ES2729999T3 - Célula solar con contactos de heterounión semiconductores dopados y procedimiento para su fabricación - Google Patents
Célula solar con contactos de heterounión semiconductores dopados y procedimiento para su fabricación Download PDFInfo
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- ES2729999T3 ES2729999T3 ES16182570T ES16182570T ES2729999T3 ES 2729999 T3 ES2729999 T3 ES 2729999T3 ES 16182570 T ES16182570 T ES 16182570T ES 16182570 T ES16182570 T ES 16182570T ES 2729999 T3 ES2729999 T3 ES 2729999T3
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- doped semiconductor
- semiconductor contact
- solar cell
- silicon
- doped
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 43
- 230000000694 effects Effects 0.000 claims description 34
- 239000002019 doping agent Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 abstract description 2
- 230000005641 tunneling Effects 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 7
- 238000003486 chemical etching Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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Abstract
Una célula solar que comprende: un sustrato de silicio (10); y una capa de óxido con efecto túnel (16) sobre una superficie trasera del sustrato (10), un primer contacto semiconductor dopado (18) sobre la capa de óxido con efecto túnel, y caracterizada por que un segundo contacto semiconductor dopado (22) formado sobre el primer contacto semiconductor dopado (18) y en una abertura a través del primer contacto semiconductor dopado (18) y en contacto con la capa de óxido con efecto túnel (16), donde, los contactos semiconductores dopados primero y segundo tienen tipos de conductividad opuestos y una capa aislante (20) entre el primer contacto semiconductor dopado (18) y el segundo contacto semiconductor dopado (22).
Description
DESCRIPCIÓN
Célula solar con contactos de heterounión semiconductores dopados y procedimiento para su fabricación Antecedentes de la invención
Esta invención se refiere, en general, a células solares fotovoltaicas, y más específicamente la invención se refiere a una estructura de célula solar que es eficaz en su funcionamiento y económica de fabricar.
El uso de células fotovoltaicas para la conversión directa de la radiación solar en energía eléctrica es muy conocido, véase por ejemplo, la patente de Estados Unidos N.° 4.234.352 de Swanson. Brevemente, la célula fotovoltaica comprende un sustrato de material semiconductor que tiene una unión p-n definida en la misma. En la célula de silicio plana, la unión p-n se forma cerca de una superficie del sustrato que recibe radiación impactante. Los fotones radiados crean portadores móviles (huecos y electrones) y el sustrato, que pueden dirigirse a un circuito eléctrico fuera de la celda. Solo los fotones que tengan al menos un nivel de energía mínimo (por ejemplo, 1,1 electrones voltio para el silicio) pueden generar un par de hueco-electrón en el par semiconductor. Los fotones que tienen menos energía o bien no se absorben o se absorben como calor, y el exceso de energía de los fotones que tienen más de 1,1 electrón voltio de energía (por ejemplo, los fotones tienen una longitud de onda de 1,1 pm y menos) crean calor. Estas y otras pérdidas limitan la eficacia de las células fotovoltaicas de silicio para convertir directamente la energía solar en electricidad a menos del 30 %.
Las células solares con contactos interdigitados de polaridad opuesta en la superficie trasera de la célula se conocen y tienen numerosas ventajas sobre la células solares convencionales con contactos con rejillas de metal en la cara delantera y cubierta o rejilla metalizada en la cara trasera, que incluyen una fotogeneración mejorada debido a la eliminación del sombreado de la rejilla delantera, mucho menor resistencia en serie de la rejilla y mejor fotorrespuesta "azul" ya que no se necesita un dopado fuerte de la superficie delantera para minimizar la resistencia del contacto delantero debido a que no hay ningún contacto delantero. Además de las ventajas de rendimiento, la estructura de la célula de contacto trasero permite simplificar el montaje del módulo debido a los contactos coplanarios. Véase, por ejemplo, la patente de Estados Unidos N.° 4.927.770 de Swanson.
