CN103730532A - 掺氢晶化硅钝化的异质结太阳能电池 - Google Patents

掺氢晶化硅钝化的异质结太阳能电池 Download PDF

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CN103730532A
CN103730532A CN201410011688.3A CN201410011688A CN103730532A CN 103730532 A CN103730532 A CN 103730532A CN 201410011688 A CN201410011688 A CN 201410011688A CN 103730532 A CN103730532 A CN 103730532A
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包健
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Changzhou Trina Solar Energy Co Ltd
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Abstract

本发明公开了一种掺氢晶化硅钝化的异质结太阳能电池，它包括P型晶体硅衬底、N型掺氢晶化硅层、重掺杂N型非晶硅层、正面透明导电膜层、正面电极层、P型掺氢晶化硅层、重掺杂P型非晶硅层、背面透明导电膜层和背面电极层；N型掺氢晶化硅层沉积在P型晶体硅衬底的正面上；重掺杂N型非晶硅层沉积在N型掺氢晶化硅层的上表面上；P型掺氢晶化硅层沉积在P型晶体硅衬底的背面上；重掺杂P型非晶硅层沉积在P型掺氢晶化硅层的下表面上；背面透明导电膜层沉积在重掺杂P型非晶硅层的下表面上。本发明不仅能够保持较好的钝化效果，从而获得高开路电压，而且可以降低太阳能电池的整体串联电阻，进而提高填充因子，提高太阳能电池的转换效率。

