CN201812825U - 具有形成的发射极的前触点太阳能电池 - Google Patents

具有形成的发射极的前触点太阳能电池 Download PDF

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CN201812825U
CN201812825U CN2009901000868U CN200990100086U CN201812825U CN 201812825 U CN201812825 U CN 201812825U CN 2009901000868 U CN2009901000868 U CN 2009901000868U CN 200990100086 U CN200990100086 U CN 200990100086U CN 201812825 U CN201812825 U CN 201812825U
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彼得·约翰·卡曾斯
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Abstract

一种太阳能电池，其具有在正常操作期间面对太阳以收集太阳辐射的正面和与该正面相反的背面。该太阳能电池(100)包括：N型硅衬底(101)；所述太阳能电池(100)正面上的所述N型硅衬底上的粗糙表面(113)；N型硅衬底的粗糙表面(113)上的抗反射层(103)；与N型硅衬底(101)形成背面结的P型多晶硅发射极(108)；从所述太阳能电池(100)正面电连接至N型硅衬底(101)的负极性金属触点(102)；以及从所述太阳能电池(100)背面电连接至P型多晶硅发射极(108)的正极性金属触点(110)。

Description

具有形成的发射极的前触点太阳能电池 
技术领域
一般而言，本发明涉及太阳能电池，更具体地，本发明涉及但不仅仅涉及太阳能电池的制造工艺和结构。 
背景技术
太阳能电池是已知的用于将太阳辐射转换为电能的装置。可以使用半导体加工技术将太阳能电池制造在半导体晶片上。太阳能电池包括形成结的P型和N型扩散区。入射到太阳能电池上的太阳辐射产生电子和空穴，所述电子和空穴转移至扩散区，从而在扩散区之间产生电压差。在背面触点太阳能电池中，扩散区和耦接至扩散区的金属触点均在太阳能电池的背面。所述金属触点允许外部电路耦接至太阳能电池，并且允许外部电路由太阳能电池供电。 
在前触点太阳能电池中，电连接到扩散区的金属触点中的至少一个在太阳能电池的正面。所述太阳能电池的正面与所述背面相反，其在正常操作期间面对太阳来收集太阳辐射。但是，由于背面触点太阳能电池的正面上不存在金属触点，因此背面触点太阳能电池相对于前触点太阳能电池来说具有美感优势，并且因此，背面触点太阳能电池优选地用于住宅应用，而对于发电量为主要关注点的发电厂和其他应用，美感则不是主要要求。本申请公开了相对高效且成本低的前触点太阳能电池的结构和制造该前触点太阳能电池的工艺。 
发明内容
一种太阳能电池，其具有在正常操作期间面对太阳以收集太阳辐射的正面和与该正面相反的背面。该太阳能电池包括：N型硅衬底； 
所述太阳能电池正面上的所述N型硅衬底上的粗糙表面；N型硅衬底的粗糙表面上的抗反射层；与N型硅衬底形成背面结的P型多晶 硅发射极；从所述太阳能电池正面电连接至N型硅衬底的负极性金属触点；以及从所述太阳能电池背面电连接至P型多晶硅发射极的正极性金属触点。 
一种太阳能电池，其具有在正常操作期间面对太阳以收集太阳辐射的正面和与该正面相反的背面。该太阳能电池包括：衬底，其具有粗糙的前表面；发射极层，其形成在所述衬底的后表面上，所述发射极层与所述衬底形成背面结；第一金属触点，其电连接至所述太阳能电池正面上的所述衬底；第二金属触点，其电连接至所述太阳能电池背面上的所述发射极层，所述第一金属触点和所述第二金属触点都被配置为允许外部电路由所述太阳能电池供电。 
通过阅读包括附图和权利要求的本公开的整体，本发明的这些和其他特征对于本领域普通技术人员来说将清楚。 
附图说明
图1简要示出了根据本发明的一个实施例的太阳能电池的截面。 
图2是简要示出了图1所示太阳能电池的正面的平面图。 
图3是简要示出了图1所示太阳能电池的背面的平面图。 
图4(包括图4A至图4M)简要示出了根据本发明的一个实施例的图1所示太阳能电池的制造。 
不同图示中所使用的相同参考标号指示相同或相似的部件。所述图示并非按比例绘制。 
具体实施方式
在本发明的公开中，提供许多具体细节(例如，设备、工艺参数、材料、工艺步骤、以及结构的示例)以提供对本发明的实施例的全面理解。但是，本领域普通技术人员可以理解的是，本发明可以在不具有一个或多个具体细节的情况下实施。还有一些已知的细节未被示出或描述，以避免使本发明的方面变得不明显。 
图1简要示出了根据本发明的一个实施例的太阳能电池100的截面。太阳能电池100具有金属触点102坐落的正面和与所述金属触 点110在同一侧的背面。在正常操作期间，所述正面面对太阳来收集太阳辐射。 
