CN101562204B - 太阳能电池 - Google Patents

太阳能电池 Download PDF

Info

Publication number
CN101562204B
CN101562204B CN2008100667503A CN200810066750A CN101562204B CN 101562204 B CN101562204 B CN 101562204B CN 2008100667503 A CN2008100667503 A CN 2008100667503A CN 200810066750 A CN200810066750 A CN 200810066750A CN 101562204 B CN101562204 B CN 101562204B
Authority
CN
China
Prior art keywords
carbon nano
solar cell
tube
carbon
tube structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008100667503A
Other languages
English (en)
Other versions
CN101562204A (zh
Inventor
孙海林
姜开利
李群庆
范守善
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CN2008100667503A priority Critical patent/CN101562204B/zh
Priority to US12/339,364 priority patent/US8895841B2/en
Priority to EP09153975.9A priority patent/EP2099075B1/en
Priority to JP2009098940A priority patent/JP5027185B2/ja
Publication of CN101562204A publication Critical patent/CN101562204A/zh
Application granted granted Critical
Publication of CN101562204B publication Critical patent/CN101562204B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery

Abstract

本发明涉及一种太阳能电池，该太阳能电池包括一背电极、一硅片衬底、一本征隧道层和一碳纳米管结构。所述硅片衬底包括相对设置的一第一表面和一第二表面。所述背电极设置于所述硅片衬底的第一表面，且与该硅片衬底的第一表面欧姆接触。所述本征隧道层设置于所述硅片衬底的第二表面，且与该硅片衬底的第二表面接触。所述碳纳米管结构设置于所述本征隧道层的表面，且与该本征隧道层的表面接触。

