CN101673776A - 具有激光烧蚀槽的指叉背接触太阳能硅电池及其制造方法 - Google Patents

具有激光烧蚀槽的指叉背接触太阳能硅电池及其制造方法 Download PDF

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CN101673776A
CN101673776A CN200910169600A CN200910169600A CN101673776A CN 101673776 A CN101673776 A CN 101673776A CN 200910169600 A CN200910169600 A CN 200910169600A CN 200910169600 A CN200910169600 A CN 200910169600A CN 101673776 A CN101673776 A CN 101673776A
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徐保民
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Abstract

具有激光烧蚀槽的指叉背接触太阳能硅电池及其制造方法，所述电池包括：衬底，具有后表面和相对的前表面；多个指叉扩散区，其形成于衬底的后表面；以及多个槽，被限定到所述衬底的后表面之中、在所述多个指叉扩散区的相邻对之间。所述方法包括：将第一掺杂剂扩散入半导体衬底的后表面，以使得所述衬底的被隔开的第一和第二扩散区具有第一掺杂浓度且从所述后表面延伸第一深度进入所述衬底，且被具有第二掺杂浓度且从所述后表面延伸第二深度进入所述衬底的第三扩散区隔开；并且形成进入所述半导体衬底的后表面的多个槽，以使得所述第一扩散区和所述第三扩散区被第一槽隔开，而所述第二扩散区和所述第三扩散区被第二槽隔开。

Description

具有激光烧蚀槽的指叉背接触太阳能硅电池及其制造方法
技术领域
本发明涉及使用光伏器件(太阳能电池)将光照转换为电能，更具体地，涉及用于生产指叉背接触(IBC)太阳能电池的方法和工具，还涉及由这些方法生产的IBC太阳能电池。
背景技术
太阳能电池通常是将太阳光直接转换成电的光伏器件。太阳能电池通常包括半导体(例如，硅)晶圆(衬底)，该半导体晶圆以形成自由电子的方式吸收光照(例如，太阳光)，继而导致自由电子在内建场的存在下流动以创建直流(DC)电。由几个太阳能电池生成的DC电可由置于电池上的栅格收集。太阳能电池通常是使用方形或准方形的硅晶圆制成，这些硅晶圆被掺杂以包括一个或多个n型掺杂区，和一个或多个p型掺杂区。这样的太阳能电池(也称为基于硅晶圆的太阳能电池)如今是在太阳能电池的商业生产中的主导技术，也是本发明的主要关注点。
一种理想的太阳能几何结构——通常称为指叉背接触电池——由诸如硅之类的半导体晶圆和交替的p型和n型掺杂的线路(指叉条纹)组成。这种电池结构的优势在于，到p区和n区的所有电接触都可以被做到晶圆的一侧。当晶圆被连接到一起进入一个模块内时，配线均已从一侧完成。用于此器件的器件结构和制造手段，已经在题为“SolarCell Production Using Non-Contact Patterning and Direct-WriteMetallization”的共同拥有和共同未决的美国专利申请No.11/336,714中描述，其以援引方式全部纳入本文。在2008年5月12日，SunPower Corp.(San Jose，CA，USA)宣称在原型IBC电池中达到了23.4％的效率。(见http://investors.sunpowercorp.com/releasedetail.cfm？ReleaseID＝309613)