在图1所示的示例中，太阳能电池100包括由用作P型扩散区的P型掺杂多晶硅发射极108和用作N型扩散区的N型硅衬底101形成的背面结。所述N型硅衬底101可以包括长寿命(例如，2至5ms)N型硅晶片，并且从背面表面至衬底的粗糙正面表面的顶部所测量的厚度约为100至250μm。所述衬底101的正面表面为任意粗糙的(如标号113所示)，并且包括形成在衬底中的N型掺杂区105和106。所述N型掺杂区105提供了较低的前表面复合，并且在不损害太阳能电池的蓝光响应的同时改进了横向电导率。可以是磷扩散的区域106提供了较低的触点电阻，并且使触点复合最小化。区域106还可以被称为“N型点”，这是因为，在一个实施例中，其形成点形以使前表面上的重扩散区的面积最小化。N型掺杂区105可以具有100至500Ω/sq的薄层电阻，而N型掺杂区106可以具有10至50Ω/sq的薄层电阻。 
在衬底101的粗糙的正面表面上形成氮化硅层103的抗反射涂层(ARC)。粗糙的正面表面和氮化硅层103有助于改进太阳辐射收集效率。钝化氧化物124可以包括二氧化硅，其在衬底101的正面表面上热生长至约10至250埃的厚度。 
在一个实施例中，多晶硅发射极108形成在隧道氧化物层107上。可以通过使用诸如低压CVD(LPCVD)或等离子体增强CVD(PECVD)之类的化学气相沉积(CVD)和热退火形成多晶硅层来形成多晶硅发射极108。所述多晶硅发射极108可以具有100Ω/sq的薄层电阻，其厚度为1000至2000埃。所述隧道氧化物层107可以包括二氧化硅，其在衬底101的背面表面上热生长至约10至50埃的厚度。金属触点110通过接触孔123电连接至多晶硅发射极108，所述接触孔123穿过包括二氧化硅层109的电介质而形成。金属触点110提供正极性接线端，以允许外部电路耦接至该金属触点并由太阳能电池100供电。二氧化硅层109提供电绝缘，并允许金属触点110作为红外线反射层来增强太阳辐射收集。在一个实施例中，金属触点110 包括电导约为5至25mΩ.cm并且厚度约为15至35μm的银。 
在太阳能电池100的正面，金属触点102通过接触孔120电连接至N型掺杂区106，所述接触孔120穿过氮化硅层103形成。金属触点102提供负极性接线端，以允许外部电路耦接至该金属触点并由太阳能电池100供电。在一个实施例中，金属触点102包括具有约为5mΩ.cm的薄层电阻并且厚度约为15μm的银。相邻金属触点102之间的间距可以为约1至4mm。在一个实施例中，金属触点102沿每个金属触点102间隔400至1000μm(参见图2)。 
在图1的示例中，通过二氧化硅层109、多晶硅发射极108、以及衬底101的部分形成边缘隔离槽111，以提供边缘电绝缘。 
图2是简要示出太阳能电池100的正面的平面图。在图2所示的示例中，衬底101的正面上的两条母线201并行。其中形成有金属触点102的接触孔120可形成为每个具有约50至200μm的直径。垂直于母线201形成多个金属触点102。每个金属触点102可具有约60至120μm的宽度。 
图3是简要示出太阳能电池100的背面的平面图。在图3所示的示例中，背面上电耦接至金属触点110的两条母线301并行。实际上，母线201和301都将电耦接至相邻太阳能电池的相应母线，以形成太阳能电池阵列。 
太阳能电池作为一种可再生能源已得到能源消费者的广泛认可。然而，为了与其他能源兼容，太阳能电池制造商必须可以制造相对低成本的高效太阳能电池。鉴于该目的，此处参考图4A至图4M来讨论用于制造太阳能电池100的工艺。 
包括图4A至图4M的图4简要示出了根据本发明的一个实施例的太阳能电池100的制造。 
在图4A中，通过经历损伤蚀刻步骤来制备N型硅衬底101，以用于加工成太阳能电池。在该示例中，衬底101为晶片的形式，并且由于晶片厂商使用锯开处理来将衬底101从其坯料切下，因此所获得的衬底101通常具有损伤的表面。从晶片厂商所获得的衬底101可以为约100至200微米的厚度。在一个实施例中，所述损伤蚀刻步骤涉 及使用包括氢氧化钾的湿蚀刻工艺来从衬底101的每侧移除约10至20μm。所述损伤蚀刻步骤还可以包括对衬底101进行清洗以消除金属污染。 
在图4B中，分别在衬底101的前表面和后表面上形成隧道氧化物402和107。所述隧道氧化物402和107可以包括二氧化硅，其在N型硅衬底101的表面上热生长至约10至50埃的厚度。接着，在所述隧道氧化物402和107上形成多晶硅层，以分别形成多晶硅层401和多晶硅发射极108。多晶硅层401和多晶硅发射极108中的每一个都可以通过CVD形成为约1000至2000埃的厚度。 
在图4C中，在多晶硅发射极108上形成P型掺杂剂源461。如其名称所示，P型掺杂剂源461提供用于在随后的掺杂剂驱入(drive-in)步骤中扩散到多晶硅发射极108中的P型掺杂剂源。在P型掺杂剂源461上形成电介质覆盖层462，以防止掺杂剂在所述驱入步骤中逸出太阳能电池的背面。在一个实施例中，P型掺杂剂源包括通过大气压CVD(APCVD)沉积为厚度约500至1000埃的BSG(硼硅玻璃)，并且具有重量比5％至10％的掺杂剂浓度，而覆盖层462包括也通过APCVD形成为厚度约2000至3000埃的无掺杂二氧化硅。 