Description

太阳能电池 
技术领域
本发明涉及一种太阳能电池，尤其涉及一种基于碳纳米管的太阳能电池。 
背景技术
太阳能是当今最清洁的能源之一，取之不尽、用之不竭。太阳能的利用方式包括光能-热能转换、光能-电能转换和光能-化学能转换。太阳能电池是光能-电能转换的典型例子，是利用半导体材料的光生伏特原理制成的。根据半导体光电转换材料种类不同，太阳能电池可以分为硅基太阳能电池(请参见太阳能电池及多晶硅的生产，材料与冶金学报，张明杰等，vol6，p33-38(2007))、砷化镓太阳能电池、有机薄膜太阳能电池等。 
目前，太阳能电池以硅基太阳能电池为主。请参阅图1，现有技术中的太阳能电池30包括一背电极32、一硅片衬底34、一本征隧道层36、一掺杂硅层38和一上电极40。所述硅片衬底34包括相对设置的一第一表面341和一第二表面342。所述背电极32设置于所述硅片衬底34的第一表面341，且与该硅片衬底34的第一表面341欧姆接触。所述本征隧道层36设置于所述硅片衬底34的第二表面342，且与该硅片衬底34的第二表面342接触。所述掺杂硅层38设置于所述本征隧道层36的表面361，且与该本征隧道层36的表面361接触。所述上电极40设置于所述掺杂硅层38的表面381，且与该掺杂硅层38的表面381接触，用于收集流过所述掺杂硅层38的电流。 
所述太阳能电池30进一步包括至少一电极42，该至少一电极42设置于所述上电极40的表面401，并与该上电极40的表面401接触。所述至少一电极42的设置用于收集流过所述上电极40的电流。所述硅片衬底34用于产生大量的电子，所述掺杂硅层38用于产生大量的空穴。同时，所述硅片衬底34可将大量的电子导入所述背电极32中，所述掺杂硅层38可将大量的空穴导入所述上电极40中。所述本征隧道层36的设置可以降低所述电子-空穴对在所述硅片衬底34和所述掺杂硅层38接触面的复合速度，从而进一步提高所述太阳能电池30的光电转换效率。
然而，现有技术的太阳能电池30的本征隧道层36上为一双层结构，包含一上电极40和一起到光电转换作用的掺杂硅层38，结构复杂。现有技术一般采用导电金属网格作为上电极40，然而导电金属都是不透明的材料，降低了太阳光的透过率。为了进一步增加太阳光的透过率，故采用透明的铟锡氧化物层作为上电极40，但由于铟锡氧化物层的机械和化学耐用性不够好，导致了现有的太阳能电池的耐用性低。同时，由于所述掺杂硅层38本身的吸光性不是很好，故所述硅基太阳能电池30的光电转换效率不高。 
因此，确有必要提供一种太阳能电池，所得到的太阳能电池结构简单，且具有较高的光电转换效率、耐用性高、阻值分布均匀及透光性好。 
发明内容
一种太阳能电池包括一背电极、一硅片衬底、一本征隧道层和一碳纳米管结构。所述硅片衬底包括相对设置的第一表面和第二表面。所述背电极设置于所述硅片衬底的第一表面，且与该硅片衬底的第一表面欧姆接触。所述本征隧道层设置于所述硅片衬底的第二表面，且与该硅片衬底的第二表面接触。所述碳纳米管结构设置于所述本征隧道层的表面，且与该本征隧道层的表面接触，所述碳纳米管结构包括多个首尾相连且有序排列的碳纳米管。 
与现有技术相比较，所述太阳能电池具有以下优点：其一，碳纳米管结构具有良好的吸光性及导电性，故，在太阳能电池中起到光电转换及上电极的双重作用，且无需掺杂硅层，因此结构简单；其二，碳纳米管结构具有良好的吸收太阳光能力，所得到的太阳能电池具有较高的光电转换效率；其三，碳纳米管结构具有很好的韧性和机械强度，故，采用碳纳米管结构作上电极，可以相应的提高太阳能电池的耐用性；其四，由于碳纳米管结构具有较均匀的结构，故，采用碳纳米管结构作上电极，可使得上电极具有均匀的电阻，从而提高太阳能电池的性能；其五，碳纳米管结构中相邻的碳纳米管之间具有均匀分布的空隙，故，采用碳纳米管结构作上电极，可使得上电极对太阳光具有很好的透光性。 
