选择性背场，又或者为了获得更好的填充因子，以期获得更高的转化效率，在正面印刷硼浆来获得选择性发射极。无论是正面还是背面，做双面电池都存在印刷对位问题，对生产及工艺人员的要求比较高。而且，清洗腐蚀浆料的过程，会消耗大量的水，也会产生大量有害有毒的污染物。
中国专利CN203103335U公开了一种双面受光太阳电池，采用P型硅片为硅衬底作为太阳电池的基区，硅衬底的前表面由内至外依次设有发射极、前钝化及减反射层和前电极，硅衬底的背表面设有硼背场、背钝化及减反射层和背电极。该专利为P型掺杂电池，与N型掺杂电池相比，掺杂类型不同，导致前表面发射极、前电极和背场、背钝化、背电极所采用的工艺及成分完全不同，所获得的电池转化效率也不同。
发明内容
本发明的目的就是为了克服上述现有技术存在的缺陷而提供一种能够确保获得更好的电池开路电压的高效N型双面太阳电池。
本发明的目的可以通过以下技术方案来实现，本发明提供了一种高效N型双面太阳电池，包括：
具有织构化表面的N型电池基体；
形成于所述N型电池基体正面的P型掺杂区；
于所述N型电池基体背面刻蚀形成的抛光钝化层；
于所述抛光钝化层中临近所述N型电池基体的顶部经磷掺杂工艺形成的N+钝化层；
形成于所述P型掺杂区上的第一二氧化硅氧化层和形成于所述N+钝化层上的第二二氧化硅氧化层；
形成于所述第一二氧化硅氧化层上的第一氮化硅减反膜和形成于所述第二二氧化硅氧化层上的第二氮化硅减反膜；以及
形成于所述N型电池基体正面的第一金属电极和形成于所述N型电池基体背面的第二金属电极。
本发明的高效N型双面太阳电池，印刷金属电极后，在磷背场的作用下，将入射到太阳电池背面的光产生的载流子收集，实现了双面光电转化效应，从而大幅增加发电量，也打破了单面电池单面受光而导致电池光电转换效率的限制。并且太阳电池背面使用磷重掺杂，可以使电池无翘曲，能够加工更薄的硅衬底。同时抛光钝化层和N+钝化层，具有提高电池开路电压的作用，从而进一步提高电池的转换效率。与现有P型双面电池相比，本发明具有更好的弱光响应和高温特性，在早晨和傍晚发出更多的电量。
本发明高效N型双面太阳电池的进一步改进在于，所述N型电池基 体为磷掺杂的N型硅片。N型电池基体采用N型硅片，与现有技术的P型太阳电池相比，具有更长的少数载流子寿命。
本发明高效N型双面太阳电池的进一步改进在于，所述P型掺杂区的方阻为30Ω/□～130Ω/□。
本发明高效N型双面太阳电池的进一步改进在于，所述抛光钝化层的反射率大于15％。
本发明高效N型双面太阳电池的进一步改进在于，所述N+钝化层的方阻为20Ω/□～90Ω/□，厚度为0.3μm～0.8μm。
本发明高效N型双面太阳电池的进一步改进在于，所述第一氮化硅减反膜的厚度为50nm～100nm，折射率为2.0～2.3。
本发明高效N型双面太阳电池的进一步改进在于，所述第二氮化硅减反膜的厚度为50nm～110nm，折射率为1.9～2.2。
本发明高效N型双面太阳电池的进一步改进在于，所述第一金属电极和所述第二金属电极均由主栅电极和副栅电极组成，其中所述主栅电极的根数为0～5根，所述副栅电极的根数为70～110根。
附图说明
图1是本发明高效N型双面太阳电池的结构示意图。
图中，1-第一金属电极、2-第一氮化硅减反膜、3-第一二氧化硅氧化层、4-P型掺杂区、5-N型电池基体、6-N+钝化层、7-抛光钝化层、8-第二二氧化硅氧化层、9-第二氮化硅减反膜、10-第二金属电极。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
配合参看图1所示，图1是本发明高效N型双面太阳电池的结构示意图。如图1所示，本发明的高效N型双面太阳电池，包括：
具有织构化表面的N型电池基体5；
形成于N型电池基体5正面的P型掺杂区4；
于N型电池基体5背面刻蚀形成的抛光钝化层7；
于抛光钝化层7中临近N型电池基体5的顶部经磷掺杂工艺形成的 N+钝化层6；
形成于P型掺杂区4上的第一二氧化硅氧化层3和形成于N+钝化层6上的第二二氧化硅氧化层8；
形成于第一二氧化硅氧化层3上的第一氮化硅减反膜2和形成于第二二氧化硅氧化层8上的第二氮化硅减反膜9；以及
形成于N型电池基体5正面的第一金属电极1和形成于N型电池基体5背面的第二金属电极10。
具体地，N型电池基体5经选择性腐蚀，而具有织构化表面。优选地，N型电池基体5采用磷掺杂的N型硅片，与现有技术的P型太阳电池相比，具有更长的少数载流子寿命。