Aunque se han fabricado células solares de contacto trasero interdigitadas (IBC), las consideraciones de costes han limitado la comercialización de las células solares de IBC. Hasta ahora, se ha empleado el procesamiento de microelectrónica convencional (circuito integrado) en la fabricación de células solares de IBC, que incluyen el uso de difusiones en la cara trasera, y líneas de metal fabricadas mediante procesos de fotolitografía microelectrónica convencional, metalización de película delgada y grabado químico. Este proceso de fabricación es capaz de producir células solares de alta eficiencia, pero el proceso no es rentable para aplicarlo en paneles solares convencionales de placas planas de bajo coste. El problema clave de la realización práctica de una célula solar de IBC por este proceso es el alto coste de fabricación, que incluye el grabado químico, dopado y alineación de la máscara, y el uso de deposición de conductor de metal grueso por evaporación al vacío o deposición electrónica. Además, el procesamiento debe realizarse en un entorno de sala blanca. Por lo tanto, las células solares de IBC fabricadas usando estos métodos han visto limitada su aplicación a células solares de alta concentración o en aplicaciones de un sol de muy alto valor.
El documento US 7718 888 82 combina un sustrato semiconductor con contactos de polímero aceptor y donador para proporcionar una célula solar que es económica de fabricar. Lo que es más importante, la fabricación de la célula solar se mejora en coste y en ciclos de temperatura reducida a través del uso de aplicaciones de inyección de tinta de los contactos de polímero sin la necesidad de enmascaramiento fotorresistente, grabado químico, difusión del dopante y recocido, como requieren las células solares de la técnica anterior.
El documento US 5057439 A se refiere a un método de fabricación de emisores de polisilicio para células solares. La presente invención utiliza un semiconductor tal como el silicio amorfo como contacto donador y aceptor en una célula solar de silicio que puede fabricarse de forma sencilla y rentable.
Sumario de la invención
La invención utiliza silicio amorfo dopado, Si-Ge, o compuestos III-V como contacto donador o aceptor en una célula solar de silicio. El material de contacto puede ser vapor depositado junto con el dopante como se estime necesario para la aplicación del donador o del aceptor. Como se usa en el presente documento, el silicio "amorfo" incluye silicio "policristalino".
Cuando se deposita sobre un solo sustrato de silicio cristalino, primero crece un óxido con efecto túnel y se separa un silicio amorfo depositado del sustrato para evitar la recristalización del silicio amorfo.
En una célula de contacto trasero interdigitada (IBC), la superficie delantera puede texturarse por abrasión química o física para proporcionar una superficie de captura de radiación con un recubrimiento antirreflectante y de pasivación
como nitruro de silicio, carburo de silicio dopado o un recubrimiento delgado de silicio amorfo sobre la superficie texturada.
La invención y el objeto y las características de la misma serán más fácilmente evidentes a partir de la siguiente descripción detallada y las reivindicaciones adjuntas cuando se toman con los dibujos.
En particular, una célula solar de acuerdo con la presente invención se define en la reivindicación 1. Un método para fabricar una célula solar de acuerdo con la presente invención se define en la reivindicación 14. Otras realizaciones ventajosas se definen en las reivindicaciones dependientes.
Breve descripción de los dibujos
La figura 1 es una vista lateral en sección de una célula solar de contacto trasero interdigitada que incluye un contacto amorfo dopado de acuerdo con una realización de la invención.
Las figuras 2A - 2D son vistas laterales en sección que ilustran la célula solar de la figura 1 durante la fabricación. Descripción detallada de las realizaciones preferidas
De acuerdo con una realización de la invención, una célula solar de contacto trasera interdigitada (IBC) comprende un cuerpo de silicio semiconductor que tiene unas superficies principales opuestas primera y segunda recibe radiación a través de la primera superficie y tiene unos patrones primero y segundo de silicio amorfo dopado aceptor y de silicio amorfo dopado donador, respectivamente, en la segunda superficie o trasera para recibir los portadores de electrón y hueco creados en el sustrato de silicio por los fotones irradiados. La estructura es similar a las células solares de contacto trasero de la técnica anterior que utilizan contactos de conductividad P y N dopados formados en los sustratos para recibir los huecos y electrones creados por la radiación. Sin embargo, el uso de contactos P y N dopados en el sustrato requiere de un procesamiento de enmascaramiento fotorresistente, grabado químico, difusión del dopante y elevada temperatura en la fabricación de la célula solar. El uso de contactos de silicio amorfo aceptores y donadores sobre la estructura, de acuerdo con una realización de la invención, evita la necesidad de un procesamiento de enmascaramiento fotorresistente, difusión del dopante y elevada temperatura necesaria en el recocido de los dopantes difundidos. Se puede colocar un óxido de silicio con efecto túnel entre los contactos y el sustrato para evitar el crecimiento epitaxial del silicio amorfo sobre el sustrato.
