WO2014026400A1 - 太阳能电池及其制作方法 - Google Patents

太阳能电池及其制作方法 Download PDF

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Publication number
WO2014026400A1
WO2014026400A1 PCT/CN2012/080533 CN2012080533W WO2014026400A1 WO 2014026400 A1 WO2014026400 A1 WO 2014026400A1 CN 2012080533 W CN2012080533 W CN 2012080533W WO 2014026400 A1 WO2014026400 A1 WO 2014026400A1
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Prior art keywords
type diffusion
trenches
solar cell
substrate
contact regions
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PCT/CN2012/080533
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English (en)
French (fr)
Inventor
陈宗保
杨士贤
陈钰君
邱铭晖
林宜宣
胡雁程
陈人杰
吴振诚
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友达光电股份有限公司
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Publication of WO2014026400A1 publication Critical patent/WO2014026400A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This invention relates to a solar cell, and more particularly to a back contact solar cell. Background technique
  • a solar cell is a component that utilizes the photovoltaic effect of a material to directly convert ambient light energy into electrical energy.
  • For semiconductor materials when sunlight is irradiated, light energy excites electrons in the silicon atoms to generate electron-hole pairs, which are affected by built-in potentials, respectively, by n-type semiconductors. It is attracted to the p-type semiconductor and gathers at both ends. At this time, the external electrodes are connected to form a loop.
  • back-contact solar cells have also received increasing attention.
  • the back contact type solar cell is located on the back of the solar cell because both the positive and negative electrodes are located. Therefore, the moving distance of the electron-hole pair is elongated, and the electron-hole pair is easily recombined during the movement or captured by many recombination centers in the semiconductor. Summary of the invention
  • a solar cell comprising a substrate having a light receiving surface and a back surface opposite to the light receiving surface, the substrate further comprising a plurality of trenches disposed on the back surface, the trench separating the back surface into a plurality of first contact regions and a plurality of second contact regions The first contact area and the second contact area are alternately arranged.
  • the solar cell includes a front field formed on the light receiving surface, and an antireflection layer formed on the front field.
  • the solar cell comprises a plurality of n-type diffusion regions and a plurality of p-type diffusion regions interposed on the back surface of the substrate, wherein the n-type diffusion regions are respectively located in the first contact region and a portion of the trench adjacent to one side thereof, and the p-type diffusion region Another portion of the trench is located in the second contact region and adjacent to one side thereof.
  • the depth of the trench is at least half the thickness of the substrate, and the width of the first contact region The degree is substantially equal to the width of the second contact region, and the width of the first contact region and the second contact region is substantially not less than the width of the trench.
  • the solar cell further includes a first conductive layer disposed on the first contact region and a second conductive layer disposed on the second contact region, wherein the first conductive layer and the second conductive layer are disposed in a coplanar manner.
  • the grooves are arranged in parallel with each other.
  • the trench is perpendicular to the first contact region and the second contact region. Two sides of the first contact region are respectively connected with a p-type trench having a p-type diffusion region and an n-type trench having an n-type diffusion region, and two sides of the second contact region are respectively connected with a p-type trench having a p-type diffusion region And an n-type trench having an n-type diffusion region.
  • the grooves have a depth of at least half of the thickness of the substrate.
  • the width of the first contact regions is equal to the width of the second contact regions.
  • the widths of the first contact regions and the second contact regions are not less than the width of the trenches.
  • the method further includes a plurality of first conductive layers disposed on the first contact regions and a plurality of second conductive layers disposed on the second contact regions, wherein the first conductive layers and the second conductive layers Set for a common plane.
  • grooves are arranged in parallel with each other.
  • the trenches are perpendicular to the first contact regions and the second contact regions.
  • the two sides of the first contact regions are respectively connected to the p-type trenches having p-type diffusion regions and the n-type trenches having n-type diffusion regions, and the two sides of the second contact regions are respectively connected The p-type trenches having p-type diffusion regions and the n-type trenches having n-type diffusion regions.
