CN102770972A - 包括晶体氧化硅钝化薄膜的光伏电池以及用于制造该光伏电池的方法 - Google Patents
包括晶体氧化硅钝化薄膜的光伏电池以及用于制造该光伏电池的方法 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 238000002161 passivation Methods 0.000 title abstract description 15
- 239000010409 thin film Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 55
- 239000013078 crystal Substances 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 239000013081 microcrystal Substances 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 9
- BOKGTLAJQHTOKE-UHFFFAOYSA-N 1,5-dihydroxynaphthalene Chemical compound C1=CC=C2C(O)=CC=CC2=C1O BOKGTLAJQHTOKE-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 17
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 15
- 150000003254 radicals Chemical class 0.000 description 14
- 238000003475 lamination Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000004568 cement Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 229910014558 c-SiO Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
异质结光伏电池包含至少一个晶体氧化硅薄膜(11),该晶体氧化硅薄膜(11)直接置于晶体硅基底(1)的前或后表面(1a)的一个上,在所述基底(1)和非晶或微晶硅的层(3)之间。薄膜(11)用来确保基底(1)的所述表面(1a)的钝化。具体地,在沉积非晶硅的层(3)之前,薄膜(11)通过基团地氧化基底(1)的表面部分而获得。而且,本征或微掺杂的非晶硅的薄层(2)可置于所述薄膜(11)和非晶或微晶硅的层之间。
Description
技术领域
本发明涉及包括具有指定掺杂类型的晶体硅基底和非晶或微晶硅的层的异质结光伏电池,以及用于制造至少一个这种光伏电池的方法。
背景技术
异质结光伏电池由多层叠层制成,使得可以直接将光子转换为电信号。异质结特别地由指定掺杂类型(n或p)的晶体硅基底和与基底的掺杂类型相反的掺杂类型的非晶硅层形成。
而且,被称为“电钝化”层的中间层通常置于形成异质结的两个元件之间,以改进异质结的界面特性并因此改进转化效率。如在专利申请US2001/0029978中显示的,该中间层通常为本征非晶硅。
作为示例,图1示出了根据在先技术的光伏电池的特别的实施例,如在专利申请US2001/0029978中描述的。异质结光伏电池包含晶体硅基底1,例如n型掺杂的以及包括前表面1a的硅基底,该硅基底均匀地且接连地覆盖有:
本征非晶硅的层2,
非晶硅的层3,例如p型掺杂,以与基底1一起形成异质结,