附图说明
图1是现有技术中太阳能电池的结构示意图。 
图2是本技术方案实施例的太阳能电池的侧视结构示意图。 
图3是本技术方案实施例的太阳能电池的俯视结构示意图。 
图4是本技术方案实施例的太阳能电池的有序碳纳米管薄膜的部分放大示意图。 
具体实施方式
以下将结合附图详细说明本技术方案太阳能电池。 
请参阅图2，本技术方案实施例提供一种太阳能电池10包括一背电极12、一硅片衬底14、一本征隧道层16、一碳纳米管结构18和至少一电极20。所述硅片衬底14包括相对设置的一第一表面141和一第二表面142。所述背电极12设置于所述硅片衬底14的第一表面141，且与该硅片衬底14的第一表面141欧姆接触。所述本征隧道层16设置于所述硅片衬底14的表面142，且与该硅片衬底14的表面142接触。所述碳纳米管结构18包括相对设置的一第一表面181和一第二表面182。该碳纳米管结构18设置于所述本征隧道层16的表面161，且与该本征隧道层16的表面161接触。所述电极20设置于所述碳纳米管结构18的第一表面181。 
所述电极20是一可选择的结构。该电极20的材料为银、金或者碳纳米管等导电材料。所述电极20的形状和厚度不限，可设置于所述碳纳米管结构18的第一表面181或者第二表面182，并与碳纳米管结构18的第一表面181或者第二表面182接触。所述电极20的设置可用于收集流过所述碳纳米管结构18中的电流，并与外电路(图未示)连接。 
所述背电极12的材料可为铝、镁或者银等金属。所述背电极12的厚度为10微米～300微米。所述背电极12的形状和厚度不限。 
所述硅片衬底14可以是单晶硅片或者多晶硅片。该硅片衬底14的厚度为200微米～300微米。所述硅片衬底14用于产生大量的电子，并将电子导入所述背电极12中。 
所述本征隧道层16的材料为二氧化硅或者氮化硅。该本征隧道层16的厚度为1埃～30埃。当太阳光照射所述太阳能电池10时，可在所述硅片衬底14和碳纳米管结构18的接触面上产生大量的激子，即电子-空穴对。所述本 征隧道层16的设置可以降低所述电子-空穴对在所述硅片衬底14和所述碳纳米管结构16接触面的复合速度，从而进一步提高所述太阳能电池10的光电转换效率。 
所述碳纳米管结构18包括至少一碳纳米管层，该碳纳米管层包括一碳纳米管薄膜或者多个碳纳米管长线。所述碳纳米管薄膜包括多个有序排列的碳纳米管或者多个无序排列的碳纳米管。所述多个有序排列的碳纳米管，沿固定方向择优取向排列。所述碳纳米管长线包括多个首尾相连的碳纳米管束，该碳纳米管束包括多个长度相等且均匀分布的碳纳米管。该碳纳米管长线是由多个碳纳米管束组成的束状结构或者绞线结构。所述束状结构的碳纳米管长线中的碳纳米管沿碳纳米管长线的轴向择优取向排列。所述绞线结构的碳纳米管长线中的碳纳米管绕碳纳米管长线的轴向螺旋状旋转排列。所述多个碳纳米管长线交叉铺设形成一碳纳米管结构18。所述至少一碳纳米管薄膜和多个碳纳米管长线互相重叠形成的碳纳米管结构18。可以理解，碳纳米管粉末与金属混合形成的复合材料涂覆于所述本征隧道层16的表面161，形成一碳纳米管结构18等，只需具有良好的吸光性、导电性及耐用性等特性即可。 
所述碳纳米管结构18包括多个均匀分布的碳纳米管，以使所述太阳能电池10具有均匀的电阻。利用碳纳米管的导电性以及良好的吸收太阳光能力，所述太阳能电池10具有优异的导电性以及较高的光电转换效率。所述碳纳米管结构18在所述太阳能电池10中起到光电转换及导电的双重作用。 