在图4D中，在背面上的衬底101的边缘附近形成边缘隔离槽111。所述边缘隔离槽111相对较浅(例如，深入衬底101中10μm)并且提供边缘电绝缘。在一个实施例中，通过使用激光贯通覆盖层462、P型掺杂剂源461、多晶硅发射极108、隧道氧化物107进行切割并进入衬底101的较浅部分来形成边缘隔离槽111。 
在图4E中，衬底101的前表面上的暴露区为任意粗糙的，以形成粗糙表面113。在一个实施例中，通过使用包括氢氧化钾和异丙醇的湿蚀刻工艺来使衬底101的前表面以任意锥形变粗糙。 
在图4F中，在粗糙表面113的区域上形成N型掺杂剂源412，在该区域中随后将形成接触孔120(参见图1)，以允许随后形成的金属触点102电连接至衬底101。如其名称所示，N型掺杂剂源412提供用于扩散至衬底101的正面中的N型掺杂剂源。在一个实施例 中，通过将掺杂剂材料直接喷墨印刷在衬底101上来形成N型掺杂剂源412。 
在一个实施例中，N型掺杂剂源412包括掺杂有磷的二氧化硅。为了使说明清楚，图4F中仅示出了一个N型掺杂剂源412。实际上，具有多个点形N型掺杂剂源412，一个N型掺杂剂源412用于将要形成接触孔120的一个区域(参见图2)。这使得可以在随后执行的驱入步骤之后形成多个点形N型掺杂区106(参见图1)，此处将参考图4G讨论。 
在图4G中，执行掺杂剂驱入步骤，从而使N型掺杂剂从N型掺杂剂源412扩散至衬底101以形成N型掺杂区106、使P型掺杂剂从P型掺杂剂源461扩散至多晶硅发射极108、使N型掺杂剂扩散至衬底101的正面以形成N型掺杂区105。所述驱入步骤之后，二氧化硅层109相当于层461和462。所述驱入步骤之后，多晶硅发射极108也变为P型掺杂层。例如，可以在扩散炉中使图4G所示样本接触磷来形成N型掺杂区105。N型掺杂剂源412的使用使得对N型掺杂区106的N型扩散更容易掌握并且更集中。在所述驱入步骤期间，可以在粗糙表面113上生长薄的热二氧化硅层124。 
可以在原位执行所述驱入步骤，以对背面上的多晶硅发射极108掺杂并在正面上形成N型掺杂区105和106，结合本公开的上下文，原位即意味着在熔炉或者其他单腔或多腔处理工具中衬底101的一次人工(例如，通过制造人员)加载。在一个实施例中，在扩散炉中执行所述驱入步骤。引导所述驱入步骤的在前的一系列步骤允许原位扩散，这有助于降低制造成本。 
应该注意的是，在一些应用中，可以省略使用N型掺杂剂源412来使掺杂剂扩散至N型掺杂区106的步骤。即，在可选工艺中，可以省略图4F中N型掺杂剂源412的形成步骤。在这种情况下，在所述驱入步骤中，将通过在扩散炉中引入N型掺杂剂来对N型掺杂区105和106二者进行掺杂。本文所公开的其他工艺步骤基本保持相同。 
在图4H中，在移除N型掺杂剂源412之后，在粗糙表面113上形成氮化硅层103的抗反射涂层。除了作为抗反射涂层之外，氮化 硅层103还有利地用作电介质，使得可以在前表面上形成选择性接触，从而减小前表面的复合。例如，可通过PECVD将氮化硅层103形成为约450埃的厚度。 
在图4I中，在氮化硅层103上形成前触点掩模420，以产生限定接触孔120(参见图1)的图案421。所述前触点掩模420可以包括抗酸性有机材料(例如，抗蚀剂)并且使用印刷工艺(例如，丝网印刷或喷墨印刷)来形成。 
在图4J中，在二氧化硅层109上形成背触点掩模422，以产生限定接触孔123(参见图1)的图案423。类似于前触点掩模420，背触点掩模422可以包括使用印刷工艺形成的有机材料。 
在图4K中，在触点蚀刻步骤中，通过移除氮化硅层103和二氧化硅109的暴露部分来形成接触孔120和123。在一个实施例中，通过使用选择性蚀刻工艺来形成接触孔120，所述选择性蚀刻工艺移除氮化硅层103的暴露部分并在衬底101处停止。相同的蚀刻工艺移除二氧化硅109的暴露部分并在多晶硅发射极108处停止。在一个实施例中，所述蚀刻工艺包括BOE(缓冲氧化物蚀刻)。 
在图4L中，在二氧化硅层109上形成金属触点110，以填充接触孔123并电连接至多晶硅发射极108。可以使用印刷工艺来形成金属触点110。所述金属触点110可以包括银，其与二氧化硅层109一起形成极好的背面红外线反射器。例如，也可以将其他金属(例如，铝)用作金属触点110。 
在图4M中，在氮化硅层103上形成金属触点102，以填充接触孔120并电连接至衬底101。所述金属触点102可以包括银并且使用印刷工艺形成。 
金属触点110和102形成之后可以进行点火步骤。当将丝网印刷的银贴片用作金属触点时，可以实施点火步骤，但是当使用其他工艺或金属形成金属触点时，不能实施点火步骤。接着，可以对太阳能电池100进行直观的检查和测试。 
尽管已提供了本发明的具体实施例，但是应该理解的是，这些实施例仅用于说明的目的，而本发明并不限于此。通过阅读该公开， 许多其他实施例对于本领域普通技术人员来说显而易见。 

Claims (12)