Description

掺氢晶化硅钝化的异质结太阳能电池
技术领域
本发明涉及一种掺氢晶化硅钝化的异质结太阳能电池，属于异质结太阳能电池技术领域。
背景技术
目前，以P型晶体硅作为衬底制作异质结太阳能电池器件，一般使用的是本征型（intrinsic）的非晶硅薄膜（a-Si:H)钝化晶体硅（衬底）的上下表面，同时加上掺杂的n+-a-Si:H形成发射极和p+-a-Si:H形成背场（BSF），但由于不掺杂的本征非晶硅薄膜材料的电阻率较大，因此制作成电池后串联电阻较大，填充因子FF较低，电池转换效率不高。
发明内容
本发明所要解决的技术问题是克服现有技术的缺陷，提供一种掺氢晶化硅钝化的异质结太阳能电池，它不仅能够保持较好的钝化效果，从而获得高开路电压，而且可以降低太阳能电池的整体串联电阻，进而提高填充因子，提高太阳能电池的转换效率。
为了解决上述技术问题，本发明的技术方案是：一种掺氢晶化硅钝化的异质结太阳能电池，它包括P型晶体硅衬底、N型掺氢晶化硅层、重掺杂N型非晶硅层、正面透明导电膜层、正面电极层、P型掺氢晶化硅层、重掺杂P型非晶硅层、背面透明导电膜层和背面电极层，P型晶体硅衬底具有一正面和一背面；N型掺氢晶化硅层沉积在P型晶体硅衬底的正面上；重掺杂N型非晶硅层沉积在N型掺氢晶化硅层的上表面上；正面透明导电膜层沉积在重掺杂N型非晶硅层的上表面上；正面电极层位于正面透明导电膜层的上表面上，并且通过该正面透明导电膜层与重掺杂N型非晶硅层电性连接；P型掺氢晶化硅层沉积在P型晶体硅衬底的背面上；重掺杂P型非晶硅层沉积在P型掺氢晶化硅层的下表面上；背面透明导电膜层沉积在重掺杂P型非晶硅层的下表面上；背面电极层位于背面透明导电膜层的下表面上，并且通过该背面透明导电膜层与重掺杂P型非晶硅层电性连接。
进一步，所述的正面电极层和/或背面电极层为银栅极。
进一步，所述的正面透明导电膜层和/或背面透明导电膜层为ITO薄膜。
进一步，所述的P型晶体硅衬底的厚度为90~300μm。
进一步，所述的N型掺氢晶化硅层的厚度为3~15nm，禁带宽度为1.2~1.4eV。
进一步，所述的重掺杂N型非晶硅层的厚度为10~30nm，禁带宽度为1.7~1.9eV。
进一步，所述的正面透明导电膜层的厚度为60~90nm。
进一步，所述的P型掺氢晶化硅层的厚度为3~15nm。
进一步，所述的重掺杂P型非晶硅层的厚度为10~30nm，禁带宽度为1.7~1.9eV。
更进一步，所述的背面透明导电膜层的厚度为80~150nm。
采用了上述技术方案，本发明具有以下的有益效果：
1、本异质结太阳能电池的背场结构部分即P型晶体硅衬底（P-c-Si）和重掺杂P型非晶硅层（p+-a-Si:H）之间，插入一层P型掺氢晶化硅层（p-c-Si:H）；异质结太阳能电池的发射极部分即P型晶体硅衬底（P-c-Si）和重掺杂N型非晶硅层（n+-a-Si:H）之间，插入一层N型掺氢晶化硅层（n-c-Si:H），由于氢原子的存在，可以钝化硅片表面，保持较好的钝化效果从而获得异质结电池高开路电压（Voc）。
2、由于P型掺氢晶化硅层作为背面钝化层掺入了硼原子和N型掺氢晶化硅层作为正面钝化层中掺入了磷原子，可以降低钝化层的电阻，从而降低整体太阳能电池串联电阻，提高太阳电池的填充因子FF，提升异质结太阳能电池的转换效率。
附图说明
图1为本发明的掺氢晶化硅钝化的异质结太阳能电池的结构示意图；
图2为本发明的掺氢晶化硅钝化的异质结太阳能电池的制作工艺流程图。
具体实施方式
为了使本发明的内容更容易被清楚地理解，下面根据具体实施例并结合附图，对本发明作进一步详细的说明，
如图1所示，一种掺氢晶化硅钝化的异质结太阳能电池，它包括：P型晶体硅衬底1、N型掺氢晶化硅层2、重掺杂N型非晶硅层3、正面透明导电膜层4、正面电极层5、P型掺氢晶化硅层6、重掺杂P型非晶硅层7、背面透明导电膜层8和背面电极层9；P型晶体硅衬底1其具有一正面和一背面；N型掺氢晶化硅层2沉积在P型晶体硅衬底1的正面上；重掺杂N型非晶硅层3沉积在N型掺氢晶化硅层2的上表面上；正面透明导电膜层4沉积在重掺杂N型非晶硅层3的上表面上；正面电极层5位于正面透明导电膜层4的上表面上，并且通过该正面透明导电膜层4与重掺杂N型非晶硅层3电性连接；P型掺氢晶化硅层6沉积在P型晶体硅衬底1的背面上；重掺杂P型非晶硅层7沉积在P型掺氢晶化硅层6的下表面上；背面透明导电膜层8沉积在重掺杂P型非晶硅层7的下表面上；背面电极层9位于背面透明导电膜层8的下表面上，并且通过该背面透明导电膜层8与重掺杂P型非晶硅层7电性连接。
正面电极层5和/或背面电极层9为银栅极。
正面透明导电膜层4和/或背面透明导电膜层8为ITO薄膜。
P型晶体硅衬底1的厚度为90~300μm。
N型掺氢晶化硅层2的厚度为3~15nm，禁带宽度为1.2~1.4eV。
重掺杂N型非晶硅层3的厚度为10~30nm，禁带宽度为1.7~1.9eV。
正面透明导电膜层4的厚度为60~90nm。
P型掺氢晶化硅层6的厚度为3~15nm。
重掺杂P型非晶硅层7的厚度为10~30nm，禁带宽度为1.7~1.9eV。
