CN101438420A - 具有掺杂的半导体异质结触点的太阳能电池 - Google Patents

具有掺杂的半导体异质结触点的太阳能电池 Download PDF

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CN101438420A
CN101438420A CNA2007800162305A CN200780016230A CN101438420A CN 101438420 A CN101438420 A CN 101438420A CN A2007800162305 A CNA2007800162305 A CN A2007800162305A CN 200780016230 A CN200780016230 A CN 200780016230A CN 101438420 A CN101438420 A CN 101438420A
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solar cell
silicon
amorphous silicon
contact
doping
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CN101438420B (zh
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P·J·卡普斯
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Maikesheng Solar Energy Co ltd
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Abstract

硅太阳能电池具有掺杂的非晶硅触点，所述触点形成在硅基底的表面上的隧道氧化硅层上。在制作该太阳能电池时，不需要高温处理。

Description

具有掺杂的半导体异质结触点的太阳能电池
技术领域
【0001】本发明主要涉及光伏太阳能电池，更具体的涉及有效实施且制作经济的太阳能电池结构。
背景技术
【0002】将太阳能辐射直接转换成电能的光伏电池的使用是公知的，例如参见Swanson的美国专利No.4,234,352。简要来讲，光伏电池包括半导体材料的基底，所述半导体材料具有在其中所限定的p-n结。平面型硅电池中，p-n结形成在接收入射辐射的基底表面附近。辐射的光子产生可移动的载流子(空穴和电子)并且基底可以将其引导至电池的外部电路。只有具有至少最低能量水平(例如，对于硅1.1电子伏)的光子可以在半导体对中产生电子-空穴对。具有较低能量的光子或者没被吸收或者作为热量吸收，而具有高于1.1电子伏的光子(例如，波长为1.1μm或更短的光子)的多余能量产生热量。这些以及其他损失使硅光伏电池将太阳能直接转化成电能的效率被限制在低于30％。
【0003】在电池背表面上具有相反极性的指叉型触点的太阳能电池是已知的，并且与具有前面金属栅格和包层或栅格被金属化的背面触点的传统太阳能电池相比具有多种优势，包括由于前栅格屏蔽的消除而提高的光产生，大幅减少了栅格串联阻抗，以及无需为了最小化前触点阻抗(因为没有前触点)对前表面重掺杂，从而改进了“蓝”光响应。除了性能优势之外，由于是共面触点，背接触式电池结构允许简化的模块组件。例如参见Swanson的美国专利No.4,927,770。
【0004】虽然已经制作出指叉型背接触(IBC)太阳能电池，然而对成本的考虑限制了IBC太阳能电池的商业化。因此到目前为止，在制作IBC太阳能电池中采用传统的微电子(集成电路)工艺，包括背面散射、触点和金属线的使用，其中金属线是通过传统的微电子平版印刷、薄膜金属化和刻蚀工艺制作的。该制作工艺能够产生高效的太阳能电池，但是将该工艺应用于传统的低成本、平板太阳能板中是没有成本效率的。通过该工艺实际实现IBC太阳能电池的关键的问题是制作的高成本，包括刻蚀、掺杂和掩模校准，以及通过真空蒸发或溅射沉积的厚金属导体的使用。此外，该工艺必须在洁净室环境内进行。因此使用这些方法制作的IBC太阳能电池被限制在高聚光太阳能电池或很高价值的一个太阳(one-sun)应用中使用。
【0005】共同未决的申请No.11/306,510将半导体基底同受主和施主聚合物触点结合以提供制作经济的太阳能电池。重要的是，通过聚合物触点的喷墨应用的使用，在成本方面和在减小温度循环方面改进了太阳能电池的制作，而不需要现有技术中太阳能电池需要的光刻胶掩蔽、刻蚀以及掺杂物扩散和退火。
【0006】本发明使用诸如非晶硅的半导体作为硅太阳能电池中的受主和施主触点，这种硅太阳能电池可以被容易的并经济的制作。
发明内容
【0007】本发明使用掺杂的非晶硅、Si-Ge或III-V族化合物作为硅太阳能电池施主或受主触点。触点材料可以连同掺杂物(根据用于施主或受主应用的需要)被气相沉积。这里使用的“非晶”硅包括“多晶”硅。
【0008】当沉积在单晶硅基底上时，隧道氧化物首先生长并将沉积的非晶硅从基底分离以阻止非晶硅的再结晶。
【0009】在指叉型背接触(IBC)电池中，前表面可以是通过化学或物理磨损形成织构以便提供具有抗反射和钝化涂层的辐射捕捉表面，所述抗反射和钝化涂层诸如在织构化表面的氮化硅、掺杂的碳化硅或非晶硅薄膜涂层。
【0010】参照附图，通过以下详细描述和附后的权利要求书，本发明及其目标和特征将更加清晰。
附图说明
【0011】图1是根据本发明的一个实施例的包括掺杂的非晶触点的指叉型背接触太阳能电池的截面侧视图。
【0012】图2A-2D示出了图1的太阳能电池在制作过程中的侧视图。
具体实施方式