1.一种太阳能电池，其具有在正常操作期间面对太阳以收集太阳辐射的正面和与该正面相反的背面，所述太阳能电池的特征在于包括：
N型硅衬底；
所述太阳能电池正面上的所述N型硅衬底上的粗糙表面；
N型硅衬底的粗糙表面上的抗反射层；
与N型硅衬底形成背面结的P型多晶硅发射极；
从所述太阳能电池正面电连接至N型硅衬底的负极性金属触点；以及
从所述太阳能电池背面电连接至P型多晶硅发射极的正极性金属触点。
2.根据权利要求1所述的太阳能电池，其中所述抗反射层包括氮化硅层。
3.根据权利要求1所述的太阳能电池，还包括P型多晶硅发射极上的电介质层。
4.根据权利要求3所述的太阳能电池，其中所述电介质层包括二氧化硅。
5.根据权利要求3所述的太阳能电池，还包括贯通所述电介质层和所述P型多晶硅发射极、并进入所述太阳能电池背面上的N型硅衬底的一部分的沟槽。
6.根据权利要求1所述的太阳能电池，其中所述正极性金属触点包括与电介质层形成红外线反射层的金属。 
7.根据权利要求1所述的太阳能电池，其中所述正极性金属触点包括与电介质层形成红外线反射层的银，所述电介质层包括二氧化硅。
8.根据权利要求1所述的太阳能电池，其中所述负极性金属触点包括在通到所述N型硅衬底的接触孔中形成的金属。
9.一种太阳能电池，其具有在正常操作期间面对太阳以收集太阳辐射的正面和与该正面相反的背面，所述太阳能电池的特征在于包括：
衬底，其具有粗糙的前表面；
发射极层，其形成在所述衬底的后表面上，所述发射极层与所述衬底形成背面结；
第一金属触点，其电连接至所述太阳能电池正面上的所述衬底；
第二金属触点，其电连接至所述太阳能电池背面上的所述发射极层，所述第一金属触点和所述第二金属触点都被配置为允许外部电路由所述太阳能电池供电。
10.根据权利要求9所述的太阳能电池，还包括所述衬底的粗糙的前表面上的抗反射层。
11.根据权利要求9所述的太阳能电池，其中所述衬底包括N型硅衬底，而所述发射极层包括P型掺杂多晶硅。
12.根据权利要求9所述的太阳能电池，其中所述第二金属触点包括银，其形成在二氧化硅层上。 
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594541A (zh) * 2013-10-12 2014-02-19 南昌大学 用于太阳能电池的多晶硅/单晶硅异质结结构及其制备方法
CN105655427A (zh) * 2014-11-28 2016-06-08 Lg电子株式会社 太阳能电池及其制造方法
CN106784129A (zh) * 2015-11-20 2017-05-31 上海神舟新能源发展有限公司 背发射结背面隧道氧化钝化接触高效电池的制作方法

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
WO2009118861A1 (ja) * 2008-03-27 2009-10-01 三菱電機株式会社 光起電力装置およびその製造方法
US8207444B2 (en) 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
DE102009008152A1 (de) * 2009-02-09 2010-08-19 Nb Technologies Gmbh Siliziumsolarzelle
US20110048505A1 (en) * 2009-08-27 2011-03-03 Gabriela Bunea Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve
NL2003511C2 (en) * 2009-09-18 2011-03-22 Solar Cell Company Holding B V Method for fabricating a photovoltaic cell and a photovoltaic cell obtained using such a method.
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US8796060B2 (en) * 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
TW201133905A (en) * 2010-03-30 2011-10-01 E Ton Solar Tech Co Ltd Method of forming solar cell
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
DE102010017590B4 (de) * 2010-06-25 2014-01-09 Hanwha Q.CELLS GmbH Beidseitig kontaktierte Solarzelle und Solarmodul
US8377738B2 (en) 2010-07-01 2013-02-19 Sunpower Corporation Fabrication of solar cells with counter doping prevention
