CN107369726B - n型晶体硅双面太阳电池 - Google Patents
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 80
- 239000010703 silicon Substances 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 238000002161 passivation Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910017107 AlOx Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910004286 SiNxOy Inorganic materials 0.000 claims description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910004012 SiCx Inorganic materials 0.000 claims 1
- 238000005215 recombination Methods 0.000 abstract description 17
- 230000006798 recombination Effects 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Abstract
本发明提供一种n型晶体硅双面太阳电池,包括衬底,衬底采用n型晶体硅片,n型晶体硅片的正面掺杂形成p+型晶体硅层,p+型晶体硅层上局部设置p++型硅膜层,p+型晶体硅层和p++型硅膜层共同正表面沉积正面钝化减反射层,正面金属电极层穿透正面钝化减反射层并与p++型硅膜层接触;n+型晶体硅层和n++型硅膜层的共同正表面沉积背面钝化减反射层。本发明的正面和背面金属电极层与衬底表面掺杂层之间设置了重掺杂硅膜层形成的钝化接触层,既避免了金属电极直接接触硅片表面掺杂层造成的接触区复合,又扩展了硅片表面掺杂区的掺杂浓度范围,可以同时获得较低的钝化区和接触区复合电流,提高电池开路电压和转化效率。
Description
技术领域
本发明涉及一种n型晶体硅双面太阳电池。
背景技术
随着光伏市场的发展,人们对高效晶体硅电池的需求越来越急迫。相对p型晶体硅电池而言,由于n型晶体硅对金属杂质不敏感,或者说具有很好的忍耐性能,故其少数载流子具有较大的扩散长度;此外,n型晶体硅采用磷掺杂,不存在因光照而导致B-O络合体的形成,因而不存在p型晶体硅电池中的光致衰退现象。因此,n型晶体硅电池逐渐成为众多研究机构和光伏企业关注的对象。
在所有n型晶体硅电池中,n-PERT双面电池(Passivated Emitter Rear Totally-diffused,即发射结钝化全背场扩散电池),如附图1所示是器件结构和制备工艺与现有p型晶硅电池最接近的,最容易被大多数企业采用的技术路径。通常,n-PERT双面电池以n型单晶硅片为衬底,如图1中的n型晶体硅层01,在其正、背面分别掺杂硼、磷原子如图1形成p+型晶体硅层02、n+型晶体硅层05,形成p+n发射极和nn+背电场,然后采用介质膜钝化正、背面,分别形成钝化减反射膜层03、钝化介质膜层06,最后穿透介质膜形成正、背面接触电极,即金属栅线电极04、金属背电极07。目前,p型侧的丝网印刷金属化是一个尚未完全解决的技术难题。
通常,为了降低Ag浆与p型层的接触电阻,需掺入一定量的Al,而Al的存在会造成p型发射极接触区复合电流增加。目前解决此问题的办法有三种:其一是采用较深的结深,同时保持相对较小的表面浓度,以防止钝化区复合电流升高;其二是采用选择性发射极,以屏蔽接触区复合;其三是采用电镀技术以降低接触区面积和复合。以上方法虽然在一定程度上可以缓解正面接触区的复合,但由于金属电极与p+型发射极表面仍然直接接触,金属离子很容易渗透到硼扩散区(p+型晶体硅层),破坏电极下面的p+n结,从而造成p+n结区的复合增加,电池开路电压和转换效率降低;另外,Ag浆料中引入Al会使浆料的体电阻率升高,并导致电池串联电阻增大,填充因子降低。