【0013】根据本发明的一个实施例，指叉型背接触(IBC)太阳能电池包括具有相对的第一和第二主表面的硅半导体本体(semiconductorbody)，该本体通过第一表面接受辐射，并且在第二表面或背表面上具有分别用于接收电子和空穴载流子的受主掺杂非晶硅和施主掺杂非晶硅的第一和第二图案，所述电子和空穴载流子通过辐射的光子在硅基底中产生。这种结构类似于现有技术的背接触太阳能电池，其采用形成在基底中的掺杂的P和N的导电性触点，用于接收由辐射产生的空穴和电子。然而，在基底中采用掺杂的P和N触点需要在太阳能电池的制作中进行光刻胶掩蔽、刻蚀、掺杂物扩散和高温处理。根据本发明的实施例，在结构上使用受主和施主非晶硅触点消除了对光刻胶掩蔽和掺杂物扩散以及在对扩散的掺杂物进行退火所需的高温处理的需要。隧道氧化硅可以放置在所述触点和基底之间用于阻止基底上非晶硅的外延生长。
【0014】现在参照图1，其是根据本发明一个实施例的指叉型背接触(IBC)太阳能电池的截面侧视图。该电池包括轻掺杂n型单晶或多晶基底10，所述基底10具有接受辐射的前表面，以及织构化表面，在该织构化表面上形成有薄的(例如，10-150埃)隧道氧化硅层12，钝化涂层14覆盖隧道氧化物12，隧道氧化物12可以包括氮化硅、掺杂的碳化硅、或掺杂的非晶硅层。
【0015】在基底10的背表面上的是第二隧道氧化层16，在该第二隧道氧化层16上形成有P+非晶硅触点18。诸如氧化硅20的电介质将P+非晶硅18与N+非晶硅22分开，N+非晶硅22在穿过P+单晶硅层18的开口中形成并且与隧道氧化物16接触。非晶硅层18、22是通过低温气相沉积形成的，而隧道氧化物16通过从硅基底10的外延生长阻止非晶硅的任何再结晶。金属触点24与P+非晶硅层18接合，并且金属触点26与N+硅层22接合。
【0016】由于包含了隧道氧化物16、由非晶硅触点所提供的异质结场、以及触点钝化，背接触异质结增强了太阳能电池的背面钝化。如在下面将要进一步描述的，制造该设备的工艺优点是不需要高温掺杂推进。
【0017】图2A-2D是示出了在制作期间图1的太阳能电池的截面图。首先，如在图2A中所示，硅基底10(其可以是本征的或是轻掺杂的)具有在其上生长的厚度可以为例如10-20埃的薄的隧道氧化物16。然后沉积出具有硼掺杂物的非结晶硅层18，掺杂浓度为每立方厘米1020-1021或10E20-10E21个原子，并且厚度为500-2000埃。通过气相沉积得到的掺杂的硅层的生长是已知的硅工艺。如果期望得到PIN结构，可以制作包括在p型掺杂硅层下的本征层。
【0018】因此，通过低压化学气相沉积(LPCVD、PECVD、APCVD)或通过在玻璃上旋涂的工艺，可以沉积氧化硅20的绝缘层。在该说明性实施例中，氧化硅层16是500-1000埃。
【0019】因此，如图2B所示，基底10的前表面通过化学或机械磨损形成织构。如果期望，该工艺步骤可以先于图2A的工艺步骤。然后，在基底10的背表面形成光刻胶掩膜，并将其刻蚀以便形成穿过二氧化硅层20和非晶硅18到达基底10的开口。薄的隧道氧化物也在刻蚀过程中被移除，而随后采用化学生长的方法将一个新的隧道氧化硅层穿过所刻蚀的开口施加于基底10的暴露的表面上。在形成图2B中的隧道氧化物16过程中，隧道氧化层12可以同时形成在前表面上。在刻蚀的开口中薄隧道氧化物的生长再次达到10-20埃的厚度，随后N+掺杂的非晶硅层22沉积在背表面上，如图2C所示。
【0020】层22利用诸如磷的N型掺杂物掺杂，其掺杂浓度为每立方厘米1020-1021或10E20-10E21个原子。这可以使用等离子体增强的化学气相沉积(PECVD、LPCVD、APCVD)来沉积。然后，N+非晶硅22被掩蔽并选择性的刻蚀以暴露下面的P+非晶硅18用于容纳金属触点。在图2D中，通过金属沉积和光刻胶掩蔽以及刻蚀将金属触点24和26制作到P+非晶硅18和N+非晶硅22上。通过首先散射诸如铝或铜的导电金属的种子层，然后图案涂覆该种子金属以增加厚度来形成触点。然后，通过使用氮化硅、掺杂的碳化硅或N+掺杂的非晶硅来沉积钝化层14至位于基底10的前表面上的隧道氧化物12上，从而完成电池的制作。
【0021】根据本发明的使用掺杂的非晶硅触点的异质结太阳能电池可使用传统的半导体工艺技术容易地制作出来，而不需要高温处理。虽然已经参照采用P+和N+两种触点的指叉型背接触太阳能电池对本发明进行了描述，本发明还可以应用于在背表面上具有单种掺杂的非晶硅的太阳能电池。此外，虽然异质结是通过非晶硅提供的，其它诸如Ge-Si合金、掺杂的碳化硅或其它III-V族化合物材料的高带隙材料可以应用在该触点结构中。因此，虽然本发明参照特定实施例进行了描述，但是这些描述对本发明是示意性的而不应该认为是对本发明的限制。对于本领域技术人员而言，在不偏离本发明所附权利要求的精神和范围内可以做出多种改进和应用。

Claims (26)

1.一种太阳能电池，包括：
a)半导体本体，具有第一主表面和第二相对的主表面，
b)在所述第一表面上的第一电介质层和在所述第二表面上的第二电介质层，所述第二电介质层包括隧道氧化物，
c)在所述第二表面上的隧道氧化物上具有受主掺杂的半导体材料的第一图案，在所述第二表面上的隧道氧化物上具有施主掺杂的半导体材料的第二图案，并且所述第二图案与所述第一图案相交错，以及
d)与所述受主掺杂的半导体材料互连的第一导电性图案和与所述施主掺杂的半导体材料互连的第二导电性图案。
2.权利要求1所述的太阳能电池，其中，所述半导体材料是从包括非晶硅、Si-Ge和III-V化合物半导体的组中选取的。
3.权利要求2所述的太阳能电池，其中，所述半导体材料包括非晶硅。
4.权利要求3所述的太阳能电池，其中，所述受主掺杂的非晶硅是硼掺杂的。
5.权利要求4所述的太阳能电池，其中，所述施主掺杂的非晶硅是磷掺杂的。
6.权利要求5所述的太阳能电池，其中，所述第一主表面为织构化的。
7.权利要求6所述的太阳能电池，其中，所述半导体本体包括硅并且所述隧道氧化物包括氧化硅。
8.权利要求7所述的太阳能电池，其中，所述第一和第二导电性图案是从包括铝和铜的组中选取的。
9.权利要求3所述的太阳能电池，其中，所述半导体本体包括硅并且所述隧道氧化物包括氧化硅。
10.权利要求9所述的太阳能电池，其中，所述第一和第二导电性图案是从包括铝和铜的组中选取的。
11.在硅太阳能电池中用于接收移动载流子的触点，其中在所述硅太阳能电池中，通过入射辐射在硅基底中产生移动载流子，所述触点包括在所述基底表面上的隧道氧化物和在所述隧道氧化物上的掺杂的半导体材料层。