  • Another aspect of the present invention provides a method for fabricating a solar cell, comprising providing a substrate having a light receiving surface and a back surface opposite to the light receiving surface, and then forming a plurality of trenches on the back surface of the substrate, the trench separating the back surface into a plurality of first contact regions and a plurality of second contact regions, the first contact regions and the second contact regions being alternately disposed. Next, a plurality of n-type diffusion regions are formed on the first contact region and a portion of the trench adjacent to one side thereof, and a plurality of p-type diffusion regions are formed on the second contact region and another portion of the trench adjacent to one side thereof.
  • a front field is formed on the light receiving surface, and an antireflection layer is formed on the front field.
  • the step in which the trench is formed on the back surface of the substrate is accomplished by laser drilling or etching.
  • the trenches have a depth of at least half of the thickness of the substrate.
  • the method of fabricating a solar cell further includes forming a first conductive layer on the first contact region and forming a second conductive layer on the second contact region, wherein the first conductive layer and the second conductive layer are coplanar.
  • the step of forming a plurality of trenches on the back surface of the substrate is accomplished by laser drilling or etching.
  • the method further includes forming a plurality of first conductive layers on the first contact regions and forming a plurality of second conductive layers on the second contact regions, wherein the first conductive layers and the second conductive layers Set for a common plane.
  • the n-type diffusion region and the p-type diffusion region are penetrated into the interior of the substrate.
  • electrons or holes can enter the corresponding n-type diffusion region or p-type diffusion region with a shorter path, which effectively reduces the movement process of electron-hole pairs.
  • it is combined or disappeared by the recombination center in the semiconductor substrate.
  • FIG. 1 is a cross-sectional view showing an embodiment of a solar cell of the present invention.
  • FIGS. 2A to 21 are cross-sectional views showing different embodiments of a method for fabricating a solar cell of the present invention, respectively.
  • Shielding 170 first conductive layer
  • the solar cell 100 is a back electrode type solar cell.
  • the solar cell 100 includes a substrate 110 having a light receiving surface 112 for receiving sunlight and a back surface 114 with respect to the light receiving surface 112.
  • the light receiving surface 112 and the back surface 114 are respectively located on opposite sides of the substrate 110.
  • the substrate 110 further includes a plurality of trenches 120 disposed on the back surface 114. The trenches 120 partition the back surface 114 into a plurality of first contact regions 116 and a plurality of second contact regions 118, a first contact region 116 and a second contact region.
  • first contact region 116 and second contact region 118 are interlaced, and the adjacent first contact region 116 and second contact region 118 are separated by a trench 120.
  • the grooves 120 are disposed in parallel with each other.
  • the trench 120 is perpendicular to the first contact region 116 and the second contact region 118.
  • the solar cell 100 includes a front surface field (FSF) formed on the light receiving surface 112, wherein the front field 130 may be an n-type diffusion layer to help the solar cell 100 collect more holes and reduce electrons. The loss of recombination of hole pairs.
  • the substrate 110 is mainly a silicon material, in order to reduce energy loss due to light reflection, the solar cell 100 further includes an anti-reflection layer 140 formed on the front field 130.
  • the material of the anti-reflection layer 140 may be a film of silicon nitride (SiN) or titanium dioxide (Ti0 2 ).
  • a protective layer may be further disposed on the antireflection coating 140 (ARC) to protect the surface of the solar cell 100.
  • the solar cell 100 includes a plurality of n-type diffusion regions 150 and a plurality of p-type diffusion regions 160.
  • the n-type diffusion regions 150 and the p-type diffusion regions 160 are alternately disposed on the back surface 114 of the substrate 110.
  • the n-type diffusion regions 150 are respectively located on the surface of the first contact region 116 and a portion of the trench 120 adjacent to one side thereof, and the p-type diffusion region 160 is respectively located on the surface of the second contact region 118 and another portion of the trench 120 adjacent to one side thereof. .
  • the trench 120 can be further divided into a plurality of n-type trenches 122 having n-type diffusion regions 150 and a plurality of a p-type trench 124 having a p-type diffusion region 160.
  • the two sides of each of the n-type trenches 122 are respectively connected to the first contact region 116 and the second contact region 118, and the two sides of each of the p-type trenches 124 are respectively connected to the first
  • the two contact regions 118 are connected to the first contact region 116, and the two sides of each of the first contact regions 116 are respectively connected with the n-type trenches 122 and the p-type trenches 124, and the two sides of each of the second contact regions 118 are respectively connected with the p-type trenches.
