CN104157740B - 一种n型双面太阳能电池的制备方法 - Google Patents
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Abstract
本发明公开了一种N型双面太阳能电池的制备方法,包括如下步骤:(1) 清洗,制绒;(2) 在硅片正面印刷硼浆,烘干;(3) 在硅片背面印刷磷浆,烘干;(4) 将上述10~60个硅片面对面贴合在一起,使相贴面上的浆料相同,构成一硅片组;(5) 将硅片组放入扩散炉中,在900~950℃下处理30~50分钟;(6) 清洗硅片组的侧边氧化层;边缘刻蚀;(7) 酸洗;(8)沉积减反膜;(9)印刷电极,烧结。本发明利用印刷浆料的方法将多个硅片组成了硅片组,不仅避免了现有技术中的扩散阻挡膜的问题,简化了工艺步骤,而且在后续的清洗和刻蚀过程中可以直接对硅片组的侧边清洗和刻蚀,从而大大提高的产能,节约了成本。
Description
技术领域
本发明涉及一种N型双面太阳能电池的制备方法,属于太阳能电池技术领域。
背景技术
常规的化石燃料日益消耗殆尽,在现有的可持续能源中,太阳能无疑是一种最清洁、最普遍和最有潜力的替代能源。太阳能发电装置又称为太阳能电池或光伏电池,可以将太阳能直接转换成电能,其发电原理是基于半导体PN结的光生伏特效应。现有技术中,硅片的类型主要有P型硅片和N型硅片。其中,N型硅片由于其较高的少子寿命和基本无衰减的特点,因此可以用来制备更高转换效率的太阳电池,所以N型晶体硅太阳能电池成为目前太阳电池研发的热点。
目前,N型双面太阳能电池的制备方法主要包括如下步骤:1.表面制绒;2.正面扩散制结;3.热氧化,形成扩散阻挡膜;4.背面扩散制结;5.周边刻蚀;6.去除掺杂玻璃层;7.去除正面阻挡膜;8.镀膜(一般是双面沉积氮化硅);9.丝网印刷并烧结形成金属化接触电极。
然而,上述制备工艺中,在正面和背面扩散制结步骤中,为了避免正反面扩散的互相绕射影响,需要增加一层扩散阻挡膜层(阻挡膜通常采用热氧化形成SiO2氧化层,或PECVD形成SiNX膜)。然而,生长扩散阻挡膜的过程中同样会有绕射的问题,使得阻挡扩散的效果并不好;此外,扩散阻挡膜需要在后续步骤进行去除,这不仅增加了工艺步骤和难度,还增加了电池片的生产成本。
发明内容
本发明的发明目的是提供一种N型双面太阳能电池的制备方法。
为达到上述发明目的,本发明采用的技术方案是:一种N型双面太阳能电池的制备方法,包括如下步骤:
(1)清洗,制绒;
(2)在硅片正面印刷硼浆,然后烘干;
烘干温度为150~300℃,时间为5~15分钟;
(3)在硅片背面印刷磷浆,然后烘干;
烘干温度为150~300℃,时间为5~15分钟;
(4)将上述10~60个硅片面对面贴合在一起,使相贴面上的浆料相同,构成一硅片组;
(5)将上述硅片组放入扩散炉中,在900~950℃下处理30~50分钟;
(6)采用氢氟酸清洗上述硅片组的侧边氧化层;再采用四甲基氢氧化铵溶液对上述硅片组进行边缘刻蚀;
(7)将硅片组拆成一片片单独的硅片,然后进行酸洗,去除硅片表面的掺杂玻璃层;
(8)在硅片双面沉积减反膜;
(9)在硅片的背表面印刷铝电极,在前表面印刷银电极;将所述铝电极和银电极进行共烧结,以形成金属化接触。
上文中,所述步骤(4)中,是指将多个硅片面对面、背靠背的贴合在一起,构成硅片组,只要相互贴合的面上的浆料相同即可,如“磷-硼-硼-磷-磷-硼”这样,一片贴一片,同种浆料面贴在一起。
所述制绒是指通过化学反应使原本光亮的硅片表面(包括正面和背面)形成凸凹不平的结构以延长光在其表面的传播路径,从而提高太阳能电池片对光的吸收。
所述步骤(7)中的去除硅片表面的掺杂玻璃层,是指将硅片表面扩散时形成的掺杂玻璃层去除。
所述步骤(8)中的减反膜主要起减反射和钝化的作用,目前主要有氮化硅膜和氧化钛膜两类。
优选的,所述步骤(4)中,将25~50个硅片面对面贴合在一起,使相贴面上的浆料相同,构成一硅片组。
优选的,所述步骤(5)中,将上述硅片组放入扩散炉中,在935℃下处理45分钟。