12.权利要求11所述的触点，其中，所述半导体材料是从包括非晶硅、硅-锗、以及III-V族化合物半导体的组中选取的。
13.权利要求12所述的触点，其中，所述半导体材料包括非晶硅。
14.权利要求13所述的触点，其中，所述隧道氧化物包括氧化硅。
15.权利要求14所述的触点，其中，所述氧化硅厚度在10-20埃范围内。
16.权利要求14所述的触点，其中，所述非晶硅是利用施主掺杂物掺杂的。
17.权利要求16所述的触点，其中，所述施主掺杂物是磷。
18.权利要求14所述的触点，其中，所述非晶硅是利用受主掺杂物掺杂的。
19.权利要求18所述的触点，其中，所述受主掺杂物是硼。
20.在制作硅太阳能电池的方法中，制作载流子受主触点的步骤包括：
a)提供具有第一和第二相对主表面的硅基底，
b)在所述第一主表面上形成隧道氧化硅层，以及
c)在所述隧道氧化硅层上形成掺杂的非晶硅层。
21.权利要求20所述方法的步骤，其中，所述掺杂的非晶硅具有每立方厘米超过1019个原子的掺杂物。
22.权利要求21所述方法的步骤，其中，所述掺杂物是施主掺杂物。
23.权利要求22所述方法的步骤，其中，所述掺杂物包括磷。
24.权利要求21所述方法的步骤，其中，所述掺杂物是受主掺杂物。
25.权利要求24所述方法的步骤，其中，所述掺杂物包括硼。
26.权利要求20所述方法的步骤，其中，所述隧道氧化硅的厚度在10-20埃的量级。
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US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8637340B2 (en) * 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
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US20170005206A1 (en) * 2007-10-06 2017-01-05 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
CN100550435C (zh) * 2007-12-26 2009-10-14 杨东 一种太阳能电池板及其制作方法
DE102008005396A1 (de) 2008-01-21 2009-07-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zur Herstellung einer Solarzelle
WO2009094570A2 (en) * 2008-01-24 2009-07-30 Applied Materials, Inc. Plating through tunnel dielectrics for solar cell contact formation
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
CN101562203B (zh) * 2008-04-18 2014-07-09 清华大学 太阳能电池
CN101552297B (zh) * 2008-04-03 2012-11-21 清华大学 太阳能电池
CN101527327B (zh) * 2008-03-07 2012-09-19 清华大学 太阳能电池
CN101552295A (zh) * 2008-04-03 2009-10-07 清华大学 太阳能电池
CN101562204B (zh) * 2008-04-18 2011-03-23 鸿富锦精密工业（深圳）有限公司 太阳能电池
CN101552296B (zh) * 2008-04-03 2011-06-08 清华大学 太阳能电池
US20090288704A1 (en) * 2008-04-09 2009-11-26 Applied Materials, Inc. Nitrided barrier layers for solar cells
US12074240B2 (en) 2008-06-12 2024-08-27 Maxeon Solar Pte. Ltd. Backside contact solar cells with separated polysilicon doped regions
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US8309446B2 (en) * 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
JP2012501551A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド バックコンタクト式太陽電池モジュール
WO2010025262A2 (en) 2008-08-27 2010-03-04 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
DE102008045522A1 (de) * 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen
US20100071765A1 (en) * 2008-09-19 2010-03-25 Peter Cousins Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer
US9029687B2 (en) * 2008-10-23 2015-05-12 Alta Devices, Inc. Photovoltaic device with back side contacts
EP2345088A2 (en) * 2008-10-23 2011-07-20 Alta Devices, Inc. Integration of a photovoltaic device
