CN110112255A - 一种基于光刻掩膜法制备n型ffe结构的ibc太阳能电池的方法 - Google Patents
一种基于光刻掩膜法制备n型ffe结构的ibc太阳能电池的方法 Download PDFInfo
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Abstract
本发明的目的在于公开一种基于光刻掩膜法制备N型FFE结构的IBC太阳能电池的方法，与现有技术相比，在制作P+发射极及N+背场过程中采用光刻掩膜技术，避免在电池工艺制作过程中引入晶格损伤，从而降低载流子复合速率；采用全绒面设计，可将光反射率达到极限最低化，极大地从光学管理角度优化电池效率；电池前表面的FFE结构与N型硅衬底形成pn结，使N+背场区以上的少子空穴被前发射极收集横向传输至P+发射极以上区域后受空穴浓度梯度影响再被注入至P+发射极，以致被P+发射极收集，实现本发明的目的。
Description
技术领域
本发明涉及一种制备IBC太阳能电池的方法，特别涉及一种基于光刻掩膜法制备N型FFE结构的IBC太阳能电池的方法。
背景技术
随着5.31新政的实施，从长远经济性角度考虑，整个光伏行业将高效太阳能电池作为生产目标。IBC电池以理论效率的优越性及易实现性而被广泛使用。
具体而言，FFE结构的IBC电池除了具有前表面无栅线遮光的优势外，仍具备降低空穴复合速率的优点，所以也被广泛研究。
对于背结背接触太阳能电池，为保护P+发射极与N+背场在制作过程中互不干扰，所以需要采用掩膜技术来辅助完成。而在电池生产线中常用氮化硅作为掩膜层，然后通过高精度对准识别后进行激光烧蚀隔离，但因激光的高功率辐照会对开窗区附近硅片的晶格造成损伤，从而加大载流子复合速率，降低开路电压。
因此，特别需要一种基于光刻掩膜法制备N型FFE结构的IBC太阳能电池的方法，以解决上述现有存在的问题。
发明内容
本发明的目的在于提供一种基于光刻掩膜法制备N型FFE结构的IBC太阳能电池的方法，针对现有技术的不足，有效地克服激光烧蚀对开窗区附近硅片晶格的损伤，避免在工艺过程中引入新缺陷。
本发明所解决的技术问题可以采用以下技术方案来实现：
一种基于光刻掩膜法制备N型FFE结构的IBC太阳能电池的方法，其特征在于，它包括如下步骤：
1)将单晶硅衬底经过去损伤层、清洗及制绒；
2)采用光刻掩膜工艺和磷扩散工艺在绒面上制作N+背场和钝化层，去除P+发射极上的光刻胶层及减薄PSG；
3)采用光刻掩膜工艺和硼扩散工艺在绒面上制作P+发射极和前表面发射极及钝化层，并刻蚀掉N+背场上的光刻胶层及减薄BSG；
4)采用PECVD分步沉积减反射层；
5)通过丝网印刷制作正电极及负电极，烧结后得到IBC太阳能电池。
在本发明的一个实施例中，步骤1)中的去损伤层，清洗及制绒，包括如下步骤：
(1)将单晶硅衬底浸入配有H2O2、NaOH的溶液中进行去损伤层清洗；
(2)进行织构化处理及金属离子清理。
在本发明的一个实施例中，步骤2)中的制作N+背场和钝化层，包括如下步骤：
(1)在单晶硅衬底背面P+区上沉积掩膜层，以在P+区形成掩膜；
(2)在三氯氧磷气氛中对单晶硅衬底背面进行扩散，形成N+背场和钝化层。
(3)在HF酸液中去除P+发射极上的光刻胶层，同时减薄PSG，以减少P+发射极表面的多孔缺陷；
在本发明的一个实施例中，步骤3)中的制作前发射极和P+发射极及钝化层，包括如下步骤：
(1)在背场区上沉积掩膜层，以保护N+区不被硼元素掺杂；
(2)在三溴化硼氛围下对单晶硅衬底进行双面扩散，以形成前发射极和P+发射极及钝化层；
(3)在HF酸液中去除N+背场区的光刻胶层并减薄BSG，减小P+发射极区的表面态密度以降低载流子的表面复合。
在本发明的一个实施例中，步骤4)中的沉积减反射层，它包括如下步骤：
(1)在单晶硅衬底正面镀减反射膜以保护正表面的绒面结构；
(2)在单晶硅衬底背面镀减反射膜。
在本发明的一个实施例中，步骤5)中的丝网印刷，包括如下工艺流程：
预烧结→印刷一层点印式烧穿型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料→烘干→印刷一层线型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料→烘干→烧结→印刷一层绝缘浆料→烘干→叠印一层绝缘浆料→烘干→主栅线银铝浆印刷一次。
本发明的基于光刻掩膜法制备N型FFE结构的IBC太阳能电池的方法，与现有技术相比，在制作P+发射极及N+背场过程中采用光刻掩膜隔离技术，避免在电池工艺制作过程中引入晶格损伤，从而降低载流子复合速率；采用全绒面设计，可将光反射率达到极限最低化，极大地从光学管理角度优化电池效率；电池前表面的FFE结构与N型硅衬底形成pn结，使N+背场以上的少子空穴被前发射极收集横向传输至P+发射极以上区域后受空穴浓度梯度影响再被注入至P+发射极，被P+发射极收集，实现本发明的目的。
本发明的特点可参阅本案图式及以下较好实施方式的详细说明而获得清楚地了解。
附图说明
图1为本发明的N型FFE结构的IBC太阳能电池的结构示意图；
图2为本发明的制备N型FFE结构的IBC太阳能电池的方法的流程示意图。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体图示，进一步阐述本发明。