例如由氧化铟锡(或ITO)制成的电极4,
以及梳形式的集电器5。
而且,基底1的前表面1a是有织构的(或结构化的),以增加电池的光学容量。
图1中,基底1的后表面1b是平的,且覆盖有电极6。然而,在其他的情况中,后表面1b可是有织构的并覆盖有如图2中所描绘的多层叠层。因此,在该实施例中,基底1的后表面1b均匀地且接连地覆盖有:
本征非晶硅的层7,
例如n型掺杂类型的、非常高度掺杂的非晶硅的层8,
例如由ITO制成的电极9,
以及梳形式的集电器10。
因此,如图1和2中所示,异质结光伏电池需要多个非常精细的层(大约从几个纳米至几十个纳米)在基底上的均匀沉积,基底的至少一个表面可有利地具有织构。薄层的均匀沉积、有时也称为薄层的保形沉积指的是为了跟随薄层所沉积的表面的起伏,沉积具有实质上固定的厚度的薄层。
然而,几乎总是需要的使基底的至少一个表面具有织构的步骤,不会有助于这些层的良好均匀分布。特别是,使具有织构的步骤引起生长面的显著增加。而且,在光伏电池领域,通常使基底的至少一个表面具有角锥形式的结构。然而,获得的角锥的边经常是非常粗糙的,且角锥的峰和谷是陡峭的(通常曲率半径低于30nm),这对接连沉积在具有织构的表面的层的完全均匀的厚度是有害的。作为示例,专利申请US2001/0029978提出了执行使用氢氟酸(HF)和硝酸溶液的各向同性的湿法蚀刻,以倒圆两个角锥之间的区域“b”。然而,该大约2μm或更多的蚀刻太多了,且在纳米尺度级使角锥的边变得平滑是不可能的。
此外,使具有织构的步骤,与清洁步骤,蚀刻步骤和在沉积之前的等待时间一起可产生基底的具有织构的表面的(微粒的和/或金属的)表面污染,这引起具有织构的基底的表面的态密度的显著增加。因此,这些污染的问题对表面的良好钝化是有害的,并且因此对高产量是有害的,尽管使用了本征非晶硅的过渡(transition)层作为钝化层。
在J.Sritharathiikhun等的“用于高效率p型氢化微晶氧化硅/n型晶体硅异质结太阳能电池的非晶氧化硅缓冲层的优化(Optimization of AmorphousSilicon Oxide Buffer Layer for High-Efficiency p-Type HydrogenatedMicrocrystalline Silicon Oxide/n-type Crystalline Silicon Heterojunction SolarCell)”(Japanese Newspaper of Applied Physics,47卷,N°11,2008,pp8452-8455)的文章中,提出了在n-型掺杂晶体硅基底(n-a-Si:H)和p-型掺杂微晶氧化硅(p-μc-SiO:H)的层之间使用本征非晶氧化硅(i-a-SiO:H)的表面钝化层。这种钝化层通过甚高频率等离子体增强化学气相沉积(VHF-PECVD)的技术沉积。而且,这种层的最佳厚度为6nm。然而,这种钝化层的制造引起在n-型掺杂晶体硅基底和所述钝化层之间的界面处形成许多缺陷。
发明内容
本发明的目标是提出具有良好表面钝化的异质结光伏电池,且该异质结光伏电池易于实现。
根据本发明,该目标通过以下事实实现:异质结光伏电池包括具有指定掺杂类型的晶体硅基底和非晶或微晶硅的层,其特征在于其包含至少一个晶体氧化硅薄膜,该薄膜直接沉积在基底的表面上,在所述基底和所述非晶或微晶硅的层之间。
根据本发明的改进,晶体氧化硅薄膜由通过基团氧化获得的基底的表面部分组成。
根据另一改进,晶体氧化硅薄膜具有低于或等于2纳米的厚度。
根据本发明,该目标也通过以下事实实现:在非晶或微晶硅的层形成之前,晶体氧化硅薄膜通过基底的表面的基团表面氧化实现。
附图说明
由作为非限制性的示例给出的并在附加图中描述的本发明的具体实施例的以下描述,更清楚地得到其他的优点和特性。其中:
图1以示意和截面的视图描述了根据在先技术的光伏电池的特别的实施例;
图2以示意和截面的视图描述了根据图1的光伏电池的替代的实施例;
图3至9示出了根据本发明的光伏电池的各种实施例。
具体实施方式
根据图3的光伏电池具有实质上与图1中描述的光伏电池的多层叠层类似的多层叠层。然而,在图3中,晶体氧化硅薄膜11被沉积于晶体硅基底1和本征非晶硅的薄层2之间。
由薄膜11、本征非晶硅的薄层2、p型掺杂的非晶硅的层3、电极4和集电器5形成的单元然后构成布置在基底1的前表面1a上,并在图3中被标记为A1的多层叠层。
更特别地,薄膜11直接布置在n型掺杂的晶体硅的基底1的前表面1a上,在所述基底1和本征非晶硅的层2之间。从而,该薄膜11与基底1的前表面1a直接接触。而且有利地,该薄膜11具有低于或等于2纳米的厚度,且依然有利的是具有0.1nm和2nm之间、以及典型地大约0.5nm的厚度。
更特别地,薄膜11是通过在叠层A1的接连的薄层2、3、4和5形成之前氧化基底1的表面部分的硅而获得的薄膜。基底1的表面部分指的是由基底1的自由表面延伸至内部的基底1的区域,其具有非常低的厚度(有利的是低于2nm)。而且,薄膜11由晶体氧化硅(即晶体形式的氧化物)制成。特别地,假定在某些的情况中氧化硅的晶体形式可为用于具有晶面(100)的硅基底的鳞石英形式。
而且,所述氧化为基团表面氧化,即借由基团(或自由基)进行的氧化。特别地,这样的基团为氧化基团,例如由氧、臭氧和/或水得到的。
因此获得的基团然后氧化基底1的表面部分上的硅。而且,因此在基团氧化过程中获得的氧化硅至少部分为晶体形式。更特别地,硅基底的基团表面氧化被有利地控制,以致在硅基底的表面上形成所述薄的晶体膜。然而,在某些的情况中,基底的基团表面氧化可涉及在晶体氧化硅上附加地形成非晶形式的氧化硅。然而,形成薄膜11的晶体氧化硅保持插入基底11和非晶氧化硅之间。而且,在基团表面氧化期间有利地形成的非晶氧化硅可在中间步骤期间通过剥离被移除,该中间步骤接着基团表面氧化,并且更特别地是在叠层A1的其他层形成之前。
有利地,氧化由等离子体辅助或由对将被氧化的基底的表面施加紫外辐射辅助。特别地,等离子体或紫外辐射的处理促进用于氧化基底1的硅的自由基的形成。更特别地,根据处理的类型,自由基为O·、O2 ·和/或OH·类型的基团,并特别地由氧和/或臭氧和/或水获得。
根据特别的实施例,基底1的表面部分的氧化可由氧以及具有范围在160nm和400nm之间的波长的紫外辐射实现。使用的紫外辐射的波长,例如为大约185nm和大约254nm。在该特别的实施例中,在紫外辐射的作用下,氧分离为自由基O·和臭氧。自由基可氧化硅表面。
而且,在氧化操作期间的温度可被包含在环境温度和大约900℃之间,同时压强可被包含在大约10-4和大约105Pa之间。然而,有利的是,温度和压强分别为环境温度和环境压强。
一旦薄膜11形成,用于制造至少一个光伏电池的方法继续到薄层的接连沉积。特别地,在图3中描述的实施例中,薄膜11的形成之后直接接着以下的接连沉积:
本征非晶硅的薄层2的沉积,
p型掺杂的非晶硅的薄层3至所述薄膜11上的沉积,
电极4至薄层3上的沉积,
集电器5至电极4上的沉积,
以及电极6至基底1的后表面1b上的沉积。
如上所述,可在所述薄层的接连沉积之前执行移除可能在基团氧化的操作期间形成在薄膜11上的非晶氧化硅的中间步骤。
因此,注意到,在基底1的表面中的一个上的晶体氧化硅薄膜的出现,以及特别是通过基团氧化来获得该薄膜时,使得可以获得重要的钝化特性,晶体氧化硅具有非常好的本征性质。因此,这样的晶体氧化硅薄膜使得可以防止电荷载流子在复合时被俘获。因此,晶体氧化硅薄膜通过确保基底1的表面钝化而扮演隧道氧化层的角色。因此,可以增加光伏电池的开路电压,以及潜在地放大短路电流,以及改变电池的形状因子而不降低输出。