M.K. Stodolny等人在文献【N-Type Polysilicon Passivating Contacts forIndustrial Bifacial N-PERT Cells,EUPVSEC-2016】提出采用超薄氧化硅层15与n++型硅膜层16钝化n-PERT电池的n型晶体硅层11背面,如附图2所示,虽然降低背面金属化时造成的接触区复合,但其正面仍然采用丝网印刷金属栅线电极14直接接触p+型晶体硅层12,存在较大的接触区复合,电池的开路电压和转换效率难以明显提升。如图2,采用介质膜钝化正、背面,分别形成钝化介质膜层17、金属背电极18,最后穿透介质膜形成正、背面接触电极,即金属栅线电极14、金属背电极18。另外,由于背面全部采用n++型多晶硅薄膜覆盖,多晶硅薄膜对背面入射光存在较大的光吸收,从而降低了电池背面的短路电流和转换效率。
发明内容
本发明的目的是提供一种n型晶体硅双面太阳电池,克服n-PERT电池中金属电极直接接触p+型发射极表面造成的接触区复合增加及开路电压降低的问题。
本发明的技术解决方案是:
一种n型晶体硅双面太阳电池,包括衬底、p+型晶体硅层、p++型硅膜层、正面钝化减反射层、正面金属电极层、n+型晶体硅层、n++型硅膜层、背面钝化减反射层和背面金属电极层,衬底采用n型晶体硅片,n型晶体硅片的正面掺杂形成p+型晶体硅层,p+型晶体硅层上局部设置p++型硅膜层,即p++型硅膜层设于正面金属电极层下方,p+型晶体硅层和p++型硅膜层共同正表面沉积正面钝化减反射层,正面金属电极层穿透正面钝化减反射层并与p++型硅膜层接触;n型晶体硅片的背面掺杂形成的n+型晶体硅层,n+型晶体硅层上局部设置n++型硅膜层,n+型晶体硅层和n++型硅膜层的共同正表面沉积背面钝化减反射层,背面金属电极层穿透背面钝化减反射层并与n++型硅膜层接触。
进一步地,n型晶体硅片采用n型单晶硅片或n型多晶硅片,n型晶体硅片的电阻率在0.3~10Ωcm,厚度在50~500um。
进一步地,p+型晶体硅层的厚度在0.2~2um,方块电阻在20~200Ω/□。
进一步地,n+型晶体硅层的厚度在0.2~2um,方块电阻在20~200Ω/□。
进一步地,p++型硅膜层采用硼掺杂的非晶硅、非晶氧化硅、微晶硅、微晶氧化硅或多晶硅,p++型硅膜层的厚度在10nm~10um。
进一步地,p++型硅膜层与p+型晶体硅层之间附带一层超薄氧化硅层,超薄氧化硅层的厚度在1~3nm。
进一步地,n++型硅膜层采用磷掺杂的非晶硅、非晶氧化硅、微晶硅、微晶氧化硅或多晶硅,n++型硅膜层厚度在10nm~10um。
进一步地,n++型硅膜层与n型晶体硅层之间附带一层超薄氧化硅层,超薄氧化硅层厚度在1~3nm。
进一步地,正面钝化减反射层至少包含a-SiNx、a-SiOx、a-SiCx、a-SiCxNy、a-SiNxOy、a-AlOx中的任意一种或多种的组合,正面钝化减反射层厚度在60~150nm,背面钝化减反射层至少包含a-SiNx、a-SiOx、a-SiCx、a-SiCxNy、a-SiNxOy、a-AlOx中的任意一种或多种的组合,背面钝化减反射层厚度在60~150nm。
进一步地,正面金属栅线电极为Ag、Ni/Ag、Ni/Cu、Ni/Cu/Sn或Ni/Cu/Ag电极中的任意一种,背面金属栅线电极为Ag、Ni/Ag、Ni/Cu、Ni/Cu/Sn或Ni/Cu/Ag电极中的任意一种。