IBC太阳能电池的问题是，用于生产IBC电池的常规制造过程相当复杂，且因此与生产常规“H-图案”太阳能电池所需的制造过程相比更为昂贵。根据D.H.Neuhaus和A.Munzer发表的“IndustrialSilicon Wafer Solar Cells”(Advances in Optoelectronics，2007卷，第1-15页，2007年)，IBC电池需要17个处理步骤(最少)，来完成电池制造过程，而常规的H-图案太阳能电池仅需要9个步骤。
所需要的是一种生产IBC型太阳能电池的方法，其通过降低生产成本和复杂度克服了常规生产方法的缺陷，从而IBC型太阳能电池可以用基本相等于或低于常规H-图案太阳能电池的成本来生产。
发明内容
本发明涉及制造IBC太阳能电池的方法，其包括将磷和硼扩散过程结合起来，其中可丝网印刷的或旋涂掺杂剂硼源被沉积在晶体硅衬底的后表面之上，然后扩散磷掺杂剂以使得所述硼源用作磷扩散的扩散阻挡层，以防止p+和n+扩散区的交叉掺杂。在扩散过程之后，p+和n+扩散区通过激光烧蚀隔开，在后表面中、在相邻的p+和n+扩散区之间形成槽。由此产生的制造过程将处理步骤的数量减少了大约一半(与常规方法相比)，并且有助于以当前生产“H-图案”太阳能电池所需的成本相同(或更低)的成本生产IBC太阳能电池。
一种IBC太阳能电池，包括：衬底，具有后表面和相对的前表面；多个指叉扩散区，其形成于衬底的后表面，所述多个指叉扩散区包括：具有第一掺杂浓度且从所述后表面延伸第一深度进入所述衬底的第一扩散区和第二扩散区，以及具有第二掺杂浓度且从所述后表面延伸第二深度进入所述衬底的第三扩散区，所述第三扩散区被置于所述第一扩散区和所述第二扩散区之间；以及多个槽，被限定到所述衬底的后表面之中、在所述多个指叉扩散区的相邻对之间，以使得所述第一扩散区和所述第三扩散区被第一槽隔开，而所述第二扩散区和所述第三扩散区被第二槽隔开，其中所述多个槽的每一个具有从所述后表面起进入所述衬底的第三深度，该第三深度大于所述第一深度和第二深度。优选地，所述多个槽的每一个的深度处于0.5μm至1.5μm的范围内，且其中所述多个槽的每一个具有处于1μm至10μm范围内的宽度。优选地，该IBC太阳能电池还包括形成于所述衬底的前表面中的第四扩散区，所述第四扩散区具有第二掺杂浓度，且从所述后表面延伸第二深度进入所述衬底。优选地，该IBC太阳能电池还包括置于所述衬底的后表面上的钝化层，其中所述钝化层包括分别置于所述多个槽的每一个中的部分。优选地，该IBC太阳能电池还包括延伸穿过所述钝化层的多个金属接触，其中每个所述金属接触与所述多个扩散区中的相应一个邻接。
一种制造IBC太阳能电池的方法，所述方法包括：将第一掺杂剂扩散入半导体衬底的后表面，以使得所述衬底的被隔开的第一和第二扩散区具有第一掺杂浓度且从所述后表面延伸第一深度进入所述衬底，且被具有第二掺杂浓度且从所述后表面延伸第二深度进入所述衬底的第三扩散区隔开；并且形成进入所述半导体衬底的后表面的多个槽，以使得所述第一扩散区和所述第三扩散区被第一槽隔开，而所述第二扩散区和所述第三扩散区被第二槽隔开。优选地，所述将第一掺杂剂扩散包括：将所述第一掺杂剂的被隔开的块沉积到所述衬底的后表面、在所述第一扩散区和所述第二扩散区上；并且加热所述衬底，以使得所述第一掺杂剂的一部分穿过所述后表面扩散入所述第一扩散区和所述第二扩散区，其中所述第三扩散区的第二掺杂浓度在所述加热期间保持所述第二掺杂浓度。优选地，将所述第一掺杂剂的被隔开的块沉积，包括以下之一：将所述第一掺杂剂挤压、丝网印刷、移印或喷墨印刷到所述后表面上。优选地，所述第一掺杂剂包括硼，且加热包括：在所述后表面上、在所述第一扩散区和所述第二扩散区上形成硼硅酸盐玻璃。优选地，该方法还包括，在形成所述硼硅酸盐玻璃以后，将n型掺杂剂扩散到所述第三扩散区中，以使得所述硼硅酸盐玻璃阻止所述n型掺杂剂扩散到所述第一扩散区和所述第二扩散区之中。优选地，所述将n型掺杂剂扩散，包括将所述衬底置于包含了POCl3、处于900℃以下的温度的炉中。优选地，该方法还包括，在将所述第一掺杂剂材料扩散入所述第一扩散区和所述第二扩散区之后，将第二掺杂剂材料扩散入所述第三扩散区以使得所述第一扩散区和所述第二扩散区中的第一掺杂剂用作扩散阻挡层，从而所述第三扩散区获得了由所述第二掺杂剂材料确定的第三掺杂浓度，且所述第一扩散区和所述第二扩散区保持所述第一掺杂浓度。优选地，在所述衬底的后表面上形成多个槽，包括选择性地激光烧蚀所述衬底的后表面。优选地，在所述衬底的后表面上形成多个槽，包括选择性地化学蚀刻所述衬底的后表面。