而且,这使得可以有助于制造一个或更多的光伏电池的方法。毫无疑问地,因此覆盖有氧化物薄膜的基底1的表面在较长时间内是稳定的,使得可以在执行制造方法的后续步骤(其他薄层的沉积)之前,增加可能的等待时间。而且,在某些的情况中以及根据清洁条件,不需要在形成晶体氧化硅薄膜之前移除基底1的表面上的原生氧化物。在某些的条件下,在基团氧化的步骤期间,可将原生氧化物转化为晶体形式。最终,制造至少一个晶体氧化硅薄膜作为钝化层的事实使得可以在工艺中在沉积本征非晶硅之前没有利用氢氟酸清洁基底的步骤,这使得可以改进工艺安全性。
图3中,基底1的后表面1b是平的,并且如根据图1的实施例中所示,其覆盖有电极6。另一方面,如图4中所示,后表面1b可具有织构,并覆盖有如图2中描述的多层叠层,即均匀地以及连续地覆盖有:
本征非晶硅的层7,
例如n型掺杂的,非常重掺杂的非晶硅的层8,
例如由ITO制成的电极9,
以及梳形式的集电器10。
另外,在某些实施例中,附加的薄膜12可沉积至基底1的后表面1b上。
因此,根据替代的实施例和图5中所描述的,电池可包含覆盖有与图3和4中描述的多层叠层相同的多层叠层A1的前表面1a。另一方面,如同前表面1a,基底1的后表面1b具有织构,并且此外覆盖有附加的晶体氧化硅薄膜12。所述附加的薄膜12覆盖有多层叠层,该多层叠层由薄的本征非晶层7、n型掺杂非晶硅的薄层8、电极9和集电器10形成,该单元则形成覆盖基底1的后表面1b并在图5中标为B1的多层叠层。
在某些情况中,晶体氧化硅的非常良好的本征性质足够用于获得良好的表面钝化,并能消除对所述膜和掺杂的非晶硅的薄层之间的本征非晶硅的薄的钝化层2的需要。
然后,薄膜11可直接沉积在基底1和p型掺杂的非晶硅的层3之间。因此,在这些实施例中,可设想用多层叠层A2替换多层叠层A1,该多层叠层A2与多层叠层A1的不同之处在于薄膜11和p型掺杂的非晶硅的薄层3之间的本征硅的薄层2被取缔。这样的叠层A2则可与各实施例关联,该多个实施例是针对基底1的后表面1b的,如图6至9中所示。
因此,图6中,覆盖基底1的前表面1a的所述叠层A2与覆盖基底1的平的后表面1b的电极6关联。
图7中,后表面1b具有织构,如同基底1的前表面1a,并且后表面1b覆盖有如同图2中描述的多层叠层的多层叠层,即一种不包括附加的晶体氧化硅薄膜12的多层叠层。
图8中,基底1的后表面1b也具有织构,如同基底的前表面1a,并且后表面1b覆盖有多层叠层B1,即一种包括插入基底1和n型掺杂的非晶硅的薄层8之间的附加的薄膜12的叠层。
最后,在图9中,基底1的后表面1b也具有织构,如同基底的前表面1a,并且后表面1b覆盖有多层叠层B2。多层叠层B2与多层叠层B1的不同之处在于多层叠层B2不包括布置在附加的薄膜12和非晶硅的层8之间的本征非晶硅的层7。
当光伏电池包含布置在基底1的前表面1a上的薄膜11以及布置在基底1的后表面1b上的附加的薄膜12时,两个薄膜11和12可以同时的方式或接连的方式实现。
在两个薄膜11和12以接连的方式实现的情况中,光伏电池可有利地如下制成:
薄膜11、可能的本征非晶硅的薄层2和p型掺杂的非晶硅的层3接连地形成在基底1的前表面1a上,以用于形成异质结,
此后,附加的薄膜12、可能的本征非晶硅的薄层7和n型掺杂的非晶硅的层8接连地形成在基底1的后表面1b上,
以及最后,电极4和9,以及分别与所述电极4和9关联的集电器5和10形成在它们各自的叠层上。
有利地,两个薄膜11和12中的每一个通过基团氧化制成,借由诸如氧化基的自由基以及可能由等离子体处理或紫外辐射辅助。