  • the groove 124 and the n-shaped groove 122 are respectively located on the surface of the first contact region 116 and the n-type trench 122 adjacent thereto, and the p-type diffusion region 160 is located on the surface of the second contact region 118 and the p-type trench 124 adjacent thereto.
  • Each of the n-type diffusion regions 150 is distributed on the surfaces of the adjacent first contact regions 116 and n-type trenches 122, and each of the p-type diffusion regions 160 is distributed on the surfaces of the adjacent second contact regions 118 and p-type trenches 124.
  • the solar cell 100 further includes a plurality of first conductive layers 170 and a plurality of second conductive layers 180.
  • the first conductive layer 170 is disposed on the first contact region 116 and is connected to a portion of the n-type diffusion region 150.
  • the second conductive layer 180 The second contact region 118 is disposed to be connected to a portion of the p-type diffusion region 160.
  • the first conductive layer 170 and the second conductive layer 180 are disposed in a coplanar manner.
  • the material of the conductive layer may be, for example, a material that can be electrically conductive, and may be composed of transparent conducting oxides (TC0) or thin metal.
  • the transparent conductive oxide may include, but is not limited to, indium tin oxide (IT0:), zinc indium (IZ0:), zinc aluminum oxide AZ0:), zinc gallium oxide (GZO) or molybdenum oxide (IMO).
  • thin metals include silver Ag:), aluminum Al) or alloys thereof.
  • the n-type diffusion region 150 and the p-type diffusion region 160 are deep inside the substrate 110, and the distribution area of the n-type diffusion region 150 and the p-type diffusion region 160 can be increased, and the n-type diffusion region 150 can be increased.
  • the contact area of the p-type diffusion region 160 with respect to the electron-hole pair In this way, when electron-hole pairs are generated, electrons or holes can enter the corresponding n-type diffusion region 150 or the p-type diffusion region 160 with a shorter path, effectively reducing the electron-hole pair moving. The process is again combined or disappeared by the recombination center in the semiconductor substrate 110.
  • the depth d of the trench 120 is at least half the thickness t of the substrate 110, wherein the thickness of the substrate 110 is substantially 165 ⁇ m ⁇ 111 :) to 200 ⁇ m 111 :).
  • the width w1 of the first contact region 116 is substantially equal to the width w1 of the second contact region 118, and the width w1 of the first contact region 116 and the second contact region 118 is substantially not less than the width 120 w2 of the trench.
  • the depth d, width w2 and distribution density of the trenches 120 can be designed to reduce the effect on the structural strength of the substrate 110.
  • 2A to 21 are cross-sectional views showing different steps of a method for fabricating a solar cell according to an embodiment of the present invention.
  • 2A is a substrate 110 having a light receiving surface 112 and a phase For the back surface 114 of the light receiving surface 112.
  • the light receiving surface 112 and the backing plate 114 of the roughened substrate 110 may be included in FIG. 2A.
  • FIG. 2B shows a plurality of trenches 120 formed on the back surface 114 of the substrate 110.
  • the trench 120 divides the back surface 114 of the substrate 110 into a plurality of first contact regions 116 and a plurality of second contact regions 118, and the first contact regions 116 and the second contact regions 118 are alternately disposed.
  • the trenches 120 can be formed on the substrate 110 using physical methods, such as laser drilling, or chemical methods, such as etching.
  • a p-type material layer 162 is formed on the back surface 114 of the substrate 110 and the surface of the plurality of trenches 120.
  • the method of forming the p-type material layer 162 may be ion implantation such as p-type ion doping or diffusion, or It is a method such as deposition.
  • FIG. 2D shows the formation of a patterned shield on the p-type material layer 162 on the second contact region 118.
  • a patterned photoresist layer for example, a patterned photoresist layer.
  • Fig. 2E is an etching step to remove a portion of the p-type material layer 162 that is not covered by the shield 164 of Fig. 2D.
