CN105355678B - 形成背接触太阳能电池触点的方法 - Google Patents

形成背接触太阳能电池触点的方法 Download PDF

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CN105355678B
CN105355678B CN201510824544.4A CN201510824544A CN105355678B CN 105355678 B CN105355678 B CN 105355678B CN 201510824544 A CN201510824544 A CN 201510824544A CN 105355678 B CN105355678 B CN 105355678B
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简·曼宁
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Maikesheng Solar Energy Co ltd
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Abstract

本发明描述了形成背接触太阳能电池触点的方法。在一个实施例中，方法包括在基板上形成薄介电层，在所述薄介电层上形成多晶硅层，在所述多晶硅层上形成并图案化固态p型掺杂剂源，在所述多晶硅层的暴露区域上以及多个固态p型掺杂剂源区域上形成n型掺杂剂源层，以及加热所述基板以在多个p型掺杂的多晶硅区域中提供多个n型掺杂的多晶硅区域。

Description

形成背接触太阳能电池触点的方法
本申请是基于申请日为2011年10月3日、申请号为201180032320.X(国际申请号为PCT/US2011/054603)、发明创造名称为“形成背接触太阳能电池触点的方法”的中国专利申请的分案申请。
本文所述的发明在政府支持下根据美国能源部授予的第DE-FC36-07GO17043号合同完成。政府可享有本发明的某些权利。
技术领域
本发明的实施例属于可再生能源领域，具体地讲是形成背接触太阳能电池触点的方法。
背景技术
光伏电池通常称为太阳能电池，是熟知的用于将太阳辐射直接转化成电能的装置。通常在半导体晶片或基板上用半导体加工技术在基板表面附近形成p-n结来制造太阳能电池。冲击在基板表面上并进入基板内的太阳辐射在基板主体中形成电子和空穴对。电子和空穴对迁移至基底中的p掺杂区域和n掺杂区域，从而在掺杂区域之间产生电压差。将掺杂区域连接到太阳能电池上的导电区域，以将电流从电池引导至与其耦合的外部电路。
附图说明
图1示出了根据本发明实施例的形成背接触太阳能电池触点的方法中的操作流程图。
图2A示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作102和图3流程图的操作302相对应。
图2B示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作104和图3流程图的操作304相对应。
图2C示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作106和图3流程图的操作306相对应。
图2D示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作108和图3流程图的操作308相对应。
图2E示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图3流程图的操作308和310相对应。
图2F示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作110和图3流程图的操作314相对应。
图2G示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作112和图3流程图的操作316相对应。