所述碳纳米管结构18中的碳纳米管为单壁碳纳米管、双壁碳纳米管或者多壁碳纳米管。其中，多壁碳纳米管是金属性质的，单壁碳纳米管根据其手性和直径不同分为半导体和金属两种，双壁碳纳米管的属性是金属性质的。当所述碳纳米管结构18中的碳纳米管为单壁碳纳米管时，该单壁碳纳米管的直径为0.5纳米～50纳米。当所述碳纳米管结构18中的碳纳米管为双壁碳纳米管时，该双壁碳纳米管的直径为1.0纳米～50纳米。当所述碳纳米管结构18中的碳纳米管为多壁碳纳米管时，该多壁碳纳米管的直径为1.5纳米～50纳米。由于所述碳纳米管结构18中的碳纳米管非常纯净，且由于碳纳米管本身的比表面积非常大，所以该碳纳米管结构18本身具有较强的粘性。该碳纳米管结构18可利用其本身的粘性直接固定于所述本征隧道层16 的表面161。 
请参阅图3及图4，优选地，所述碳纳米管结构18包括一有序碳纳米管薄膜183。该有序碳纳米管薄膜183可通过直接拉伸一碳纳米管阵列获得。该有序碳纳米管薄膜183包括沿拉伸方向定向排列的碳纳米管。具体地，所述有序碳纳米管薄膜183包括多个首尾相连且长度相等的碳纳米管束184。所述碳纳米管束184的两端通过范德华力相互连接。每个碳纳米管束184包括多个长度相等且平行排列的碳纳米管185。所述相邻的碳纳米管185之间通过范德华力紧密结合。所述有序碳纳米管薄膜183是由碳纳米管阵列经进一步处理得到的，故其长度与宽度和碳纳米管阵列所生长的基底的尺寸有关。可根据实际需求制得。本实施例中，采用气相沉积法在4英寸的基底生长超顺排碳纳米管阵列。所述有序碳纳米管薄膜183的宽度可为0.01厘米～10厘米，厚度为10纳米～100微米。所述有序碳纳米管薄膜183中，多个碳纳米管均匀分布且平行于所述碳纳米管结构18的表面。所述的多个碳纳米管沿拉伸方向择优取向排列。 
可以理解，所述碳纳米管结构18还可包括至少两个重叠设置的有序碳纳米管薄膜183。具体地，相邻的两个有序碳纳米管薄膜183中的碳纳米管具有一交叉角度α，且0度≤α≤90度，具体可依据实际需求制备。可以理解，由于碳纳米管结构18中的多个有序碳纳米管薄膜183可重叠设置，故，上述碳纳米管结构18的厚度不限，可根据实际需要制成具有任意厚度的碳纳米管结构18。所述碳纳米管结构18中，多个碳纳米管均匀分布且平行于所述碳纳米管结构18的表面。所述的多个碳纳米管沿固定方向择优取向排列。 
所述太阳能电池10在应用时，太阳光照射到所述碳纳米管结构18，该碳纳米管结构18用于产生大量的空穴载流子，所述单晶硅衬底14用于产生大量的电子载流子。大量的电子-空穴载流子会在所述硅片衬底14和碳纳米管结构18的接触面上复合。所述本征隧道层16的设置可以降低电子和空穴在所述单晶硅衬底14和所述碳纳米管结构18接触面的复合速度，从而进一步提高所述太阳能电池10的光电转换效率。其中，电子载流子通过所述硅片衬底14向背电极12传输，而由所述背电极12收集。空穴载流子通过所述碳纳米管结构18的传输、收集。进一步，通过碳纳米管结构18所收集的电流被所述至少一电极20再次收集，这样外电路就有电流通过。 
所述太阳能电池10具有以下优点：其一，碳纳米管结构18具有良好的吸光性及导电性，故，在太阳能电池10中起到光电转换及上电极的双重作用，且无需掺杂硅层，因此结构简单；其二，碳纳米管结构18具有良好的吸收太阳光能力，所得到的太阳能电池10具有较高的光电转换效率；其三，碳纳米管结构18具有很好的韧性和机械强度，故，采用碳纳米管结构18作上电极，可以相应的提高太阳能电池的耐用性；其四，由于碳纳米管结构18具有较均匀的结构，故，采用碳纳米管结构18作上电极，可使得上电极具有均匀的电阻，从而提高太阳能电池10的性能；其五，碳纳米管结构18中相邻的碳纳米管之间具有均匀分布的空隙，故，采用碳纳米管结构18作上电极，可使得上电极对太阳光具有很好的透光性。 
另外，本领域技术人员还可在本发明精神内做其他变化，当然，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。 