  • the etching step may be wet etching, wherein the etching solution may be a potassium hydroxide (KOH) solution or an alkaline solution such as sodium hydroxide (NaOH). Then remove the shield 164
  • the substrate 110 is fed into an oven having an n-type material gas to form an n-type diffusion layer as the front field 130 on the light-receiving surface 112 of the substrate 110, and a p-type material on the back surface 114 of the substrate 110.
  • An n-type diffusion region 150 is formed on the region covered by the layer 162.
  • the temperature of the oven is between 800 degrees Celsius and 880 degrees Celsius.
  • Fig. 2G shows the temperature of the oven once again, so that the temperature of the oven rises to over 900 degrees Celsius, so that the p-type material layer 162 in Fig. 2F diffuses into the substrate 110 to become the p-type diffusion region 160.
  • the n-type diffusion region 150 is formed on the surface of the first contact region 116 and a portion of the trench 120 adjacent to one side thereof
  • the p-type diffusion region 160 is formed on the second contact region 118 and another portion of the trench 120 adjacent to one side thereof. s surface.
  • the n-type diffusion region 150 and the p-type diffusion region 160 are alternately arranged.
  • Fig. 2H shows the formation of the anti-reflection layer 140 on the front field 130.
  • FIG. 21 is a first conductive layer 170 formed on the first contact region 116, and a second conductive layer 180 formed on the second contact region 118.
  • the application of the present invention has the following advantages.
  • the n-type diffusion region and the p-type diffusion region are made deep inside the substrate. In this way, when electron-hole pairs are generated, electrons or holes can enter the corresponding n-type diffusion region or p-type diffusion region with a shorter path, which effectively reduces the movement process of electron-hole pairs.
  • the compound center captures and disappears.