图2H示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作114和图3流程图的操作318相对应。
图2I示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作116和图3流程图的操作320相对应。
图2J示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图。
图2K示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图，该阶段与图1流程图的操作118和图3流程图的操作322相对应。
图2L示出了根据本发明实施例的背接触太阳能电池制造中的一个阶段的剖视图。
图3示出了根据本发明实施例的形成背接触太阳能电池触点的方法中的操作流程图。
具体实施方式
本文描述了工艺流程形成背接触太阳能电池触点的方法。在以下的描述中，示出了许多具体细节(例如，具体处理流程操作)以提供对本发明实施例的透彻理解。对本领域的技术人员将显而易见的是在没有这些具体细节的情况下可实施本发明的实施例。在其他情况中，没有详细地描述熟知的技术，如平版印刷和图案化技术，以避免不必要地使本发明的实施例难以理解。此外，应当理解在图中示出的多种实施例是示例性的表现并且未必按比例绘制。
本文公开了形成背接触太阳能电池触点的方法。在一个实施例中，方法包括在基板上形成薄介电层。在薄介电层上形成多晶硅层。在多晶硅层上形成并图案化固态p型掺杂剂源。通过图案化使多个固态p型掺杂剂源区域之间的多晶硅层区域暴露。在多晶硅层暴露区域和多个固态p型掺杂剂源区域上形成n型掺杂剂源层。形成n型掺杂剂源包括至少部分地将掺杂剂从n型掺杂剂源层驱入多晶硅层的暴露区域，以在多个固态p型掺杂剂源区域之间形成多个包含n型掺杂剂的多晶硅区域。加热基板，以在多个p型掺杂的多晶硅区域之中提供多个n型掺杂的多晶硅区域。
在另一个实施例中，方法还包括首先在基板上形成薄介电层。在薄介电层上形成多晶硅层。在多晶硅层上形成并图案化固态p型掺杂剂源。通过图案化使多个固态p型掺杂剂源区域之间的多晶硅层区域暴露。将基板装在反应室中，并在不将基板从反应室中取出的情况下，在多晶硅层的暴露区域上和多个固态p型掺杂剂源区域上形成n型掺杂剂源层。另外，至少部分地将掺杂剂从n型掺杂剂源层驱入多晶硅层的暴露区域，以在多个固态p型掺杂剂源区域之间形成多个包含n型掺杂剂的多晶硅区域。从反应室中取出基板。随后，加热基板，以在多个p型掺杂的多晶硅区域之中提供多个n型掺杂的多晶硅区域。
可以用激光烧蚀形成穿过抗反射涂层(ARC)的孔或开口来进行背接触太阳能电池触点的形成，其中所述抗反射涂层在太阳能电池背面上的p型和n型掺杂区域阵列上形成。然后可以在开口中形成导电触点，如金属触点，从而提供与p型和n型掺杂区域阵列的电耦合。然而，为了有利于快速可靠的激光烧蚀过程，可能有利的是确保p型和n型掺杂区域上的总介电厚度较薄并在p型和n型掺杂区域上相对一致。总介电厚度可以包括ARC层的厚度加上在p型和n型掺杂区域上形成的任何其他介电层的厚度，如固态掺杂剂源膜，如硼硅酸盐玻璃(BSG)和(如果使用的话)磷硅酸盐玻璃(PSG)。
根据本发明的实施例，用POCl3沉积操作取代使用PSG固态掺杂剂源进行的n型掺杂区域的掺杂操作，从而在与O2混合后形成P2O5层。对掺杂操作的这种修改可以减少形成p型和n型掺杂区域阵列所需的总工艺操作数量，并可以有助于优化驱入过程，从而确保p型和n型掺杂区域上的总介电厚度较薄并在p型和n型掺杂区域上相对一致。此外，在一个实施例中，在处理工具的单个室中只通过单次引入处理室进行掺杂源沉积和至少部分驱入。
图1示出了根据本发明实施例的形成背接触太阳能电池触点的方法中的操作流程图100。图2A-2L示出了根据本发明实施例的背接触太阳能电池制造中与流程图100的操作相对应的多个阶段的剖视图。
参见流程图100的操作102和对应的图2A，形成背接触太阳能电池触点的方法包括在基板200上形成薄介电层202。