Claims (18)

1.一种太阳能电池，其包括依次设置的一背电极、一硅片衬底及一本征隧道层，其特征在于，所述太阳能电池进一步包括一碳纳米管结构设置于上述本征隧道层的表面，上述本征隧道层设置于所述硅片衬底和碳纳米管结构之间，所述碳纳米管结构包括多个首尾相连且有序排列的碳纳米管。
2.如权利要求1所述的太阳能电池，其特征在于，所述碳纳米管结构包括多个均匀分布的碳纳米管。
3.如权利要求2所述的太阳能电池，其特征在于，所述碳纳米管为单壁碳纳米管、双壁碳纳米管或者多壁碳纳米管。
4.如权利要求1所述的太阳能电池，其特征在于，所述碳纳米管结构包括至少一碳纳米管层，该碳纳米管层包括一碳纳米管薄膜或者多个碳纳米管长线。
5.如权利要求4所述的太阳能电池，其特征在于，所述碳纳米管结构包括至少两个重叠设置的碳纳米管薄膜。
6.如权利要求4所述的太阳能电池，其特征在于，所述碳纳米管结构包括多个交叉铺设的碳纳米管长线。
7.如权利要求4所述的太阳能电池，其特征在于，所述碳纳米管结构包括至少一碳纳米管薄膜和多个碳纳米管长线互相重叠的复合结构。
8.如权利要求4所述的太阳能电池，其特征在于，所述碳纳米管薄膜包括多个有序排列的碳纳米管。
9.如权利要求8所述的太阳能电池，其特征在于，所述多个有序排列的碳纳米管沿固定方向择优取向排列。
10.如权利要求9所述的太阳能电池，其特征在于，所述碳纳米管薄膜包括多个首尾相连且长度相等的碳纳米管束，该碳纳米管束的两端通过范德华力相互连接，每个碳纳米管束包括多个长度相等且平行排列的碳纳米管。
11.如权利要求4所述的太阳能电池，其特征在于，所述碳纳米管长线包括多个首尾相连的碳纳米管束，该碳纳米管束包括多个长度相等且均匀分布的碳纳米管。
12.如权利要求11所述的太阳能电池，其特征在于，所述碳纳米管长线是由多个碳纳米管束组成的束状结构或者绞线结构。
13.如权利要求12所述的太阳能电池，其特征在于，所述束状结构的碳纳米管长线中的碳纳米管沿碳纳米管长线的轴向择优取向排列。
14.如权利要求12所述的太阳能电池，其特征在于，所述绞线结构的碳纳米管长线中的碳纳米管绕碳纳米管长线的轴向螺旋状旋转排列。
15.如权利要求1所述的太阳能电池，其特征在于，所述硅片衬底为单晶硅片或者多晶硅片，该硅片衬底的厚度为200微米～300微米。
16.如权利要求1所述的太阳能电池，其特征在于，所述背电极的材料为铝、镁或者银，该背电极的厚度为10微米～300微米。
17.如权利要求1所述的太阳能电池，其特征在于，所述本征隧道层的材料为二氧化硅或者氮化硅，厚度为1埃～30埃。
18.如权利要求1所述的太阳能电池，其特征在于，该太阳能电池进一步包括至少一电极，该电极设置于所述碳纳米管结构的表面，并与该碳纳米管结构电接触。
CN2008100667503A 2008-03-07 2008-04-18 太阳能电池 Active CN101562204B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008100667503A CN101562204B (zh) 2008-04-18 2008-04-18 太阳能电池
US12/339,364 US8895841B2 (en) 2008-04-18 2008-12-19 Carbon nanotube based silicon photovoltaic device
EP09153975.9A EP2099075B1 (en) 2008-03-07 2009-02-27 Photovoltaic device
JP2009098940A JP5027185B2 (ja) 2008-04-18 2009-04-15 太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008100667503A CN101562204B (zh) 2008-04-18 2008-04-18 太阳能电池

Publications (2)

Publication Number Publication Date
CN101562204A CN101562204A (zh) 2009-10-21
CN101562204B true CN101562204B (zh) 2011-03-23

Family

ID=41200093

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100667503A Active CN101562204B (zh) 2008-03-07 2008-04-18 太阳能电池

Country Status (3)

Country Link
US (1) US8895841B2 (zh)
JP (1) JP5027185B2 (zh)
CN (1) CN101562204B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101880035A (zh) 2010-06-29 2010-11-10 清华大学 碳纳米管结构
CN104269447B (zh) * 2014-09-19 2016-06-22 无锡赛晶太阳能有限公司 一种多晶硅太阳能电池板
US11374133B2 (en) * 2015-06-17 2022-06-28 Unm Rainforest Innovations Metal matrix composites for contacts on solar cells