附图说明
参照以下说明书、所附权利要求和附图，本发明的这些和其他特征、方面和优点将变得更易理解，其中：
图1是示出了根据本发明的一个实施方案的部分制造好的IBC太阳能电池的立体图；
图2是示出了处于基本完成状态的、图1的IBC太阳能电池的剖面侧视图；
图3是示出了根据本发明的另一个实施方案的制造IBC太阳能电池的一种方法的流程图；而
图4(A)、4(B)、4(C)、4(D)、4(E)、4(F)、4(G)、4(H)、4(I)、4(J)和4(K)是在图3的制造过程的各个不同阶段期间的IBC太阳能电池的剖面侧视图。
具体实施方式
本发明涉及在可用于例如将太阳能转换成电能的光伏器件中的改进。提供了下文的说明，以使本领域普通技术人员能够按照特定应用及其需求的上下文中所规定的来制造和使用本发明。如本说明书中所用的，方向术语诸如“上”、“下”、“侧”、“前”、“后”和“竖直”均意为为了说明目的而提供相对位置，且不意为表示一个绝对的参照系。对优选实施方案的各种不同修改对于本领域技术人员来说将是显而易见的，而本说明书限定的一般原理可应用于其他实施方案。因此，本发明并不意为限于所示和所述的特定实施方案，而应符合与本说明书所公开的原理和新特征相一致的最宽的范围。
图1是局部立体图而图2是剖面侧视图，示出了根据本发明的一个实施方案的简化了的IBC太阳能电池100。本领域技术人员将意识到，图1和图2被简化为仅仅显示几个扩散线，并且利用失真的比例尺，以突出本发明的关键特征。
参见图1，IBC太阳能电池100形成于具有后表面103和相对的前表面105的半导体硅(Si)晶圆(衬底)101上。衬底101包括在图1中以阴影示出的若干扩散区，而衬底101的无阴影区示出了标准的半导体硅。在一个实施方案中，半导体硅是具有介于0.1到2000Ω·cm之间的电阻率的n型单晶晶圆，但也可使用其他类型的硅材料，诸如p型单晶硅晶圆，以及n型或p型多晶硅晶圆。与常规IBC太阳能电池相似，IBC太阳能电池100包括在后表面103中形成的多个指叉(平行、间隔开)扩散区101-11至101-14以及101-21至101-23，以及在前表面105中形成的连续的覆盖(第四)扩散区101-3。第一组扩散区101-11至101-14包括p型掺杂剂(例如，硼)，该p型掺杂剂具有介于20到200Ω/平方之间的薄层电阻，而第二组扩散区101-21至101-23包括n型掺杂剂(例如，磷)，该n型掺杂剂具有介于20到200Ω/平方之间的薄层电阻。p型掺杂剂被扩散到衬底101之中，以使得扩散区101-11到101-14具有介于0.1μm到5μm之间的标称深度D1——如图1所示从后表面103量起，且具有处于100μm到3000μm范围内的宽度W1。n型掺杂剂被扩散到衬底101之中，以使得扩散区101-21到101-23具有0.1μm到5μm的标称深度D2——如图1所示从后表面103量起，且具有处于10到500μm范围内的宽度W2。扩散区被布置为使得第二组扩散区101-21到101-23中每一个都置于第一组的相应一对扩散区之间。例如，(第三)n+扩散区101-22被置于(第一)p+扩散区101-12和(第二)n+扩散区101-13之间。
根据本发明的一方面，一系列槽107-1至107-6被限定到后表面103之中，在扩散区的相邻对之间。槽107-1到107-6代表了在后表面103中、在衬底材料从相邻的扩散区之间移去处的细长的空隙或开口。例如，p+扩散区101-12和n+扩散区101-22被(第三)槽107-3隔开，而p+扩散区101-13和n+扩散区101-22被槽107-4隔开。107-1到107-6中的每个槽均具有(第三)深度D3(例如，优选地在0.2μm至10μm范围内，且更优选地在0.5μm至1.5μm范围内)，D3从后表面103延伸入衬底101，且大于深度D1和D2，从而每对相邻扩散区均被相应的槽物理地彼此隔开(例如，扩散区101-12和101-22被槽107-3隔开)。