US8334161B2 (en) * 2010-07-02 2012-12-18 Sunpower Corporation Method of fabricating a solar cell with a tunnel dielectric layer
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US8802486B2 (en) 2011-04-25 2014-08-12 Sunpower Corporation Method of forming emitters for a back-contact solar cell
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
LT5937B (lt) 2011-09-01 2013-05-27 Uab "Precizika - Met Sc" Puslaidininkinis elementas, turintis legiruotas p/n struktūras, ir būdas jas izoliuoti naudojant ultratrumpus ultravioletinius lazerio impulsus
US8586397B2 (en) * 2011-09-30 2013-11-19 Sunpower Corporation Method for forming diffusion regions in a silicon substrate
US9559228B2 (en) 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
US8992803B2 (en) 2011-09-30 2015-03-31 Sunpower Corporation Dopant ink composition and method of fabricating a solar cell there from
US8664015B2 (en) * 2011-10-13 2014-03-04 Samsung Sdi Co., Ltd. Method of manufacturing photoelectric device
US8822262B2 (en) * 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
JP6108858B2 (ja) * 2012-02-17 2017-04-05 株式会社半導体エネルギー研究所 ｐ型半導体材料および半導体装置
AU2013326971B2 (en) 2012-10-04 2016-06-30 Tesla, Inc. Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9812590B2 (en) 2012-10-25 2017-11-07 Sunpower Corporation Bifacial solar cell module with backside reflector
US9035172B2 (en) 2012-11-26 2015-05-19 Sunpower Corporation Crack resistant solar cell modules
US9312406B2 (en) 2012-12-19 2016-04-12 Sunpower Corporation Hybrid emitter all back contact solar cell
US8796061B2 (en) 2012-12-21 2014-08-05 Sunpower Corporation Module assembly for thin solar cells
US9530923B2 (en) * 2012-12-21 2016-12-27 Sunpower Corporation Ion implantation of dopants for forming spatially located diffusion regions of solar cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
WO2014110520A1 (en) 2013-01-11 2014-07-17 Silevo, Inc. Module fabrication of solar cells with low resistivity electrodes
NL2010116C2 (en) 2013-01-11 2014-07-15 Stichting Energie Method of providing a boron doped region in a substrate and a solar cell using such a substrate.