KR100993511B1 (ko) * 2008-11-19 2010-11-12 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR20110105382A (ko) 2008-12-10 2011-09-26 어플라이드 머티어리얼스, 인코포레이티드 스크린 프린팅 패턴 정렬을 위한 향상된 비젼 시스템
KR20110097957A (ko) * 2008-12-18 2011-08-31 퍼스트 솔라, 인코포레이티드 후방 금속 컨택트를 포함하는 광기전 장치
EP2200082A1 (en) * 2008-12-19 2010-06-23 STMicroelectronics Srl Modular interdigitated back contact photovoltaic cell structure on opaque substrate and fabrication process
DE102008055028A1 (de) * 2008-12-19 2010-07-01 Q-Cells Se Solarzelle
DE102008055036A1 (de) * 2008-12-19 2010-07-08 Q-Cells Se Solarzelle
US8367924B2 (en) * 2009-01-27 2013-02-05 Applied Materials, Inc. Buried insulator isolation for solar cell contacts
US20100186808A1 (en) * 2009-01-27 2010-07-29 Peter Borden Plating through tunnel dielectrics for solar cell contact formation
US20100186802A1 (en) * 2009-01-27 2010-07-29 Peter Borden Hit solar cell structure
KR101099480B1 (ko) * 2009-02-13 2011-12-27 엘지전자 주식회사 태양전지 및 그의 제조방법과 기판 식각 방법
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
US8288645B2 (en) * 2009-03-17 2012-10-16 Sharp Laboratories Of America, Inc. Single heterojunction back contact solar cell
EP2422373B1 (en) * 2009-04-21 2024-06-05 Tetrasun, Inc. Method for manufacturing high efficiency solar cell structures
DE102009024598A1 (de) * 2009-06-10 2011-01-05 Institut Für Solarenergieforschung Gmbh Solarzelle mit Kontaktstruktur mit geringen Rekombinationsverlusten sowie Herstellungsverfahren für solche Solarzellen
US8450141B2 (en) * 2009-06-17 2013-05-28 University Of Delaware Processes for fabricating all-back-contact heterojunction photovoltaic cells
US9064999B2 (en) * 2009-09-07 2015-06-23 Lg Electronics Inc. Solar cell and method for manufacturing the same
DE102009040670A1 (de) 2009-09-09 2010-02-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer einseitig kontaktierbaren Solarzelle
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US20130167915A1 (en) 2009-12-09 2013-07-04 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers
FR2953999B1 (fr) 2009-12-14 2012-01-20 Total Sa Cellule photovoltaique heterojonction a contact arriere
KR20110071377A (ko) * 2009-12-21 2011-06-29 현대중공업 주식회사 후면전계형 이종접합 태양전지의 제조방법
KR20110071378A (ko) * 2009-12-21 2011-06-29 현대중공업 주식회사 후면전계형 이종접합 태양전지의 제조방법
FR2955702B1 (fr) 2010-01-27 2012-01-27 Commissariat Energie Atomique Cellule photovoltaique comprenant un film mince de passivation en oxyde cristallin de silicium et procede de realisation
FR2955707B1 (fr) 2010-01-27 2012-03-23 Commissariat Energie Atomique Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin
US8790957B2 (en) 2010-03-04 2014-07-29 Sunpower Corporation Method of fabricating a back-contact solar cell and device thereof
US9202960B2 (en) * 2010-03-30 2015-12-01 Sunpower Corporation Leakage pathway layer for solar cell
US20120318340A1 (en) * 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
WO2013055307A2 (en) 2010-08-05 2013-04-18 Solexel, Inc. Backplane reinforcement and interconnects for solar cells
US20120048372A1 (en) * 2010-08-25 2012-03-01 Hyungseok Kim Solar cell
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US20120073650A1 (en) * 2010-09-24 2012-03-29 David Smith Method of fabricating an emitter region of a solar cell
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
TWI453939B (zh) 2010-12-30 2014-09-21 Au Optronics Corp 太陽能電池及其製作方法
US10011920B2 (en) 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
JP5842173B2 (ja) * 2011-03-28 2016-01-13 パナソニックＩｐマネジメント株式会社 光電変換装置及び光電変換装置の製造方法
US8486746B2 (en) * 2011-03-29 2013-07-16 Sunpower Corporation Thin silicon solar cell and method of manufacture
CN102185031B (zh) * 2011-04-13 2013-07-31 山东力诺太阳能电力股份有限公司 基于p型硅片的背接触式hit太阳能电池制备方法
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20140174501A1 (en) * 2011-06-25 2014-06-26 Alfred Jost Enegry conversion device and method
KR20130050721A (ko) 2011-11-08 2013-05-16 삼성에스디아이 주식회사 태양 전지
US8507298B2 (en) 2011-12-02 2013-08-13 Varian Semiconductor Equipment Associates, Inc. Patterned implant of a dielectric layer
KR101854241B1 (ko) * 2011-12-13 2018-06-15 주성엔지니어링(주) 태양 전지 및 그 제조 방법
JP2013125890A (ja) * 2011-12-15 2013-06-24 Sharp Corp 光電変換素子およびその製造方法
US8597970B2 (en) 2011-12-21 2013-12-03 Sunpower Corporation Hybrid polysilicon heterojunction back contact cell
KR101654548B1 (ko) 2011-12-26 2016-09-06 솔렉셀, 인크. 태양 전지에서 향상된 광 포획을 위한 시스템 및 방법
CN104011882A (zh) 2012-01-12 2014-08-27 应用材料公司 制造太阳能电池装置的方法
KR101948206B1 (ko) * 2012-03-02 2019-02-14 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지와, 이의 제조 방법
US9054255B2 (en) * 2012-03-23 2015-06-09 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
WO2013146271A1 (ja) * 2012-03-30 2013-10-03 三洋電機株式会社 太陽電池及びその製造方法
US8940580B2 (en) 2012-06-28 2015-01-27 International Business Machines Corporation Textured multi-junction solar cell and fabrication method
US9105775B2 (en) 2012-06-28 2015-08-11 International Business Machines Corporation Textured multi-junction solar cell and fabrication method
AU2013326971B2 (en) 2012-10-04 2016-06-30 Tesla, Inc. Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
CN102856328B (zh) 2012-10-10 2015-06-10 友达光电股份有限公司 太阳能电池及其制作方法