根据本发明的另一方面，槽107-1到107-6被形成为以使得每个扩散区在两个相邻的相关联的槽的相应的(竖直的)侧壁之间连续延伸。也就是说，每个槽具有被介于相对的竖直侧壁之间的距离所限定的宽度W3(也即，优选地处于1μm至50μm范围内，且更优选地处于1μm至10μm范围内)(例如，槽107-1具有在侧壁SW11和SW12之间量得的宽度W3)。每个扩散区均在相邻槽的相关联的侧壁之间延伸。例如，扩散区101-12在槽107-4的侧壁SW42和槽107-5的侧壁SW51之间延伸。如下文所述，形成槽107-1至107-6，以使得在侧壁SW42和SW51之间的整个区至深度D1均具有p型掺杂剂(例如硼)，其形成了扩散区101-13。
IBC太阳能电池100，在图2中以基本完成的状态示出，其中表面钝化层120-1(例如SiNx、SiCx、SiO2、SiO2/SiNx之一，或任何其他适合的介电材料)形成于后表面103上，而抗反射层120-2(例如SiNx、TiO2或任何其他适合的介电材料)形成于前表面105上，从而扩散区101-11至101-14、101-21至101-23以及101-3均被这些相应的层保护。根据本发明的另一方面，槽107-1至107-6被形成为使得钝化层120-1的部分被相应地置于每个槽之中。金属接触130-11至130-14(例如，AgAl)延伸穿过钝化层120-1且分别连接到p+扩散区101-11和101-14，而金属接触130-21至130-23(例如，Ag)延伸穿过钝化层120-1且分别连接到n+扩散区101-21和101-23。
图3是示出了根据本发明的另一个实施方案制造IBC太阳能电池的一种方法的流程图。图4(A)至4(K)是示出了图3的过程的简化的剖面侧视图。
参见图3顶部(方框205)和图4(A)，硅晶圆101被湿处理，以有助于在后表面103和前表面105上的表面纹理化和清洁。
接下来，参见图3的方框210和图4(B)，然后将p型掺杂剂源(例如，可印刷硼浆料)成条带状地沉积在后表面103上，这些条带具有在100μm至3000μm范围内且更优选地在1000μm至1200μm范围内的宽度，并具有10μm至500μm范围内的且更优选地在200μm至300μm范围内的间隔。在一个实施方案中，p型掺杂剂源的沉积包括挤压过程，诸如在共同拥有且共同未决的美国专利申请No.20080138456，题为“Solar Cell Fabrication Using Extruded Dopant-BearingMaterials”中所描述的，该专利申请以援引方式全部纳入本文。在另一个实施方案中，p型掺杂剂源的沉积过程包括公知的印刷过程，诸如丝网印刷、移印或喷墨印刷。如图4(B)所示，所产生的掺杂剂材料块210-1至210-4被分别置于区101-11A至101-14A上，这些区在此时间点基本未被掺杂。然后执行干燥过程，以在扩散之前使掺杂剂材料干燥。
参见图3的方框220以及图4(C)，然后通过将衬底101放置到预热的POCl3炉中，同时POCl3源关闭，炉温度达900-950℃，以促进硼扩散穿过后表面103，来执行将硼扩散到衬底101中的过程，从而形成了扩散区101-11B至101-14B。此外，根据本发明的另一方面，在硼扩散过程中的温度被选择为，使得硼源材料在后表面103上、在扩散区101-11B至101-14B上形成硼硅酸盐玻璃层210-1A至210-4A。注意，在硼扩散过程之后，扩散区101-11B至101-14B均被基本未掺杂区101-21A至101-23A所隔开。