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Abstract

一种太阳能电池，包含基板，基板具有受光面与相对于受光面的背面，基板更包含设置于背面的多个沟槽，太阳能电池包含多个n型扩散区与多个p型扩散区，交错地设置于基板之背面与沟槽之表面。通过深入基板的沟槽，可以减少电子-空穴对在移动的过程中再结合的情形。一种太阳能电池的制作方法也在此揭露。通过沟槽的设计，使得n型扩散区与p型扩散区深入基板内部。如此一来，当电子-空穴对产生时，电子或是空穴可以用较短的路径进入对应的n型扩散区或是p型扩散区，有效减少了电子-空穴对在移动的过程中再一次地结合或是被半导体基板中的复合中心捕捉而消失的情形。

Description

太阳能电池及其制作方法 技术领域
本发明是有关于一种太阳能电池， 且特别是有关于一种背接触式的太阳能 电池。 背景技术
太阳能电池是利用材料的光电效应 (photovoltaic effect), 将环境光能量直接 转换成电能的元件。 光线照在物质内部而产生导电载子增加的现象， 称为光电 效应。对半导体物质而言， 当太阳光照射时， 光能将硅原子中的电子激发出来， 而产生电子-空穴对， 这些电子和空穴均会受到内建电位的影响， 分别被 n型半 导体和 p型半导体吸引， 而聚集在两端。 此时外部用电极连接起来， 形成一个 回路。
为了提高太阳能电池的光捕捉效率， 背接触式 (back-contact)的太阳能电池 也逐渐受到重视。 然而， 相较于传统正负电极分别位于太阳能电池两侧， 电子 与空穴可以分别向两侧的正负导电层移动的情形， 背接触式的太阳能电池由于 正负电极均位于太阳能电池的背面， 因此使得电子 -空穴对的移动距离拉长， 而 令电子 -空穴对在移动的过程中会容易地再结合或被半导体内许多复合中心 (recombination center)捕捉而消逝。 发明内容
本发明的目的就是在提供一种具有沟槽的太阳能电池，用以降低电子 -空穴 对在移动过程中再结合或被捕捉的情形。
一种太阳能电池， 包含具有受光面与相对于受光面的背面的基板， 基板更 包含设置于背面的多个沟槽， 沟槽将背面分隔为多个第一接触区与多个第二接 触区， 第一接触区与第二接触区交错地设置。 太阳能电池包含形成于受光面上 的前面场， 以及形成于前面场上的抗反射层。 太阳能电池包含多个 n型扩散区 与多个 p型扩散区， 交错地设置于基板的背面， 其中 n型扩散区分别位于第一 接触区及邻接其一侧的部分沟槽， p 型扩散区分别位于第二接触区及邻接其一 侧的另一部分沟槽。 沟槽的深度至少为基板的厚度的一半， 且第一接触区的宽 度实质上等于第二接触区的宽度， 所述的第一接触区与第二接触区的宽度实质 上不小于沟槽的宽度。 太阳能电池更包含设置于第一接触区的第一导电层与设 置第二接触区的第二导电层， 其中第一导电层与第二导电层为共平面设置。 沟 槽为相互平行地设置。 沟槽垂直于第一接触区与第二接触区。 第一接触区的两 侧分别连接具有 p型扩散区的 p型沟槽与具有 n型扩散区的 n型沟槽， 第二接 触区的两侧分别连接具有 p型扩散区的 p型沟槽与具有 n型扩散区的 n型沟槽。
其中， 该些沟槽的深度至少为该基板的厚度的一半。
其中， 该些第一接触区的宽度等于该些第二接触区的宽度。
其中，该些第一接触区以及该些第二接触区的宽度不小于该些沟槽的宽度。 其中， 更包含设置于该些第一接触区的多个第一导电层与设置于该些第二 接触区的多个第二导电层， 其中该些第一导电层与该些第二导电层为共平面设 置。
其中， 该些沟槽为相互平行地设置。
其中， 该些沟槽垂直于该些第一接触区与该些第二接触区。
其中， 该些第一接触区的两侧分别连接该些具有 p型扩散区的 p型沟槽与 该些具有 n型扩散区的 n型沟槽， 该些第二接触区的两侧分别连接该些具有 p 型扩散区的 p型沟槽与该些具有 n型扩散区的 n型沟槽。
本发明的另一态样为一种太阳能电池的制作方法， 包含提供基板， 基板具 有受光面与相对于受光面的一背面， 接着形成多个沟槽于基板的背面， 沟槽将 背面分隔为多个第一接触区与多个第二接触区， 第一接触区与第二接触区交错 地设置。 接着， 形成多个 n型扩散区于第一接触区及邻接其一侧的部分沟槽， 以及形成多个 p型扩散区于第二接触区及邻接其一侧的另一部分沟槽。 接着， 形成前面场于受光面上， 以及形成抗反射层于前面场上。 其中形成沟槽于基板 的背面的歩骤系利用雷射钻孔或是蚀刻完成。 该些沟槽的深度至少为该基板的 厚度的一半。 太阳能电池的制作方法更包含形成第一导电层于第一接触区上以 及形成第二导电层于第二接触区上， 其中第一导电层与第二导电层为共平面设 置。