P型掺杂区4，经热扩散或离子注入形成于N型电池基体5的正面，方阻为30Ω/□～130Ω/□。
抛光钝化层7经湿法刻蚀形成于N型电池基体5的背面，抛光钝化层7中临近N型电池基体5的顶部经离子注入工艺(例如磷掺杂工艺)形成N+钝化层6，抛光钝化层7和N+钝化层6构成了N型重掺区。优选地，抛光钝化层7的反射率大于15％，N+钝化层6的方阻为20Ω/□～90Ω/□，N+钝化层6的厚度为0.3μm～0.8μm。
第一二氧化硅氧化层3和第二二氧化硅氧化层8经过热氧化分别形成于P型掺杂区4上和N型重掺区的N+钝化层6上，第一二氧化硅氧化层3和第二二氧化硅氧化层8的主要成分均为二氧化硅。第一二氧化硅氧化层3和第二二氧化硅氧化层8上又分别沉积有第一氮化硅减反膜2和第二氮化硅减反膜9。优选地，第一氮化硅减反膜2的厚度为50nm～100nm，折射率2.0～2.3，第二氮化硅减反膜9的厚度为50nm～110nm，折射率为1.9～2.2。
N型电池基体5的正面及背面分别印刷有第一金属电极1和第二金属电极10，第一金属电极1和第二金属电极10均由主栅电极和副栅电极组成，其中所述主栅电极的根数为0～5根，所述副栅电极的根数为70～110根。在图中所示的实施例中，第一金属电极1的主栅电极的数量设定为两根，第二金属电极10的主栅电极的数量也设定为两根。
本发明的高效N型双面太阳电池，印刷金属电极后，在磷背场的作用下，将入射到太阳电池背面的光产生的载流子收集，实现了双面光电转化效应，从而大幅增加发电量，也打破了单面电池单面受光而导致电池光电 转换效率的限制。并且太阳电池背面使用磷重掺杂，可以使电池无翘曲，能够加工更薄的硅衬底。同时抛光钝化层和N+钝化层，具有提高电池开路电压的作用，从而进一步提高电池的转换效率。与现有P型双面电池相比，本发明具有更好的弱光响应和高温特性，在早晨和傍晚发出更多的电量。
以上所述仅是本发明的较佳实施例而已，并非对本发明做任何形式上的限制，虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明，任何熟悉本专业的技术人员，在不脱离本发明技术方案的范围内，当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本发明技术方案的范围内。

Claims (8)

  1. 一种高效N型双面太阳电池，其特征在于，包括：
    具有织构化表面的N型电池基体；
    形成于所述N型电池基体正面的P型掺杂区；
    于所述N型电池基体背面刻蚀形成的抛光钝化层；
    于所述抛光钝化层中临近所述N型电池基体的顶部经磷掺杂工艺形成的N+钝化层；
    形成于所述P型掺杂区上的第一二氧化硅氧化层和形成于所述N+钝化层上的第二二氧化硅氧化层；
    形成于所述第一二氧化硅氧化层上的第一氮化硅减反膜和形成于所述第二二氧化硅氧化层上的第二氮化硅减反膜；以及
    形成于所述N型电池基体正面的第一金属电极和形成于所述N型电池基体背面的第二金属电极。
  2. 根据权利要求1所述的高效N型双面太阳电池，其特征在于，所述N型电池基体为磷掺杂的N型硅片。
  3. 根据权利要求1所述的高效N型双面太阳电池，其特征在于，所述P型掺杂区的方阻为30Ω/□～130Ω/□。
  4. 根据权利要求1所述的高效N型双面太阳电池，其特征在于，所述抛光钝化层的反射率大于15％。
  5. 根据权利要求1所述的高效N型双面太阳电池，其特征在于，所述N+钝化层的方阻为20Ω/□～90Ω/□，厚度为0.3μm～0.8μm。
  6. 根据权利要求1所述的高效N型双面太阳电池，其特征在于，所述第一氮化硅减反膜的厚度为50nm～100nm，折射率为2.0～2.3。
  7. 根据权利要求1所述的高效N型双面太阳电池，其特征在于，所述第二氮化硅减反膜的厚度为50nm～110nm，折射率为1.9～2.2。
  8. 根据权利要求1所述的高效N型双面太阳电池，其特征在于，所述第一金属电极和所述第二金属电极均由主栅电极和副栅电极组成，其中所述主栅电极的根数为0～5根，所述副栅电极的根数为70～110根。
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