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
EP4092764A1 (en) 2013-04-03 2022-11-23 Lg Electronics Inc. Solar cell
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US9685571B2 (en) 2013-08-14 2017-06-20 Sunpower Corporation Solar cell module with high electric susceptibility layer
DE102013219564A1 (de) * 2013-09-27 2015-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Herstellen einer photovoltaischen Solarzelle mit einem Heteroübergang
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
KR102219804B1 (ko) * 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
KR102320551B1 (ko) * 2015-01-16 2021-11-01 엘지전자 주식회사 태양 전지의 제조 방법
JP6456279B2 (ja) * 2015-01-29 2019-01-23 三菱電機株式会社 太陽電池の製造方法
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN105097978A (zh) * 2015-09-07 2015-11-25 中国东方电气集团有限公司 一种n型背结晶体硅电池及其制备方法
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
JP6595410B2 (ja) * 2016-06-15 2019-10-23 株式会社Ｓｏｋｅｎ 噴射弁の冷却装置
CN109673170B (zh) * 2016-07-28 2022-06-10 京瓷株式会社 太阳能电池元件
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
WO2018061769A1 (ja) * 2016-09-27 2018-04-05 パナソニックＩｐマネジメント株式会社 太陽電池セルおよび太陽電池セルの製造方法
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
KR102053912B1 (ko) * 2017-09-01 2019-12-09 주식회사 한화 계면 특성이 향상된 perc 솔라셀, 솔라셀 제조 방법 및 제조 장치
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
CN109192817A (zh) * 2018-09-05 2019-01-11 浙江晶科能源有限公司 一种n型太阳能电池制备方法及n型太阳能电池
CN110277471A (zh) * 2019-05-17 2019-09-24 上海神舟新能源发展有限公司 基于晶体硅N型Poly发射结太阳能电池制作方法
CN114068730A (zh) * 2021-11-22 2022-02-18 厦门乾照光电股份有限公司 一种太阳能电池及其制作方法

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4427839A (en) * 1981-11-09 1984-01-24 General Electric Company Faceted low absorptance solar cell
US4665277A (en) * 1986-03-11 1987-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Floating emitter solar cell
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5479018A (en) * 1989-05-08 1995-12-26 Westinghouse Electric Corp. Back surface illuminated infrared detector
US5030295A (en) * 1990-02-12 1991-07-09 Electric Power Research Institut Radiation resistant passivation of silicon solar cells
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
JPH04290274A (ja) * 1991-03-19 1992-10-14 Sharp Corp 光電変換装置
US5164019A (en) * 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5356488A (en) * 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
US5266125A (en) * 1992-05-12 1993-11-30 Astropower, Inc. Interconnected silicon film solar cell array
JP3203076B2 (ja) * 1992-11-30 2001-08-27 シャープ株式会社 宇宙用シリコン太陽電池
US5360990A (en) * 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
JPH0794431A (ja) * 1993-04-23 1995-04-07 Canon Inc アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法
JPH0786271A (ja) 1993-09-17 1995-03-31 Fujitsu Ltd シリコン酸化膜の作製方法
JPH07106611A (ja) * 1993-09-29 1995-04-21 Tonen Corp Ｂｓｆ型太陽電池の製造方法
JP3158027B2 (ja) * 1995-06-21 2001-04-23 シャープ株式会社 太陽電池及びその製造方法
US5641362A (en) * 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
US5620904A (en) 1996-03-15 1997-04-15 Evergreen Solar, Inc. Methods for forming wraparound electrical contacts on solar cells
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
EP0851511A1 (en) * 1996-12-24 1998-07-01 IMEC vzw Semiconductor device with two selectively diffused regions
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
US6262359B1 (en) * 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
US6423568B1 (en) * 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US6274402B1 (en) * 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6387726B1 (en) * 1999-12-30 2002-05-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US6313395B1 (en) * 2000-04-24 2001-11-06 Sunpower Corporation Interconnect structure for solar cells and method of making same