参见图3的方框225以及图4(D)，然后通过将POCl3炉从硼扩散温度(也即，900至950℃)冷却到处于850至900℃范围内的温度，且然后以足以达到本文所描述的磷掺杂型面(profile)的速率接通POCl3，来实现将磷(n型掺杂剂)扩散到衬底101的过程。如图4(D)所示，磷(虚线箭头所指示)穿过前表面105进入衬底101，以及穿过后表面103的暴露部分，从而形成了n型扩散区101-21B至101-23B以及101-3。根据本发明的一方面，硼硅酸盐玻璃层210-1A至210-4A在磷扩散过程中用作扩散阻挡层，以防止磷扩散到扩散区101-11B至101-14B之中。发明人认为，通过将炉温度降低到900℃以下，在硼扩散期间形成的硼硅酸盐即可有效地用作磷扩散的阻挡层。注意，在图4(D)所示的磷扩散过程的末尾，每个相邻的扩散区都与其相邻的扩散区邻接(例如，扩散区101-12B在界面IF1处与扩散区101-22B邻接，而扩散区101-22B在界面IF2处与扩散区101-13B邻接)。
参见图3的方框230和图4(E)，然后槽107-11至107-16在后表面103中、在相邻扩散区之间的每个界面处形成，从而每个槽隔开了相邻的p+和n+扩散区对。根据本发明的一方面，槽形成过程是通过激光烧蚀实现的，激光烧蚀使用了诸如Q开关固态激光器——其具有诸如从10μJ到大约300μJ范围内的脉冲能量，从而槽被形成为具有大约在0.5μm至5μm范围内的深度以及5μm至50μm范围内的宽度。
参见图3的方框240和图4(F)，然后执行玻璃移除，以将剩余的硼硅酸盐玻璃块120-11至120-14(在图4(E)中示出)移除。在一个实施方案中，玻璃移除是根据已知技术诸如酸湿蚀刻使用湿化学溶剂执行的。
如图3(方框250和255)中和图4(G)与4(H)中所示，根据诸如PECVD或溅射法(sputtering)之类的已知技术，在PECVD反应器中将SiNx抗反射层120-3沉积在前表面105上、扩散区101-3上，将表面钝化层(例如，SiNx，SiCx，SiO2/SiNx)沉积在后表面103上。
参见图3的下部以及图4(I)和图4(J)，AgAl浆料部分130-11A至130-14A分别置于p+扩散区101-11至101-14上的钝化层120-1上(方框260和图4(I))，而Ag浆料部分130-21A至130-23A分别置于n+扩散区101-21至101-23上的钝化层120-1上(方框265和图4(J))。在替代性的实施方案中，使用例如丝网印刷或挤压，同时把Ag浆料既沉积在p+扩散区101-11至101-14中，也沉积在n+扩散区101-21至101-23中，从而消除了一个处理步骤，将整个制造过程减少到十个步骤。在浆料沉积之后(见图3的方框270和图4(K))，衬底101在带式炉中加热，以引起金属镀，从而穿过钝化层120-1到p+扩散区101-11至101-14形成了金属接触130-11至130-14，以及穿过钝化层120-1到n+扩散区101-21至101-23形成了金属接触130-21至130-23。
本发明的优点之一在于，IBC太阳能电池100(图1)可仅以10个处理步骤制造，这比常规IBC电池制造过程(也即，如D.H.Neuhaus和A.Munzer在“Industrial Silicon Wafer Solar Cells”(Advancesin Optoelectronics，vol.2007，pp.1-15，2007)中所描述的)少了7个步骤，且仅比通常用于制造常规“H-图案”太阳能电池的制造过程多一个步骤。此外，因为本发明允许形成IBC电池，所以模块组装的成本——其占了太阳能电池模块总成本的30％至35％——与常规“H-图案”电池模块相比降低了最多达30％，根据E.V.Kerschaver和G.Beaucarne在“Back-contact Solar Cells：Review”(Progress inPhotovoltaics：Research and Applications，vol.14，pp.107-123，2006)所述，表明在模块总成本中能够降低9.0％至10.5％。此外，因为对于IBC电池可大幅度降低或消除晶圆弯曲——晶圆弯曲通常是由在常规“H-图案”电池的整个后表面上沉积铝浆料并形成铝BSF(背表面场)所导致的，所以使用薄硅晶圆生产IBC太阳能电池将更为容易，这也将降低硅材料的成本。由于在模块组装和硅材料上的成本降低，本发明(其与常规“H-图案”电池相比仅有轻微的处理成本增加)与常规电池相比，即便没有提高效率，也将最终使得成本降低了最高达大约20％。此外，潜在地实现了达30％的成本降低，因为，大体上，IBC电池具有比常规“H-图案”电池更高的效率。成本/效率分析在表1(如下)提供。