本发明的有益效果是,与现有技术相比,该种n型晶体硅双面太阳电池,具备以下优势:正面和背面金属电极与硅片表面掺杂层之间设置了重掺杂硅膜层形成的钝化接触层,既避免了金属电极直接接触硅片表面掺杂层造成的接触区复合,又扩展了硅片表面掺杂区的掺杂浓度范围,可以同时获得较低的钝化区和接触区复合电流,提高电池开路电压和转化效率。
附图说明
图1是现有的n-PERT晶体硅太阳电池的结构示意图;
图1中,1-n型晶体硅层;2-p+型晶体硅层;3-钝化减反射膜层;4-金属栅线电极;5-n+型晶体硅层;6-钝化介质膜层;7-金属背电极;
图2是现有技术中M.K. Stodolny等人的n-PERT晶体硅太阳电池的结构示意图;
图2中,1-n型晶体硅层;2-p+型晶体硅层;3-钝化减反射膜层;4-金属栅线电极;5-超薄氧化硅层;6-n++型硅膜层;7-钝化介质膜层;8-金属背电极;
图3是本发明实施例n型晶体硅双面太阳电池的结构示意图;
图3中,1-n型晶体硅片;2-p+型晶体硅层;3-n+型晶体硅层;4-p++型硅膜层;5-n++型硅膜层;6-正面钝化减反射层;7-背面钝化减反射层;8-正面金属电极层;9-背面金属电极层。
具体实施方式
下面结合附图详细说明本发明的优选实施例。
实施例
一种n型晶体硅双面太阳电池,如图3,包括衬底、p+型晶体硅层2、p++型硅膜层4、正面钝化减反射层6、正面金属电极层8、n+型晶体硅层3、n++型硅膜层5、背面钝化减反射层7和背面金属电极层9,衬底采用n型晶体硅片1,n型晶体硅片1的正面掺杂形成p+型晶体硅层2,p+型晶体硅层2上局部设置p++型硅膜层4,即p++型硅膜层4设于正面金属电极层8下方,p+型晶体硅层2和p++型硅膜层4共同正表面沉积正面钝化减反射层6,正面金属电极层8穿透正面钝化减反射层6并与p++型硅膜层4接触;n型晶体硅片1的背面掺杂形成的n+型晶体硅层3,n+型晶体硅层3上局部设置n++型硅膜层5,n+型晶体硅层3和n++型硅膜层5的共同正表面沉积背面钝化减反射层7,背面金属电极层9穿透背面钝化减反射层7并与n++型硅膜层5接触。
通过上述结构,正面金属电极层8、背面金属电极层9与硅片表面p+型晶体硅层2、n+型晶体硅层3之间设置了重掺杂硅膜层即p++型硅膜层4、n++型硅膜层5形成的钝化接触层,既避免了正面金属电极层8、背面金属电极层9直接接触n型晶体硅片1表面p+型晶体硅层2、n+型晶体硅层3造成的接触区复合,又扩展了硅片表面p+型晶体硅层2、n+型晶体硅层3的掺杂浓度范围,可以同时获得较低的钝化区和接触区复合电流,提高电池开路电压和转化效率。与现有技术相比,无论是降低金属接触复合,还是在避免硅薄膜寄生光吸收方面,实施例在正面和背面均有明显改善。
实施例通过p+型晶体硅层2上局部设置p++型硅膜层4,即p++型硅膜层4设于正面金属电极层8下方,能降低正面金属电极层8下方的复合;如果用全部设置,由于p++型硅膜层4会对正面入射光产生寄生吸收,降低电池的短路电流。
n型晶体硅片1,采用n型单晶硅片,其电阻率在2Ωcm,厚度在180um;该n型晶体硅层1主要用于吸收光子,产生光生载流子。
p+型晶体硅层2,厚度在1um,方块电阻在60Ω/□;该p+型晶体硅层2与n型晶体硅层1形成同质p+n发射极,用来分离光生载流子。
n+型晶体硅层3,厚度在0.5um,方块电阻在70Ω/□;该n+型晶体硅层3与n型晶体硅层1形成同质nn+背电场,用来促进光生载流子的分离和多数载流子电子的收集。
p++型硅膜层4为硼掺杂的多晶硅,其厚度在150nm;p++型硅膜层4与p+型晶体硅层2之间附带一层超薄氧化硅层,其厚度在1.5nm。该p++型硅膜层4与p+型晶体硅层2形成p++p+型选择性发射极,既能钝化电池p+发射极的接触区,降低接触区表面复合,同时能与p+型晶体硅层2及正面金属电极层8形成良好的欧姆接触。
n++型硅膜层5为磷掺杂的多晶硅,其厚度在150nm;n++型硅膜层5包括下面附带一层超薄氧化硅层,其厚度在1.5nm。该n++型硅膜层5与n型晶体硅层1形成nn++型背电场,既能钝化电池背表面,减少背表面复合,同时能与n型晶体硅层1及背面金属电极层8形成良好的欧姆接触。