在一个实施例中，薄介电层202由二氧化硅构成并具有5-50埃范围内的厚度。在一个实施例中，薄介电层202用作隧穿氧化层。在一个实施例中，基板200为整体单晶基板，如n型掺杂的单晶硅基板。然而，在可供选择的实施例中，基板200包括设置在整个太阳能电池基板上的多晶硅层。
参见流程图100的操作104和对应的图2B，形成背接触太阳能电池触点的方法还包括在薄介电层202上形成多晶硅层204。应当理解，术语多晶硅层的使用旨在还涵盖可被称为无定形硅或α硅的材料。
参见流程图100的操作106和对应的图2C，形成背接触太阳能电池触点的方法还包括在多晶硅层204上形成并图案化固态p型掺杂剂源206。
在一个实施例中，通过图案化在多个固态p型掺杂剂源区域206之间暴露多晶硅层204的区域208，如图2C所示。在一个实施例中，形成并图案化固态p型掺杂剂源206包括形成并图案化硼硅酸盐玻璃(BSG)层。在一个具体的实施例中，形成的BSG层为均匀的毯层，然后通过平版印刷和蚀刻处理进行图案化。在另一个具体的实施例中，沉积的BSG层已经具有图案，因此，形成和图案化同时进行。在一个这样的实施例中，图案化的BSG层通过喷墨印刷法或丝网印刷法形成。应当理解，固态p型掺杂剂源为包含掺杂剂杂质原子的膜层并可以沉积在基板上方。这与离子注入法相对应。
参见流程图100的操作108和对应的图2D，形成背接触太阳能电池触点的方法还包括在多晶硅层204的暴露区域208上和多个固态p型掺杂剂源区域206上形成n型掺杂剂源层210。
在一个实施例中，参见图2E，该形成包括至少部分地将掺杂剂从n型掺杂剂源层210驱入多晶硅层204的暴露区域208，从而在多个固态p型掺杂剂源区域206之间形成多个包含n型掺杂剂的多晶硅区域212。在一个实施例中，再次参见图2E，形成n型掺杂剂源层210还包括至少部分地将掺杂剂从多个固态p型掺杂剂源区域206驱入多晶硅层204中，以形成区域214。在一个实施例中，形成n型掺杂剂源层包括形成P2O5层。随后，可以移除n型掺杂剂源层210，如图2F所示。
参见流程图100的操作110和对应的图2F，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括在多个包含n型掺杂剂的多晶硅区域212和多个固态p型掺杂剂源区域206以及对应区域214之间形成沟槽216。
在一个实施例中，在多晶硅层204中、在薄介电层202中以及部分地在基板202中形成沟槽216。在一个实施例中，用平版印刷和蚀刻处理形成沟槽216。在一个具体的实施例中，用不同的蚀刻操作对多晶硅层204然后对基板200进行图案化。
参见流程图100的操作112和对应的图2G，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括在形成沟槽216之后对沟槽216所暴露出的基板200的部分218进行纹理化。
在一个实施例中，纹理化提供无规纹理图案。无规纹理图案可以通过对基板200的暴露区域应用各向异性蚀刻处理而形成，并因此可由基板200的晶面，如单晶硅晶面测定。在一个实施例中，进行沟槽216的形成和基板200的纹理化时，沟槽216的形成与基板200的纹理化之间不进行固化操作。这样的固化操作可以包括加热操作、暴露于红外线(IR)辐射或暴露于紫外线(UV)辐射。
参见流程图100的操作114和对应的图2H，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括移除多个固态p型掺杂剂源区域206。在一个实施例中，使用湿法蚀刻技术通过施加包含氢氟酸水溶液或另一种HF源的润湿溶液移除多个固态p型掺杂剂源区域206。在一个实施例中，通过等离子蚀刻移除多个固态p型掺杂剂源区域206。
参见流程图100的操作116和对应的图2I，形成背接触太阳能电池触点的方法还包括对基板200进行加热299，从而在多个p型掺杂的多晶硅区域222之中提供多个n型掺杂的多晶硅区域220。
在一个实施例中，加热基板200包括活化多个包含n型掺杂剂的多晶硅区域212中的掺杂剂，形成多个n型掺杂的多晶硅区域220。在一个实施例中，活化包括将至少一些掺杂剂的结合从间隙掺杂变成多晶硅层204内的替位掺杂。在一个具体的实施例中，活化包括提供多个具有50–300欧姆/平方范围内的低薄层电阻的n型掺杂的多晶硅区域220。