A continuación, se considera la figura 1 que es una vista lateral en sección de una célula solar de contacto trasero interdigitada (IBC) de acuerdo con una realización de la invención. La célula incluye un sustrato monocristalino o policristalino con luz de tipo n 10 que tiene una superficie delantera que recibe la radiación y una superficie texturada sobre la que se forma una capa delgada (de por ejemplo 10-150 angstrom) de óxido de silicio con efecto túnel 12, con un recubrimiento de pasivación 14 sobre el óxido de efecto túnel 12 que puede comprender nitruro de silicio, carburo de silicio dopado o una capa de silicio amorfo dopado.
En la superficie trasera del sustrato 10 hay una capa de óxido segundo con efecto túnel 16 sobre la que se forman los contactos de silicio amorfo P+ 18. Un dieléctrico, tal como el óxido de silicio 20 separa el silicio amorfo P+ 18 del silicio amorfo N+ 22 que se forma en las aberturas a través de la capa de silicio amorfo P+ 18 y en contacto con el óxido de efecto túnel 16. Aunque las capas de silicio amorfo 18, 22 se forman por deposición de vapor a baja temperatura, el óxido de efecto túnel 16 evita cualquier recristalización del silicio amorfo por el crecimiento epitaxial del sustrato de silicio 10. El contacto metálico 24 se acopla a la capa de silicio amorfo P+ 18 y los contactos metálicos 26 se acoplan a las capas de silicio amorfo N+ 22.
La heterounión de contacto trasero mejora la pasivación trasera de la célula solar por la inclusión del óxido con efecto túnel 16, el campo de heterounión proporcionado por los contactos de silicio amorfo y la pasivación de los contactos. Como se describirá más adelante en el presente documento, un beneficio del proceso de fabricación del dispositivo es que no se requiere un sistema dopante de alta temperatura.
Las figuras 2A-2D son vistas en sección que ilustran la célula solar de la figura 1 durante su fabricación. Inicialmente, como se muestra en la figura 2A, el sustrato de silicio 10, que puede ser o bien intrínseco o estar ligeramente dopado, tiene un óxido con efecto túnel delgado 16 que ha crecido sobre el mismo, que puede tener un espesor de, por ejemplo, 10-20 angstrom. La capa de silicio amorfo 18 se deposita a continuación, con un dopante de boro y una concentración de dopante de 1020-1021 o 10E20 - 10E21 átomos por centímetro cúbico y un espesor de 500 a 2000 angstrom. El crecimiento de una capa de silicio dopado por deposición de vapor es un procesamiento del silicio conocido. La inclusión de una capa intrínseca debajo de la capa de silicio dopado de tipo p puede fabricarse si se desea una estructura PIN.
Después, se deposita una capa aislante de óxido de silicio 20 por deposición química de vapor a baja presión (LPCVD, PECVD, APCVD), o por un proceso de giro sobre vidrio. La capa de óxido de silicio 16 es de 500 a 1000 angstrom en esta realización ilustrativa.