其中， 形成多个沟槽于该基板的该背面的歩骤是利用激光钻孔或是蚀刻完 成。
其中， 该些沟槽的深度至少为该基板的厚度的一半。 其中， 更包含形成多个第一导电层于该些第一接触区上以及形成多个第二 导电层于该些第二接触区上， 其中该些第一导电层与该些第二导电层为共平面 设置。
通过沟槽的设计，使得 n型扩散区与 p型扩散区深入基板内部。如此一来， 当电子-空穴对产生时， 电子或是空穴可以用较短的路径进入对应的 n型扩散区 或是 p型扩散区，有效减少了电子-空穴对在移动的过程中再一次地结合或是被 半导体基板中的复合中心捕捉而消失的情形。
以下结合附图和具体实施例对本发明进行详细描述， 但不作为对本发明的 限定。 附图说明
图 1绘示本发明的太阳能电池一实施例的剖面图。
图 2A至图 21分别绘示本发明的太阳能电池的制作方法一实施例于不同歩 骤的剖面图。
其中 ， 附图标记:
100： 太阳能电池
110： 基板
112： 受光面
114： 背面
116： 第一接触区
118： 第二接触区
120： 沟槽
122： n型沟槽
124： p型沟槽
130： 前面场
140： 抗反射层
150： n型扩散区
160： p型扩散区
162： p型材料层
164： 屏蔽 170： 第一导电层
180： 第二导电层
d: 深度
t: 厚度
wl、 w2: 宽度 具体实施方式
以下将以图式及详细说明清楚说明本发明的精神， 任何本领域技术人员在 了解本发明的较佳实施例后， 当可由本发明所教示的技术， 加以改变及修饰， 其并不脱离本发明的精神与范围。
参照图 1，其绘示本发明的太阳能电池一实施例的剖面图。太阳能电池 100 为一种背电极式的太阳能电池。 太阳能电池 100包含有基板 110， 基板 110具 有用以接收太阳光的一受光面 112以及相对于受光面 112的一背面 114。 换言 之， 受光面 112与背面 114分别位于基板 110的相对两面。 基板 110更包含有 设置于背面 114的多个沟槽 120， 沟槽 120将背面 114分隔为多个第一接触区 116以及多个第二接触区 118，第一接触区 116与第二接触区 118为交错地设置， 相邻的第一接触区 116与第二接触区 118之间通过沟槽 120分离。 沟槽 120为 相互平行地设置。 沟槽 120垂直于第一接触区 116与第二接触区 118。
太阳能电池 100包含有形成于受光面 112上的前面场 130 (front surface field; FSF), 其中前面场 130可以为 n型扩散层， 用以帮助太阳能电池 100收 集更多的空穴，减少电子-空穴对再结合的损失。又因为基板 110主要为硅材料， 为了降低因光线反射造成的能量损耗， 太阳能电池 100更包含有形成于前面场 130上的抗反射层 140。 抗反射层 140的材料可以为氮化硅 (SiN)或是二氧化钛 (Ti02)等薄膜。 抗反射层 140 (antireflection coating; ARC)上可以更设置有保护 层， 以保护太阳能电池 100表面。
太阳能电池 100包含多个 n型扩散区 150以及多个 p型扩散区 160， n型扩 散区 150与 p型扩散区 160为交错地设置于基板 110的背面 114。 n型扩散区 150分别位于第一接触区 116以及邻接其一侧的部分沟槽 120的表面，p型扩散 区 160分别位于第二接触区 118以及邻接其一侧的另一部分沟槽 120的表面。 换言之， 沟槽 120又可以分为多个具有 n型扩散区 150的 n型沟槽 122与多个 具有 p型扩散区 160的 p型沟槽 124， 每一个 n型沟槽 122的两侧分别连接第 一接触区 116与第二接触区 118， 每一个 p型沟槽 124的两侧分别连接第二接 触区 118与第一接触区 116， 每一个第一接触区 116的两侧分别连接 n型沟槽 122与 p型沟槽 124，每一个第二接触区 118的两侧分别连接 p型沟槽 124与 n 型沟槽 122。n型扩散区 150分别位于第一接触区 116及与其所邻接的 n型沟槽 122的表面， p型扩散区 160位于第二接触区 118及与其所邻接的 p型沟槽 124 的表面。 每一个 n型扩散区 150分布在邻接的第一接触区 116与 n型沟槽 122 的表面， 每一个 p型扩散区 160分布在邻接的第二接触区 118与 p型沟槽 124 的表面。