根据另一个替代实施例,光伏电池也可包含仅一层晶体氧化硅薄膜,该晶体氧化硅薄膜不置于基底1的前表面1a上(图3、4、6和7的情况),而是在基底1的后表面1b上。晶体氧化硅薄膜总是有利地通过基团氧化制成,借由氧化的自由基以及可能由等离子体处理或紫外辐射辅助。在该情况中,前表面1a有利地被覆盖有布置在基底1和p型掺杂的非晶硅的薄层3之间的本征非晶硅的薄层2。后表面1b可(或可不)包含在晶体氧化硅薄膜和掺杂的非晶硅的层8之间的本征非晶硅的薄层7。
本发明不限于上面描述的实施例,特别是就基底1的掺杂类型(n或p)以及掺杂的非晶硅的层3和8而言。
因此,本发明不限于包括n型掺杂的晶体硅基底以及分别p型掺杂和n型掺杂的非晶硅的层3和8的实施例。为了形成异质结,非晶硅的层3必须具有与基底1的掺杂类型(n或p)相反的掺杂类型(p或n);并且布置在基底1的后表面1b一侧上的非晶硅的层8必须具有与基底1的掺杂类型(n或p)相同的掺杂类型(n或p)。
另外,薄层3和8除了由非晶硅制成,也可由微晶硅制成。
最后,取代使用本征非晶硅用于层2和7,可以使用具有与打算布置在所述层2或7上的非晶硅的层3或8的掺杂类型相同的掺杂类型的轻掺杂的、也被称为微掺杂的非晶硅。轻掺杂或微掺杂的非晶硅指的是实质上低于通常使用的掺杂水平的掺杂。因此,作为示例,每一个非晶硅的层2和7的掺杂剂的浓度可在1x1016和1x1018at/cm3之间,而每一个非晶硅的薄层3和8可具有在1x1019at/cm3和1x1022at/cm3之间的掺杂剂的浓度。
由于低掺杂水平,通过微掺杂的非晶硅代替本征非晶硅允许获得低的局部态密度,并因此获得在与基底的界面处的载流子的低复合率,以及高开路电压。而且,微掺杂的非晶层具有实质上比本征非晶层的电导高的电导,这减少了电池的串联电阻并实质上改进了电池的形状因子。
异质结光伏电池包含至少一个晶体氧化硅薄膜(11),该晶体氧化硅薄膜(11)直接置于晶体硅基底(1)的前或后表面(1a)的一个上,在所述基底(1)和非晶或微晶硅的层(3)之间。薄膜(11)用来确保基底(1)的所述表面(1a)的钝化。具体地,在沉积非晶硅的层(3)之前,薄膜(11)通过基团地氧化基底(1)的表面部分而获得。而且,本征或微掺杂的非晶硅的薄层(2)可置于所述薄膜(11)和非晶或微晶硅的层之间。
Claims (18)
1.包括具有指定掺杂类型的晶体硅基底(1)和非晶或微晶硅的层(3、8)的异质结光伏电池,其特征在于:所述异质结光伏电池包含至少一个晶体氧化硅薄膜(11),该晶体氧化硅薄膜(11)直接置于所述基底(1)的表面(1a、1b)上,在所述基底(1)和所述非晶或微晶硅的层(3、8)之间。
2.根据权利要求1所述的电池,其特征在于:所述晶体氧化硅薄膜(11)由通过基团氧化的所述基底(1)的表面部分构成。
3.根据权利要求1和2中任一项所述的电池,其特征在于:所述晶体氧化硅薄膜(11)具有低于或等于2纳米的厚度。
4.根据权利要求1至3中任一项所述的电池,其特征在于:本征或微掺杂的非晶硅的薄层(2、7)被插入所述晶体氧化硅薄膜(11)和所述非晶或微晶硅的层(3、8)之间。
5.根据权利要求1至3中任一项所述的电池,其特征在于:所述晶体氧化硅薄膜(11)与所述非晶或微晶硅的层(3、8)直接接触。
6.根据权利要求1至5中任一项所述的电池,其特征在于:所述非晶或微晶硅的层(8)的掺杂类型与所述晶体硅基底(1)的掺杂类型相同。
7.根据权利要求1至5中任一项所述的电池,其特征在于:所述非晶或微晶硅的层(3)的掺杂类型与所述晶体硅基底(1)的掺杂类型相反。
8.根据权利要求7所述的电池,其特征在于:所述电池包含附加的晶体氧化硅薄膜(12),该附加的晶体氧化硅薄膜(12)直接布置在所述基底(1)的另一表面(1b)上,在所述基底(1)和附加的非晶或微晶硅的层(8)之间,所述附加的非晶或微晶硅的层(8)的掺杂类型与所述晶体硅基底(1)的掺杂类型相同。