Después, como se ilustra en la figura 2B, la superficie delantera del sustrato 10 se texturiza mediante abrasión química o mecánica. Esta etapa del proceso puede preceder a las etapas del proceso de la figura 2A, si se desea. A continuación, se forma una máscara fotorresistente sobre la superficie trasera del sustrato 10 y se graba químicamente para formar aberturas a través de la capa de óxido de silicio 20 y silicio amorfo 18 al sustrato 10. El óxido con efecto túnel delgado también se elimina en el proceso de grabado químico y a continuación se aplica una nueva capa del óxido de silicio con efecto túnel en la superficie expuesta del sustrato 10 a través de las aberturas grabadas por crecimiento químico. En la formación del óxido con efecto túnel 16 de la figura 2B, la capa de óxido con efecto túnel 12 puede formarse simultáneamente en la superficie delantera. Tras el crecimiento del óxido con efecto túnel delgado en las aberturas grabadas químicamente, de nuevo hasta un espesor de 10-20 angstrom, se deposita una capa de silicio amorfo dopado N+ 22 sobre la superficie trasera, como se muestra en la figura 2C. La capa 22 se dopa con un dopante N, tal como fósforo con una concentración de 1020-1021 o 10E20-10E21 átomos por centímetro cúbico. Este puede depositarse usando una deposición química de vapor mejorada con plasma (PECVD, LPCVD, APCVD). A continuación, se enmascara el silicio amorfo N+ 22 y se graba químicamente de forma selectiva para exponer el silicio amorfo P+ 18 subyacente para recibir los contactos metálicos. En la figura 2D, los contactos metálicos 24 y 26 se fabrican para el silicio amorfo P+ 18 y para el silicio amorfo N+ 22 por deposición de metal, enmascaramiento fotorresistente y grabado químico. Los contactos pueden formarse dispersando primero una capa de semillas de un metal conductor, como aluminio o cobre y colocando a continuación el metal semilla en una placa con el patrón para aumentar el espesor. La célula se completa a continuación depositando una capa de pasivación 14 sobre el óxido con efecto túnel 12 en la superficie delantera del sustrato 10 usando nitruro de silicio, carburo de silicio dopado o silicio amorfo dopado N+.
Una célula solar de heterounión de acuerdo con la invención, que usa contactos de silicio amorfo dopado se fabrica fácilmente usando técnicas de procesamiento de semiconductores convencionales sin el procesamiento a alta temperatura. La invención se refiere a una célula solar en la que se emplean dos contactos. Además, aunque la heterounión se proporciona mediante el silicio amorfo, en las estructuras de contacto puede emplearse otro material de hueco de banda ancha, tal como una aleación de germanio-silicio, carburo de silicio dopado u otro material compuesto III-V.
Realizaciones que no forman parte de la invención comprenden las siguientes características:
1. Una célula solar que comprende:
a) un cuerpo semiconductor que tiene unas superficies principales opuestas primera y segunda,
b) una primera capa dieléctrica en la primera superficie y una segunda capa dieléctrica en la segunda superficie, comprendiendo la segunda capa dieléctrica un óxido con efecto túnel,
c) un primer patrón de material semiconductor dopado aceptor sobre el óxido con efecto túnel en la segunda superficie, y un segundo patrón de material semiconductor dopado donante sobre el óxido con efecto túnel en la segunda superficie e intercalado con el primer patrón, y
d) un primer patrón conductor que interconecta el material semiconductor dopado aceptor y un segundo patrón conductor que interconecta el material semiconductor dopado donante.
2. La célula solar como se define en la realización 1, donde el material semiconductor se selecciona del grupo que consiste en semiconductores compuestos de silicio amorfo, silicio-germanio y compuestos III-V.
3. La célula solar como se define en la realización 2, donde el material semiconductor comprende silicio amorfo. 4. La célula solar como se define en la realización 3, donde el silicio amorfo dopado aceptor es boro dopado.
5. La célula solar como se define en la realización 4, donde el silicio amorfo dopado donante es fósforo dopado. 6. La célula solar como se define en la realización 5, donde la primera superficie principal está texturizada.
7. La célula solar como se define en la realización 6, donde el cuerpo semiconductor comprende silicio y el óxido con efecto túnel comprende óxido de silicio.
8. La célula solar como se define en la realización 7, donde los patrones conductores primero y segundo se seleccionan del grupo que consiste en aluminio y cobre.
9. La célula solar como se define en la realización 3, donde el cuerpo semiconductor comprende silicio y el óxido con efecto túnel comprende óxido de silicio.
10. La célula solar como se define en la realización 9, donde los patrones conductores primero y segundo se seleccionan del grupo que consiste en aluminio y cobre.