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289270A (ja) * 2001-03-23 2002-10-04 Japan Science & Technology Corp グレッチェル型太陽電池とその製造方法
CN1996620A (zh) * 2006-12-29 2007-07-11 清华大学 基于碳纳米管薄膜的太阳能电池及其制备方法
KR100783766B1 (ko) * 2006-07-21 2007-12-07 한국전기연구원 탄소나노튜브 전극 및 그 제조방법 그리고 이에 의한염료감응형 태양전지
CN101132028A (zh) * 2006-08-25 2008-02-27 通用电气公司 单个共形结纳米线光伏器件

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57130483A (en) 1981-02-05 1982-08-12 Semiconductor Energy Lab Co Ltd Mis type photoelectric transducer
JPS5923570A (ja) 1982-07-30 1984-02-07 Hitachi Ltd 太陽電池
JPH0795602B2 (ja) * 1989-12-01 1995-10-11 三菱電機株式会社 太陽電池及びその製造方法
JPH0521821A (ja) 1991-07-16 1993-01-29 Sharp Corp 光電変換装置
JPH05243594A (ja) 1992-03-02 1993-09-21 Sumitomo Electric Ind Ltd 太陽電池
JPH05335614A (ja) 1992-06-03 1993-12-17 Idemitsu Kosan Co Ltd 光電変換素子
JPH0677511A (ja) 1992-08-27 1994-03-18 Matsushita Electric Ind Co Ltd 太陽電池及びその製造方法
JPH11103080A (ja) 1997-09-26 1999-04-13 Aisin Seiki Co Ltd 太陽電池
EP1099256A2 (en) 1998-07-02 2001-05-16 Astropower Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
DE69831860T2 (de) 1998-07-04 2006-07-20 Au Optronics Corp. Elektrode zur verwendung in elektrooptischen bauelementen
KR100862131B1 (ko) 2000-08-22 2008-10-09 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 반도체 나노와이어 제조 방법
NL1016779C2 (nl) 2000-12-02 2002-06-04 Cornelis Johannes Maria V Rijn Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs.
WO2002052654A1 (fr) 2000-12-26 2002-07-04 Kabushiki Kaisha Hayashibara Seibutsu Kagaku Kenkyujo Cellule solaire
KR20030085523A (ko) 2001-03-19 2003-11-05 신에쯔 한도타이 가부시키가이샤 태양전지 및 그 제조방법
JP2003179241A (ja) 2001-12-10 2003-06-27 Kyocera Corp 薄膜太陽電池
JP2003209270A (ja) 2002-01-15 2003-07-25 Toyota Central Res & Dev Lab Inc 炭素系光電素子およびその製造方法
US7522040B2 (en) 2004-04-20 2009-04-21 Nanomix, Inc. Remotely communicating, battery-powered nanostructure sensor devices
JP4170701B2 (ja) 2002-07-31 2008-10-22 信越半導体株式会社 太陽電池及びその製造方法
WO2004068548A2 (en) 2003-01-21 2004-08-12 Rensselaer Polytechnic Institute Three dimensional radiation conversion semiconductor devices
JP4162516B2 (ja) 2003-03-14 2008-10-08 三洋電機株式会社 光起電力装置
US7605327B2 (en) 2003-05-21 2009-10-20 Nanosolar, Inc. Photovoltaic devices fabricated from nanostructured template
JP2005050669A (ja) 2003-07-28 2005-02-24 Tdk Corp 電極、及び、それを用いた電気化学素子
TWI241029B (en) 2003-12-05 2005-10-01 Hon Hai Prec Ind Co Ltd Dye sensitized solar cell electrode and solar cell having same
US20050268963A1 (en) 2004-02-24 2005-12-08 David Jordan Process for manufacturing photovoltaic cells
JP2005327965A (ja) 2004-05-17 2005-11-24 Shachihata Inc 光起電力装置
US8075863B2 (en) 2004-05-26 2011-12-13 Massachusetts Institute Of Technology Methods and devices for growth and/or assembly of nanostructures