US6333457B1 (en) * 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
DE10042733A1 (de) * 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
CA2370731A1 (en) 2001-02-07 2002-08-07 Ebara Corporation Solar cell and method of manufacturing same
JP2002270869A (ja) * 2001-03-12 2002-09-20 Shin Etsu Handotai Co Ltd 太陽電池
US20020142500A1 (en) * 2001-03-27 2002-10-03 Pietro Foglietti Ultra-thin interface oxidation by ozonated water rinsing for emitter poly structure
US6524880B2 (en) * 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
US7217883B2 (en) 2001-11-26 2007-05-15 Shell Solar Gmbh Manufacturing a solar cell with backside contacts
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
WO2005083799A1 (en) * 2004-02-24 2005-09-09 Bp Corporation North America Inc Process for manufacturing photovoltaic cells
US7838868B2 (en) * 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
CN101233260A (zh) 2004-11-10 2008-07-30 德斯塔尔科技公司 光伏衬底沉积中的压力控制系统
EP1693903B1 (en) 2005-02-18 2011-05-18 Clean Venture 21 Corporation Array of spherical solar cells and its method of fabrication
DE102005040871A1 (de) * 2005-04-16 2006-10-19 Institut Für Solarenergieforschung Gmbh Rückkontaktierte Solarzelle und Verfahren zu deren Herstellung
DE102005019225B4 (de) * 2005-04-20 2009-12-31 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie
US20070023081A1 (en) 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7339728B2 (en) * 2005-10-11 2008-03-04 Cardinal Cg Company Low-emissivity coatings having high visible transmission and low solar heat gain coefficient
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US7928317B2 (en) 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
JP4767110B2 (ja) * 2006-06-30 2011-09-07 シャープ株式会社 太陽電池、および太陽電池の製造方法
KR100880946B1 (ko) 2006-07-03 2009-02-04 엘지전자 주식회사 태양전지 및 그 제조방법
JP2008135654A (ja) * 2006-11-29 2008-06-12 Sanyo Electric Co Ltd 太陽電池モジュール
US20080173347A1 (en) 2007-01-23 2008-07-24 General Electric Company Method And Apparatus For A Semiconductor Structure
US20090159111A1 (en) 2007-12-21 2009-06-25 The Woodside Group Pte. Ltd Photovoltaic device having a textured metal silicide layer
TW200947725A (en) * 2008-01-24 2009-11-16 Applied Materials Inc Improved HIT solar cell structure
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
US8207444B2 (en) * 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
US20110132444A1 (en) 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594541B (zh) * 2013-10-12 2017-01-04 南昌大学 用于太阳能电池的多晶硅/单晶硅异质结结构及其制备方法
CN103594541A (zh) * 2013-10-12 2014-02-19 南昌大学 用于太阳能电池的多晶硅/单晶硅异质结结构及其制备方法
US11133426B2 (en) 2014-11-28 2021-09-28 Lg Electronics Inc. Solar cell and method for manufacturing the same
US9722104B2 (en) 2014-11-28 2017-08-01 Lg Electronics Inc. Solar cell and method for manufacturing the same
US10014419B2 (en) 2014-11-28 2018-07-03 Lg Electronics Inc. Solar cell and method for manufacturing the same
CN105655427B (zh) * 2014-11-28 2018-07-24 Lg电子株式会社 太阳能电池及其制造方法
CN109037359A (zh) * 2014-11-28 2018-12-18 Lg电子株式会社 太阳能电池
US10230009B2 (en) 2014-11-28 2019-03-12 Lg Electronics Inc. Solar cell and method for manufacturing the same
CN105655427A (zh) * 2014-11-28 2016-06-08 Lg电子株式会社 太阳能电池及其制造方法
US11239379B2 (en) 2014-11-28 2022-02-01 Lg Electronics Inc. Solar cell and method for manufacturing the same
CN109037359B (zh) * 2014-11-28 2022-06-03 Lg电子株式会社 太阳能电池
US11616153B2 (en) 2014-11-28 2023-03-28 Shangrao Jinko Solar Technology Development Co., Ltd Solar cell and method for manufacturing the same
CN106784129A (zh) * 2015-11-20 2017-05-31 上海神舟新能源发展有限公司 背发射结背面隧道氧化钝化接触高效电池的制作方法

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