11. En una célula solar de silicio donde pueden crearse, portadores móviles en un sustrato de silicio incidiendo radiación, un contacto para recibir portadores móviles que comprende un óxido con efecto túnel en una superficie del
sustrato y una capa de material semiconductor dopado en el óxido con efecto túnel.
12. El contacto como se define en la realización 11, donde el material semiconductor se selecciona del grupo que consiste en semiconductores de silicio amorfo, silicio-germanio y compuestos III-V.
13. El contacto como se define en la realización 12, donde el material semiconductor comprende silicio amorfo. 14. El contacto como se define en la realización 13, donde el óxido con efecto túnel comprende óxido de silicio. 15. El contacto como se define en la realización 14, donde el óxido de silicio tiene un espesor en el intervalo de 10 20 angstroms.
16. El contacto como se define en la realización 14, donde el silicio amorfo está dopado con un dopante donante. 17. El contacto como se define en la realización 16, donde el dopante donante es fósforo.
18. El contacto definido por la realización 14, donde el silicio amorfo está dopado con un dopante aceptor.
19. El contacto como se define en la realización 18, donde el dopante aceptor es boro.
20. En un método para fabricar una célula solar de silicio, las etapas para fabricar contactos de aceptor de portador comprenden:
a) proporcionar un sustrato de silicio que tiene unas superficies principales opuestas primera y segunda, b) formar una capa de óxido de silicio con efecto túnel en la primera superficie principal, y
c) formar una capa de silicio amorfo dopado en el óxido de silicio con efecto túnel.
21. Las etapas del método de la realización 20, en las que el silicio amorfo dopado tiene dopante en exceso de 1019 átomos por centímetro cúbico.
22. Las etapas del método de la realización 21, en las que el dopante es un dopante donante,
23. Las etapas del método de la realización 22, en las que el dopante comprende fósforo.
24. Las etapas del método de la realización 21, en las que el dopante es un dopante aceptor.
25. Las etapas del método de la realización 24, en las que el dopante comprende boro.
26. Las etapas del método de la realización 20, en las que el óxido de silicio con efecto túnel tiene un espesor en el orden de 10-20 angstroms.
Claims (20)
1. Una célula solar que comprende:
un sustrato de silicio (10); y
una capa de óxido con efecto túnel (16) sobre una superficie trasera del sustrato (10),
un primer contacto semiconductor dopado (18) sobre la capa de óxido con efecto túnel, y
caracterizada por que
un segundo contacto semiconductor dopado (22) formado sobre el primer contacto semiconductor dopado (18) y en una abertura a través del primer contacto semiconductor dopado (18) y en contacto con la capa de óxido con efecto túnel (16), donde, los contactos semiconductores dopados primero y segundo tienen tipos de conductividad opuestos y una capa aislante (20) entre el primer contacto semiconductor dopado (18) y el segundo contacto semiconductor dopado (22).
2. La célula solar de la reivindicación 1, donde un material para el primer contacto semiconductor dopado (18) se selecciona del grupo que consiste en silicio amorfo, silicio-germanio y semiconductores de compuestos III-V.
3. La célula solar de la reivindicación 1, donde el primer contacto semiconductor dopado (18) y el segundo contacto semiconductor dopado (22) comprenden silicio amorfo.
4. La célula solar de la reivindicación 3, donde el silicio amorfo está dopado con un dopante donante.
5. La célula solar de la reivindicación 4, donde el dopante donante es fósforo.
6. La célula solar de la reivindicación 3, donde el silicio amorfo está dopado con un dopante aceptor.
7. La célula solar de la reivindicación 6, donde el dopante aceptor es boro.
8. La célula solar de la reivindicación 1, donde el primer contacto semiconductor dopado (18) y el segundo contacto semiconductor dopado (22) comprenden silicio policristalino dopado.
9. La célula solar de una cualquiera de las reivindicaciones 1 a 8, donde la capa de óxido con efecto túnel (16) comprende óxido de silicio.
10. La célula solar de la reivindicación 9, donde el óxido de silicio tiene un espesor en el intervalo de 10-20 angstroms.
11. La célula solar de una cualquiera de las reivindicaciones 1 a 8, donde la capa de óxido con efecto túnel (16) comprende una capa de óxido de silicio con efecto túnel.