上述技术方案中,所述步骤(6)中,采用体积浓度为5~10%的氢氟酸在室温下清洗上述硅片组的侧边氧化层,清洗时间为200~300秒;
再采用体积浓度为2~5%的四甲基氢氧化铵溶液在50~60℃下对上述硅片组进行边缘刻蚀,时间为50~200秒。
在清洗和刻蚀的过程中,由于硅片组内的硅片表面是相互紧贴的,因此酸洗液进不去,而硅片组侧边是暴漏在外面的,从而实现了直接对硅片组的侧边清洗和刻蚀,大大提高的产能,节约了成本。
由于上述技术方案运用,本发明与现有技术相比具有下列优点:
1、本发明开发了一种新的N型双面太阳能电池的制备方法,利用印刷浆料的方法将多个硅片组成了硅片组,不仅避免了现有技术中的扩散阻挡膜的问题,简化了工艺步骤,而且在后续的清洗和刻蚀过程中可以直接对硅片组的侧边清洗和刻蚀,从而大大提高的产能,节约了成本,取得了显著的效果;2、与现有工艺相比,本发明的制备方法不需要制备扩散阻挡膜,硅片紧贴放置可以增加批量扩散的片数,且可以批量地进行清洗刻蚀周边结,因而工艺得到了极大简化,大大提高了产能,节约了成本;
3、本发明的制备方法简单易行,成本较低,适于推广应用。
具体实施方式
下面结合实施例对本发明进一步描述。
实施例一:
一种N型双面太阳能电池的制备方法,包括如下步骤:
(1)清洗,制绒;
(2)在硅片正面印刷硼浆,然后烘干;
烘干温度为200℃,时间为10分钟;
(3)在硅片背面印刷磷浆,然后烘干;
烘干温度为200℃,时间为10分钟;
(4)将上述40个硅片面对面贴合在一起,使相贴面上的浆料相同,构成一硅片组;
(5)将上述硅片组放入扩散炉中,在935℃下处理45分钟;
(6)采用体积浓度为7%的氢氟酸在室温下清洗上述硅片组的侧边氧化层,清洗时间为250秒;
再采用体积浓度为3%的四甲基氢氧化铵溶液在60℃下对上述硅片组进行边缘刻蚀,时间为100秒。
(7)将硅片组拆成一片片单独的硅片,然后进行酸洗,去除硅片表面的掺杂玻璃层;
(8)在硅片双面沉积减反膜;
(9)在硅片的背表面印刷铝电极,在前表面印刷银电极;将所述铝电极和银电极进行共烧结,以形成金属化接触。
Claims (4)
1.一种N型双面太阳能电池的制备方法,其特征在于,包括如下步骤:
(1) 清洗,制绒;
(2) 在硅片正面印刷硼浆,然后烘干;
烘干温度为150~300℃,时间为5~15分钟;
(3) 在硅片背面印刷磷浆,然后烘干;
烘干温度为150~300℃,时间为5~15分钟;
(4) 将10~60个上述经过步骤(1)至(3)处理后的硅片面对面贴合在一起,使相贴面上的浆料相同,构成一硅片组;
(5) 将上述硅片组放入扩散炉中,在900~950℃下处理30~50分钟;
(6) 采用氢氟酸清洗上述硅片组的侧边氧化层;再采用四甲基氢氧化铵溶液对上述硅片组进行边缘刻蚀;
(7) 将硅片组拆成一片片单独的硅片,然后进行酸洗,去除硅片表面的掺杂玻璃层;
(8) 在硅片双面沉积减反膜;
(9) 在硅片的背表面印刷铝电极,在前表面印刷银电极;将所述铝电极和银电极进行共烧结,以形成金属化接触。
2.根据权利要求1所述的制备方法,其特征在于:所述步骤(4)中,将25~50个硅片面对面贴合在一起,使相贴面上的浆料相同,构成一硅片组。
3.根据权利要求1所述的制备方法,其特征在于:所述步骤(5)中,将上述硅片组放入扩散炉中,在935℃下处理45分钟。
4.根据权利要求1所述的制备方法,其特征在于:所述步骤(6)中,采用体积浓度为5~10%的氢氟酸在室温下清洗上述硅片组的侧边氧化层,清洗时间为200~300秒;
再采用体积浓度为2~5%的四甲基氢氧化铵溶液在50~60℃下对上述硅片组进行边缘刻蚀,时间为50~200秒。
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CN104538501A (zh) * | 2015-01-15 | 2015-04-22 | 中利腾晖光伏科技有限公司 | N型双面电池及其制作方法 |
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