US9059212B2 (en) 2012-10-31 2015-06-16 International Business Machines Corporation Back-end transistors with highly doped low-temperature contacts
US20140130854A1 (en) * 2012-11-12 2014-05-15 Samsung Sdi Co., Ltd. Photoelectric device and the manufacturing method thereof
US8912071B2 (en) 2012-12-06 2014-12-16 International Business Machines Corporation Selective emitter photovoltaic device
US8642378B1 (en) * 2012-12-18 2014-02-04 International Business Machines Corporation Field-effect inter-digitated back contact photovoltaic device
US9312406B2 (en) * 2012-12-19 2016-04-12 Sunpower Corporation Hybrid emitter all back contact solar cell
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9082925B2 (en) * 2013-03-13 2015-07-14 Sunpower Corporation Methods for wet chemistry polishing for improved low viscosity printing in solar cell fabrication
EP2782144B1 (en) 2013-03-19 2019-05-15 IMEC vzw Method for fabricating heterojunction interdigitated back contact photovoltaic cells
KR101699743B1 (ko) * 2013-04-03 2017-02-13 엘지전자 주식회사 태양 전지
EP4092764A1 (en) 2013-04-03 2022-11-23 Lg Electronics Inc. Solar cell
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
KR102045001B1 (ko) * 2013-06-05 2019-12-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102053140B1 (ko) * 2013-09-09 2019-12-06 엘지전자 주식회사 태양 전지
WO2015045242A1 (ja) 2013-09-25 2015-04-02 パナソニックＩｐマネジメント株式会社 太陽電池、太陽電池モジュールおよび太陽電池の製造方法
DE102013219565A1 (de) * 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle und Verfahren zum Herstellen einer photovoltaischen Solarzelle
KR102132740B1 (ko) * 2013-10-21 2020-07-10 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102132739B1 (ko) * 2013-10-29 2020-07-10 엘지전자 주식회사 태양 전지
KR101622090B1 (ko) 2013-11-08 2016-05-18 엘지전자 주식회사 태양 전지
US9362427B2 (en) * 2013-12-20 2016-06-07 Sunpower Corporation Metallization of solar cells
US9196758B2 (en) * 2013-12-20 2015-11-24 Sunpower Corporation Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
US20150179847A1 (en) * 2013-12-20 2015-06-25 Seung Bum Rim Built-in bypass diode
KR101867855B1 (ko) * 2014-03-17 2018-06-15 엘지전자 주식회사 태양 전지
US9337369B2 (en) * 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
US9947812B2 (en) * 2014-03-28 2018-04-17 Sunpower Corporation Metallization of solar cells
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
KR101569417B1 (ko) * 2014-07-07 2015-11-16 엘지전자 주식회사 태양 전지
JP2017520920A (ja) * 2014-07-17 2017-07-27 ソーラーシティ コーポレーション 交差指型背面接触を有する太陽電池
KR101661807B1 (ko) * 2014-07-28 2016-09-30 엘지전자 주식회사 태양 전지 및 그 제조 방법