9.根据权利要求8所述的电池,其特征在于:附加的本征或微掺杂的非晶硅的薄层(7)被插入所述附加的晶体氧化硅薄膜(12)和所述附加的非晶或微晶硅的层(8)之间。
10.根据权利要求8所述的电池,其特征在于:所述附加的晶体氧化硅薄膜(12)与所述附加的非晶或微晶硅的层(8)直接接触。
11.根据权利要求1至10中任一项所述的电池,其特征在于:所述晶体硅基底(1)的至少一个表面(1a、1b)是有织构的。
12.根据权利要求1至11中任一项所述的电池,其特征在于:非晶氧化硅的层直接布置在所述晶体氧化硅薄膜(11、12)上,在所述薄膜和所述非晶或微晶硅的层(3、8)之间。
13.用于制造至少一个根据权利要求1至12中任一项所述的光伏电池的方法,其特征在于:在所述非晶或微晶硅的层(3、8)的形成之前,所述晶体氧化硅薄膜(11、12)通过所述基底(1)的表面的基团表面氧化而制成。
14.根据权利要求13所述的方法,其特征在于:所述基团表面氧化依靠从氧和/或臭氧和/或水获得的氧化基进行。
15.根据权利要求14所述的方法,其特征在于:所述基底(1)的表面的所述表面氧化借助于对所述表面施加紫外辐射。
16.根据权利要求15所述的方法,其特征在于:至少从氧获得所述氧化基,所述紫外辐射具有范围在160nm和400nm之间的波长。
17.根据权利要求13和14中任一项所述的方法,其特征在于:所述基底(1)的表面的所述表面氧化由等离子体辅助。
18.根据权利要求13至17中任一项所述的方法,其特征在于:所述基底(1)的表面的所述基团表面氧化的后面为剥离步骤,以移除在基团表面氧化过程中在所述薄膜(11、12)的表面上形成的非晶形式的氧化硅的一部分。
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WO2022242067A1 (zh) * | 2021-05-18 | 2022-11-24 | 横店集团东磁股份有限公司 | 一种perc电池背钝化结构、perc电池及制备方法 |
CN113937192A (zh) * | 2021-07-30 | 2022-01-14 | 国家电投集团科学技术研究院有限公司 | 硅异质结太阳电池非晶硅钝化层的制备方法 |
Also Published As
Publication number | Publication date |
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WO2011092402A3 (fr) | 2012-08-30 |
WO2011092402A2 (fr) | 2011-08-04 |
FR2955702A1 (fr) | 2011-07-29 |
FR2955702B1 (fr) | 2012-01-27 |
ES2560216T3 (es) | 2016-02-17 |
CN102770972B (zh) | 2016-03-23 |
EP2529416B1 (fr) | 2015-10-21 |
US20120291861A1 (en) | 2012-11-22 |
KR20120127613A (ko) | 2012-11-22 |
JP2013518426A (ja) | 2013-05-20 |
JP2016006895A (ja) | 2016-01-14 |
EP2529416A2 (fr) | 2012-12-05 |
US10276738B2 (en) | 2019-04-30 |
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