12. La célula solar de una cualquiera de las reivindicaciones 1 a 11, donde la luz recibida sobre una superficie delantera del sustrato de silicio (10) crea portadores móviles, y la superficie trasera del sustrato de silicio (10) es opuesta a la superficie delantera.
13. La célula solar de una cualquiera de las reivindicaciones 1 a 12, que comprende además un primer patrón conductor (24) conectado al primer contacto semiconductor dopado (18) y un segundo patrón conductor (26) conectado al segundo contacto semiconductor dopado (22).
14. Un método para fabricar una célula solar, comprendiendo el método:
proporcionar un sustrato de silicio (10);
formar una capa de óxido con efecto túnel (16) sobre una superficie trasera del sustrato de silicio (10);
formar un primer contacto semiconductor dopado (18) de material semiconductor dopado aceptor sobre la capa de óxido con efecto túnel (16);
formar una abertura a través del primer contacto semiconductor dopado (18);
caracterizado por
formar un segundo contacto semiconductor dopado (22) de material semiconductor dopado donante sobre la capa de óxido con efecto túnel (16); donde el segundo contacto semiconductor dopado (22) está formado sobre el primer contacto semiconductor dopado (18) y en la abertura a través del primer contacto semiconductor dopado (18) y en contacto con la capa de óxido con efecto túnel (16), donde los contactos semiconductores dopados primero y segundo tienen tipos de conductividad opuestos, y una capa aislante (20) se proporciona entre el primer contacto semiconductor dopado (18) y el segundo contacto semiconductor dopado (22).
15. El método de la reivindicación 14, donde la capa de óxido con efecto túnel (16) comprende óxido de silicio.
16. El método de la reivindicación 14 o 15, donde la superficie del sustrato de silicio (10) es opuesta a una superficie de recepción de luz del sustrato de silicio (10).
17. El método de la reivindicaciones 14 a 16, donde el primer contacto semiconductor dopado (18) y el segundo contacto semiconductor dopado (22) comprenden silicio amorfo.
18. El método de la reivindicaciones 14 a 17, donde el primer contacto semiconductor dopado (18) tiene una conductividad de tipo P y el segundo contacto semiconductor dopado (22) tiene una conductividad de tipo N.
19. El método de una cualquiera de las reivindicaciones 14 a 18, que comprende además:
formar un primer patrón conductor (24) que interconecta con el material semiconductor dopado aceptor; y formar un segundo patrón conductor (26) que interconecta con el material semiconductor dopado donante.
20. El método de una cualquiera de las reivindicaciones 14-16, 18 y 19, donde el primer contacto semiconductor dopado (18) y el segundo contacto semiconductor dopado (22) comprenden silicio policristalino dopado.
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US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
US7705237B2 (en) | 2006-11-27 | 2010-04-27 | Sunpower Corporation | Solar cell having silicon nano-particle emitter |
US20170005206A1 (en) * | 2007-10-06 | 2017-01-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
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WO2007130188A2 (en) | 2007-11-15 |
US20070256728A1 (en) | 2007-11-08 |
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CN101438420B (zh) | 2011-06-15 |
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CN101438420A (zh) | 2009-05-20 |
EP3104420B1 (en) | 2019-05-15 |
EP2016627A4 (en) | 2015-11-25 |
KR20130084306A (ko) | 2013-07-24 |
KR101466530B1 (ko) | 2014-11-28 |
WO2007130188A3 (en) | 2008-06-12 |
US20140345688A1 (en) | 2014-11-27 |
US7737357B2 (en) | 2010-06-15 |
AU2007248865B2 (en) | 2012-08-16 |
EP2016627B1 (en) | 2016-08-31 |
JP2009535845A (ja) | 2009-10-01 |
EP2016627A2 (en) | 2009-01-21 |
AU2007248865A1 (en) | 2007-11-15 |
US9608131B2 (en) | 2017-03-28 |
US8815631B2 (en) | 2014-08-26 |
KR101314350B1 (ko) | 2013-10-04 |
KR20090009224A (ko) | 2009-01-22 |
US20100269904A1 (en) | 2010-10-28 |
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