CN106252424A - 热氧化改善钝化层界面的异质结电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种热氧化改善钝化层截面的异质结太阳电池，包括：晶体硅衬底（1），其具有一正面和一背面，其特征在于：在晶体硅衬底（1）的正面依次设置：热氧化层（2）、本征非晶硅薄膜层（3）、正面掺杂层（4）、透明导电薄膜层（5）以及正面金属栅线（6）；在晶体硅衬底（1）的背面依次设置：热氧化层（2）、本征非晶硅薄膜层（3）、背面掺杂层（7）、透明导电薄膜层（5）以及背面金属栅线（8）。本发明还公开了上述异质结太阳电池的制备方法。本发明能改善单晶硅片表面缺陷，获得更好的钝化效果，提高少子寿命，增大电池的转换效率。
Description
技术领域
本发明涉及一种异质结太阳电池，尤其设计一种热氧化改善钝化层界面的异质结太阳电池及其制备方法，属于太阳电池技术领域。
背景技术
太阳能电池的钝化是提高电池效率一个主要的途径，非晶硅异质结电池中钝化层的钝化效果尤为重要。单晶硅片表面由于存在各种缺陷，成为载流子的复合中心，这些复合中心降低了少子寿命，使太阳电池的转换效率偏低。提高钝化层的钝化效果一直是异质结电池的一个研究方向。
发明内容
本发明的目的是针对现有技术的不足提供一种热氧化改善钝化层截面的异质结太阳电池及其制备方法，
为此，本发明采用如下技术方案：
一种热氧化改善钝化层截面的异质结太阳电池，包括：晶体硅衬底（1），其具有一正面和一背面，其特征在于：在晶体硅衬底（1）的正面依次设置：热氧化层（2）、本征非晶硅薄膜层（3）、正面掺杂层（4）、透明导电薄膜层（5）以及正面金属栅线（6）；在晶体硅衬底（1）的背面依次设置：热氧化层（2）、本征非晶硅薄膜层（3）、背面掺杂层（7）、透明导电薄膜层（5）以及背面金属栅线（8）。
进一步地，所述热氧化层（2）为采用热氧化工艺在硅片表面生长的SiOx薄膜。
进一步地，所述的透明导电薄膜层（5）采用PVD沉积法或者RPD沉积法制备在N型掺杂层和P型掺杂层上。
进一步，所述的N型掺杂层和P型掺杂层采用PECVD或者CATCVD沉积法沉积在本征非晶硅薄膜层上。
本发明的另一方面，还提供了一种热氧化改善钝化层截面的异质结太阳电池的制备方法，包含如下步骤：
S1：表面处理：对N型晶体硅衬底1进行标准RCA清洗，在进行PECVD之前采用HF溶液处理2min；
S2：制备热氧化层：将经过步骤S1处理后的衬底放入保温炉中，空气氛围下，120℃常压保温10分钟，在衬底的正面和背面分别生长1-5nm的氧化层；
S3：制备掺杂层：在N型晶体硅衬底1的正面和背面的本征非晶硅薄膜层上分别沉积N型掺杂层和P型掺杂层；
S4：制备透明导电薄膜：通过RPD，在N型掺杂层和P型掺杂层上分别沉积一层透明导电薄膜层；
S5：制备金属栅线层：在透明导电薄膜层上采用网印刷技术制备正面金属栅线层和背面金属栅线；
S6：在氧气氛围中烘干，完成本发明的热氧化改善钝化层截面的异质结太阳电池的制备。
进一步地，所述热氧化层（2）为采用热氧化工艺在硅片表面生长的SiOx薄膜。
本发明具有以下有益效果：
通过本发明提供的制备方法，使热氧化层作为钝化层的一部分，改善晶体硅衬底表面缺陷结构，降低载流子复合中心，提高少子寿命，提高电池的短路电流和开路电压，从而提高太阳电池的转换效率。
附图说明
图1为本发明的热氧化改善钝化层界面的异质结电池的结构示意图；
图2为本发明的热氧化改善钝化层界面的异质结电池的制备方法的流程示意图。
具体实施方式
以下结合附图与实施例对本发明作进一步详细描述。
实施例1：
如图1所示，以N型晶体硅衬底为例进行说明，本发明的热氧化改善钝化层截面的异质结太阳电池，包括：N型晶体硅衬底1，N型晶体硅衬底1的厚度为50-200um，电阻率为~5Ω·cm；其具有一正面和一背面，在N型晶体硅衬底1的正面依次设置：热氧化层2、本征非晶硅薄膜层3、N型掺杂层，即正面掺杂层4、透明导电薄膜层5以及正面金属栅线6；在N型晶体硅衬底1的背面依次设置：热氧化层2、本征非晶硅薄膜层3、P型掺杂层，即背面掺杂层7、透明导电薄膜层5以及背面金属栅线8。透明导电薄膜层5采用PVD沉积法或者RPD沉积法制备在N型掺杂层和P型掺杂层上；N型掺杂层和P型掺杂层采用PECVD或者CATCVD沉积法沉积在本征非晶硅薄膜层3上。
实施例2：
如图1、2所示，以N型晶体硅衬底为例进行说明，本发明的热氧化改善钝化层截面的异质结太阳电池的制备方法，包含如下步骤：
S1：表面处理：对N型晶体硅衬底1进行标准RCA清洗，在进行PECVD之前采用HF溶液处理2min；
S2：制备热氧化层：将经过步骤S1处理后的衬底放入保温炉中，空气氛围下，120℃常压保温10分钟，在衬底的正面和背面分别生长1-5nm的氧化层；
S3：制备掺杂层：在N型晶体硅衬底1的正面和背面的本征非晶硅薄膜层上分别沉积N型掺杂层和P型掺杂层；
S4：制备透明导电薄膜：通过RPD，在N型掺杂层和P型掺杂层上分别沉积一层透明导电薄膜层；
S5：制备金属栅线层：在透明导电薄膜层上采用网印刷技术制备正面金属栅线层和背面金属栅线；
S6：在氧气氛围中烘干，完成本发明的热氧化改善钝化层截面的异质结太阳电池的制备。
本发明同样可以用于P型晶体硅衬底，技术方案与实施例1和实施例2类似，在此不再赘述。
本以上所述的具体实施例，对本发明解决的技术问题、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (6)
1.一种热氧化改善钝化层截面的异质结太阳电池，包括：晶体硅衬底（1），其具有一正面和一背面，其特征在于：在晶体硅衬底（1）的正面依次设置：热氧化层（2）、本征非晶硅薄膜层（3）、正面掺杂层（4）、透明导电薄膜层（5）以及正面金属栅线（6）；在晶体硅衬底（1）的背面依次设置：热氧化层（2）、本征非晶硅薄膜层（3）、背面掺杂层（7）、透明导电薄膜层（5）以及背面金属栅线（8）。