表1：成本和效率分析
  基数   无处理   高η   更多η   PARC I   PARC II
  硅   100   100   100   100   75   75
  处理   100   0   100   100   120   120
  模块   100   100   100   100   70   70
  效率(％)   17.0   17.0   20.0   24.3   17.0   19.4
  功率(W)   4.14   4.14   4.87   5.91   4.14   4.73
  $/W   2.50   2.13   2.12   1.75   2.00   1.75
  成本降低   NA   15％   15％   30％   20％   30％
如表1中最左列所示，基准过程具有硅材料、处理和模块的成本。每种成本占了整体模块成本的50％、15％和35％。基准过程具有100％的硅材料成本、100％的处理成本和100％的模块组装成本，这导致了整体制造成本为$2.50/W。同样，电池/模块效率被假定为17％。下一个成本分析(左起第二列)，研究了不经任何处理的制造成本。因此，处理成本是0％。假定该模块可产生17％的效率，制造成本是$2.13/W，这代表着15％的成本降低。本发明的主要目标就是达到30％的成本降低，因此“无处理”选项是不够的。下一个成本分析，分析了高效率模块——20％——的影响。假定20％效率模块的生产与基准过程相比未增加任何处理，则此选项将产生$2.12/W的制造成本，这代表着15％的成本降低。20％效率模块不能产生足够的成本降低。因此，下一个步骤就是分析更高的电池效率——24.3％——对成本的影响。这个更高效率的模块产生了制造成本$1.75/W，这代表着30％的成本降低。然而，达到24.3％，却与基准过程相比不增加任何处理，这相当困难。下一个步骤，PARC I，是使用所提出的器件装配技术的成本分析的结果。我们提出的IBC电池将能够采用100μm至150μm厚度的薄硅晶圆。因此，硅材料的成本降低到了其最初值的75％。电池处理需要硼扩散、激光烧蚀以及校准/配准处理。所以，假设处理成本增加了20％。如前段所讨论，模块组装的成本降低到其最初值的70％，因为IBC结构提供了更简单的模块组装处理。假设电池/模块效率未改变(17％)，制造成本将为$2.00/W，这代表了20％的成本降低。为了用所提出的IBC电池达到30％的成本降低，电池/模块效率需要从17.0％提高到19.4％，而这对于IBC电池是很实际的。因此，如表1所示，本发明使得IBC太阳能电池的生产与常规“H-图案”电池相比(假设效率相同)具有最终成本降低最多达大约20％，且当考虑到IBC太阳能电池的更高效率时具有成本降低30％或更多。
虽然已经参照某些特定实施方案描述了本发明，但对本领域普通技术人员而言清楚的是，本发明的创造性特征同样适用于其他实施方案，所有这些实施方案均意为落入本发明的范围之内。例如，虽然上文参考n型硅衬底描述了本发明，但也可能以p型硅衬底开始。在此情况下，硼源的宽度可以在大约10μm至500μm范围内，且更优选地在200μm至300μm范围内，而间隔将在100μm至3000μm范围内，且更优选地在1000μm至1200μm范围内。此外，本发明不一定限于使用硼和磷作为掺杂剂(除非在权利要求中有所说明)，且意为扩充到显示出本说明书所描述的扩散阻挡层特性的任何其它掺杂剂，诸如镓(Ga)和砷(As)。另外，形成槽以隔开p+和n+扩散区，不一定限于激光烧蚀，也可延伸到能够产生本说明书所描述的槽的任何适当的方法。例如，槽也可以通过使用利用在衬底的后表面上印刷或挤压蚀刻浆料之类的选择性化学蚀刻方法而制成。