太阳能电池 100更包含有多个第一导电层 170与多个第二导电层 180， 第 一导电层 170设置于第一接触区 116， 与 n型扩散区 150的一部分连接， 第二 导电层 180设置于第二接触区 118， 与 p型扩散区 160的一部分连接。 第一导 电层 170与第二导电层 180为共平面设置。 所述的导电层的材料可例如是能够 电性导通的材料， 可由透明导电氧化物 ( transparent conducting oxides, TC0)或 薄金属构成。所述的透明导电氧化物可包括但不限制为氧化铟锡 (IT0：)、氧化锌 铟 (IZ0：)、氧化锌铝AZ0：)、氧化锌镓GZO)或加钼氧化铟 (IMO)等， 而薄金属则 包括银Ag：)、 铝Al)或其合金等。
通过沟槽 120的设计，使得 n型扩散区 150与 p型扩散区 160深入基板 110 内部， 并可以增加 n型扩散区 150与 p型扩散区 160的分布面积， 以及增加 n 型扩散区 150与 p型扩散区 160相对于电子-空穴对的接触面积。如此一来， 当 电子-空穴对产生时， 电子或是空穴可以用较短的路径进入对应的 n型扩散区 150或是 p型扩散区 160， 有效减少了电子-空穴对在移动的过程中再一次地结 合或是被半导体基板 110中的复合中心捕捉而消失的情形。
沟槽 120的深度 d至少为基板 110的厚度 t的一半， 其中基板 110的厚度 实质上为 165微米^ 111：)至200微米 111：)。 第一接触区 116的宽度 wl实质上 等于第二接触区 118的宽度 wl， 第一接触区 116与第二接触区 118的宽度 wl 实质上不小于沟槽的宽度 120 w2。 沟槽 120的深度 d、 宽度 w2与分布密度可 以经由设计， 以降低对于基板 110的结构强度的影响。
参照图 2A至图 21， 其分别绘示本发明一实施例的太阳能电池的制作方法 于不同歩骤的剖面图。图 2A为提供基板 110，基板 110具有受光面 112以及相 对于受光面 112的背面 114。 图 2A中可包含有粗糙化基板 110的受光面 112 与背板 114。
接着， 图 2B为形成多个沟槽 120于基板 110的背面 114。沟槽 120将基板 110的背面 114分隔为多个第一接触区 116与多个第二接触区 118，第一接触区 116与第二接触区 118为交错地设置。 沟槽 120可以利用物理方法， 如雷射钻 孔， 或是化学方法， 如蚀刻， 形成在基板 110上。
接着， 图 2C为在基板 110的背面 114与多个沟槽 120表面上形成 p型材 料层 162， 形成 p形材料层 162的方法可以为离子布植例如是 p型离子掺杂或 扩散， 或是沉积等方法。
接着， 图 2D为在第二接触区 118上的 p型材料层 162上形成图案化屏蔽
164， 例如是图案化光阻层。
接着， 图 2E为进行蚀刻歩骤， 以移除未被图 2D中的屏蔽 164所覆盖的部 分 p型材料层 162。 此蚀刻歩骤可以为湿蚀刻， 其中蚀刻的溶液可以为氢氧化 钾 (KOH)溶液或是氢氧化钠 (NaOH)等碱性溶液。 然后移除屏蔽 164
接着， 图 2F为将基板 110送入具有 n型材料气体的烤炉， 以在基板 110 的受光面 112形成 n型扩散层作为前面场 130， 以及在基板 110的背面 114，未 被 p型材料层 162覆盖的区域上形成 n型扩散区 150。 此时烤炉的温度约在摄 氏 800度至摄氏 880度之间。
接着， 图 2G为再一次升温烤炉的温度，使烤炉的温度上升至超过摄氏 900 度， 以使得图 2F中的 p型材料层 162扩散进入基板 110，成为 p型扩散区 160。 至此， n型扩散区 150形成于第一接触区 116及邻接其一侧的部分沟槽 120的 表面， p型扩散区 160形成于第二接触区 118及邻接其一侧的另一部分沟槽 120 的表面。 n型扩散区 150与 p型扩散区 160为交错地设置。
接着， 图 2H为形成抗反射层 140于前面场 130上。
最后， 图 21为在第一接触区 116上形成第一导电层 170， 以及在第二接触 区 118上形成第二导电层 180。
由上述本发明较佳实施例可知， 应用本发明具有下列优点。 通过沟槽的设 计， 使得 n型扩散区与 p型扩散区深入基板内部。 如此一来， 当电子-空穴对产 生时，电子或是空穴可以用较短的路径进入对应的 n型扩散区或是 p型扩散区， 有效减少了电子 -空穴对在移动的过程中再一次地结合或是被半导体基板中的 复合中心捕捉而消失的情形。
当然， 本发明还可有其它多种实施例， 在不背离本发明精神及其实质的情 况下， 熟悉本领域的技术人员可根据本发明作出各种相应的改变和变形， 但这 些相应的改变和变形都应属于本发明权利要求的保护范围。

Claims

权利要求书
1.一种太阳能电池， 其特征在于， 包含：