实施例
如图1和图2所示，本发明的基于光刻掩膜法制备N型FFE结构的IBC太阳能电池的方法，它包括如下步骤：
1)将单晶硅衬底4经过去损伤层、清洗及制绒；
2)采用光刻掩膜工艺和磷扩散工艺在绒面上制作N+背场6和钝化层2，去除P+发射极上的光刻胶层及减薄PSG；
3)采用光刻掩膜工艺和硼扩散工艺在绒面上制作前发射极3和P+发射极5及钝化层2，并刻蚀掉N+背场6上的光刻胶层及减薄BSG；
4)采用PECVD分步沉积减反射层1；
5)通过丝网印刷制作正电极7及负电极8，烧结后得到IBC太阳能电池。
在本实施例中，步骤1)中的去损伤层，清洗及制绒，包括如下步骤：
(1)将单晶硅衬底4浸入配有H2O2、NaOH的溶液中进行去损伤层清洗；
(2)进行织构化处理及金属离子清理。
在本实施例中，步骤2)中的制作N+背场6和钝化层2，包括如下步骤：
(1)在单晶硅衬底4背面P+区上沉积掩膜层，以在P+区形成掩膜；
(2)在三氯氧磷气氛中对单晶硅衬底4背面进行扩散，形成N+背场6。
(3)在HF酸液中去除P+发射极上的光刻胶层，同时减薄PSG，以减少N+背场区表面的多孔缺陷；
在本实施例中，步骤3)中的制作前发射极3及P+发射极5和钝化层2，包括如下步骤：
(1)在N+背场区沉积掩膜层，以保护不被硼元素掺杂；
(2)在三溴化硼氛围下对单晶硅衬底进行双面扩散，以形成前发射极3和P+发射极5及钝化层2；
(3)在HF酸液中去除N+背场上的光刻胶层并减薄BSG，减少P+发射极表面的多孔缺陷以降低载流子的表面复合。
在本实施例中，步骤4)中的沉积减反射层1，它包括如下步骤：
(1)在单晶硅衬底正面镀减反射膜以保护正表面的绒面结构；
(2)在单晶硅衬底背面镀减反射膜。
在本实施例中，步骤5)中的丝网印刷，包括如下工艺流程：
预烧结→印刷一层点印式烧穿型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料→烘干→印刷一层线型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料→烘干→烧结→印刷一层绝缘浆料→烘干→叠印一层绝缘浆料→烘干→主栅线银铝浆印刷一次。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内，本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (6)
1.一种基于光刻掩膜法制备N型FFE结构的I BC太阳能电池的方法，其特征在于，它包括如下步骤：
1)将单晶硅衬底经过去损伤层、清洗及制绒；
2)采用光刻掩膜工艺和磷扩散工艺在绒面上制作N+背场和钝化层，去除P+发射极上的光刻胶层及减薄PSG；
3)采用光刻掩膜工艺和硼扩散工艺在绒面上制作P+发射极和前表面发射极及钝化层，并刻蚀掉N+背场上的光刻胶层及减薄BSG；
4)采用PECVD分步沉积减反射层；
5)通过丝网印刷制作正电极及负电极，烧结后得到I BC太阳能电池。
2.如权利要求1所述的基于光刻掩膜法制备N型FFE结构的I BC太阳能电池的方法，其特征在于，步骤1)中的去损伤层，清洗及制绒，包括如下步骤：
(1)将单晶硅衬底浸入配有H2O2、NaOH的溶液中进行去损伤层清洗；
(2)进行织构化处理及金属离子清理。
3.如权利要求1所述的基于光刻掩膜法制备N型FFE结构的I BC太阳能电池的方法，其特征在于，步骤2)中的制作N+背场和钝化层，包括如下步骤：
(1)在单晶硅衬底背面P+区上沉积掩膜层，以在P+区形成掩膜；
(2)在三氯氧磷气氛中对单晶硅衬底背面进行扩散，形成N+背场和钝化层。
(3)在HF酸液中去除P+发射极上的光刻胶层，同时减薄PSG，以减少N+背场表面的多孔缺陷。
4.如权利要求1所述的基于光刻掩膜法制备N型FFE结构的I BC太阳能电池的方法，其特征在于，步骤3)中的制作P+发射极和前表面发射极及钝化层，包括如下步骤：
(1)在N+背场区沉积掩膜层，以保护N+区不被硼元素掺杂；
(2)在三溴化硼氛围下对单晶硅衬底进行双面扩散，以形成前发射极和P+发射极及钝化层；
(3)在HF酸液中去除N+背场上的光刻胶层并减薄BSG，减少P+发射极区的表面态密度以降低载流子的表面复合。
5.如权利要求1所述的基于光刻掩膜法制备N型FFE结构的I BC太阳能电池的方法，其特征在于，步骤4)中的沉积减反射层，它包括如下步骤：
(1)在单晶硅衬底正面镀减反射膜以保护正表面的绒面结构；
(2)在单晶硅衬底背面镀减反射膜。
6.如权利要求1所述的基于光刻掩膜法制备N型FFE结构的I BC太阳能电池的方法，其特征在于，步骤5)中的丝网印刷，包括如下工艺流程：
预烧结→印刷一层点印式烧穿型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料→烘干→印刷一层线型副栅线银、铝、铜、镀银铜、镀镍铜、镀锡铜或合金浆料→烘干→烧结→印刷一层绝缘浆料→烘干→叠印一层绝缘浆料→烘干→主栅线银铝浆印刷一次。
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