Claims (10)

1.一种IBC太阳能电池，包括：
衬底，具有后表面和相对的前表面；
多个指叉扩散区，其形成于衬底的后表面，所述多个指叉扩散区包括：具有第一掺杂浓度且从所述后表面延伸第一深度进入所述衬底的第一扩散区和第二扩散区，以及具有第二掺杂浓度且从所述后表面延伸第二深度进入所述衬底的第三扩散区，所述第三扩散区被置于所述第一扩散区和所述第二扩散区之间；以及
多个槽，被限定到所述衬底的后表面之中、在所述多个指叉扩散区的相邻对之间，以使得所述第一扩散区和所述第三扩散区被第一槽隔开，而所述第二扩散区和所述第三扩散区被第二槽隔开，
其中所述多个槽的每一个具有从所述后表面起进入所述衬底的第三深度，该第三深度大于所述第一深度和第二深度。
2.根据权利要求1所述的IBC太阳能电池，其中所述第一扩散区和所述第二扩散区包括p型掺杂剂，其中所述第三扩散区包括n型掺杂剂。
3.根据权利要求1所述的IBC太阳能电池，其中所述衬底包括n型衬底。
4.根据权利要求1所述的IBC太阳能电池，其中所述衬底包括p型衬底。
5.根据权利要求1所述的IBC太阳能电池，其中所述多个槽的每一个的深度处于0.2μm至10μm的范围内，且其中所述多个槽的每一个具有处于1μm至50μm范围内的宽度。
6.一种制造IBC太阳能电池的方法，所述方法包括：
将第一掺杂剂扩散入半导体衬底的后表面，以使得所述衬底的被隔开的第一和第二扩散区具有第一掺杂浓度且从所述后表面延伸第一深度进入所述衬底，且被具有第二掺杂浓度且从所述后表面延伸第二深度进入所述衬底的第三扩散区隔开；并且
形成进入所述半导体衬底的后表面的多个槽，以使得所述第一扩散区和所述第三扩散区被第一槽隔开，而所述第二扩散区和所述第三扩散区被第二槽隔开。
7.一种制造IBC太阳能电池的方法，所述方法包括：
将第一掺杂剂扩散到半导体衬底的后表面，以使得所述衬底的被隔开的所述第一扩散区和所述第二扩散区具有第一掺杂浓度且从所述后表面延伸第一深度进入所述衬底，且被具有第二掺杂浓度且从所述后表面延伸第二深度进入所述衬底的第三扩散区隔开；以及
将第二掺杂剂扩散到所述第三扩散区中，以使得所述第一掺杂剂阻止所述第二掺杂剂扩散到所述第一扩散区和所述第二扩散区中。
8.根据权利要求7所述的方法，其中所述将第一掺杂剂扩散包括：
将含硼材料的被间隔开的块沉积到所述衬底的后表面上、在所述第一扩散区和所述第二扩散区上；以及
加热所述衬底，以使得所述硼的第一部分穿过所述后表面扩散到所述第一扩散区和所述第二扩散区中，而所述硼的第二部分在所述后表面上、在所述第一扩散区和所述第二扩散区上形成硼硅酸盐玻璃。
9.根据权利要求8所述的方法，还包括：
在形成所述硼硅酸盐玻璃后，将所述衬底置于包含POCl3的炉中，所述炉处于一温度，该温度被选择为使得磷被扩散到所述第三扩散区中且所述硼硅酸盐玻璃阻止所述n型掺杂剂扩散到所述第一扩散区和所述第二扩散区中。
10.根据权利要求7所述的方法，还包括在所述衬底的后表面中形成多个槽，以使得所述第一扩散区与所述第三扩散区被第一槽隔开，而所述第二扩散区与所述第三扩散区被第二槽隔开。
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CN108777263A (zh) * 2011-02-15 2018-11-09 太阳能公司 太阳能电池
CN102842646A (zh) * 2012-05-30 2012-12-26 浙江晶科能源有限公司 一种基于n型衬底的ibc电池的制备方法
CN103579407A (zh) * 2012-07-26 2014-02-12 聚日（苏州）科技有限公司 一种太阳能电池及其制造方法
CN102832270A (zh) * 2012-08-16 2012-12-19 友达光电股份有限公司 太阳能电池及其制作方法
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