US9466754B2 (en) * 2014-07-30 2016-10-11 Sunpower Corporation Grain growth for solar cells
KR102244604B1 (ko) * 2014-08-14 2021-04-26 엘지전자 주식회사 태양 전지
KR101622091B1 (ko) * 2014-08-20 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101630526B1 (ko) * 2014-09-05 2016-06-14 엘지전자 주식회사 태양 전지
US9837576B2 (en) 2014-09-19 2017-12-05 Sunpower Corporation Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
JP6219913B2 (ja) 2014-11-28 2017-10-25 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9520507B2 (en) 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9525083B2 (en) 2015-03-27 2016-12-20 Sunpower Corporation Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer
US11355657B2 (en) 2015-03-27 2022-06-07 Sunpower Corporation Metallization of solar cells with differentiated p-type and n-type region architectures
KR102272433B1 (ko) * 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
WO2017047310A1 (ja) * 2015-09-18 2017-03-23 シャープ株式会社 光電変換素子及びその製造方法
JP2017059763A (ja) * 2015-09-18 2017-03-23 シャープ株式会社 光電変換素子及びその製造方法
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9985159B2 (en) * 2015-11-13 2018-05-29 Alliance For Sustainable Energy, Llc Passivated contact formation using ion implantation
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US11522091B2 (en) * 2016-01-27 2022-12-06 Shangrao Jinko Solar Technology Development Co., Ltd Solar cell
US9502601B1 (en) 2016-04-01 2016-11-22 Sunpower Corporation Metallization of solar cells with differentiated P-type and N-type region architectures
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
CN106169509A (zh) * 2016-08-22 2016-11-30 四川英发太阳能科技有限公司 一种利于封装的新型背接触电池装置
CN106206777A (zh) * 2016-08-22 2016-12-07 四川英发太阳能科技有限公司 一种低成本、规模化生产的背接触电池
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
WO2019206679A1 (en) 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Passivated layer stack for a light harvesting device
US11824126B2 (en) 2019-12-10 2023-11-21 Maxeon Solar Pte. Ltd. Aligned metallization for solar cells
FR3112427A1 (fr) * 2020-07-13 2022-01-14 Semco Smartech France Formation de contacts passivés pour cellules solaires IBC
FR3112428A1 (fr) * 2020-07-13 2022-01-14 Semco Smartech France Procédé de formation de contacts passivés pour cellules solaires IBC
CN112768549A (zh) * 2021-02-09 2021-05-07 通威太阳能（成都）有限公司 一种高光电转换效率的hjt电池及其制备方法
CN115621333B (zh) * 2022-11-22 2023-03-10 金阳(泉州)新能源科技有限公司 双面隧穿氧化硅钝化的背接触太阳能电池及其制备方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000505A (en) * 1975-08-08 1976-12-28 The United States Of America As Represented By The Secretary Of The Army Thin oxide MOS solar cells