在一个实施例中，加热基板200还包括将源自多个固态p型掺杂剂源区域206的掺杂剂进一步驱入多晶硅层204，以及活化多晶硅层204中的掺杂剂，从而提供多个p型掺杂的多晶硅区域222。在一个实施例中，活化包括将至少一些掺杂剂的结合从间隙掺杂变成多晶硅层204内的替位掺杂。在一个具体的实施例中，活化包括提供多个具有50-300欧姆/平方范围内的低薄层电阻的p型掺杂的多晶硅区域222。
参见图2J，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括在多个n型掺杂的多晶硅区域220、多个p型掺杂的多晶硅区域222和基板200的暴露部分上形成介电层224。在一个实施例中，形成的介电层224的下表面与多个n型掺杂的多晶硅区域220、多个p型掺杂的多晶硅区域222和基板200的暴露部分适形形成，而介电层224的上表面基本平坦，如图2J所示。在一个具体的实施例中，介电层224为抗反射涂层(ARC)。
参见流程图100的操作118和对应的图2K，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括通过激光烧蚀形成多个通往多个n型掺杂的多晶硅区域220和多个p型掺杂的多晶硅区域222的触点开口226。在一个实施例中，通往n型掺杂的多晶硅区域220的触点开口226与通往p型掺杂的多晶硅区域222的触点开口具有实质上相同的高度，如图2K所示。
参见图2L，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括在多个触点开口226中形成导电触点228并将其耦合到多个n型掺杂的多晶硅区域220和多个p型掺杂的多晶硅区域222。在一个实施例中，导电触点228由金属构成并通过沉积、平版印刷和蚀刻方法形成。
在本发明的另一个方面，在多晶硅层和p型掺杂剂源上形成n型掺杂剂源，然后将n型和p型掺杂剂驱入多晶硅层，而一直不将对应的下层基板从反应室中取出。例如，图3示出了根据本发明实施例的形成背接触太阳能电池触点的方法中的操作流程图300。图2A-2L示出了根据本发明实施例的背接触太阳能电池制造中与流程图300的操作相对应的多个阶段的剖视图。
参见流程图300的操作302和对应的图2A，形成背接触太阳能电池触点的方法包括在基板200上形成薄介电层202。
在一个实施例中，薄介电层202由二氧化硅构成并具有5-50埃范围内的厚度。在一个实施例中，薄介电层202用作隧穿氧化层。在一个实施例中，基板200为整体单晶基板，如n型掺杂的单晶硅基板。然而，在可供选择的实施例中，基板200包括设置在整个太阳能电池基板上的多晶硅层。
参见流程图300的操作304和对应的图2B，形成背接触太阳能电池触点的方法还包括在薄介电层202上形成多晶硅层204。应当理解，术语多晶硅层的使用旨在还涵盖可被称为无定形硅或α硅的材料。
在一个实施例中，通过图案化在多个固态p型掺杂剂源区域206之间暴露多晶硅层204的区域208，如图2C所示。在一个实施例中，形成并图案化固态p型掺杂剂源206包括形成并图案化硼硅酸盐玻璃(BSG)层。在一个具体的实施例中，形成的BSG层为均匀的毯层，然后通过平版印刷和蚀刻处理进行图案化。在另一个具体的实施例中，沉积的BSG层已经具有图案，因此，形成和图案化同时进行。在一个这样的实施例中，图案化的BSG层通过喷墨印刷法或丝网印刷法形成。应当理解，固态p型掺杂剂源为包含掺杂剂杂质原子的膜层并可以沉积在基板上方。这与离子注入法相对应。
参见流程图300的操作308以及对应的图2D和2E，形成背接触太阳能电池触点的方法还包括在反应室中装入基板200。无需从反应室取出基板200，在多晶硅层204的暴露区域208上以及多个固态p型掺杂剂源区域206上形成n型掺杂剂源层210。将来自n型掺杂剂源层210的掺杂剂至少部分地驱入多晶硅层204的暴露区域208，以在多个固态p型掺杂剂源区域206之间形成多个包含n型掺杂剂的多晶硅区域212。