WO2006085940A2 (en) * 2004-06-18 2006-08-17 Ultradots, Inc. Nanostructured materials and photovoltaic devices including nanostructured materials
US8080487B2 (en) 2004-09-20 2011-12-20 Lockheed Martin Corporation Ballistic fabrics with improved antiballistic properties
US20070240757A1 (en) * 2004-10-15 2007-10-18 The Trustees Of Boston College Solar cells using arrays of optical rectennas
WO2007015710A2 (en) 2004-11-09 2007-02-08 Board Of Regents, The University Of Texas System The fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns
JP2006171336A (ja) 2004-12-15 2006-06-29 Takiron Co Ltd 画像表示用透明電極体および画像表示装置
US20070153362A1 (en) 2004-12-27 2007-07-05 Regents Of The University Of California Fabric having nanostructured thin-film networks
JP2006210780A (ja) 2005-01-31 2006-08-10 Kyocera Chemical Corp 多層型光電変換装置
TWI251354B (en) 2005-02-02 2006-03-11 Ind Tech Res Inst Solar energy power module with carbon nano-tube
JP4481869B2 (ja) 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
CN100539206C (zh) 2005-09-23 2009-09-09 中芯国际集成电路制造(上海)有限公司 可以充分吸收更广泛波长太阳光的太阳能电池结构
JP5242009B2 (ja) 2005-09-29 2013-07-24 国立大学法人名古屋大学 カーボンナノウォールを用いた光起電力素子
WO2007037343A1 (ja) 2005-09-29 2007-04-05 Nu Eco Engineering Co., Ltd. カーボンナノ構造体を用いたダイオード及び光起電力素子
JP4720426B2 (ja) 2005-10-19 2011-07-13 住友金属鉱山株式会社 カーボンナノチューブを用いた太陽電池
JP2007126338A (ja) 2005-11-07 2007-05-24 Ulvac Japan Ltd カーボンナノ材料及びその作製方法、並びに金属微粒子担持カーボンナノ材料及びその作製方法
US20070119496A1 (en) 2005-11-30 2007-05-31 Massachusetts Institute Of Technology Photovoltaic cell
CN100462301C (zh) 2005-12-09 2009-02-18 清华大学 一种碳纳米管阵列的制备方法
CN100500556C (zh) 2005-12-16 2009-06-17 清华大学 碳纳米管丝及其制作方法
JP2009531837A (ja) 2006-03-23 2009-09-03 ソレクサント・コーポレイション ナノ粒子により増感させたカーボンナノチューブを含む光起電装置
US7737357B2 (en) 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
KR20070113763A (ko) 2006-05-26 2007-11-29 삼성전자주식회사 탄소나노튜브 패턴 형성방법 및 그에 의해 수득된탄소나노튜브 패턴
US20070277874A1 (en) 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
CN101086939B (zh) 2006-06-09 2010-05-12 清华大学 场发射元件及其制备方法
TWI320026B (en) 2006-06-30 2010-02-01 Field emission componet and method for making same
KR100813243B1 (ko) 2006-07-04 2008-03-13 삼성에스디아이 주식회사 탄소나노튜브를 이용한 반도체 소자의 층간 배선 및 그제조 방법
CN100530744C (zh) 2006-07-06 2009-08-19 西安交通大学 一种有机太阳电池的结构及其该结构制备的有机太阳电池
JP2009117463A (ja) 2007-11-02 2009-05-28 Kaneka Corp 薄膜光電変換装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289270A (ja) * 2001-03-23 2002-10-04 Japan Science & Technology Corp グレッチェル型太陽電池とその製造方法
KR100783766B1 (ko) * 2006-07-21 2007-12-07 한국전기연구원 탄소나노튜브 전극 및 그 제조방법 그리고 이에 의한염료감응형 태양전지
CN101132028A (zh) * 2006-08-25 2008-02-27 通用电气公司 单个共形结纳米线光伏器件
CN1996620A (zh) * 2006-12-29 2007-07-11 清华大学 基于碳纳米管薄膜的太阳能电池及其制备方法