正面钝化减反射层6为a-AlOx与a-SiNx形成的复合膜层,其厚度分别在10nm和60nm。该正面钝化减反射层6要用来减少入射光在硅片表面的反射,同时对p+型晶体硅层2形成良好的表面钝化。
背面钝化减反射层7为a-SiNx,其厚度在80nm。该背面钝化减反射层7要用来减少背面入射光在硅片表面的反射,同时对nn++型背电场形成良好的界面钝化。
正面金属电极层8为丝网印刷形成的Ag栅线电极,该正面金属电极层8用来收集光生载流子中的空穴。
背面金属电极层9为丝网印刷形成的Ag栅线电极,该背面金属电极层9用来收集光生载流子中的电子。
Claims (10)
1.一种n型晶体硅双面太阳电池,其特征在于:包括衬底、p+型晶体硅层、p++型硅膜层、正面钝化减反射层、正面金属电极层、n+型晶体硅层、n++型硅膜层、背面钝化减反射层和背面金属电极层,衬底采用n型晶体硅片,n型晶体硅片的正面掺杂形成p+型晶体硅层,p+型晶体硅层上局部设置p++型硅膜层,即p++型硅膜层设于正面金属电极层下方,p+型晶体硅层和p++型硅膜层共同正表面沉积正面钝化减反射层,正面金属电极层穿透正面钝化减反射层并与p++型硅膜层接触;p++型硅膜层位于正面金属电极层与p+型晶体硅层之间;n型晶体硅片的背面掺杂形成的n+型晶体硅层,n+型晶体硅层上局部设置n++型硅膜层,n+型晶体硅层和n++型硅膜层的共同正表面沉积背面钝化减反射层,背面金属电极层穿透背面钝化减反射层并与n++型硅膜层接触,n++型硅膜层位于背面金属电极层与n+型晶体硅层之间。
2.如权利要求1所述的n型晶体硅双面太阳电池,其特征在于:n型晶体硅片采用n型单晶硅片或n型多晶硅片,n型晶体硅片的电阻率在0.3~10Ωcm,厚度在50~500um。
3.如权利要求1所述的n型晶体硅双面太阳电池,其特征在于:p+型晶体硅层的厚度在0.2~2um,方块电阻在20~200Ω/□。
4.如权利要求3所述的n型晶体硅双面太阳电池,其特征在于:n+型晶体硅层的厚度在0.2~2um,方块电阻在20~200Ω/□。
5.如权利要求4所述的n型晶体硅双面太阳电池,其特征在于:p++型硅膜层采用硼掺杂的非晶硅、非晶氧化硅、微晶硅、微晶氧化硅或多晶硅,p++型硅膜层的厚度在10nm~10um。
6.如权利要求5所述的n型晶体硅双面太阳电池,其特征在于:p++型硅膜层与p+型晶体硅层之间附带一层超薄氧化硅层,超薄氧化硅层的厚度在1~3nm。
7.如权利要求6所述的n型晶体硅双面太阳电池,其特征在于:n++型硅膜层采用磷掺杂的非晶硅、非晶氧化硅、微晶硅、微晶氧化硅或多晶硅,n++型硅膜层厚度在10nm~10um。
8.如权利要求7所述的n型晶体硅双面太阳电池,其特征在于:n++型硅膜层与n型晶体硅层之间附带一层超薄氧化硅层,超薄氧化硅层厚度在1~3nm。
9.如权利要求1-8任一项所述的n型晶体硅双面太阳电池,其特征在于:正面钝化减反射层至少包含a-SiNx、a-SiOx、a-SiCx、a-SiCxNy、a-SiNxOy、a-AlOx中的任意一种或多种的组合,正面钝化减反射层厚度在60~150nm,背面钝化减反射层至少包含a-SiNx、a-SiOx、a-SiCx、a-SiCxNy、a-SiNxOy、a-AlOx中的任意一种或多种的组合,背面钝化减反射层厚度在60~150nm。
10.如权利要求1-8任一项所述的n型晶体硅双面太阳电池,其特征在于:正面金属栅线电极为Ag、Ni/Ag、Ni/Cu、Ni/Cu/Sn或Ni/Cu/Ag电极中的任意一种,背面金属栅线电极为Ag、Ni/Ag、Ni/Cu、Ni/Cu/Sn或Ni/Cu/Ag电极中的任意一种。
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