背面透明导电膜层8的厚度为80~150nm。
本发明的工作原理如下：
本异质结太阳能电池的背场结构部分即P型晶体硅衬底1（P-c-Si）和重掺杂P型非晶硅层7（p+-a-Si:H）之间，插入一层P型掺氢晶化硅层6（p-c-Si:H）；异质结太阳能电池的发射极部分即P型晶体硅衬底1（P-c-Si）和重掺杂N型非晶硅层3（n+-a-Si:H）之间，插入一层N型掺氢晶化硅层2（n-c-Si:H），由于氢原子的存在，可以钝化硅片表面，保持较好的钝化效果从而获得异质结电池高开路电压（Voc）；另外，由于P型掺氢晶化硅层6作为背面钝化层掺入了硼原子和N型掺氢晶化硅层2作为正面钝化层中掺入了磷原子，可以降低钝化层的电阻，从而降低整体太阳能电池串联电阻，提高太阳电池的填充因子FF，提升异质结太阳能电池的转换效率。
本异质结太阳能电池器件的一种制作工艺流程如下：
采用厚度约200微米的P型晶体硅经过标准的RCA清洗、制绒和氢氟酸处理，在P型晶体硅衬底1的正面通过PECVD工艺沉积一层N型掺氢晶化硅层2，厚度约3-15nm，钝化P型晶体硅衬底1表面，减小表面复合速率，获得良好的界面特性；再沉积一层重掺杂N型非晶硅层3，厚度为10-30nm，再在P型晶体硅衬底1的背面通过PECVD工艺沉积P型掺氢晶化硅层6，典型厚度为3-15nm，最后沉积一层重掺杂P型非晶硅层7 ，厚度为10-30nm。上述主体电池结构完成后，通过溅射或蒸镀等方法，在上述结构的上下表面采用ITO薄膜分别沉积正面透明导电膜层4和背面透明导电膜层8，再用低温银浆料在上下表面丝网印刷，经过低温烧结工艺得到银栅极，完成本异质太阳能电池的制作。
以上所述的具体实施例，对本发明解决的技术问题、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种掺氢晶化硅钝化的异质结太阳能电池，其特征在于，它包括：
一P型晶体硅衬底（1），其具有一正面和一背面；
一N型掺氢晶化硅层（2），沉积在P型晶体硅衬底（1）的正面上；
一重掺杂N型非晶硅层（3），沉积在N型掺氢晶化硅层（2）的上表面上；
一正面透明导电膜层（4），沉积在重掺杂N型非晶硅层（3）的上表面上；
一正面电极层（5），位于正面透明导电膜层（4）的上表面上，并且通过该正面透明导电膜层（4）与重掺杂N型非晶硅层（3）电性连接；
一P型掺氢晶化硅层（6），沉积在P型晶体硅衬底（1）的背面上；
一重掺杂P型非晶硅层（7），沉积在P型掺氢晶化硅层（6）的下表面上；
一背面透明导电膜层（8），沉积在重掺杂P型非晶硅层（7）的下表面上；
一背面电极层（9），位于背面透明导电膜层（8）的下表面上，并且通过该背面透明导电膜层（8）与重掺杂P型非晶硅层（7）电性连接。
2.根据权利要求1所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的正面电极层（5）和/或背面电极层（9）为银栅极。
3.根据权利要求1或2所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的正面透明导电膜层（4）和/或背面透明导电膜层（8）为ITO薄膜。
4.根据权利要求1所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的P型晶体硅衬底（1）的厚度为90~300μm。
5.根据权利要求1所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的N型掺氢晶化硅层（2）的厚度为3~15nm，禁带宽度为1.2~1.4eV。
6.根据权利要求1所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的重掺杂N型非晶硅层（3）的厚度为10~30nm，禁带宽度为1.7~1.9eV。
7.根据权利要求1所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的正面透明导电膜层（4）的厚度为60~90nm。
8.根据权利要求1所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的P型掺氢晶化硅层（6）的厚度为3~15nm。
9.根据权利要求1所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的重掺杂P型非晶硅层（7）的厚度为10~30nm，禁带宽度为1.7~1.9eV。
10.根据权利要求1所述的N型掺氢晶化硅钝化的异质结太阳能电池器件，其特征在于：所述的背面透明导电膜层（8）的厚度为80~150nm。
CN201410011688.3A 2014-01-10 2014-01-10 掺氢晶化硅钝化的异质结太阳能电池 Pending CN103730532A (zh)

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Application publication date: 20140416