JP2010067972A - 交差指型背面接触太陽電池、及び交差指型背面接触太陽電池の製造方法 - Google Patents
交差指型背面接触太陽電池、及び交差指型背面接触太陽電池の製造方法 Download PDFInfo
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Abstract
【解決手段】裏面とこれに対向する前面を有する基板と、基板の裏面に形成され、第1のドーピング濃度を有し裏面から基板へと第1の深さだけ延出する第1の拡散領域および第2の拡散領域と、第2のドーピング濃度を有し裏面から基板へと第2の深さだけ延出し第1の拡散領域と第2の拡散領域との間に配置される第3の拡散領域とを有する複数の互いに入り込んだ拡散領域と、複数の互いに入り込んだ拡散領域の隣接する対間の基板の裏面に画定される複数の溝であって、第1の拡散領域は第1の溝によって第3の拡散領域から分離され、第2の拡散領域は第2の溝によって第3の拡散領域から分離される溝とを含み、複数の溝それぞれが第1の深さおよび第2の深さよりも深い裏面から基板への第3の深さを有する、交差指型背面接触太陽電池。
【選択図】図1
Description
本発明の第2の態様は、交差指型背面接触太陽電池の製造方法であって、前記基板の第1および第2の離間する拡散領域が、第1のドーピング濃度を有し前記裏面から前記基板へと第1の深さだけ延出し第2のドーピング濃度を有し前記裏面から前記基板へと第2の深さだけ延出する第3の拡散領域によって分離されるように、第1のドーパントを半導体基板の裏面へと拡散させるステップと、前記半導体基板の裏面に複数の溝を形成することで、前記第1の拡散領域を第1の溝によって前記第3の拡散領域から分離させ、前記第2の拡散領域を第2の溝によって前記第3の拡散領域から分離させるステップとを含む、交差指型背面接触太陽電池の製造方法、を提供する。
本発明の第3の態様は、交差指型背面接触太陽電池の製造方法であって、前記基板の第1および第2の離間する拡散領域が、第1のドーピング濃度を有し前記裏面から前記基板へと第1の深さだけ延出し第2のドーピング濃度を有し前記裏面から前記基板へと第2の深さだけ延出する第3の拡散領域によって分離されるように、第1のドーパントを半導体基板の裏面へと拡散させるステップと、前記第1のドーパントが前記第2のドーパントが前記第1および第2の拡散領域へと拡散するのを防止するように、第2のドーパントを前記第3の拡散領域へと拡散させるステップとを含む、交差指型背面接触太陽電池の製造方法、を提供する。
Claims (3)
- 交差指型背面接触太陽電池であって、
裏面とこれに対向する前面を有する基板と、
前記基板の裏面に形成され、第1のドーピング濃度を有し前記裏面から前記基板へと第1の深さだけ延出する第1の拡散領域および第2の拡散領域と、第2のドーピング濃度を有し前記裏面から前記基板へと第2の深さだけ延出し前記第1の拡散領域と前記第2の拡散領域との間に配置される第3の拡散領域とを有する複数の互いに入り込んだ拡散領域と、
前記複数の互いに入り込んだ拡散領域の隣接する対間の前記基板の裏面に画定される複数の溝であって、前記第1の拡散領域は第1の溝によって前記第3の拡散領域から分離され、前記第2の拡散領域は第2の溝によって前記第3の拡散領域から分離される溝とを含み、
前記複数の溝それぞれが前記第1の深さおよび前記第2の深さよりも深い前記裏面から前記基板への第3の深さを有する、交差指型背面接触太陽電池。 - 交差指型背面接触太陽電池の製造方法であって、
前記基板の第1および第2の離間する拡散領域が、第1のドーピング濃度を有し前記裏面から前記基板へと第1の深さだけ延出し第2のドーピング濃度を有し前記裏面から前記基板へと第2の深さだけ延出する第3の拡散領域によって分離されるように、第1のドーパントを半導体基板の裏面へと拡散させるステップと、
前記半導体基板の裏面に複数の溝を形成することで、前記第1の拡散領域を第1の溝によって前記第3の拡散領域から分離させ、前記第2の拡散領域を第2の溝によって前記第3の拡散領域から分離させるステップとを含む、交差指型背面接触太陽電池の製造方法。 - 交差指型背面接触太陽電池の製造方法であって、
前記基板の第1および第2の離間する拡散領域が、第1のドーピング濃度を有し前記裏面から前記基板へと第1の深さだけ延出し第2のドーピング濃度を有し前記裏面から前記基板へと第2の深さだけ延出する第3の拡散領域によって分離されるように、第1のドーパントを半導体基板の裏面へと拡散させるステップと、
前記第1のドーパントが前記第2のドーパントが前記第1および第2の拡散領域へと拡散するのを防止するように、第2のドーパントを前記第3の拡散領域へと拡散させるステップとを含む、交差指型背面接触太陽電池の製造方法。
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US12/207,446 | 2008-09-09 | ||
US12/207,446 US7999175B2 (en) | 2008-09-09 | 2008-09-09 | Interdigitated back contact silicon solar cells with laser ablated grooves |
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EP (1) | EP2161757A3 (ja) |
JP (1) | JP5567806B2 (ja) |
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TW (1) | TWI484645B (ja) |
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Also Published As
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US9054237B2 (en) | 2015-06-09 |
US8426724B2 (en) | 2013-04-23 |
US20110070681A1 (en) | 2011-03-24 |
EP2161757A3 (en) | 2016-02-10 |
CN101673776B (zh) | 2015-03-11 |
EP2161757A2 (en) | 2010-03-10 |
JP5567806B2 (ja) | 2014-08-06 |
KR20100030582A (ko) | 2010-03-18 |
CN101673776A (zh) | 2010-03-17 |
US20100059109A1 (en) | 2010-03-11 |
US20110070676A1 (en) | 2011-03-24 |
US7999175B2 (en) | 2011-08-16 |
TWI484645B (zh) | 2015-05-11 |
KR101607088B1 (ko) | 2016-03-29 |
TW201021224A (en) | 2010-06-01 |
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