在一个实施例中，再次参见图2E，形成n型掺杂剂源层210还包括至少部分地将掺杂剂从多个固态p型掺杂剂源区域206驱入多晶硅层204中，以形成区域214。在一个实施例中，形成n型掺杂剂源层包括形成P2O5层。应当注意，可能的情况是：将掺杂剂从多个固态p型掺杂剂源区域206驱入(或进一步驱入)多晶硅层204以形成区域214时，除了仅形成n型掺杂剂源层210之外，还需要在处理室中进行另外的操作。例如，在一个实施例中，参见流程图300的可选操作310，该方法还包括单独的操作，其中当基板200仍装在反应室中时，来自固态p型掺杂剂源的掺杂剂被至少部分地驱入多晶硅层204，形成或进一步形成区域214。在一个实施例中，操作310涉及在远高于与操作308相连的所述的操作温度下加热基板200。
参见流程图300的操作312，形成背接触太阳能电池触点的方法还包括，在将基板200单次引入反应室时进行上述加工操作之后，从反应室中取出基板200。随后，可以移除n型掺杂剂源层210，如图2F所示。
参见流程图300的操作314和对应的图2F，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括在多个包含n型掺杂剂的多晶硅区域212和多个固态p型掺杂剂源区域206以及对应的区域214之间形成沟槽216。
在一个实施例中，在多晶硅层204中、在薄介电层202中以及部分地在基板202中形成沟槽216。在一个实施例中，用平版印刷和蚀刻处理形成沟槽216。在一个具体的实施例中，用不同的蚀刻操作对多晶硅层204然后对基板200进行图案化。
参见流程图300的操作316和对应的图2G，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括在形成沟槽216之后对沟槽216所暴露出的基板200的部分218进行纹理化。
在一个实施例中，纹理化提供无规纹理图案。无规纹理图案可以通过对基板200的暴露区域应用各向异性蚀刻处理而形成，并因此可由基板200的晶面，如单晶硅平面测定。在一个实施例中，进行沟槽216的形成和基板200的纹理化时，沟槽216的形成与基板200的纹理化之间不进行固化操作。这样的固化操作可以包括加热操作、暴露于红外线(IR)辐射或暴露于紫外线(UV)辐射。
参见流程图300的操作318和对应的图2H，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括移除多个固态p型掺杂剂源区域206。在一个实施例中，使用湿法蚀刻技术通过施加包含氢氟酸水溶液或另一种HF源的润湿溶液移除多个固态p型掺杂剂源区域206。在一个实施例中，通过等离子蚀刻移除多个固态p型掺杂剂源区域206。
参见流程图300的操作320和对应的图2I，形成背接触太阳能电池触点的方法还包括对基板200进行加热299，从而在多个p型掺杂的多晶硅区域222之中提供多个n型掺杂的多晶硅区域220。
在一个实施例中，加热基板200包括活化多个包含n型掺杂剂的多晶硅区域212中的掺杂剂，形成多个n型掺杂的多晶硅区域220。在一个实施例中，活化包括将至少一些掺杂剂的结合从间隙掺杂变成多晶硅层204内的替位掺杂。在一个具体的实施例中，活化包括提供多个具有50–300欧姆/平方范围内的低薄层电阻的n型掺杂的多晶硅区域220。
在一个实施例中，加热基板200还包括将源自多个固态p型掺杂剂源区域206的掺杂剂进一步驱入多晶硅层204，以及活化多晶硅层204中的掺杂剂，从而提供多个p型掺杂的多晶硅区域222。在一个实施例中，活化包括将至少一些掺杂剂的结合从间隙掺杂变成多晶硅层204内的替位掺杂。在一个具体的实施例中，活化包括提供多个具有50-300欧姆/平方范围内的低薄层电阻的p型掺杂的多晶硅区域222。
参见图2J，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括在多个n型掺杂的多晶硅区域220、多个p型掺杂的多晶硅区域222和基板200的暴露部分上形成介电层224。在一个实施例中，形成的介电层224的下表面与多个n型掺杂的多晶硅区域220、多个p型掺杂的多晶硅区域222和基板200的暴露部分适形形成，而介电层224的上表面基本平坦，如图2J所示。在一个具体的实施例中，介电层224为抗反射涂层(ARC)。