一基板， 具有一受光面与相对于该受光面的一背面， 该基板具有多个沟槽 设置于该背面， 该些沟槽将该背面分隔为多个第一接触区与多个第二接触区， 该些第一接触区与该些第二接触区交错地设置；
一前面场， 形成于该基板的该受光面上；
一抗反射层， 形成于该前面场上； 以及
多个 n型扩散区与多个 p型扩散区， 交错地设置于该基板的该背面， 其中 该些 n型扩散区分别位于该些第一接触区及邻接其一侧的部分该些沟槽的表 面，该些 p型扩散区分别位于该些第二接触区及邻接其一侧的另一部分该些沟 槽的表面。
2.根据权利要求 1所述的太阳能电池， 其特征在于， 该些沟槽的深度至少 为该基板的厚度的一半。
3.根据权利要求 2所述的太阳能电池， 其特征在于， 该些第一接触区的宽 度等于该些第二接触区的宽度。
4.根据权利要求 3所述的太阳能电池， 其特征在于， 该些第一接触区以及 该些第二接触区的宽度不小于该些沟槽的宽度。
5.根据权利要求 1所述的太阳能电池， 其特征在于， 更包含设置于该些第 一接触区的多个第一导电层与设置于该些第二接触区的多个第二导电层，其中 该些第一导电层与该些第二导电层为共平面设置。
6.根据权利要求 1所述的太阳能电池， 其特征在于， 该些沟槽为相互平行 地设置。
7.根据权利要求 1所述的太阳能电池， 其特征在于， 该些沟槽垂直于该些 第一接触区与该些第二接触区。
8.根据权利要求 1所述的太阳能电池， 其特征在于， 该些第一接触区的两 侧分别连接该些具有 p型扩散区的 p型沟槽与该些具有 n型扩散区的 n型沟槽， 该些第二接触区的两侧分别连接该些具有 p型扩散区的 p型沟槽与该些具有 n 型扩散区的 n型沟槽。
9.一种太阳能电池的制作方法， 其特征在于， 包含：
提供一基板， 该基板具有一受光面与相对于该受光面的一背面； 形成多个沟槽于该基板的该背面，该些沟槽将该背面分隔为多个第一接触 区与多个第二接触区， 该些第一接触区与该些第二接触区交错地设置；
形成多个 n型扩散区于该些第一接触区及邻接其一侧的部分该些沟槽的 表面；
形成多个 p 型扩散区于该些第二接触区及邻接其一侧的另一部分该些沟 槽的表面；
形成一前面场于该受光面上； 以及
形成一抗反射层于该前面场上。
10.根据权利要求 9所述的太阳能电池的制作方法， 其特征在于， 形成多 个沟槽于该基板的该背面的歩骤是利用激光钻孔或是蚀刻完成。
11.根据权利要求 9所述的太阳能电池的制作方法， 其特征在于， 该些沟 槽的深度至少为该基板的厚度的一半。
12.根据权利要求 9所述的太阳能电池的制作方法， 其特征在于， 更包含 形成多个第一导电层于该些第一接触区上以及形成多个第二导电层于该些第 二接触区上， 其中该些第一导电层与该些第二导电层为共平面设置。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352948A (en) * 1979-09-07 1982-10-05 Massachusetts Institute Of Technology High-intensity solid-state solar-cell device
CN101673776A (zh) * 2008-09-09 2010-03-17 帕洛阿尔托研究中心公司 具有激光烧蚀槽的指叉背接触太阳能硅电池及其制造方法
KR20120004174A (ko) * 2010-07-06 2012-01-12 현대중공업 주식회사 후면전극형 태양전지 및 그 제조방법
CN102593232A (zh) * 2012-03-19 2012-07-18 厦门大学 一种横向结构的pn太阳能电池及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352948A (en) * 1979-09-07 1982-10-05 Massachusetts Institute Of Technology High-intensity solid-state solar-cell device
CN101673776A (zh) * 2008-09-09 2010-03-17 帕洛阿尔托研究中心公司 具有激光烧蚀槽的指叉背接触太阳能硅电池及其制造方法
KR20120004174A (ko) * 2010-07-06 2012-01-12 현대중공업 주식회사 후면전극형 태양전지 및 그 제조방법
CN102593232A (zh) * 2012-03-19 2012-07-18 厦门大学 一种横向结构的pn太阳能电池及其制备方法

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