Also Published As

Publication number Publication date
US20090260688A1 (en) 2009-10-22
JP5027185B2 (ja) 2012-09-19
US8895841B2 (en) 2014-11-25
JP2009260356A (ja) 2009-11-05
CN101562204A (zh) 2009-10-21

Similar Documents

Publication Publication Date Title
CN101527327B (zh) 太阳能电池
CN101552296B (zh) 太阳能电池
US8524525B2 (en) Joined nanostructures and methods therefor
Liu et al. Solid-state, polymer-based fiber solar cells with carbon nanotube electrodes
CN101552295A (zh) 太阳能电池
CN101562203B (zh) 太阳能电池
Jia et al. Carbon nanotube films by filtration for nanotube-silicon heterojunction solar cells
CN104868045B (zh) 光电转换器件及其应用
US20170229668A1 (en) Transparent electrode materials and methods for forming same
Wang et al. Structure–property relationship of assembled nanowire materials
CN101527328B (zh) 太阳能电池及其制造方法
CN101562204B (zh) 太阳能电池
CN101552297B (zh) 太阳能电池
Jia et al. Strong, conductive carbon nanotube fibers as efficient hole collectors
Woo Choi et al. Optimization of antireflective zinc oxide nanorod arrays on seedless substrate for bulk-heterojunction organic solar cells
TWI450402B (zh) 太陽能電池
CN100499178C (zh) 基于一维纳米材料的光电转换器件
TWI459568B (zh) 太陽能電池
TWI409961B (zh) 太陽能電池
CN103681907B (zh) 光伏纳米发电机及其制造方法
CN110690846B (zh) 一种基于倾斜硅纳米线的光热电转换器件
TW200939491A (en) Solar cell and method for making same
Lv et al. Carbon Nanotube and Graphene Fibers for Wearable Fiber-Shaped Energy Conversion
TW200947721A (en) Solar cell
TWI356502B (en) Solar cell

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CI01 Publication of corrected invention patent application

Correction item: Patentee|Address|Co-patentee

Correct: Tsinghua University| 100084. Haidian District 1, Tsinghua Yuan, Beijing, Tsinghua University, Room 401, research center of Tsinghua Foxconn nanometer science and technology|Hung Fujin Precision Industrial (Shenzhen) Co., Ltd.

False: Hongfujin Precision Industry (Shenzhen) Co., Ltd.|518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two

Number: 12

Volume: 27

CI03 Correction of invention patent

Correction item: Patentee|Address|Co-patentee

Correct: Tsinghua University| 100084. Haidian District 1, Tsinghua Yuan, Beijing, Tsinghua University, Room 401, research center of Tsinghua Foxconn nanometer science and technology|Hung Fujin Precision Industrial (Shenzhen) Co., Ltd.

False: Hongfujin Precision Industry (Shenzhen) Co., Ltd.|518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two

Number: 12

Page: The title page

Volume: 27

ERR Gazette correction

Free format text: CORRECT: PATENTEE; ADDRESS; CO-PATENTEE; FROM: HONGFUJIN PRECISION INDUSTRY (SHENZHEN) CO., LTD.;518109 NO. 2, EAST RING 2ND ROAD, YOUSONG 10TH INDUSTRIAL ZONE, LONGHUA TOWN, BAOAN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE TO: TSINGHUA UNIVERSITY;100084 ROOM 401, TSINGHUA-FOXCONN NANOTECHNOLOGY RESEARCH CENTER, TSINGHUA UNIVERSITY, NO. 1, TSINGHUA PARK, HAIDIAN DISTRICT, BEIJING; HONGFUJIN PRECISION INDUSTRY (SHENZHEN) CO., LTD.