2.根据权利要求1所述的异质结太阳电池，其特征在于：所述热氧化层（2）为 采用热氧化工艺在硅片表面生长的SiOx薄膜。
3.根据权利要求1所述的异质结太阳电池，其特征在于：所述的透明导电薄膜层（5）采用PVD沉积法或者RPD沉积法制备在N型掺杂层和P型掺杂层上。
4.根据权利要求1所述的异质结太阳电池，其特征在于：所述的N型掺杂层和P型掺杂层采用PECVD或者CATCVD沉积法沉积在本征非晶硅薄膜层上。
5.一种热氧化改善钝化层截面的异质结太阳电池的制备方法，包含如下步骤：
S1：表面处理：对N型晶体硅衬底1进行标准RCA清洗，在进行PECVD之前采用HF溶液处理2min；
S2：制备热氧化层：将经过步骤S1处理后的衬底放入保温炉中，空气氛围下，120℃常压保温10分钟，在衬底的正面和背面分别生长1-5nm的氧化层；
S3：制备掺杂层：在N型晶体硅衬底1的正面和背面的本征非晶硅薄膜层上分别沉积N型掺杂层和P型掺杂层；
S4：制备透明导电薄膜：通过RPD，在N型掺杂层和P型掺杂层上分别沉积一层透明导电薄膜层；
S5：制备金属栅线层：在透明导电薄膜层上采用网印刷技术制备正面金属栅线层和背面金属栅线；
S6：在氧气氛围中烘干，完成本发明的热氧化改善钝化层截面的异质结太阳电池的制备。
6.根据权利要求5所述的制备方法，其特征在于：所述热氧化层（2）为采用热氧化工艺在硅片表面生长的SiOx薄膜。
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Cited By (8)
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| CN109119491A (zh) * | 2017-06-23 | 2019-01-01 | 财团法人金属工业研究发展中心 | 太阳能电池结构及其制造方法 |
| WO2019085458A1 (zh) * | 2017-11-06 | 2019-05-09 | 君泰创新（北京）科技有限公司 | 太阳能电池及其制备方法 |
| CN111697110A (zh) * | 2020-06-12 | 2020-09-22 | 上海理想万里晖薄膜设备有限公司 | 异质结太阳能电池及其制造方法 |
| CN113937185A (zh) * | 2021-09-26 | 2022-01-14 | 福建新峰二维材料科技有限公司 | 一种采用氢钝化的异质结太阳电池的制造方法 |
| CN114122154A (zh) * | 2021-10-11 | 2022-03-01 | 中国科学院电工研究所 | 一种载流子选择性钝化接触太阳电池及其制备方法 |
| WO2022170872A1 (zh) * | 2021-02-09 | 2022-08-18 | 通威太阳能（成都）有限公司 | 高光电转换效率的hjt电池及其制备方法 |
| CN115985991A (zh) * | 2022-12-22 | 2023-04-18 | 通威太阳能（成都）有限公司 | 太阳电池及其制备方法 |
| CN116525723A (zh) * | 2023-06-28 | 2023-08-01 | 广东利元亨智能装备股份有限公司 | 异质结电池的制作方法及其电池 |
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| WO2022170872A1 (zh) * | 2021-02-09 | 2022-08-18 | 通威太阳能（成都）有限公司 | 高光电转换效率的hjt电池及其制备方法 |
| AU2021426902B2 (en) * | 2021-02-09 | 2024-01-18 | Tongwei Solar (Anhui) Co., Ltd. | HJT cell having high photoelectric conversion efficiency and preparation method therefor |
| US11973151B2 (en) | 2021-02-09 | 2024-04-30 | Tongwei Solar (Chengdu) Co., Ltd. | HJT cell having high photoelectric conversion efficiency and preparation method therefor |
| CN113937185A (zh) * | 2021-09-26 | 2022-01-14 | 福建新峰二维材料科技有限公司 | 一种采用氢钝化的异质结太阳电池的制造方法 |
| CN114122154A (zh) * | 2021-10-11 | 2022-03-01 | 中国科学院电工研究所 | 一种载流子选择性钝化接触太阳电池及其制备方法 |
| CN114122154B (zh) * | 2021-10-11 | 2023-12-19 | 中国科学院电工研究所 | 一种载流子选择性钝化接触太阳电池及其制备方法 |
| CN115985991A (zh) * | 2022-12-22 | 2023-04-18 | 通威太阳能（成都）有限公司 | 太阳电池及其制备方法 |
| CN116525723A (zh) * | 2023-06-28 | 2023-08-01 | 广东利元亨智能装备股份有限公司 | 异质结电池的制作方法及其电池 |
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