JP2016006895A - 結晶酸化シリコンパッシベーション薄膜を含む太陽電池及びその製造方法 - Google Patents
結晶酸化シリコンパッシベーション薄膜を含む太陽電池及びその製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 62
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000002161 passivation Methods 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 78
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】ヘテロジャンクション太陽電池は、結晶シリコン基板1の正面又は背面1aのいずれかに直接配置され、且つ、基板とアモルファス又は微結晶のシリコンの層3との間に配置される結晶酸化シリコン薄膜11を少なくとも1つ備える。薄膜11は、基板の面1aのパッシベーションとなることができる。特に、薄膜は、アモルファスシリコンの層3の堆積の前に、基板の表面部分をラジカル酸化することにより得られる。さらに、真性アモルファスシリコン又は微量ドーピングされたアモルファスシリコンの薄層2は、薄膜11とアモルファス又は微結晶シリコンの層との間に配置することができる。
【選択図】図3
Description
− 真性アモルファスシリコンの層2と、
− アモルファスシリコンの層3であって、例えば、基板1とヘテロジャンクションを形成するために例えばp型にドーピングされているようなアモルファスシリコンの層と、 − 電極4であって、例えば酸化インジウムスズ(ITO)からなる電極と、
− 櫛型状の電流コレクタ5と。
− 真性アモルファスシリコンの層7と、
− 強くドーピングされた(very strongly doped)アモルファスシリコンの層8であって、例えば、n型にドープされている層と、
− 電極9であって、例えばITOからなる電極と、
− 櫛型状の電流コレクタ10と。
− 真性アモルファスシリコンの薄層2を堆積し、
− 前記薄膜11の上にp型にドーピングされたアモルファスシリコンの薄層3を堆積し、
− 薄層3の上に電極4を堆積し、
− 電極4の上に電流コレクタ5を堆積し、
− 基板1の背面1b上に電極6を堆積する。
− 真性アモルファスシリコンの層7と、
− 非常に強くドーピングされたアモルファスシリコンの層8であって、例えばn型にドーピングされた層と、
− 例えばITOからなる電極9と、
− 櫛形状の電流コレクタ10と。
− 基板1の正面1aの上に、薄膜11と、可能であれば真性アモルファスシリコンの薄層2と、p型にドーピングされたアモルファスシリコンの層3とを連続的に形成して、ヘテロジャンクションを形成し、
− 次いで、基板1の背面1bの上に、付加薄膜12と、可能であれば真性アモルファスシリコンの薄層7と、n型にドーピングされたアモルファスシリコンの層8とを連続的に形成し、
− 最後に、電極4と9と、電極4と9とにそれぞれ対応する電流コレクタ5と10とを、これらのスタックの上にそれぞれ形成する。
Claims (18)
- 所定のタイプのドーピングを有する結晶シリコン基板(1)と、アモルファス又は微結晶のシリコンの層(3、8)とを有するヘテロジャンクション太陽電池であって、結晶酸化シリコン薄膜(11)を少なくとも1つ備え、前記結晶酸化シリコン薄膜(11)は、前記基板(1)と前記アモルファス又は微結晶のシリコンの層(3、8)との間であって、前記基板(1)の面(1a、1b)の上に直接配置されている、ことを特徴とする電池。
- 前記結晶酸化シリコン薄膜(11)は、ラジカルにより酸化された前記基板(1)の表面部分により構成される、ことを特徴とする請求項1に記載の電池。
- 前記結晶酸化シリコン薄膜(11)は、2ナノメートル以下の膜厚を有する、ことを特徴とする請求項1又は2に記載の電池。
- 真性アモルファスシリコン又は微量ドーピングされたアモルファスシリコンの薄層(2、7)は、前記結晶酸化シリコン薄膜(11)と前記アモルファス又は微結晶のシリコンの層(3、8)との間に挿入される、ことを特徴とする請求項1から3のいずれか1つに記載の電池。
- 前記結晶酸化シリコン薄膜(11)は、前記アモルファス又は微結晶のシリコンの層(3、8)に直接接している、ことを特徴とする請求項1から3のいずれか1つに記載の電池。
- 前記アモルファス又は微結晶のシリコンの層(8)は、前記結晶シリコン基板(1)と同じタイプのドーピングを有する、ことを特徴とする請求項1から5のいずれか1つに記載の電池。
- 前記アモルファス又は微結晶のシリコンの層(3)は、前記結晶シリコン基板(1)と反対のタイプのドーピングを有する、ことを特徴とする請求項1から5のいずれか1つに記載の電池。
- 結晶酸化シリコン付加薄膜(12)を備え、前記結晶酸化シリコン付加薄膜(12)は、前記基板(1)とアモルファス又は微結晶のシリコンの付加層(8)との間であって前記基板(1)の他の面(1b)の上に直接配置され、前記アモルファス又は微結晶のシリコンの付加層(8)は、前記結晶シリコン基板(1)と同じタイプのドーピングを有する、ことを特徴とする請求項7に記載の電池。
- 真性アモルファスシリコン又は微量ドーピングされたアモルファスシリコンの付加薄層(7)は、前記結晶酸化シリコン付加薄膜(12)と前記アモルファス又は微結晶のシリコンの付加層(8)との間に挿入される、ことを特徴とする請求項8に記載の電池。
- 前記結晶酸化シリコン付加薄膜(12)は、前記アモルファス又は微結晶のシリコンの付加層(8)に直接接している、ことを特徴とする請求項8に記載の電池。
- 前記結晶シリコン基板(1)の少なくとも1つの面(1a、1b)は凹凸状である、ことを特徴とする請求項1から10のいずれか1つに記載の電池。
- アモルファス酸化シリコンの層は、前記結晶酸化シリコン薄膜と前記アモルファス又は微結晶のシリコンの層(3,8)との間であって、前記結晶酸化シリコン薄膜(11、12)の上に直接配置される、ことを特徴とする請求項1から11のいずれか1つに記載の電池。
- 請求項1から12のいずれか1つに記載の太陽電池を少なくとも1つ製造する製造方法であって、前記アモルファス又は微結晶のシリコンの層(3、8)を形成する前に、前記基板(1)の表面をラジカル表面酸化することにより前記結晶酸化シリコン薄膜(11、12)を形成する、ことを特徴とする方法。
- 前記ラジカル表面酸化は、酸素、及び/又は、オゾン、及び/又は、水から得られた酸素化ラジカルを用いて行われる、ことを特徴とする請求項13に記載の方法。
- 前記基板(1)の表面の前記表面酸化は、前記表面に紫外線を照射することにより支援される、ことを特徴とする請求項14に記載の方法。
- 前記酸化ラジカルは少なくとも酸素から得られ、前記紫外線は160nmから400nmの間の波長を有する、ことを特徴とする請求項15に記載の方法。
- 前記基板(1)の表面の前記表面酸化はプラズマにより支援される、ことを特徴とする請求項13又は14に記載の方法。
- 前記基板(1)の表面の前記ラジカル表面酸化に続いて、ラジカル表面酸化の間に前記薄膜(11、12)の表面の上に形成されたアモルファス中にある酸化シリコンの一部を除去するためのストリッピングステップを行う、ことを特徴とする請求項13から17のいずれか1つに記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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FR1000309 | 2010-01-27 | ||
FR1000309A FR2955702B1 (fr) | 2010-01-27 | 2010-01-27 | Cellule photovoltaique comprenant un film mince de passivation en oxyde cristallin de silicium et procede de realisation |
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JP2020505766A (ja) * | 2017-01-17 | 2020-02-20 | ツェットエフ、フリードリッヒスハーフェン、アクチエンゲゼルシャフトZf Friedrichshafen Ag | 炭化珪素上に絶縁層を製造する方法 |
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KR20120127613A (ko) | 2012-11-22 |
ES2560216T3 (es) | 2016-02-17 |
WO2011092402A3 (fr) | 2012-08-30 |
CN102770972A (zh) | 2012-11-07 |
FR2955702A1 (fr) | 2011-07-29 |
US20120291861A1 (en) | 2012-11-22 |
CN102770972B (zh) | 2016-03-23 |
WO2011092402A2 (fr) | 2011-08-04 |
EP2529416A2 (fr) | 2012-12-05 |
US10276738B2 (en) | 2019-04-30 |
EP2529416B1 (fr) | 2015-10-21 |
JP2013518426A (ja) | 2013-05-20 |
FR2955702B1 (fr) | 2012-01-27 |
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