CN103985778A - 具有选择性发射极的异质结太阳能电池及其制备方法 - Google Patents
具有选择性发射极的异质结太阳能电池及其制备方法 Download PDFInfo
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- CN103985778A CN103985778A CN201410217097.1A CN201410217097A CN103985778A CN 103985778 A CN103985778 A CN 103985778A CN 201410217097 A CN201410217097 A CN 201410217097A CN 103985778 A CN103985778 A CN 103985778A
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- amorphous silicon
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- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 127
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000178 monomer Substances 0.000 claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 23
- 238000002360 preparation method Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract 2
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000002161 passivation Methods 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035245—Superlattices; Multiple quantum well structures characterised by amorphous semiconductor layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410217097.1A CN103985778B (zh) | 2014-05-21 | 2014-05-21 | 具有选择性发射极的异质结太阳能电池及其制备方法 |
Applications Claiming Priority (1)
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CN201410217097.1A CN103985778B (zh) | 2014-05-21 | 2014-05-21 | 具有选择性发射极的异质结太阳能电池及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103985778A true CN103985778A (zh) | 2014-08-13 |
CN103985778B CN103985778B (zh) | 2016-01-20 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105789343A (zh) * | 2016-04-07 | 2016-07-20 | 乐叶光伏科技有限公司 | 一种具有透明电极的n型双面太阳能电池及其制备方法 |
CN110600577A (zh) * | 2018-06-12 | 2019-12-20 | 君泰创新(北京)科技有限公司 | 一种异质结太阳能电池及其制备方法 |
CN110767755A (zh) * | 2018-07-09 | 2020-02-07 | 君泰创新(北京)科技有限公司 | 导电膜的镀膜方法、太阳能电池的制备方法及太阳能电池 |
CN112599616A (zh) * | 2020-12-15 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
CN114335228A (zh) * | 2021-12-30 | 2022-04-12 | 中威新能源(成都)有限公司 | 异质结太阳电池、其制备方法及发电装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009524916A (ja) * | 2006-01-26 | 2009-07-02 | アライズ テクノロジーズ コーポレーション | 太陽電池 |
CN102110734A (zh) * | 2011-01-18 | 2011-06-29 | 西安交通大学 | 一种纳米硅/晶体硅异质结光伏电池 |
CN103077984A (zh) * | 2012-12-28 | 2013-05-01 | 浙江金贝能源科技有限公司 | 一种n型硅衬底的双pin结双面太阳能电池 |
CN103258900A (zh) * | 2012-02-21 | 2013-08-21 | 上海超日太阳能科技股份有限公司 | 基于se选择性发射结的n型衬底微晶硅异质结电池的制备方法 |
CN203850312U (zh) * | 2014-05-21 | 2014-09-24 | 常州天合光能有限公司 | 具有选择性发射极的异质结太阳能电池 |
-
2014
- 2014-05-21 CN CN201410217097.1A patent/CN103985778B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009524916A (ja) * | 2006-01-26 | 2009-07-02 | アライズ テクノロジーズ コーポレーション | 太陽電池 |
CN102110734A (zh) * | 2011-01-18 | 2011-06-29 | 西安交通大学 | 一种纳米硅/晶体硅异质结光伏电池 |
CN103258900A (zh) * | 2012-02-21 | 2013-08-21 | 上海超日太阳能科技股份有限公司 | 基于se选择性发射结的n型衬底微晶硅异质结电池的制备方法 |
CN103077984A (zh) * | 2012-12-28 | 2013-05-01 | 浙江金贝能源科技有限公司 | 一种n型硅衬底的双pin结双面太阳能电池 |
CN203850312U (zh) * | 2014-05-21 | 2014-09-24 | 常州天合光能有限公司 | 具有选择性发射极的异质结太阳能电池 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105789343A (zh) * | 2016-04-07 | 2016-07-20 | 乐叶光伏科技有限公司 | 一种具有透明电极的n型双面太阳能电池及其制备方法 |
CN110600577A (zh) * | 2018-06-12 | 2019-12-20 | 君泰创新(北京)科技有限公司 | 一种异质结太阳能电池及其制备方法 |
CN110767755A (zh) * | 2018-07-09 | 2020-02-07 | 君泰创新(北京)科技有限公司 | 导电膜的镀膜方法、太阳能电池的制备方法及太阳能电池 |
CN112599616A (zh) * | 2020-12-15 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池及其制作方法 |
CN114335228A (zh) * | 2021-12-30 | 2022-04-12 | 中威新能源(成都)有限公司 | 异质结太阳电池、其制备方法及发电装置 |
WO2023124048A1 (zh) * | 2021-12-30 | 2023-07-06 | 中威新能源(成都)有限公司 | 异质结太阳电池、其制备方法及发电装置 |
CN114335228B (zh) * | 2021-12-30 | 2024-03-29 | 通威太阳能(成都)有限公司 | 异质结太阳电池、其制备方法及发电装置 |
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CN103985778B (zh) | 2016-01-20 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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CP03 | Change of name, title or address | ||
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |