JP2009535845A - ドーピングされた半導体ヘテロ接合電極を有する太陽電池 - Google Patents

ドーピングされた半導体ヘテロ接合電極を有する太陽電池 Download PDF

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JP2009535845A
JP2009535845A JP2009509552A JP2009509552A JP2009535845A JP 2009535845 A JP2009535845 A JP 2009535845A JP 2009509552 A JP2009509552 A JP 2009509552A JP 2009509552 A JP2009509552 A JP 2009509552A JP 2009535845 A JP2009535845 A JP 2009535845A
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カズンズ，ピーター，ジョン
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サンパワー コーポレイション
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Abstract

シリコン太陽電池は、シリコン基板の表面におけるトンネルシリコン酸化物層上に形成されたドープドアモルファスシリコン電極を有する。太陽電池の製造において、高温処理が不要である。
【選択図】図１

Description

発明の背景
本発明は概して、太陽光電池に関し、より具体的には本発明は、動作が効率的で、且つ製造が経済的な太陽電池構造に関する。
太陽放射を電気エネルギーに直接的に変換するための光電池（太陽電池）の使用は、例えば、Swansonによる米国特許第４，２３４，３５２号のように良く知られている。簡単に言うと、光電池は、内部に画定されたｐ−ｎ接合を有する半導体材料の基板からなる。平面シリコンのセル（cell：太陽電池）において、入射する放射線を受け取る基板の表面近くに、ｐ−ｎ接合が形成される。放射された光子が可動キャリヤ（正孔と電子）を生成し、基板がそれらをセルの外側の電気回路に送ることができる。少なくとも最小エネルギーレベル（例えば、シリコンの場合、１．１電子ボルト）有する光子だけが、半導体対において電子正孔対を生成することができる。より少ないエネルギーを有する光子は、吸収されないか、又は熱として吸収され、１．１電子ボルトのエネルギーよりも多い超過エネルギーを有する光子（例えば、１．１μｍ及びそれ未満の波長を有する光子）は、熱を生成する。これら及び他の損失は、太陽エネルギーの電気への直接的な変換において、シリコン光電池の効率を３０％未満に制限する。
セルの背面に反対の極性の互いにかみ合う（相互嵌合）電極を有する太陽電池が、知られており、前側金属グリッド及びブランケット、又はグリッド金属化裏面電極を有する従来の太陽電池に比べて多くの利点を有し、係る利点には、前面グリッドの遮光を取り除いたことによる改善された光生成、より低減されたグリッドの直列抵抗、及び前面電極（コンタクト）が存在しないことから、前面の高濃度ドーピングが前面電極の抵抗を最小限にする必要がないという理由による改善された「青色」の光応答が含まれる。性能の利点に加えて、裏面電極のセル構造により、共平面電極に起因して簡略化されたモジュールアセンブリが可能になる。例えば、Swansonによる米国特許第４，９２７，７７０号を参照されたい。
相互嵌合裏面電極（interdigitated back contact：IBC）の太陽電池が製造されたが、コスト的検討によってＩＢＣ太陽電池の商品化が制限されていた。これまで、裏面拡散、従来のマイクロエレクトロニクスのフォトリソグラフィにより製造された電極および金属線、薄膜メタライゼーション、及びエッチングプロセスの使用を含む、従来のマイクロエレクトロニクス（集積回路）の処理は、ＩＢＣ太陽電池の製造に利用されてきた。この製造プロセスは、高い効率の太陽電池を製造することができるが、そのプロセスは、従来の低コストな平板型太陽電池パネルの応用形態に対して費用効率が悪い。このプロセスによるＩＢＣ太陽電池の実用化に伴う重要課題は、エッチング、ドーピング、及びマスクアライメント、並びに真空蒸着またはスパッタリングによる厚い金属導体の堆積の使用を含む、製造に関する高いコストである。更に、処理は、クリーンルーム環境で実行されなければならない。従って、これらの方法を用いて製造されるＩＢＣ太陽電池は、高集積の太陽電池の用途または非常に高価な１つの太陽の応用形態（one-sun applications）に限定されていた。
米国同時係属出願第１１／３０６，５１０号は、半導体基板をアクセプタ及びドナーのポリマー電極と結合し、経済的に製造される太陽電池を提供する。重要な点は、太陽電池の製造が、コストにおいて改善され、従来技術の太陽電池で必要とされたようなフォトレジストのマスキング、エッチング、及びドーパントの拡散とアニーリングを必要とせずに、ポリマー電極のインクジェットの応用形態を使用することによる低減された温度サイクルにおいて改善される。
本発明は、容易に且つコスト効率良く製造され得るシリコン太陽電池において、ドナー電極およびアクセプタ電極としてアモルファスシリコンのような半導体を利用する。
発明の概要
本発明は、シリコン太陽電池においてドナー電極またはアクセプタ電極として、ドーピングされた（ドープド）アモルファスシリコン、Ｓｉ−Ｇｅ、又はIII−Ｖ族化合物を利用する。電極の材料は、ドナー又はアクセプタの応用形態の必要に応じて、ドーパントと共に堆積される蒸気とすることができる。本明細書で使用される場合、「アモルファス」シリコンは、「多結晶」シリコンを含む。
単結晶シリコン基板に堆積される場合、最初にトンネル酸化物が成長されて、堆積されたアモルファスシリコンを基板から分離し、アモルファスシリコンの再結晶化を防止する。
相互嵌合裏面電極（interdigitated back contact：IBC）のセルにおいて、前面は、化学的アブレーションまたは物理的アブレーションによりテクスチャード加工されて、窒化ケイ素、ドーピングされた（ドープド）炭化ケイ素のような反射防止保護膜、又はアモルファスシリコンの薄い膜を有する放射線捕獲表面をテクスチャード加工された表面上に提供することができる。
本発明および本発明の目的と利点は、図面に関連して参酌された場合に、以下の詳細な説明および添付の特許請求の範囲からより容易に明らかになるであろう。
好適な実施形態に関する詳細な説明
本発明の一実施形態に従って、第１と第２の対向する主面を有するシリコン半導体の本体からなる相互嵌合裏面電極（interdigitated back contact：IBC）太陽電池は、第１の表面を通じて放射線を受け取り、放射された光子によりシリコン基板に生成された電子と正孔のキャリヤを受け取るために、第２の表面、即ち裏面に、それぞれドーピングされた（ドープド）アモルファスシリコンのアクセプタとドープドアモルファスシリコンのドナーの第１と第２のパターンを有する。構造体は、放射線により生成された正孔と電子を受け取るために基板に形成されたドープドＰ型およびＮ型導電性電極を利用する従来技術の裏面電極太陽電池に類似する。しかしながら、基板にドープドＰ型およびＮ型電極を使用することは、太陽電池の製造において、フォトレジストマスキング、エッチング、ドーパント拡散、及び高温処理を必要とする。本発明の一実施形態に従って、基板にアクセプタ及びドナーアモルファスシリコン電極を使用することにより、フォトレジストマスキング及びドーパント拡散、並びに拡散されたドーパントをアニーリングする際に必要な高温処理の必要性が無くなる。トンネルシリコン酸化物が、電極と基板との間に配置されて、基板上のアモルファスシリコンのエピタキシャル成長が防止され得る。
ここで、図１を検討すると、図１は、本発明の一実施形態による相互嵌合裏面電極（ＩＢＣ）太陽電池の断面の側面図である。セルは、放射線を受け取る前面、及びテクスチャード加工された表面を有するライトＮ型単結晶または多結晶基板１０を含み、そのテクスチャード加工された表面には、薄い（例えば、１〜１５ｎｍ（１０〜１５０オングストローム））トンネルシリコン酸化物層１２が形成され、窒化ケイ素、ドープド炭化ケイ素、又はドープドアモルファスシリコン層からなることができるパッシベーション（保護）膜１４が、トンネル酸化物１２上にある。
基板１０の裏面に、第２のトンネル酸化物層１６があり、その上にＰ＋アモルファスシリコン電極１８が形成されている。酸化ケイ素２０のような誘電体が、Ｎ＋アモルファスシリコン２２からＰ＋アモルファスシリコン１８を分離し、Ｎ＋アモルファスシリコン２２は、Ｐ＋アモルファスシリコン層１８を貫通する開口内に形成され、トンネル酸化物１６と接触する。アモルファスシリコン層１８、２２は低温蒸着により形成されるが、トンネル酸化物１６がシリコン基板１０からのエピタキシャル成長によるアモルファスシリコンの任意の再結晶化を防止する。金属電極２４がＰ＋アモルファスシリコン層１８に係合し、金属電極２６がＮ＋アモルファスシリコン層２２に係合する。
裏面電極ヘテロ接合は、トンネル酸化物１６を包含させることによる太陽電池の背面パッシベーション、アモルファスシリコン電極により提供されるヘテロ接合領域、及び電極のパッシベーションを強化する。以下で更に説明されるように、デバイスを製作する際のプロセスの利点は、高温でドーパントを打ち込む必要が無い点である。
図２Ａ〜図２Ｄは、製造中の図１の太陽電池を示す断面図である。最初に、図２Ａに示されるように、真性またはライトドープされたものとすることができるシリコン基板１０は、その上に成長された薄いトンネル酸化物１６を有し、そのトンネル酸化物１６は例えば、１〜２ｎｍ（１０〜２０オングストローム）の厚みを有することができる。次いで、アモルファスシリコン層１８が、ホウ素のドーパントと共に、１０２０〜１０２１又は１０Ｅ２０〜１０Ｅ２１原子／ｃｍ３のドーパント濃度で５０ｎｍから２００ｎｍ（５００〜２０００オングストローム）の厚みまで堆積される。蒸着によるドープドシリコン層の成長は、既知のシリコンプロセスである。ＰＩＮ構造が望ましい場合には、Ｐ型ドープドシリコン層の下に真性層を含めるように形成され得る。
その後、酸化ケイ素の絶縁層２０が、低圧化学蒸着（ＬＰＣＶＤ、ＰＥＣＶＤ、ＡＰＣＶＤ）により、又はスピンオンガラスのプロセスにより堆積される。酸化ケイ素層１６は、この例示的な実施形態において、５０〜１００ｎｍ（５００〜１０００オングストローム）である。
その後、図２Ｂに示されるように、基板１０の前面は、化学的アブレーションまたは機械的アブレーションによりテクスチャード加工される。このプロセス工程は、必要に応じて、図２Ａのプロセス工程に先行することができる。次いで、フォトレジストマスクが基板１０の裏面に形成され、基板１０まで酸化ケイ素層２０とアモルファスシリコン１８を貫通する開口を形成するためにエッチングされる。また、薄いトンネル酸化物も、エッチングプロセスで除去され、次いでトンネルシリコン酸化物の新たな層が、エッチングされた開口を介して、化学成長により基板１０の露出した表面に付着される。図２Ｂのトンネル酸化物１６の形成において、トンネル酸化物層１２は、前面に同時に形成され得る。エッチングされた開口において、再び１〜２ｎｍ（１０〜２０オングストローム）の厚みまで薄いトンネル酸化物を成長させた後、図２Ｃに示されるように、Ｎ＋ドープドアモルファスシリコン層２２が裏面の上に堆積される。
層２２は、１０２０〜１０２１又は１０Ｅ２０〜１０Ｅ２１原子／ｃｍ３の濃度でリンのようなＮ型ドーパントでドーピングされる。これは、プラズマ化学気相成長法（ＰＥＣＶＤ、ＬＰＣＶＤ、ＡＰＣＶＤ）を用いて堆積され得る。次いで、Ｎ＋アモルファスシリコン２２がマスキングされて選択的にエッチングされ、金属電極を受容するために、下にあるＰ＋アモルファスシリコン１８を露出する。図２Ｄにおいて、金属電極２４と２６は、金属堆積ならびにフォトレジストマスキング及びエッチングにより、Ｐ＋アモルファスシリコン１８及びＮ＋アモルファスシリコン２２に形成される。電極は、アルミニウム又は銅のような導電性金属のシード（seed：種）層を最初にまき散らし（scattering）、厚みを増すようにシード金属をパターンめっきすることにより形成され得る。次いで、セルは、窒化ケイ素、ドープド炭化ケイ素、又はＮ＋ドープドアモルファスシリコンを用いて、基板１０の前面におけるトンネル酸化物１２上に保護（パッシベーション）層１４を堆積することにより完成する。
本発明による、ドープドアモルファスシリコン電極を用いるヘテロ接合太陽電池は、高温処理を必要とせずに、従来の半導体処理技術を用いて容易に製造される。本発明は、Ｐ＋電極およびＮ＋電極の双方を利用する相互嵌合裏面電極太陽電池に関連して説明されてきたが、本発明は、裏面に単一のドープドアモルファスシリコンを有する太陽電池に適用され得る。更に、ヘテロ接合がアモルファスシリコンにより提供されるが、ゲルマニウム−シリコン合金、ドープド炭化ケイ素、又はIII−Ｖ族化合物材料のような他の高いバンドギャップの材料が、電極構造に利用されてもよい。従って、本発明は特定の実施形態に関連して説明されてきたが、その説明は本発明の例示であり、本発明を制限するものとして解釈されるべきではない。様々な修正形態および応用形態が、添付の特許請求の範囲により定義されるような本発明の思想および範囲から逸脱せずに、当業者に想起され得る。
本発明の一実施形態による、ドーピングされたアモルファス電極を含む相互嵌合裏面電極太陽電池の断面の側面図である。 製造中の図１の太陽電池を示す断面の側面図である。 製造中の図１の太陽電池を示す断面の側面図である。 製造中の図１の太陽電池を示す断面の側面図である。 製造中の図１の太陽電池を示す断面の側面図である。

Claims (26)

  1. ａ）第１及び第２の対向する主面を有する半導体の本体と、
    ｂ）前記第１の表面上の第１の誘電体層、及び前記第２の表面上にあり、トンネル酸化物からなる第２の誘電体層と、
    ｃ）前記第２の表面における前記トンネル酸化物上の第１のパターンのアクセプタドープド半導体材料、及び前記第２の表面における前記トンネル酸化物上にあり、前記第１のパターンと交互配置されている第２のパターンのドナードープド半導体材料と、
    ｄ）前記アクセプタドープド半導体材料を相互接続する第１の導電性パターン、及び前記ドナードープド半導体材料を相互接続する第２の導電性パターンとを含む、太陽電池。
  2. 前記半導体材料が、アモルファスシリコン、シリコン−ゲルマニム、及びIII−Ｖ族化合物半導体からなるグループから選択される、請求項１に記載の太陽電池。
  3. 前記半導体材料が、アモルファスシリコンからなる、請求項２に記載の太陽電池。
  4. 前記アクセプタドープドアモルファスシリコンが、ホウ素をドーピングされている、請求項３に記載の太陽電池。
  5. 前記ドナードープドアモルファスシリコンが、リンをドーピングされている、請求項４に記載の太陽電池。
  6. 前記第１の主面がテクスチャード加工されている、請求項５に記載の太陽電池。
  7. 前記半導体の本体が、シリコンからなり、前記トンネル酸化物が酸化ケイ素からなる、請求項６に記載の太陽電池。
  8. 前記第１及び第２の導電性パターンが、アルミニウム及び銅からなるグループから選択される、請求項７に記載の太陽電池。
  9. 前記半導体の本体がシリコンからなり、前記トンネル酸化物が酸化ケイ素からなる、請求項３に記載の太陽電池。
  10. 前記第１及び第２の導電性パターンが、アルミニウム及び銅からなるグループから選択される、請求項９に記載の太陽電池。
  11. 放射線の入射により、可動キャリヤがシリコン基板に生成され得る太陽電池において、可動キャリヤを受け取るための電極が、前記基板の表面上のトンネル酸化物、及び前記トンネル酸化物上のドープド半導体材料層を含む、電極。
  12. 前記半導体材料が、アモルファスシリコン、シリコン−ゲルマニム、及びIII−Ｖ族化合物半導体からなるグループから選択される、請求項１１に記載の電極。
  13. 前記半導体材料が、アモルファスシリコンからなる、請求項１２に記載の電極。
  14. 前記トンネル酸化物が酸化ケイ素からなる、請求項１３に記載の電極。
  15. 前記酸化ケイ素が、１〜２ｎｍ（１０〜２０オングストローム）の範囲内の厚みを有する、請求項１４に記載の電極。
  16. 前記アモルファスシリコンが、ドナードーパントでドーピングされている、請求項１４に記載の電極。
  17. 前記ドナードーパントがリンである、請求項１６に記載の電極。
  18. 前記アモルファスシリコンが、アクセプタドーパントでドーピングされている、請求項１４に記載の電極。
  19. 前記アクセプタドーパントがホウ素である、請求項１８に記載の電極。
  20. シリコン太陽電池を製造する方法において、キャリヤアクセプタ電極を製造するステップが、
    ａ）第１及び第２の対向する主面を有するシリコン基板を準備し、
    ｂ）前記第１の主面上にトンネルシリコン酸化物層を形成し、
    ｃ）前記トンネルシリコン酸化物上にドープドアモルファスシリコン層を形成することを含む、方法。
  21. 前記ドープドアモルファスシリコンが、１０１９原子／ｃｍ３を超えるドーパントを有する、請求項２０に記載の方法。
  22. 前記ドーパントがドナードーパントである、請求項２１に記載の方法。
  23. 前記ドーパントがリンからなる、請求項２２に記載の方法。
  24. 前記ドーパントがアクセプタドーパントである、請求項２１に記載の方法。
  25. 前記ドーパントがホウ素からなる、請求項２４に記載の方法。
  26. 前記トンネルシリコン酸化物が、約１〜２ｎｍ（１０〜２０オングストローム）の厚みを有する、請求項２０に記載の方法。
JP2009509552A 2006-05-04 2007-02-09 太陽電池 Active JP5213134B2 (ja)

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US9548409B2 (en) 2017-01-17
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US8815631B2 (en) 2014-08-26
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US20100269904A1 (en) 2010-10-28

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