参见流程图300的操作322和对应的图2K，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括通过激光烧蚀形成多个通往多个n型掺杂的多晶硅区域220和多个p型掺杂的多晶硅区域222的触点开口226。在一个实施例中，通往n型掺杂的多晶硅区域220的触点开口226与通往p型掺杂的多晶硅区域222的触点开口具有实质上相同的高度，如图2K所示。
参见图2L，在一个实施例中，形成背接触太阳能电池触点的方法任选地还包括在多个触点开口226中形成导电触点228并将其耦合到多个n型掺杂的多晶硅区域220和多个p型掺杂的多晶硅区域222。在一个实施例中，导电触点228由金属构成并通过沉积、平版印刷和蚀刻方法形成。
因此，本发明公开了形成背接触太阳能电池触点的方法。根据本发明的实施例，方法包括在基板上形成薄介电层。该方法还包括在薄介电层上形成多晶硅层。该方法还包括在多晶硅层上形成并图案化固态p型掺杂剂源，该图案化暴露出在多个固态p型掺杂剂源区域之间的多晶硅层的区域。该方法还包括在多晶硅层的暴露区域和多个固态p型掺杂剂源区域上形成n型掺杂剂源层，该形成包括将掺杂剂从n型掺杂剂源层至少部分地驱入多晶硅层的暴露区域，从而在多个固态p型掺杂剂源区域之间形成多个包含n型掺杂剂的多晶硅区域。该方法还包括加热基板，以在多个p型掺杂的多晶硅区域之中提供多个n型掺杂的多晶硅区域。在一个实施例中，该方法还包括在形成n型掺杂剂源层之后以及在加热基板之前，在多个包含n型掺杂剂的多晶硅区域与多个固态p型掺杂剂源区域之间形成沟槽，该沟槽在多晶硅层中、薄介电层中以及部分基板中形成。

Claims (9)

1.一种形成背接触太阳能电池触点的方法，所述方法包括：
在基板上形成多晶硅层；
在所述多晶硅层上形成并图案化固态p型掺杂剂源，所述图案化暴露出在多个固态p型掺杂剂源区域之间的所述多晶硅层的区域；
在所述多晶硅层的暴露区域和所述多个固态p型掺杂剂源区域上形成n型掺杂剂源层，所述形成包括将掺杂剂从所述n型掺杂剂源层至少部分地驱入所述多晶硅层的暴露区域，以在所述多个固态p型掺杂剂源区域之间形成多个包含n型掺杂剂的多晶硅区域；以及，随后
加热所述基板，以在多个p型掺杂的多晶硅区域之中提供多个n型掺杂的多晶硅区域；以及
在加热之前，移除所述多个固态p型掺杂剂源区域，
所述方法，还包括：在形成n型掺杂剂源层之后以及在加热所述基板以在多个p型掺杂的多晶硅区域之中提供多个n型掺杂的多晶硅区域之前，在所述多个包含n型掺杂剂的多晶硅区域与所述多个固态p型掺杂剂源区域之间形成沟槽，所述沟槽在所述多晶硅层中以及部分所述基板中形成。
2.根据权利要求1所述的方法，还包括：
在形成所述沟槽之后以及在加热所述基板之前，对所述沟槽暴露出的所述基板部分进行纹理化。
3.根据权利要求2所述的方法，其中形成所述沟槽和所述纹理化的进行无需形成所述沟槽和所述纹理化之间的固化操作。
4.根据权利要求1所述的方法，其中形成所述n型掺杂剂源层还包括将掺杂剂从所述多个固态p型掺杂剂源区域至少部分地驱入所述多晶硅层。
5.根据权利要求4所述的方法，其中加热所述基板包括活化所述多个包含n型掺杂剂的多晶硅区域中的掺杂剂，促进驱入源自所述多个固态p型掺杂剂源区域的掺杂剂进入所述多晶硅层，以及活化所述多晶硅层中的所述多个固态p型掺杂剂源区域的掺杂剂。
6.根据权利要求1所述的方法，其中形成并图案化所述固态p型掺杂剂源包括形成并图案化硼硅酸盐玻璃(BSG)层。
7.根据权利要求1所述的方法，其中形成所述n型掺杂剂源层包括形成P2O5层。
8.根据权利要求1所述的方法，还包括：
通过激光烧蚀形成多个通往所述多个n型掺杂的多晶硅区域和所述多个p型掺杂的多晶硅区域的触点开口。
9.一种根据权利要求1的方法制造的太阳能电池。
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