US4234352A (en) * 1978-07-26 1980-11-18 Electric Power Research Institute, Inc. Thermophotovoltaic converter and cell for use therein
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
US4272641A (en) * 1979-04-19 1981-06-09 Rca Corporation Tandem junction amorphous silicon solar cells
JPH03209780A (ja) * 1980-03-31 1991-09-12 Semiconductor Energy Lab Co Ltd 光電変換装置
US4315097A (en) * 1980-10-27 1982-02-09 Mcdonnell Douglas Corporation Back contacted MIS photovoltaic cell
US4478879A (en) * 1983-02-10 1984-10-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Screen printed interdigitated back contact solar cell
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
FR2641645B1 (fr) * 1988-12-27 1991-04-26 Paris Chambre Commerce Ind Procede de realisation d'un composant mim et application a la realisation d'un ecran plat ou d'une ram
US5053083A (en) 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5057439A (en) 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
US5052083A (en) * 1990-08-07 1991-10-01 Hammer Charles P Tie band with display
JPH04290274A (ja) * 1991-03-19 1992-10-14 Sharp Corp 光電変換装置
JP3722326B2 (ja) * 1996-12-20 2005-11-30 三菱電機株式会社 太陽電池の製造方法
US6821875B2 (en) * 2000-05-05 2004-11-23 Unisearch Limited Low area metal contacts for photovoltaic devices
JP3490964B2 (ja) * 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
DE10045249A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements
DE60144528D1 (de) * 2000-10-19 2011-06-09 Quantum Semiconductor Llc Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden
JP2003142709A (ja) * 2001-10-31 2003-05-16 Sharp Corp 積層型太陽電池およびその製造方法
JP2003298078A (ja) * 2002-03-29 2003-10-17 Ebara Corp 光起電力素子
JP4155899B2 (ja) * 2003-09-24 2008-09-24 三洋電機株式会社 光起電力素子の製造方法
EP1519422B1 (en) * 2003-09-24 2018-05-16 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic cell and its fabrication method
JP3998619B2 (ja) * 2003-09-24 2007-10-31 三洋電機株式会社 光起電力素子およびその製造方法
JP4511146B2 (ja) * 2003-09-26 2010-07-28 三洋電機株式会社 光起電力素子およびその製造方法
WO2006039209A1 (en) * 2004-09-29 2006-04-13 The Regents Of The University Of California Low-voltage memory having flexible gate charging element
FR2880989B1 (fr) * 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US20070137699A1 (en) * 2005-12-16 2007-06-21 General Electric Company Solar cell and method for fabricating solar cell
US7718888B2 (en) * 2005-12-30 2010-05-18 Sunpower Corporation Solar cell having polymer heterojunction contacts
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts

Cited By (28)

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